In this letter, a broadband filtering power divider (FPD) based on a quarter circular/cambered substrate integrated waveguide (QCCSIW) cavity and microstrip line (MSL) resonators is proposed. First, a second-order bandpass filter (BPF) is designed based on the arc-shaped coupling of the QCCSIW. Second, a pair of quarter-wavelength ( $lambda $ /4) MSL resonators are integrated into the QCCSIW cavity to form a fourth-order asymmetric BPF with a pair of transmission zeros (TZs). Finally, a hybrid QCCSIW and MSL FPD with isolation is investigated. For verification, all BPFs and FPD are simulated, fabricated, and measured. The proposed FPD demonstrates a center frequency of 4.99 GHz, a 3-dB fractional bandwidth (FBW) of 37.11% (1.85 GHz), and an insertion loss (IL) of 0.8 dB. The port isolation is greater than 11 dB within the entire passband. Meanwhile, a pair of TZs are generated at 3.62 and 6.35 GHz respectively. The proposed hybrid QCCSIW and MSL FPD possesses an overall size of $1.73times 1.74~lambda _{g}$ , featuring advantages of broad bandwidth, compact size, and superior selectivity.
{"title":"Broadband Filtering Power Divider Employing Hybrid Quarter Circular/Cambered SIW Cavity and MSL Resonators","authors":"Ke-Long Sheng;Xiang Wang;Song-Song Qian;Boyu Sima;Zhi-Yuan Zong;Wen Wu","doi":"10.1109/LMWT.2024.3462936","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462936","url":null,"abstract":"In this letter, a broadband filtering power divider (FPD) based on a quarter circular/cambered substrate integrated waveguide (QCCSIW) cavity and microstrip line (MSL) resonators is proposed. First, a second-order bandpass filter (BPF) is designed based on the arc-shaped coupling of the QCCSIW. Second, a pair of quarter-wavelength (\u0000<inline-formula> <tex-math>$lambda $ </tex-math></inline-formula>\u0000/4) MSL resonators are integrated into the QCCSIW cavity to form a fourth-order asymmetric BPF with a pair of transmission zeros (TZs). Finally, a hybrid QCCSIW and MSL FPD with isolation is investigated. For verification, all BPFs and FPD are simulated, fabricated, and measured. The proposed FPD demonstrates a center frequency of 4.99 GHz, a 3-dB fractional bandwidth (FBW) of 37.11% (1.85 GHz), and an insertion loss (IL) of 0.8 dB. The port isolation is greater than 11 dB within the entire passband. Meanwhile, a pair of TZs are generated at 3.62 and 6.35 GHz respectively. The proposed hybrid QCCSIW and MSL FPD possesses an overall size of \u0000<inline-formula> <tex-math>$1.73times 1.74~lambda _{g}$ </tex-math></inline-formula>\u0000, featuring advantages of broad bandwidth, compact size, and superior selectivity.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1247-1250"},"PeriodicalIF":0.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.
{"title":"Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking","authors":"E. Mutlu;C. Preuss;F. Vogelsang;R. Kress;J. Bott;B. Sievert;J. Watermann;J. Abts;A. Rennings;D. Erni;N. Pohl;N. Weimann","doi":"10.1109/LMWT.2024.3458196","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3458196","url":null,"abstract":"This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1278-1281"},"PeriodicalIF":0.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10699472","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-30DOI: 10.1109/LMWT.2024.3457316
Sungwon Kwon;Byung-Wook Min
This letter presents a low-loss 360° bidirectional variable gain phase shifter that achieves vector-sum phase shifting without I/Q signal attenuation. The proposed phase shifter exhibits lower insertion loss than conventional designs through a directional rat-race coupler (RRC)-based asymmetric power dividing. Using transistor switches for phase states and double-pole double-throw switches (DPDTs) for variable gain, all the phase-shifted and variable gain states are achieved through separated phase and gain control without calibration. This reduces chip size and simplifies calibration and beamforming by replacing separate phase shifters and attenuators in the transmit (TX) and receive (RX) channels. The proposed phase shifter is fabricated using 28-nm bulk CMOS technology and has a size of 0.16 mm2 excluding pads. At 94 GHz, the root mean square (rms) phase error is 2.5°, rms gain error is 0.5 dB, and measured insertion loss is $13.2~pm ~0.7$ dB without dc power consumption.
