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Tunable Graphene-Based Absorber Using Nanoscale Grooved Metal Film at Telecommunication Wavelengths 电信波长下使用纳米级凹槽金属膜的可调谐石墨烯吸收器
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-31 DOI: 10.1002/adpr.202300013
Afrooz Afzalipour, Mohammad Sadegh Zare, Asma Attariabad, Ali Farmani

Graphene-based absorbers have various modern applications across industries due to their exceptional properties. Some common applications include: thermal management and energy storage. Herein, the design and simulation of a broadband tunable absorber based on graphene with perfect absorption spectra in the near-infrared region are reported. The proposed structure consists of an MgF2 layer and golden disc surrounded by L-shaped golden arms placed on single layer of graphene. The structure guarantees polarization-insensitive (PI) performance under normal incident due to the symmetrical design. The investigation of the PI of the structure reveals almost similar absorption for oblique incident angles up to 55° for TM and up to 60° for TE polarization. The desirable resonance wavelength is achievable by tuning the geometrical parameters. By changing the chemical potential of graphene, the absorption and bandwidth of absorber are controllable. A full width at half maximum of 330 nm is another superiority of this absorber. These considerable aspects of the proposed structure make it practical for varieties of applications such as cloaking, sensing, switching, and so on.

石墨烯基吸收剂由于其特殊的性能,在各行各业都有各种各样的现代应用。一些常见的应用包括:热管理和能量储存。本文报道了一种基于石墨烯的宽带可调谐吸收体的设计和仿真,该吸收体在近红外区域具有完美的吸收光谱。所提出的结构由MgF2层和金盘组成,金盘周围是放置在单层石墨烯上的l形金臂。由于对称设计,该结构保证了正常入射下的偏振不敏感(PI)性能。对该结构的PI的研究表明,在倾斜入射角高达55°的TM和高达60°的TE极化下,该结构的吸收几乎相似。通过调整几何参数可以获得理想的共振波长。通过改变石墨烯的化学势,可以控制吸收剂的吸收和带宽。半宽330纳米是该吸收剂的另一个优点。所提出的结构的这些重要方面使其适用于各种应用,如隐身、传感、开关等。
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引用次数: 0
Gan Photonic Crystals: Spectral Dynamics in UV, X-Ray, and Alpha Radiation
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-28 DOI: 10.1002/adpr.202400075
Firat Yasar, Noriaki Kawaguchi, Takayuki Yanagida, Isabel Harrysson Rodrigues, Yleana Evelyn Ceballos, Roberto Prado-Rivera, Sam Keo

In this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is analyzed, and this study examines how PhC implementation can enhance these properties. Methodologically, the emission spectra is analyzed from 5.9 keV X-ray sources, decay curves, pulse height spectra in response to 241Am 5.5 MeV alpha-rays, and photoluminescence spectra induced by UV excitation. The findings demonstrate a substantial increase in quantum efficiency for PhC GaN, nearly tripling the light yield that of conventional plain GaN thin films under the UV excitation. The enhancement is predominantly attributed to the PhC GaN's proficiency in guiding light at 550 nm, a feature indicative of its spectral filtering capabilities, as detailed in the study. Furthermore, side-band scintillations, stemming from inherent materials like Chromium that generate scintillations at diverse wavelengths, are effectively mitigated. A key finding of this study is the effective detection of light not only at the rear but also along the lateral sides of the films, offering new possibilities for radiation detector design and architecture.

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引用次数: 0
CsSnBr3 and Cs3Bi2Br9: Structural, Optical Characteristics, and Application in a Schottky Barrier Diode CsSnBr3和Cs3Bi2Br9:结构、光学特性及其在肖特基势垒二极管中的应用
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-28 DOI: 10.1002/adpr.202300337
Olusola Akinbami, Thelma Majola, Grace Nomthandazo Ngubeni, Kalenga Pierre Mubiayi, Nosipho Moloto

