Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675161
Pan Mingqing, Wang Huailei, Luo Xu, Deng Liang
As an important part of the car, the rear combination lamp of the car has been developed from the traditional single lighting function to multi-functional intelligent lighting components. The dynamic steering display and dazzling welcome lighting effects have been developed for the appearance of the car. The detection method of the combined lamp is significant to ensure the quality of the product. In this paper, an automatic detection system for rear combination lamps is designed based on machine vision. The test results show that the system can efficiently detect the functions and characteristics of the rear combination lamps.
{"title":"Research and Development of Rear Combined Lamp Detection System Based on Machine Vision","authors":"Pan Mingqing, Wang Huailei, Luo Xu, Deng Liang","doi":"10.1109/SSLChinaIFWS54608.2021.9675161","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675161","url":null,"abstract":"As an important part of the car, the rear combination lamp of the car has been developed from the traditional single lighting function to multi-functional intelligent lighting components. The dynamic steering display and dazzling welcome lighting effects have been developed for the appearance of the car. The detection method of the combined lamp is significant to ensure the quality of the product. In this paper, an automatic detection system for rear combination lamps is designed based on machine vision. The test results show that the system can efficiently detect the functions and characteristics of the rear combination lamps.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"24 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88555838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675230
J. G. Liu, H. Zhu, Lei Zhu, Chong-yu Shen, Ruping Zheng, Yousan Chen, Jianxing Xu
The improved efficiency of Phosphor-converted white LED devices and fixtures along with the significant cost down effort have led to tremendous market growth in almost every lighting application. However, the high-energy blue proportion of phosphor-converted white LED has raised concern about photochemically induced retinal damages. For applications such as classroom lighting, the blue light hazard reduction along with other parameters such as illuminance, illuminance uniformity, colour rendering, flicker, glare are all important considerations. In the paper, we present two different LED package designs and their spectral power distribution (SPD) characters suitable for classroom lighting. The first design uses common approach of single wavelength blue LED chip to excite multiple phosphors to achieve high colour rendering of Ra98. The second design uses two different wavelength blue LED chips combined with phosphors to further reduce the high energy blue light while maintaining colour rendering of Ra98. The LED package of the second design approach is found to be more suitable and is therefore built into fixtures and implemented in a classroom. The lighting design of the classroom using Dailux simulation tools is also presented. Key parameters are then measured to meet the lighting quality standard of GB 7793–2010 for classroom application.
{"title":"Spectral Design Considerations of White LED for Classroom Application","authors":"J. G. Liu, H. Zhu, Lei Zhu, Chong-yu Shen, Ruping Zheng, Yousan Chen, Jianxing Xu","doi":"10.1109/SSLChinaIFWS54608.2021.9675230","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675230","url":null,"abstract":"The improved efficiency of Phosphor-converted white LED devices and fixtures along with the significant cost down effort have led to tremendous market growth in almost every lighting application. However, the high-energy blue proportion of phosphor-converted white LED has raised concern about photochemically induced retinal damages. For applications such as classroom lighting, the blue light hazard reduction along with other parameters such as illuminance, illuminance uniformity, colour rendering, flicker, glare are all important considerations. In the paper, we present two different LED package designs and their spectral power distribution (SPD) characters suitable for classroom lighting. The first design uses common approach of single wavelength blue LED chip to excite multiple phosphors to achieve high colour rendering of Ra98. The second design uses two different wavelength blue LED chips combined with phosphors to further reduce the high energy blue light while maintaining colour rendering of Ra98. The LED package of the second design approach is found to be more suitable and is therefore built into fixtures and implemented in a classroom. The lighting design of the classroom using Dailux simulation tools is also presented. Key parameters are then measured to meet the lighting quality standard of GB 7793–2010 for classroom application.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"20 1","pages":"109-113"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73716650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multilayers and trench MOS structures have been involved to investigate the diffusion behavior of Mg atoms and the corresponded electrical properties. Four groups of p-n + stacked layers were grown to study the effect of different interfacial treatment. The growth conditions of these four groups were identical except for different interfacial treatment during the growth, including as grown, furnace annealing, AlGaN interlayer and furnace annealing with AlGaN interlayer. Furnace annealing refers to 850°C for 10 min in a nitrogen atmosphere in MOCVD and AlGaN interlayer means a 50 nm Si-doped $text{Al}_{0.08}text{Ga}_{0.92}mathrm{N}$ layers have been inserted. The slope of the Mg concentration for the furnace annealing sample is 90 s/dec-less than 63% of the as-grown sample. SIMS results also reveals that furnace annealing introduce an interface with a low conductivity while an improved sheet resistance of subsequent n + layer from 630 Ω/Ÿ to 415 Ω/Ÿ. Especially, the sum of resistance, including the drain and source contact resistance, contact layer resistance (RS and RD) and channel resistance (RCH), decreased from 151.5 Ω.mm to 125.9 Ω.mm via furnace annealing which has been verified by quasi-vertical n+-p-unintentionally doped (n+-p-uid) GaN-on-GaN trench MOS structure with different trench width. Furnace annealing has been successfully used to prevent Mg atoms from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n+-type layer and improve the electrical characteristic of sheet resistance and ON-resistance in the device of trench MOS structure. This work shows a great reference value for GaN with a buried p-GaN structure.
