Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224116
A. Eid, J. Hester, M. Tentzeris
Backscatter front-ends are generally praised for their sub-µW power consumptions. However, this power consumption ends up being dwarfed by that of its modulating baseband circuitry. Furthermore, they are plagued by short reading ranges. The work reported in this paper demonstrates, for the first time, the use of a combined single-element oscillator/reflection-amplifier architecture. This remarkable system combines two critical features for range extension-the highest reflection-amplification RFID gain of the literature (48 dB) and higher-than-MHz sub-carrier offset frequency-while displaying a power consumption lower than that of any comparable commercial (amplifier-less) oscillator: 20 µW. This is achieved by using a tunnel-diode, whose properties as a baseband-oscillator and a 5.8 GHz reflection-amplifier are analyzed, before both are combined. This highly voltage-sensitive system is synergistically associated with a first-of-a-kind self-regulating tunnel diode-based rectifier to propose a fully-tunnel-diodes-based passive RFID design which could enable the future of practical km-range RFIDs.
{"title":"A 5.8 GHz Fully-Tunnel-Diodes-Based 20 µW, 88mV, and 48 dB-Gain Fully-Passive Backscattering RFID Tag","authors":"A. Eid, J. Hester, M. Tentzeris","doi":"10.1109/IMS30576.2020.9224116","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224116","url":null,"abstract":"Backscatter front-ends are generally praised for their sub-µW power consumptions. However, this power consumption ends up being dwarfed by that of its modulating baseband circuitry. Furthermore, they are plagued by short reading ranges. The work reported in this paper demonstrates, for the first time, the use of a combined single-element oscillator/reflection-amplifier architecture. This remarkable system combines two critical features for range extension-the highest reflection-amplification RFID gain of the literature (48 dB) and higher-than-MHz sub-carrier offset frequency-while displaying a power consumption lower than that of any comparable commercial (amplifier-less) oscillator: 20 µW. This is achieved by using a tunnel-diode, whose properties as a baseband-oscillator and a 5.8 GHz reflection-amplifier are analyzed, before both are combined. This highly voltage-sensitive system is synergistically associated with a first-of-a-kind self-regulating tunnel diode-based rectifier to propose a fully-tunnel-diodes-based passive RFID design which could enable the future of practical km-range RFIDs.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"30 1","pages":"607-610"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85926278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224007
J. Kamioka, M. Hangai, S. Miwa, Y. Kamo, S. Shinjo
This paper reports on a wideband Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed power amplifiers (NDPAs) are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to 44% across 2.5 to 11.0 GHz with chip size of 4.2 mm2. The other is a two-way combined HPA which demonstrates output power of 27 to 61 W, PAE of 24 to 43% across 2.5 to 10.0 GHz with chip size of 9.6 mm2.
{"title":"2.5 to 10.0 GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA","authors":"J. Kamioka, M. Hangai, S. Miwa, Y. Kamo, S. Shinjo","doi":"10.1109/IMS30576.2020.9224007","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224007","url":null,"abstract":"This paper reports on a wideband Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed power amplifiers (NDPAs) are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to 44% across 2.5 to 11.0 GHz with chip size of 4.2 mm2. The other is a two-way combined HPA which demonstrates output power of 27 to 61 W, PAE of 24 to 43% across 2.5 to 10.0 GHz with chip size of 9.6 mm2.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"87 1","pages":"265-268"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77144644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223866
A. Barakat, R. Pokharel, S. Alshhawy, K. Yoshitomi, S. Kawasaki
For the first time, we propose a combination of coupled defected ground structure (DGS) resonators for wireless power transfer and coupled Figure-8 inductors for information transfer. This combination allows the realization of a simultaneous compact wireless power and information transfer (WPIT). Each set of the DGS resonators and the Figure-8 inductors are located on the same plane. However, they show negligible coupling due to the coupling cancellation mechanism of the Figure-8 inductors. Hence, high isolation can be achieved between the power and information channels. A prototype is fabricated for operation at 50 MHz and 100 MHz. The overall area of the TX/RX is 30 mm × 30 mm and are separated by 14 mm. The measured efficiencies are 78% and 76% at 50 MHz and 100 MHz, respectively, and the isolation is more than 34 dB.
