Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980657
Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura
We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.
{"title":"Evaluation of ITO/a-Si Interface Fabricated by RPD Technique","authors":"Tappei Nishihara, T. Kamioka, Hiroki Kanai, Y. Ohshita, H. Matsumura, S. Yasuno, I. Hirosawa, A. Ogura","doi":"10.1109/PVSC40753.2019.8980657","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980657","url":null,"abstract":"We evaluated the ITO/p-type a-Si interface for Si heterojunction solar cells using XPS and TEM. It was found that ITO/a-Si interface which is 20 nm from the surface is oxidized by using non-destructive and non-contact HAXPES. The ITO/a-Si interface was oxidized during ITO film deposition by RPD technique, which leads to an increase in contact resistance. The chemical bonding states at the ITO/a-Si interface was modified by post deposition annealing (PDA). The TEM and the EDX mapping images revealed the interdiffusion of Si and Sn resulting in the interface roughness enhancement and the possible In precipitation in the a-Si layer.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"105 1","pages":"2702-2704"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77625907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8981218
T. Semba, Takeo Shimada, T. Fujita
Regarding the crystalline Silicon Photovoltaic module in which the corrosion of the front-side metallization occurred form near the bus bars in the high temperature high humidity test, the state of the finger metallization after the test was observed. Corrosion of the glass of the metallization was confirmed as in the previous report. In addition, there was a gap between the bulk Ag and the glass layer. This gap can cause an increase in series resistance between the emitter and the finger bars. Sn was also detected from a part of the corroded metallization surface.
{"title":"Influence of Front-Side Ag Metallization on High Temperature and High Humidity Test of Crystalline Silicon PV Module","authors":"T. Semba, Takeo Shimada, T. Fujita","doi":"10.1109/PVSC40753.2019.8981218","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8981218","url":null,"abstract":"Regarding the crystalline Silicon Photovoltaic module in which the corrosion of the front-side metallization occurred form near the bus bars in the high temperature high humidity test, the state of the finger metallization after the test was observed. Corrosion of the glass of the metallization was confirmed as in the previous report. In addition, there was a gap between the bulk Ag and the glass layer. This gap can cause an increase in series resistance between the emitter and the finger bars. Sn was also detected from a part of the corroded metallization surface.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"7 1","pages":"1525-1528"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79751849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980806
M. Stodolny, K. Tool, B. Geerligs, J. Löffler, A. Weeber, Yu Wu, J. Anker, Xiaoqian Lu, Ji Liu, P. Bronsveld, A. Mewe, G. Janssen, G. Coletti
In this paper we present our recent results on n+, p+ and intrinsic polysilicon contacts, including their contacting with industrial metallization process by screen printed fire-through pastes. The review is complemented by comparison with polysilicon passivation results by other relevant players in this field. We present record surface passivation levels on textured surfaces (J0~1 fA/cm2 for n+ polySi and J0<10 fA/cm2 for p+ and i-polySi), and record low contact recombination for screen printed fire-through metal contacts reaching down to 65 and 200 fA/cm2 for n+ and p+polySi, respectively. In addition, an improvement in the silicon bulk passivation can be attributed to the introduction of n+ polysilicon in the cell process. These results are the fundamental components to demonstrate a roadmap towards 24% industrial PERPoly (industrial TOPCon) cells.