{"title":"Suppression of Mg Propagate into Subsequent Layers by Furnace Annealing","authors":"Wenxin Tang, L. Zhang, Xing Wei, Jiaan Zhou, Weining Liu, Zengli Huang, Guohao Yu, Baoshun Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675233","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675233","url":null,"abstract":"Multilayers and trench MOS structures have been involved to investigate the diffusion behavior of Mg atoms and the corresponded electrical properties. Four groups of p-n + stacked layers were grown to study the effect of different interfacial treatment. The growth conditions of these four groups were identical except for different interfacial treatment during the growth, including as grown, furnace annealing, AlGaN interlayer and furnace annealing with AlGaN interlayer. Furnace annealing refers to 850°C for 10 min in a nitrogen atmosphere in MOCVD and AlGaN interlayer means a 50 nm Si-doped $text{Al}_{0.08}text{Ga}_{0.92}mathrm{N}$ layers have been inserted. The slope of the Mg concentration for the furnace annealing sample is 90 s/dec-less than 63% of the as-grown sample. SIMS results also reveals that furnace annealing introduce an interface with a low conductivity while an improved sheet resistance of subsequent n + layer from 630 Ω/Ÿ to 415 Ω/Ÿ. Especially, the sum of resistance, including the drain and source contact resistance, contact layer resistance (RS and RD) and channel resistance (RCH), decreased from 151.5 Ω.mm to 125.9 Ω.mm via furnace annealing which has been verified by quasi-vertical n+-p-unintentionally doped (n+-p-uid) GaN-on-GaN trench MOS structure with different trench width. Furnace annealing has been successfully used to prevent Mg atoms from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n+-type layer and improve the electrical characteristic of sheet resistance and ON-resistance in the device of trench MOS structure. This work shows a great reference value for GaN with a buried p-GaN structure.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"76 1","pages":"78-81"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81046795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675268
Benliang Li, Liwen Gu
This paper tested and compared the performance, reliability and core technologies of LED outdoor and indoor controlgear products of street lamps, landscape lighting, downlights and eye protection lamps. The paper also compared and analyzed the parameters of domestic and international standards for LED controlgear. Through the research of physical quality comparison in performance and reliability and analysis in standard comparison, some proposals were given in quality promotion and two alliance standards were formulated.
{"title":"The research of LED controlgear products by quality comparison and promotion","authors":"Benliang Li, Liwen Gu","doi":"10.1109/SSLChinaIFWS54608.2021.9675268","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675268","url":null,"abstract":"This paper tested and compared the performance, reliability and core technologies of LED outdoor and indoor controlgear products of street lamps, landscape lighting, downlights and eye protection lamps. The paper also compared and analyzed the parameters of domestic and international standards for LED controlgear. Through the research of physical quality comparison in performance and reliability and analysis in standard comparison, some proposals were given in quality promotion and two alliance standards were formulated.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"33 1","pages":"243-245"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90324240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675174
Liangtao Li, Jiuyang Tang, J. Zhang, Jing Zhang, Yingcan Zhu, Guoqi Zhang, Pan Liu
The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.
