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Ultra-Wideband Millimeter-Wave Tight and Loose Microstrip Aperture Couplers 超宽带毫米波紧松微带孔径耦合器
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-05 DOI: 10.1109/LMWT.2024.3435756
Mostafa O. Shady;Mohamed Mamdouh M. Ali;Ahmed A. Kishk
Compact multiaperture couplers for ultra-wideband millimeter-wave (mmWave) operation are presented, employing an artificial magnetic conductor (AMC) for radiation-free performance. Elliptical coupling apertures are used to enable efficient operation across a 50% bandwidth, while fixed elliptical matching patches are employed for any coupling level to achieve matching levels exceeding −19 dB. Minimal phase and amplitude variation are achieved over 15 dB directivity within coupling ranges from 3 to 20 dB. Validation through fabrication and testing of two packaged lines with different aperture configurations confirms practicality and efficiency.
本文介绍了用于超宽带毫米波(mmWave)工作的紧凑型多孔径耦合器,该耦合器采用人工磁导体(AMC),具有无辐射性能。椭圆形耦合孔径可在 50% 的带宽范围内实现高效运行,而固定椭圆形匹配贴片可用于任何耦合电平,以实现超过 -19 dB 的匹配电平。在 3 至 20 dB 的耦合范围内,15 dB 的指向性可实现最小的相位和振幅变化。通过对两条具有不同孔径配置的封装线路进行制造和测试,验证了其实用性和效率。
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引用次数: 0
Comments on “An Analytic Series Solution for H-Plane Waveguide T-Junction” 关于 "H 平面波导 T 型结的解析序列解 "的评论
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-01 DOI: 10.1109/LMWT.2024.3431446
B. Honarbakhsh
In the above letter, Park and Eom applied a Fourier-transform technique to the analysis of H-plane parallel-plate T-junction. However, the letter has some incomplete relations, and lacking a fundamental theoretical discussion. Moreover, the proposed solution fails to track edge singularities. This comment aims to apply some corrections and demonstrate the deficiency of the proposed solution.
在上述信件中,Park 和 Eom 应用傅立叶变换技术分析了 H 平面平行板 T 型连接。然而,这封信中存在一些不完整的关系,缺乏基本的理论探讨。此外,提出的解决方案未能跟踪边缘奇点。本评论旨在应用一些修正方法,并说明所提方案的不足之处。
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引用次数: 0
A Ka-Band Small-Size Differential Four-Way Wilkinson Power Divider With Multicoupled Inductors 带有多耦合电感器的 Ka 波段小型差分四路威尔金森功率分配器
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-01 DOI: 10.1109/LMWT.2024.3426618
Gyuha Lee;SeongHwan Cho;Songcheol Hong
A compact Ka-band differential four-way Wilkinson power divider (WPD) is presented, in which a $lambda $ /4 differential transmission line (DTL) is implemented with multicoupled inductors (MCIs). The inductors allow the DTL to be small using the mutual inductances and their interwinding capacitances effectively. The divider implemented in a 28-nm RF CMOS process occupies a compact area of 0.07 mm2. It shows low insertion losses of less than 1.31 dB at 24–30 GHz and less than 1.86 dB at 24–40 GHz. The measured isolation between the output ports is higher than 17.2 dB at 24–40 GHz.
