Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224117
Fading Zhao, D. Inserra, G. Wen
In this paper, a microwave rectifier based on a Schottky diode, a short-ended transmission line, and a microstrip coupled transmission line is proposed, resulting in a very simple and compact structure if compared with other similar designs. Furthermore, the proposed microwave rectifier is shown to be effective for achieving good impedance matching and, at the same time, it provides outstanding RF-to-DC conversion efficiency for input power as low as 1 mW. In particular the manufactured prototype exhibits a measured microwave-to-DC conversion efficiency of 62% which is a remarkable result if compared with state-of-the-art designs based on the same Avago HSMS285C or similar Schottky diodes.
{"title":"Compact and High Efficiency Rectifier Design based on Microstrip Coupled Transmission Line for Energy Harvesting","authors":"Fading Zhao, D. Inserra, G. Wen","doi":"10.1109/IMS30576.2020.9224117","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224117","url":null,"abstract":"In this paper, a microwave rectifier based on a Schottky diode, a short-ended transmission line, and a microstrip coupled transmission line is proposed, resulting in a very simple and compact structure if compared with other similar designs. Furthermore, the proposed microwave rectifier is shown to be effective for achieving good impedance matching and, at the same time, it provides outstanding RF-to-DC conversion efficiency for input power as low as 1 mW. In particular the manufactured prototype exhibits a measured microwave-to-DC conversion efficiency of 62% which is a remarkable result if compared with state-of-the-art designs based on the same Avago HSMS285C or similar Schottky diodes.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"148 1","pages":"1063-1065"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86118836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224024
Robert Sepanek, M. Hickle, M. Stuenkel
In-band full-duplex transceivers are critical to achieve the efficiency required in next generation communication systems. However, realizing this approach is difficult due to the presence of large self-interference. This paper investigates a novel approach of adaptive analog self-interference cancellation in practical systems by simultaneously leveraging key benefits of different cancellation approaches. A prototype built using a two-tap delay canceller for coarse self-interference response matching and two notch filters for fine point response adjustments demonstrates measured results. In a test scenario, this approach improves 20 dB cancellation bandwidth at 2.4 GHz from 30 MHz to 120 MHz. This is the largest reported adaptive analog isolation at this bandwidth and proves the benefits of using both time and frequency domain cancellation methods to improve bandwidth in practical communication systems.
{"title":"In-Band Full-Duplex Self-Interference Canceller Augmented with Bandstop-Configured Resonators","authors":"Robert Sepanek, M. Hickle, M. Stuenkel","doi":"10.1109/IMS30576.2020.9224024","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224024","url":null,"abstract":"In-band full-duplex transceivers are critical to achieve the efficiency required in next generation communication systems. However, realizing this approach is difficult due to the presence of large self-interference. This paper investigates a novel approach of adaptive analog self-interference cancellation in practical systems by simultaneously leveraging key benefits of different cancellation approaches. A prototype built using a two-tap delay canceller for coarse self-interference response matching and two notch filters for fine point response adjustments demonstrates measured results. In a test scenario, this approach improves 20 dB cancellation bandwidth at 2.4 GHz from 30 MHz to 120 MHz. This is the largest reported adaptive analog isolation at this bandwidth and proves the benefits of using both time and frequency domain cancellation methods to improve bandwidth in practical communication systems.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"21 1","pages":"1199-1202"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84690065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223802
P. Tomé, Filipe M. Barradas, L. Nunes, João L. Gomes, T. Cunha, J. Pedro
In this paper we propose an experimental method for the characterization and extraction of the time constants associated with the charge capture and emission processes of electron-trapping phenomena observed in radio-frequency (RF) power amplifiers (PAs) based on high-electron-mobility transistors (HEMTs). The method consists in the measurement of the transient response of a GaN HEMT-based PA to a series of large-signal two-tone RF excitations with increasing frequency separation, and the successive tracking of the gradual self-biasing experienced by the PA. With little requirements in terms of instrumentation and with applicability to fully assembled PAs, this simple method provides meaningful information on the dynamics of electron trapping close to the actual operating conditions of a GaN HEMT-based PA.
