Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224022
Xurong Li, M. Jarrahi
We present a 63-pixel photoconductive terahertz focal-plane array based on arrays of plasmonic nano-antennas. The nano-antennas are designed to offer both broadband and high-sensitivity terahertz detection. A diffuser is used to efficiently focus the optical pump beam onto the active area of each pixel of the focal-plane array. The detected terahertz signal from each pixel is collected by a programmable FPGA-based readout circuit. We experimentally demonstrate more than a 60 dB signal-to-noise ratio and a 2 THz bandwidth for all of the pixels in the terahertz focal-plane array.
{"title":"A 63-Pixel Plasmonic Photoconductive Terahertz Focal-Plane Array","authors":"Xurong Li, M. Jarrahi","doi":"10.1109/IMS30576.2020.9224022","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224022","url":null,"abstract":"We present a 63-pixel photoconductive terahertz focal-plane array based on arrays of plasmonic nano-antennas. The nano-antennas are designed to offer both broadband and high-sensitivity terahertz detection. A diffuser is used to efficiently focus the optical pump beam onto the active area of each pixel of the focal-plane array. The detected terahertz signal from each pixel is collected by a programmable FPGA-based readout circuit. We experimentally demonstrate more than a 60 dB signal-to-noise ratio and a 2 THz bandwidth for all of the pixels in the terahertz focal-plane array.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"289 1","pages":"91-94"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72624780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223928
Xiaoyao Feng, Z. Chen, Jing Liang
Electromagnetic inverse problems have been traditionally solved in frequency domain. The time-reversal method has been developed to offer an alternative approach in time domain with natural time stepping computations. However, in its applications to electromagnetic source reconstruction, much work so far has not considered possible different excitation times. In this paper, the concept of entropy used in image processing is incorporated into the time-reversal process, which leads to reconstructions of not only the spatial locations but also the excitation times of the sources. Experiments are also set up for verification purposes and the proposed work may pave the way for practical applications of the time-reversal method. The effectiveness of the method is proposed to solve realistic problems in future experimental test.
{"title":"The Entropy Technique for the Time-Reversal Source Reconstruction","authors":"Xiaoyao Feng, Z. Chen, Jing Liang","doi":"10.1109/IMS30576.2020.9223928","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223928","url":null,"abstract":"Electromagnetic inverse problems have been traditionally solved in frequency domain. The time-reversal method has been developed to offer an alternative approach in time domain with natural time stepping computations. However, in its applications to electromagnetic source reconstruction, much work so far has not considered possible different excitation times. In this paper, the concept of entropy used in image processing is incorporated into the time-reversal process, which leads to reconstructions of not only the spatial locations but also the excitation times of the sources. Experiments are also set up for verification purposes and the proposed work may pave the way for practical applications of the time-reversal method. The effectiveness of the method is proposed to solve realistic problems in future experimental test.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"56 1","pages":"158-160"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84875947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223833
E. R. Srinidhi, M. Masood, T. Sharma, J. Staudinger, S. Dhar, P. Rashev, G. Tucker, F. Ghannouchi
The paper demonstrates, for the first time, a high power (200W) load modulated balanced amplifier (LMBA) targeting 5G cellular infrastructure applications. Both amplitude and phase of the injected signal applied to the control power amplifier (CPA) are configured using a dynamic phase shaping function along with a pre-distortion digital front-end. Digital baseband processing provides flexibility in varying both amplitude and phase of the injected signal to the CPA which improves efficiency and overall linearizability of the LMBA. Under real-time modulated signal excitation, excellent linearization is achieved using a segmented digital predistortion (DPD) approach applied to the balanced power amplifier (BPA) branch and a power-dependent phasing function applied to the CPA branch. The LMBA prototype implementation is carried out using NXP's 100 W gallium nitride (GaN) on silicon carbide (SiC) pre-match device in the balanced branch. Measured results achieve peak output power of 53 dBm (200 W) with 44% linearized efficiency at 8 dB back-off and corrected ACPR of -52 dBc across LTE Band-41 (~2.6 GHz).
