Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700816
Xiaohui Liu, Jie Zhou, Zhixian Deng, Xun Luo
In this paper, a compact wideband Marchand balun with the amplitude and phase compensation is presented. The proposed three-layer balun consists of two sections using folded slot-coupled microstrip lines on the top and bottom metal-layers. To improve the in-band amplitude- and phase-balances, a ground-shield is introduced to embed in the central ground patch on the middle metal-layer. Based on the structures mentioned above, a wideband balun operating from 2.28 to 5.41 GHz is implemented and fabricated. The measurement exhibits the in-band amplitude-and phase-imbalances of ±0.42 dB and ±1.81°, respectively. Moreover, the core circuit-size of the balun is about 0.22 λg × 0.22 λg, where λg is the microstrip guided wavelength at the center frequency of 3.845 GHz.
{"title":"Compact Wideband Marchand Balun with Amplitude and Phase Compensation Shield","authors":"Xiaohui Liu, Jie Zhou, Zhixian Deng, Xun Luo","doi":"10.1109/mwsym.2019.8700816","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700816","url":null,"abstract":"In this paper, a compact wideband Marchand balun with the amplitude and phase compensation is presented. The proposed three-layer balun consists of two sections using folded slot-coupled microstrip lines on the top and bottom metal-layers. To improve the in-band amplitude- and phase-balances, a ground-shield is introduced to embed in the central ground patch on the middle metal-layer. Based on the structures mentioned above, a wideband balun operating from 2.28 to 5.41 GHz is implemented and fabricated. The measurement exhibits the in-band amplitude-and phase-imbalances of ±0.42 dB and ±1.81°, respectively. Moreover, the core circuit-size of the balun is about 0.22 λg × 0.22 λg, where λg is the microstrip guided wavelength at the center frequency of 3.845 GHz.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"42 1","pages":"448-451"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88911490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700977
V. Issakov, R. Ciocoveanu, R. Weigel, A. Geiselbrechtinger, J. Rimmelspacher
We present a highly-integrated low-power 60 GHz multi-channel transceiver realized in a 28 nm bulk CMOS technology. The circuit integrates three receive (RX) and two transmit (TX) channels. A receive channel includes an LNA, a passive mixer and a transimpedance amplifier (TIA), while a transmit channel contains a three-stage transformer-coupled differential power amplifier (PA). Additionally, the transceiver integrates a local oscillator (LO) signal generation network comprising a voltage-controlled oscillator (VCO), LO buffers, power splitters, frequency divider and a passive distribution network. The VCO is realized as a push-push cross-coupled topology and is continuously tunable in the frequency range 57-to-72 GHz, while achieving a measured phase noise of −84 dBc/Hz at 1 MHz offset at 60 GHz. The entire transceiver dissipates 342 mW using a single 0.9 V supply. A single RX channel draws 33 mA, while a single TX consumes 43 mA. The circuit including pads occupies a chip area of only 1.9 mm × 2.5 mm, which is limited only by the separation necessary for isolation between the channels. The transceiver provides a competitive performance and is suitable for 60 GHz continuous-wave radar applications.
{"title":"Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS","authors":"V. Issakov, R. Ciocoveanu, R. Weigel, A. Geiselbrechtinger, J. Rimmelspacher","doi":"10.1109/mwsym.2019.8700977","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700977","url":null,"abstract":"We present a highly-integrated low-power 60 GHz multi-channel transceiver realized in a 28 nm bulk CMOS technology. The circuit integrates three receive (RX) and two transmit (TX) channels. A receive channel includes an LNA, a passive mixer and a transimpedance amplifier (TIA), while a transmit channel contains a three-stage transformer-coupled differential power amplifier (PA). Additionally, the transceiver integrates a local oscillator (LO) signal generation network comprising a voltage-controlled oscillator (VCO), LO buffers, power splitters, frequency divider and a passive distribution network. The VCO is realized as a push-push cross-coupled topology and is continuously tunable in the frequency range 57-to-72 GHz, while achieving a measured phase noise of −84 dBc/Hz at 1 MHz offset at 60 GHz. The entire transceiver dissipates 342 mW using a single 0.9 V supply. A single RX channel draws 33 mA, while a single TX consumes 43 mA. The circuit including pads occupies a chip area of only 1.9 mm × 2.5 mm, which is limited only by the separation necessary for isolation between the channels. The transceiver provides a competitive performance and is suitable for 60 GHz continuous-wave radar applications.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"10 1","pages":"650-653"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89639418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700822
M. Fahmi, J. Ruiz‐Cruz, R. Mansour
A novel compact wide-band contra-directional single conductor ridge waveguide coupler is presented. It exhibits 50% fractional bandwidth with equal power split between the through and coupled ports while occupying a very compact volume. The design can be exploited in versatile applications, such as beam forming, or high-power combiners. The methodology to design the coupler is presented. It starts with designing the coupling section in a modified double ridge waveguide that supports two independent propagating TE modes. Proper choice of the cross section allows the designer to achieve the required impedance levels for tight coupling values, not common for standard waveguide contra-directional couplers. An S-band proof of concept prototype was synthesized, simulated, fabricated and tested demonstrating excellent measured results without any tuning.