{"title":"A Transient Two-Tone RF Method for the Characterization of Electron Trapping Capture and Emission Dynamics in GaN HEMTs","authors":"P. Tomé, Filipe M. Barradas, L. Nunes, João L. Gomes, T. Cunha, J. Pedro","doi":"10.1109/IMS30576.2020.9223802","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223802","url":null,"abstract":"In this paper we propose an experimental method for the characterization and extraction of the time constants associated with the charge capture and emission processes of electron-trapping phenomena observed in radio-frequency (RF) power amplifiers (PAs) based on high-electron-mobility transistors (HEMTs). The method consists in the measurement of the transient response of a GaN HEMT-based PA to a series of large-signal two-tone RF excitations with increasing frequency separation, and the successive tracking of the gradual self-biasing experienced by the PA. With little requirements in terms of instrumentation and with applicability to fully assembled PAs, this simple method provides meaningful information on the dynamics of electron trapping close to the actual operating conditions of a GaN HEMT-based PA.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"58 1","pages":"428-431"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84847256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223963
Neda Nourshamsi, Cory Hilton, Stavros Vakalis, J. Nanzer
A pulsed radar system and harmonic tag design for the detection of harmonic micro-Doppler signatures in cluttered environments is presented. While radio-frequency identification research has focused heavily on detection, this work uniquely focuses on measuring the tag motion based on harmonic frequency shifts. The tag retransmits the incident signal at a harmonic frequency, enabling the harmonic radar receiver to detect the frequency shift without the presence of clutter, which is confined to the fundamental frequency band. A new harmonic tag based on a wire dipole, diode, and wire-based reactive components is presented, which operates at 2.51 and 5.02 GHz frequencies. A pulsed harmonic radar is offered that is able to achieve measurements at greater distance than continuous-wave systems. We present time-frequency responses of the tag movement at a distance of 1 m to demonstrate the ability to detect object motion based on the frequency shift of the harmonic micro-Doppler response.
{"title":"Harmonic Micro-Doppler Detection Using Passive RF Tags and Pulsed Microwave Harmonic Radar","authors":"Neda Nourshamsi, Cory Hilton, Stavros Vakalis, J. Nanzer","doi":"10.1109/IMS30576.2020.9223963","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223963","url":null,"abstract":"A pulsed radar system and harmonic tag design for the detection of harmonic micro-Doppler signatures in cluttered environments is presented. While radio-frequency identification research has focused heavily on detection, this work uniquely focuses on measuring the tag motion based on harmonic frequency shifts. The tag retransmits the incident signal at a harmonic frequency, enabling the harmonic radar receiver to detect the frequency shift without the presence of clutter, which is confined to the fundamental frequency band. A new harmonic tag based on a wire dipole, diode, and wire-based reactive components is presented, which operates at 2.51 and 5.02 GHz frequencies. A pulsed harmonic radar is offered that is able to achieve measurements at greater distance than continuous-wave systems. We present time-frequency responses of the tag movement at a distance of 1 m to demonstrate the ability to detect object motion based on the frequency shift of the harmonic micro-Doppler response.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"1259-1262"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89653492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223981
Geliang Yang, Rui Chen, Keping Wang
This paper presents a compact on-chip balun with a turn ratio of 1:2 for sub-6 GHz applications. Common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. The balun is fabricated by using a standard 130-nm CMOS process. The bandwidth of the proposed balun for $vert mathrm{S}_{11}vert < -10$ dB is 2.2-5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8-5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz.
{"title":"A CMOS Balun with Common Ground and Artificial Dielectric Compensation Achieving 79.5% Fractional Bandwidth and <2° Phase Imbalance","authors":"Geliang Yang, Rui Chen, Keping Wang","doi":"10.1109/IMS30576.2020.9223981","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223981","url":null,"abstract":"This paper presents a compact on-chip balun with a turn ratio of 1:2 for sub-6 GHz applications. Common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. The balun is fabricated by using a standard 130-nm CMOS process. The bandwidth of the proposed balun for $vert mathrm{S}_{11}vert < -10$ dB is 2.2-5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8-5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"46 1","pages":"1319-1322"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87353040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223806
S. Augé, A. Tamra, Lise Rigal, V. Lobjois, B. Ducommun, D. Dubuc, K. Grenier
The impact of RF radiation on the living constitutes a controversial topic, whereas wireless applications continue to grow drastically and our daily environment is surrounded of electromagnetic fields. In order to evaluate the potential impact of RF radiations even with severe RF exposures, it is important to conduct experiments with a very well controlled dosimetry and with calibrated RF exposure systems. In this paper, a miniature RF applicator, which enables to apply controlled electromagnetic fields radiation on micro-tissues, is introduced. An experimental method based on thermal measurements has been developed in such a micro-device to define the Specific Absorption Rate applied to micro-tissues depending on the applied power and the thermal increment in steady state. Due to miniature configuration of the applicator, a large range of SAR may be achieved in moderate thermal conditions.
