Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198958
A. Rodriguez, Author Ramirez, Author De La Rosa, A. Enriquez, Author Arquero, Author Rivera, Author Bustamante, Author Telles, Author Valerio, A. Hodges
Solar cell research aims at a gradual increment on the overall power conversion efficiency, looking into the possibility of an increment on the output current of the device. This research discusses the different methods applied during experimentation allowing for the reach of higher efficiency, explaining the effects each method had on the different samples used. Some of the methods to be discussed are some conventional methods in the creation of perovskite solar cells such as sonication, spin spin-on doping, annealing, and contact creation. In accordance to the methods used, a power conversion efficiency of 15.2% was obtained, as well as an open circuit voltage (Voc) of 1.065 V, a short circuit current (Isc) of 1.99 mA, a fill factor (FF) of 50.4%, a short circuit current density (Jsc) of 28.2 mA/cm2, and a shunt resistance of 3.3 kΩ. Each sample is discussed in order to provide a wider view on the positive and negative aspects of each method applied.
{"title":"Manufacturing Processes for the Creation of 15% Power Conversion Efficiency Inorganic Inorganic-Organic Perovskite Solar Cells","authors":"A. Rodriguez, Author Ramirez, Author De La Rosa, A. Enriquez, Author Arquero, Author Rivera, Author Bustamante, Author Telles, Author Valerio, A. Hodges","doi":"10.1109/PVSC40753.2019.9198958","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198958","url":null,"abstract":"Solar cell research aims at a gradual increment on the overall power conversion efficiency, looking into the possibility of an increment on the output current of the device. This research discusses the different methods applied during experimentation allowing for the reach of higher efficiency, explaining the effects each method had on the different samples used. Some of the methods to be discussed are some conventional methods in the creation of perovskite solar cells such as sonication, spin spin-on doping, annealing, and contact creation. In accordance to the methods used, a power conversion efficiency of 15.2% was obtained, as well as an open circuit voltage (Voc) of 1.065 V, a short circuit current (Isc) of 1.99 mA, a fill factor (FF) of 50.4%, a short circuit current density (Jsc) of 28.2 mA/cm2, and a shunt resistance of 3.3 kΩ. Each sample is discussed in order to provide a wider view on the positive and negative aspects of each method applied.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"115 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89106524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198964
J. Hofstetter, R. Fraser, R. Jonczyk, A. Erşen, John Linton, A. Lorenz
Kerfless p-type wafers of varying resistivity are grown with Direct Wafer technology with precise control of dosing the Boron concentration in the melt. At very low Boron concentration, bulk resistivity values ≫100 Ω-cm are achieved and an effective lifetime above 1 ms is measured, corresponding to an estimated bulk lifetime around 2 ms. In contrast to ingot-based wafers, continuous growth using Direct Wafer technology produces a very tight resistivity distribution at any desired target resistivity, without variations caused by zone refining. In addition, the technology enables growth of 3D wafers, e.g. thin wafers with a thick frame that allows to maintain mechanical wafer strength. Thus, Direct Wafer product can be customized for a given solar cell architecture by growing each individual wafer at the optimum bulk resistivity and optimum thickness.
{"title":"Exceeding 1 ms effective lifetime in High High-Resistivity P-Type Kerfless Multi-crystalline Wafers","authors":"J. Hofstetter, R. Fraser, R. Jonczyk, A. Erşen, John Linton, A. Lorenz","doi":"10.1109/PVSC40753.2019.9198964","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198964","url":null,"abstract":"Kerfless p-type wafers of varying resistivity are grown with Direct Wafer technology with precise control of dosing the Boron concentration in the melt. At very low Boron concentration, bulk resistivity values ≫100 Ω-cm are achieved and an effective lifetime above 1 ms is measured, corresponding to an estimated bulk lifetime around 2 ms. In contrast to ingot-based wafers, continuous growth using Direct Wafer technology produces a very tight resistivity distribution at any desired target resistivity, without variations caused by zone refining. In addition, the technology enables growth of 3D wafers, e.g. thin wafers with a thick frame that allows to maintain mechanical wafer strength. Thus, Direct Wafer product can be customized for a given solar cell architecture by growing each individual wafer at the optimum bulk resistivity and optimum thickness.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87473640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198953
J. Geisz, R. France, M. Steiner, T. Moriarty, Tao Song
Accurate measurements of six-junction inverted metamorphic concentrator solar cells under AM1.5 direct spectrum are obtained by adjusting the spectrum of a tunable high-intensity solar simulator with custom mirrors. Isotype reference cells and broadband InGaAs QE calibration cells were developed for accurate measurements. Modeling and varying the illumination show that an unavoidable 15% - 17% overillumination on the sixth junction does not result in significant error of these 6J IMM devices. Spectrally adjusted flash measurements are independently confirmed by NREL's Cell and Module Performance team. Concentration measurements of a 6J IMM solar cell resulted in 47.1 ± 3.2% (absolute) efficiency at 143 suns.
