Afrooz Afzalipour, Mohammad Sadegh Zare, Asma Attariabad, Ali Farmani
Graphene-based absorbers have various modern applications across industries due to their exceptional properties. Some common applications include: thermal management and energy storage. Herein, the design and simulation of a broadband tunable absorber based on graphene with perfect absorption spectra in the near-infrared region are reported. The proposed structure consists of an MgF2 layer and golden disc surrounded by L-shaped golden arms placed on single layer of graphene. The structure guarantees polarization-insensitive (PI) performance under normal incident due to the symmetrical design. The investigation of the PI of the structure reveals almost similar absorption for oblique incident angles up to 55° for TM and up to 60° for TE polarization. The desirable resonance wavelength is achievable by tuning the geometrical parameters. By changing the chemical potential of graphene, the absorption and bandwidth of absorber are controllable. A full width at half maximum of 330 nm is another superiority of this absorber. These considerable aspects of the proposed structure make it practical for varieties of applications such as cloaking, sensing, switching, and so on.
{"title":"Tunable Graphene-Based Absorber Using Nanoscale Grooved Metal Film at Telecommunication Wavelengths","authors":"Afrooz Afzalipour, Mohammad Sadegh Zare, Asma Attariabad, Ali Farmani","doi":"10.1002/adpr.202300013","DOIUrl":"https://doi.org/10.1002/adpr.202300013","url":null,"abstract":"<p>Graphene-based absorbers have various modern applications across industries due to their exceptional properties. Some common applications include: thermal management and energy storage. Herein, the design and simulation of a broadband tunable absorber based on graphene with perfect absorption spectra in the near-infrared region are reported. The proposed structure consists of an MgF<sub>2</sub> layer and golden disc surrounded by L-shaped golden arms placed on single layer of graphene. The structure guarantees polarization-insensitive (PI) performance under normal incident due to the symmetrical design. The investigation of the PI of the structure reveals almost similar absorption for oblique incident angles up to 55° for TM and up to 60° for TE polarization. The desirable resonance wavelength is achievable by tuning the geometrical parameters. By changing the chemical potential of graphene, the absorption and bandwidth of absorber are controllable. A full width at half maximum of 330 nm is another superiority of this absorber. These considerable aspects of the proposed structure make it practical for varieties of applications such as cloaking, sensing, switching, and so on.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 12","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300013","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is analyzed, and this study examines how PhC implementation can enhance these properties. Methodologically, the emission spectra is analyzed from 5.9 keV X-ray sources, decay curves, pulse height spectra in response to 241Am 5.5 MeV alpha-rays, and photoluminescence spectra induced by UV excitation. The findings demonstrate a substantial increase in quantum efficiency for PhC GaN, nearly tripling the light yield that of conventional plain GaN thin films under the UV excitation. The enhancement is predominantly attributed to the PhC GaN's proficiency in guiding light at 550 nm, a feature indicative of its spectral filtering capabilities, as detailed in the study. Furthermore, side-band scintillations, stemming from inherent materials like Chromium that generate scintillations at diverse wavelengths, are effectively mitigated. A key finding of this study is the effective detection of light not only at the rear but also along the lateral sides of the films, offering new possibilities for radiation detector design and architecture.