{"title":"Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging","authors":"Liangtao Li, Jiuyang Tang, J. Zhang, Jing Zhang, Yingcan Zhu, Guoqi Zhang, Pan Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675174","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675174","url":null,"abstract":"The development of silicon-based high-power devices, e.g. IGBTs, has reached its application limits in terms of high-temperature and high-frequency harsh operating conditions. Wide bandgap (WBG) power devices (such as silicon carbide, SiC) are currently one of the most promising power devices for replacement. Due to their intrinsic bandgap, SiC high-power devices have proven their superior performance in high-frequency and high-temperature working scenarios. With the increasing demand of high-power semiconductor devices in industries such as new-energy vehicles, high-speed railway systems, and aerospace, the conditions of SiC power semiconductor devices have become more and more complex, which brings challenges to electronic packaging technology. Due to thermal management and reliability requirements for SiC power devices, customized advanced heat dissipation structures, and high-temperature soldering materials have been introduced in power device packaging technology. The reliability verification of these new electronic packaging technologies is often time-consuming and labor-intensive, so designers hope to obtain results consistent with actual experimental data through the utilization of computer-aided design methods, such as finite-element analysis (FEA), which will greatly reduce the number of iterations of physical prototypes and the development time. This article reviewed and discussed the application of FEA in the latest packaging technology, including the extraction of the thermal resistance network of the SiC power module, the thermal simulation of the novel efficient cooling structure, the thermo-mechanical analysis of the high-temperature packaging material, and the long-term reliability FEA of the SiC power devices.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"35 1","pages":"53-57"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90872193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675158
L. Zhang, C. Shen, R. An, C. Geng, J. Liu, S. Xu
Quantum dots (QDs) have recently attracted intensive research interest with their advantage optical properties and easy processing in micro/mini-LED applications. However, integrating QDs into LED packaging still faces critical challenges of fluorescent quenching and thermal-induced degradation. In this report, we investigated the QDs concentration related fluorescent quenching and the positive role of light scatterers in light-conversion efficiency. A QDs/SiO2-BN inorganic assembly nanocomposite (QDAs) was fabricated, which provided enhanced light scattering, high thermal conductivity, and moisture protection for QDs under illumination. Optical and thermal simulations were employed to investigate the optical and thermal behavior of the QDAs in on-chip LED package. The QDs converted LED (QCLEDs) demonstrate much lower operation temperature accompanied with largely improved efficiency and long-term stability.
{"title":"All-Inorganic Quantum Dot Nanocomposite for On-Chip LED Application","authors":"L. Zhang, C. Shen, R. An, C. Geng, J. Liu, S. Xu","doi":"10.1109/SSLChinaIFWS54608.2021.9675158","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675158","url":null,"abstract":"Quantum dots (QDs) have recently attracted intensive research interest with their advantage optical properties and easy processing in micro/mini-LED applications. However, integrating QDs into LED packaging still faces critical challenges of fluorescent quenching and thermal-induced degradation. In this report, we investigated the QDs concentration related fluorescent quenching and the positive role of light scatterers in light-conversion efficiency. A QDs/SiO2-BN inorganic assembly nanocomposite (QDAs) was fabricated, which provided enhanced light scattering, high thermal conductivity, and moisture protection for QDs under illumination. Optical and thermal simulations were employed to investigate the optical and thermal behavior of the QDAs in on-chip LED package. The QDs converted LED (QCLEDs) demonstrate much lower operation temperature accompanied with largely improved efficiency and long-term stability.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"58 1","pages":"100-104"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76725302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675193
Shanshan Zeng, Wentao Hao, Ya Guo, Yuechao Wang, Jianfeng Fu, Guangming Wang, Jianqi Cai
Ergonomic effects of ambient light had been extensively studied, and the effects of dynamic ambient light attracted interests of an increasing number of researchers. However, related researches on dynamic light were generally focused on the non-visual effects, such as circadian rhythm, emotion, and cognition. Furthermore, studies on dynamic screen brightness were seldom reported. In this paper, we compared the effects of screens with constant and dynamic brightness respectively on ocular physiological parameters, and found that ocular physiological variations in dynamic screen brightness were significantly lower than those in constant screen brightness, suggesting that dynamic brightness caused less ocular fatigue. The mechanism of the ocular fatigue reduction of dynamic screen brightness was likely to be the activation of brightness-sensitive neurons in primary visual cortex.
