Pub Date : 2025-11-11DOI: 10.1109/LMWT.2025.3629107
Uichan Park;Taeyeong Yoon;Jungsuek Oh
This letter presents a compact and highly accurate active bidirectional phase shifter (ABPS) with reduced root-mean-square (rms) errors in 28-nm CMOS. The proposed ABPS integrates a transformer-based hybrid coupler (THC) for I/Q signal generation and combining, a bidirectional amplification core, and a Marchand balun-based rat-race coupler (MRRC) for precise signal subtraction and division. A three-stack single Gilbert cell (GC) architecture, arranged in an anti-parallel configuration, enables both amplitude scaling and 180° phase inversion within a compact footprint. An optimized novel electromagnetic (EM) structure is implemented to achieve high port-to-port isolation, ensuring precise phase and magnitude control. The proposed ABPS supports a 6-bit phase shift operation across a full 360° range and demonstrates rms gain and phase errors of 0.36 dB and 2.1°, respectively, in both forward and backward directions. The proposed ABPS was fabricated in a compact area of $1.08times 0.42$ mm2, consuming 16.2 mW.
{"title":"A Compact Active Bidirectional Phase Shifter Employing a Highly Isolated Single Gilbert Cell","authors":"Uichan Park;Taeyeong Yoon;Jungsuek Oh","doi":"10.1109/LMWT.2025.3629107","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3629107","url":null,"abstract":"This letter presents a compact and highly accurate active bidirectional phase shifter (ABPS) with reduced root-mean-square (rms) errors in 28-nm CMOS. The proposed ABPS integrates a transformer-based hybrid coupler (THC) for I/Q signal generation and combining, a bidirectional amplification core, and a Marchand balun-based rat-race coupler (MRRC) for precise signal subtraction and division. A three-stack single Gilbert cell (GC) architecture, arranged in an anti-parallel configuration, enables both amplitude scaling and 180° phase inversion within a compact footprint. An optimized novel electromagnetic (EM) structure is implemented to achieve high port-to-port isolation, ensuring precise phase and magnitude control. The proposed ABPS supports a 6-bit phase shift operation across a full 360° range and demonstrates rms gain and phase errors of 0.36 dB and 2.1°, respectively, in both forward and backward directions. The proposed ABPS was fabricated in a compact area of <inline-formula> <tex-math>$1.08times 0.42$ </tex-math></inline-formula> mm<sup>2</sup>, consuming 16.2 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2109-2112"},"PeriodicalIF":3.4,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter proposes an impedance estimation method for the floating electrode multilayered ceramic capacitors (FE MLCCs) based on multiconductor transmission line (MTL) theory. The impedance of FE MLCC is a key factor in the design and optimization of electronic circuits because it directly influences system performance. However, impedance extraction through measurement or full-wave simulation is both time-consuming and computationally intensive. Therefore, it is necessary to predict the impedance of FE MLCC rapidly and efficiently. In the proposed method, the FE MLCC is divided into two subblocks, and the impedance of each subblock can be derived analytically based on the MTL theory, while considering both vertical and lateral inductive coupling among the electrodes. The proposed method was verified by comparing it with simulation results, showing maximum errors of 4.85% and 10.74% for self-resonant frequency (SRF) and equivalent series inductance, respectively. In addition, the proposed method achieves up to 3112 times faster computation compared with full-wave simulation.