{"title":"Gan Photonic Crystals: Spectral Dynamics in UV, X-Ray, and Alpha Radiation","authors":"Firat Yasar, Noriaki Kawaguchi, Takayuki Yanagida, Isabel Harrysson Rodrigues, Yleana Evelyn Ceballos, Roberto Prado-Rivera, Sam Keo","doi":"10.1002/adpr.202400075","DOIUrl":"https://doi.org/10.1002/adpr.202400075","url":null,"abstract":"<p>In this work, a comparative analysis of gallium nitride (GaN) thin films is conducted, both with and without photonic crystal (PhC) structures, focusing on their scintillation and photoluminescence properties. GaN's suitability for diverse optoelectronic and radiation detection applications is analyzed, and this study examines how PhC implementation can enhance these properties. Methodologically, the emission spectra is analyzed from 5.9 keV X-ray sources, decay curves, pulse height spectra in response to <sup>241</sup>Am 5.5 MeV alpha-rays, and photoluminescence spectra induced by UV excitation. The findings demonstrate a substantial increase in quantum efficiency for PhC GaN, nearly tripling the light yield that of conventional plain GaN thin films under the UV excitation. The enhancement is predominantly attributed to the PhC GaN's proficiency in guiding light at 550 nm, a feature indicative of its spectral filtering capabilities, as detailed in the study. Furthermore, side-band scintillations, stemming from inherent materials like Chromium that generate scintillations at diverse wavelengths, are effectively mitigated. A key finding of this study is the effective detection of light not only at the rear but also along the lateral sides of the films, offering new possibilities for radiation detector design and architecture.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 1","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400075","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The search for alternatives to Pb-based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb-free options. Tin (Sn) and bismuth (Bi) are promising candidates, given their similar ionic radii to Pb and the isoelectronic nature of Pb2+ and Bi3+, which suggest comparable chemical properties. Among these, CsSnBr3 and Cs3Bi2Br9 are relatively underexplored but offer lower toxicity and enhanced stability while demonstrating optoelectronic properties suitable for various applications. In this study, CsSnBr3 and Cs3Bi2Br9 nanocrystals are synthesized using a colloidal method and integrated into Schottky diodes. X-ray photoelectron spectroscopy analysis of the surface chemistry confirms improved thermal and phase stability compared to Pb-based perovskites. Schottky diode parameters, including ideality factor, barrier height, and series resistance are assessed using conventional thermionic emission, modified Cheung's, and Norde's models. The Cs3Bi2Br9-based Schottky diode exhibits superior electrical performance with the lowest series resistance and optimal barrier height. Electrical impedance spectroscopy results indicated that CsSnBr3 has higher resistances and lower capacitances than Cs3Bi2Br9, reflecting lower charge carrier mobility and more defects, although the R1C1 regions in both materials demonstrated faster charge dynamics, making them ideal for high-speed applications.
{"title":"CsSnBr3 and Cs3Bi2Br9: Structural, Optical Characteristics, and Application in a Schottky Barrier Diode","authors":"Olusola Akinbami, Thelma Majola, Grace Nomthandazo Ngubeni, Kalenga Pierre Mubiayi, Nosipho Moloto","doi":"10.1002/adpr.202300337","DOIUrl":"https://doi.org/10.1002/adpr.202300337","url":null,"abstract":"<p>The search for alternatives to Pb-based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb-free options. Tin (Sn) and bismuth (Bi) are promising candidates, given their similar ionic radii to Pb and the isoelectronic nature of Pb<sup>2+</sup> and Bi<sup>3+</sup>, which suggest comparable chemical properties. Among these, CsSnBr<sub>3</sub> and Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> are relatively underexplored but offer lower toxicity and enhanced stability while demonstrating optoelectronic properties suitable for various applications. In this study, CsSnBr<sub>3</sub> and Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub> nanocrystals are synthesized using a colloidal method and integrated into Schottky diodes. X-ray photoelectron spectroscopy analysis of the surface chemistry confirms improved thermal and phase stability compared to Pb-based perovskites. Schottky diode parameters, including ideality factor, barrier height, and series resistance are assessed using conventional thermionic emission, modified Cheung's, and Norde's models. The Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub>-based Schottky diode exhibits superior electrical performance with the lowest series resistance and optimal barrier height. Electrical impedance spectroscopy results indicated that CsSnBr<sub>3</sub> has higher resistances and lower capacitances than Cs<sub>3</sub>Bi<sub>2</sub>Br<sub>9</sub>, reflecting lower charge carrier mobility and more defects, although the <i>R</i><sub>1</sub><i>C</i><sub>1</sub> regions in both materials demonstrated faster charge dynamics, making them ideal for high-speed applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 12","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300337","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuang Yuan, Jiayu Zhou, Qixing Meng, Rui Zhang, Yufei Gao, Minghou Liu, Hong Ye, Linshuang Long
