Cancer immunotherapy, which harnesses the power of the immune system, has shown immense promise in the fight against malignancies. Messenger RNA (mRNA) stands as a versatile instrument in this context, with its capacity to encode tumor-associated antigens (TAAs), immune cell receptors, cytokines, and antibodies. Nevertheless, the inherent structural instability of mRNA requires the development of effective delivery systems. Lipid nanoparticles (LNPs) have emerged as significant candidates for mRNA delivery in cancer immunotherapy, providing both protection to the mRNA and enhanced intracellular delivery efficiency. In this review, we offer a comprehensive summary of the recent advancements in LNP-based mRNA delivery systems, with a focus on strategies for optimizing the design and delivery of mRNA-encoded therapeutics in cancer treatment. Furthermore, we delve into the challenges encountered in this field and contemplate future perspectives, aiming to improve the safety and efficacy of LNP-based mRNA cancer immunotherapies.
Unusual electrical transport properties associated with weak or strong localization are sometimes found in disordered electronic materials. Here, we report experimental observation of a crossover of electronic behavior from weak localization to enhanced weak localization due to the spatial influence of disorder induced by ZrO2 nanopillars in (La2/3Sr1/3MnO3)1−x:(ZrO2)x (x = 0, 0.2, and 0.3) nanocomposite films. The spatial strain regions, identified by scanning transmission electron microscopy and high-resolution x-ray diffraction, induce a coexistence of two-dimentional (2D) and three-dimentional (3D) localization and switches to typical 2D localization with increasing density of ZrO2 pillars due to length scale confinement, which interestingly accords with enhancing vertically interfacial strain. Based on the excellent agreement of our experimental results with one-parameter scaling theory of localization, the enhanced weak localization exists in metal range close to the fixed point. These films provide a tunable experimental model for studying localization in particular the transition regime by appropriate choice of the second epitaxial phase.
The study of strong coupling between light and matter has gained significant attention in recent years due to its potential applications in diverse fields, including artificial light harvesting, ultraefficient polariton lasing, and quantum information processing. Plasmonic cavities are a compelling alternative of conventional photonic resonators, enabling ultracompact polaritonic systems to operate at room temperature. This review focuses on colloidal metal nanoparticles, highlighting their advantages as plasmonic cavities in terms of their facile synthesis, tunable plasmonic properties, and easy integration with excitonic materials. We explore recent examples of strong coupling in single nanoparticles, dimers, nanoparticle-on-a-mirror configurations, and other types of nanoparticle-based resonators. These systems are coupled with an array of excitonic materials, including atomic emitters, semiconductor quantum dots, two-dimensional materials, and perovskites. In the concluding section, we offer perspectives on the future of strong coupling research in nanoparticle systems, emphasizing the challenges and potentials that lie ahead. By offering a thorough understanding of the current state of research in this field, we aim to inspire further investigations and advances in the study of strongly coupled nanoparticle systems, ultimately unlocking new avenues in nanophotonic applications.
Memristors, owing to their uncomplicated structure and resemblance to biological synapses, are predicted to see increased usage in the domain of artificial intelligence. Additionally, to augment the capacity for multilayer data storage in high-density memory applications, meticulous regulation of quantized conduction with an extremely low transition energy is required. In this work, an a-HfSiOx-based memristor was grown through atomic layer deposition (ALD) and investigated for its electrical and biological properties for use in multilevel switching memory and neuromorphic computing systems. The crystal structure and chemical distribution of the HfSiOx/TaN layers were analyzed using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The Pt/a-HfSiOx/TaN memristor was confirmed by transmission electron microscopy (TEM) and showed analog bipolar switching behavior with high endurance stability (1000 cycles), long data retention performance (104 s), and uniform voltage distribution. Its multilevel capability was demonstrated by restricting current compliance (CC) and stopping the reset voltage. The memristor exhibited synaptic properties, such as short-term plasticity, excitatory postsynaptic current (EPSC), spiking-rate-dependent plasticity (SRDP), post-tetanic potentiation (PTP), and paired-pulse facilitation (PPF). Furthermore, it demonstrated 94.6% pattern accuracy in neural network simulations. Thus, a-HfSiOx-based memristors have great potential for use in multilevel memory and neuromorphic computing systems.
The thermoelectric performance of SnSe strongly depends on its low-energy electron band structure that provides high density of states in a narrow energy window due to the multi-valley valence band maximum (VBM). Angle-resolved photoemission spectroscopy measurements, in conjunction with first-principles calculations, reveal that the binding energy of the VBM of SnSe is tuned by the population of Sn vacancy, which is determined by the cooling rate during the sample growth. The VBM shift follows precisely the behavior of the thermoelectric power factor, while the effective mass is barely modified upon changing the population of Sn vacancies. These findings indicate that the low-energy electron band structure is closely correlated with the high thermoelectric performance of hole-doped SnSe, providing a viable route toward engineering the intrinsic defect-induced thermoelectric performance via the sample growth condition without an additional ex-situ process.
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