{"title":"A W-Band Bidirectional Vector Switching Phase Shifter Using a Directional Rat-Race Coupler","authors":"Sungwon Kwon;Byung-Wook Min","doi":"10.1109/LMWT.2024.3457316","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3457316","url":null,"abstract":"This letter presents a low-loss 360° bidirectional variable gain phase shifter that achieves vector-sum phase shifting without I/Q signal attenuation. The proposed phase shifter exhibits lower insertion loss than conventional designs through a directional rat-race coupler (RRC)-based asymmetric power dividing. Using transistor switches for phase states and double-pole double-throw switches (DPDTs) for variable gain, all the phase-shifted and variable gain states are achieved through separated phase and gain control without calibration. This reduces chip size and simplifies calibration and beamforming by replacing separate phase shifters and attenuators in the transmit (TX) and receive (RX) channels. The proposed phase shifter is fabricated using 28-nm bulk CMOS technology and has a size of 0.16 mm2 excluding pads. At 94 GHz, the root mean square (rms) phase error is 2.5°, rms gain error is 0.5 dB, and measured insertion loss is \u0000<inline-formula> <tex-math>$13.2~pm ~0.7$ </tex-math></inline-formula>\u0000 dB without dc power consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1255-1258"},"PeriodicalIF":0.0,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-26DOI: 10.1109/LMWT.2024.3454245
Qinghua Wang;Mei Yang;Qian Chen;Lixia Yang;Yingsong Li;Xiaolin Zhang;Wenquan Che
This work presents a compact dual-band rectifier using heterofrequency independent matching technology (HIMT) to achieve high conversion efficiency for the application of and wireless power transmission (WPT) systems. The dual-band impedance matching network (IMN) is composed of an L-type matching network and a heterofrequency independent matching network (HIMN). Specifically, the L-type matching network is applied for the fundamental single-band matching and HIMN is applied for the other band matching by employing a series half-wavelength transmission line and a short-ended quarter-wavelength transmission line, which behave as a bandpass structure and is completely independent on the fundamental band matching. In this way, the dual-band rectifier can achieve high efficiency in both two bands and compact size with reduced design difficulty. Theoretical analysis of the dual-band rectifier using HIMN is carried out. For demonstration, a prototype of the dual-band rectifier with a compact size of $17.5 times 15$ mm2 is fabricated and measured. The measured results show that the maximum conversion efficiency can maintain 72.8% and 69.0% at 2.45 and 5.6 GHz, respectively, with 10.5 dBm input power.
{"title":"A Compact Dual-Band Rectifier Using Heterofrequency Independent Matching Technology","authors":"Qinghua Wang;Mei Yang;Qian Chen;Lixia Yang;Yingsong Li;Xiaolin Zhang;Wenquan Che","doi":"10.1109/LMWT.2024.3454245","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3454245","url":null,"abstract":"This work presents a compact dual-band rectifier using heterofrequency independent matching technology (HIMT) to achieve high conversion efficiency for the application of and wireless power transmission (WPT) systems. The dual-band impedance matching network (IMN) is composed of an L-type matching network and a heterofrequency independent matching network (HIMN). Specifically, the L-type matching network is applied for the fundamental single-band matching and HIMN is applied for the other band matching by employing a series half-wavelength transmission line and a short-ended quarter-wavelength transmission line, which behave as a bandpass structure and is completely independent on the fundamental band matching. In this way, the dual-band rectifier can achieve high efficiency in both two bands and compact size with reduced design difficulty. Theoretical analysis of the dual-band rectifier using HIMN is carried out. For demonstration, a prototype of the dual-band rectifier with a compact size of \u0000<inline-formula> <tex-math>$17.5 times 15$ </tex-math></inline-formula>\u0000 mm2 is fabricated and measured. The measured results show that the maximum conversion efficiency can maintain 72.8% and 69.0% at 2.45 and 5.6 GHz, respectively, with 10.5 dBm input power.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1286-1289"},"PeriodicalIF":0.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-26DOI: 10.1109/LMWT.2024.3460168
Antonio Morini;Tullio Rozzi;Marco Farina;Piero Angeletti
The analytical expression of the scattering matrix of a lossless, reciprocal three-port junction is derived using three arbitrary real angles. This derivation extends a previously proposed method that was limited to cases with a plane of symmetry. The derived formulas are validated analytically and confirmed through both full-wave analysis of a stripline divider and experimental measurements of a strongly asymmetrical and a quasi-symmetrical waveguide divider.
