首页 > 最新文献

Advanced Theory and Simulations最新文献

英文 中文
Understanding Heavy and Light Hole Transport Dynamics in Diamond Through Monte Carlo Simulations and Experiments 通过蒙特卡罗模拟和实验了解金刚石中的重、轻空穴输运动力学
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-24 DOI: 10.1002/adts.202502259
Rina Yamazaki, Jan Isberg, Nattakarn Suntornwipat, Saman Majdi

Understanding the charge carrier properties and the effects of local scattering mechanisms in semiconductor materials is essential to realize reliable electronic devices. In this study, Monte Carlo simulations on hole transport in diamond were performed including multiple scattering mechanisms and the results are compared with experimental data observed by hole time-of-flight (ToF) measurements. By incorporating interband scattering, the deformation potential for acoustic phonon scattering was extracted. Furthermore, the redistribution of the heavy and light hole populations was recorded, and their dynamic behavior was analyzed. Moreover, detailed analysis uncovered distinct transport behaviors under complex scattering mechanisms, predominantly driven by optical phonon interactions, consistent with experimental observations.

了解半导体材料中的载流子性质和局部散射机制对实现可靠的电子器件至关重要。本文采用蒙特卡罗方法对金刚石中的空穴输运进行了多种散射机制的模拟,并将模拟结果与空穴飞行时间(ToF)测量结果进行了比较。结合带间散射,提取声子散射的变形势。此外,还记录了重孔种群和轻孔种群的再分布情况,并分析了它们的动态行为。此外,详细的分析揭示了复杂散射机制下不同的输运行为,主要由光学声子相互作用驱动,与实验观察一致。
{"title":"Understanding Heavy and Light Hole Transport Dynamics in Diamond Through Monte Carlo Simulations and Experiments","authors":"Rina Yamazaki,&nbsp;Jan Isberg,&nbsp;Nattakarn Suntornwipat,&nbsp;Saman Majdi","doi":"10.1002/adts.202502259","DOIUrl":"10.1002/adts.202502259","url":null,"abstract":"<p>Understanding the charge carrier properties and the effects of local scattering mechanisms in semiconductor materials is essential to realize reliable electronic devices. In this study, Monte Carlo simulations on hole transport in diamond were performed including multiple scattering mechanisms and the results are compared with experimental data observed by hole time-of-flight (ToF) measurements. By incorporating interband scattering, the deformation potential for acoustic phonon scattering was extracted. Furthermore, the redistribution of the heavy and light hole populations was recorded, and their dynamic behavior was analyzed. Moreover, detailed analysis uncovered distinct transport behaviors under complex scattering mechanisms, predominantly driven by optical phonon interactions, consistent with experimental observations.</p>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adts.202502259","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147292611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulating Electronic and Magnetic Properties of GeI2 Monolayer via Doping With Arsenic and Selenium: A First-Principles Study 砷和硒掺杂调制GeI2单层电子和磁性能的第一性原理研究
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-24 DOI: 10.1002/adts.202502046
Duy Khanh Nguyen, Nguyen Hai Ly, Chu Viet Ha, Nguyen The Toan, Thai Nam An, Jonathan Guerrero Sanchez, Do Minh Hoat
<div> <p>In this work, we propose novel doping approaches to induce <i>sp</i> magnetism in <span></span><math> <semantics> <msub> <mi>GeI</mi> <mn>2</mn> </msub> <annotation>${rm GeI}_{2}$</annotation> </semantics></math> monolayer. Pristine monolayer is a nonmagnetic 2D semiconductor with a relatively large indirect gap of 2.10 eV, whose Ge-I chemical bond is proven to exhibit both covalent and ionic characters. Arsenic (As) impurity induces the in-plane magnetic anisotropy (IMA) with total magnetic moments of 1.00 and 2.00 <span></span><math> <semantics> <msub> <mi>μ</mi> <mi>B</mi> </msub> <annotation>$mu _{B}$</annotation> </semantics></math> when doping at Ge (<span></span><math> <semantics> <msub> <mi>As</mi> <mrow> <mi>G</mi> <mi>e</mi> </mrow> </msub> <annotation>${rm As}_{Ge}$</annotation> </semantics></math>) and I (<span></span><math> <semantics> <msub> <mi>As</mi> <mi>I</mi> </msub> <annotation>${rm As}_{I}$</annotation> </semantics></math>) sublattices, respectively. The out-of-plane magnetic anisotropy (PMA) with overall magnetic moment of 2.00 <span></span><math> <semantics> <msub> <mi>μ</mi> <mi>B</mi> </msub> <annotation>$mu _{B}$</annotation> </semantics></math> is achieved by doping with Selenium (Se) atom at Ge site (<span></span><math> <semantics> <msub> <mi>Se</mi> <mrow> <mi>G</mi> <mi>e</mi> </mrow> </msub> <annotation>${rm Se}_{Ge}$</annotation> </semantics></math>), meanwhile the nonmagnetic nature of <span></span><math> <semantics> <msub> <mi>GeI</mi> <mn>2</mn> </msub> <annotation>${rm GeI}_{2}$</annotation> </semantics></math> monolayer is preserved when Se impurity is incorporated at I site (<span></span><math> <semantics> <msub> <mi>Se</mi> <mi>I</mi> </msub> <annotation>${rm Se}_{I}$</annotation> </semantics></math>). The PMA can be also induced by doping with pair As and Se atoms (pAs and pSe). Interestingly, the half-metallicity is obtained in all the magnetic doped <span></span><math> <semantics> <msub> <mi>