{"title":"PolySi Based Passivating Contacts Enabling Industrial Silicon Solar Cell Efficiencies up to 24%","authors":"M. Stodolny, K. Tool, B. Geerligs, J. Löffler, A. Weeber, Yu Wu, J. Anker, Xiaoqian Lu, Ji Liu, P. Bronsveld, A. Mewe, G. Janssen, G. Coletti","doi":"10.1109/PVSC40753.2019.8980806","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980806","url":null,"abstract":"In this paper we present our recent results on n<sup>+</sup>, p<sup>+</sup> and intrinsic polysilicon contacts, including their contacting with industrial metallization process by screen printed fire-through pastes. The review is complemented by comparison with polysilicon passivation results by other relevant players in this field. We present record surface passivation levels on textured surfaces (J<inf>0</inf>~1 fA/cm<sup>2</sup> for n<sup>+</sup> polySi and J<inf>0</inf><10 fA/cm<sup>2</sup> for p<sup>+</sup> and i-polySi), and record low contact recombination for screen printed fire-through metal contacts reaching down to 65 and 200 fA/cm<sup>2</sup> for n<sup>+</sup> and p<sup>+</sup>polySi, respectively. In addition, an improvement in the silicon bulk passivation can be attributed to the introduction of n<sup>+</sup> polysilicon in the cell process. These results are the fundamental components to demonstrate a roadmap towards 24% industrial PERPoly (industrial TOPCon) cells.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"41 1","pages":"1456-1459"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79150737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980520
R. Norman, B. Siskavich, É. Léveillé, W. Cloutier, L. Fréchette, V. Aimez
In PV manufacturing, process costs fall rapidly with scale, but a slower decrease in material costs limits cost reduction. Analysis of a proposed multi-stage-concentration module shows that even with additional concentration stages for low tandem-cell cost, initial concentration by a trough mirror can greatly reduce overall materials usage compared to Fresnel/box CPV. A compact sealed module at the trough’s focus allows high-performance materials for efficiency and durability, and estimated costs (¢/W, LCOE, capital-to-scale) compare favorably to even silicon PV.
{"title":"Reducing CPV Materials Cost Through Multistage Concentration","authors":"R. Norman, B. Siskavich, É. Léveillé, W. Cloutier, L. Fréchette, V. Aimez","doi":"10.1109/PVSC40753.2019.8980520","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980520","url":null,"abstract":"In PV manufacturing, process costs fall rapidly with scale, but a slower decrease in material costs limits cost reduction. Analysis of a proposed multi-stage-concentration module shows that even with additional concentration stages for low tandem-cell cost, initial concentration by a trough mirror can greatly reduce overall materials usage compared to Fresnel/box CPV. A compact sealed module at the trough’s focus allows high-performance materials for efficiency and durability, and estimated costs (¢/W, LCOE, capital-to-scale) compare favorably to even silicon PV.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"23 1","pages":"0268-0272"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84498107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980732
Jing Huang, M. Khan, Yi Qin, Sam West
We propose and test a hybrid solar PV power forecasting model which optimally combines statistical and skycam-based forecasts. We show our model’s capability to produce accurate forecasts seamlessly from 10-s to 10-min ahead using high-frequency measurements in Canberra, Australia. The hybrid model relies on an empirical clear-sky model for solar power and the identification of three condition variables, which are able to separate and model characteristic events associated with them. It significantly overperforms both its statistical component and its skycam component alone, achieving a relative RMSE reduction (forecast skill) of 19% against persistence of clear-sky index at 5-min ahead.
{"title":"Hybrid Intra-hour Solar PV Power Forecasting using Statistical and Skycam-based Methods","authors":"Jing Huang, M. Khan, Yi Qin, Sam West","doi":"10.1109/PVSC40753.2019.8980732","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980732","url":null,"abstract":"We propose and test a hybrid solar PV power forecasting model which optimally combines statistical and skycam-based forecasts. We show our model’s capability to produce accurate forecasts seamlessly from 10-s to 10-min ahead using high-frequency measurements in Canberra, Australia. The hybrid model relies on an empirical clear-sky model for solar power and the identification of three condition variables, which are able to separate and model characteristic events associated with them. It significantly overperforms both its statistical component and its skycam component alone, achieving a relative RMSE reduction (forecast skill) of 19% against persistence of clear-sky index at 5-min ahead.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"2434-2439"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85189117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/pvsc40753.2019.8980581
R. Campesato, C. Baur, M. Carta, M. Casale, D. Chiesa, M. Gervasi, E. Gombia, E. Greco, Aldo Kingma, M. Nastasi, E. Previtali, P. Rancoita, D. Rozza, E. Santoro, M. Tacconi
Triple junction (InGaP/GaAs/Ge) and single junction (SJ) solar cells were irradiated with electrons, protons and neutrons. The degradation of remaining factors was analyzed as function of the induced Displacement Damage Dose (DDD) calculated by means of the SR-NIEL (Screened Relativistic Non Ionizing Energy Loss) approach. In particular, the aim of this work is to analyze the variation of the solar cells remaining factors due to neutron irradiation with respect to those previously obtained with electrons and protons. The current analysis confirms that the degradation of the Pmax electrical parameter is related by means of the usual semi-empirical expression to the displacement dose, independently of type of the incoming particle. Isc and Voc parameters were also measured as a function of the displacement damage dose. Furthermore, a DLTS analysis was carried out on diodes –with the same epitaxial structure as the middle sub-cell - irradiated with neutrons.
