In this work, we show how localized, small-scale, and targeted heating can be induced in a microwave reaction cavity (MRC) by enhancing the electric field through the split-ring resonator (SRR) at the gap. During excitation of the cavity, an intense electric field is generated in the gap of the SRR, which heats a $4times 4$ mm hotspot on the sample small enough to realize targeted microwave heating. To validate the results, the experimental system is built, and the corresponding experiments are performed, achieving excellent agreement between simulations and measurements. In addition, the relationship between the temperature of the hot spot and the intensity of the electromagnetic field component at the SRR gap is investigated. Finally, the SRR is moved across the cavity and spatially targeted microwave heating is achieved.
{"title":"Targeted Microwave Heating Induced by Split-Ring Resonator","authors":"Junwei Wang;Bin Yao;Rui Gong;Qinhong Zheng;Yingkai Liu;Runeng Zhong;Tai Xiang","doi":"10.1109/LMWT.2024.3462711","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462711","url":null,"abstract":"In this work, we show how localized, small-scale, and targeted heating can be induced in a microwave reaction cavity (MRC) by enhancing the electric field through the split-ring resonator (SRR) at the gap. During excitation of the cavity, an intense electric field is generated in the gap of the SRR, which heats a \u0000<inline-formula> <tex-math>$4times 4$ </tex-math></inline-formula>\u0000 mm hotspot on the sample small enough to realize targeted microwave heating. To validate the results, the experimental system is built, and the corresponding experiments are performed, achieving excellent agreement between simulations and measurements. In addition, the relationship between the temperature of the hot spot and the intensity of the electromagnetic field component at the SRR gap is investigated. Finally, the SRR is moved across the cavity and spatially targeted microwave heating is achieved.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1301-1304"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-24DOI: 10.1109/LMWT.2024.3461799
Willy Jordan;Adel Barakat;Babita Gyawali;Ramesh K. Pokharel
This letter introduces a novel approach to achieve high efficiency in high-power rectification using 180-nm complementary metal-oxide–semiconductor (CMOS) technology. The proposed rectifier targets the utilization of electromagnetic waves within the platinum band, operating within the frequency range of 0.6–0.9 GHz. Unlike conventional body-biasing techniques using pMOS transistors, where the output terminal is used for biasing, the proposed method employs biasing through the drain voltage of respective transistor. This approach results in higher output voltage for increased input power. Measurement results demonstrate outstanding power conversion efficiency (PCE) exceeding 60% and an output voltage surpassing 9 V across the 0.6–0.9 GHz range at 16-dBm input power ( ${P}_{text {in}}$ ). Furthermore, the peak PCE of 67.5% was achieved at a carrier frequency of 0.7 GHz.
{"title":"High-Efficiency Platinum-Band CMOS Rectifier Using Modified Body-Biasing Technique","authors":"Willy Jordan;Adel Barakat;Babita Gyawali;Ramesh K. Pokharel","doi":"10.1109/LMWT.2024.3461799","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3461799","url":null,"abstract":"This letter introduces a novel approach to achieve high efficiency in high-power rectification using 180-nm complementary metal-oxide–semiconductor (CMOS) technology. The proposed rectifier targets the utilization of electromagnetic waves within the platinum band, operating within the frequency range of 0.6–0.9 GHz. Unlike conventional body-biasing techniques using pMOS transistors, where the output terminal is used for biasing, the proposed method employs biasing through the drain voltage of respective transistor. This approach results in higher output voltage for increased input power. Measurement results demonstrate outstanding power conversion efficiency (PCE) exceeding 60% and an output voltage surpassing 9 V across the 0.6–0.9 GHz range at 16-dBm input power (\u0000<inline-formula> <tex-math>${P}_{text {in}}$ </tex-math></inline-formula>\u0000). Furthermore, the peak PCE of 67.5% was achieved at a carrier frequency of 0.7 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1290-1292"},"PeriodicalIF":0.0,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-20DOI: 10.1109/LMWT.2024.3454695
