Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675190
Lyu Tiangang, Kuangang Fan, Lyu Henan, Wang Yuefei, Liu Xiujuan
This paper focuses on the design and implementation of dynamic light regulation function of plant light system under intelligent plant culture control system based on industrial Internet of Things technology. The plant lighting system consists of several groups of LED light sources with different wavelengths, multi-channel NUMERICAL control power management IC and peripheral circuits, which together with other terminal equipment, terminal master control board, gateway, server, application end Web/APP, constitute the plant culture system. This project provides an equipment and control method for plant cultivation in a fully artificial environment. The method can achieve precise and dynamic control of the irradiance, photoperiod, and spectral distribution of the LED lighting system according to plant growth cycle information and user needs. The feature of this technology is that it can highly simulate the changing laws of the light environment in nature, and it can also customize the light formula according to plant preferences.
{"title":"Design and Implementation of Dynamic Regulation Function of Artificial Light Plant Lighting System","authors":"Lyu Tiangang, Kuangang Fan, Lyu Henan, Wang Yuefei, Liu Xiujuan","doi":"10.1109/SSLChinaIFWS54608.2021.9675190","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675190","url":null,"abstract":"This paper focuses on the design and implementation of dynamic light regulation function of plant light system under intelligent plant culture control system based on industrial Internet of Things technology. The plant lighting system consists of several groups of LED light sources with different wavelengths, multi-channel NUMERICAL control power management IC and peripheral circuits, which together with other terminal equipment, terminal master control board, gateway, server, application end Web/APP, constitute the plant culture system. This project provides an equipment and control method for plant cultivation in a fully artificial environment. The method can achieve precise and dynamic control of the irradiance, photoperiod, and spectral distribution of the LED lighting system according to plant growth cycle information and user needs. The feature of this technology is that it can highly simulate the changing laws of the light environment in nature, and it can also customize the light formula according to plant preferences.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"3 1","pages":"211-215"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80059902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675273
N. Gao, Y. L. Fang, Z. R. Zhang, J. Y. Yin, B. Wang, J. Li, W. L. Lu, C. L. Niu, H. Chen
High quality AlGaN/GaN HEMT material was grown on the 4-inch GaN substrate by metal-organic chemical vapor deposition (MOCVD). An alternation gas model of ammonia/hydrogen (NH3/H2) mixed gas and H2 gas was employed for the thermal treatment of GaN substrate. Atomic force microscope (AFM) shows straight-step morphology on the surface of the material. The high-resolution X-ray diffractometer (HRXRD) indicates that the full widths at half maximum (FWHM) values of AlGaN/GaN HEMT material for (002) and (102) planes are 48.9 arcsecs and 43.5 arcsecs in the center, respectively. The contactless Hall test results show that the AlGaN/GaN HEMT material has a two dimensional electron gas (2DEG) mobility of 2159 cm2/ V. s and 2DEG density of 8.89 ×1012cm−2, indicating that the homo-epitaxial AlGaN/GaN HEMT material has high quality and good electrical performance.
采用金属有机化学气相沉积(MOCVD)技术在4英寸GaN衬底上生长出高质量的AlGaN/GaN HEMT材料。采用氨/氢(NH3/H2)混合气体和H2气体交替气体模型对GaN衬底进行热处理。原子力显微镜(AFM)显示了材料表面的直阶形貌。高分辨率x射线衍射仪(HRXRD)表明，AlGaN/GaN HEMT材料在(002)和(102)平面的半最大全宽(FWHM)值分别为48.9 arcsecs和43.5 arcsecs。无接触霍尔测试结果表明，该材料的二维电子气迁移率为2159 cm2/ V. s，二维电子气密度为8.89 ×1012cm−2，表明该材料具有良好的电学性能和高质量。
{"title":"High Quality AlGaN/GaN HEMT Homo-epitaxy on 4-inch Homebred GaN Substrate by MOCVD","authors":"N. Gao, Y. L. Fang, Z. R. Zhang, J. Y. Yin, B. Wang, J. Li, W. L. Lu, C. L. Niu, H. Chen","doi":"10.1109/SSLChinaIFWS54608.2021.9675273","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675273","url":null,"abstract":"High quality AlGaN/GaN HEMT material was grown on the 4-inch GaN substrate by metal-organic chemical vapor deposition (MOCVD). An alternation gas model of ammonia/hydrogen (NH3/H2) mixed gas and H2 gas was employed for the thermal treatment of GaN substrate. Atomic force microscope (AFM) shows straight-step morphology on the surface of the material. The high-resolution X-ray diffractometer (HRXRD) indicates that the full widths at half maximum (FWHM) values of AlGaN/GaN HEMT material for (002) and (102) planes are 48.9 arcsecs and 43.5 arcsecs in the center, respectively. The contactless Hall test results show that the AlGaN/GaN HEMT material has a two dimensional electron gas (2DEG) mobility of 2159 cm2/ V. s and 2DEG density of 8.89 ×1012cm−2, indicating that the homo-epitaxial AlGaN/GaN HEMT material has high quality and good electrical performance.