{"title":"A Method for Estimating Impedance of Floating Electrode Multilayered Ceramic Capacitor","authors":"Sanguk Lee;Jaewon Rhee;Seunghun Ryu;Seonghi Lee;Hyunwoo Kim;Hongseok Kim;Seungyoung Ahn","doi":"10.1109/LMWT.2025.3627178","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3627178","url":null,"abstract":"This letter proposes an impedance estimation method for the floating electrode multilayered ceramic capacitors (FE MLCCs) based on multiconductor transmission line (MTL) theory. The impedance of FE MLCC is a key factor in the design and optimization of electronic circuits because it directly influences system performance. However, impedance extraction through measurement or full-wave simulation is both time-consuming and computationally intensive. Therefore, it is necessary to predict the impedance of FE MLCC rapidly and efficiently. In the proposed method, the FE MLCC is divided into two subblocks, and the impedance of each subblock can be derived analytically based on the MTL theory, while considering both vertical and lateral inductive coupling among the electrodes. The proposed method was verified by comparing it with simulation results, showing maximum errors of 4.85% and 10.74% for self-resonant frequency (SRF) and equivalent series inductance, respectively. In addition, the proposed method achieves up to 3112 times faster computation compared with full-wave simulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2125-2128"},"PeriodicalIF":3.4,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-07DOI: 10.1109/LMWT.2025.3624929
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3624929","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3624929","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 11","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2025-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11234902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145455825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a novel design method for wideband low-noise amplifiers (LNAs), which decouples the realization procedure of input noise matching, input impedance matching, and gain flatness. The input matching network is designed to realize wideband noise matching. Then, the degeneration inductor and T-type interstage matching network with magnetic coupling are employed to meet the required range of the interstage impedance mismatch level to achieve wide input impedance bandwidth. The gain bandwidth is enhanced by designing the impedance mismatch related to output matching network, without affecting the input matching. For demonstration, a three-stage E-/W-band LNA has been implemented using a 0.13-$mu $ m SiGe BiCMOS technology. The LNA achieves a peak gain of 24.1 dB with a 3-dB gain bandwidth of 53 GHz, less than −10-dB $vert S_{11} vert $ bandwidth of 50 GHz, and a low noise figure (NF) ranging from 3.8 to 6.9 dB across the W-band, while consuming power of 23 mW.
{"title":"A 57–110-GHz LNA With Novel Bandwidth Enhancement Technique in 130-nm SiGe BiCMOS","authors":"Zhan Chen;Chun-Xia Zhou;Guoxiao Cheng;Wei Kang;Wen Wu;Zhou Shu;Yongxin Guo","doi":"10.1109/LMWT.2025.3627232","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3627232","url":null,"abstract":"This letter presents a novel design method for wideband low-noise amplifiers (LNAs), which decouples the realization procedure of input noise matching, input impedance matching, and gain flatness. The input matching network is designed to realize wideband noise matching. Then, the degeneration inductor and T-type interstage matching network with magnetic coupling are employed to meet the required range of the interstage impedance mismatch level to achieve wide input impedance bandwidth. The gain bandwidth is enhanced by designing the impedance mismatch related to output matching network, without affecting the input matching. For demonstration, a three-stage E-/W-band LNA has been implemented using a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe BiCMOS technology. The LNA achieves a peak gain of 24.1 dB with a 3-dB gain bandwidth of 53 GHz, less than −10-dB <inline-formula> <tex-math>$vert S_{11} vert $ </tex-math></inline-formula> bandwidth of 50 GHz, and a low noise figure (NF) ranging from 3.8 to 6.9 dB across the W-band, while consuming power of 23 mW.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2113-2116"},"PeriodicalIF":3.4,"publicationDate":"2025-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents an interlaboratory comparison of multiline thru-reflect-line (mTRL) on-wafer calibrations on a commercial high-resistivity silicon (HRSi) substrate at D-band frequencies (110–170 GHz). Two national metrology institutes (KRISS and PTB) measured identical calibration structures using the same probe types and techniques, enabling an in-depth analysis of spatial measurement variation and reproducibility between laboratories. Overall, the results demonstrate high consistency with repeatable measurements achieved by different operators and over multiple months, showing negligible drift and affirming the stability of the calibration process. These findings demonstrate that, when best practices are followed, on-wafer calibrations on HRSi substrates can be reliably transferred between laboratories, with residual differences being attributable to known parasitic effects and boundary-condition influences.