在这项工作中,我们提出了一种新的掺杂方法来诱导gei2 ${rm GeI}_{2}$单层的sp磁性。原始单层是一种非磁性二维半导体,其间接间隙较大,为2.10 eV,其Ge-I化学键被证明具有共价键和离子键的双重特性。砷(As)杂质在Ge (As G ${rm As}_{Ge}$)和I (As)处掺杂时,诱导出面内磁各向异性(IMA),总磁矩分别为1.00和2.00 μ B $mu _{B}$I ${rm As}_{I}$)子格。通过在Ge位掺杂硒(Se)原子(Se Ge ${rm Se}_{Ge}$),获得了总磁矩为2.00 μ B $mu _{B}$的面外磁各向异性(PMA);同时,在I位(Se I ${rm Se}_{I}$)掺入Se杂质后,gei2 ${rm GeI}_{2}$单层的非磁性得以保留。PMA也可以通过掺杂对As和Se原子(pAs和pSe)来诱导。有趣的是,所有的掺杂gei2 ${rm GeI}_{2}$体系都具有半金属丰度,其中杂质及其邻近原子主要产生磁性并调节电子性质。此外,砷和硒共掺杂可以显著减小单层带隙。在此,As G ${rm As}_{Ge}$ + Se I ${rm Se}_{I}$和As I ${rm As}_{I}$ + SeG ${rm Se}_{Ge}$掺杂构型决定了还原率分别为12.86%和50.48%。此外,我们的计算表明,掺杂在Ge亚晶格的杂质失去电荷,而掺杂在I亚晶格的杂质从宿主单层吸引电荷。我们的发现可能会引入有效的sp掺杂方法,使gei2 ${rm GeI}_{2}$单层适合自旋电子和光电子应用。
{"title":"Modulating Electronic and Magnetic Properties of GeI2 Monolayer via Doping With Arsenic and Selenium: A First-Principles Study","authors":"Duy Khanh Nguyen,&nbsp;Nguyen Hai Ly,&nbsp;Chu Viet Ha,&nbsp;Nguyen The Toan,&nbsp;Thai Nam An,&nbsp;Jonathan Guerrero Sanchez,&nbsp;Do Minh Hoat","doi":"10.1002/adts.202502046","DOIUrl":"10.1002/adts.202502046","url":null,"abstract":"&lt;div&gt;\u0000 \u0000 &lt;p&gt;In this work, we propose novel doping approaches to induce &lt;i&gt;sp&lt;/i&gt; magnetism in &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;GeI&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm GeI}_{2}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; monolayer. Pristine monolayer is a nonmagnetic 2D semiconductor with a relatively large indirect gap of 2.10 eV, whose Ge-I chemical bond is proven to exhibit both covalent and ionic characters. Arsenic (As) impurity induces the in-plane magnetic anisotropy (IMA) with total magnetic moments of 1.00 and 2.00 &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;μ&lt;/mi&gt;\u0000 &lt;mi&gt;B&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;$mu _{B}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; when doping at Ge (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;As&lt;/mi&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;G&lt;/mi&gt;\u0000 &lt;mi&gt;e&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm As}_{Ge}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;) and I (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;As&lt;/mi&gt;\u0000 &lt;mi&gt;I&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm As}_{I}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;) sublattices, respectively. The out-of-plane magnetic anisotropy (PMA) with overall magnetic moment of 2.00 &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;μ&lt;/mi&gt;\u0000 &lt;mi&gt;B&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;$mu _{B}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; is achieved by doping with Selenium (Se) atom at Ge site (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Se&lt;/mi&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;G&lt;/mi&gt;\u0000 &lt;mi&gt;e&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm Se}_{Ge}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;), meanwhile the nonmagnetic nature of &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;GeI&lt;/mi&gt;\u0000 &lt;mn&gt;2&lt;/mn&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm GeI}_{2}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt; monolayer is preserved when Se impurity is incorporated at I site (&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;Se&lt;/mi&gt;\u0000 &lt;mi&gt;I&lt;/mi&gt;\u0000 &lt;/msub&gt;\u0000 &lt;annotation&gt;${rm Se}_{I}$&lt;/annotation&gt;\u0000 &lt;/semantics&gt;&lt;/math&gt;). The PMA can be also induced by doping with pair As and Se atoms (pAs and pSe). Interestingly, the half-metallicity is obtained in all the magnetic doped &lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;semantics&gt;\u0000 &lt;msub&gt;\u0000 &lt;mi&gt;","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147288440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Sliding-Mode Control for High-Dynamic-Accuracy EHA in Exoskeleton Joint 外骨骼关节高动态精度EHA改进滑模控制
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-19 DOI: 10.1002/adts.202502026
Jianying Li, Sida Zhang, Xiaoyan Du, Enci Wang

To address the time-varying parameters, nonlinear friction, leakage, and load disturbances inherent to electro-hydrostatic actuator (EHA), and the exoskeleton robot's demands for handling strong coupling and achieving high trajectory accuracy, we design an adaptive variable-damping sliding-mode controller (ADV-SMC) that suppresses chattering while improving the dynamic response of the joint EHA. Because most existing studies overlook the higher-order characteristics of composite disturbances, this work incorporates an improved nonlinear extended disturbance observer (INEDOB) into the controller design. By constructing a novel surrogate function to circumvent the differentiability constraint of the saturation function, the INEDOB enables accurate estimation of time-varying external disturbances and their higher-order derivatives. On the basis of a rigorous stability proof, the effectiveness of the newly designed controller is further analyzed and validated. This integrated control scheme markedly enhances system robustness and trajectory-tracking accuracy, providing a new avenue for high-dynamic-precision control of exoskeleton robots.