{"title":"Digitally Assisted Load Modulated Balanced Amplifier for 200W Cellular Infrastructure Applications","authors":"E. R. Srinidhi, M. Masood, T. Sharma, J. Staudinger, S. Dhar, P. Rashev, G. Tucker, F. Ghannouchi","doi":"10.1109/IMS30576.2020.9223833","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223833","url":null,"abstract":"The paper demonstrates, for the first time, a high power (200W) load modulated balanced amplifier (LMBA) targeting 5G cellular infrastructure applications. Both amplitude and phase of the injected signal applied to the control power amplifier (CPA) are configured using a dynamic phase shaping function along with a pre-distortion digital front-end. Digital baseband processing provides flexibility in varying both amplitude and phase of the injected signal to the CPA which improves efficiency and overall linearizability of the LMBA. Under real-time modulated signal excitation, excellent linearization is achieved using a segmented digital predistortion (DPD) approach applied to the balanced power amplifier (BPA) branch and a power-dependent phasing function applied to the CPA branch. The LMBA prototype implementation is carried out using NXP's 100 W gallium nitride (GaN) on silicon carbide (SiC) pre-match device in the balanced branch. Measured results achieve peak output power of 53 dBm (200 W) with 44% linearized efficiency at 8 dB back-off and corrected ACPR of -52 dBc across LTE Band-41 (~2.6 GHz).","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"15 1","pages":"719-722"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85426186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223987
Li-Heng Zhou, X. Zhou, W. Chan, Jingzhou Pang, Derek Ho
Filtering power amplifiers (PAs) combine two functions into one circuit and 2-order cascaded structure with two transmission poles (TPs) is the most common form. Multiple TPs can extend bandwidth and minimize in-band ripple. However, more resonators are required for traditional topologies, resulting in large size with high loss. A microstrip filtering Class-F is proposed based on the couple-line multimode impedance transformer (IT) in this paper. Four TPs are created by using only a single resonator. Lengths of the drain bias stub and coupled feed line are carefully chosen to meet the requirement for Class-F operation. The fabricated multimode filtering Class-F PAs is measured at 3.6 GHz for 5G applications. Maximum gain at saturation is 12 dB with output power Pout>38.5 dBm. Maximum power added efficiency (PAE) is 63%, while the effective bandwidth is 400 MHz under the condition of PAEs > 50%.
{"title":"Integrated Filtering Class-F Power Amplifier Based on Microstrip Multimode Resonator","authors":"Li-Heng Zhou, X. Zhou, W. Chan, Jingzhou Pang, Derek Ho","doi":"10.1109/IMS30576.2020.9223987","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223987","url":null,"abstract":"Filtering power amplifiers (PAs) combine two functions into one circuit and 2-order cascaded structure with two transmission poles (TPs) is the most common form. Multiple TPs can extend bandwidth and minimize in-band ripple. However, more resonators are required for traditional topologies, resulting in large size with high loss. A microstrip filtering Class-F is proposed based on the couple-line multimode impedance transformer (IT) in this paper. Four TPs are created by using only a single resonator. Lengths of the drain bias stub and coupled feed line are carefully chosen to meet the requirement for Class-F operation. The fabricated multimode filtering Class-F PAs is measured at 3.6 GHz for 5G applications. Maximum gain at saturation is 12 dB with output power Pout>38.5 dBm. Maximum power added efficiency (PAE) is 63%, while the effective bandwidth is 400 MHz under the condition of PAEs > 50%.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"119-122"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81602093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223912
Dennis Feng, M. Vahidpour, Y. Mohan, N. Sharac, T. Whyland, Sam W. Stanwyck, Ganesh Ramachandran, M. Selvanayagam
Josephson junction based parametric amplifiers are used to read out the state of superconducting qubits with high fidelity. These amplifiers are themselves superconducting circuits operating at temperatures of tens of millikelvin. A version of this type of amplifier which has exhibited large bandwidth and saturation power is the Josephson traveling wave parametric amplifier (JTWPA). One particular JTWPA topology consists of hundreds to thousands of Josephson junctions in a transmission line configuration along with periodic phase matching resonators to increase gain. Here, we look at using a superconducting qubit fabrication process to realize this circuit To analyze the sensitivity of the JTWPA to fabrication process variation, we discuss a linear model for the circuit which takes into account unit cell to unit cell variation. To extract the measured circuit values, we use in-situ measurements of a JTWPA to compare the designed values to the realized values. Finally we discuss preliminary results realizing an example JTWPA design using a fabrication process designed for superconducting qubits.
