Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700762
M. Ćwikliński, P. Bruckner, S. Leone, C. Friesicke, R. Lozar, H. Mabler, R. Quay, O. Ambacher
We report on three state-of-the-art G-band (140–220GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12dB gain at 190GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3 dB of gain at 179 GHz with a bandwidth of 12GHz (172–184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279 mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2%. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.
{"title":"190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth","authors":"M. Ćwikliński, P. Bruckner, S. Leone, C. Friesicke, R. Lozar, H. Mabler, R. Quay, O. Ambacher","doi":"10.1109/mwsym.2019.8700762","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700762","url":null,"abstract":"We report on three state-of-the-art G-band (140–220GHz) GaN amplifier MMICs. A 4-stage common-source amplifier can provide a small-signal gain of 10dB at 190 GHz with a 3-dB bandwidth of 40GHz (156–196 GHz). A 5-stage common-source MMIC achieves up to 12dB gain at 190GHz with a 36-GHz (157–193 GHz) bandwidth. Additionally, a 2-stage amplifier using inductive degeneration shows 6.3 dB of gain at 179 GHz with a bandwidth of 12GHz (172–184 GHz). At 190 GHz, the 5-stage amplifier can deliver 14.1 dBm (279 mW/mm) of output power at the 1.8-dB gain-compression point with a corresponding power-added efficiency of 1.2%. To the best of our knowledge, these amplifiers show the highest gain above 170GHz among any reported GaN-based MMICs. This is also the first demonstration of multi-stage GaN circuits that can provide gain up to the 200-GHz mark.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"130 1","pages":"1257-1260"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76406274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700727
M. Ben-Sassi, G. Neveux, D. Barataud
This paper describes an on-wafer fully calibrated characterization system of GaN power transistors for the simultaneous and coherent extraction of, on the one hand, the complex envelopes of the microwave (RF) voltages and currents and, on the other hand, the Low Frequency (LF) drain current generated by the non-linearities of the measured components. The complex voltage and current envelopes at both ports of the Devices Under Test (DUT) are extracted by coherent interleaving sub-sampling followed by Digital Down Conversion (DDC) [1]. The LF drain voltage and current are simultaneously measured at the output plane of the power supplies. An AlGaN/GaN HEMT has been characterized with different periodic irregular radar burst excitations.The main originality of this work lies in the fact that the generated RF time-domain waveforms used for the excitation of the transistors have been corrected to strongly reduce the emergence of the Gibbs phenomenon [2]. Lanczos-series have already been implemented in general-purpose simulator but, to our knowledge, this is the first time that they are directly used to generate a useful excitation signal in a microwave characterization system.
{"title":"Ultra-Fast (13ns) Low Frequency/Microwave Transient Measurements, Application to GaN Transistors Characterization of Pulse to Pulse Stability","authors":"M. Ben-Sassi, G. Neveux, D. Barataud","doi":"10.1109/mwsym.2019.8700727","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700727","url":null,"abstract":"This paper describes an on-wafer fully calibrated characterization system of GaN power transistors for the simultaneous and coherent extraction of, on the one hand, the complex envelopes of the microwave (RF) voltages and currents and, on the other hand, the Low Frequency (LF) drain current generated by the non-linearities of the measured components. The complex voltage and current envelopes at both ports of the Devices Under Test (DUT) are extracted by coherent interleaving sub-sampling followed by Digital Down Conversion (DDC) [1]. The LF drain voltage and current are simultaneously measured at the output plane of the power supplies. An AlGaN/GaN HEMT has been characterized with different periodic irregular radar burst excitations.The main originality of this work lies in the fact that the generated RF time-domain waveforms used for the excitation of the transistors have been corrected to strongly reduce the emergence of the Gibbs phenomenon [2]. Lanczos-series have already been implemented in general-purpose simulator but, to our knowledge, this is the first time that they are directly used to generate a useful excitation signal in a microwave characterization system.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"75 1","pages":"1383-1386"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79276536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700759
E. Polat, R. Reese, M. Jost, M. Nickel, C. Schuster, R. Jakoby, H. Maune
This paper presents a continuously tunable nonradiative dielectric waveguide (NRD) phase shifter based on liquid crystal (LC) technology at W-band. LC is inserted in the NRD’s dielectric core to obtain tunability. Compared to other dielectric waveguides, which are prone to radiation losses, the NRD is radiation free even at bends and discontinuities. A maximum differential phase shift of 280° was achieved with an electric biasing voltage of ±150 V, accompanied with insertion losses between 2.9 dB to 4.9 dB, resulting in a maximum Figure-of-Merit of 85 °/dB.
