Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541489
A. Forrest, M. Cataluna, M. Krakowski, G. Giannuzzi, P. Bardella
We present a model for the description of the dynamical behavior of Quantum Dot (QD) based Semiconductor Optical Amplifiers (SOAs) under injection of optical pulses. The model uses a Time Domain Traveling Wave (TDTW) approach to describe the optical field in the amplifier, and allows us to consider chirped QD materials by the inclusion of a set of rate equations modeling the occupation probability of the QD confined states in each active layer. The results of the numerical simulations are validated against experimental measurements of a two-contact chirped QD SOA with ground state emissions in the 1200 nm to 1300 nm range. When the single-pass configuration is compared to the double-pass setup, both the numerical simulations and the experimental results show that a clear improvement can be obtained with the latter configuration in terms of output power and signal amplification; for the majority of biasing conditions, the double-pass amplifier presents a gain approximately 3 dB greater than the single-pass without evident saturation of the gain and pulses broadening.
{"title":"Numerical and Experimental Characterization of Chirped Quantum Dot-based Semiconductor Optical Amplifiers","authors":"A. Forrest, M. Cataluna, M. Krakowski, G. Giannuzzi, P. Bardella","doi":"10.1109/NUSOD52207.2021.9541489","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541489","url":null,"abstract":"We present a model for the description of the dynamical behavior of Quantum Dot (QD) based Semiconductor Optical Amplifiers (SOAs) under injection of optical pulses. The model uses a Time Domain Traveling Wave (TDTW) approach to describe the optical field in the amplifier, and allows us to consider chirped QD materials by the inclusion of a set of rate equations modeling the occupation probability of the QD confined states in each active layer. The results of the numerical simulations are validated against experimental measurements of a two-contact chirped QD SOA with ground state emissions in the 1200 nm to 1300 nm range. When the single-pass configuration is compared to the double-pass setup, both the numerical simulations and the experimental results show that a clear improvement can be obtained with the latter configuration in terms of output power and signal amplification; for the majority of biasing conditions, the double-pass amplifier presents a gain approximately 3 dB greater than the single-pass without evident saturation of the gain and pulses broadening.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"105 1","pages":"17-18"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82532663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-09-13DOI: 10.1109/NUSOD52207.2021.9541418
N. Ćirović, A. Khalf, J. Gojanović, P. Matavulj, S. Živanović
The steady state drift-diffusion model (DDM) of organic solar cells that considers the surface recombination processes for majority and minority carriers, as well as their thermionic emission on both electrodes, is presented in this paper. When the full Robin boundary conditions (BCs) and the popular finite difference method with Schaffeter-Gummel discretization (FDSG) were applied, significant instabilities were observed when surface recombination velocities (SRVs) for majority carriers on one or both electrodes were reduced. To analyze this problem and perceive the independent impacts of electron and hole contact processes, the model was simplified by assuming a constant electric field in the device and by solving the electron and hole continuity equations separately. The stability of numerical DDM solutions obtained by the FDSG and Discontinuous Galerkin (DG) methods for three different types of BCs (Dirichlet and two mixed BCs) was examined. The DG method showed a better stability when majority carriers SRVs were reduced. The current density versus voltage (J-V) characteristic calculated by the DDM with Dirichlet BCs using the DG method was compared to the measured ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell J-V curve for the model validation.