本文提出了一种紧凑型 Ka 波段差分四路威尔金森功率分配器(WPD),其中的 $lambda $ /4 差分传输线(DTL)是通过多耦合电感器(MCI)实现的。电感器可有效利用互感及其绕组间电容,将 DTL 变小。该分频器采用 28 纳米射频 CMOS 工艺,占地面积仅为 0.07 平方毫米。它的插入损耗很低,24-30 GHz 时小于 1.31 dB,24-40 GHz 时小于 1.86 dB。在 24-40 GHz 时,输出端口之间的测量隔离度高于 17.2 dB。
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引用次数: 0
On the Search of the Coupling Matrix Synthesis Path Through Matrix Decomposition 论通过矩阵分解寻找耦合矩阵合成路径
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-31 DOI: 10.1109/LMWT.2024.3432666
Lluís Acosta;Ricardo Pampliega;Carlos Caballero;Eloi Guerrero;Jordi Verdú;Pedro de Paco
The synthesis of nonconventional topologies has become the key enabler of next-generation filters. However, the coupling matrix (CM) reconfiguration path of noncanonical forms may become complex and difficult to trace, especially in high-order filters. As a consequence, the synthesis of this kind of networks is usually tackled by means of optimization and numerical interval methods. Although these synthesis methodologies have proven to be effective, for some cases they may take large amounts of time to get to the target topology. This work presents a methodology to extract the reconfiguration path of any target topology once the general transformation matrix is obtained, which is reproducible independently of the transfer function. This enables the option of using the powerful and rapid tool of CM reconfiguration. Moreover, this letter discusses the nonunique solution of a target topology with their reconfiguration path, which is strongly related to the eigenvalues of the network. Two different topologies are used as a vehicle to validate the presented methodology.
非常规拓扑结构的合成已成为下一代滤波器的关键驱动因素。然而,非标准形式的耦合矩阵(CM)重构路径可能会变得复杂且难以追踪,尤其是在高阶滤波器中。因此,这类网络的合成通常采用优化和数值区间法。虽然这些合成方法已被证明是有效的,但在某些情况下,它们可能需要花费大量时间才能达到目标拓扑结构。本研究提出了一种方法,一旦获得通用变换矩阵,就能提取任何目标拓扑结构的重新配置路径,而且这种方法不受传递函数的影响,具有可重复性。这样就可以选择使用 CM 重构这一强大而快速的工具。此外,这封信还讨论了目标拓扑与其重新配置路径的非唯一解,这与网络的特征值密切相关。两种不同的拓扑结构被用作验证所介绍方法的载体。
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引用次数: 0
Modeling of Spectral Regrowth Effects of Passive Intermodulation With Broadband Signal Excitation 宽带信号激励下无源互调的频谱再生效应建模
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-29 DOI: 10.1109/LMWT.2024.3422493
Junyu Luo;Jinchun Gao;Weiling Zhuang;Ziren Wang
In this letter, a novel broadband passive intermodulation (PIM) model was developed to evaluate the spectral regrowth around PIM signals. This proposed model adopts the frequency division method to divide the PIM products and introduces the modified Gaussian distribution to fit the probability density function (pdf) of the PIM spectrum. Compared with the power division model, the proposed frequency division model can achieve accurate spectral regrowth estimation in a selected channel. Finally, an example of a coaxial connector was selected and a series of broadband PIM tests were conducted to verify the effectiveness of the model.
在这封信中,我们开发了一种新型宽带无源互调(PIM)模型,用于评估 PIM 信号周围的频谱再生。该模型采用分频方法划分 PIM 产物,并引入修正高斯分布来拟合 PIM 频谱的概率密度函数(pdf)。与功率划分模型相比,所提出的频率划分模型可以在选定信道中实现精确的频谱再生估计。最后,以同轴连接器为例,进行了一系列宽带 PIM 测试,以验证模型的有效性。
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引用次数: 0
New Outphasing Amplifier Mixed-Mode Modulation Approach for Improving Efficiency and Gain 提高效率和增益的新型外相放大器混合模式调制方法
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-29 DOI: 10.1109/LMWT.2024.3428837
Weiwei Wang;Shichang Chen;Yixi Tang;Jialin Cai;Giovanni Crupi;Quan Xue
This letter introduces a novel input excitation approach designed to enhance output back-off (OBO) efficiency and gain by incorporating both amplitude and phase modulations for an outphasing power amplifier (OPA). For the first time, a comprehensive mixed-mode modulation approach is presented. To validate the proposed method, a prototype OPA operating at 2.6 GHz is designed as the testing benchmark. Experimental results confirm that the power added efficiency (PAE) at 9 dB OBO point reaches 72.56% under the proposed modulation, achieving an 18.76% improvement over the classic modulation. The gain remains relatively stable, ranging from 10.7 to 12.1 dB across a large OBO range.