{"title":"Liquid Crystal Phase Shifter Based on Nonradiative Dielectric Waveguide Topology at W-Band","authors":"E. Polat, R. Reese, M. Jost, M. Nickel, C. Schuster, R. Jakoby, H. Maune","doi":"10.1109/mwsym.2019.8700759","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700759","url":null,"abstract":"This paper presents a continuously tunable nonradiative dielectric waveguide (NRD) phase shifter based on liquid crystal (LC) technology at W-band. LC is inserted in the NRD’s dielectric core to obtain tunability. Compared to other dielectric waveguides, which are prone to radiation losses, the NRD is radiation free even at bends and discontinuities. A maximum differential phase shift of 280° was achieved with an electric biasing voltage of ±150 V, accompanied with insertion losses between 2.9 dB to 4.9 dB, resulting in a maximum Figure-of-Merit of 85 °/dB.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"9 1","pages":"184-187"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78218370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8701021
M. Celuch, W. Gwarek, A. Wiȩckowski
A new method of resolution improvement for dielectric resonator material measurements is proposed. Initially, a material sample is scanned with the resonator over a 2D mesh of scanning points, and thereby at each point a weighted average of complex permittivity over the region interacting with the resonator fields is produced. Then a space-domain implicit (SDI) problem is formulated that relates the explicit measurements to the enhanced permittivity pattern through the pre-simulated electric field pattern of the resonator. A robust SVD-based technique for solving the implicit problem is developed. The SDI method is validated on virtual samples and successfully applied to the available laboratory scan.
{"title":"Enhanced - resolution material imaging with dielectric resonators: a new implicit space - domain technique","authors":"M. Celuch, W. Gwarek, A. Wiȩckowski","doi":"10.1109/mwsym.2019.8701021","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8701021","url":null,"abstract":"A new method of resolution improvement for dielectric resonator material measurements is proposed. Initially, a material sample is scanned with the resonator over a 2D mesh of scanning points, and thereby at each point a weighted average of complex permittivity over the region interacting with the resonator fields is produced. Then a space-domain implicit (SDI) problem is formulated that relates the explicit measurements to the enhanced permittivity pattern through the pre-simulated electric field pattern of the resonator. A robust SVD-based technique for solving the implicit problem is developed. The SDI method is validated on virtual samples and successfully applied to the available laboratory scan.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"27 1","pages":"55-58"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81623906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700974
T. Shivan, Maruf Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich, V. Krozer
This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.
{"title":"Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers","authors":"T. Shivan, Maruf Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich, V. Krozer","doi":"10.1109/mwsym.2019.8700974","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700974","url":null,"abstract":"This work reports a high-isolation SPDT switch re-alized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while introducing only marginally higher insertion loss. Due to the low intrinsic capacitance of the InP DHBT transistors with 350 GHz fmax, the circuit achieves a bandwidth of from 90 to 170 GHz, with an overall isolation of more than 45 dB and an insertion loss of 3.5 … 5 dB. Moreover, the circuit achieves highly linear operation with measured Pin1dB exceeding 15 dBm at 110 GHz frequency. It consumes a DC power of 5 mW only.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"2006 1","pages":"1011-1014"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86266058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/MWSYM.2019.8700763
Nhu-Huan Nguyen, A. Ghiotto, T. Martin, A. Vilcot, K. Wu, T. Vuong
This paper presents a 90° self-compensating phase shifter based on a slab air-filled substrate integrated waveguide platform in Ka-band. A shorter phase shifter is obtained due to its operation mechanism. The measurement shows a relative phase shift of 88 ± 7.8°, or around 8.9% for phase error, and an amplitude imbalance of 0.06 ± 0.14 dB over Ka-band. A theoretical study is presented together with simulation to understand the operation principle of this phase shifter. Simulation and measurement results are compared and discussed.