为了解决电液静压作动器(EHA)固有的时变参数、非线性摩擦、泄漏和负载扰动,以及外骨骼机器人对处理强耦合和实现高轨迹精度的要求,设计了一种自适应变阻尼滑模控制器(ADV-SMC),该控制器在抑制抖振的同时提高了关节EHA的动态响应。由于大多数现有研究忽略了复合扰动的高阶特性,本研究将改进的非线性扩展扰动观测器(INEDOB)纳入控制器设计中。通过构造一个新的替代函数来规避饱和函数的可微性约束,INEDOB能够准确估计时变外部干扰及其高阶导数。在严格的稳定性证明的基础上,进一步分析和验证了新设计控制器的有效性。这种集成控制方案显著提高了系统的鲁棒性和轨迹跟踪精度,为外骨骼机器人的高动态精度控制提供了新的途径。
{"title":"Improved Sliding-Mode Control for High-Dynamic-Accuracy EHA in Exoskeleton Joint","authors":"Jianying Li,&nbsp;Sida Zhang,&nbsp;Xiaoyan Du,&nbsp;Enci Wang","doi":"10.1002/adts.202502026","DOIUrl":"10.1002/adts.202502026","url":null,"abstract":"<div>\u0000 \u0000 <p>To address the time-varying parameters, nonlinear friction, leakage, and load disturbances inherent to electro-hydrostatic actuator (EHA), and the exoskeleton robot's demands for handling strong coupling and achieving high trajectory accuracy, we design an adaptive variable-damping sliding-mode controller (ADV-SMC) that suppresses chattering while improving the dynamic response of the joint EHA. Because most existing studies overlook the higher-order characteristics of composite disturbances, this work incorporates an improved nonlinear extended disturbance observer (INEDOB) into the controller design. By constructing a novel surrogate function to circumvent the differentiability constraint of the saturation function, the INEDOB enables accurate estimation of time-varying external disturbances and their higher-order derivatives. On the basis of a rigorous stability proof, the effectiveness of the newly designed controller is further analyzed and validated. This integrated control scheme markedly enhances system robustness and trajectory-tracking accuracy, providing a new avenue for high-dynamic-precision control of exoskeleton robots.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bridging the Gap in Understanding the Mechanism of NH3 Formation During NO Reduction by CO in the Presence of H2O Over Rh/Al2O3 Catalysts: DFT Study 在Rh/ al2o3催化剂上,h2o存在下CO还原NO过程中nh3形成机理的研究:DFT研究
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-18 DOI: 10.1002/adts.202501922
Chanthip Wangphon, Patcharaporn Khajondetchairit, Meena Rittiruam, Annop Ektarawong, Björn Alling, Rathawat Daengngern, Piyasan Praserthdam, Tinnakorn Saelee, Supareak Praserthdam

Ammonia (NH3) formation from nitric oxide (NO) and carbon monoxide (CO) in the presence of water is a promising pathway for low-temperature NOx reduction. In this work, density functional theory (DFT) calculations were used to investigate the mechanism of NH3 formation on a Rh(111)/γ-Al2O3(110), in which the Rh(111) and γ-Al2O3(110) were considered separately. NO readily dissociates on the Rh site, forming N*, which reacts with CO to produce the key intermediate of NCO*. Meanwhile, water dissociates more easily on γ-Al2O3(110), providing H* species. The hydrolysis of NCO* can proceed via two pathways: on Rh(111), it forms HNCO, while on γ-Al2O3(110), it forms HNCOH*. Both intermediates subsequently decompose into NH* species, which are then hydrogenated to produce NH3. The Rh pathway is more favorable in both kinetics and thermodynamics, while the support mainly supplies hydrogen through water activation. These results suggest a dual-site mechanism in which Rh drives the main transformation, and γ-Al2O3(110) assists via hydrogen transfer. This work presents the individual roles of Rh and Al2O3 surfaces in NO reduction with CO, producing NH3, which is relevant to catalytic behavior under humid conditions.

