Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518995
Haidy Alaa, Noureddine Khaled, Rania Rushdy, T. Hatem
The increase of conventional energy has negative impact on the earth and the environment which also affects the next generation. Therefore, renewable energy sources are used as they are sustainable. Besides, renewable energy sources, energy efficiency aspect is used to insure lowest negative impact on the environment which is measured by the green pyramid rating system in Egypt. The purpose of this research is to discuss the applicability of having a zero-energy educational building in Egypt by installing a PV system and decreasing the demand using the energy efficiency criteria of the green pyramid rating system. The case study is the energy and environmental engineering building in the British university in Egypt. This can be achieved by installing a PV system and decreasing the demand using the energy efficiency criteria of the green pyramid rating system.
{"title":"Zero Energy Educational Building: A Case Study of The Energy and Environmental Engineering Building in The British University in Egypt","authors":"Haidy Alaa, Noureddine Khaled, Rania Rushdy, T. Hatem","doi":"10.1109/PVSC43889.2021.9518995","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518995","url":null,"abstract":"The increase of conventional energy has negative impact on the earth and the environment which also affects the next generation. Therefore, renewable energy sources are used as they are sustainable. Besides, renewable energy sources, energy efficiency aspect is used to insure lowest negative impact on the environment which is measured by the green pyramid rating system in Egypt. The purpose of this research is to discuss the applicability of having a zero-energy educational building in Egypt by installing a PV system and decreasing the demand using the energy efficiency criteria of the green pyramid rating system. The case study is the energy and environmental engineering building in the British university in Egypt. This can be achieved by installing a PV system and decreasing the demand using the energy efficiency criteria of the green pyramid rating system.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"10 1","pages":"1913-1915"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83335516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518797
Lyndsey McMillon-Brown, T. Peshek, A. Pal, J. Mcnatt
We investigated the utility of ground-based highly accelerated life testing (HALT) on epitaxial lift-off (ELO) triple-junction coverglass interconnected cells (CICs) after exposure to simulated Martian dust storms. Dust storm impingement was replicated by sandblasting CICs with Mars dust simulant replicating conditions similar to the weather conditions reported by the Viking landers. We observed that even in cases when there are no observable open circuit voltage (VOC) losses, the minority carrier lifetime is reduced. Short circuit current (JSC) losses can be recovered upon cleaning, suggesting JSC losses are not linked to permanent damage, like cell cracking. This suggests a permanent degradation could be determined by quantifying the difference between recoverable and non-recoverable power loss. We mined field data from the Mars Exploration Rover, Opportunity and extracted a degradation rate to compare to our experimental data. We found exceptional agreement between 4.9 Martian years of mined field data (9.4%) and the irreversible damage observed in our HALT experiment (9.7%). We demonstrate that the laboratory method for exposing CICs to Martian dust storm conditions well represents the physical reality of long duration CIC operation on Mars.
{"title":"Martian Dust Abrasion Damage on Solar Arrays: HALT Experimental Investigation and Opportunity Rover Performance Analysis","authors":"Lyndsey McMillon-Brown, T. Peshek, A. Pal, J. Mcnatt","doi":"10.1109/PVSC43889.2021.9518797","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518797","url":null,"abstract":"We investigated the utility of ground-based highly accelerated life testing (HALT) on epitaxial lift-off (ELO) triple-junction coverglass interconnected cells (CICs) after exposure to simulated Martian dust storms. Dust storm impingement was replicated by sandblasting CICs with Mars dust simulant replicating conditions similar to the weather conditions reported by the Viking landers. We observed that even in cases when there are no observable open circuit voltage (VOC) losses, the minority carrier lifetime is reduced. Short circuit current (JSC) losses can be recovered upon cleaning, suggesting JSC losses are not linked to permanent damage, like cell cracking. This suggests a permanent degradation could be determined by quantifying the difference between recoverable and non-recoverable power loss. We mined field data from the Mars Exploration Rover, Opportunity and extracted a degradation rate to compare to our experimental data. We found exceptional agreement between 4.9 Martian years of mined field data (9.4%) and the irreversible damage observed in our HALT experiment (9.7%). We demonstrate that the laboratory method for exposing CICs to Martian dust storm conditions well represents the physical reality of long duration CIC operation on Mars.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"5 Med Sect 1","pages":"0229-0232"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83381552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518856
T. Takamatsu, Hideaki Ohtake, T. Oozeki
In the interests of the stable operation of the transmission system, transmission system operators (TSOs) procure regulating power supplies to cope with significant deviations from renewable energy forecasts. Therefore, it becomes important to improve the average precision of the one-day ahead forecast and to decrease the maximum error of the forecast in a power transmission system with a large number of photovoltaic systems. In this paper, the quantile regression using support vector machines is applied to the prediction of the previous day’s solar radiation, and it is confirmed that maximum width of the error can be reduced while suppressing the minimum length of the prediction error.