{"title":"Design and Measurement Of A Josephson Traveling Wave Parametric Amplifier Fabricated In A Superconducting Qubit Process","authors":"Dennis Feng, M. Vahidpour, Y. Mohan, N. Sharac, T. Whyland, Sam W. Stanwyck, Ganesh Ramachandran, M. Selvanayagam","doi":"10.1109/IMS30576.2020.9223912","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223912","url":null,"abstract":"Josephson junction based parametric amplifiers are used to read out the state of superconducting qubits with high fidelity. These amplifiers are themselves superconducting circuits operating at temperatures of tens of millikelvin. A version of this type of amplifier which has exhibited large bandwidth and saturation power is the Josephson traveling wave parametric amplifier (JTWPA). One particular JTWPA topology consists of hundreds to thousands of Josephson junctions in a transmission line configuration along with periodic phase matching resonators to increase gain. Here, we look at using a superconducting qubit fabrication process to realize this circuit To analyze the sensitivity of the JTWPA to fabrication process variation, we discuss a linear model for the circuit which takes into account unit cell to unit cell variation. To extract the measured circuit values, we use in-situ measurements of a JTWPA to compare the designed values to the realized values. Finally we discuss preliminary results realizing an example JTWPA design using a fabrication process designed for superconducting qubits.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"28 1","pages":"940-943"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85497140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223876
Z. Griffith, M. Urteaga, P. Rowell, L. Tran
Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining. S21 mid-band gain is 21.0 dB and DC power dissipation (PDC) is 3.05-W. The 3-dB S21 bandwidth (BW) is between 158.5-182.8 GHz. At 170-GHz, peak Pout is 244-mW (7.5% PAE). Pout is no less than 0.20-W between 160–180 GHz and is 177-mW at 183-GHz. The 170-GHz OP1dB 1-dB gain compression is 120-mW (3.8% PAE). This PA result improves upon the prior state-of-the-art by 2.2-2.8× for peak SSPA power. The second result is a 0.14-W PA using 2-way combining. S21 mid-band gain is 23.6 dB and PDC is 1.35-W. The 3-dB S21 BW is between 161.0-184.8 GHz. At 170-GHz, peak Pout is 140-mW (9.50% PAE), and Pout is 116–140 mW (8.0-9.5% PAE) between 160–183 GHz. The 170-GHz OP1dB is 70-mW (5.1% PAE). This PA result improves upon the prior state-of-the-art by 1.4-1.6× for peak SSPA power. This work establishes new SSPA RF power, gain, and PAE performance benchmarks at 160–183 GHz operation using a 250-nm InP HBT technology.
{"title":"A 160-183 GHz 0.24-W (7.5% PAE) PA and 0.14-W (9.5% PAE) PA, High-Gain, G-band Power Amplifier MMICs in 250-nm InP HBT","authors":"Z. Griffith, M. Urteaga, P. Rowell, L. Tran","doi":"10.1109/IMS30576.2020.9223876","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223876","url":null,"abstract":"Two high-gain, high power-added-efficiency (PAE) G-band solid-state power amplifier (SSPA) MMICs operating between 160–183 GHz are reported. Both utilize an identical five-stage gain-lane, and on-chip combining of these gain-lanes satisfies the output power (Pout) objectives. The first result is a 0.24-W PA using 4-way power combining. S21 mid-band gain is 21.0 dB and DC power dissipation (PDC) is 3.05-W. The 3-dB S21 bandwidth (BW) is between 158.5-182.8 GHz. At 170-GHz, peak Pout is 244-mW (7.5% PAE). Pout is no less than 0.20-W between 160–180 GHz and is 177-mW at 183-GHz. The 170-GHz OP1dB 1-dB gain compression is 120-mW (3.8% PAE). This PA result improves upon the prior state-of-the-art by 2.2-2.8× for peak SSPA power. The second result is a 0.14-W PA using 2-way combining. S21 mid-band gain is 23.6 dB and PDC is 1.35-W. The 3-dB S21 BW is between 161.0-184.8 GHz. At 170-GHz, peak Pout is 140-mW (9.50% PAE), and Pout is 116–140 mW (8.0-9.5% PAE) between 160–183 GHz. The 170-GHz OP1dB is 70-mW (5.1% PAE). This PA result improves upon the prior state-of-the-art by 1.4-1.6× for peak SSPA power. This work establishes new SSPA RF power, gain, and PAE performance benchmarks at 160–183 GHz operation using a 250-nm InP HBT technology.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"199 1","pages":"488-491"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81780156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224106
A. Fung, L. Samoska, J. Bowen, Steven Montanez, J. Kooi, M. Soriano, C. Jacobs, R. Manthena, D. Hoppe, A. Akgiray, R. Lai, X. Mei, M. Barsky
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5–35 GHz.
{"title":"X- to Ka- Band Cryogenic LNA Module for Very Long Baseline Interferometry","authors":"A. Fung, L. Samoska, J. Bowen, Steven Montanez, J. Kooi, M. Soriano, C. Jacobs, R. Manthena, D. Hoppe, A. Akgiray, R. Lai, X. Mei, M. Barsky","doi":"10.1109/IMS30576.2020.9224106","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224106","url":null,"abstract":"We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5–35 GHz.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"65 1","pages":"189-192"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83749105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223927
R. B. Yishay, D. Elad
This paper presents a multi-standard digitally controlled variable gain amplifier (VGA) for 5G phased array transceivers, designed and fabricated in 120 nm SiGe BiCMOS process. A current steering technique is used to minimize the phase variation under different gain modes. Frequency tuning is achieved by utilizing variable artificial transmission lines, capable of shifting the peak gain frequency from 28 GHz to 39 GHz in discreet steps to obtain multi-band operation with minimal footprint. The proposed VGA achieves more than 12.5 dB measured peak gain, gain tuning range of 18 dB, gain resolution of less than 1 dB with <4.5° phase variation and OP1dB > 4.5 dBm. The IC occupies area of only 0.08 mm2 and consumes 45 mW.