{"title":"High Isolation Simultaneous Wireless Power and Information Transfer System Using Coexisting DGS resonators and Figure-8 Inductors","authors":"A. Barakat, R. Pokharel, S. Alshhawy, K. Yoshitomi, S. Kawasaki","doi":"10.1109/IMS30576.2020.9223866","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223866","url":null,"abstract":"For the first time, we propose a combination of coupled defected ground structure (DGS) resonators for wireless power transfer and coupled Figure-8 inductors for information transfer. This combination allows the realization of a simultaneous compact wireless power and information transfer (WPIT). Each set of the DGS resonators and the Figure-8 inductors are located on the same plane. However, they show negligible coupling due to the coupling cancellation mechanism of the Figure-8 inductors. Hence, high isolation can be achieved between the power and information channels. A prototype is fabricated for operation at 50 MHz and 100 MHz. The overall area of the TX/RX is 30 mm × 30 mm and are separated by 14 mm. The measured efficiencies are 78% and 76% at 50 MHz and 100 MHz, respectively, and the isolation is more than 34 dB.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"72 1","pages":"1172-1175"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84103148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9224013
Hakhamanesh Mansoorzare, R. Abdolvand
This work demonstrates the first implementation of lithium niobate-on-silicon (LNoSi) non-reciprocal acoustic delay lines (ADL) with tunable insertion loss (IL) utilizing the acoustoelectric (AE) effect. Due to the AE effect, the direction-and the intensity-dependent momentum exchange between the drifting electrons in the Si layer and the acoustic phonons can be utilized to break the intrinsic reciprocity of the ADLs in order to control their frequency response. A 5.2 dB improvement in the IL and a 14.2 dB increase in the reverse isolation (i.e. a 19.4 dB non-reciprocal transmission ratio) is achieved through injecting a 400 µA current in one of the ADLs presented here. This opens up possibilities of merging long delays, tunable attenuators, and switches in a single miniaturized device which is a critical stepping stone in fulfillment of full-duplexed microwave systems.
{"title":"Non-Reciprocal Lithium Niobate-on-Silicon Acoustoelectric Delay Lines","authors":"Hakhamanesh Mansoorzare, R. Abdolvand","doi":"10.1109/IMS30576.2020.9224013","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9224013","url":null,"abstract":"This work demonstrates the first implementation of lithium niobate-on-silicon (LNoSi) non-reciprocal acoustic delay lines (ADL) with tunable insertion loss (IL) utilizing the acoustoelectric (AE) effect. Due to the AE effect, the direction-and the intensity-dependent momentum exchange between the drifting electrons in the Si layer and the acoustic phonons can be utilized to break the intrinsic reciprocity of the ADLs in order to control their frequency response. A 5.2 dB improvement in the IL and a 14.2 dB increase in the reverse isolation (i.e. a 19.4 dB non-reciprocal transmission ratio) is achieved through injecting a 400 µA current in one of the ADLs presented here. This opens up possibilities of merging long delays, tunable attenuators, and switches in a single miniaturized device which is a critical stepping stone in fulfillment of full-duplexed microwave systems.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"25 1","pages":"532-534"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77450728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223958
Haysam M. Kadry, D. Sounas
This paper presents a single ended magnetless circulator with inherent common-differential mode rejection between the RF and modulation paths. The circulator consists of three first-order bandstop LC filters differentially powered and modulated, eliminating the requirement of filters for isolation between the RF and modulation paths. A preliminary printed-circuit-board prototype at 1.78 GHz is fabricated and measured, showing an isolation of more than 20 dB, insertion loss of 5.5 dB, 2.6% bandwidth and power handling of 21 dBm, comparable to other designs in existing literature.