这篇文章介绍了一种新颖的输入激励方法,旨在通过将振幅和相位调制结合到外相位功率放大器(OPA)中,提高输出背离(OBO)效率和增益。本文首次提出了一种全面的混合模式调制方法。为了验证所提出的方法,设计了一个工作频率为 2.6 GHz 的原型 OPA 作为测试基准。实验结果证实,在拟议的调制方式下,9 dB OBO 点的功率附加效率(PAE)达到 72.56%,比传统调制方式提高了 18.76%。增益保持相对稳定,在较大的 OBO 范围内为 10.7 至 12.1 dB。
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引用次数: 0
A Quasi-Box-Like Dielectric Filter Sharing a Cavity With Wide Stopband 共享腔体的宽截止带准盒状介质滤波器
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-29 DOI: 10.1109/LMWT.2024.3427336
Yuchen Yin;Tianle Zhou;Ya Xie;Wei Shen;Qi Zhang;Xiaobei Zhang
A dielectric filter using a shared cavity with a quasi-box-like topology is proposed. In the shared cavity, four TE101 mode resonators with a dispersive coupling are cascaded to obtain a quasi-ellipse response. A coupling iris is employed to isolate cross coupling and provide source-load coupling based on the absorption effect of dispersive coupling on cross coupling while not on source-load coupling. This design offers a controllable transmission zero (TZ) which extends the stopband up to $1.85~f_{mathbf {0}}$ with rejection greater than -20 dB. A design example is fabricated and measured. The simulated and the measured results show good consistency for validating the wide out-of-band suppression characteristics of the proposed filter.
本文提出了一种采用准盒式拓扑结构的共享腔体的介质滤波器。在共享空腔中,四个具有色散耦合的 TE101 模式谐振器被级联以获得准椭圆响应。耦合光圈用于隔离交叉耦合,并根据色散耦合对交叉耦合的吸收效应提供源负载耦合,而对源负载耦合则没有吸收效应。这种设计提供了一个可控的传输零点(TZ),将阻带扩展到 1.85~f_{mathbf {0}}$,抑制大于 -20 dB。我们制作并测量了一个设计实例。模拟和测量结果显示出良好的一致性,验证了拟议滤波器的宽带外抑制特性。
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引用次数: 0
High Selectivity Wideband Superconducting Filter Design Based on Feed Line Resonator (FLR) Method 基于馈线谐振器 (FLR) 方法的高选择性宽带超导滤波器设计
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-24 DOI: 10.1109/LMWT.2024.3415074
Xilong Lu;Xueyang Fang;Guangsong Wei;Shigang Zhou;Li Sun;Xudong Bai;Bokai Weng;Yanhong Gao;Dongbo Chen
This letter presents the new concept and method of feed line resonator (FLR). Unlike the conventional filter feed lines, which serve solely for external coupling, the proposed feed line resonators can not only introduce additional transmission poles within the passband, but also generate transmission zeros at both sides of the passband, thereby significantly augmenting the filter’s performance without enlarging its physical dimensions. A novel and systematic method for constructing multimode resonators, called the connected line resonator (CLR) method has been proposed, two parallel lines are connected to obtain three resonant modes for filter design. The key advantage of this proposed CLR is its ability to exhibit a substantial attenuation slope at the higher band edge. To demonstrate the FLR and CLR method, two wideband filters were designed based on the high-temperature superconducting film, with the center frequency at 7.3 GHz, and the fractional bandwidth of about 59%. The measured results agree well with the simulation ones.