{"title":"Contra-Directional 3dB 90° Hybrid Coupler in Ridge Waveguides Using Even and Odd TE Modes","authors":"M. Fahmi, J. Ruiz‐Cruz, R. Mansour","doi":"10.1109/mwsym.2019.8700822","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700822","url":null,"abstract":"A novel compact wide-band contra-directional single conductor ridge waveguide coupler is presented. It exhibits 50% fractional bandwidth with equal power split between the through and coupled ports while occupying a very compact volume. The design can be exploited in versatile applications, such as beam forming, or high-power combiners. The methodology to design the coupler is presented. It starts with designing the coupling section in a modified double ridge waveguide that supports two independent propagating TE modes. Proper choice of the cross section allows the designer to achieve the required impedance levels for tight coupling values, not common for standard waveguide contra-directional couplers. An S-band proof of concept prototype was synthesized, simulated, fabricated and tested demonstrating excellent measured results without any tuning.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"13 1","pages":"584-586"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76003779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700734
Veenu Kamra, A. Dreher
The aim of this paper is to present the extension of the discrete mode matching (DMM) method to analyze multilayered microwave structures with inhomogeneous dielectric layers. The structures with lossy and/or anisotropic (both electric and magnetic) material are taken into consideration. The procedure involves the use of a full-wave equivalent circuit to obtain the system equation. The mathematical formulation is presented, and its application is demonstrated by analyzing various waveguide structures. The validation has been done with open literature and good agreement has been observed between the results.
{"title":"Analysis of Anisotropic Inhomogeneous Dielectric Waveguides With Discrete Mode Matching Method","authors":"Veenu Kamra, A. Dreher","doi":"10.1109/mwsym.2019.8700734","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700734","url":null,"abstract":"The aim of this paper is to present the extension of the discrete mode matching (DMM) method to analyze multilayered microwave structures with inhomogeneous dielectric layers. The structures with lossy and/or anisotropic (both electric and magnetic) material are taken into consideration. The procedure involves the use of a full-wave equivalent circuit to obtain the system equation. The mathematical formulation is presented, and its application is demonstrated by analyzing various waveguide structures. The validation has been done with open literature and good agreement has been observed between the results.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"24-27"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76084251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700754
B. Schoch, A. Tessmann, A. Leuther, S. Wagner, I. Kallfass
This paper presents a broadband H-band (220 -325 GHz) power amplifier in a 35 nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a submillimeter-wave monolithic integrated circuit (S-MMIC) and is designed to drive a high power amplifier in a multi-gigabit communication system. The five-stage amplifier S-MMIC based on common-source gain cells was realized and measured on-wafer with a maximum gain of 23 dB at 285 GHz. The lower and higher cutoff frequency is 278 and 335 GHz, respectively, with a gain variation of around 4 dB. The amplifier has four parallel transistors in the last two stages and provides a saturated output power of 8 dBm at 300 GHz. A gain-bandwidth product (GBW) of 508 GHz could be achieved.
{"title":"300 GHz broadband power amplifier with 508 GHz gain-bandwidth product and 8 dBm output power","authors":"B. Schoch, A. Tessmann, A. Leuther, S. Wagner, I. Kallfass","doi":"10.1109/mwsym.2019.8700754","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700754","url":null,"abstract":"This paper presents a broadband H-band (220 -325 GHz) power amplifier in a 35 nm InGaAs-based metamorphic high electron mobility transistor technology. The amplifier is realized as a submillimeter-wave monolithic integrated circuit (S-MMIC) and is designed to drive a high power amplifier in a multi-gigabit communication system. The five-stage amplifier S-MMIC based on common-source gain cells was realized and measured on-wafer with a maximum gain of 23 dB at 285 GHz. The lower and higher cutoff frequency is 278 and 335 GHz, respectively, with a gain variation of around 4 dB. The amplifier has four parallel transistors in the last two stages and provides a saturated output power of 8 dBm at 300 GHz. A gain-bandwidth product (GBW) of 508 GHz could be achieved.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"88 1","pages":"1249-1252"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76398934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700824
Zhijian Hao, Mingyo Park, D. Kim, A. Clark, R. Dargis, Haoshen Zhu, A. Ansari
Surface acoustic wave (SAW) resonators based on single crystalline aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) grown by molecular beam epitaxy (MBE) demonstrated substantial improvement in acoustic performance compared to the state-of-art devices with sputtered piezoelectric layers on silicon substrates. High coupling coefficient $left( {k_t^2} right)$ up to 5.0% and 7.8% were found in resonators with AlN and ScAlN device layers, respectively, due to better crystallinity and scandium doping. This resulted in high figure of merits $left( {Q times k_t^2} right)$ among SAW devices on silicon up to 5.4, which is about twice larger than the previous work using sputtered ScAlN on silicon and comparable to those on non-silicon substrates.