{"title":"Experimental Dosimetry Study of a Miniature RF Applicator Dedicated to the Evaluation of Severe RF Exposure Impact on a 3D Biological Model","authors":"S. Augé, A. Tamra, Lise Rigal, V. Lobjois, B. Ducommun, D. Dubuc, K. Grenier","doi":"10.1109/IMS30576.2020.9223806","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223806","url":null,"abstract":"The impact of RF radiation on the living constitutes a controversial topic, whereas wireless applications continue to grow drastically and our daily environment is surrounded of electromagnetic fields. In order to evaluate the potential impact of RF radiations even with severe RF exposures, it is important to conduct experiments with a very well controlled dosimetry and with calibrated RF exposure systems. In this paper, a miniature RF applicator, which enables to apply controlled electromagnetic fields radiation on micro-tissues, is introduced. An experimental method based on thermal measurements has been developed in such a micro-device to define the Specific Absorption Rate applied to micro-tissues depending on the applied power and the thermal increment in steady state. Due to miniature configuration of the applicator, a large range of SAR may be achieved in moderate thermal conditions.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"42 2 1","pages":"508-511"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88175014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223889
Wei-Chih Su, Pin-Hsun Juan, De-Ming Chian, T. Horng, Chao-Kai Wen, Fu-Kang Wang
This paper presents a switched phased-array (SPA) radar that uses self-injection-locking (SIL) and digital beamforming (DBF) technologies to provide high sensitivity of vital sign detection and accurate azimuthal tracking of a mobile person. Advantageously, the complexity of RF transmission and reception in the proposed SPA radar is very low compared to the conventional phased array radar. In the experiment, a prototype SPA-SIL radar was implemented to operate in the 2.4 GHz ISM band. This radar can automatically track the azimuth angle of a subject and successfully detect his vital signs over a wide azimuth and distance range,
{"title":"Human Tracking and Vital Sign Monitoring with a Switched Phased-Array Self-Injection-Locked Radar","authors":"Wei-Chih Su, Pin-Hsun Juan, De-Ming Chian, T. Horng, Chao-Kai Wen, Fu-Kang Wang","doi":"10.1109/IMS30576.2020.9223889","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223889","url":null,"abstract":"This paper presents a switched phased-array (SPA) radar that uses self-injection-locking (SIL) and digital beamforming (DBF) technologies to provide high sensitivity of vital sign detection and accurate azimuthal tracking of a mobile person. Advantageously, the complexity of RF transmission and reception in the proposed SPA radar is very low compared to the conventional phased array radar. In the experiment, a prototype SPA-SIL radar was implemented to operate in the 2.4 GHz ISM band. This radar can automatically track the azimuth angle of a subject and successfully detect his vital signs over a wide azimuth and distance range,","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"22 1 1","pages":"659-662"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88255064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224042
Yali Zhang, B. Garcia, J. Um, B. Stadler, Rhonda R. Franklin
This paper presents a phase analysis method (PAM) in DC field domain to detect ferromagnetic resonance (FMR) properties of magnetic nanowires. The S-parameter phase is extracted, and a derivative is applied to show FMR frequencies and magnetic moment direction. A comparison between the magnitude method and PAM is made. PAM provides advantages in determining FMR frequencies for overlapped linewidths. For a two-port coplanar waveguide (CPW) test circuit, the sample placement effect is studied. The phase derivative results show consistent FMR frequencies at DC field of 0.87T for different sample placements. Similarly, three different types of nanowires, iron (Fe), cobalt (Co) and nickel (Ni) are measured and can be easily distinguished. Finally, on a one-port shorted CPW test circuit, the length effect is studied. Two nanowire chips from one sample are diced with the same width but different lengths. When compared, their FMR frequencies possess differences of 0.06T using PAM.
{"title":"A Phase Analysis Method for Ferromagnetic Resonance Characterization of Magnetic Nanowires","authors":"Yali Zhang, B. Garcia, J. Um, B. Stadler, Rhonda R. Franklin","doi":"10.1109/IMS30576.2020.9224042","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224042","url":null,"abstract":"This paper presents a phase analysis method (PAM) in DC field domain to detect ferromagnetic resonance (FMR) properties of magnetic nanowires. The S-parameter phase is extracted, and a derivative is applied to show FMR frequencies and magnetic moment direction. A comparison between the magnitude method and PAM is made. PAM provides advantages in determining FMR frequencies for overlapped linewidths. For a two-port coplanar waveguide (CPW) test circuit, the sample placement effect is studied. The phase derivative results show consistent FMR frequencies at DC field of 0.87T for different sample placements. Similarly, three different types of nanowires, iron (Fe), cobalt (Co) and nickel (Ni) are measured and can be easily distinguished. Finally, on a one-port shorted CPW test circuit, the length effect is studied. Two nanowire chips from one sample are diced with the same width but different lengths. When compared, their FMR frequencies possess differences of 0.06T using PAM.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"8 1","pages":"968-971"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86912477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223850
Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, R. Huang, K. Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan
This paper presents a single-signal-path tri-band (K/Ka/V) variable-gain low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA uses a common-gate input stage with a triple-coupling transformer (TCT) to achieve better impedance matching across three desired bands than those of prior arts and to enable the necessary gm-boosting to suppress undesired noise. Each LNA stage (except the final one) is loaded with a PMOS switched inductor carefully designed to trade off parasitic capacitances/resistances between off/on states. PMOS devices are also used in parallel with switched inductors as variable resistors to realize the variable gain functionality. Accordingly, the load quality factors can be changed to make the LNA power gain adjustable. This LNA consists of six stages and offers variable power gains from -5.5 to 29.9 dB (24 GHz), -5.5 to 32.4 dB (33 GHz), and -11.5 to 22.2 dB (50 GHz) with respective minimum noise figures of 5.63 dB, 4.55 dB, and 5.96 dB. This LNA consumes 25.6 mW from a 1-V supply and occupies 0.22 mm2 without pads in silicon area.
