Hermite–Gaussian (HG) modes are an orthogonal set of solutions to the paraxial wave equation possessing distinct spatial intensity variations, which are important in many optical applications. Here, anisotropic second- and third-harmonic HG beam generation is demonstrated with ultrathin niobium oxide diiodide (NbOI2) grating holograms to produce the nonlinear HG01 and HG10 modes. It is shown that the generated second-harmonic HG modes exhibit a high anisotropy ratio reaching a large value of 14.95, while the simultaneously generated third-harmonic HG modes have an anisotropy ratio up to 4.85. The relative magnitudes of the second- and third-order nonlinear susceptibility tensor elements of NbOI2 crystal are extracted by analyzing the polarization-dependent nonlinear emission. These demonstrations provide new opportunities for building functional polarization-sensitive nonlinear optical devices used for future integrated photonic chips, optical computing, and optical communication.
{"title":"Anisotropic Second- and Third-Harmonic Hermite–Gaussian Beam Generation with NbOI2 Holograms","authors":"Jayanta Deka, Jie Gao, Xiaodong Yang","doi":"10.1002/adpr.202500188","DOIUrl":"https://doi.org/10.1002/adpr.202500188","url":null,"abstract":"<p>Hermite–Gaussian (HG) modes are an orthogonal set of solutions to the paraxial wave equation possessing distinct spatial intensity variations, which are important in many optical applications. Here, anisotropic second- and third-harmonic HG beam generation is demonstrated with ultrathin niobium oxide diiodide (NbOI<sub>2</sub>) grating holograms to produce the nonlinear HG<sub>01</sub> and HG<sub>10</sub> modes. It is shown that the generated second-harmonic HG modes exhibit a high anisotropy ratio reaching a large value of 14.95, while the simultaneously generated third-harmonic HG modes have an anisotropy ratio up to 4.85. The relative magnitudes of the second- and third-order nonlinear susceptibility tensor elements of NbOI<sub>2</sub> crystal are extracted by analyzing the polarization-dependent nonlinear emission. These demonstrations provide new opportunities for building functional polarization-sensitive nonlinear optical devices used for future integrated photonic chips, optical computing, and optical communication.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 12","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500188","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145666065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Metasurfaces offer precise manipulation of light through engineered subwavelength nanostructures. However, metalenses are challenging to design such that they simultaneously achieve wide field of view (WFOV), achromatic focusing at red (R), green (G), and blue (B), and high numerical aperture (NA). Here, an RGB-achromatic bilayer metalens capable of wide-angle imaging with a field of view of 80° and a NA of 0.65 is proposed. Utilizing silicon nitride bilayer meta-atoms, the metalens maintains consistent focal lengths across RGB even at oblique incident angles up to 40°. Simulation results verify superior achromatic focusing and reduced coma aberration compared to conventional hyperbolic metalenses. This approach significantly enhances practical applicability of metalenses in digital imaging and display systems.
{"title":"Design of a Bilayer Metalens for Red, Green, and Blue-Achromatic Imaging with Wide Field of View","authors":"Seong-Won Moon, Hyeonsu Heo, Dong Kyo Oh, Eunji Lee, Junsuk Rho","doi":"10.1002/adpr.202500107","DOIUrl":"https://doi.org/10.1002/adpr.202500107","url":null,"abstract":"<p>Metasurfaces offer precise manipulation of light through engineered subwavelength nanostructures. However, metalenses are challenging to design such that they simultaneously achieve wide field of view (WFOV), achromatic focusing at red (R), green (G), and blue (B), and high numerical aperture (NA). Here, an RGB-achromatic bilayer metalens capable of wide-angle imaging with a field of view of 80° and a NA of 0.65 is proposed. Utilizing silicon nitride bilayer meta-atoms, the metalens maintains consistent focal lengths across RGB even at oblique incident angles up to 40°. Simulation results verify superior achromatic focusing and reduced coma aberration compared to conventional hyperbolic metalenses. This approach significantly enhances practical applicability of metalenses in digital imaging and display systems.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 11","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500107","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rapid advancement in optoelectronic devices has sparked intense interest in wide-bandgap semiconductors for UV and X-ray detection. While Ga2O3 has emerged as a promising material for photodetection, a quantitative understanding of the relationships between material properties, device structures, and detection performance remains challenging. This analysis reveals that among different types of UV photodetectors, phototransistors and avalanche devices can achieve superior responsivity (up to 107 A W−1) and detectivity (up to 1018 Jones), while for X-ray detection, structures based on Ga2O3-derived materials demonstrate the highest sensitivity (up to 109 μC Gyair−1 cm−2). Insights into their gain mechanisms and performance characteristics for various X-ray detectors, especially with heterojunction and cold cathode designs are provided. In summary, this systematic comparison of growth conditions, device structures, and detection capabilities provides a valuable reference for future developments in Ga2O3-based UV and X-ray detection systems.
