Pub Date : 2014-12-01DOI: 10.1142/9789814630399_0011
N. Dutta
{"title":"Planar Waveguide Amplifiers and Lasers","authors":"N. Dutta","doi":"10.1142/9789814630399_0011","DOIUrl":"https://doi.org/10.1142/9789814630399_0011","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88208117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-30DOI: 10.1142/9789813236707_0007
仓本大, 池田昌夫, 幸田伦太郎, 大木智之, 渡边秀辉, 宫嶋孝夫, 横山弘之
The present invention provides a semiconductor optical amplifier, comprising: a laminated structure, the laminated structure successively comprising a compound semiconductor composed of GaN and having a first conductivity type first compound semiconductor layer, having a light amplification region composed of GaN compound semiconductor, and a third compound semiconductor layer composed of GaN compound semiconductor having a second conductivity type and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound The semiconductor layer. Said laminated structure having a ridge stripe structure. When each of the width of the ridge stripe structure at the light output end face and the ridge stripe structure on the light incident end face and Wout respectively Win, is satisfied Wout> Win. From the light output end face, along an axis of the semiconductor optical amplifier provided carrier non-injection region in the inner region of the laminated structure. The present invention is for greater light output, and the laser output becomes stable.
{"title":"Semiconductor Optical Amplifier","authors":"仓本大, 池田昌夫, 幸田伦太郎, 大木智之, 渡边秀辉, 宫嶋孝夫, 横山弘之","doi":"10.1142/9789813236707_0007","DOIUrl":"https://doi.org/10.1142/9789813236707_0007","url":null,"abstract":"The present invention provides a semiconductor optical amplifier, comprising: a laminated structure, the laminated structure successively comprising a compound semiconductor composed of GaN and having a first conductivity type first compound semiconductor layer, having a light amplification region composed of GaN compound semiconductor, and a third compound semiconductor layer composed of GaN compound semiconductor having a second conductivity type and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound The semiconductor layer. Said laminated structure having a ridge stripe structure. When each of the width of the ridge stripe structure at the light output end face and the ridge stripe structure on the light incident end face and Wout respectively Win, is satisfied Wout> Win. From the light output end face, along an axis of the semiconductor optical amplifier provided carrier non-injection region in the inner region of the laminated structure. The present invention is for greater light output, and the laser output becomes stable.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"62 2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2011-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80872805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595671
K. Pimenov, C. Watson, Y. Logvin, V. Tolstikhin, Fang Wu
A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is developed and used to verify an ability to control the complex coupling resulting in a single-frequency lasing by manipulating the grating shape.
{"title":"Analysis of high-order surface etched gratings for longitudinal mode selection in DFB lasers","authors":"K. Pimenov, C. Watson, Y. Logvin, V. Tolstikhin, Fang Wu","doi":"10.1109/NUSOD.2010.5595671","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595671","url":null,"abstract":"A model to analyze longitudinal mode selection in high-order laterally coupled DFB lasers is developed and used to verify an ability to control the complex coupling resulting in a single-frequency lasing by manipulating the grating shape.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"49-50"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88909021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595666
Theerapong Puangmali, M. Califano, P. Harrison
We present an atomistic pseudopotential study of the electronic and optical properties of InAs quantum dots and nanorods as a function of increasing diameter and aspect ratio. As the aspect ratio increases, energy levels cross in both conduction and valence bands, reflecting their different dependence on confinement along a specific direction. Unlike in CdSe and InP quantum rods, however, the position of the crossover between highest occupied molecular orbitals with different symmetries is found to be size-dependent and the value of the aspect ratio at the crossing to increase with the rod diameter. The level crossings at the top of the valence band are crucial to explain the evolution with elongation of all optical properties in these systems. A common monotonic behaviour of band gap, Stokes shift, degree of linear polarization and radiative lifetime, is closely linked to the variation with aspect ratio of the electronic structure of the nanocrystal valence band edge.
{"title":"Pseudopotential study of electronic and optical properties of InAs semiconductor nanostructures","authors":"Theerapong Puangmali, M. Califano, P. Harrison","doi":"10.1109/NUSOD.2010.5595666","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595666","url":null,"abstract":"We present an atomistic pseudopotential study of the electronic and optical properties of InAs quantum dots and nanorods as a function of increasing diameter and aspect ratio. As the aspect ratio increases, energy levels cross in both conduction and valence bands, reflecting their different dependence on confinement along a specific direction. Unlike in CdSe and InP quantum rods, however, the position of the crossover between highest occupied molecular orbitals with different symmetries is found to be size-dependent and the value of the aspect ratio at the crossing to increase with the rod diameter. The level crossings at the top of the valence band are crucial to explain the evolution with elongation of all optical properties in these systems. A common monotonic behaviour of band gap, Stokes shift, degree of linear polarization and radiative lifetime, is closely linked to the variation with aspect ratio of the electronic structure of the nanocrystal valence band edge.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"26 1","pages":"63-64"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90509223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595689
L. Cheng, Y. Sheng, C. Xia, Wei Lu, M. Lestrade, Zi-Qiang Li, Zhanming Li
LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the other hand, without regard to PC, threshold voltage and current are lowered, while laser characteristic temperature is enhanced, which indicates that PC acts as a negative role for laser performance.
