Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223846
Pingyang He, Jie Xu, Dixian Zhao
This paper presents a W-band rectenna unit, which incorporates an optimized CMOS switching rectifier and a print tapered slot antenna. Based on the analysis of the operation principle of the switching rectifier, this paper proposes an optimized structure of the switching rectifier and the body-diode effect (BDE) to improve reliability and power conversion efficiency (PCE). Besides, a high-gain W-band antipodal linearly tapered slot antenna (ALTSA) is implemented on PCB to improve the overall efficiency. The switching rectifier achieves a peak PCE of 45.8% at 94 GHz with improved reliability. The overall PCE of the rectenna unit up to 25% is achieved with 5.6 mW output dc power under 90 mW/cm2 incident power density. The proposed rectifier and rectenna achieve the highest PCE among recently reported W-band rectifiers and rectennas with different technologies
{"title":"A W-Band Rectenna Using On-Chip CMOS Switching Rectifier and On-PCB Tapered Slot Antenna Achieving 25% Effective-Power-Conversion Efficiency for Wireless Power Transfer","authors":"Pingyang He, Jie Xu, Dixian Zhao","doi":"10.1109/IMS30576.2020.9223846","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223846","url":null,"abstract":"This paper presents a W-band rectenna unit, which incorporates an optimized CMOS switching rectifier and a print tapered slot antenna. Based on the analysis of the operation principle of the switching rectifier, this paper proposes an optimized structure of the switching rectifier and the body-diode effect (BDE) to improve reliability and power conversion efficiency (PCE). Besides, a high-gain W-band antipodal linearly tapered slot antenna (ALTSA) is implemented on PCB to improve the overall efficiency. The switching rectifier achieves a peak PCE of 45.8% at 94 GHz with improved reliability. The overall PCE of the rectenna unit up to 25% is achieved with 5.6 mW output dc power under 90 mW/cm2 incident power density. The proposed rectifier and rectenna achieve the highest PCE among recently reported W-band rectifiers and rectennas with different technologies","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"49 1","pages":"1055-1058"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73607708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223865
E. Cha, N. Wadefalk, G. Moschetti, A. Pourkabirian, J. Stenarson, J. Grahn
This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 µW. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.
{"title":"A 300-µW Cryogenic HEMT LNA for Quantum Computing","authors":"E. Cha, N. Wadefalk, G. Moschetti, A. Pourkabirian, J. Stenarson, J. Grahn","doi":"10.1109/IMS30576.2020.9223865","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223865","url":null,"abstract":"This paper reports on ultra-low power 4–8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 µW. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"1299-1302"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74768239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223879
Yun-Rei Ho, Chin-Lung Yang
This paper proposed a wearable throat vibration system using a microwave sensor. Compared with millimeterwave measurement systems, a simple split-ring resonator can clearly detect and evaluate vocal fold vibration in the industrial, scientific and medical band. Higher harmonics can still be identified and quantified. A high-sensitivity microwave split-ring resonator has a sharp resonance response corresponding to the variation of the electrical fields timely in the near field to detect throat vibration. The use of amplitude modulation can be detected using an envelope detector at low cost and sensitively senses details of the vibration from vocal fold. Finally, the actual measurement results prove that the microwave sensor can measure approximately eleventh harmonics.
{"title":"A Wearable Throat Vibration Microwave Sensor Based on Split-Ring Resonator for Harmonics Detection","authors":"Yun-Rei Ho, Chin-Lung Yang","doi":"10.1109/IMS30576.2020.9223879","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223879","url":null,"abstract":"This paper proposed a wearable throat vibration system using a microwave sensor. Compared with millimeterwave measurement systems, a simple split-ring resonator can clearly detect and evaluate vocal fold vibration in the industrial, scientific and medical band. Higher harmonics can still be identified and quantified. A high-sensitivity microwave split-ring resonator has a sharp resonance response corresponding to the variation of the electrical fields timely in the near field to detect throat vibration. The use of amplitude modulation can be detected using an envelope detector at low cost and sensitively senses details of the vibration from vocal fold. Finally, the actual measurement results prove that the microwave sensor can measure approximately eleventh harmonics.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"603 1","pages":"504-507"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77401128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223887
Ting Zheng, Paul K. Jo, Sreejith Kochupurackal Rajan, M. Bakir
A polylithic integration technology is demonstrated for seamless stitching of RF and digital chiplets. In this technology, stitch-chips with compressible microinterconnects (CMIs) are used for low-loss and dense interconnection between chiplets. A testbed using fused-silica stitch-chips with integrated CMIs is demonstrated including modeling, fabrication, assembly, and characterization. A 500 µm-long stitch-chip signal link is measured to have less than 0.4 dB insertion loss up to 30 GHz. A simulated eye diagram for 1000 µm-long stitch-chip signal link has a clear opening at 50 Gbps data rate. Moreover, the S-parameters of the CMIs are extracted from this testbed and show less than 0.17 dB insertion loss up to 30 GHz. Benchmarking to silicon interposer based interconnection is also reported.