基于分子束外延(MBE)生长的单晶氮化铝(AlN)和氮化铝钪(ScAlN)的表面声波(SAW)谐振器与现有的基于硅衬底溅射压电层的表面声波谐振器相比，声学性能有了很大的提高。在AlN和ScAlN器件层的谐振腔中，由于更好的结晶度和钪掺杂，耦合系数$左({k_t^2} 右)$分别高达5.0%和7.8%。这导致硅上SAW器件的优点$左({Q times k_t^2} 右)$高达5.4，这比以前在硅上使用溅射ScAlN的工作大了大约两倍，与在非硅衬底上的工作相当。
{"title":"Single Crystalline ScAlN Surface Acoustic Wave Resonators with Large Figure of Merit (Q × kₜ²)","authors":"Zhijian Hao, Mingyo Park, D. Kim, A. Clark, R. Dargis, Haoshen Zhu, A. Ansari","doi":"10.1109/mwsym.2019.8700824","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700824","url":null,"abstract":"Surface acoustic wave (SAW) resonators based on single crystalline aluminum nitride (AlN) and scandium aluminum nitride (ScAlN) grown by molecular beam epitaxy (MBE) demonstrated substantial improvement in acoustic performance compared to the state-of-art devices with sputtered piezoelectric layers on silicon substrates. High coupling coefficient $left( {k_t^2} right)$ up to 5.0% and 7.8% were found in resonators with AlN and ScAlN device layers, respectively, due to better crystallinity and scandium doping. This resulted in high figure of merits $left( {Q times k_t^2} right)$ among SAW devices on silicon up to 5.4, which is about twice larger than the previous work using sputtered ScAlN on silicon and comparable to those on non-silicon substrates.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"16 1","pages":"786-789"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87893456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/MWSYM.2019.8701028
B. Jamroz, Dylan F. Williams, J. Rezac, M. Frey, A. Koepke
Uncertainty analysis of microwave electronic measurements enables the quantification of device performance and aides in the development of robust technology. The Monte Carlo method is commonly used to attain accurate uncertainty analyses for complicated nonlinear systems. Combining multiple similar measurements, each with a Monte Carlo uncertainty analysis, allows one to incorporate the uncertainty given by their spread. In this paper, we compare two Monte Carlo sampling methods, illustrate that one method reduces the bias of averaged quantities, show how this impacts computed uncertainties, and highlight microwave applications for which this corrected method can be applied.
{"title":"Accurate Monte Carlo Uncertainty Analysis for Multiple Measurements of Microwave Systems","authors":"B. Jamroz, Dylan F. Williams, J. Rezac, M. Frey, A. Koepke","doi":"10.1109/MWSYM.2019.8701028","DOIUrl":"https://doi.org/10.1109/MWSYM.2019.8701028","url":null,"abstract":"Uncertainty analysis of microwave electronic measurements enables the quantification of device performance and aides in the development of robust technology. The Monte Carlo method is commonly used to attain accurate uncertainty analyses for complicated nonlinear systems. Combining multiple similar measurements, each with a Monte Carlo uncertainty analysis, allows one to incorporate the uncertainty given by their spread. In this paper, we compare two Monte Carlo sampling methods, illustrate that one method reduces the bias of averaged quantities, show how this impacts computed uncertainties, and highlight microwave applications for which this corrected method can be applied.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"7 1","pages":"1279-1282"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76285554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700788
A. Sadeghfam, Alireza Sadeghi-Ahangar, A. Elgamal, H. Heuermann
This paper presents the design, development and experimental results of a novel, self-igniting compact and straightforward microwave plasma jet for industrial applications. Based on field simulations and supported by plasma RF equivalent circuits derived from measurements of the plasma during operation, a multi-staged matching network is developed to achieve the well matched microwave plasma jet presented. The 2.45 GHz microwave plasma torch with a waveguide input port operates is an atmospheric plasma with 2 kW and is well suited for various industrial applications by using air only. The energy conversion from the waveguide port to the plasma torch is approximately 90%. This not only enhances present plasma applications in e.g. surface treatment by offering higher power capabilities, activation rates and production speed, but also enables new applications such as cutting, rapid heating, and welding.