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"6 1","pages":"82-85"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75486884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The popularization of display technology resulted in significant conveniences yet several drawbacks meanwhile. Threats to visual health caused by displaying screen were generally from mismatch between screen brightness and ambient lighting illuminance. Recent researchers on smartphones developed various methods to automatically modulate the screen brightness dependent on ambient lighting illuminance, whereas the modulated screen brightness values were perceived to be lower than needed. In this study, we compared the effects among various smartphone-brightness values on ocular physiological parameters in different ambient lighting illuminance values. We found that the automatically-modulated brightness of smartphones were improper for human eyes due to the lack of enough photons to activate necessary ocular contrast, and the brightness values should be increased by 10-20% to protect ocular function and keep visual health.
{"title":"Appropriate Screen Brightness for Ambient Lighting Illuminance","authors":"Shanshan Zeng, Wentao Hao, Ya Guo, Guanheng Li, Wenxue Li, Caiqin Chen, Zuqiang Zhang, Deshun Qu, Shengli Zhang, Xingxing Qin, Jianqi Cai","doi":"10.1109/SSLChinaIFWS54608.2021.9675263","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675263","url":null,"abstract":"The popularization of display technology resulted in significant conveniences yet several drawbacks meanwhile. Threats to visual health caused by displaying screen were generally from mismatch between screen brightness and ambient lighting illuminance. Recent researchers on smartphones developed various methods to automatically modulate the screen brightness dependent on ambient lighting illuminance, whereas the modulated screen brightness values were perceived to be lower than needed. In this study, we compared the effects among various smartphone-brightness values on ocular physiological parameters in different ambient lighting illuminance values. We found that the automatically-modulated brightness of smartphones were improper for human eyes due to the lack of enough photons to activate necessary ocular contrast, and the brightness values should be increased by 10-20% to protect ocular function and keep visual health.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"46 1","pages":"162-164"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77275835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675215
Weisheng Wang, Ang Li, Miao Cui, H. Wen, Wen Liu
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMT) in enhancement (E-) and depletion (D-) modes are monolithically integrated on an intelligent integrated circuit (IC) platform to form the basic circuit modules-the comparators. The comparator circuit operates over different voltage ranges by varying the DIE-mode type of the differential input pair. The transfer characteristics of E/D mode MIS-HEMT comparators are shown at room temperature and high temperatures up to 200°C. The results indicate that the proposed comparators with different E/D operating modes correspond to different operating ranges, implementing logic conversion for −8 to 0 V and 0 to 5 V, respectively. The results of these comparators demonstrate the feasibility and flexibility of the structure and provide additional options for monolithic integration for the all-GaN power platform.
{"title":"Monolithic Comparators using E/D-mode AlGaN/GaN MIS-HEMTs for High-temperature Applications","authors":"Weisheng Wang, Ang Li, Miao Cui, H. Wen, Wen Liu","doi":"10.1109/SSLChinaIFWS54608.2021.9675215","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675215","url":null,"abstract":"AlGaN/GaN metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMT) in enhancement (E-) and depletion (D-) modes are monolithically integrated on an intelligent integrated circuit (IC) platform to form the basic circuit modules-the comparators. The comparator circuit operates over different voltage ranges by varying the DIE-mode type of the differential input pair. The transfer characteristics of E/D mode MIS-HEMT comparators are shown at room temperature and high temperatures up to 200°C. The results indicate that the proposed comparators with different E/D operating modes correspond to different operating ranges, implementing logic conversion for −8 to 0 V and 0 to 5 V, respectively. The results of these comparators demonstrate the feasibility and flexibility of the structure and provide additional options for monolithic integration for the all-GaN power platform.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"57 1","pages":"33-35"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85224871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675164
L. Sang, Wenting Zhang, Yunlai An, Liang Wang, Yanfang Chen, Jialin Li, Yujie Du, Rui Liu, X. Niu, Xiaolei Yang, Shiyan Li, Gang Chen, Xinling Tang, J. Wu, Fei Yang
Silicon carbide (SiC) is a widely used wide bandgap semiconductor which has the advantages of high voltage, high current capacity, low loss, fast heat dissipation and so on. In this paper, we review recent progress in the high-voltage SiC power electronic devices, including schottky barrier diode (SBD), PiN diode, junction barrier schottky diode (JBS), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and SiC power module. Moreover futher applications and perspectives of high voltage SiC devices is discussed.