{"title":"A Compact Frequency-Tunable VGA for Multi-Standard 5G Transceivers","authors":"R. B. Yishay, D. Elad","doi":"10.1109/IMS30576.2020.9223927","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223927","url":null,"abstract":"This paper presents a multi-standard digitally controlled variable gain amplifier (VGA) for 5G phased array transceivers, designed and fabricated in 120 nm SiGe BiCMOS process. A current steering technique is used to minimize the phase variation under different gain modes. Frequency tuning is achieved by utilizing variable artificial transmission lines, capable of shifting the peak gain frequency from 28 GHz to 39 GHz in discreet steps to obtain multi-band operation with minimal footprint. The proposed VGA achieves more than 12.5 dB measured peak gain, gain tuning range of 18 dB, gain resolution of less than 1 dB with <4.5° phase variation and OP1dB > 4.5 dBm. The IC occupies area of only 0.08 mm2 and consumes 45 mW.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"46 1","pages":"325-328"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82596765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223799
M. Koohi, Wenhao Peng, A. Mortazawi
An intrinsically switchable balanced lattice-ladder ferroelectric thin film bulk acoustic resonator (FBAR) filter is presented for the first time. A 1.5 stage balanced ladder-type filter and a 2-pole lattice-type filter with a center frequency at 2 GHz are first designed through the image parameter method. Subsequently, the filters are connected in series to form a ladder-lattice filter and fabricated based on ferroelectric barium strontium titanate (BST) FBARs. The measured two-section balanced filter provides a high out-of-band rejection and OFF-state isolation levels of more than 40 dB with a sharp roll-off.
{"title":"An Intrinsically Switchable Balanced Ferroelectric FBAR Filter at 2 GHz","authors":"M. Koohi, Wenhao Peng, A. Mortazawi","doi":"10.1109/IMS30576.2020.9223799","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223799","url":null,"abstract":"An intrinsically switchable balanced lattice-ladder ferroelectric thin film bulk acoustic resonator (FBAR) filter is presented for the first time. A 1.5 stage balanced ladder-type filter and a 2-pole lattice-type filter with a center frequency at 2 GHz are first designed through the image parameter method. Subsequently, the filters are connected in series to form a ladder-lattice filter and fabricated based on ferroelectric barium strontium titanate (BST) FBARs. The measured two-section balanced filter provides a high out-of-band rejection and OFF-state isolation levels of more than 40 dB with a sharp roll-off.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"84 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83068027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224004
S. Pulipati, V. Ariyarathna, Ashira L. Jayaweera, C. Edussooriya, C. Wijenayake, L. Belostotski, A. Madanayake
This paper describes a technique for de-embedding electromagnetic mutual coupling effects between nearest neighbors of a ULA receiver. Measured S-parameters across a range of frequencies of interest are used in a closed-form mathematical model that relates measured S-parameters, measured LNA reflection coefficients, and transmission line parameters to digital beamformer design equations, such that the beam shape distortions arising from mutual coupling can be compensated in the DSP algorithm. A 5.8 GHz 32-element receiver array with custom receivers and 32-channel Xilinx Virtex-6 Sx35 FPGA based DSP system implementing a real-time complex-valued Frost beamformer operating at IF is proposed to show the benefits of de-embedding mutual coupling for far-field side-lobe suppression. The worst-case side-lobe level is reduced by 11.2 dB, and the average side-lobe level is reduced by 5.2 dB, for a 20 MHz IF signal.
{"title":"FPGA-Based 2-D FIR Frost Beamformers with Digital Mutual Coupling Compensation","authors":"S. Pulipati, V. Ariyarathna, Ashira L. Jayaweera, C. Edussooriya, C. Wijenayake, L. Belostotski, A. Madanayake","doi":"10.1109/IMS30576.2020.9224004","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224004","url":null,"abstract":"This paper describes a technique for de-embedding electromagnetic mutual coupling effects between nearest neighbors of a ULA receiver. Measured S-parameters across a range of frequencies of interest are used in a closed-form mathematical model that relates measured S-parameters, measured LNA reflection coefficients, and transmission line parameters to digital beamformer design equations, such that the beam shape distortions arising from mutual coupling can be compensated in the DSP algorithm. A 5.8 GHz 32-element receiver array with custom receivers and 32-channel Xilinx Virtex-6 Sx35 FPGA based DSP system implementing a real-time complex-valued Frost beamformer operating at IF is proposed to show the benefits of de-embedding mutual coupling for far-field side-lobe suppression. The worst-case side-lobe level is reduced by 11.2 dB, and the average side-lobe level is reduced by 5.2 dB, for a 20 MHz IF signal.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"248 1","pages":"1077-1080"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75802524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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