Yunsheng Huo;Fa Foster Dai
This letter presents an inductorless compact 12-phase integer-N phase-locked-loop (PLL) with time-amplifying phase-frequency detector (TAPFD) to achieve low in-band phase noise. A time amplifier with automatic gain control is proposed to provide a wide detectable range during acquisition and a high gain at lock condition. The charge-pump gain is also adaptively tuned to ensure that the overall loop gain is constant for robust operation. The PLL includes a 12-phase inverter-based coupled ring oscillator. Instead of placing all the delay cells in one ring, the multiple phase outputs are achieved by capacitive coupling of two identical ring oscillators. The proposed double-ring coupled ring oscillator provides additional output phases without scarifying the output frequency and phase noise. The inductorless PLL is implemented in 22-nm FDX CMOS technology with a core area of 0.0253 mm2 and achieves up to 23-dB in-band phase noise improvement to −113.1 dBc/Hz and a measured integrated jitter of 1.274 ps at 2.4 GHz. The 12-phase ring PLL consumes 8.18 mW from a 0.8-V power supply and achieves a measured PLL FoM of 229 dB.
{"title":"A 2.4-GHz Multiphase Inductorless PLL With Coupled-Ring Oscillators and Time-Amplifying Phase-Frequency Detector for Low Phase Noise and Robust Locking Performances","authors":"Yunsheng Huo;Fa Foster Dai","doi":"10.1109/LMWT.2024.3454695","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3454695","url":null,"abstract":"This letter presents an inductorless compact 12-phase integer-N phase-locked-loop (PLL) with time-amplifying phase-frequency detector (TAPFD) to achieve low in-band phase noise. A time amplifier with automatic gain control is proposed to provide a wide detectable range during acquisition and a high gain at lock condition. The charge-pump gain is also adaptively tuned to ensure that the overall loop gain is constant for robust operation. The PLL includes a 12-phase inverter-based coupled ring oscillator. Instead of placing all the delay cells in one ring, the multiple phase outputs are achieved by capacitive coupling of two identical ring oscillators. The proposed double-ring coupled ring oscillator provides additional output phases without scarifying the output frequency and phase noise. The inductorless PLL is implemented in 22-nm FDX CMOS technology with a core area of 0.0253 mm2 and achieves up to 23-dB in-band phase noise improvement to −113.1 dBc/Hz and a measured integrated jitter of 1.274 ps at 2.4 GHz. The 12-phase ring PLL consumes 8.18 mW from a 0.8-V power supply and achieves a measured PLL FoM of 229 dB.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1275-1277"},"PeriodicalIF":0.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-20DOI: 10.1109/LMWT.2024.3458179
Chao Fan;Ya Zhao;Ge Gao;Li Geng
This letter reports a single-transformer quad-mode voltage-controlled oscillator (VCO) in 28-nm CMOS. Specially, our quad-mode VCO integrates the mode-switching, core-switching, and inductor-switching approaches in a single-transformer-based resonator for frequency tuning range (FTR) extension. Thus, the wideband oscillator could mitigate the tradeoff between the phase noise (PN) and octave FTR while preserving the silicon area efficiency. The proposed quad-mode VCO scores a PN of −136.6 dBc/Hz with a superior peak FoMT of 202.5 dBc/Hz at a 10-MHz offset over a 100% FTR (4.5–13.5 GHz). The VCO occupies a core area of 0.12 mm2 and dissipates 4.5–11.5 mW across the FTR.