{"title":"Development of high-voltage SiC Power Electronic Devices","authors":"L. Sang, Wenting Zhang, Yunlai An, Liang Wang, Yanfang Chen, Jialin Li, Yujie Du, Rui Liu, X. Niu, Xiaolei Yang, Shiyan Li, Gang Chen, Xinling Tang, J. Wu, Fei Yang","doi":"10.1109/SSLChinaIFWS54608.2021.9675164","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675164","url":null,"abstract":"Silicon carbide (SiC) is a widely used wide bandgap semiconductor which has the advantages of high voltage, high current capacity, low loss, fast heat dissipation and so on. In this paper, we review recent progress in the high-voltage SiC power electronic devices, including schottky barrier diode (SBD), PiN diode, junction barrier schottky diode (JBS), metal oxide semiconductor field effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), and SiC power module. Moreover futher applications and perspectives of high voltage SiC devices is discussed.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"1 1","pages":"17-24"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78568609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the rapid development of informatization and intelligentialize of vehicles, solid-state-lighting is becoming more and more important in automotive lighting. LED still have some problems in lighting, such as low light intensity, thermal attenuation and short projecting distance. Laser lighting is becoming one of substitutes as the light source for automotive lighting. Here, laser light sources based on self-frequency-doubled (SFD) crystal were investigated. Especially for white laser light source, a mockup was made to verify the realistic of this approach, and the test results showed that the SFD white laser light source, combined with a blue laser diode and an SFD amber laser light source, was obtained successfully. The tested white laser light source's proportion of blue and amber is 1 (440nm): 1.7 (570nm), with a total output optical power 4W. In addition, a road projection lamp based on SFD green laser, compared with LED light source at same output optical power level, mock-up sample's were made and tested to further verify the feasibility of SFD laser applied on automotive lighting, and the optical simulation and test results were also demonstrated. Results show that SFD laser light source will play an important role in the future lighting market for automotive.
{"title":"Self-Frequency-Doubled Crystal Laser Light Sources and its Potential Applications in Automotive Lighting","authors":"Ru Li, Xianliang Zheng, Haohai Yu, Zhen Long, Zhanggui Hu, Zhaohui Li, Jin Chang, Limin Huang, Liwei Yin","doi":"10.1109/SSLChinaIFWS54608.2021.9675198","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675198","url":null,"abstract":"With the rapid development of informatization and intelligentialize of vehicles, solid-state-lighting is becoming more and more important in automotive lighting. LED still have some problems in lighting, such as low light intensity, thermal attenuation and short projecting distance. Laser lighting is becoming one of substitutes as the light source for automotive lighting. Here, laser light sources based on self-frequency-doubled (SFD) crystal were investigated. Especially for white laser light source, a mockup was made to verify the realistic of this approach, and the test results showed that the SFD white laser light source, combined with a blue laser diode and an SFD amber laser light source, was obtained successfully. The tested white laser light source's proportion of blue and amber is 1 (440nm): 1.7 (570nm), with a total output optical power 4W. In addition, a road projection lamp based on SFD green laser, compared with LED light source at same output optical power level, mock-up sample's were made and tested to further verify the feasibility of SFD laser applied on automotive lighting, and the optical simulation and test results were also demonstrated. Results show that SFD laser light source will play an important role in the future lighting market for automotive.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"26 1","pages":"122-124"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90720294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675264
Yihui Zhang, Pengfei Wu, M. Cui, Zhongyuan Chen, Yinghan Liu, Jinyuan Li
With the acceleration of energy transformation and the development of power grid equipment technology, the capacity and voltage level of flexible DC transmission project are gradually improved. There is an urgent need for the support of power semiconductor IGBT with higher voltage level and larger capacity. As the press-pack IGBT has two heat dissipation surfaces, and the heat dissipation power of each heat dissipation surface is determined by the proportion of double-sided thermal resistance, the existing test methods cannot determine the heat dissipation power of both sides before obtaining the thermal resistance value. Firstly, this paper summarizes the existing welding and press-pack thermal resistance test methods, analyzes the composition of press-pack IGBT double-sided thermal resistance, puts forward the thermal resistance test method based on the equivalent measurement of press-pack IGBT double-sided heat flux, realizes the synchronous measurement of asymmetric press-pack IGBT double-sided thermal resistance, and studies the influence law of pressure on IGBT thermal resistance characteristics based on the test platform.