{"title":"Polylithic Integration for RF/MM-Wave Chiplets using Stitch-Chips: Modeling, Fabrication, and Characterization","authors":"Ting Zheng, Paul K. Jo, Sreejith Kochupurackal Rajan, M. Bakir","doi":"10.1109/IMS30576.2020.9223887","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223887","url":null,"abstract":"A polylithic integration technology is demonstrated for seamless stitching of RF and digital chiplets. In this technology, stitch-chips with compressible microinterconnects (CMIs) are used for low-loss and dense interconnection between chiplets. A testbed using fused-silica stitch-chips with integrated CMIs is demonstrated including modeling, fabrication, assembly, and characterization. A 500 µm-long stitch-chip signal link is measured to have less than 0.4 dB insertion loss up to 30 GHz. A simulated eye diagram for 1000 µm-long stitch-chip signal link has a clear opening at 50 Gbps data rate. Moreover, the S-parameters of the CMIs are extracted from this testbed and show less than 0.17 dB insertion loss up to 30 GHz. Benchmarking to silicon interposer based interconnection is also reported.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"30 1","pages":"1035-1038"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77932725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223994
A. Parker
An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.
{"title":"GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications","authors":"A. Parker","doi":"10.1109/IMS30576.2020.9223994","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223994","url":null,"abstract":"An explicit energy-based expression for HEMT channel charge is proposed. The expression is a compact formulation that is superior for design and simulation tools. As an advancement over existing approaches, the new expression offers the well-behaved high-order linearity that is critical for wireless applications.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"424-427"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79694287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224114
A. Hamani, A. Siligaris, B. Blampey, C. Dehos, J. G. Gonzalez Jimenez
In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm2.
{"title":"A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm","authors":"A. Hamani, A. Siligaris, B. Blampey, C. Dehos, J. G. Gonzalez Jimenez","doi":"10.1109/IMS30576.2020.9224114","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224114","url":null,"abstract":"In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm2.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"51 1","pages":"197-200"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79996771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224080
M. Weiß, C. Friesicke, R. Quay, O. Ambacher
The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.
{"title":"A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation","authors":"M. Weiß, C. Friesicke, R. Quay, O. Ambacher","doi":"10.1109/IMS30576.2020.9224080","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224080","url":null,"abstract":"The RF-power digital-to-analog converter (DAC) presented here provides RF-signals in the gigabit regime with voltage swings up to 8.32 V, suitable to drive subsequent single-stage microwave gallium nitride (GaN) power amplifer for sub-six frequencies. A current-steering architecture is driven by a custom algorithm to provide a programmable high output current, up to 250 mA, to a capacitive load such as the capacitive input impedance of an single-stage GaN power amplifier. This architecture provides data rates up to 32 Gb/s with an custom encoding, while the output voltage swing at the load capacitance is higher than 5 Vpp. Therefore, slew rates of up to 76 V/ns can be established.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"37 1","pages":"952-955"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81117540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223956
I. Krivorotov, E. Montoya, Amanatullah Khan, A. Slavin, Mingzhong Wu
The discovery of interfacial Dzyaloshinskii-Moriya interaction (DMI) enables development of novel ultra-compact non-reciprocal devices for microwave signal processing. Such devices are based on control of spin waves and magneto-elastic waves by electric field and addition of ultra-thin layers of heavy metals to the devices. Here we discuss recent advances in the development of such systems, which can be used for implementation of on-chip non-reciprocal microwave devices.