{"title":"Angular-Momentum Biased Circulator with a Common-Differential Mode Topology for RF and Modulation Isolation","authors":"Haysam M. Kadry, D. Sounas","doi":"10.1109/IMS30576.2020.9223958","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223958","url":null,"abstract":"This paper presents a single ended magnetless circulator with inherent common-differential mode rejection between the RF and modulation paths. The circulator consists of three first-order bandstop LC filters differentially powered and modulated, eliminating the requirement of filters for isolation between the RF and modulation paths. A preliminary printed-circuit-board prototype at 1.78 GHz is fabricated and measured, showing an isolation of more than 20 dB, insertion loss of 5.5 dB, 2.6% bandwidth and power handling of 21 dBm, comparable to other designs in existing literature.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"116 1","pages":"723-726"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77977718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223836
J. Orlianges, Mariem Laouini, C. Hallepee, P. Blondy
This paper presents the fabrication and measurements of RF-MEMS, zero-level packaged switched capacitors. Crystallized Ta/Ta2O5 electrodes are used for electrostatic actuation. The electrode formation is conducted in a single deposition step, providing a very good metal (Ta) to dielectric (Ta2O5) interface. The 60×50 µm MEMS capacitor can be switched from 50 fF to 350 fF, by applying a 15 V unipolar bias voltage. 8-hours hold-down testing have shown the absence of charging. The high permittivity of Ta2O5 also increases 5 times the capacitance value compared to SiN-based switched MEMS capacitors with the same surface.
{"title":"RF-MEMS Switched Capacitor using Ta/Ta2O5 Electrodes","authors":"J. Orlianges, Mariem Laouini, C. Hallepee, P. Blondy","doi":"10.1109/IMS30576.2020.9223836","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223836","url":null,"abstract":"This paper presents the fabrication and measurements of RF-MEMS, zero-level packaged switched capacitors. Crystallized Ta/Ta2O5 electrodes are used for electrostatic actuation. The electrode formation is conducted in a single deposition step, providing a very good metal (Ta) to dielectric (Ta2O5) interface. The 60×50 µm MEMS capacitor can be switched from 50 fF to 350 fF, by applying a 15 V unipolar bias voltage. 8-hours hold-down testing have shown the absence of charging. The high permittivity of Ta2O5 also increases 5 times the capacitance value compared to SiN-based switched MEMS capacitors with the same surface.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"4 1","pages":"41-44"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82445082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223949
Jose Antonio Bahaonde, I. Kymissis, H. Krishnaswamy
In this work, we demonstrate a non-magnetic circulator based on spatio-temporal conductivity modulation (STCM) with cutting edge gallium nitride (GaN) high-electron mobility transistors (HEMTs). The circulator exhibits low insertion loss of -2.56 dB from transmitter (TX) to antenna (ANT) and -3.01 dB from ANT to receiver (RX). Additionally it demonstrates a maximum TX to RX isolation of 40 dB. Due to the virtues of GaN, the circulator also exhibits a record input referred third-order intercept point (IIP3) of 56.12 dBm for TX to ANT transmission. These advanced performance metrics achieved in this first demonstration point to the feasibility of GaN non-magnetic circulators that can achieve the stringent performance metrics required by DoD and commercial applications.
{"title":"A Highly Linear Non-Magnetic GaN Circulator Based on Spatio-Temporal Modulation with an IIP3 of 56 dBm","authors":"Jose Antonio Bahaonde, I. Kymissis, H. Krishnaswamy","doi":"10.1109/IMS30576.2020.9223949","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223949","url":null,"abstract":"In this work, we demonstrate a non-magnetic circulator based on spatio-temporal conductivity modulation (STCM) with cutting edge gallium nitride (GaN) high-electron mobility transistors (HEMTs). The circulator exhibits low insertion loss of -2.56 dB from transmitter (TX) to antenna (ANT) and -3.01 dB from ANT to receiver (RX). Additionally it demonstrates a maximum TX to RX isolation of 40 dB. Due to the virtues of GaN, the circulator also exhibits a record input referred third-order intercept point (IIP3) of 56.12 dBm for TX to ANT transmission. These advanced performance metrics achieved in this first demonstration point to the feasibility of GaN non-magnetic circulators that can achieve the stringent performance metrics required by DoD and commercial applications.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"33 1","pages":"535-538"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81299619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223789
Ruochen Lu, Yansong Yang, Steffen Link, S. Gong
In this work, we present the low-loss acoustic delay lines (ADLs) at 5.4 GHz, using the first-order antisymmetric (A1) mode in lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of the quarter acoustic wavelength. The fabricated miniature A1 ADLs with a feature size of 0.45 μm show a center frequency of 5.4 GHz, a minimum insertion loss (IL) of 3.0 dB, and a fractional bandwidth (FBW) of 1.6% while occupying a footprint of 0.0074 mm2. The simultaneously low IL and high operating frequency significantly surpass the state-of-the-art performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated performance can potentially enable low-loss, high-frequency transversal filter applications for future 5G applications in the sub-6 GHz spectrum bands.