{"title":"Interlaboratory Comparison of Commercial High-Resistivity Silicon Calibration Substrate at D-Band","authors":"Hyunji Koo;Gia Ngoc Phung;Uwe Arz;Chihyun Cho;Jae-Yong Kwon","doi":"10.1109/LMWT.2025.3625538","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3625538","url":null,"abstract":"This article presents an interlaboratory comparison of multiline thru-reflect-line (mTRL) on-wafer calibrations on a commercial high-resistivity silicon (HRSi) substrate at D-band frequencies (110–170 GHz). Two national metrology institutes (KRISS and PTB) measured identical calibration structures using the same probe types and techniques, enabling an in-depth analysis of spatial measurement variation and reproducibility between laboratories. Overall, the results demonstrate high consistency with repeatable measurements achieved by different operators and over multiple months, showing negligible drift and affirming the stability of the calibration process. These findings demonstrate that, when best practices are followed, on-wafer calibrations on HRSi substrates can be reliably transferred between laboratories, with residual differences being attributable to known parasitic effects and boundary-condition influences.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2129-2132"},"PeriodicalIF":3.4,"publicationDate":"2025-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11224371","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-24DOI: 10.1109/LMWT.2025.3620322
Yiming Zhang;Yong Zhang;Huali Zhu;Haomiao Wei;Bo Yan
This letter presents a high-isolation terahertz (THz) power combining frequency tripler structure. Each signal path incorporates a balanced tripler topology. The power dividing and combining networks are implemented with $90^{circ }~3$ -dB directional couplers, providing high interchannel isolation while enabling coherent combination of the third-harmonic signals through quadrature phase characteristics. A 260-GHz power combining frequency tripler has been demonstrated based on this prototype. The measured results demonstrate that the tripler achieves an output power ranging from 10 to 37 mW across the 240–288 GHz band with 500 mW pump power.
{"title":"A 260-GHz Power Combining Frequency Tripler With High-Isolation","authors":"Yiming Zhang;Yong Zhang;Huali Zhu;Haomiao Wei;Bo Yan","doi":"10.1109/LMWT.2025.3620322","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3620322","url":null,"abstract":"This letter presents a high-isolation terahertz (THz) power combining frequency tripler structure. Each signal path incorporates a balanced tripler topology. The power dividing and combining networks are implemented with <inline-formula> <tex-math>$90^{circ }~3$ </tex-math></inline-formula>-dB directional couplers, providing high interchannel isolation while enabling coherent combination of the third-harmonic signals through quadrature phase characteristics. A 260-GHz power combining frequency tripler has been demonstrated based on this prototype. The measured results demonstrate that the tripler achieves an output power ranging from 10 to 37 mW across the 240–288 GHz band with 500 mW pump power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"111-114"},"PeriodicalIF":3.4,"publicationDate":"2025-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-24DOI: 10.1109/LMWT.2025.3612000
Chi Zhang;Liang Kong;Shiyuan Li;Kebin Liu;Yunlong Cao;Chong He
An amplitude-phase measurement method based on time modulation (TM-based) is proposed, which achieves a high dynamic range by considering the radio frequency (RF) components’ coupling coefficient. Building upon the conventional TM-based measurement framework, the proposed method incorporates the coupling coefficients of the RF switch and splitter into the received signal modeling. Two corresponding techniques are then developed to suppress the coupling-induced errors. Compared with existing TM-based methods, the proposed approach overcomes the limitations imposed by RF switch coupling, achieving a dynamic range of 65 dB in amplitude and 360° in phase with low root mean square error (RMSE). Experimental results confirm the influence of coupling errors on measurement accuracy and validate that the proposed method provides consistent results with a vector network analyzer (VNA).