{"title":"Novel Non-Reciprocal Microwave Spin Wave and Magneto-Elastic Wave Devices for On-Chip Signal Processing","authors":"I. Krivorotov, E. Montoya, Amanatullah Khan, A. Slavin, Mingzhong Wu","doi":"10.1109/IMS30576.2020.9223956","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223956","url":null,"abstract":"The discovery of interfacial Dzyaloshinskii-Moriya interaction (DMI) enables development of novel ultra-compact non-reciprocal devices for microwave signal processing. Such devices are based on control of spin waves and magneto-elastic waves by electric field and addition of ultra-thin layers of heavy metals to the devices. Here we discuss recent advances in the development of such systems, which can be used for implementation of on-chip non-reciprocal microwave devices.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"2 1","pages":"524-527"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81517547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223816
Xuan Ding, Hai-xia Yu, Bo Yu, Zhiwei Xu, Q. Gu
This paper presents a G-band quadrature voltage-controlled oscillator (QVCO) enabled by a superharmonic injection technique. This technique ensures differential phases at the common mode tail current source nodes of two differential oscillators, which are then enforced to generate quadrature outputs. It achieves a maximum output power of -1.54 dBm with the efficiency of 3.2% and the tuning range (TR) from 149.3 GHz to 152.4 GHz. The measured phase noise (PN) is -91.9 dBc/Hz at 1 MHz offset. The IQ outputs are down-converted by an on-chip mixer for phase and amplitude accuracy measurement. The measured I/Q phase mismatch is less than 1.5° and amplitude mismatch of less than 0.33 dB over the operating frequency range. The QVCO is implemented in a 28 nm CMOS process, occupying 0.028 mm2 chip area.
{"title":"A Superharmonic Injection based G-band Quadrature VCO in CMOS","authors":"Xuan Ding, Hai-xia Yu, Bo Yu, Zhiwei Xu, Q. Gu","doi":"10.1109/IMS30576.2020.9223816","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223816","url":null,"abstract":"This paper presents a G-band quadrature voltage-controlled oscillator (QVCO) enabled by a superharmonic injection technique. This technique ensures differential phases at the common mode tail current source nodes of two differential oscillators, which are then enforced to generate quadrature outputs. It achieves a maximum output power of -1.54 dBm with the efficiency of 3.2% and the tuning range (TR) from 149.3 GHz to 152.4 GHz. The measured phase noise (PN) is -91.9 dBc/Hz at 1 MHz offset. The IQ outputs are down-converted by an on-chip mixer for phase and amplitude accuracy measurement. The measured I/Q phase mismatch is less than 1.5° and amplitude mismatch of less than 0.33 dB over the operating frequency range. The QVCO is implemented in a 28 nm CMOS process, occupying 0.028 mm2 chip area.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"34 1","pages":"345-348"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82426999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223788
Eduardo V. P. Anjos, D. Schreurs, G. Vandenbosch, M. Geurts
This work presents a 24–30 GHz phase-shifter with 0.028 mm2 of area for 5G mobile applications. The small size is achieved by employing variable-phase all-pass networks, which enables the embedding of switches within all-pass networks when implementing switched-type phase-shifters. The proposed PS was implemented and manufactured using 0.25 µm BiCMOS. Measurements were performed, showing an insertion loss of 4.49 ± 0.27 dB at 27 GHz, an RMS gain error below 0.5 dB and an RMS phase error below 7° across the whole frequency band.
{"title":"A 24 - 30 GHz Ultra-Compact Phase Shifter Using All-Pass Networks for 5G User Equipment","authors":"Eduardo V. P. Anjos, D. Schreurs, G. Vandenbosch, M. Geurts","doi":"10.1109/IMS30576.2020.9223788","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223788","url":null,"abstract":"This work presents a 24–30 GHz phase-shifter with 0.028 mm2 of area for 5G mobile applications. The small size is achieved by employing variable-phase all-pass networks, which enables the embedding of switches within all-pass networks when implementing switched-type phase-shifters. The proposed PS was implemented and manufactured using 0.25 µm BiCMOS. Measurements were performed, showing an insertion loss of 4.49 ± 0.27 dB at 27 GHz, an RMS gain error below 0.5 dB and an RMS phase error below 7° across the whole frequency band.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"64 1","pages":"217-220"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83166321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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