{"title":"Global Horizontal Irradiance Forecast at Kanto Region in Japan by Qunatile Regression of Support Vector Machine","authors":"T. Takamatsu, Hideaki Ohtake, T. Oozeki","doi":"10.1109/PVSC43889.2021.9518856","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518856","url":null,"abstract":"In the interests of the stable operation of the transmission system, transmission system operators (TSOs) procure regulating power supplies to cope with significant deviations from renewable energy forecasts. Therefore, it becomes important to improve the average precision of the one-day ahead forecast and to decrease the maximum error of the forecast in a power transmission system with a large number of photovoltaic systems. In this paper, the quantile regression using support vector machines is applied to the prediction of the previous day’s solar radiation, and it is confirmed that maximum width of the error can be reduced while suppressing the minimum length of the prediction error.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"2646-2647"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82355007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518726
R. Ahrenkiel, S. Holland
High purity crystalline germanium has several applications in optoelectronic devices. These include as a substrate and active component of tandem, high efficiency solar cells used in concentrator and space photovoltaics. Here, we are looking at the development of a Ge-based charge coupled devices (CCD) to be used in conjunction with large, terrestrial telescopes used for astronomical studies of red shifts in galaxies and other celestial bodies. In one photovoltaic phtotvoltaic application, large bulk recombination lifetimes are significant for efficiency improvement when a p-n junction is incorporated into the substrate of a tandem device. In the CCD device, the bulk lifetime is critical for low dark current. Also, the development of an insulating gate technology, with low interface recombination velocity, is a critical component of CCD development. Here we used transient photoconductive decay as a metric to evaluate the performance of such interfaces. Bulk lifetimes exceeding 2 ms were found in some high purity materials. The effects on the lifetimes after annealing of the Ge at 300C and 600C was studied. The results of various processing experiments and protocols will be reviewed.
{"title":"MOS technology development on 150 mm Ge wafers","authors":"R. Ahrenkiel, S. Holland","doi":"10.1109/PVSC43889.2021.9518726","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518726","url":null,"abstract":"High purity crystalline germanium has several applications in optoelectronic devices. These include as a substrate and active component of tandem, high efficiency solar cells used in concentrator and space photovoltaics. Here, we are looking at the development of a Ge-based charge coupled devices (CCD) to be used in conjunction with large, terrestrial telescopes used for astronomical studies of red shifts in galaxies and other celestial bodies. In one photovoltaic phtotvoltaic application, large bulk recombination lifetimes are significant for efficiency improvement when a p-n junction is incorporated into the substrate of a tandem device. In the CCD device, the bulk lifetime is critical for low dark current. Also, the development of an insulating gate technology, with low interface recombination velocity, is a critical component of CCD development. Here we used transient photoconductive decay as a metric to evaluate the performance of such interfaces. Bulk lifetimes exceeding 2 ms were found in some high purity materials. The effects on the lifetimes after annealing of the Ge at 300C and 600C was studied. The results of various processing experiments and protocols will be reviewed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"13 1","pages":"1936-1940"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82447776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518963
H. N. Riise, Mari B. Øgaard, Junjie Zhu, C. C. You, F. Andersson, Tommy Bønsnæs, J. Young, S. Foss
The performance of a BAPV bifacial system in Porsgrunn, Norway is reported. Specific yield of the plant is 1342 kWh/kWp while the PR is 1.01 for April 2020 to March 2021, both values considerably higher than typical performance of Norwegian PV plants. The high performance is in large part due to the bifacial gain of the system, which is calculated to 17 %. The bifacial gain, and performance of the plant is increased through a novel albedo-enhancing membrane underneath the modules. Through bifacial gain analysis and reflectance measurements of the membrane, its albedo is estimated to be 40-60 %. The impact of snow and shading is investigated and found to be insignificant for the annual energy production of the plant.