{"title":"High Dynamic Range Amplitude-Phase Measurement Based on Time Modulation With Coupling Error Suppression","authors":"Chi Zhang;Liang Kong;Shiyuan Li;Kebin Liu;Yunlong Cao;Chong He","doi":"10.1109/LMWT.2025.3612000","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3612000","url":null,"abstract":"An amplitude-phase measurement method based on time modulation (TM-based) is proposed, which achieves a high dynamic range by considering the radio frequency (RF) components’ coupling coefficient. Building upon the conventional TM-based measurement framework, the proposed method incorporates the coupling coefficients of the RF switch and splitter into the received signal modeling. Two corresponding techniques are then developed to suppress the coupling-induced errors. Compared with existing TM-based methods, the proposed approach overcomes the limitations imposed by RF switch coupling, achieving a dynamic range of 65 dB in amplitude and 360° in phase with low root mean square error (RMSE). Experimental results confirm the influence of coupling errors on measurement accuracy and validate that the proposed method provides consistent results with a vector network analyzer (VNA).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"135-138"},"PeriodicalIF":3.4,"publicationDate":"2025-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-23DOI: 10.1109/LMWT.2025.3620493
Shiwei Hu;Bowen Chen;Yanjie Wang
This letter presents an ultralow-power (ULP) 2.4-GHz envelope detector (ED)-first wake-up receiver (WuRx) for wireless body area network (WBAN) applications. A passive ED with the stepped capacitor technique is proposed to achieve a 23% reduction in rise time enhancing the data rate compared to traditional Dickson ED. Furthermore, a current-reused baseband amplifier (BBA) with the self-cascode technique is presented to achieve a 4.4-dB gain enhancement while saving 47% power consumption compared to traditional ones. The prototype chip is fabricated in 40-nm LP CMOS process and the measurement results show that a sensitivity of −59 dBm with a 1-kb/s on−off keying (OOK) data rate is achieved with a total power consumption of only 2.4 nW under a 0.4-V power supply.
{"title":"A 2.4-GHz 2.4-nW Wake-Up Receiver With Stepped Capacitor Envelope Detector and Self-Cascode Technique","authors":"Shiwei Hu;Bowen Chen;Yanjie Wang","doi":"10.1109/LMWT.2025.3620493","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3620493","url":null,"abstract":"This letter presents an ultralow-power (ULP) 2.4-GHz envelope detector (ED)-first wake-up receiver (WuRx) for wireless body area network (WBAN) applications. A passive ED with the stepped capacitor technique is proposed to achieve a 23% reduction in rise time enhancing the data rate compared to traditional Dickson ED. Furthermore, a current-reused baseband amplifier (BBA) with the self-cascode technique is presented to achieve a 4.4-dB gain enhancement while saving 47% power consumption compared to traditional ones. The prototype chip is fabricated in 40-nm LP CMOS process and the measurement results show that a sensitivity of −59 dBm with a 1-kb/s <sc>on−off</small> keying (OOK) data rate is achieved with a total power consumption of only 2.4 nW under a 0.4-V power supply.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"115-118"},"PeriodicalIF":3.4,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-23DOI: 10.1109/LMWT.2025.3620825
Ke Zhang;Ruibin Gao;Zhijiang Dai;Weimin Shi;Mingyu Li;Jingzhou Pang
This letter presents a novel methodology for optimizing the impedance trajectory in the design of a dual-wideband RF-input sequential load-modulated balanced amplifier (SLMBA). The proposed approach employs a continuous Class-F−1 mode (CF−1M) for the control amplifier (CA) in the high-frequency (HF) band and utilizes a harmonic constraint technique to determine the optimal fundamental impedance in the low-frequency (LF) band, ensuring enhanced performance across the entire bandwidth. In addition, the impedance range of the balanced amplifier (BA) is correlated with the impedance trajectory of the CA for improved load modulation. To verify the proposed approach, a 0.7–1.1-/1.6–2.2-GHz dual-wideband SLMBA is implemented, achieving a saturated output power of 42.2–44.3 dBm with 50.4%–75.5% drain efficiency (DE) and 42.0%–53.0% 8-dB back-off DE. When driven by a 20-MHz modulation signal with 8-dB peak-to-average power ratio (PAPR), the prototype exhibits better than −50.0-dBc adjacent channel leakage ratio (ACLR) across the designed band after digital predistortion (DPD).