{"title":"Research and Application of Double-sided Thermal Resistance Test Method for Press-pack IGBT","authors":"Yihui Zhang, Pengfei Wu, M. Cui, Zhongyuan Chen, Yinghan Liu, Jinyuan Li","doi":"10.1109/SSLChinaIFWS54608.2021.9675264","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675264","url":null,"abstract":"With the acceleration of energy transformation and the development of power grid equipment technology, the capacity and voltage level of flexible DC transmission project are gradually improved. There is an urgent need for the support of power semiconductor IGBT with higher voltage level and larger capacity. As the press-pack IGBT has two heat dissipation surfaces, and the heat dissipation power of each heat dissipation surface is determined by the proportion of double-sided thermal resistance, the existing test methods cannot determine the heat dissipation power of both sides before obtaining the thermal resistance value. Firstly, this paper summarizes the existing welding and press-pack thermal resistance test methods, analyzes the composition of press-pack IGBT double-sided thermal resistance, puts forward the thermal resistance test method based on the equivalent measurement of press-pack IGBT double-sided heat flux, realizes the synchronous measurement of asymmetric press-pack IGBT double-sided thermal resistance, and studies the influence law of pressure on IGBT thermal resistance characteristics based on the test platform.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"217 1","pages":"235-238"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76981084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675224
Kailin Zhang, M. Cai, Minghui Yun, Lei Song, Daoguo Yang
SiC power devices are widely used in high frequency and high voltage circuits because of their excellent properties such as high breakdown field strength and high thermal conductivity. However, their packaging and loop stray inductance affect the work of the devices seriously in high frequency and high voltage environment seriously. The main effects are switching oscillation, EMI, additional power loss and equipment stress. In this paper, the parallel SiC Power Module (SKM200GB12F4SiC3) is analyzed by using ANSYS Q3D software. Based on the two port scattering (S) parameter's test method, the parasitic inductance of each port is extracted and compared with the experimental results. The influence of the physical structure on the parasitic inductance of SiC Power module is analyzed. By comparing the experimental data with the simulation data, it is concluded that the parasitic inductance of the grid of the lower half bridge is more than twice as much as that of the upper half bridge, which is the maximum of all parasitic inductance parameters. It is the main factor affecting the parasitic parameters. The method to improve the parasitic parameters of the module is given.
{"title":"Comparison experiment of Parasitic Inductance Extraction of power module based on ANSYS Q3D software","authors":"Kailin Zhang, M. Cai, Minghui Yun, Lei Song, Daoguo Yang","doi":"10.1109/SSLChinaIFWS54608.2021.9675224","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675224","url":null,"abstract":"SiC power devices are widely used in high frequency and high voltage circuits because of their excellent properties such as high breakdown field strength and high thermal conductivity. However, their packaging and loop stray inductance affect the work of the devices seriously in high frequency and high voltage environment seriously. The main effects are switching oscillation, EMI, additional power loss and equipment stress. In this paper, the parallel SiC Power Module (SKM200GB12F4SiC3) is analyzed by using ANSYS Q3D software. Based on the two port scattering (S) parameter's test method, the parasitic inductance of each port is extracted and compared with the experimental results. The influence of the physical structure on the parasitic inductance of SiC Power module is analyzed. By comparing the experimental data with the simulation data, it is concluded that the parasitic inductance of the grid of the lower half bridge is more than twice as much as that of the upper half bridge, which is the maximum of all parasitic inductance parameters. It is the main factor affecting the parasitic parameters. The method to improve the parasitic parameters of the module is given.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"33 1","pages":"58-60"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77281588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675249
Yun Zhao, Jianfei Dong
Anti-microbial light therapies have been proven to be effective in treating various diseases caused by microbial infection. The existing literature has been mainly devoted to studying the effect of various light dosages on inhibiting microbes. Studying the safety of light therapies to normal host cells, especially via in vivo experiments, has not yet attracted much attention. In this work, we extend our previous study on evaluating the treatment efficacy based on histological image data to the examination of the treatment safety by blue LED light. Specifically, the anti-microbial light experiments using 415-nm-wavelength LED light were performed on BALB/c mice, whose skin was infected by Candida albicans (C. albicans), which is a common pathogenic fungal species. The tissue sections of the experimental animals were processed by TUNEL staining for examining the treatment safety. The apoptosis rates of the epithelial cells before and after the light treatment were extracted from the histological data, and tested. The results showed that the host cells were not significantly inhibited by the light, whose dosage was enough to significantly inhibit the fungi. Moreover, to discover the cytotoxic effect of the light on the fungal cells, the induced intracellular reactive oxygen species (ROS) was also measured. The increase in the ROS levels due to the light stimulation was found to be significant, as tested against those in the control group that was not treated by the light. Overall, the results verified the safety of the anti-microbial therapy by the 415-nm-wavelength LED light.
