This article presents an ultrawideband (UWB) low-noise amplifier (LNA) designed to extend bandwidth and enhance radio frequency (RF) performance under stringent low-power constraints. A self-stabilizing dc-capacitorless architecture is proposed. By eliminating the conventional dc-blocking capacitor, the amplifier achieves significant improvements in gain and noise figure (NF). A self-stabilizing bias network (SSBN) is incorporated to stabilize the bias voltage and compensate for bias point drift caused by the absence of the dc-blocking capacitor. Furthermore, multiple-resistor feedback and tri-path dual-coupling (TPDC) technique are used to greatly enhance the bandwidth. TPDC is first proposed in this letter to our knowledge. These techniques are adopted in a two-stage monolithic microwave integrated circuit (MMIC) LNA, which is fabricated in a 0.25-$mu $ m GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. The measured results show a peak gain of 17.7 dB, 1.3-dB minimum NF, and a 3-dB bandwidth of 1–15 GHz with a dc power consumption of only 39.6 mW. The fabricated LNA, including the testing pads, has a chip size of only 0.92 mm2.
{"title":"A 1–15-GHz Low-Power Self-Stabilizing DC-Capacitorless LNA With Tri-Path Dual-Coupling","authors":"Yuanyuan Wang;Xiaojie Zhang;Kuisong Wang;Yuying Zhang;Jing Wan;Xuming Sun;Tianci Zhang;Shushan Qiao;Xiaoxin Liang","doi":"10.1109/LMWT.2025.3613004","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3613004","url":null,"abstract":"This article presents an ultrawideband (UWB) low-noise amplifier (LNA) designed to extend bandwidth and enhance radio frequency (RF) performance under stringent low-power constraints. A self-stabilizing dc-capacitorless architecture is proposed. By eliminating the conventional dc-blocking capacitor, the amplifier achieves significant improvements in gain and noise figure (NF). A self-stabilizing bias network (SSBN) is incorporated to stabilize the bias voltage and compensate for bias point drift caused by the absence of the dc-blocking capacitor. Furthermore, multiple-resistor feedback and tri-path dual-coupling (TPDC) technique are used to greatly enhance the bandwidth. TPDC is first proposed in this letter to our knowledge. These techniques are adopted in a two-stage monolithic microwave integrated circuit (MMIC) LNA, which is fabricated in a 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. The measured results show a peak gain of 17.7 dB, 1.3-dB minimum NF, and a 3-dB bandwidth of 1–15 GHz with a dc power consumption of only 39.6 mW. The fabricated LNA, including the testing pads, has a chip size of only 0.92 mm<sup>2</sup>.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"127-130"},"PeriodicalIF":3.4,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-08DOI: 10.1109/LMWT.2025.3612667
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3612667","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3612667","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 10","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11197175","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145242589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-07DOI: 10.1109/LMWT.2025.3613931
Zhuoyuan Liu;Yufei Cheng;Pei-Ling Chi;Tao Yang
A reconfigurable co-design filtering low-noise amplifier (F-LNA) with improved noise figure (NF) and anti-interference capability is proposed using 0.15-$mu $ m gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor (pHEMT) process in this article. With this architecture, the proposed work successfully achieves improved tradeoff among NF, anti-inference capability, and system reconfiguration for sub-6 GHz integrated communication and radar systems and can support dynamic band and mode switching through digital control. With fully reconfigurable working modes and bands, the proposed chip can achieve a full-band gain of 21.1–25.7 dB, an NF of better than 2.2 dB, a stopband rejection of exceeding 25 dBc, and an operational current of below 120 mA, providing a highly integrated and cost-effective solution for integrated communication and radar systems.