在水的存在下,由一氧化氮(NO)和一氧化碳(CO)生成氨(nh3)是低温还原一氧化氮的一个很有前途的途径。在这项工作中,密度泛函理论(DFT)计算用于研究nh3在Rh(111)/γ‐Al 2o3(110)上的形成机理,其中Rh(111)和γ‐Al 2o3(110)分别考虑。NO在Rh位点极易解离,生成N*, N*与CO反应生成NCO*的关键中间体。同时,水更容易在γ‐Al 2o3(110)上解离,提供H*物质。NCO*的水解可通过两种途径进行:在Rh(111)上形成HNCO,而在γ‐Al 2o3(110)上形成HNCOH*。这两种中间产物随后都分解成NH*,然后被氢化生成nh3。Rh途径在动力学和热力学上都更有利,而载体主要通过水活化提供氢。这些结果表明了一个双位点机制,其中Rh驱动主转变,γ - Al 2o3(110)通过氢转移辅助转变。这项工作提出了Rh和al2o3表面在CO还原NO,产生nh3中的单独作用,这与潮湿条件下的催化行为有关。
{"title":"Bridging the Gap in Understanding the Mechanism of NH3 Formation During NO Reduction by CO in the Presence of H2O Over Rh/Al2O3 Catalysts: DFT Study","authors":"Chanthip Wangphon,&nbsp;Patcharaporn Khajondetchairit,&nbsp;Meena Rittiruam,&nbsp;Annop Ektarawong,&nbsp;Björn Alling,&nbsp;Rathawat Daengngern,&nbsp;Piyasan Praserthdam,&nbsp;Tinnakorn Saelee,&nbsp;Supareak Praserthdam","doi":"10.1002/adts.202501922","DOIUrl":"10.1002/adts.202501922","url":null,"abstract":"<div>\u0000 \u0000 <p>Ammonia (NH<sub>3</sub>) formation from nitric oxide (NO) and carbon monoxide (CO) in the presence of water is a promising pathway for low-temperature NO<sub>x</sub> reduction. In this work, density functional theory (DFT) calculations were used to investigate the mechanism of NH<sub>3</sub> formation on a Rh(111)/γ-Al<sub>2</sub>O<sub>3</sub>(110), in which the Rh(111) and γ-Al<sub>2</sub>O<sub>3</sub>(110) were considered separately. NO readily dissociates on the Rh site, forming N*, which reacts with CO to produce the key intermediate of NCO*. Meanwhile, water dissociates more easily on γ-Al<sub>2</sub>O<sub>3</sub>(110), providing H* species. The hydrolysis of NCO* can proceed via two pathways: on Rh(111), it forms HNCO, while on γ-Al<sub>2</sub>O<sub>3</sub>(110), it forms HNCOH*. Both intermediates subsequently decompose into NH* species, which are then hydrogenated to produce NH<sub>3</sub>. The Rh pathway is more favorable in both kinetics and thermodynamics, while the support mainly supplies hydrogen through water activation. These results suggest a dual-site mechanism in which Rh drives the main transformation, and γ-Al<sub>2</sub>O<sub>3</sub>(110) assists via hydrogen transfer. This work presents the individual roles of Rh and Al<sub>2</sub>O<sub>3</sub> surfaces in NO reduction with CO, producing NH<sub>3</sub>, which is relevant to catalytic behavior under humid conditions.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Effect of Thermal-Induced Atomic Motion on the Conductance of Copper Thin Films 热诱导原子运动对铜薄膜电导率影响的研究
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-18 DOI: 10.1002/adts.202502044
Sihe Chen, Kevin Batzinger, Manuel Smeu

Decreases in the size of integrated circuits (IC) and metal interconnects raise resistivity due to the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the effect of electron scattering due to a roughened surface, the effect of thermal induced atomic motion on the roughened surface remains unclear. To address this gap, we investigated electron transport in pristine and roughened Cu thin films by performing ab initio molecular dynamics (AIMD) trajectories over 20 ps at temperatures of 218, 300, and 540 K, and then calculating the electron transport properties of the resulting snapshots at 100-fs intervals for the last 10 ps using the non-equilibrium Green's function formalism in combination with density functional theory (NEGF-DFT). As expected, higher temperatures induce larger atomic displacement from the equilibrium positions and increase atomic layer separation. We also find that increased temperature results in increased resistance (lower conductance) for the pristine film, but less so for the roughened thin film, where the surface roughness itself is the main source of resistance. This study provides insights into how pristine and roughened Cu thin films behave under thermal conditions, helping researchers design better treatments to mitigate thermal effects in ICs and their metal interconnects.

集成电路(IC)和金属互连尺寸的减小由于电子散射效应的放大而提高了电阻率,从而降低了小晶片的效率。虽然以前的研究已经研究了粗糙表面对电子散射的影响,但热诱导原子运动对粗糙表面的影响仍然不清楚。为了解决这一差距,我们通过在218、300和540 K温度下进行从头算分子动力学(AIMD) 20 ps以上的轨迹来研究原始和粗糙Cu薄膜中的电子传输,然后使用非平衡格林函数形式主义结合密度泛函理论(NEGF - DFT)计算最后10 ps间隔100 fs的电子传输特性。正如预期的那样,较高的温度导致原子从平衡位置位移更大,并增加原子层的分离。我们还发现,温度升高会导致原始薄膜的电阻增加(电导率降低),但对于粗糙的薄膜则不然,因为表面粗糙度本身是电阻的主要来源。这项研究提供了原始和粗糙的Cu薄膜在热条件下的表现,帮助研究人员设计更好的处理方法来减轻ic及其金属互连中的热效应。
{"title":"Investigation of the Effect of Thermal-Induced Atomic Motion on the Conductance of Copper Thin Films","authors":"Sihe Chen,&nbsp;Kevin Batzinger,&nbsp;Manuel Smeu","doi":"10.1002/adts.202502044","DOIUrl":"10.1002/adts.202502044","url":null,"abstract":"<p>Decreases in the size of integrated circuits (IC) and metal interconnects raise resistivity due to the amplification of electron scattering effects, which decreases the efficiency of chiplets. While previous studies have investigated the effect of electron scattering due to a roughened surface, the effect of thermal induced atomic motion on the roughened surface remains unclear. To address this gap, we investigated electron transport in pristine and roughened Cu thin films by performing ab initio molecular dynamics (AIMD) trajectories over 20 ps at temperatures of 218, 300, and 540 K, and then calculating the electron transport properties of the resulting snapshots at 100-fs intervals for the last 10 ps using the non-equilibrium Green's function formalism in combination with density functional theory (NEGF-DFT). As expected, higher temperatures induce larger atomic displacement from the equilibrium positions and increase atomic layer separation. We also find that increased temperature results in increased resistance (lower conductance) for the pristine film, but less so for the roughened thin film, where the surface roughness itself is the main source of resistance. This study provides insights into how pristine and roughened Cu thin films behave under thermal conditions, helping researchers design better treatments to mitigate thermal effects in ICs and their metal interconnects.</p>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adts.202502044","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Distal Spin Modulation in Two-dimensional van der Waals VS2/FePSe3@Ni Heterostructure for Electrocatalytic Oxygen Reduction Reaction 电催化氧还原反应中二维van der Waals VS 2 /FePSe 3 @Ni异质结构的远端自旋调制
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-18 DOI: 10.1002/adts.202501639
Zhi-rui Luo, Ming Chen, Li-xin Han, De-bo Lin, Wen-xian Chen, Gui-lin Zhuang