{"title":"Scattering Matrix of a Reciprocal and Lossless, Three-Port Power Divider","authors":"Antonio Morini;Tullio Rozzi;Marco Farina;Piero Angeletti","doi":"10.1109/LMWT.2024.3460168","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3460168","url":null,"abstract":"The analytical expression of the scattering matrix of a lossless, reciprocal three-port junction is derived using three arbitrary real angles. This derivation extends a previously proposed method that was limited to cases with a plane of symmetry. The derived formulas are validated analytically and confirmed through both full-wave analysis of a stripline divider and experimental measurements of a strongly asymmetrical and a quasi-symmetrical waveguide divider.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1223-1226"},"PeriodicalIF":0.0,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10696936","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter proposes a sensor based on a modified hybridized spoof localized surface plasmons (SLSPs) structure, which consists of two concentric overlapped SLSP resonators. The degree of overlap between two structures is adjusted to control the resonance effect. Through the design of overlapped SLSP structure, the coupling is enhanced, thereby reducing the resonance frequency. The proposed sensor exhibits a high-quality factor and high sensitivity. A prototype of the sensor is fabricated and tested, and the experimental results demonstrate that the proposed sensor has a promising potential for lubricating oil quality monitoring.
{"title":"Microwave Microfluidic Sensor Based on Spoof Localized Surface Plasmons for Monitoring Lubricating Oil Quality","authors":"Jian-Hong Fu;Wen-Jing Wu;Qi Qiang Liu;Wen-Sheng Zhao","doi":"10.1109/LMWT.2024.3462764","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462764","url":null,"abstract":"This letter proposes a sensor based on a modified hybridized spoof localized surface plasmons (SLSPs) structure, which consists of two concentric overlapped SLSP resonators. The degree of overlap between two structures is adjusted to control the resonance effect. Through the design of overlapped SLSP structure, the coupling is enhanced, thereby reducing the resonance frequency. The proposed sensor exhibits a high-quality factor and high sensitivity. A prototype of the sensor is fabricated and tested, and the experimental results demonstrate that the proposed sensor has a promising potential for lubricating oil quality monitoring.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1305-1308"},"PeriodicalIF":0.0,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/LMWT.2024.3462677
Yi-Fan Tsao;Arpan Desai;Heng-Tung Hsu
RF switch is an essential component for phased-array antennas in modern communication systems. The series-shunt configuration is preferable due to the balanced performance of high isolation and power handling capability. Conventionally, such configuration suffered from phase fluctuations over the input power drive making extra phase compensation necessary for proper system operation. Theoretical analysis by an equivalent circuit model revealed that the phase fluctuation was primarily caused by the capacitance of the devices in the series arm. We thus proposed a design using the single-pole-double-throw (SPDT) configuration as an example featuring minimum phase variation over a very wide RF input power range. Compared to the conventional one, the proposed design achieved at least a reduction of over 10° at 28 GHz in phase variation over a wide input power range up to the input 1-dB compression point ( $P_{1,text {dB}}$ ). To our knowledge, this is the first series-shunt type SPDT switch study achieving the minimum phase variation over wide input power levels.
{"title":"An SPDT Switch Design Featuring Minimum Phase Distortion Over Wide Input Power Drive for Phased-Array Antenna System Applications","authors":"Yi-Fan Tsao;Arpan Desai;Heng-Tung Hsu","doi":"10.1109/LMWT.2024.3462677","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462677","url":null,"abstract":"RF switch is an essential component for phased-array antennas in modern communication systems. The series-shunt configuration is preferable due to the balanced performance of high isolation and power handling capability. Conventionally, such configuration suffered from phase fluctuations over the input power drive making extra phase compensation necessary for proper system operation. Theoretical analysis by an equivalent circuit model revealed that the phase fluctuation was primarily caused by the capacitance of the devices in the series arm. We thus proposed a design using the single-pole-double-throw (SPDT) configuration as an example featuring minimum phase variation over a very wide RF input power range. Compared to the conventional one, the proposed design achieved at least a reduction of over 10° at 28 GHz in phase variation over a wide input power range up to the input 1-dB compression point (\u0000<inline-formula> <tex-math>$P_{1,text {dB}}$ </tex-math></inline-formula>\u0000). To our knowledge, this is the first series-shunt type SPDT switch study achieving the minimum phase variation over wide input power levels.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1251-1254"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/LMWT.2024.3459030
Yan Zheng;Hanyu Tian;Yuandan Dong
In this letter, lumped-element GaAs integrated passive device (IPD) bandpass filters (BPFs) with controllable transmission zeros (TZs) and bandwidths are proposed. The mixed-electromagnetic couplings of a second-order distributed-element resonator and its various transmission responses are analyzed. Two equivalent lumped-element BPF units under different coupling conditions are investigated. To validate the feasibility of this design approach, two 5G N77-band fourth-order BPFs based on the two BPF units are designed and verified. These two BPFs show the superior advantages of small size, low insertion loss, deep rejection, and wide stopband.