{"title":"A 0.35–6-GHz On-Chip Reconfigurable Co-Designed Filtering Low-Noise Amplifier With Improved Tradeoff Among Noise Figure, Anti-Interference Capability, and Flexibility","authors":"Zhuoyuan Liu;Yufei Cheng;Pei-Ling Chi;Tao Yang","doi":"10.1109/LMWT.2025.3613931","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3613931","url":null,"abstract":"A reconfigurable co-design filtering low-noise amplifier (F-LNA) with improved noise figure (NF) and anti-interference capability is proposed using 0.15-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor (pHEMT) process in this article. With this architecture, the proposed work successfully achieves improved tradeoff among NF, anti-inference capability, and system reconfiguration for sub-6 GHz integrated communication and radar systems and can support dynamic band and mode switching through digital control. With fully reconfigurable working modes and bands, the proposed chip can achieve a full-band gain of 21.1–25.7 dB, an NF of better than 2.2 dB, a stopband rejection of exceeding 25 dBc, and an operational current of below 120 mA, providing a highly integrated and cost-effective solution for integrated communication and radar systems.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"107-110"},"PeriodicalIF":3.4,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter proposes a hybrid topology optimization paradigm grounded in physical constraints, introducing a novel approach to electromagnetic (EM) structure design. The methodology simultaneously broadens the design space while compressing the search domain, effectively reducing dependence on a priori data. Central to the framework is the integration of reinforcement learning (RL) for dynamic constraint generation, synergistically combined with swarm intelligence algorithms for performance optimization. To validate the proposed approach, an input matching network for a low-noise amplifier (LNA) was designed and fabricated using a commercial GaAs process. The experimental results demonstrate that the LNA achieves a bandwidth of up to 5 GHz, a noise figure (NF) below 0.72 dB, and a peak gain of 22.32 dB. Validated across multiple fabricated prototypes, the close agreement between simulation and measurement underscores the robustness and effectiveness of the proposed framework in achieving high-performance circuit design.
{"title":"Hierarchical Reinforcement Learning-Guided Framework for Impedance Matching Network Design of RFIC Application","authors":"Shiqi Wang;Yang Liu;Qingfeng Zhang;Jingwei Zhang;Min Lan;Kaiyuan Jin;Kai Yi;Chenxi Zhao;Yunqiu Wu;Wenyan Yin;Kai Kang","doi":"10.1109/LMWT.2025.3612978","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3612978","url":null,"abstract":"This letter proposes a hybrid topology optimization paradigm grounded in physical constraints, introducing a novel approach to electromagnetic (EM) structure design. The methodology simultaneously broadens the design space while compressing the search domain, effectively reducing dependence on a priori data. Central to the framework is the integration of reinforcement learning (RL) for dynamic constraint generation, synergistically combined with swarm intelligence algorithms for performance optimization. To validate the proposed approach, an input matching network for a low-noise amplifier (LNA) was designed and fabricated using a commercial GaAs process. The experimental results demonstrate that the LNA achieves a bandwidth of up to 5 GHz, a noise figure (NF) below 0.72 dB, and a peak gain of 22.32 dB. Validated across multiple fabricated prototypes, the close agreement between simulation and measurement underscores the robustness and effectiveness of the proposed framework in achieving high-performance circuit design.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"123-126"},"PeriodicalIF":3.4,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-06DOI: 10.1109/LMWT.2025.3614088
Kexin Li;Dimitra Psychogiou
K-band GaAs monolithic microwave integrated circuit (MMIC) multifunctional and multiconfigurable RF components that integrate the function of a quasi-elliptic bandpass filter (BPF), an isolator, and an RF switch filter/isolator/switch (FIS) with center frequency ($f_{text {cen}}$ ) and bandwidth (BW) tuning are reported. The proposed FISs are based on cascaded: 1) unilateral frequency-selective stages (UFSs) comprising a transistor-based path and multiresonant feedback, introducing one pole and two transmission zeros (TZs) and 2) reciprocal resonators that introduce one pole each. The UFS allows asynchronous TZ control, which can be exploited for BW tuning and intrinsic switching-off. $f_{text {cen}}$ tuning is achieved by adjusting the poles of the UFSs and reciprocal resonators. A coupled-resonator-based synthesis methodology is introduced, extending conventional reciprocal filter synthesis to scalable UFS-based unilateral filters. For experimental validation, a two-stage FIS was manufactured using a 0.15-$mu $ m GaAs process. The prototype demonstrates a quasi-elliptic response with $f_{text {cen}}$ tuning between 17.3 and 19.5 GHz, 3-dB fractional BW tuning between 14.8% and 19.4%, gain of −3.9 to −1.9 dB, and directivity of 13–20 dB. In switching-off mode, it achieves >20-dB isolation over 17.7–19.7 GHz.