{"title":"A 4.5-to-13.5-GHz Single-Transformer Quad-Mode VCO With 202.5-dBc/Hz FoMT","authors":"Chao Fan;Ya Zhao;Ge Gao;Li Geng","doi":"10.1109/LMWT.2024.3458179","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3458179","url":null,"abstract":"This letter reports a single-transformer quad-mode voltage-controlled oscillator (VCO) in 28-nm CMOS. Specially, our quad-mode VCO integrates the mode-switching, core-switching, and inductor-switching approaches in a single-transformer-based resonator for frequency tuning range (FTR) extension. Thus, the wideband oscillator could mitigate the tradeoff between the phase noise (PN) and octave FTR while preserving the silicon area efficiency. The proposed quad-mode VCO scores a PN of −136.6 dBc/Hz with a superior peak FoMT of 202.5 dBc/Hz at a 10-MHz offset over a 100% FTR (4.5–13.5 GHz). The VCO occupies a core area of 0.12 mm2 and dissipates 4.5–11.5 mW across the FTR.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1271-1274"},"PeriodicalIF":0.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a switchable tri-core voltage-controlled oscillator (VCO) with 130% frequency tuning range (FTR). Utilizing the reconfigurable compensation stubs and reused varactors, three VCO cores are combined to achieve the switchable-free running frequency, while the FTR is greatly enlarged and the phase noise (PN) is almost unaffected.
{"title":"A 130%-Tuning-Range Switchable Tri-Core Voltage-Controlled Oscillator Utilizing Reconfigurable Matching and Phase Compensation","authors":"Qiang Ma;Xiaojun Bi;Andy Shen;Chang Wu;Jielong Liu;Qinfen Xu","doi":"10.1109/LMWT.2024.3455793","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3455793","url":null,"abstract":"This letter presents a switchable tri-core voltage-controlled oscillator (VCO) with 130% frequency tuning range (FTR). Utilizing the reconfigurable compensation stubs and reused varactors, three VCO cores are combined to achieve the switchable-free running frequency, while the FTR is greatly enlarged and the phase noise (PN) is almost unaffected.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1259-1262"},"PeriodicalIF":0.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-20DOI: 10.1109/LMWT.2024.3457965
Alex Pham;Hjalti H. Sigmarsson
An innovative filter design with full independent control of the center frequency, bandwidth, and response ripple is demonstrated utilizing only liquid-metal actuation. This is realized on substrate-integrated waveguide (SIW) technology with tunable evanescent cavity resonators coupled by an adaptable inductive iris design. A novel external coupling mechanism utilizing liquid-metal tuning posts on the filter input/output is presented. The fully reconfigurable filter design has a center frequency tuning range of 4.5–5.6 GHz with bandwidths ranging from 198 to 599 MHz. The response shape is reconfigurable between Butterworth and equi-ripple responses at all frequency and bandwidth states. Agreement between experimental results and simulation validate the effectiveness of this highly reconfigurable filter design and the capabilities of liquid metal for adaptive coupling mechanisms.
{"title":"Full Bandpass Filter Reconfigurability Through Liquid Metal Tuning and a Novel External Coupling Technique","authors":"Alex Pham;Hjalti H. Sigmarsson","doi":"10.1109/LMWT.2024.3457965","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3457965","url":null,"abstract":"An innovative filter design with full independent control of the center frequency, bandwidth, and response ripple is demonstrated utilizing only liquid-metal actuation. This is realized on substrate-integrated waveguide (SIW) technology with tunable evanescent cavity resonators coupled by an adaptable inductive iris design. A novel external coupling mechanism utilizing liquid-metal tuning posts on the filter input/output is presented. The fully reconfigurable filter design has a center frequency tuning range of 4.5–5.6 GHz with bandwidths ranging from 198 to 599 MHz. The response shape is reconfigurable between Butterworth and equi-ripple responses at all frequency and bandwidth states. Agreement between experimental results and simulation validate the effectiveness of this highly reconfigurable filter design and the capabilities of liquid metal for adaptive coupling mechanisms.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1231-1234"},"PeriodicalIF":0.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-18DOI: 10.1109/LMWT.2024.3439715
Y. K. Koh;M. Kim
This article presents a metallic radiator module, $11.5times 5.6times 2.5$ cm3 in size, designed to direct terahertz power with a 26° circularly symmetric radiation beam. The module combines the power from eight identical integrated oscillator chips in free space using a linear array of built-in circular horns with 17-dB gain. The oscillators operating at unlocked frequencies produce an average power of 3.5 dBm within the 268–274 GHz range. When all elements are activated, the radiator module maintains the same radiation patterns as the individual elements, achieving a total radiated power of 12.5 dBm, which represents an eightfold increase from the average power per element.