{"title":"5.4 GHz Acoustic Delay Lines in Lithium Niobate Thin Film with 3 dB Insertion Loss","authors":"Ruochen Lu, Yansong Yang, Steffen Link, S. Gong","doi":"10.1109/IMS30576.2020.9223789","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223789","url":null,"abstract":"In this work, we present the low-loss acoustic delay lines (ADLs) at 5.4 GHz, using the first-order antisymmetric (A1) mode in lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of the quarter acoustic wavelength. The fabricated miniature A1 ADLs with a feature size of 0.45 μm show a center frequency of 5.4 GHz, a minimum insertion loss (IL) of 3.0 dB, and a fractional bandwidth (FBW) of 1.6% while occupying a footprint of 0.0074 mm2. The simultaneously low IL and high operating frequency significantly surpass the state-of-the-art performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated performance can potentially enable low-loss, high-frequency transversal filter applications for future 5G applications in the sub-6 GHz spectrum bands.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"1 1","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82300950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223831
Xiaohu Wu, M. Nafe, X. Liu
This paper reports for the first time a magnetless microstrip circulator with a filtering response. By coupling static resonators to spatio-temporally modulated resonators, two isolation poles and two reflection poles can be obtained within the passband, showing wideband nonreciprocal transmission and impedance matching characteristics. As a proof-of-concept, a microstrip circulator at 825 MHz is designed, simulated, and measured. The measurement shows excellent circulator responses with minimum in-band insertion loss of 1.75 dB, in-band isolation better than 20 dB, and in-band return loss better than 20 dB. The measurement agrees very well with simulation.
{"title":"A Magnetless Microstrip Filtering Circulator based on Coupled Static and Time-Modulated Resonators","authors":"Xiaohu Wu, M. Nafe, X. Liu","doi":"10.1109/IMS30576.2020.9223831","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223831","url":null,"abstract":"This paper reports for the first time a magnetless microstrip circulator with a filtering response. By coupling static resonators to spatio-temporally modulated resonators, two isolation poles and two reflection poles can be obtained within the passband, showing wideband nonreciprocal transmission and impedance matching characteristics. As a proof-of-concept, a microstrip circulator at 825 MHz is designed, simulated, and measured. The measurement shows excellent circulator responses with minimum in-band insertion loss of 1.75 dB, in-band isolation better than 20 dB, and in-band return loss better than 20 dB. The measurement agrees very well with simulation.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"89 1","pages":"948-951"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86873581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-08-01DOI: 10.1109/IMS30576.2020.9223899
A. Boulmirat, A. Siligaris, C. Jany, J. González-Jiménez
This paper presents a lock detector integrated in a 60GHz band frequency multiplier with high multiplication factor. The proposed circuit detects the locking state of an injection locked oscillator. It relies on power integration besides the ILO targeted frequency. The proposed lock detector and the associated frequency multiplier presents a consumption of 61 mW and 5.2 mW respectively. The area occupied by the lock detector is less than 3% of the overall chip area. The locking detector is the cornerstone of injected oscillator calibration, and enables high-N frequency multiplication-based frequency synthesis.
{"title":"Lock Detector Integrated in a High Order Frequency Multiplier Operating at 60-GHz-Band in 45nm CMOS SOI Technology","authors":"A. Boulmirat, A. Siligaris, C. Jany, J. González-Jiménez","doi":"10.1109/IMS30576.2020.9223899","DOIUrl":"https://doi.org/10.1109/IMS30576.2020.9223899","url":null,"abstract":"This paper presents a lock detector integrated in a 60GHz band frequency multiplier with high multiplication factor. The proposed circuit detects the locking state of an injection locked oscillator. It relies on power integration besides the ILO targeted frequency. The proposed lock detector and the associated frequency multiplier presents a consumption of 61 mW and 5.2 mW respectively. The area occupied by the lock detector is less than 3% of the overall chip area. The locking detector is the cornerstone of injected oscillator calibration, and enables high-N frequency multiplication-based frequency synthesis.","PeriodicalId":6784,"journal":{"name":"2020 IEEE/MTT-S International Microwave Symposium (IMS)","volume":"11 1","pages":"944-947"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88216219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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