光电子器件的快速发展引起了人们对用于紫外和x射线探测的宽带隙半导体的浓厚兴趣。虽然Ga2O3已经成为一种很有前途的光检测材料,但对材料性质、器件结构和检测性能之间关系的定量理解仍然具有挑战性。分析表明,在不同类型的紫外光电探测器中,光电晶体管和雪崩器件具有较高的响应率(高达107 A W−1)和探测率(高达1018 Jones),而对于x射线探测,基于ga2o3衍生材料的结构具有最高的灵敏度(高达109 μC Gyair−1 cm−2)。深入了解其增益机制和性能特点的各种x射线探测器,特别是异质结和冷阴极设计提供。总之,这种生长条件、器件结构和检测能力的系统比较为未来基于ga2o3的紫外和x射线检测系统的发展提供了有价值的参考。
{"title":"State-of-the-Art Solar Blind and X-Ray Photodetectors Based on Gallium Oxide","authors":"Catherine Langpoklakpam, Siddharth Rana, Chi-Hsiang Hsieh, Jitendra Pratap Singh, Po-Tsung Lee, Ray-Hua Horng, Chang-Ching Tu, Hao-Chung Kuo","doi":"10.1002/adpr.202500008","DOIUrl":"https://doi.org/10.1002/adpr.202500008","url":null,"abstract":"<p>The rapid advancement in optoelectronic devices has sparked intense interest in wide-bandgap semiconductors for UV and X-ray detection. While Ga<sub>2</sub>O<sub>3</sub> has emerged as a promising material for photodetection, a quantitative understanding of the relationships between material properties, device structures, and detection performance remains challenging. This analysis reveals that among different types of UV photodetectors, phototransistors and avalanche devices can achieve superior responsivity (up to 10<sup>7</sup> A W<sup>−1</sup>) and detectivity (up to 10<sup>18</sup> Jones), while for X-ray detection, structures based on Ga<sub>2</sub>O<sub>3</sub>-derived materials demonstrate the highest sensitivity (up to 10<sup>9</sup> μC Gy<sub>air</sub><sup>−1</sup> cm<sup>−2</sup>). Insights into their gain mechanisms and performance characteristics for various X-ray detectors, especially with heterojunction and cold cathode designs are provided. In summary, this systematic comparison of growth conditions, device structures, and detection capabilities provides a valuable reference for future developments in Ga<sub>2</sub>O<sub>3</sub>-based UV and X-ray detection systems.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 11","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500008","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Morris E. Olumba, David B. Turner, Lauren M. Loftus, Kyle G. Berry, Timothy D. Gustafson, Prescott E. Evans, Rick H. Watkins, Tod A. Grusenmeyer, Michael C. Brennan
Lanthanide-activated CsPbX3 perovskites (Ln3+:CsPbCl3) hold immense promise for the development of next-generation solid-state lasers. Realizing their full potential hinges on achieving controlled lanthanide concentrations with homogenous distribution throughout the perovskite host—a considerable material processing challenge that hinders widespread application. This work introduces a robust, scalable mechanochemical synthesis for producing both singly doped Ln3+:CsPbCl3 (Ln3+ = Pr3+, Nd3+, Ho3+, Er3+, Yb3+) as well as co-doped Ln3+(I)/Ln3+(II):CsPbCl3 (Ln3+(I)/Ln3+(II) = Nd3+/Yb3+, Ho3+/Pr3+, Er3+/Pr3+) microcrystalline powders. Complementary structural characterization techniques (e.g., X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, and X-ray fluorescence) directly quantify doping concentration and confirm homogeneous Ln3+ distribution throughout the powders. Detailed photoluminescence (PL), PL excitation, and PL lifetime measurements reveal distinct emissive and absorptive states in the visible to short-wave infrared (IR) stemming from the dopants. Melt-grown crystals, derived from mechanochemically prepared powders, exhibit enhanced PL lifetimes compared to their source powders and are transparent at IR emission wavelengths. Overall, this mechanochemical approach allows for considerable control over dopant incorporation, yielding powders that are well-suited for the melt-growth of rare-earth-doped single crystals and the future development of halide perovskite-based solid-state lasers.