{"title":"270-GHz Radiator Module for Eight-Way Incoherent Power Combining of InP HBT Oscillators","authors":"Y. K. Koh;M. Kim","doi":"10.1109/LMWT.2024.3439715","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3439715","url":null,"abstract":"This article presents a metallic radiator module, \u0000<inline-formula> <tex-math>$11.5times 5.6times 2.5$ </tex-math></inline-formula>\u0000 cm3 in size, designed to direct terahertz power with a 26° circularly symmetric radiation beam. The module combines the power from eight identical integrated oscillator chips in free space using a linear array of built-in circular horns with 17-dB gain. The oscillators operating at unlocked frequencies produce an average power of 3.5 dBm within the 268–274 GHz range. When all elements are activated, the radiator module maintains the same radiation patterns as the individual elements, achieving a total radiated power of 12.5 dBm, which represents an eightfold increase from the average power per element.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1282-1285"},"PeriodicalIF":0.0,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-16DOI: 10.1109/LMWT.2024.3437422
Jin Cheng;Yunpeng Zhang;Jiawei Long;Chengyong Yu;Chong Gao;Hu Zheng;En Li;Lin Qin;Xiangbao Zhu
In this letter, a novel multichannel-coupled open resonator for terahertz (THz) wider frequency range measurement is proposed. The coupling of the THz open resonator is carried out through the cooperation between the PCB coupling sheet and the pressurized flange. The operating frequency of the resonator is extended through the multichannel coupling technology under one cavity. Moreover, an improved plane mirror with a slit and an inspiratory structure is designed to enhance the stability of measurement in the THz range. The proposed system and method are of great significance for characterizing the dielectric property frequency dependence of materials in the THz range.
{"title":"Measurement of Complex Permittivity in 0.11–0.27 THz With a Novel Multichannel-Coupled Open Resonator","authors":"Jin Cheng;Yunpeng Zhang;Jiawei Long;Chengyong Yu;Chong Gao;Hu Zheng;En Li;Lin Qin;Xiangbao Zhu","doi":"10.1109/LMWT.2024.3437422","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3437422","url":null,"abstract":"In this letter, a novel multichannel-coupled open resonator for terahertz (THz) wider frequency range measurement is proposed. The coupling of the THz open resonator is carried out through the cooperation between the PCB coupling sheet and the pressurized flange. The operating frequency of the resonator is extended through the multichannel coupling technology under one cavity. Moreover, an improved plane mirror with a slit and an inspiratory structure is designed to enhance the stability of measurement in the THz range. The proposed system and method are of great significance for characterizing the dielectric property frequency dependence of materials in the THz range.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1297-1300"},"PeriodicalIF":0.0,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-10DOI: 10.1109/LMWT.2024.3452491
Vesa Lampu;Lauri Anttila;Matias Turunen;Mikko Valkama
In this letter, we propose a novel self-interference (SI) cancellation solution for asymmetric in-band full-duplex (IBFD) systems, where the downlink (DL) signals are noncontiguously aggregated within the available band. The method builds on a Hammerstein model with parallel spline-interpolated 2-D lookup tables (LUTs), together with efficient gradient-descent parameter learning rules. The provided RF measurement results harnessing a GaN Doherty power amplifier (PA) at 3.5 GHz demonstrate digital SI cancellation levels up to 35 dB, with substantially reduced processing complexity compared with the reference polynomial model. These methods and results pave the way toward enhanced duplexing capabilities and flexibility in the emerging 6G era.