{"title":"Performance analysis of a BAPV bifacial system in Norway","authors":"H. N. Riise, Mari B. Øgaard, Junjie Zhu, C. C. You, F. Andersson, Tommy Bønsnæs, J. Young, S. Foss","doi":"10.1109/PVSC43889.2021.9518963","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518963","url":null,"abstract":"The performance of a BAPV bifacial system in Porsgrunn, Norway is reported. Specific yield of the plant is 1342 kWh/kWp while the PR is 1.01 for April 2020 to March 2021, both values considerably higher than typical performance of Norwegian PV plants. The high performance is in large part due to the bifacial gain of the system, which is calculated to 17 %. The bifacial gain, and performance of the plant is increased through a novel albedo-enhancing membrane underneath the modules. Through bifacial gain analysis and reflectance measurements of the membrane, its albedo is estimated to be 40-60 %. The impact of snow and shading is investigated and found to be insignificant for the annual energy production of the plant.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"21 1","pages":"1304-1308"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81020403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518831
Junkang Wang, Monalisa Ghosh, Fatima Ouadjane, Borja Carbonell, P. Bulkin, D. Daineka, K. Ouaras, Pere Roca i Cabarrocas, S. Filonovich, J. Alvarez, E. Johnson
We present results from the application of a novel, contactless patterning technique to form the doped fingers required for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells. The technique involves patterning the RF powered electrode in a custom-designed RF-PECVD chamber. The patterned powered electrode – which has 1 mm wide opening-slits in it - is brought in close proximity to the substrate surface, to localize the plasma and the process it performs. In this work, the localized plasma process being employed is an NF3/Ar etching, and is used to form doped fingers that are sub-mm wide and 60 mm long. The interdigitated structure (alternating electron and hole collection zones) is created by first uniformly depositing an intrinsic/n-type a-Si:H passivation stack, followed by an n-type/p-type µc-Si:H recombination junction on the rear side. A passivation layer is also deposited on the front side. The regions for the hole collection zones are then etched down to the intrinsic a-Si:H layer, and finally, a uniform p-type a-Si:H layer is deposited everywhere. The etched finger areas are first investigated by profilometry and spectroscopic ellipsometry, showing that the process can be controlled to leave as little as a few nanometers of passivating intrinsic a-Si:H. This fine control is achieved by pulsing the plasma, to slow the etching rate to a few Å/s. To evaluate the detailed opto-electronic properties of the structure, the samples are mapped out using two contactless techniques: Photoluminescence and Surface Photovoltage measurements (done with a macroscopic scanning Kelvin probe performed under dark and illuminated conditions). These measurements enable one to see both zones of degraded passivation, and the effectiveness of the doped regions in generating an open circuit voltage under illumination.