{"title":"Photoluminescence of Mechanochemically Manufactured Rare-Earth Doped CsPbCl3 Microcrystals","authors":"Morris E. Olumba, David B. Turner, Lauren M. Loftus, Kyle G. Berry, Timothy D. Gustafson, Prescott E. Evans, Rick H. Watkins, Tod A. Grusenmeyer, Michael C. Brennan","doi":"10.1002/adpr.202500047","DOIUrl":"https://doi.org/10.1002/adpr.202500047","url":null,"abstract":"<p>Lanthanide-activated CsPbX<sub>3</sub> perovskites (Ln<sup>3+</sup>:CsPbCl<sub>3</sub>) hold immense promise for the development of next-generation solid-state lasers. Realizing their full potential hinges on achieving controlled lanthanide concentrations with homogenous distribution throughout the perovskite host—a considerable material processing challenge that hinders widespread application. This work introduces a robust, scalable mechanochemical synthesis for producing both singly doped Ln<sup>3+</sup>:CsPbCl<sub>3</sub> (Ln<sup>3+</sup> = Pr<sup>3+</sup>, Nd<sup>3+</sup>, Ho<sup>3+</sup>, Er<sup>3+</sup>, Yb<sup>3+</sup>) as well as co-doped Ln<sup>3+(I)</sup>/Ln<sup>3+(II)</sup>:CsPbCl<sub>3</sub> (Ln<sup>3+(I)</sup>/Ln<sup>3+(II)</sup> = Nd<sup>3+</sup>/Yb<sup>3+</sup>, Ho<sup>3+</sup>/Pr<sup>3+</sup>, Er<sup>3+</sup>/Pr<sup>3+</sup>) microcrystalline powders. Complementary structural characterization techniques (e.g., X-ray diffraction, X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, and X-ray fluorescence) directly quantify doping concentration and confirm homogeneous Ln<sup>3+</sup> distribution throughout the powders. Detailed photoluminescence (PL), PL excitation, and PL lifetime measurements reveal distinct emissive and absorptive states in the visible to short-wave infrared (IR) stemming from the dopants. Melt-grown crystals, derived from mechanochemically prepared powders, exhibit enhanced PL lifetimes compared to their source powders and are transparent at IR emission wavelengths. Overall, this mechanochemical approach allows for considerable control over dopant incorporation, yielding powders that are well-suited for the melt-growth of rare-earth-doped single crystals and the future development of halide perovskite-based solid-state lasers.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 11","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500047","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Due to their remarkable performance and exceptional color purity, the multiresonance thermally activated delayed fluorescent (MR-TADF) materials are prioritized in the research of narrowband organic light-emitting diodes (OLEDs). However, the atomic numbers of elements such as carbon (C), boron (B), and nitrogen (N) used for B–N-based MR-TADF system are relatively small, which offers limited spin-orbit coupling (SOC) strength. Furthermore, the singular short-range charge-transfer (SRCT) characteristics of MR-TADF emitters also result in the small SOC matrix elements between singlet and triplet excited states. Both lead to a slow reverse intersystem crossing (RISC) process, which constrains their further development in OLED devices. This review focuses on the molecular design strategies aimed at enhancing the SOC, including heavy atom and long-range charge-transfer (LRCT) strategies, with the objective of systematizing knowledge in this domain to facilitate the prosperous development of MR-TADF emitters with high RISC rates. Finally, the challenges and prospects in this area are discussed comprehensively at the end of the review.