This study designs a novel 2D van der Waals magnetic heterojunction, VS2/FePSe3@Ni, achieving remote spin control over the oxygen reduction reaction (ORR) catalytic performance by manipulating the spin orientation of the underlying VS2 layer. Theoretical calculations reveal that switching the ferromagnetic VS2 layer's spin orientation from spin-up to spin-down induces significant shifts in the heterojunction's band edge alignment and built-in electric field. This restructuring shifts the optimal ORR pathway: the spin-down state favors the efficient 4e pathway with H2O desorption as the rate-determining step (energy barrier: −0.86 eV), while the spin-up state promotes 2e reduction where OOH hydrogenation limits the rate (energy barrier: −0.54 eV). Further analysis reveals that spin flipping significantly enhances the material's electrical conductivity and Seebeck coefficient, leading to a notable improvement in the thermoelectric figure of merit ZT, demonstrating excellent thermoelectric conversion potential. This research not only uncovers the remote-control mechanism of spin polarization effects on the catalytic performance of heterojunctions but also provides a new paradigm for developing highly active and selective spintronic catalysts and multifunctional thermoelectric materials.

本研究设计了一种新型的二维范德华磁异质结VS 2 /FePSe 3 @Ni,通过操纵下层VS 2层的自旋取向,实现了对氧还原反应(ORR)催化性能的远程自旋控制。理论计算表明,将铁磁VS 2层的自旋方向从自旋向上切换到自旋向下,会引起异质结带边缘对准和内建电场的显著变化。这种重组改变了最优的ORR途径:自旋向下的状态有利于以h2o解吸为速率决定步骤的高效4e -途径(能量势垒:−0.86 eV),而自旋向上的状态促进2e -还原,OOH氢化限制了速率(能量势垒:−0.54 eV)。进一步分析表明,自旋翻转显著提高了材料的电导率和塞贝克系数,导致热电性能系数ZT显著提高,表现出优异的热电转换潜力。该研究不仅揭示了自旋极化效应对异质结催化性能的远程控制机制,而且为开发高活性、选择性的自旋电子催化剂和多功能热电材料提供了新的范例。
{"title":"Distal Spin Modulation in Two-dimensional van der Waals VS2/FePSe3@Ni Heterostructure for Electrocatalytic Oxygen Reduction Reaction","authors":"Zhi-rui Luo,&nbsp;Ming Chen,&nbsp;Li-xin Han,&nbsp;De-bo Lin,&nbsp;Wen-xian Chen,&nbsp;Gui-lin Zhuang","doi":"10.1002/adts.202501639","DOIUrl":"10.1002/adts.202501639","url":null,"abstract":"<div>\u0000 \u0000 <p>This study designs a novel 2D van der Waals magnetic heterojunction, VS<sub>2</sub>/FePSe<sub>3</sub>@Ni, achieving remote spin control over the oxygen reduction reaction (ORR) catalytic performance by manipulating the spin orientation of the underlying VS<sub>2</sub> layer. Theoretical calculations reveal that switching the ferromagnetic VS<sub>2</sub> layer's spin orientation from spin-up to spin-down induces significant shifts in the heterojunction's band edge alignment and built-in electric field. This restructuring shifts the optimal ORR pathway: the spin-down state favors the efficient 4e<sup>−</sup> pathway with H<sub>2</sub>O desorption as the rate-determining step (energy barrier: −0.86 eV), while the spin-up state promotes 2e<sup>−</sup> reduction where OOH hydrogenation limits the rate (energy barrier: −0.54 eV). Further analysis reveals that spin flipping significantly enhances the material's electrical conductivity and Seebeck coefficient, leading to a notable improvement in the thermoelectric figure of merit ZT, demonstrating excellent thermoelectric conversion potential. This research not only uncovers the remote-control mechanism of spin polarization effects on the catalytic performance of heterojunctions but also provides a new paradigm for developing highly active and selective spintronic catalysts and multifunctional thermoelectric materials.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel SPR Sensor Response for Chemical Sensing of Organic Solvents: A Computational Approach 一种用于有机溶剂化学传感的新型SPR传感器响应:计算方法
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-18 DOI: 10.1002/adts.202502113
Arun Uniyal, Youssef Trabelsi, Amrindra Pal, Ajit Debnath, Manoj A. Vora, Subbulakshmi Ganesan, Vinay Kumar Verma, Karthikeyan Jayabalan, Sandeep Sharma

We propose here a zinc selenide (ZnSe)-graphene-reliant sensitive surface plasmon resonance (SPR) sensor for detecting chemicals such as D2O, alcohol, and acetone. The sensor's performance is evaluated using the transfer matrix method (TMM) with respect to reflectivity, sensitivity, detection accuracy, and figure of merit. The results are then further analyzed by adjusting the sensor's structural parameters to design an optimal structure with optimal performance. Nine ZnSe layers and a monolayer of graphene were used to optimize sensor performance. With a Figure of Merit (FoM) of 46.704 RIU−1 and a maximum sensitivity of 279.666 deg/RIU, this hybrid structure is positioned atop a 45 nm thick layer of silver. The performance of the sensor structure was also evaluated over a wide detection range of 1.33–1.39, as many biological solutions fall within this range.