{"title":"Measurements of Six-Junction Concentrator Solar Cells","authors":"J. Geisz, R. France, M. Steiner, T. Moriarty, Tao Song","doi":"10.1109/PVSC40753.2019.9198953","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198953","url":null,"abstract":"Accurate measurements of six-junction inverted metamorphic concentrator solar cells under AM1.5 direct spectrum are obtained by adjusting the spectrum of a tunable high-intensity solar simulator with custom mirrors. Isotype reference cells and broadband InGaAs QE calibration cells were developed for accurate measurements. Modeling and varying the illumination show that an unavoidable 15% - 17% overillumination on the sixth junction does not result in significant error of these 6J IMM devices. Spectrally adjusted flash measurements are independently confirmed by NREL's Cell and Module Performance team. Concentration measurements of a 6J IMM solar cell resulted in 47.1 ± 3.2% (absolute) efficiency at 143 suns.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83343234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198971
Chinmay Vad, A. Aguilar, A. Srinivasa, S. Kurtz, C. Honsberg, R. King
Installed photovoltaic capacity has been rapidly increasing as the price of solar modules has continued to fall. When photovoltaic (PV) generation approaches the mid-day electric load demand, actions must be taken to balance the supply and demand. The challenge of matching the generation and demand is expected to vary with location. The goal of this project is to estimate the amount of PV that Regional Transmission Organizations (RTO) in the United States can afford to have on its grid before solar curtailment, storage, or load shifting will become important at mid-day to maintain balance of supply and demand. This paper uses historical renewable generation and load data for each RTO to assess imbalance between electricity supply and demand as solar generation increases. Imbalance was estimated as a function of solar penetration. Two scenarios were used to model the imbalance: 1) when the net load is calculated to be negative (PV generation exceeds the demand); and 2) when net load is less than a minimum generation limit value, e.g., determined by policy for baseload generation from conventional sources. The impact of increasing solar generation on real-time pricing is studied for the case of California, which presently has the highest solar penetration of the U.S. RTOs. This paper thus provides data-based projections for U.S. RTOs on the degree to which storage, load shifting, or trading on energy imbalance markets will need to be adopted to avoid severe curtailment of solar PV electricity generation.
{"title":"Effects of increasing PV deployment on US Regional Transmission Organizations","authors":"Chinmay Vad, A. Aguilar, A. Srinivasa, S. Kurtz, C. Honsberg, R. King","doi":"10.1109/PVSC40753.2019.9198971","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198971","url":null,"abstract":"Installed photovoltaic capacity has been rapidly increasing as the price of solar modules has continued to fall. When photovoltaic (PV) generation approaches the mid-day electric load demand, actions must be taken to balance the supply and demand. The challenge of matching the generation and demand is expected to vary with location. The goal of this project is to estimate the amount of PV that Regional Transmission Organizations (RTO) in the United States can afford to have on its grid before solar curtailment, storage, or load shifting will become important at mid-day to maintain balance of supply and demand. This paper uses historical renewable generation and load data for each RTO to assess imbalance between electricity supply and demand as solar generation increases. Imbalance was estimated as a function of solar penetration. Two scenarios were used to model the imbalance: 1) when the net load is calculated to be negative (PV generation exceeds the demand); and 2) when net load is less than a minimum generation limit value, e.g., determined by policy for baseload generation from conventional sources. The impact of increasing solar generation on real-time pricing is studied for the case of California, which presently has the highest solar penetration of the U.S. RTOs. This paper thus provides data-based projections for U.S. RTOs on the degree to which storage, load shifting, or trading on energy imbalance markets will need to be adopted to avoid severe curtailment of solar PV electricity generation.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"25 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75469729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198967
J. Jang, Jinyoung Kim
Recently the power conversion efficiency of lead (Pb)-based organometallic halide perovskite materials was reached to 23 %. Despite of its excellent performance, the issue of environment and health still remained due to the lead toxicity. Therefore, the double perovskite (A2B'B"X6) which was composed of binary B site cations was particularly investigated as suitable non-toxic and lead-free perovskite composition. In this work, we synthesized all inorganic halide double perovskite composition, Cs2AgBiBr6 with dropping method. Furthermore, the p-i-n double perovskite solar cell was designed and improved by applying various hole and electron transporting layers based on the optimization of band alignment.