{"title":"NIEL Dose Analysis on triple and single junction InGaP/GaAs/Ge solar cells irradiated with electrons, protons and neutrons","authors":"R. Campesato, C. Baur, M. Carta, M. Casale, D. Chiesa, M. Gervasi, E. Gombia, E. Greco, Aldo Kingma, M. Nastasi, E. Previtali, P. Rancoita, D. Rozza, E. Santoro, M. Tacconi","doi":"10.1109/pvsc40753.2019.8980581","DOIUrl":"https://doi.org/10.1109/pvsc40753.2019.8980581","url":null,"abstract":"Triple junction (InGaP/GaAs/Ge) and single junction (SJ) solar cells were irradiated with electrons, protons and neutrons. The degradation of remaining factors was analyzed as function of the induced Displacement Damage Dose (DDD) calculated by means of the SR-NIEL (Screened Relativistic Non Ionizing Energy Loss) approach. In particular, the aim of this work is to analyze the variation of the solar cells remaining factors due to neutron irradiation with respect to those previously obtained with electrons and protons. The current analysis confirms that the degradation of the Pmax electrical parameter is related by means of the usual semi-empirical expression to the displacement dose, independently of type of the incoming particle. Isc and Voc parameters were also measured as a function of the displacement damage dose. Furthermore, a DLTS analysis was carried out on diodes –with the same epitaxial structure as the middle sub-cell - irradiated with neutrons.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"47 1","pages":"2381-2384"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85218180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980659
F. D. Lia, Francesca Lorè, R. Schioppo, R. L. Presti, M. Tucci
In this work different management strategies for Electrical Energy Storage Systems (EESS) have been modeled in the ENEA’s Simulator Plant and subsequently tested on field in the PV Plant. The Plant (12 kWp, 12 kWh) is equipped with ABB REACT1 systems. A relevant aspect of the Plant is the Energy Management System (EMS), developed by ENEA that allows the EESS control and supervision in real time according to the selected management strategy. Self-consumption and Peak-Shaving strategies have been modeled and successfully tested.
{"title":"Modelling and Validation on Field of EESS Management Strategies in Grid-Connected PV Systems for End Users","authors":"F. D. Lia, Francesca Lorè, R. Schioppo, R. L. Presti, M. Tucci","doi":"10.1109/PVSC40753.2019.8980659","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980659","url":null,"abstract":"In this work different management strategies for Electrical Energy Storage Systems (EESS) have been modeled in the ENEA’s Simulator Plant and subsequently tested on field in the PV Plant. The Plant (12 kWp, 12 kWh) is equipped with ABB REACT1 systems. A relevant aspect of the Plant is the Energy Management System (EMS), developed by ENEA that allows the EESS control and supervision in real time according to the selected management strategy. Self-consumption and Peak-Shaving strategies have been modeled and successfully tested.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"52 1","pages":"1592-1595"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76906583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980671
Dhurba R. Sapkota, R. Collins, P. Pradhan, P. Koirala, R. Irving, A. Phillips, R. Ellingson, M. Heben, S. Marsillac, N. Podraza
CuInSe2 (CIS) thin films ~ 500-650 Å in thickness have been deposited on c-Si substrates by two-stage thermal co-evaporation starting either from In2Se3 [according to In2Se3 + (2Cu+Se) → 2(CuInSe2)] or from Cu2-xSe [according to Cu2Se + (2In+3Se) → 2(CuInSe2)]. The design of such processes is facilitated by accurate calibrations of Cu and In2Se3 growth rates on substrate/film surfaces obtained by real time spectroscopic ellipsometry (RTSE). The two-stage deposited CIS films were also studied by RTSE to deduce (i) the evolution of film structure upon conversion of the starting In2Se3 or Cu2-xSe films to CIS via Cu+Se or In+Se co-evaporation, respectively, and (ii) the complex dielectric functions of the starting films as well as the resulting CIS. The goal is to fabricate CIS that develops large grains as early as possible during growth for high quality materials in tandem solar cell applications. Results indicate that by depositing Cu2-xSe in the first stage and exposing the film to In+Se flux in the second stage [as in the third stage of a three-stage CIS process] well-defined bandgap critical points with no detectable subgap absorption are noted in films as thin as 650 Å.