我们在此提出了一种硒化锌(ZnSe) -石墨烯依赖的敏感表面等离子体共振(SPR)传感器,用于检测化学物质,如d2o,酒精和丙酮。利用传递矩阵法(TMM)对传感器的反射率、灵敏度、检测精度和优值进行了评价。然后通过调整传感器的结构参数对结果进行进一步分析,设计出具有最优性能的最优结构。使用9层ZnSe和单层石墨烯来优化传感器性能。该混合结构位于45 nm厚的银层之上,其优点系数(FoM)为46.704 RIU−1,最大灵敏度为279.666度/RIU。传感器结构的性能也在1.33-1.39的检测范围内进行了评估,因为许多生物溶液都在这个范围内。
{"title":"A Novel SPR Sensor Response for Chemical Sensing of Organic Solvents: A Computational Approach","authors":"Arun Uniyal,&nbsp;Youssef Trabelsi,&nbsp;Amrindra Pal,&nbsp;Ajit Debnath,&nbsp;Manoj A. Vora,&nbsp;Subbulakshmi Ganesan,&nbsp;Vinay Kumar Verma,&nbsp;Karthikeyan Jayabalan,&nbsp;Sandeep Sharma","doi":"10.1002/adts.202502113","DOIUrl":"10.1002/adts.202502113","url":null,"abstract":"<div>\u0000 \u0000 <p>We propose here a zinc selenide (ZnSe)-graphene-reliant sensitive surface plasmon resonance (SPR) sensor for detecting chemicals such as D<sub>2</sub>O, alcohol, and acetone. The sensor's performance is evaluated using the transfer matrix method (TMM) with respect to reflectivity, sensitivity, detection accuracy, and figure of merit. The results are then further analyzed by adjusting the sensor's structural parameters to design an optimal structure with optimal performance. Nine ZnSe layers and a monolayer of graphene were used to optimize sensor performance. With a Figure of Merit (FoM) of 46.704 RIU<sup>−1</sup> and a maximum sensitivity of 279.666 deg/RIU, this hybrid structure is positioned atop a 45 nm thick layer of silver. The performance of the sensor structure was also evaluated over a wide detection range of 1.33–1.39, as many biological solutions fall within this range.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling, Simulation, and Experimental Validation: Optimal Placement of a Piezoelectric Energy Harvester via Magnetic Coupling From AC Power Lines Considering Air and Strain Damping 建模、仿真和实验验证:考虑空气和应变阻尼的交流电力线磁耦合压电能量收集器的最佳放置
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-17 DOI: 10.1002/adts.202502285
Hemant Narayan, Prakash Marimuthu, Shakila Baskaran, Kumar Rajagopal

The growing need for reliable, maintenance-free monitoring of power line infrastructure has intensified interest in sustainable power sources for wireless sensors. Piezoelectric energy harvesting offers a promising alternative to batteries. However, most existing power line harvesters deliberately ignore the combined effects of air damping, strain rate damping, and optimal positioning relative to AC power lines, which limits their power output and real-world applicability. This study addresses the gap and explicitly integrates them within a unified analytical, numerical, and experimental framework validating an optimally positioned piezoelectric energy harvester that extracts mechanical energy from the alternating magnetic field generated by current-carrying conductors. A coupled electromechanical model was formulated, incorporating magnetic excitation, air damping, strain damping to support and verify the results from the experimental setup. Results show that a 6.35 mm3 magnet placed beneath the power line, generates a peak force of 5.386 mN and an output voltage of 563.68 mV, with the harvested power increasing linearly with airflow velocity under a 9 A current flow at 4 mm from the AC power Line. The LTC3588-1 interface subsequently rectified and boosted the harvested voltage to a stable 3.3 V DC supply, demonstrating suitability for powering low-power Internet of Things (IoT) sensors in smart grid applications.