The search for alternatives to Pb-based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb-free options. Tin (Sn) and bismuth (Bi) are promising candidates, given their similar ionic radii to Pb and the isoelectronic nature of Pb2+ and Bi3+, which suggest comparable chemical properties. Among these, CsSnBr3 and Cs3Bi2Br9 are relatively underexplored but offer lower toxicity and enhanced stability while demonstrating optoelectronic properties suitable for various applications. In this study, CsSnBr3 and Cs3Bi2Br9 nanocrystals are synthesized using a colloidal method and integrated into Schottky diodes. X-ray photoelectron spectroscopy analysis of the surface chemistry confirms improved thermal and phase stability compared to Pb-based perovskites. Schottky diode parameters, including ideality factor, barrier height, and series resistance are assessed using conventional thermionic emission, modified Cheung's, and Norde's models. The Cs3Bi2Br9-based Schottky diode exhibits superior electrical performance with the lowest series resistance and optimal barrier height. Electrical impedance spectroscopy results indicated that CsSnBr3 has higher resistances and lower capacitances than Cs3Bi2Br9, reflecting lower charge carrier mobility and more defects, although the R1C1 regions in both materials demonstrated faster charge dynamics, making them ideal for high-speed applications.

由于对稳定性和毒性的担忧,寻找铅基钙钛矿的替代品导致了对无铅选择的探索。锡(Sn)和铋(Bi)是很有希望的候选者,因为它们的离子半径与Pb相似,而且Pb2+和Bi3+的等电子性质表明它们具有相似的化学性质。其中,CsSnBr3和Cs3Bi2Br9的开发相对较少,但具有较低的毒性和增强的稳定性,同时具有适合各种应用的光电特性。本研究采用胶体法合成了CsSnBr3和Cs3Bi2Br9纳米晶体,并将其集成到肖特基二极管中。表面化学的x射线光电子能谱分析证实,与铅基钙钛矿相比,其热稳定性和相稳定性有所改善。肖特基二极管参数,包括理想因数,势垒高度,和串联电阻评估使用传统的热离子发射,修改张的,和Norde的模型。基于cs3bi2br9的肖特基二极管具有优异的电性能,具有最低的串联电阻和最佳的势垒高度。电阻抗谱结果表明,CsSnBr3比Cs3Bi2Br9具有更高的电阻和更低的电容,反映出更低的电荷载流子迁移率和更多的缺陷,尽管两种材料中的R1C1区域都表现出更快的电荷动态,使其成为高速应用的理想选择。
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引用次数: 0
Switchable Camouflage via Reflective Display
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-28 DOI: 10.1002/adpr.202400112
Shuang Yuan, Jiayu Zhou, Qixing Meng, Rui Zhang, Yufei Gao, Minghou Liu, Hong Ye, Linshuang Long

In nature, dynamic camouflage is performed by cephalopods and reptiles. Humans attempt to perform dynamic camouflage by employing display devices to show the surrounding background. In this work, a switchable camouflage device based on an electrophoretic display (EPD) is proposed. Color-filter EPDs display colors by reflecting light through the color filters and black-and-white EPDs. The number of subpixels is found to be an important factor on color performance. To improve the poor saturation of color-filter EPDs, the number of color filter subpixels is reduced. Compared with filters with three and four subpixels, a dual-subpixel filter proposed in this work significantly improves the average saturation of red, green, and blue colors, with increases of 49% and 112%, respectively. Subsequently, the spectral characteristics of the color filter and black-and-white EPD are optimized by using genetic algorithm to reduce the average color difference between the display and the switchable target color, which can be reduced as low as 0.18. To visually demonstrate the color reproduction capability of the dual-subpixel EPD, sample applications including the switchable vegetation and digital camouflages are designed and have a high degree of agreement with the background. In this work, an innovative and effective approach is introduced to dynamic camouflage.