{"title":"Structural and Optical Properties of Two-Stage CuInSe2 Thin Films Studied by Real Time Spectroscopic Ellipsometry","authors":"Dhurba R. Sapkota, R. Collins, P. Pradhan, P. Koirala, R. Irving, A. Phillips, R. Ellingson, M. Heben, S. Marsillac, N. Podraza","doi":"10.1109/PVSC40753.2019.8980671","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980671","url":null,"abstract":"CuInSe<inf>2</inf> (CIS) thin films ~ 500-650 Å in thickness have been deposited on c-Si substrates by two-stage thermal co-evaporation starting either from In<inf>2</inf>Se<inf>3</inf> [according to In<inf>2</inf>Se<inf>3</inf> + (2Cu+Se) → 2(CuInSe<inf>2</inf>)] or from Cu<inf>2-x</inf>Se [according to Cu<inf>2</inf>Se + (2In+3Se) → 2(CuInSe<inf>2</inf>)]. The design of such processes is facilitated by accurate calibrations of Cu and In<inf>2</inf>Se<inf>3</inf> growth rates on substrate/film surfaces obtained by real time spectroscopic ellipsometry (RTSE). The two-stage deposited CIS films were also studied by RTSE to deduce (i) the evolution of film structure upon conversion of the starting In<inf>2</inf>Se<inf>3</inf> or Cu<inf>2-x</inf>Se films to CIS via Cu+Se or In+Se co-evaporation, respectively, and (ii) the complex dielectric functions of the starting films as well as the resulting CIS. The goal is to fabricate CIS that develops large grains as early as possible during growth for high quality materials in tandem solar cell applications. Results indicate that by depositing Cu<inf>2-x</inf>Se in the first stage and exposing the film to In+Se flux in the second stage [as in the third stage of a three-stage CIS process] well-defined bandgap critical points with no detectable subgap absorption are noted in films as thin as 650 Å.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"0943-0948"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85459694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8981376
R. Awni, A. Phillips, M. Heben, R. Ellingson, Jian V. Li, Yanfa Yan, Dengbing Li, Zhaoning Song, S. Bista, Mohammed A. Razooqi, C. Grice, Lei Chen, Geethika K. Liyanage, Chongwen Li
The performance of Cadmium telluride (CdTe) solar cell devices is limited by the properties of front and back interfaces as well as the absorber layer, which can be influenced by the fabrication atmosphere. In this work, we report a detailed study of electrical properties of ZnMgO (ZMO)/CdTe and cadmium sulfide (CdS)/CdTe solar cells with the cadmium chloride (CdCl2) treatment performed in different atmospheres using temperature-dependent impedance spectroscopy and capacitance – voltage measurements. An equivalent circuit model consisting of two serial combinations of the front and back junctions is employed to fit the complex impedance spectra of devices measured in dark. Fitted data from equivalent circuit provides the value of each element, from which the bulk conductivity, back contact barrier height, as well as spatial inhomogeneities within the cell are extracted. Impedance spectroscopy analysis shows that there are negative and positive effects of back surface treatment in oxygen free ambient on device performance. For oxygen-free treatment, an obvious increase in the bulk conductivity is observed, suggesting an increased copper doping in the device. Additionally, ZMO devices show less junction inhomogeneity. All these improvements lead to better device performance of ZMO/CdTe solar cells.