{"title":"Attempt to Design a Facile Lead-free Halide Double Perovskite Cs2AgBiBr6 p-i-n Solar Cell","authors":"J. Jang, Jinyoung Kim","doi":"10.1109/PVSC40753.2019.9198967","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198967","url":null,"abstract":"Recently the power conversion efficiency of lead (Pb)-based organometallic halide perovskite materials was reached to 23 %. Despite of its excellent performance, the issue of environment and health still remained due to the lead toxicity. Therefore, the double perovskite (A2B'B\"X6) which was composed of binary B site cations was particularly investigated as suitable non-toxic and lead-free perovskite composition. In this work, we synthesized all inorganic halide double perovskite composition, Cs2AgBiBr6 with dropping method. Furthermore, the p-i-n double perovskite solar cell was designed and improved by applying various hole and electron transporting layers based on the optimization of band alignment.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"23 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78056678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198992
V. Achard, S. Béchu, M. Balestrieri, M. Bouttemy, M. Jubault, A. Etcheberry, D. Lincot, F. Donsanti
One of the key parameters to achieve high efficienc y Cu(In,Ga)Se Se2 (CIGS) solar cells is the proper control of Ga grading. From previous results, by using bulk material characterization, a first assessment of the CIGS growth on polyimide foils at low temperature was performed. Moreover, a maximum efficiency of 17.8% ha has been achieved with steep Ga grading. Here, a first step to the establishment of a growth model of CIGS grown at low temperature is proposed by coupling surface and volume characterization. Then, simulation of the photovoltaic performances of the cell is used to complete experimental observations and to explain the benefic ial effect of steep Ga grading.
{"title":"Analysis of Cu(In,Ga) Se grading evolution during low deposition temperature co-evaporation process by GD-OES and XPS measurements. Impact on solar cell performances and modelling","authors":"V. Achard, S. Béchu, M. Balestrieri, M. Bouttemy, M. Jubault, A. Etcheberry, D. Lincot, F. Donsanti","doi":"10.1109/PVSC40753.2019.9198992","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198992","url":null,"abstract":"One of the key parameters to achieve high efficienc y Cu(In,Ga)Se Se2 (CIGS) solar cells is the proper control of Ga grading. From previous results, by using bulk material characterization, a first assessment of the CIGS growth on polyimide foils at low temperature was performed. Moreover, a maximum efficiency of 17.8% ha has been achieved with steep Ga grading. Here, a first step to the establishment of a growth model of CIGS grown at low temperature is proposed by coupling surface and volume characterization. Then, simulation of the photovoltaic performances of the cell is used to complete experimental observations and to explain the benefic ial effect of steep Ga grading.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"58 1","pages":"1-7"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75848420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198976
Thomas Bidaud, J. Moseley, M. Al-Jassim, M. Amarasinghe, W. Metzger, S. Collin
Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12 temperature.
{"title":"Spatially and spectrally resolved defects in polycrystalline CdTe thin films revealed by quantitative cathodoluminescence","authors":"Thomas Bidaud, J. Moseley, M. Al-Jassim, M. Amarasinghe, W. Metzger, S. Collin","doi":"10.1109/PVSC40753.2019.9198976","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198976","url":null,"abstract":"Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC12 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC12 temperature.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80104628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198989
V. Shabunko, T. Reindl
Building integrated photovoltaics (BIPV) on façade areas is an innovative trend for on-site clean energy generation on a large façade areas and hence also for the reduction of greenhouse gas emissions. For densely built-up environments like the city state of Singapore, optimally integrated BIPV systems into the building envelope are critical to achieve Super Low Energy (SLE), or even Zero Energy (ZE) or Plus Energy (PE) buildings. In the framework of a Sino-Singapore research project, a first real-world test-bedding of colored BIPV façades have been conducted at National University of Singapore (NUS) campus. This paper discusses the financial viability of an innovative colored BIPV technology for applications in tropical urban areas and beyond.