In nature, dynamic camouflage is performed by cephalopods and reptiles. Humans attempt to perform dynamic camouflage by employing display devices to show the surrounding background. In this work, a switchable camouflage device based on an electrophoretic display (EPD) is proposed. Color-filter EPDs display colors by reflecting light through the color filters and black-and-white EPDs. The number of subpixels is found to be an important factor on color performance. To improve the poor saturation of color-filter EPDs, the number of color filter subpixels is reduced. Compared with filters with three and four subpixels, a dual-subpixel filter proposed in this work significantly improves the average saturation of red, green, and blue colors, with increases of 49% and 112%, respectively. Subsequently, the spectral characteristics of the color filter and black-and-white EPD are optimized by using genetic algorithm to reduce the average color difference between the display and the switchable target color, which can be reduced as low as 0.18. To visually demonstrate the color reproduction capability of the dual-subpixel EPD, sample applications including the switchable vegetation and digital camouflages are designed and have a high degree of agreement with the background. In this work, an innovative and effective approach is introduced to dynamic camouflage.
{"title":"Switchable Camouflage via Reflective Display","authors":"Shuang Yuan, Jiayu Zhou, Qixing Meng, Rui Zhang, Yufei Gao, Minghou Liu, Hong Ye, Linshuang Long","doi":"10.1002/adpr.202400112","DOIUrl":"https://doi.org/10.1002/adpr.202400112","url":null,"abstract":"<p>In nature, dynamic camouflage is performed by cephalopods and reptiles. Humans attempt to perform dynamic camouflage by employing display devices to show the surrounding background. In this work, a switchable camouflage device based on an electrophoretic display (EPD) is proposed. Color-filter EPDs display colors by reflecting light through the color filters and black-and-white EPDs. The number of subpixels is found to be an important factor on color performance. To improve the poor saturation of color-filter EPDs, the number of color filter subpixels is reduced. Compared with filters with three and four subpixels, a dual-subpixel filter proposed in this work significantly improves the average saturation of red, green, and blue colors, with increases of 49% and 112%, respectively. Subsequently, the spectral characteristics of the color filter and black-and-white EPD are optimized by using genetic algorithm to reduce the average color difference between the display and the switchable target color, which can be reduced as low as 0.18. To visually demonstrate the color reproduction capability of the dual-subpixel EPD, sample applications including the switchable vegetation and digital camouflages are designed and have a high degree of agreement with the background. In this work, an innovative and effective approach is introduced to dynamic camouflage.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 3","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400112","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143530747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ricardo E. da Silva, David John Webb, Cristiano Monteiro de Barros Cordeiro, Marcos Antonio Ruggieri Franco
High-frequency broadband ultrasound in nested antiresonant hollow core fibers (NANFs) is investigated for the first time. NANFs have remarkable features enabling high-resolution microscale optoacoustic imaging sensors and neurostimulators. Solid optical fibers have been successfully employed to measure and generate ultrasonic signals, however, they face issues concerning attenuation, limited frequency range, bandwidth, and spatial resolution. Herein, highly efficient ultrasonic propagation in NANFs from 10 to 100 MHz is numerically demonstrated. The induced pressures and sensing responsivity are evaluated in detail, and important parameters for the development of ultrasonic devices are reviewed. High pressures (up to 234 MPa) and sensing responsivities (up to −207 dB) are tuned over 90 MHz range by changing the diameters of two distinct NANF geometries. To the best of knowledge, this is the widest bandwidth reported using similar diameter fibers. The results are a significant advance for fiber-based ultrasonic sensors and transmitters, contributing to improve their efficiency and microscale spatial resolution for the detection, diagnosis, and treatment of diseases in biomedical applications.