{"title":"Effects of Fabrication Atmosphere on Bulk and Back Interface Defects of CdTe Solar Cells with CdS and MgZnO Buffers","authors":"R. Awni, A. Phillips, M. Heben, R. Ellingson, Jian V. Li, Yanfa Yan, Dengbing Li, Zhaoning Song, S. Bista, Mohammed A. Razooqi, C. Grice, Lei Chen, Geethika K. Liyanage, Chongwen Li","doi":"10.1109/PVSC40753.2019.8981376","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8981376","url":null,"abstract":"The performance of Cadmium telluride (CdTe) solar cell devices is limited by the properties of front and back interfaces as well as the absorber layer, which can be influenced by the fabrication atmosphere. In this work, we report a detailed study of electrical properties of ZnMgO (ZMO)/CdTe and cadmium sulfide (CdS)/CdTe solar cells with the cadmium chloride (CdCl2) treatment performed in different atmospheres using temperature-dependent impedance spectroscopy and capacitance – voltage measurements. An equivalent circuit model consisting of two serial combinations of the front and back junctions is employed to fit the complex impedance spectra of devices measured in dark. Fitted data from equivalent circuit provides the value of each element, from which the bulk conductivity, back contact barrier height, as well as spatial inhomogeneities within the cell are extracted. Impedance spectroscopy analysis shows that there are negative and positive effects of back surface treatment in oxygen free ambient on device performance. For oxygen-free treatment, an obvious increase in the bulk conductivity is observed, suggesting an increased copper doping in the device. Additionally, ZMO devices show less junction inhomogeneity. All these improvements lead to better device performance of ZMO/CdTe solar cells.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"39 1","pages":"0177-0181"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85689107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-06-01DOI: 10.1109/PVSC40753.2019.8980629
B. Paudyal, Anne Gerd Imenes
This paper presents an investigation of data monitoring quality and evaluation of performance degradation of four different multi-crystalline silicon (mc-Si) photovoltaic (PV) modules installed in the higher latitude conditions in southern Norway. Degradation of each module has been investigated in terms of degradation of short-circuit current (ISC), open-circuit voltage (VOC), fill factor (FF) and maximum power (PMPP). The analysis for the period of monitoring data from 2014 to 2018 show no considerable module degradation compared to the standard degradation rate of all parameters. The statistical analysis of ISC shows an average degradation of 0.17% for all modules. Spectral corrections were applied to ISC and PMPP, in addition to temperature and irradiance corrections. Among the parameters, FF and ISC show slight degradation based on the yearly average method. Infrared images were used for validation of findings, but due to the unavailability of images from the initial installation period, the image results are inconclusive. Performance ratio plots based on corrected ISC values show very stable performances over the five-year period. The results suggest that PV modules in cold conditions may undergo lower degradation compared to typical degradation rates experienced in other regions.
{"title":"Performance assessment of field deployed multi-crystalline PV modules in Nordic conditions","authors":"B. Paudyal, Anne Gerd Imenes","doi":"10.1109/PVSC40753.2019.8980629","DOIUrl":"https://doi.org/10.1109/PVSC40753.2019.8980629","url":null,"abstract":"This paper presents an investigation of data monitoring quality and evaluation of performance degradation of four different multi-crystalline silicon (mc-Si) photovoltaic (PV) modules installed in the higher latitude conditions in southern Norway. Degradation of each module has been investigated in terms of degradation of short-circuit current (ISC), open-circuit voltage (VOC), fill factor (FF) and maximum power (PMPP). The analysis for the period of monitoring data from 2014 to 2018 show no considerable module degradation compared to the standard degradation rate of all parameters. The statistical analysis of ISC shows an average degradation of 0.17% for all modules. Spectral corrections were applied to ISC and PMPP, in addition to temperature and irradiance corrections. Among the parameters, FF and ISC show slight degradation based on the yearly average method. Infrared images were used for validation of findings, but due to the unavailability of images from the initial installation period, the image results are inconclusive. Performance ratio plots based on corrected ISC values show very stable performances over the five-year period. The results suggest that PV modules in cold conditions may undergo lower degradation compared to typical degradation rates experienced in other regions.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"99 1","pages":"1377-1383"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85774623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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