{"title":"Ocular physiological responses to dynamic and constant screen brightness","authors":"Shanshan Zeng, Wentao Hao, Ya Guo, Yuechao Wang, Jianfeng Fu, Guangming Wang, Jianqi Cai","doi":"10.1109/SSLChinaIFWS54608.2021.9675193","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675193","url":null,"abstract":"Ergonomic effects of ambient light had been extensively studied, and the effects of dynamic ambient light attracted interests of an increasing number of researchers. However, related researches on dynamic light were generally focused on the non-visual effects, such as circadian rhythm, emotion, and cognition. Furthermore, studies on dynamic screen brightness were seldom reported. In this paper, we compared the effects of screens with constant and dynamic brightness respectively on ocular physiological parameters, and found that ocular physiological variations in dynamic screen brightness were significantly lower than those in constant screen brightness, suggesting that dynamic brightness caused less ocular fatigue. The mechanism of the ocular fatigue reduction of dynamic screen brightness was likely to be the activation of brightness-sensitive neurons in primary visual cortex.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"5 1","pages":"158-161"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74229284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675261
Fan Li, Yubo Wang, Chenjie Yuan, Ruize Sun, Chengmurong Ding, Miao Cui, Yinchao Zhao, H. Wen, Wen Liu
The bidirectional switch has great potential in AC-AC matrix converter and other power electronics areas. In this work, the TCAD simulation of p-GaN/AlGaN/GaN High Electron Mobility Transistor (HEMT)dual-gate bidirectional switch is systematically carried out. The static I-V characteristics and the bidirectional conduction ability are presented to prove the successful establishment of our model. These results are consistent with the trends from previous literature. By changing the separation distance between two gates when the device's total size remains the same, the off-state breakdown voltage is improved to 1571V under gate voltage of 0V. The simulation points out the direction to improve the performance of monolithic GaN bidirectional switches in high voltage applications.
{"title":"TCAD Simulation of Dual-Gate p-GaN/AlGaN/GaN HEMT Bidirectional Switch","authors":"Fan Li, Yubo Wang, Chenjie Yuan, Ruize Sun, Chengmurong Ding, Miao Cui, Yinchao Zhao, H. Wen, Wen Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675261","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675261","url":null,"abstract":"The bidirectional switch has great potential in AC-AC matrix converter and other power electronics areas. In this work, the TCAD simulation of p-GaN/AlGaN/GaN High Electron Mobility Transistor (HEMT)dual-gate bidirectional switch is systematically carried out. The static I-V characteristics and the bidirectional conduction ability are presented to prove the successful establishment of our model. These results are consistent with the trends from previous literature. By changing the separation distance between two gates when the device's total size remains the same, the off-state breakdown voltage is improved to 1571V under gate voltage of 0V. The simulation points out the direction to improve the performance of monolithic GaN bidirectional switches in high voltage applications.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"105 1","pages":"49-52"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89155632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675145
Caozheng Zhang, Libo Zheng, Jinghao Yu, Pengfei Ye, Yi Liu
With the rapid development of information technology, the brisk pace of cloud computing platform technology (such as Internet of Things, cloud computing, big data) is now profoundly reshaping our lifestyle. Among this great revolution, wireless communication based on radio-frequency devices (e.g. Phase-Locked Loop with high-performance VCO) plays a vital role in the terminal application. Here, a wideband cross-coupled inductance-capacitance (LC) voltage-controlled oscillator (VCO) is proposed. The Multi-Finger technique is utilized to reduce phase noise of the VCO. The phase noise depends on the Q-factor of the device. The parasitic resistance of the inductor increases due to skin and proximity effect in high frequency. In this study, we use a multi-finger inductor to improve Q-factor. Phase noise is 102.57 dBc/Hz at 1-MHz offset from 11.2 GHz oscillation frequency and the static current is 0.9 mA from 1.2 V supply voltage while the frequency tuning range is 29.0%, indicating the great potential for the communication application.