{"title":"Dual-Wideband Sequential Load-Modulated Balanced Amplifier Employing Continuous Mode and Harmonic Constraint Approach","authors":"Ke Zhang;Ruibin Gao;Zhijiang Dai;Weimin Shi;Mingyu Li;Jingzhou Pang","doi":"10.1109/LMWT.2025.3620825","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3620825","url":null,"abstract":"This letter presents a novel methodology for optimizing the impedance trajectory in the design of a dual-wideband RF-input sequential load-modulated balanced amplifier (SLMBA). The proposed approach employs a continuous Class-F<sup>−1</sup> mode (CF<sup>−1</sup>M) for the control amplifier (CA) in the high-frequency (HF) band and utilizes a harmonic constraint technique to determine the optimal fundamental impedance in the low-frequency (LF) band, ensuring enhanced performance across the entire bandwidth. In addition, the impedance range of the balanced amplifier (BA) is correlated with the impedance trajectory of the CA for improved load modulation. To verify the proposed approach, a 0.7–1.1-/1.6–2.2-GHz dual-wideband SLMBA is implemented, achieving a saturated output power of 42.2–44.3 dBm with 50.4%–75.5% drain efficiency (DE) and 42.0%–53.0% 8-dB back-off DE. When driven by a 20-MHz modulation signal with 8-dB peak-to-average power ratio (PAPR), the prototype exhibits better than −50.0-dBc adjacent channel leakage ratio (ACLR) across the designed band after digital predistortion (DPD).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"99-102"},"PeriodicalIF":3.4,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-16DOI: 10.1109/LMWT.2025.3615134
Kyusik Woo;Gia Thang Bui;Chulhun Seo
This letter presents a compact and high-efficiency triple-band (TB) power amplifier (PA) for wireless power transfer (WPT) applications. The proposed PA employs a dual-class harmonic control network (DHCN), based on inverse Class-C (CI) and Class-F operation, to enable effective harmonic control for power enhancement with a large frequency ratio. The network is synthesized using closed-form equations and is designed with microstrip lines (MLINs) for compact and complete harmonic termination. A GaN HEMT transistor is used, and the prototype is implemented on a Taconic TLY-5 substrate. The measured results closely match the simulations, achieving peak efficiencies at 0.86, 2.34, and 5.65 GHz, with power-added efficiencies (PAEs) of 77.2%, 70.2%, and 61.7% and output powers of 40.8, 39.8, and 39.3 dBm along with the gains of 13.8, 10.8, and 9.3 dB, respectively. These results demonstrate the proposed PA’s suitability for WPT as well as other multiband RF applications requiring compact and efficient transmitters.
{"title":"Design of a High-Efficiency Triple-Band Power Amplifier With Large Frequency Ratio Based on Class C−1/F Harmonic Termination Techniques","authors":"Kyusik Woo;Gia Thang Bui;Chulhun Seo","doi":"10.1109/LMWT.2025.3615134","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3615134","url":null,"abstract":"This letter presents a compact and high-efficiency triple-band (TB) power amplifier (PA) for wireless power transfer (WPT) applications. The proposed PA employs a dual-class harmonic control network (DHCN), based on inverse Class-C (CI) and Class-F operation, to enable effective harmonic control for power enhancement with a large frequency ratio. The network is synthesized using closed-form equations and is designed with microstrip lines (MLINs) for compact and complete harmonic termination. A GaN HEMT transistor is used, and the prototype is implemented on a Taconic TLY-5 substrate. The measured results closely match the simulations, achieving peak efficiencies at 0.86, 2.34, and 5.65 GHz, with power-added efficiencies (PAEs) of 77.2%, 70.2%, and 61.7% and output powers of 40.8, 39.8, and 39.3 dBm along with the gains of 13.8, 10.8, and 9.3 dB, respectively. These results demonstrate the proposed PA’s suitability for WPT as well as other multiband RF applications requiring compact and efficient transmitters.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"95-98"},"PeriodicalIF":3.4,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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