{"title":"A Contactless Patterned Plasma Processing for Interdigitated Back Contact Silicon Heterojunction Solar Cells Fabrication","authors":"Junkang Wang, Monalisa Ghosh, Fatima Ouadjane, Borja Carbonell, P. Bulkin, D. Daineka, K. Ouaras, Pere Roca i Cabarrocas, S. Filonovich, J. Alvarez, E. Johnson","doi":"10.1109/PVSC43889.2021.9518831","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518831","url":null,"abstract":"We present results from the application of a novel, contactless patterning technique to form the doped fingers required for interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells. The technique involves patterning the RF powered electrode in a custom-designed RF-PECVD chamber. The patterned powered electrode – which has 1 mm wide opening-slits in it - is brought in close proximity to the substrate surface, to localize the plasma and the process it performs. In this work, the localized plasma process being employed is an NF3/Ar etching, and is used to form doped fingers that are sub-mm wide and 60 mm long. The interdigitated structure (alternating electron and hole collection zones) is created by first uniformly depositing an intrinsic/n-type a-Si:H passivation stack, followed by an n-type/p-type µc-Si:H recombination junction on the rear side. A passivation layer is also deposited on the front side. The regions for the hole collection zones are then etched down to the intrinsic a-Si:H layer, and finally, a uniform p-type a-Si:H layer is deposited everywhere. The etched finger areas are first investigated by profilometry and spectroscopic ellipsometry, showing that the process can be controlled to leave as little as a few nanometers of passivating intrinsic a-Si:H. This fine control is achieved by pulsing the plasma, to slow the etching rate to a few Å/s. To evaluate the detailed opto-electronic properties of the structure, the samples are mapped out using two contactless techniques: Photoluminescence and Surface Photovoltage measurements (done with a macroscopic scanning Kelvin probe performed under dark and illuminated conditions). These measurements enable one to see both zones of degraded passivation, and the effectiveness of the doped regions in generating an open circuit voltage under illumination.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"11 1","pages":"0596-0601"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81039959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518967
O. A. Arruti, Luca Gnocchi, Q. Jeangros, A. Virtuani, C. Ballif
Recent studies showed that silicon heterojunction (SHJ) solar cells can be prone to potential induced degradation (PID) when encapsulated with ethylene vinyl acetate (EVA). Here, to gain understanding in the role of EVA, we perform PID test in humid conditions (85°C/85% RH) under a negative bias (-1000V). We study the effect of moisture ingress and cover materials by using different module structures. We focus on studying both sides of the cell for modules packaged in a glass/glass scheme after 500 hours of test (corresponding to ~5 times the duration foreseen by the corresponding IEC standard). The front-side degradation is dominated by a reduction in short-circuit current (JSC), whereas the rear-side degradation is driven by a loss in fill factor (FF). EQE measurements show that increased front-surface recombination is largely responsible for the observed degradation of the front-side. From TEM and EDX measurements, it seems that the degradation at the cell level is predominantly caused by diffusion of sodium into the cell, which is triggered by humidity and low encapsulant resistivity. Assuming that the Na is also accumulated at the rear-side of the cell, this would create defects at the p-n junction, leading to the loss of FF observed.
{"title":"Potential Induced Degradation Mechanism in Rear-Emitter Bifacial Silicon Heterojunction Solar Cells Encapsulated in Different Module Structures","authors":"O. A. Arruti, Luca Gnocchi, Q. Jeangros, A. Virtuani, C. Ballif","doi":"10.1109/PVSC43889.2021.9518967","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518967","url":null,"abstract":"Recent studies showed that silicon heterojunction (SHJ) solar cells can be prone to potential induced degradation (PID) when encapsulated with ethylene vinyl acetate (EVA). Here, to gain understanding in the role of EVA, we perform PID test in humid conditions (85°C/85% RH) under a negative bias (-1000V). We study the effect of moisture ingress and cover materials by using different module structures. We focus on studying both sides of the cell for modules packaged in a glass/glass scheme after 500 hours of test (corresponding to ~5 times the duration foreseen by the corresponding IEC standard). The front-side degradation is dominated by a reduction in short-circuit current (JSC), whereas the rear-side degradation is driven by a loss in fill factor (FF). EQE measurements show that increased front-surface recombination is largely responsible for the observed degradation of the front-side. From TEM and EDX measurements, it seems that the degradation at the cell level is predominantly caused by diffusion of sodium into the cell, which is triggered by humidity and low encapsulant resistivity. Assuming that the Na is also accumulated at the rear-side of the cell, this would create defects at the p-n junction, leading to the loss of FF observed.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"2032-2036"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83026187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518965
Robert T. Piper, Weijie Xu, J. Hsu
Indium tin oxide (ITO) coated Willow glass is an excellent substrate for roll-to-roll manufacturing of perovskite solar cells (PSCs) but can have large variability in its optical and electrical properties. Photonic curing uses intense light pulses instead of heat to process materials and has the potential to facilitate faster processing speeds in roll-to-roll manufacturing to upscale the production of PSCs. The substrate materials’ properties play an integral role in the photonic curing outcome. Here, we present the effect of ITO transmission on the photonic curing of NiO sol-gel precursors into metal oxide and consequently the PSC performance.