在自然界中,头足类和爬行类动物会进行动态伪装。人类试图通过使用显示装置来显示周围的背景,从而实现动态伪装。在这项工作中,提出了一种基于电泳显示器(EPD)的可切换伪装装置。彩色滤光片 EPD 通过彩色滤光片和黑白 EPD 的反射光显示颜色。研究发现,子像素的数量是影响色彩表现的一个重要因素。为了改善彩色滤光片 EPD 饱和度差的问题,需要减少彩色滤光片子像素的数量。与具有三个和四个子像素的滤光片相比,本文提出的双子像素滤光片能显著提高红、绿、蓝三色的平均饱和度,分别提高了 49% 和 112%。随后,利用遗传算法优化了彩色滤光片和黑白 EPD 的光谱特性,从而降低了显示屏与可切换目标色之间的平均色差,最低可降至 0.18。为了直观地展示双子像素 EPD 的色彩再现能力,设计了包括可切换植被和数字伪装在内的示例应用,并与背景高度一致。这项工作为动态伪装引入了一种创新而有效的方法。
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引用次数: 0
Highly Amplified Broadband Ultrasound in Antiresonant Hollow Core Fibers
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-20 DOI: 10.1002/adpr.202400086
Ricardo E. da Silva, David John Webb, Cristiano Monteiro de Barros Cordeiro, Marcos Antonio Ruggieri Franco

High-frequency broadband ultrasound in nested antiresonant hollow core fibers (NANFs) is investigated for the first time. NANFs have remarkable features enabling high-resolution microscale optoacoustic imaging sensors and neurostimulators. Solid optical fibers have been successfully employed to measure and generate ultrasonic signals, however, they face issues concerning attenuation, limited frequency range, bandwidth, and spatial resolution. Herein, highly efficient ultrasonic propagation in NANFs from 10 to 100 MHz is numerically demonstrated. The induced pressures and sensing responsivity are evaluated in detail, and important parameters for the development of ultrasonic devices are reviewed. High pressures (up to 234 MPa) and sensing responsivities (up to −207 dB) are tuned over 90 MHz range by changing the diameters of two distinct NANF geometries. To the best of knowledge, this is the widest bandwidth reported using similar diameter fibers. The results are a significant advance for fiber-based ultrasonic sensors and transmitters, contributing to improve their efficiency and microscale spatial resolution for the detection, diagnosis, and treatment of diseases in biomedical applications.

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引用次数: 0
Novel 2D/3D Heterojunction for UV Light-Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-17 DOI: 10.1002/adpr.202400092
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden

The AlGaN materials system has been extensively studied in order to improve the efficiency of UV-B and UV-C light-emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter-wavelength operation results in increased activation energy of Mg dopants, resulting in low p-doping. Although p-doped h-BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p-doped AlGaN, there have not been demonstrations of LEDs fabricated from p-doped h-BN/AlGaN heterostructures. Such unique heterostructures combine 2D p-doped h-BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p-doped h-BN/AlGaN multiple quantum wells (MQWs)/n-AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p-doped h-BN into AlGaN and provide a proof of concept that p-doped h-BN can be an alternative hole injection layer for UV LEDs.

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引用次数: 0
High-Resolution Optical Convolutional Neural Networks Using Phase-Change Material-Based Microring Hybrid Waveguides 基于相变材料微环混合波导的高分辨率光学卷积神经网络
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-13 DOI: 10.1002/adpr.202400108
Shuguang Zhu, Zhengyang Zhang, Weiwei Tang, Leijun Xu, Li Han, Jie Hong, Yiming Yu, Ziying Li, Qinghua Qin, Changlong Liu, Libo Zhang, Songyuan Ding, Jiale He, Guanhai Li, Xiaoshuang Chen

In the More-than-Moore era, the explosive growth of data and information has driven the exploration of alternative non-von Neumann computational paradigms. Photonic neuromorphic computing has emerged as a promising approach, offering high speed, wide bandwidth, and massive parallelism. Herein, a high-resolution optical convolutional neural network (OCNN) is introduced using phase-change material Ge2Sb2Te5 (GST)-based microring hybrid waveguides. This on-chip optical computing platform integrates GST into photonic devices, enabling versatile programming and in-memory computing capabilities. Central to this platform is a photonic convolutional computational kernel, constructed from photonic switching cells embedded with GST on a microring resonator. This programmable photonic switch leverages the refractive index modulation during the GST phase transition to achieve up to 64 discrete levels of transmission contrast, suitable for representing matrix elements in neural network algorithms with 6-bit resolution. Using these matrix elements, an OCNN capable of performing parallelized image edge detection and digital recognition tasks with high accuracy is demonstrated. The architecture is scalable for large-scale photonic neural networks, offering ultrahigh computational throughput, a compact design, complementary metal-oxide-semiconductor-compatible fabrication, and broad bandwidth.