提出了一种采用28纳米体CMOS工艺制作的单信号路三频带(K/Ka/V)变增益低噪声放大器。该LNA使用带有三耦合变压器(TCT)的共门输入级，以实现比现有技术更好的三个所需频段的阻抗匹配，并实现必要的gm增强以抑制不希望的噪声。每个LNA级(最后一级除外)都装载了一个精心设计的PMOS开关电感，以平衡关/开状态之间的寄生电容/电阻。PMOS器件也可与开关电感并联作为可变电阻来实现可变增益功能。因此，可以改变负载质量因子，使LNA功率增益可调。该LNA由6级组成，可提供-5.5至29.9 dB (24 GHz)、-5.5至32.4 dB (33 GHz)和-11.5至22.2 dB (50 GHz)的可变功率增益，最小噪声值分别为5.63 dB、4.55 dB和5.96 dB。该LNA从1 v电源消耗25.6 mW，占地0.22 mm2，不含硅衬垫。
{"title":"A Tri (K/Ka/V)-Band Monolithic CMOS Low Noise Amplifier with Shared Signal Path and Variable Gains","authors":"Chia-Jen Liang, Ching-Wen Chiang, Jia Zhou, R. Huang, K. Wen, Mau-Chung Frank Chang, Yen-Cheng Kuan","doi":"10.1109/IMS30576.2020.9223850","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223850","url":null,"abstract":"This paper presents a single-signal-path tri-band (K/Ka/V) variable-gain low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA uses a common-gate input stage with a triple-coupling transformer (TCT) to achieve better impedance matching across three desired bands than those of prior arts and to enable the necessary gm-boosting to suppress undesired noise. Each LNA stage (except the final one) is loaded with a PMOS switched inductor carefully designed to trade off parasitic capacitances/resistances between off/on states. PMOS devices are also used in parallel with switched inductors as variable resistors to realize the variable gain functionality. Accordingly, the load quality factors can be changed to make the LNA power gain adjustable. This LNA consists of six stages and offers variable power gains from -5.5 to 29.9 dB (24 GHz), -5.5 to 32.4 dB (33 GHz), and -11.5 to 22.2 dB (50 GHz) with respective minimum noise figures of 5.63 dB, 4.55 dB, and 5.96 dB. This LNA consumes 25.6 mW from a 1-V supply and occupies 0.22 mm2 without pads in silicon area.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"333-336"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86844822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223792
Thomas R. Jones, M. Daneshmand
This paper presents the microfabrication of a miniaturized folded half-mode integrated waveguide cavity for operation at millimetre-wave frequencies in W-band. A half-mode cavity is wrapped around a middle metallization layer within its structure, effectively folding the fundamental resonance mode. Compared to standard rectangular waveguide cavity footprint, a miniaturization on the order of 91% is demonstrated. The folded half-mode integrated waveguide cavity has a measured resonance frequency of 87.3 GHz, and measured unloaded quality factor of 101. The fabrication process is completely monolithic, allowing for Integration with IC.
{"title":"Microfabrication of a Miniaturized Monolithic Folded Half-Mode Integrated Waveguide Cavity for W-Band Applications","authors":"Thomas R. Jones, M. Daneshmand","doi":"10.1109/IMS30576.2020.9223792","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223792","url":null,"abstract":"This paper presents the microfabrication of a miniaturized folded half-mode integrated waveguide cavity for operation at millimetre-wave frequencies in W-band. A half-mode cavity is wrapped around a middle metallization layer within its structure, effectively folding the fundamental resonance mode. Compared to standard rectangular waveguide cavity footprint, a miniaturization on the order of 91% is demonstrated. The folded half-mode integrated waveguide cavity has a measured resonance frequency of 87.3 GHz, and measured unloaded quality factor of 101. The fabrication process is completely monolithic, allowing for Integration with IC.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"9 1","pages":"127-130"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86207748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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