{"title":"Optical and Electrical Properties of ITO Coated Willow Glass for Upscaling Perovskite Solar Cell Manufacturing Using Photonic Curing","authors":"Robert T. Piper, Weijie Xu, J. Hsu","doi":"10.1109/PVSC43889.2021.9518965","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518965","url":null,"abstract":"Indium tin oxide (ITO) coated Willow glass is an excellent substrate for roll-to-roll manufacturing of perovskite solar cells (PSCs) but can have large variability in its optical and electrical properties. Photonic curing uses intense light pulses instead of heat to process materials and has the potential to facilitate faster processing speeds in roll-to-roll manufacturing to upscale the production of PSCs. The substrate materials’ properties play an integral role in the photonic curing outcome. Here, we present the effect of ITO transmission on the photonic curing of NiO sol-gel precursors into metal oxide and consequently the PSC performance.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"2293-2295"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83255660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518600
Shikha Marwaha, K. Ghosh
Silicon solar cells with carrier selective contacts (CSC) provide a pathway to achieve efficiency close to the thermodynamic limit. Integrating the silicon CSC solar cell with a perovskite solar cell in a tandem structure further enhances the efficiency. In this work, we report the theoretical analysis of perovskite/silicon tandem solar cells in detail. Effect of bulk lifetimes and surface recombination velocities in silicon and perovskite absorber layers on the tandem solar cell performance has been investigated through electrical parameter evaluation.
{"title":"Impact of device parameters on the performance of CSC based silicon tandem solar cells","authors":"Shikha Marwaha, K. Ghosh","doi":"10.1109/PVSC43889.2021.9518600","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518600","url":null,"abstract":"Silicon solar cells with carrier selective contacts (CSC) provide a pathway to achieve efficiency close to the thermodynamic limit. Integrating the silicon CSC solar cell with a perovskite solar cell in a tandem structure further enhances the efficiency. In this work, we report the theoretical analysis of perovskite/silicon tandem solar cells in detail. Effect of bulk lifetimes and surface recombination velocities in silicon and perovskite absorber layers on the tandem solar cell performance has been investigated through electrical parameter evaluation.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"62 6 1","pages":"1250-1253"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83263386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-20DOI: 10.1109/PVSC43889.2021.9518531
Pascal M. Jundt, Ramesh Pandey, A. Munshi, J. Sites
The realization of a transparent back buffer layer would be a significant boon for the CdTe community. Simulations presented here reveal a substantial performance increase in ultrathin cells through incorporation of a back buffer, as well as high bifaciality if transparent contacts are assumed. This project aims to deposit a p-type transparent conducting oxide (TCO) at the back of superstrate CdSeTe/CdTe cells to improve band bending and interface recombination at the rear of the cell, and ultimately to bring high performing bifacial cells to fruition. Four such oxides were sputter deposited to create a collection of functional bifacial cells. Back surface passivation was evaluated with rear-excitation time-resolved photoluminescence (TRPL). Several promising materials yielded rear-excitation lifetimes >2 ns, indicating effective passivation.
{"title":"Transparent Buffer Layer for Back Surface Passivation in CdTe Photovoltaics","authors":"Pascal M. Jundt, Ramesh Pandey, A. Munshi, J. Sites","doi":"10.1109/PVSC43889.2021.9518531","DOIUrl":"https://doi.org/10.1109/PVSC43889.2021.9518531","url":null,"abstract":"The realization of a transparent back buffer layer would be a significant boon for the CdTe community. Simulations presented here reveal a substantial performance increase in ultrathin cells through incorporation of a back buffer, as well as high bifaciality if transparent contacts are assumed. This project aims to deposit a p-type transparent conducting oxide (TCO) at the back of superstrate CdSeTe/CdTe cells to improve band bending and interface recombination at the rear of the cell, and ultimately to bring high performing bifacial cells to fruition. Four such oxides were sputter deposited to create a collection of functional bifacial cells. Back surface passivation was evaluated with rear-excitation time-resolved photoluminescence (TRPL). Several promising materials yielded rear-excitation lifetimes >2 ns, indicating effective passivation.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"73 1","pages":"1614-1618"},"PeriodicalIF":0.0,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83363748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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