{"title":"Highly Amplified Broadband Ultrasound in Antiresonant Hollow Core Fibers","authors":"Ricardo E. da Silva, David John Webb, Cristiano Monteiro de Barros Cordeiro, Marcos Antonio Ruggieri Franco","doi":"10.1002/adpr.202400086","DOIUrl":"https://doi.org/10.1002/adpr.202400086","url":null,"abstract":"<p>High-frequency broadband ultrasound in nested antiresonant hollow core fibers (NANFs) is investigated for the first time. NANFs have remarkable features enabling high-resolution microscale optoacoustic imaging sensors and neurostimulators. Solid optical fibers have been successfully employed to measure and generate ultrasonic signals, however, they face issues concerning attenuation, limited frequency range, bandwidth, and spatial resolution. Herein, highly efficient ultrasonic propagation in NANFs from 10 to 100 MHz is numerically demonstrated. The induced pressures and sensing responsivity are evaluated in detail, and important parameters for the development of ultrasonic devices are reviewed. High pressures (up to 234 MPa) and sensing responsivities (up to −207 dB) are tuned over 90 MHz range by changing the diameters of two distinct NANF geometries. To the best of knowledge, this is the widest bandwidth reported using similar diameter fibers. The results are a significant advance for fiber-based ultrasonic sensors and transmitters, contributing to improve their efficiency and microscale spatial resolution for the detection, diagnosis, and treatment of diseases in biomedical applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 2","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400086","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143187061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden
The AlGaN materials system has been extensively studied in order to improve the efficiency of UV-B and UV-C light-emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter-wavelength operation results in increased activation energy of Mg dopants, resulting in low p-doping. Although p-doped h-BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p-doped AlGaN, there have not been demonstrations of LEDs fabricated from p-doped h-BN/AlGaN heterostructures. Such unique heterostructures combine 2D p-doped h-BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p-doped h-BN/AlGaN multiple quantum wells (MQWs)/n-AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p-doped h-BN into AlGaN and provide a proof of concept that p-doped h-BN can be an alternative hole injection layer for UV LEDs.
{"title":"Novel 2D/3D Heterojunction for UV Light-Emitting Diodes Using Hexagonal Boron Nitride as Hole Injection Layer","authors":"Andre Perepeliuc, Rajat Gujrati, Phuong Vuong, Vishnu Ottapilakkal, Thi May Tran, Mohamed Bouras, Ali Kassem, Ashutosh Srivastava, Tarik Moudakir, Gilles Patriarche, Paul Voss, Suresh Sundaram, Jean Paul Salvestrini, Abdallah Ougazzaden","doi":"10.1002/adpr.202400092","DOIUrl":"https://doi.org/10.1002/adpr.202400092","url":null,"abstract":"<p>The AlGaN materials system has been extensively studied in order to improve the efficiency of UV-B and UV-C light-emitting diodes (LEDs). While progress has been made, significant challenges remain at shorter wavelengths. Most notably, increased Al composition for shorter-wavelength operation results in increased activation energy of Mg dopants, resulting in low p-doping. Although p-doped h-BN, with a bandgap of 5.9 eV, has been proposed as a potential replacement of p-doped AlGaN, there have not been demonstrations of LEDs fabricated from p-doped h-BN/AlGaN heterostructures. Such unique heterostructures combine 2D p-doped h-BN materials with 3D AlGaN materials. Herein, fabrication and characterization of p-doped h-BN/AlGaN multiple quantum wells (MQWs)/n-AlGaN LEDs, demonstrating emission of light at 290 nm corresponding to the AlGaN MQWs, with weaker emission at 262 nm corresponding to the AlGaN barrier, are reported. These results conclusively show hole injection through p-doped h-BN into AlGaN and provide a proof of concept that p-doped h-BN can be an alternative hole injection layer for UV LEDs.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 2","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400092","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143187035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}