在超越摩尔时代,数据和信息的爆炸式增长推动了对非冯·诺伊曼计算范式的探索。光子神经形态计算已经成为一种很有前途的方法,提供高速、宽带宽和大规模并行性。本文采用基于相变材料Ge2Sb2Te5 (GST)的微环混合波导,提出了一种高分辨率的光学卷积神经网络(OCNN)。这个片上光学计算平台将GST集成到光子器件中,实现了通用编程和内存计算能力。该平台的核心是一个光子卷积计算内核,由嵌入GST的光子开关单元在微环谐振器上构建。这种可编程光子开关利用GST相变期间的折射率调制来实现高达64个离散级的传输对比度,适用于以6位分辨率表示神经网络算法中的矩阵元素。利用这些矩阵元素,展示了一种能够以高精度执行并行图像边缘检测和数字识别任务的OCNN。该架构可扩展到大规模光子神经网络,提供超高的计算吞吐量,紧凑的设计,互补的金属氧化物半导体兼容制造和宽带。
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引用次数: 0
Ultraflat, Monolithic, Highly Stable Supercontinuum Source Based on Fluorotellurite Fiber
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-13 DOI: 10.1002/adpr.202400084
Hao Lei, Yadong Jiao, XinSheng Zhao, Kunlin Xie, Junsheng Chen, Wenbo Zhong, Xiaohui Guo, Hongyu Luo, Jianfeng Li, Zhixu Jia, Guanshi Qin

Supercontinuum (SC) sources covering near-infrared and midinfrared region have attracted enormous interest and found significant applications in tissue imaging, sensing, spectroscopy, defense, and environmental monitoring. Herein, an 8.45 W all-fiber ultraflat SC source with a spectral range of 1.01–4.05 μm using a flat high-power 1.9–2.7 μm SC fiber source to pump a piece of fluorotellurite fiber is presented. The SC spectrum exhibits a 3 dB bandwidth of 1850 nm, ranging from 1870 to 3720 nm, and a 10 dB bandwidth of 2770 nm, ranging from 1120 to 3890 nm. The measured power stability is 0.19% (root mean square) for 5 h of continuous operation, proving the excellent power stability of the system. To the best of knowledge, the SC spectrum exhibits the widest reported 3 and 10 dB bandwidths for 1–4 μm SC sources.

覆盖近红外和中红外区域的超连续(SC)光源引起了人们的极大兴趣,并在组织成像、传感、光谱学、国防和环境监测等领域得到了重要应用。本文介绍了一种 8.45 W 的全光纤超扁平 SC 光源,其光谱范围为 1.01-4.05 μm,使用扁平的 1.9-2.7 μm 高功率 SC 光纤源来泵浦一段荧光石光纤。SC 光谱的 3 dB 带宽为 1850 nm(从 1870 nm 到 3720 nm),10 dB 带宽为 2770 nm(从 1120 nm 到 3890 nm)。在连续运行 5 小时后,测得的功率稳定性为 0.19%(均方根),证明该系统具有出色的功率稳定性。据目前所知,1-4 μm SC 光源的 3 dB 和 10 dB 带宽是目前所报道的 SC 频谱中最宽的。
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引用次数: 0
Polarization-Controlled Diffractions of Submicron Pillar Arrays of Azo Molecular Glass for Image Recording and Reconstruction
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-13 DOI: 10.1002/adpr.202400106
Zenan Wang, Chungen Hsu, Xiaogong Wang