{"title":"Design and Development of a Novel Self-Igniting Microwave Plasma Jet for Industrial Applications","authors":"A. Sadeghfam, Alireza Sadeghi-Ahangar, A. Elgamal, H. Heuermann","doi":"10.1109/mwsym.2019.8700788","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700788","url":null,"abstract":"This paper presents the design, development and experimental results of a novel, self-igniting compact and straightforward microwave plasma jet for industrial applications. Based on field simulations and supported by plasma RF equivalent circuits derived from measurements of the plasma during operation, a multi-staged matching network is developed to achieve the well matched microwave plasma jet presented. The 2.45 GHz microwave plasma torch with a waveguide input port operates is an atmospheric plasma with 2 kW and is well suited for various industrial applications by using air only. The energy conversion from the waveguide port to the plasma torch is approximately 90%. This not only enhances present plasma applications in e.g. surface treatment by offering higher power capabilities, activation rates and production speed, but also enables new applications such as cutting, rapid heating, and welding.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"57 1","pages":"63-66"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79167562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700936
G. B., R. Mansour
This paper presents a novel high Q tunable coaxial filter, which maintains a constant absolute bandwidth and a constant Q over the tuning range. The key feature of the proposed filter configuration is that it is tuned by a single rotational mechanism irrespective of the filter order. The filter is capable to achieve a tuning range of 30% with a very minimum variations in bandwidth and insertion loss. A prototype 4-pole filter is developed at 2.5 GHz with a fractional bandwidth of 4% to verify the concept. The measured tuning range of the filter is 20% with insertion loss better than 0.4 dB over the entire tuning range. The measured bandwidth variation is within ±10% and insertion loss variation is within 0.05 dB over the tuning range. The concept is easily expandable to filters with higher order.
{"title":"A Tunable Coaxial Filter with Minimum Variations in Absolute Bandwidth and Q using a Single Tuning Element","authors":"G. B., R. Mansour","doi":"10.1109/mwsym.2019.8700936","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700936","url":null,"abstract":"This paper presents a novel high Q tunable coaxial filter, which maintains a constant absolute bandwidth and a constant Q over the tuning range. The key feature of the proposed filter configuration is that it is tuned by a single rotational mechanism irrespective of the filter order. The filter is capable to achieve a tuning range of 30% with a very minimum variations in bandwidth and insertion loss. A prototype 4-pole filter is developed at 2.5 GHz with a fractional bandwidth of 4% to verify the concept. The measured tuning range of the filter is 20% with insertion loss better than 0.4 dB over the entire tuning range. The measured bandwidth variation is within ±10% and insertion loss variation is within 0.05 dB over the tuning range. The concept is easily expandable to filters with higher order.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"22 1","pages":"95-97"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78168806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700805
Zhen Tian, Yunbo Rao, Zhixian Deng, Xun Luo
In this paper, a reconfigurable dual-band filtering power divider (FPD) with the wide tuning range and ultra-wide stopband is proposed. The hybrid stepped-impedance microstrip line/square defected ground structure (SIML/SDGS) can introduce a lowpass response with an ultra-wide stopband. Meanwhile, the coupled varactor-loaded tri-branch resonators with SDGS are utilized to adjust the coupling coefficient for improving passband bandwidth. To verify the aforementioned mechanisms, a reconfigurable dual-band bandpass FPD is developed with merits of the wide tuning range, high selectivity, and ultra-wide stopband. The measured results exhibit that the frequency tuning ranges of the proposed power divider are 57% and 41% for the dual-band, respectively. Meanwhile, the harmonic suppression is up to 23.5 times of the lowest passband center frequency (i.e., 0.85 GHz) with a rejection level higher than 25 dB.
{"title":"Reconfigurable Dual-Band Filtering Power Divider With Ultra-Wide Stopband Using Hybrid Microstrip/Square Defected Ground Structure","authors":"Zhen Tian, Yunbo Rao, Zhixian Deng, Xun Luo","doi":"10.1109/mwsym.2019.8700805","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700805","url":null,"abstract":"In this paper, a reconfigurable dual-band filtering power divider (FPD) with the wide tuning range and ultra-wide stopband is proposed. The hybrid stepped-impedance microstrip line/square defected ground structure (SIML/SDGS) can introduce a lowpass response with an ultra-wide stopband. Meanwhile, the coupled varactor-loaded tri-branch resonators with SDGS are utilized to adjust the coupling coefficient for improving passband bandwidth. To verify the aforementioned mechanisms, a reconfigurable dual-band bandpass FPD is developed with merits of the wide tuning range, high selectivity, and ultra-wide stopband. The measured results exhibit that the frequency tuning ranges of the proposed power divider are 57% and 41% for the dual-band, respectively. Meanwhile, the harmonic suppression is up to 23.5 times of the lowest passband center frequency (i.e., 0.85 GHz) with a rejection level higher than 25 dB.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"101 1","pages":"428-431"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80605433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：