{"title":"Histological Data-Based Examination of the Safety of Anti-microbial Light Therapies","authors":"Yun Zhao, Jianfei Dong","doi":"10.1109/SSLChinaIFWS54608.2021.9675249","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675249","url":null,"abstract":"Anti-microbial light therapies have been proven to be effective in treating various diseases caused by microbial infection. The existing literature has been mainly devoted to studying the effect of various light dosages on inhibiting microbes. Studying the safety of light therapies to normal host cells, especially via in vivo experiments, has not yet attracted much attention. In this work, we extend our previous study on evaluating the treatment efficacy based on histological image data to the examination of the treatment safety by blue LED light. Specifically, the anti-microbial light experiments using 415-nm-wavelength LED light were performed on BALB/c mice, whose skin was infected by Candida albicans (C. albicans), which is a common pathogenic fungal species. The tissue sections of the experimental animals were processed by TUNEL staining for examining the treatment safety. The apoptosis rates of the epithelial cells before and after the light treatment were extracted from the histological data, and tested. The results showed that the host cells were not significantly inhibited by the light, whose dosage was enough to significantly inhibit the fungi. Moreover, to discover the cytotoxic effect of the light on the fungal cells, the induced intracellular reactive oxygen species (ROS) was also measured. The increase in the ROS levels due to the light stimulation was found to be significant, as tested against those in the control group that was not treated by the light. Overall, the results verified the safety of the anti-microbial therapy by the 415-nm-wavelength LED light.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"102 1","pages":"169-172"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78902033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-06DOI: 10.1109/SSLChinaIFWS54608.2021.9675244
Congshan Dai, Nuoyi Li, Ali Hassan Shah, Yandan Lin
In pace with the development of modern society, the time people spent in the office has extended. This experiment explored human perception and preferences of evening office lighting. Two kinds of LED with three color temperatures were selected: ordinary LED and high color rendering LED, under 2700K,4000K, and 5000K. Ten subjects completed the evaluation of mood, preference, and color appearance in 6 environments (3 CCT *2 spectra). By analyzing people's ratings under the real-office environment, we found that high CCT generally improved subjects' positive ratings with the lighting environment but also will increase the tense level, while Ra didn't show significant influence.
{"title":"Human perception and preferences of evening office lighting in terms of the LED spectrum","authors":"Congshan Dai, Nuoyi Li, Ali Hassan Shah, Yandan Lin","doi":"10.1109/SSLChinaIFWS54608.2021.9675244","DOIUrl":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675244","url":null,"abstract":"In pace with the development of modern society, the time people spent in the office has extended. This experiment explored human perception and preferences of evening office lighting. Two kinds of LED with three color temperatures were selected: ordinary LED and high color rendering LED, under 2700K,4000K, and 5000K. Ten subjects completed the evaluation of mood, preference, and color appearance in 6 environments (3 CCT *2 spectra). By analyzing people's ratings under the real-office environment, we found that high CCT generally improved subjects' positive ratings with the lighting environment but also will increase the tense level, while Ra didn't show significant influence.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"28 1","pages":"194-197"},"PeriodicalIF":0.0,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80741478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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