Recording and manipulating optical waves with functional structures are crucially important for many applications. Herein, the submicron pillar arrays of an azo molecular glass (IA-Chol) are explored to show functional synergy of a recording medium and a diffractive optical element. The image recording is achieved through the pillar deformation along the electric-field oscillation direction of incident light. When illuminated with a polarized beam, the reconstructed images appear in the first-order diffraction spots of the pillar array with the tailored intensity distributions depending on the states of polarization of the recording beam and the image reconstruction beam. This approach enables several images to be recorded in the adjacent zones of the same pillar array using lights with different polarization directions, and then the images are reconstructed separately or simultaneously upon the polarization directions of the illumination light. Furthermore, the topographic features of the pillar array after the recording are replicated by replica-molding to the surfaces of polydimethylsiloxane (PDMS) slices as negative replicas and transformed to surfaces of poly(methylmethacrylate) (PMMA) films through hot-embossing. The PDMS and PMMA replicas are highly transparent in the visible light range and able to produce the reconstructed images with light in a wide-wavelength extent.

利用功能结构记录和操纵光波对许多应用都至关重要。本文探讨了偶氮分子玻璃(IA-Chol)的亚微米柱阵列,以显示记录介质和衍射光学元件的功能协同作用。图像记录是通过沿入射光电场振荡方向的柱变形实现的。当偏振光束照射时,重建图像出现在柱阵列的一阶衍射光斑中,其强度分布取决于记录光束和图像重建光束的偏振状态。这种方法可以使用不同偏振方向的光在同一柱阵的相邻区域记录多幅图像,然后根据照明光的偏振方向分别或同时重建图像。此外,记录后的柱状阵列的地形特征通过复制成型被复制到聚二甲基硅氧烷(PDMS)切片的表面作为阴性复制品,并通过热压花被转换到聚(甲基丙烯酸甲酯)(PMMA)薄膜的表面。PDMS 和 PMMA 复型在可见光范围内高度透明,能够在宽波长范围内用光线生成重建图像。
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引用次数: 0
InAs Terahertz Metalens Emitter for Focused Terahertz Beam Generation 聚焦太赫兹光束产生的InAs太赫兹超透镜发射器
IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-10-13 DOI: 10.1002/adpr.202400125
Hyunseung Jung, Igal Brener, Sadhvikas J. Addamane, Ting Shan Luk, C. Thomas Harris, Ganapathi Subramania, Oleg Mitrofanov

Metasurfaces have opened doors to combining multiple photonic functionalities in a single compact device. In particular, the ability to generate short terahertz (THz) pulses with precise wavefront engineering in a single THz metasurface redefined the role metasurfaces can play in THz systems. Here, an InAs metalens emitter which generates and focuses a THz pulse beam is demonstrated using a 130 nm thick InAs metasurface designed as a binary-phase Fresnel zone plate. The THz beam is focused to a spot of ≈430 μm at 1 THz with a short focal length of 5 mm and large numerical aperture of 0.5. Nanoscale InAs Mie resonators comprising the metasurface enable THz generation with an amplitude as high as 20 times compared to plasmonic THz emitters and several times compared to a 1 mm thick ZnTe crystal. This InAs metasurface emitter provides a new paradigm for designing THz imaging, spectroscopy, and communication systems, where THz beam generation and shaping are performed with a single device without compromising the generation efficiency, while eliminating losses and avoiding limitations of phase matching of conventional nonlinear optics approaches.

超表面打开了一扇门,在一个单一的紧凑的设备中结合多个光子功能。特别是,在单个太赫兹元表面上通过精确的波前工程产生短太赫兹(THz)脉冲的能力重新定义了元表面在太赫兹系统中可以发挥的作用。在这里,使用设计为二相菲涅耳带板的130 nm厚的InAs超表面,演示了一个产生和聚焦太赫兹脉冲光束的InAs超透镜发射器。太赫兹光束在1太赫兹下聚焦到约430 μm的光斑上,焦距为5 mm,数值孔径为0.5。包含超表面的纳米级InAs Mie谐振器使太赫兹产生的幅度高达等离子体太赫兹发射器的20倍,是1毫米厚ZnTe晶体的几倍。这种InAs超表面发射器为设计太赫兹成像、光谱和通信系统提供了一种新的范例,在这种系统中,太赫兹波束的产生和整形是在一个设备上完成的,而不会影响产生效率,同时消除了损耗,避免了传统非线性光学方法的相位匹配限制。
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引用次数: 0
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Advanced Photonics Research
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