{"title":"Recent Progress in Strategies to Enhance the Spin-Orbit Coupling of Multiresonance Thermally Activated Delayed Fluorescent Materials for Narrowband Organic Light-Emitting Diodes","authors":"Hanrui Su, Shan Huang, Runda Guo, Lei Wang","doi":"10.1002/adpr.202500177","DOIUrl":"https://doi.org/10.1002/adpr.202500177","url":null,"abstract":"<p>Due to their remarkable performance and exceptional color purity, the multiresonance thermally activated delayed fluorescent (MR-TADF) materials are prioritized in the research of narrowband organic light-emitting diodes (OLEDs). However, the atomic numbers of elements such as carbon (C), boron (B), and nitrogen (N) used for B–N-based MR-TADF system are relatively small, which offers limited spin-orbit coupling (SOC) strength. Furthermore, the singular short-range charge-transfer (SRCT) characteristics of MR-TADF emitters also result in the small SOC matrix elements between singlet and triplet excited states. Both lead to a slow reverse intersystem crossing (RISC) process, which constrains their further development in OLED devices. This review focuses on the molecular design strategies aimed at enhancing the SOC, including heavy atom and long-range charge-transfer (LRCT) strategies, with the objective of systematizing knowledge in this domain to facilitate the prosperous development of MR-TADF emitters with high RISC rates. Finally, the challenges and prospects in this area are discussed comprehensively at the end of the review.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 11","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500177","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Poly(ethylene terephthalate) (PET) films are widely used in flexible electronics and optoelectronics, where mechanical durability and optical performance under strain are essential for device reliability. This study investigates the effects of cold-drawing amorphous PET under ambient conditions on its optical and molecular characteristics, using ultraviolet–visible (UV–Vis) and Raman spectroscopy. It examines how varying strain levels, from 0% (unstretched) to 30%, affect transparency, vibrational modes, and molecular reorganization. UV–Vis absorbance measurements, performed ex-situ after strain release, reveal persistent changes in light transmission, including up to 100% increased absorption in the UVA and visible regions, particularly following large deformations. Raman spectra show that strains above 5% cause irreversible shifts in vibrational lines and increased full width at half maximum (FWHM). These spectral changes suggest partial molecular reorientation and emerging structural order, consistent with prior reports on cold-drawn amorphous PET. The phonon mode coupled with C-O stretching [O-CH2] shows the strongest response to mechanical stress. This work provides insight into strain-induced optical and structural changes in PET, informing strategies to improve the performance of PET-based devices in strain-sensitive applications such as organic solar cells (OSCs), organic light-emitting diodes (OLEDs), and flexible sensors.
{"title":"Strain-Induced Optical and Molecular Transformations in Poly(Ethylene Terephthalate) Films for Organic Electronic Applications","authors":"Mahya Ghorab, Ayush K. Ranga, Patrice Donfack, Arnulf Materny, Veit Wagner, Mojtaba Joodaki","doi":"10.1002/adpr.202500081","DOIUrl":"https://doi.org/10.1002/adpr.202500081","url":null,"abstract":"<p>Poly(ethylene terephthalate) (PET) films are widely used in flexible electronics and optoelectronics, where mechanical durability and optical performance under strain are essential for device reliability. This study investigates the effects of cold-drawing amorphous PET under ambient conditions on its optical and molecular characteristics, using ultraviolet–visible (UV–Vis) and Raman spectroscopy. It examines how varying strain levels, from 0% (unstretched) to 30%, affect transparency, vibrational modes, and molecular reorganization. UV–Vis absorbance measurements, performed ex-situ after strain release, reveal persistent changes in light transmission, including up to 100% increased absorption in the UVA and visible regions, particularly following large deformations. Raman spectra show that strains above 5% cause irreversible shifts in vibrational lines and increased full width at half maximum (FWHM). These spectral changes suggest partial molecular reorientation and emerging structural order, consistent with prior reports on cold-drawn amorphous PET. The phonon mode coupled with C-O stretching [O-CH<sub>2</sub>] shows the strongest response to mechanical stress. This work provides insight into strain-induced optical and structural changes in PET, informing strategies to improve the performance of PET-based devices in strain-sensitive applications such as organic solar cells (OSCs), organic light-emitting diodes (OLEDs), and flexible sensors.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 11","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202500081","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145436156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liang Wu, Xi Zhang, Yi Fu, Kai Kang, Xin Ding, Jianquan Yao, Zhiyong Wang, Jiaguang Han, Weili Zhang, Adv. Photonics Res.2022, 3, 2200033, https://doi.org/10.1002/adpr.202200033
The published version lacks acknowledgment of the core funding from: This research was funded by the National Natural Science Foundation of China (61735010, U2230114), and the National Key Research and Development Program of China (2022YFA1203502, 2017YFA0700202).
{"title":"Correction to “Ultra-Broadband Terahertz Polarization Conversion Enabled by All-Dielectric Grating Structures”","authors":"","doi":"10.1002/adpr.70054","DOIUrl":"10.1002/adpr.70054","url":null,"abstract":"<p>Liang Wu, Xi Zhang, Yi Fu, Kai Kang, Xin Ding, Jianquan Yao, Zhiyong Wang, Jiaguang Han, Weili Zhang, <i>Adv. Photonics Res.</i> \u0000 <b>2022</b>, <i>3</i>, 2200033, https://doi.org/10.1002/adpr.202200033\u0000 </p><p>The published version lacks acknowledgment of the core funding from: This research was funded by the National Natural Science Foundation of China (61735010, U2230114), and the National Key Research and Development Program of China (2022YFA1203502, 2017YFA0700202).</p><p>We apologize for this error.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 9","pages":""},"PeriodicalIF":3.9,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.70054","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145022257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}