{"title":"Design of Miniaturized and Highly Selective On-Chip BPFs With Mixed-Coupled Resonators","authors":"Yan Zheng;Hanyu Tian;Yuandan Dong","doi":"10.1109/LMWT.2024.3459030","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3459030","url":null,"abstract":"In this letter, lumped-element GaAs integrated passive device (IPD) bandpass filters (BPFs) with controllable transmission zeros (TZs) and bandwidths are proposed. The mixed-electromagnetic couplings of a second-order distributed-element resonator and its various transmission responses are analyzed. Two equivalent lumped-element BPF units under different coupling conditions are investigated. To validate the feasibility of this design approach, two 5G N77-band fourth-order BPFs based on the two BPF units are designed and verified. These two BPFs show the superior advantages of small size, low insertion loss, deep rejection, and wide stopband.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1235-1238"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a dual-band substrate integrated waveguide (SIW) filter based on the dual modes of TE101 and TE102 in multilayer structures. Its middle metal layers feature mixed-coupling structures, where the slots implement independent magnetic coupling for the TE101 and TE102 bands, and the holes implement additional electric coupling for the TE101 band. It can independently control the dual bands and their transmission zeros (TZs), allowing for flexible design and controllable selectivity. A prototype is provided with independent dual bands and controllable TZs located between them. The proposed technique should be effective for developing high-performance dual-band SIW filters in microwave and wireless circuits and systems.
{"title":"Dual Band Dual Mode Substrate Integrated Waveguide Filter With Mixed Coupling","authors":"Peng Chu;Mengjie Luo;Wenyu Zhang;Fang Zhu;Leilei Liu;Ke Wu","doi":"10.1109/LMWT.2024.3462729","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462729","url":null,"abstract":"This letter presents a dual-band substrate integrated waveguide (SIW) filter based on the dual modes of TE101 and TE102 in multilayer structures. Its middle metal layers feature mixed-coupling structures, where the slots implement independent magnetic coupling for the TE101 and TE102 bands, and the holes implement additional electric coupling for the TE101 band. It can independently control the dual bands and their transmission zeros (TZs), allowing for flexible design and controllable selectivity. A prototype is provided with independent dual bands and controllable TZs located between them. The proposed technique should be effective for developing high-performance dual-band SIW filters in microwave and wireless circuits and systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1239-1242"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The resonant structure of microwave microfluidic sensors is crucial to their performance. However, traditional manual design methods rely heavily on expert experience and extensive parameter tuning, making it difficult to achieve optimal performance. Thus, there is an urgent need for an automatic design method for resonant structures. This letter proposes a topology optimization method based on deep reinforcement learning (DRL) to optimize the resonant cavity structure within the sensor. The optimization algorithm uses a reward strategy to obtain the optimal structure, increasing the relative frequency shift of the sensor from 0.4 to 0.658, thereby enhancing sensitivity by 64.5%. Experimental results demonstrate that this method can effectively improve the sensitivity of microwave microfluidic sensors and exhibit robustness and versatility.
{"title":"Deep Reinforcement Learning Based Optimization of Microwave Microfluidic Sensor","authors":"Jia-Hao Pan;Wen-Jing Wu;Qi Qiang Liu;Wen-Sheng Zhao;Da-Wei Wang;Xiaoping Hu;Yue Hu;Jing Wang;Jun Liu;Lingling Sun","doi":"10.1109/LMWT.2024.3462767","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462767","url":null,"abstract":"The resonant structure of microwave microfluidic sensors is crucial to their performance. However, traditional manual design methods rely heavily on expert experience and extensive parameter tuning, making it difficult to achieve optimal performance. Thus, there is an urgent need for an automatic design method for resonant structures. This letter proposes a topology optimization method based on deep reinforcement learning (DRL) to optimize the resonant cavity structure within the sensor. The optimization algorithm uses a reward strategy to obtain the optimal structure, increasing the relative frequency shift of the sensor from 0.4 to 0.658, thereby enhancing sensitivity by 64.5%. Experimental results demonstrate that this method can effectively improve the sensitivity of microwave microfluidic sensors and exhibit robustness and versatility.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1309-1312"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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