在这封信中，我们为非对称带内全双工（IBFD）系统提出了一种新的自干扰（SI）消除解决方案，在这种系统中，下行链路（DL）信号在可用频带内非连续聚合。该方法基于哈默斯坦模型和并行拼接插值的二维查找表（LUT），以及高效的梯度-后裔参数学习规则。利用 GaN Doherty 功率放大器 (PA) 在 3.5 GHz 频率下进行的射频测量结果表明，数字 SI 消除水平高达 35 dB，与参考多项式模型相比，处理复杂度大大降低。这些方法和结果为在新兴的 6G 时代增强双工能力和灵活性铺平了道路。
{"title":"Gradient-Adaptive 2-D LUT Method for 6G Flexible-Duplex","authors":"Vesa Lampu;Lauri Anttila;Matias Turunen;Mikko Valkama","doi":"10.1109/LMWT.2024.3452491","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3452491","url":null,"abstract":"In this letter, we propose a novel self-interference (SI) cancellation solution for asymmetric in-band full-duplex (IBFD) systems, where the downlink (DL) signals are noncontiguously aggregated within the available band. The method builds on a Hammerstein model with parallel spline-interpolated 2-D lookup tables (LUTs), together with efficient gradient-descent parameter learning rules. The provided RF measurement results harnessing a GaN Doherty power amplifier (PA) at 3.5 GHz demonstrate digital SI cancellation levels up to 35 dB, with substantially reduced processing complexity compared with the reference polynomial model. These methods and results pave the way toward enhanced duplexing capabilities and flexibility in the emerging 6G era.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1293-1296"},"PeriodicalIF":0.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10670562","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A quadrature voltage-controlled oscillator (QVCO) utilizing the enhanced wideband-harmonic-shaping technique to improve phase noise (PN) and reduce the 1/ ${f} ^{3}$ PN corner is presented. Specifically, our QVCO uses triple-coil magnetic coupling for quadrature phase generation, additionally boosts the common-mode (CM) impedance and harmonic voltage, and contributes to a well-defined CM current returning path for PN improvement and flicker noise upconversion reduction. Besides, the head resonator (HR) enables wideband-harmonic-shaping operation and facilitates without manual second harmonic alignment. The QVCO is implemented in 55-nm CMOS and occupies a core area of 0.362 mm2. The measured peak PN is −124.2 dBc/Hz at 1-MHz offset, and the estimated 1/ ${f} ^{3}$ PN corner varies from 63 to 89 kHz across the entire operating range of 17% (4.14–4.97 GHz).
{"title":"A 63–89-kHz 1/f³ Phase Noise Corner QVCO Using Enhanced Wideband-Harmonic-Shaping Technique","authors":"Zhan Qu;Ya Zhao;Ge Gao;Chao Fan;Feng Liang;Li Geng","doi":"10.1109/LMWT.2024.3436868","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3436868","url":null,"abstract":"A quadrature voltage-controlled oscillator (QVCO) utilizing the enhanced wideband-harmonic-shaping technique to improve phase noise (PN) and reduce the 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN corner is presented. Specifically, our QVCO uses triple-coil magnetic coupling for quadrature phase generation, additionally boosts the common-mode (CM) impedance and harmonic voltage, and contributes to a well-defined CM current returning path for PN improvement and flicker noise upconversion reduction. Besides, the head resonator (HR) enables wideband-harmonic-shaping operation and facilitates without manual second harmonic alignment. The QVCO is implemented in 55-nm CMOS and occupies a core area of 0.362 mm2. The measured peak PN is −124.2 dBc/Hz at 1-MHz offset, and the estimated 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN corner varies from 63 to 89 kHz across the entire operating range of 17% (4.14–4.97 GHz).","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1263-1266"},"PeriodicalIF":0.0,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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