{"title":"Multiconfigurable RF Codesigned GaAs MMIC Filter/Isolator/Switch (FIS)","authors":"Kexin Li;Dimitra Psychogiou","doi":"10.1109/LMWT.2025.3614088","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3614088","url":null,"abstract":"K-band GaAs monolithic microwave integrated circuit (MMIC) multifunctional and multiconfigurable RF components that integrate the function of a quasi-elliptic bandpass filter (BPF), an isolator, and an RF switch filter/isolator/switch (FIS) with center frequency (<inline-formula> <tex-math>$f_{text {cen}}$ </tex-math></inline-formula>) and bandwidth (BW) tuning are reported. The proposed FISs are based on cascaded: 1) unilateral frequency-selective stages (UFSs) comprising a transistor-based path and multiresonant feedback, introducing one pole and two transmission zeros (TZs) and 2) reciprocal resonators that introduce one pole each. The UFS allows asynchronous TZ control, which can be exploited for BW tuning and intrinsic switching-off. <inline-formula> <tex-math>$f_{text {cen}}$ </tex-math></inline-formula> tuning is achieved by adjusting the poles of the UFSs and reciprocal resonators. A coupled-resonator-based synthesis methodology is introduced, extending conventional reciprocal filter synthesis to scalable UFS-based unilateral filters. For experimental validation, a two-stage FIS was manufactured using a 0.15-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaAs process. The prototype demonstrates a quasi-elliptic response with <inline-formula> <tex-math>$f_{text {cen}}$ </tex-math></inline-formula> tuning between 17.3 and 19.5 GHz, 3-dB fractional BW tuning between 14.8% and 19.4%, gain of −3.9 to −1.9 dB, and directivity of 13–20 dB. In switching-off mode, it achieves >20-dB isolation over 17.7–19.7 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"131-134"},"PeriodicalIF":3.4,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11194083","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-06DOI: 10.1109/LMWT.2025.3613530
Jianfeng Shao;Xi Hong;Wenjie Wang
The strong data fitting ability of neural networks (NNs) makes them widely used in research on digital predistortion (DPD) for mitigating the nonlinear effects of power amplifiers (PAs). However, existing NN needs a large number of coefficients to achieve satisfactory performance, especially in the wider bandwidth scenarios. To address the high complexity demand of conventional DPD NNs, a Kronecker product-based module is proposed. It is structured using linear layers and Kronecker product operations to compose the nonlinear terms based on the memory polynomial function. Verification using 100- and 400-MHz datasets demonstrates the effectiveness of the KP-based module. It enables conventional DPD NNs to achieve better performance while preventing it degradation under lower NN complexity. Afterward, the stabilization validation also demonstrates the KP-based module helps DPD NNs to achieve more stable performance.
{"title":"A Kronecker Product-Based Module for Digital Predistortion Neural Network for the Wide Bandwidth Power Amplifier","authors":"Jianfeng Shao;Xi Hong;Wenjie Wang","doi":"10.1109/LMWT.2025.3613530","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3613530","url":null,"abstract":"The strong data fitting ability of neural networks (NNs) makes them widely used in research on digital predistortion (DPD) for mitigating the nonlinear effects of power amplifiers (PAs). However, existing NN needs a large number of coefficients to achieve satisfactory performance, especially in the wider bandwidth scenarios. To address the high complexity demand of conventional DPD NNs, a Kronecker product-based module is proposed. It is structured using linear layers and Kronecker product operations to compose the nonlinear terms based on the memory polynomial function. Verification using 100- and 400-MHz datasets demonstrates the effectiveness of the KP-based module. It enables conventional DPD NNs to achieve better performance while preventing it degradation under lower NN complexity. Afterward, the stabilization validation also demonstrates the KP-based module helps DPD NNs to achieve more stable performance.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"143-146"},"PeriodicalIF":3.4,"publicationDate":"2025-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-03DOI: 10.1109/LMWT.2025.3613206
Qihang Zhang;Zhiwei Zhang;Rui Ling;Xuefei Xuan
This letter presents a novel filtering high-efficiency transistor-based rectifier operating in continuous class-B/J mode. The proposed design incorporates a filter structure into the transistor-based RF-dc rectifier to suppress out-of-band frequency components, thus improving the rectification efficiency. Detailed analysis of the filter structure is presented, and key design parameters are obtained to realize the filtering function. For validation, a filtering rectifier is designed and measured based on a GaN HEMT CGH40010F. Experiments show that within the 2.3–2.6 GHz operating frequency range, the rectifier achieves a peak rectification efficiency over 80% when a dc load of $105~Omega $ , a gate voltage of −3 V, and an input power of 40 dBm are employed. To the best of the authors’ knowledge, this letter, for the first time, realizes a transistor-based rectifier with out-of-band suppression capability.