对可靠、免维护的电力线基础设施监测的需求日益增长,这增强了对无线传感器可持续电源的兴趣。压电能量收集提供了一种很有前途的电池替代品。然而,大多数现有的电力线收割机故意忽略了空气阻尼、应变率阻尼和相对于交流电力线的最佳定位的综合影响,这限制了它们的功率输出和实际应用。本研究解决了这一差距,并明确地将它们整合在一个统一的分析、数值和实验框架中,验证了一个最佳定位的压电能量收集器,该收集器可以从载流导体产生的交变磁场中提取机械能。建立了结合磁激励、空气阻尼和应变阻尼的耦合机电模型,以支持和验证实验装置的结果。结果表明,在距离交流电源线4 mm处,当电流为9 a时,在电源线下方放置一个6.35 mm3的磁铁,产生的峰值力为5.386 mN,输出电压为563.68 mV,收获的功率随气流速度线性增加。LTC3588-1接口随后整流并将采集电压提升到稳定的3.3 V直流电源,证明了为智能电网应用中的低功耗物联网(IoT)传感器供电的适用性。
{"title":"Modeling, Simulation, and Experimental Validation: Optimal Placement of a Piezoelectric Energy Harvester via Magnetic Coupling From AC Power Lines Considering Air and Strain Damping","authors":"Hemant Narayan,&nbsp;Prakash Marimuthu,&nbsp;Shakila Baskaran,&nbsp;Kumar Rajagopal","doi":"10.1002/adts.202502285","DOIUrl":"10.1002/adts.202502285","url":null,"abstract":"<div>\u0000 \u0000 <p>The growing need for reliable, maintenance-free monitoring of power line infrastructure has intensified interest in sustainable power sources for wireless sensors. Piezoelectric energy harvesting offers a promising alternative to batteries. However, most existing power line harvesters deliberately ignore the combined effects of air damping, strain rate damping, and optimal positioning relative to AC power lines, which limits their power output and real-world applicability. This study addresses the gap and explicitly integrates them within a unified analytical, numerical, and experimental framework validating an optimally positioned piezoelectric energy harvester that extracts mechanical energy from the alternating magnetic field generated by current-carrying conductors. A coupled electromechanical model was formulated, incorporating magnetic excitation, air damping, strain damping to support and verify the results from the experimental setup. Results show that a 6.35 mm<sup>3</sup> magnet placed beneath the power line, generates a peak force of 5.386 mN and an output voltage of 563.68 mV, with the harvested power increasing linearly with airflow velocity under a 9 A current flow at 4 mm from the AC power Line. The LTC3588-1 interface subsequently rectified and boosted the harvested voltage to a stable 3.3 V DC supply, demonstrating suitability for powering low-power Internet of Things (IoT) sensors in smart grid applications.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146210082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sequential MD-QM Approach to Compute Chemical Properties of Amorphous Silica-Based Catalysts: Brønsted Aluminosilicate Acids as Case Study 序贯MD - QM方法计算非晶硅基催化剂的化学性质:Brønsted铝硅酸盐酸为例研究
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-16 DOI: 10.1002/adts.202501609
Charles Rubirigi, Carmela Aprile, Benoît Champagne

Amorphous silica-based materials are often used as support for catalysis experiments. The insertion of heteroelements (i.e., neither a silicon nor an oxygen atom) leads to the formation of Brønsted or Lewis acid sites. Despite their widespread use, the characterization of their acidic properties and the correlation with structural features remain challenging. In this context, computing chemical properties with quantum chemical methods can bring insights into such materials, while the large size of these systems implies the use of models to control the computational effort. This work aims to present a general procedure for calculating chemical properties of amorphous silica-based catalysts. The amorphous network is generated using classical molecular dynamics via a thermal treatment called melt-and-quench. Particular attention is devoted to the catalyst shape and the silanol coverage. The quality of the final amorphous network is assessed through the characterization of the geometrical structures involving primitive ring analysis. DFT calculations are then performed on hemispheres extracted from the amorphous silica frameworks to model aluminosilicate Brønsted acid sites. The impact of cluster size on the prediction of chemical properties is illustrated by calculations of deprotonation energies, chemical shifts, and vibrational frequencies. The influence of the exchange-correlation (XC) functional on those quantities is also discussed.

无定形二氧化硅基材料常被用作催化实验的载体。异质元素的插入(即既不是硅原子也不是氧原子)导致Brønsted或Lewis酸位的形成。尽管它们被广泛使用,但其酸性特性的表征及其与结构特征的相关性仍然具有挑战性。在这种情况下,用量子化学方法计算化学性质可以深入了解这些材料,而这些系统的大尺寸意味着使用模型来控制计算工作。本工作旨在提出一种计算非晶硅基催化剂化学性质的通用方法。非晶态网络是利用经典分子动力学,通过一种称为熔融-淬火的热处理产生的。特别注意的是催化剂的形状和硅烷醇的覆盖率。最后的非晶网络的质量是通过几何结构的表征,包括原始环分析进行评估。然后对从无定形二氧化硅框架中提取的半球进行DFT计算,以模拟硅酸铝Brønsted酸位。团簇大小对化学性质预测的影响通过去质子化能、化学位移和振动频率的计算来说明。还讨论了交换相关(XC)泛函对这些量的影响。
{"title":"Sequential MD-QM Approach to Compute Chemical Properties of Amorphous Silica-Based Catalysts: Brønsted Aluminosilicate Acids as Case Study","authors":"Charles Rubirigi,&nbsp;Carmela Aprile,&nbsp;Benoît Champagne","doi":"10.1002/adts.202501609","DOIUrl":"10.1002/adts.202501609","url":null,"abstract":"<div>\u0000 \u0000 <p>Amorphous silica-based materials are often used as support for catalysis experiments. The insertion of heteroelements (i.e., neither a silicon nor an oxygen atom) leads to the formation of Brønsted or Lewis acid sites. Despite their widespread use, the characterization of their acidic properties and the correlation with structural features remain challenging. In this context, computing chemical properties with quantum chemical methods can bring insights into such materials, while the large size of these systems implies the use of models to control the computational effort. This work aims to present a general procedure for calculating chemical properties of amorphous silica-based catalysts. The amorphous network is generated using classical molecular dynamics via a thermal treatment called melt-and-quench. Particular attention is devoted to the catalyst shape and the silanol coverage. The quality of the final amorphous network is assessed through the characterization of the geometrical structures involving primitive ring analysis. DFT calculations are then performed on hemispheres extracted from the amorphous silica frameworks to model aluminosilicate Brønsted acid sites. The impact of cluster size on the prediction of chemical properties is illustrated by calculations of deprotonation energies, chemical shifts, and vibrational frequencies. The influence of the exchange-correlation (XC) functional on those quantities is also discussed.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unveiling the Multifaceted Properties of Zn3MoN4 a Nitride-Based Compound via DFT and ML Study 通过DFT和ML研究揭示Zn - 3mon4a氮化物基化合物的多方面性质
IF 2.9 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Pub Date : 2026-02-13 DOI: 10.1002/adts.202502204
Pandit Aditya Rajnikant, Sekar Chellaiya Thomas Rueshwin, Shanmugam Parthiban, Rajagopal Dashinamoorthy Eithiraj