{"title":"Current-Voltage Characteristics Simulations of Organic Solar Cells Using Discontinuous Galerkin Method","authors":"N. Ćirović, A. Khalf, J. Gojanović, P. Matavulj, S. Živanović","doi":"10.1109/NUSOD52207.2021.9541418","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541418","url":null,"abstract":"The steady state drift-diffusion model (DDM) of organic solar cells that considers the surface recombination processes for majority and minority carriers, as well as their thermionic emission on both electrodes, is presented in this paper. When the full Robin boundary conditions (BCs) and the popular finite difference method with Schaffeter-Gummel discretization (FDSG) were applied, significant instabilities were observed when surface recombination velocities (SRVs) for majority carriers on one or both electrodes were reduced. To analyze this problem and perceive the independent impacts of electron and hole contact processes, the model was simplified by assuming a constant electric field in the device and by solving the electron and hole continuity equations separately. The stability of numerical DDM solutions obtained by the FDSG and Discontinuous Galerkin (DG) methods for three different types of BCs (Dirichlet and two mixed BCs) was examined. The DG method showed a better stability when majority carriers SRVs were reduced. The current density versus voltage (J-V) characteristic calculated by the DDM with Dirichlet BCs using the DG method was compared to the measured ITO/PEDOT:PSS/P3HT:PCBM/Al solar cell J-V curve for the model validation.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"12 1","pages":"57-58"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88384174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_0004
{"title":"Semiconductor Laser — II","authors":"","doi":"10.1142/9789813236707_0004","DOIUrl":"https://doi.org/10.1142/9789813236707_0004","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80412386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_0006
Philippe Mangeot Ceadsmdapnia, Katsushi Arisaka Ucla, T. Patzak
{"title":"Photodetectors","authors":"Philippe Mangeot Ceadsmdapnia, Katsushi Arisaka Ucla, T. Patzak","doi":"10.1142/9789813236707_0006","DOIUrl":"https://doi.org/10.1142/9789813236707_0006","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83348150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_bmatter
{"title":"BACK MATTER","authors":"","doi":"10.1142/9789813236707_bmatter","DOIUrl":"https://doi.org/10.1142/9789813236707_bmatter","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76745992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_0009
{"title":"Optical Fiber and Fiber-Based Devices","authors":"","doi":"10.1142/9789813236707_0009","DOIUrl":"https://doi.org/10.1142/9789813236707_0009","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73077189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_0005
Nicolas, F. Jaeger, Farpoosh Rahmatian, H. Kato, R. James, E. Berolo
{"title":"Modulators","authors":"Nicolas, F. Jaeger, Farpoosh Rahmatian, H. Kato, R. James, E. Berolo","doi":"10.1142/9789813236707_0005","DOIUrl":"https://doi.org/10.1142/9789813236707_0005","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"14 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72588841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_fmatter
{"title":"FRONT MATTER","authors":"","doi":"10.1142/9789813236707_fmatter","DOIUrl":"https://doi.org/10.1142/9789813236707_fmatter","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81554652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-02DOI: 10.1142/9789813236707_0002
{"title":"Light Emitting Diode (LED) and Materials","authors":"","doi":"10.1142/9789813236707_0002","DOIUrl":"https://doi.org/10.1142/9789813236707_0002","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2018-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86165945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-07-11DOI: 10.1109/NUSOD.2016.7547095
M. Maur, A. Carlo
For a detailed understanding of solar cell operation and optimization it is necessary to know how the main performance parameters (open circuit voltage, short circuit current and fill factor) depend on material and structural parameters. In this work, we give analytic formulas for the case of solar cells consisting of a single layer absorber, derived from the drift-diffusion model under some simplifying assumptions. We provide insight into the dependency of these parameters on mobility, light intensity, contact workfunctions and recombination coefficients, and we derive simple formulas for limiting cases.
{"title":"Analytic approximations for solar cell open circuit voltage, short circuit current and fill factor","authors":"M. Maur, A. Carlo","doi":"10.1109/NUSOD.2016.7547095","DOIUrl":"https://doi.org/10.1109/NUSOD.2016.7547095","url":null,"abstract":"For a detailed understanding of solar cell operation and optimization it is necessary to know how the main performance parameters (open circuit voltage, short circuit current and fill factor) depend on material and structural parameters. In this work, we give analytic formulas for the case of solar cells consisting of a single layer absorber, derived from the drift-diffusion model under some simplifying assumptions. We provide insight into the dependency of these parameters on mobility, light intensity, contact workfunctions and recombination coefficients, and we derive simple formulas for limiting cases.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"144 1","pages":"183-184"},"PeriodicalIF":0.0,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77966126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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