{"title":"Effects of polarization charge in GaN-based blue laser diodes (LD)","authors":"L. Cheng, Y. Sheng, C. Xia, Wei Lu, M. Lestrade, Zi-Qiang Li, Zhanming Li","doi":"10.1109/NUSOD.2010.5595689","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595689","url":null,"abstract":"LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the other hand, without regard to PC, threshold voltage and current are lowered, while laser characteristic temperature is enhanced, which indicates that PC acts as a negative role for laser performance.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"88 1","pages":"13-14"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75495698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595642
Qiugui Zhou, Han-din Liu, D. Mcintosh, Chong Hu, J. Campbell
The breakdown probability and timing jitter of silicon carbide single-photon avalanche diodes were simulated with a random path length Monte-Carlo model. The results are in good agreement with the measured device characteristics.
{"title":"Simulation of Geiger mode silicon carbide avalanche photodiode","authors":"Qiugui Zhou, Han-din Liu, D. Mcintosh, Chong Hu, J. Campbell","doi":"10.1109/NUSOD.2010.5595642","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595642","url":null,"abstract":"The breakdown probability and timing jitter of silicon carbide single-photon avalanche diodes were simulated with a random path length Monte-Carlo model. The results are in good agreement with the measured device characteristics.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"49 1","pages":"111-112"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90508366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595670
Cun-Zheng Ning, D. B. Li, K. Ding, H. Wang, R. B. Liu, M. Hill, R. Noetzel, Mk Meint Smit
We present recent results on modeling, fabrication, and characterization of semiconductor nanolasers based on semiconductor-metal core-shell waveguides. In particular, results of lasers with a sub-diffraction-limit thickness will be presented under electrical injection.
{"title":"Semiconductor plasmonic nanolasers","authors":"Cun-Zheng Ning, D. B. Li, K. Ding, H. Wang, R. B. Liu, M. Hill, R. Noetzel, Mk Meint Smit","doi":"10.1109/NUSOD.2010.5595670","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595670","url":null,"abstract":"We present recent results on modeling, fabrication, and characterization of semiconductor nanolasers based on semiconductor-metal core-shell waveguides. In particular, results of lasers with a sub-diffraction-limit thickness will be presented under electrical injection.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"501 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80051007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595684
M. Moresco, F. Bertazzi, E. Bellotti
A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.
{"title":"A Full-Band Monte Carlo study of gain, bandwidth and noise of GaN avalanche photodiodes","authors":"M. Moresco, F. Bertazzi, E. Bellotti","doi":"10.1109/NUSOD.2010.5595684","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595684","url":null,"abstract":"A growing number of system applications are increasingly demanding high speed, low noise, and high sensitivity UV detectors. GaN avalanche photodiodes (APDs) are prime candidates to become the device of choice in this area. This work presents a theoretical analysis of the performance of GaN APDs using Full Band Monte Carlo simulation. A study of the multiplication gain, noise and bandwidth is presented in this paper. The numerical results are in good agreement with experimental data available in literature.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"43 1","pages":"27-28"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85628150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595648
N. Guo, W. D. Hu, X. Chen, C. Meng, Y. Lv, W. Lu
The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.
{"title":"Numerical analysis of mid-wavelength InSb infrared focal plane arrays","authors":"N. Guo, W. D. Hu, X. Chen, C. Meng, Y. Lv, W. Lu","doi":"10.1109/NUSOD.2010.5595648","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595648","url":null,"abstract":"The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"35 1","pages":"99-100"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87317410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-10-07DOI: 10.1109/NUSOD.2010.5595639
Minghui Han, Zongfu Yu, S. Fan
In this talk we demonstrate that when using the finite-difference time-domain simulations to study an interested photonic device, the dispersive electric permittivity of an involved medium can be modeled with the complex-conjugate pole-residue pairs very effectively. The theoretical foundation of the method is presented first, followed by a recent application example of simulating the single-molecule fluorescence enhancement by a gold bowtie nanoantenna.
{"title":"Efficient treatment of dispersive electric permittivity in finite-difference time-domain simulations of advanced photonic devices","authors":"Minghui Han, Zongfu Yu, S. Fan","doi":"10.1109/NUSOD.2010.5595639","DOIUrl":"https://doi.org/10.1109/NUSOD.2010.5595639","url":null,"abstract":"In this talk we demonstrate that when using the finite-difference time-domain simulations to study an interested photonic device, the dispersive electric permittivity of an involved medium can be modeled with the complex-conjugate pole-residue pairs very effectively. The theoretical foundation of the method is presented first, followed by a recent application example of simulating the single-molecule fluorescence enhancement by a gold bowtie nanoantenna.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"15 1","pages":"113-114"},"PeriodicalIF":0.0,"publicationDate":"2010-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84430434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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