A theoretical investigation on the Zn3MoN4 compound was carried out using WIEN2k, DFT-based code, to calculate the electronic, optoelectronic, and thermal properties of the wurtzite-based diamond-like Zn3MoN4 structure. This compound exhibits an orthorhombic structure with the space group Pmn21. The structural, electronic, optoelectronic and thermoelectric properties were calculated within the GGA approximation. As GGA tends to underestimate the band gap, both GGA and the hybrid functional (YS-PBE0) methods were implemented, yielding indirect band gaps of 2.062 and 3.106 eV, respectively. Band gaps predicted using Extra Trees (2.081 eV) and K-Nearest Neighbors (2.087 eV) closely matched the DFT value of 2.06 eV for Zn3MoN4, outperforming Random Forest (1.700 eV), Gradient Boost (1.404 eV) and XGBoost (1.455 eV). From the density of states, it was observed that Mo-d and N-p orbitals have the major electronic contribution. The calculated optoelectronic properties, including dielectric constants, absorption coefficient, refractive index, reflectivity, and energy loss, suggest promising potential for optoelectronic applications. Additionally, effective mass, exciton binding energy, and exciton Bohr radius were calculated, with the effective mass of holes being greater than that of electrons, signifying holes as the major carriers. The thermoelectric properties were also investigated, including Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit, across the temperature range 0–1000 K. The ZT values were modelled with consistent R2 and RMSE performance for the aforementioned models.

利用WIEN2k(基于DFT的代码)对z3mon4化合物进行了理论研究,计算了纤锌矿基类金刚石z3mon4结构的电子、光电和热性能。该化合物具有空间基团Pmn2 - 1的正交结构。在GGA近似下计算了结构、电子、光电和热电性能。由于GGA往往会低估带隙,因此采用GGA和混合泛函(YS - PBE0)方法,分别得到2.062 eV和3.106 eV的间接带隙。使用Extra Trees (2.081 eV)和K‐Nearest Neighbors (2.087 eV)预测的带隙与zn3mon4的DFT值(2.06 eV)非常接近,优于Random Forest (1.700 eV)、Gradient Boost (1.404 eV)和XGBoost (1.455 eV)。从态密度来看,Mo - d和N - p轨道的电子贡献最大。计算出的光电特性,包括介电常数、吸收系数、折射率、反射率和能量损失,表明光电应用具有广阔的潜力。计算了有效质量、激子结合能和激子玻尔半径,发现空穴的有效质量大于电子的有效质量,说明空穴是主要的载流子。在0-1000 K的温度范围内,研究了热电性能,包括塞贝克系数、电导率、导热系数、功率因数和优值。对上述模型的ZT值进行了一致的r2和RMSE性能建模。
{"title":"Unveiling the Multifaceted Properties of Zn3MoN4 a Nitride-Based Compound via DFT and ML Study","authors":"Pandit Aditya Rajnikant,&nbsp;Sekar Chellaiya Thomas Rueshwin,&nbsp;Shanmugam Parthiban,&nbsp;Rajagopal Dashinamoorthy Eithiraj","doi":"10.1002/adts.202502204","DOIUrl":"10.1002/adts.202502204","url":null,"abstract":"<div>\u0000 \u0000 <p>A theoretical investigation on the Zn<sub>3</sub>MoN<sub>4</sub> compound was carried out using WIEN2k, DFT-based code, to calculate the electronic, optoelectronic, and thermal properties of the wurtzite-based diamond-like Zn<sub>3</sub>MoN<sub>4</sub> structure. This compound exhibits an orthorhombic structure with the space group Pmn2<sub>1</sub>. The structural, electronic, optoelectronic and thermoelectric properties were calculated within the GGA approximation. As GGA tends to underestimate the band gap, both GGA and the hybrid functional (YS-PBE0) methods were implemented, yielding indirect band gaps of 2.062 and 3.106 eV, respectively. Band gaps predicted using Extra Trees (2.081 eV) and K-Nearest Neighbors (2.087 eV) closely matched the DFT value of 2.06 eV for Zn<sub>3</sub>MoN<sub>4</sub>, outperforming Random Forest (1.700 eV), Gradient Boost (1.404 eV) and XGBoost (1.455 eV). From the density of states, it was observed that Mo-<i>d</i> and N-<i>p</i> orbitals have the major electronic contribution. The calculated optoelectronic properties, including dielectric constants, absorption coefficient, refractive index, reflectivity, and energy loss, suggest promising potential for optoelectronic applications. Additionally, effective mass, exciton binding energy, and exciton Bohr radius were calculated, with the effective mass of holes being greater than that of electrons, signifying holes as the major carriers. The thermoelectric properties were also investigated, including Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit, across the temperature range 0–1000 K. The ZT values were modelled with consistent R<sup>2</sup> and RMSE performance for the aforementioned models.</p>\u0000 </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 2","pages":""},"PeriodicalIF":2.9,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146169771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Advanced Theory and Simulations
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1