{"title":"A 90° Self-Compensating Slab Air-Filled Substrate Integrated Waveguide Phase Shifter","authors":"Nhu-Huan Nguyen, A. Ghiotto, T. Martin, A. Vilcot, K. Wu, T. Vuong","doi":"10.1109/MWSYM.2019.8700763","DOIUrl":"https://doi.org/10.1109/MWSYM.2019.8700763","url":null,"abstract":"This paper presents a 90° self-compensating phase shifter based on a slab air-filled substrate integrated waveguide platform in Ka-band. A shorter phase shifter is obtained due to its operation mechanism. The measurement shows a relative phase shift of 88 ± 7.8°, or around 8.9% for phase error, and an amplitude imbalance of 0.06 ± 0.14 dB over Ka-band. A theoretical study is presented together with simulation to understand the operation principle of this phase shifter. Simulation and measurement results are compared and discussed.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"580-583"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83620780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700855
M. Saeed, Eduard Heidebrecht, A. Hamed, R. Negra
This work presents for the first time the unique properties of graphene quantum capacitance (CQ) in parametric circuits. The combination of the CQ and parametric operation results in a distinct topology which enables the realisation of RF powered, receiver and transmitter frontends, with high conversion gain (GC) and relaxed local oscillator (LO) requirements. The presented prospect is discussed in details for the down-conversion case. Feasibility of the proposed approach is validated by designing a heterodyne RF receiver frontend centered at 29 GHz. A Verilog-A behavioural model, extracted from S-parameter measurements of a graphene varactor on flexible kapton foil is employed in the verification. Simulation results provide a positive GC of 20 dB and a noise figure (NF) of 4.7 dB without the need for DC bias. The results agree with the presented theoretical analysis of the proposed concept.
{"title":"Exploiting Graphene Quantum Capacitance in Subharmonic Parametric Downconversion","authors":"M. Saeed, Eduard Heidebrecht, A. Hamed, R. Negra","doi":"10.1109/mwsym.2019.8700855","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700855","url":null,"abstract":"This work presents for the first time the unique properties of graphene quantum capacitance (CQ) in parametric circuits. The combination of the CQ and parametric operation results in a distinct topology which enables the realisation of RF powered, receiver and transmitter frontends, with high conversion gain (GC) and relaxed local oscillator (LO) requirements. The presented prospect is discussed in details for the down-conversion case. Feasibility of the proposed approach is validated by designing a heterodyne RF receiver frontend centered at 29 GHz. A Verilog-A behavioural model, extracted from S-parameter measurements of a graphene varactor on flexible kapton foil is employed in the verification. Simulation results provide a positive GC of 20 dB and a noise figure (NF) of 4.7 dB without the need for DC bias. The results agree with the presented theoretical analysis of the proposed concept.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"1111-1114"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79534543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8701000
Ahmed S. H. Ahmed, A. Simsek, A. Farid, A. Carter, M. Urteaga, M. Rodwell
We report a high output power transmitter and a low DC power receiver front-end channels of a phased array transceiver, designed in heterogeneously integrated 250 nm InP HBT and 130 nm Si CMOS technologies. The transmitter channel consists of a variable gain amplifier, an IQ-vector-modulator-based phase shifter, and a power amplifier. External Analog control signals are used to adjust the phase shifter and VGA states. The transmitter has a saturated output power of 16dBm at 90GHz while consuming 885mW DC power. The receiver channel uses a low noise amplifier with a similar phase shifter, and a variable gain amplifier. 4-bit DACs are implemented in the CMOS to control the phase shifter and VGA. The overall the receiver channel has ~26dB small signal gain at 58.6 mW DC power dissipation. The areas of the transmitter and receiver channels are 2.7x0.81mm2 and 2.1x0.76mm2 respectively.
{"title":"A W-Band transmitter channel with 16dBm output power and a receiver channel with 58.6mW DC power consumption using heterogeneously integrated InP HBT and Si CMOS technologies","authors":"Ahmed S. H. Ahmed, A. Simsek, A. Farid, A. Carter, M. Urteaga, M. Rodwell","doi":"10.1109/mwsym.2019.8701000","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8701000","url":null,"abstract":"We report a high output power transmitter and a low DC power receiver front-end channels of a phased array transceiver, designed in heterogeneously integrated 250 nm InP HBT and 130 nm Si CMOS technologies. The transmitter channel consists of a variable gain amplifier, an IQ-vector-modulator-based phase shifter, and a power amplifier. External Analog control signals are used to adjust the phase shifter and VGA states. The transmitter has a saturated output power of 16dBm at 90GHz while consuming 885mW DC power. The receiver channel uses a low noise amplifier with a similar phase shifter, and a variable gain amplifier. 4-bit DACs are implemented in the CMOS to control the phase shifter and VGA. The overall the receiver channel has ~26dB small signal gain at 58.6 mW DC power dissipation. The areas of the transmitter and receiver channels are 2.7x0.81mm2 and 2.1x0.76mm2 respectively.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"106 1","pages":"654-657"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87875902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700895
T. Shivan, Maruf Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich, V. Krozer
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.