{"title":"Low-Phase-Noise and Low-Power Wideband VCO Optimization Using Multi-Finger Technique","authors":"Caozheng Zhang, Libo Zheng, Jinghao Yu, Pengfei Ye, Yi Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675145","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675145","url":null,"abstract":"With the rapid development of information technology, the brisk pace of cloud computing platform technology (such as Internet of Things, cloud computing, big data) is now profoundly reshaping our lifestyle. Among this great revolution, wireless communication based on radio-frequency devices (e.g. Phase-Locked Loop with high-performance VCO) plays a vital role in the terminal application. Here, a wideband cross-coupled inductance-capacitance (LC) voltage-controlled oscillator (VCO) is proposed. The Multi-Finger technique is utilized to reduce phase noise of the VCO. The phase noise depends on the Q-factor of the device. The parasitic resistance of the inductor increases due to skin and proximity effect in high frequency. In this study, we use a multi-finger inductor to improve Q-factor. Phase noise is 102.57 dBc/Hz at 1-MHz offset from 11.2 GHz oscillation frequency and the static current is 0.9 mA from 1.2 V supply voltage while the frequency tuning range is 29.0%, indicating the great potential for the communication application.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"114 1","pages":"61-64"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87946839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Watté, G. van Hees, R. Engelen, W. V. van Driel, Tianfu Chen
Reliability of electronic drivers, or systems, is crucial for the business of Signify. We manufacture and sell more than a million drivers per year. Field returns taught us what failure modes are important, but this is not sufficient to provide lifetime claims for our products. Being in this business for almost a century, in order to provide detailed lifetime claims, we have established an internal reliability tool. This tool provides our designers the correct information for flawless driver development. The specially developed Electronics Reliability Tool (ERT) uses on the one hand FIT tables provided by handbooks like e.g., Telcordia and on the other hand also considers wear-out mechanisms due to e.g., lightning strikes. Validation and verification of our predictions is performed by collecting sold quantities, field returns, do extensive failure analysis and compare these values with calculated ones. Each internally designed driver is subjected to an ERT calculation. The forecasted lifetime is used as a yard stick to witness the drivers' targeted lifetime. In our presentation we will demonstrate the tool. In this paper, we describe details of how ERT calculates failure rates. We will also present the comparison between field performance and calculated values of our electronic drivers.
{"title":"Reliability of Electronic Drivers: An Industrial Approach","authors":"P. Watté, G. van Hees, R. Engelen, W. V. van Driel, Tianfu Chen","doi":"10.1115/ipack2021-72293","DOIUrl":"https://doi.org/10.1115/ipack2021-72293","url":null,"abstract":"Reliability of electronic drivers, or systems, is crucial for the business of Signify. We manufacture and sell more than a million drivers per year. Field returns taught us what failure modes are important, but this is not sufficient to provide lifetime claims for our products. Being in this business for almost a century, in order to provide detailed lifetime claims, we have established an internal reliability tool. This tool provides our designers the correct information for flawless driver development. The specially developed Electronics Reliability Tool (ERT) uses on the one hand FIT tables provided by handbooks like e.g., Telcordia and on the other hand also considers wear-out mechanisms due to e.g., lightning strikes. Validation and verification of our predictions is performed by collecting sold quantities, field returns, do extensive failure analysis and compare these values with calculated ones. Each internally designed driver is subjected to an ERT calculation. The forecasted lifetime is used as a yard stick to witness the drivers' targeted lifetime. In our presentation we will demonstrate the tool. In this paper, we describe details of how ERT calculates failure rates. We will also present the comparison between field performance and calculated values of our electronic drivers.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"101 1","pages":"246-249"},"PeriodicalIF":0.0,"publicationDate":"2021-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80388833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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