{"title":"High-level financial assessment of colored BIPV façades: Case study in Singapore","authors":"V. Shabunko, T. Reindl","doi":"10.1109/PVSC40753.2019.9198989","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198989","url":null,"abstract":"Building integrated photovoltaics (BIPV) on façade areas is an innovative trend for on-site clean energy generation on a large façade areas and hence also for the reduction of greenhouse gas emissions. For densely built-up environments like the city state of Singapore, optimally integrated BIPV systems into the building envelope are critical to achieve Super Low Energy (SLE), or even Zero Energy (ZE) or Plus Energy (PE) buildings. In the framework of a Sino-Singapore research project, a first real-world test-bedding of colored BIPV façades have been conducted at National University of Singapore (NUS) campus. This paper discusses the financial viability of an innovative colored BIPV technology for applications in tropical urban areas and beyond.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89981078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198955
D. Ory, A. Bercegol, D. Suchet, Jean-Baptiste Puel, Amadéo Michaud, A. B. Slimane, S. Collin, Stefania Cacovich, Olivier Fournier, Amelle Rebai, J. Rousset, J. Guillemoles, L. Lombez
Among all the characterization methods in the photovoltaic research area the luminescence luminescence-based ones offer multiple advantages. Indeed, it is possible to analyze both photovoltaic materials and devices in a quantitative way since the luminescence signals are linked to several photovoltaic conversion mechanisms such as the voltage generation, charge extraction or diffusion length. Here we use imaging methods to probe the transport properties and/or image material inhomogeneities. By using multi multi-dimensional imaging systems, we show how we can broaden the range of determined optoelectronic properties. A focus is made on transport properties applied to multiple PV absorbers.
{"title":"Multi-dimensional luminescence imaging: accessing transport properties","authors":"D. Ory, A. Bercegol, D. Suchet, Jean-Baptiste Puel, Amadéo Michaud, A. B. Slimane, S. Collin, Stefania Cacovich, Olivier Fournier, Amelle Rebai, J. Rousset, J. Guillemoles, L. Lombez","doi":"10.1109/PVSC40753.2019.9198955","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198955","url":null,"abstract":"Among all the characterization methods in the photovoltaic research area the luminescence luminescence-based ones offer multiple advantages. Indeed, it is possible to analyze both photovoltaic materials and devices in a quantitative way since the luminescence signals are linked to several photovoltaic conversion mechanisms such as the voltage generation, charge extraction or diffusion length. Here we use imaging methods to probe the transport properties and/or image material inhomogeneities. By using multi multi-dimensional imaging systems, we show how we can broaden the range of determined optoelectronic properties. A focus is made on transport properties applied to multiple PV absorbers.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-16DOI: 10.1109/PVSC40753.2019.9198949
Xin Zheng, D. Kuciauskas, J. Moseley, E. Colegrove, D. Albin, H. Moutinho, J. Duenow, S. Harvey, T. Ablekim, A. Ferguson, S. Sivananthan, W. Metzger
Here, we have developed CdSexTe1-x/CdTe bilayer deposition for graded solar cell technolgoly technolgoly. Smoothly graded Se profiles with > 16% efficiency with Jsc=28 mA/cm2 and 20-ns bulk lifetime has been observed observed. The CdSeTe reveals longer carrier lifetimes than CdTe within the same device.
{"title":"Synthesis of CdSeCdSexTe1-x/CdTe for graded solar cells","authors":"Xin Zheng, D. Kuciauskas, J. Moseley, E. Colegrove, D. Albin, H. Moutinho, J. Duenow, S. Harvey, T. Ablekim, A. Ferguson, S. Sivananthan, W. Metzger","doi":"10.1109/PVSC40753.2019.9198949","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.9198949","url":null,"abstract":"Here, we have developed CdSe<sub>x</sub>Te<sub>1-x</sub>/CdTe bilayer deposition for graded solar cell technolgoly technolgoly. Smoothly graded Se profiles with > 16% efficiency with Jsc=28 <sub>m</sub>A/cm<sup>2</sup> and 20-ns bulk lifetime has been observed observed. The CdSeTe reveals longer carrier lifetimes than CdTe within the same device.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"14 3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2019-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78401741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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