{"title":"A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology","authors":"T. Shivan, Maruf Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich, V. Krozer","doi":"10.1109/mwsym.2019.8700895","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700895","url":null,"abstract":"This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set provide the ultra-wideband properties of this amplifier. A transistor node of 500 nm is used which has an ft and fmax of 350 and 490 GHz respectively. The measurements show a small-signal gain of 12 dB with a 3-dB bandwidth of near-DC to 175 GHz. For large signal operation, the circuit reaches a 1-dB output compression point, P1dB, of 8.4 dBm at 150 GHz, a saturated output power of approximately 10 dBm, and an associated maximum PAE of 6 %. This is the best linearity as well as the highest saturated output power and PAE reported at this frequency for DAs. The circuit consumes 180 mW DC power only.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"06 1","pages":"1253-1256"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85246361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-02DOI: 10.1109/mwsym.2019.8700728
T. Martin, A. Ghiotto, T. Vuong, K. Wu, Frédéric Lotz
A quasi-elliptic filter topology based on high performance air-filled substrate integrated waveguide (AFSIW) technological platform is presented. This new topology takes advantage of the AFSIW multilayer property to implement a cross coupling between non-adjacent resonators while maintaining the self-packaging characteristics of AFSIW filters. By etching inductive windows on the top copper layer of the AFSIW bottom substrate, a second signal path is created using an SIW transmission line. Thus, the primary path of the signal is implemented using a lossless medium (air in the milled inner substrate) and the second path is implemented in the bottom substrate. The multipath coupling diagram is constructed, considering a fourth order filter. Then, the relative phase shifts of the primary and secondary path are determined to obtain transmission zeros. For experimental validation, a quasi-elliptic fourth order filter demonstrator operating at 21 GHz with a 350 MHz (1.66 %) bandwidth is designed, fabricated and measured. Furthermore, a study shows its high robustness against printed circuit board (PCB) process manufacturing, considering standard tolerances. In and out band measured results are in a good agreement with simulated results. The fabricated filter achieves an insertion loss as low as 0.7 dB with an excellent unloaded Q-factor of 1478.
{"title":"Compact Quasi-Elliptic and Highly Selective AFSIW Filter with Multilayer Cross-Coupling","authors":"T. Martin, A. Ghiotto, T. Vuong, K. Wu, Frédéric Lotz","doi":"10.1109/mwsym.2019.8700728","DOIUrl":"https://doi.org/10.1109/mwsym.2019.8700728","url":null,"abstract":"A quasi-elliptic filter topology based on high performance air-filled substrate integrated waveguide (AFSIW) technological platform is presented. This new topology takes advantage of the AFSIW multilayer property to implement a cross coupling between non-adjacent resonators while maintaining the self-packaging characteristics of AFSIW filters. By etching inductive windows on the top copper layer of the AFSIW bottom substrate, a second signal path is created using an SIW transmission line. Thus, the primary path of the signal is implemented using a lossless medium (air in the milled inner substrate) and the second path is implemented in the bottom substrate. The multipath coupling diagram is constructed, considering a fourth order filter. Then, the relative phase shifts of the primary and secondary path are determined to obtain transmission zeros. For experimental validation, a quasi-elliptic fourth order filter demonstrator operating at 21 GHz with a 350 MHz (1.66 %) bandwidth is designed, fabricated and measured. Furthermore, a study shows its high robustness against printed circuit board (PCB) process manufacturing, considering standard tolerances. In and out band measured results are in a good agreement with simulated results. The fabricated filter achieves an insertion loss as low as 0.7 dB with an excellent unloaded Q-factor of 1478.","PeriodicalId":6720,"journal":{"name":"2019 IEEE MTT-S International Microwave Symposium (IMS)","volume":"22 1","pages":"718-721"},"PeriodicalIF":0.0,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81973817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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