本文介绍了馈线谐振器(FLR)的新概念和新方法。与仅用于外部耦合的传统滤波器馈电线不同,所提出的馈电线谐振器不仅能在通带内引入额外的传输极点,还能在通带两侧产生传输零点,从而在不扩大物理尺寸的情况下显著提高滤波器的性能。有人提出了一种新颖、系统的多模谐振器构造方法,即连接线谐振器(CLR)方法,通过连接两条平行线来获得三个谐振模式,从而实现滤波器的设计。这种连接线谐振器的主要优点是能在较高的频带边缘表现出很大的衰减斜率。为了演示 FLR 和 CLR 方法,我们设计了两个基于高温超导薄膜的宽带滤波器,其中心频率为 7.3 GHz,分数带宽约为 59%。测量结果与模拟结果非常吻合。
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引用次数: 0
Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs ISV 和 OSV GaN HEMT 的可扩展性研究与建模
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-18 DOI: 10.1109/LMWT.2024.3426087
Haorui Luo;Jiaxin Zheng;Yongxin Guo
Internal source via (ISV) and outside source via (OSV) are two common structures of GaN HEMTs. This letter investigates and models the scalability differences in ISV and OSV gallium nitride high electron mobility transistors (GaN HEMTs). This letter provides detailed model parameters for ISV and OSV devices. Based on the extractions, the different scalability rules for ISV and OSV devices are analyzed and modeled. Finally, this letter applies the proposed scaling rules to the Angelov model, showing that the scaled models have excellent accuracy in terms of S-parameter and large-signal behaviors.
内源通孔(ISV)和外源通孔(OSV)是氮化镓 HEMT 的两种常见结构。这封信研究了 ISV 和 OSV 氮化镓高电子迁移率晶体管(GaN HEMT)的可扩展性差异并建立了模型。信中提供了 ISV 和 OSV 器件的详细模型参数。在此基础上,对 ISV 和 OSV 器件的不同可扩展性规则进行了分析和建模。最后,这封信将提出的缩放规则应用于 Angelov 模型,结果表明缩放模型在 S 参数和大信号行为方面具有出色的准确性。
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引用次数: 0
A 114–126-GHz Frequency Doubler With >10 dBm Output Power and >12% Efficiency in 45 nm RFSOI 45 纳米 RFSOI 中输出功率大于 10 dBm、效率大于 12% 的 114-126-GHz 倍频器
N/A ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1109/LMWT.2024.3424729
Mohammadreza Abbasi;Tanya Thapliyal;Syed Mohammad Ashab Uddin;Wooram Lee
This letter presents a D-band frequency doubler integrated with a power amplifier to achieve high output power and efficiency in 45 nm RFSOI. The proposed frequency doubler generates a broadband fully differential output by extracting the second-order harmonic from the shared source and drain nodes of a push-push differential pair and amplifying it through a common gate (CG) stage. The power amplifier exploits a novel device, the ADNFET developed by GlobalFoundries, which exhibits improved breakdown voltage for higher output power and efficiency. The fabricated IC integrates the proposed frequency doubler and power amplifier and reports the measured saturation output power greater than 10 dBm (11.7 dBm at 116 GHz) with a peak drain efficiency higher than 12% (15% at 116 GHz) from 114 to 126 GHz.
本文介绍了一种与功率放大器集成的 D 波段倍频器,可在 45 纳米 RFSOI 内实现高输出功率和效率。拟议的倍频器通过从推挽差分对的共享源极和漏极节点提取二阶谐波,并通过共门(CG)级进行放大,从而产生宽带全差分输出。功率放大器采用了 GlobalFoundries 开发的新型 ADNFET 器件,该器件具有更高的击穿电压,可实现更高的输出功率和效率。所制造的集成电路集成了所提出的倍频器和功率放大器,测量的饱和输出功率大于 10 dBm(116 GHz 时为 11.7 dBm),114 至 126 GHz 的峰值漏极效率高于 12%(116 GHz 时为 15%)。
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引用次数: 0
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IEEE microwave and wireless technology letters
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