{"title":"A Filtering Class-B/J High-Efficiency RF-DC Rectifier Based on GaN Transistor","authors":"Qihang Zhang;Zhiwei Zhang;Rui Ling;Xuefei Xuan","doi":"10.1109/LMWT.2025.3613206","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3613206","url":null,"abstract":"This letter presents a novel filtering high-efficiency transistor-based rectifier operating in continuous class-B/J mode. The proposed design incorporates a filter structure into the transistor-based RF-dc rectifier to suppress out-of-band frequency components, thus improving the rectification efficiency. Detailed analysis of the filter structure is presented, and key design parameters are obtained to realize the filtering function. For validation, a filtering rectifier is designed and measured based on a GaN HEMT CGH40010F. Experiments show that within the 2.3–2.6 GHz operating frequency range, the rectifier achieves a peak rectification efficiency over 80% when a dc load of <inline-formula> <tex-math>$105~Omega $ </tex-math></inline-formula>, a gate voltage of −3 V, and an input power of 40 dBm are employed. To the best of the authors’ knowledge, this letter, for the first time, realizes a transistor-based rectifier with out-of-band suppression capability.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"103-106"},"PeriodicalIF":3.4,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-29DOI: 10.1109/LMWT.2025.3612292
Debanjali Sarkar;Partha Pratim Shome;Sembiam R. Rengarajan
Reconfigurable microwave filters (RMFs) are essential for modern wireless systems. They offer dynamic adaptability to diverse frequency requirements. However, as geometric complexity and the number of switching elements increase, accurate structure estimation, including diode states and design parameters, becomes challenging. To address this limitation, a deep belief network-extreme learning machine (DBN-ELM) model optimized using the tree-structured Parzen estimator (TPE) is introduced for efficient estimation of the filter structure. The deep belief network (DBN) extracts hierarchical features from frequency responses, while the extreme learning machine (ELM) maps them to diode states and design parameters. TPE-driven optimization enhances predictive accuracy while reducing computational cost. The proposed model achieves a cross-validation accuracy (CVA) of 97.02% with low mean square error (MSE), outperforming conventional machine learning (ML) approaches. For experimental validation, model predicted outputs are used to simulate and fabricate a prototype filter. The close match between simulated and measured results confirms the reliability of the model and establishes its utility for inverse design and rapid prototyping of RMFs.
{"title":"Hybrid Deep Learning-Based Inverse Design and Structural Estimation of Reconfigurable Microwave Filters","authors":"Debanjali Sarkar;Partha Pratim Shome;Sembiam R. Rengarajan","doi":"10.1109/LMWT.2025.3612292","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3612292","url":null,"abstract":"Reconfigurable microwave filters (RMFs) are essential for modern wireless systems. They offer dynamic adaptability to diverse frequency requirements. However, as geometric complexity and the number of switching elements increase, accurate structure estimation, including diode states and design parameters, becomes challenging. To address this limitation, a deep belief network-extreme learning machine (DBN-ELM) model optimized using the tree-structured Parzen estimator (TPE) is introduced for efficient estimation of the filter structure. The deep belief network (DBN) extracts hierarchical features from frequency responses, while the extreme learning machine (ELM) maps them to diode states and design parameters. TPE-driven optimization enhances predictive accuracy while reducing computational cost. The proposed model achieves a cross-validation accuracy (CVA) of 97.02% with low mean square error (MSE), outperforming conventional machine learning (ML) approaches. For experimental validation, model predicted outputs are used to simulate and fabricate a prototype filter. The close match between simulated and measured results confirms the reliability of the model and establishes its utility for inverse design and rapid prototyping of RMFs.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"147-150"},"PeriodicalIF":3.4,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-29DOI: 10.1109/LMWT.2025.3612405
Zhuang Miao;Nengxu Zhu;Fanyi Meng
This letter analyzes the common-inductive-biased dual-shunt switch circuits for millimeter-wave applications. With the introduced biasing inductor at control pins, the dual-shunt switches reveal >50% reduction in its equivalent off-capacitance at a proper inductor sizing, subsequently leading to improved switching ratio of isolation over insertion loss for a shunt switching cell. To validate the design theory, a $W$ -band single-pole-double-throw switch was designed and fabricated in a 0.13-$mu $ m SiGe technology. The measured results show an operation bandwidth of 80–110 GHz, an in-band insertion loss of 1.8–3 dB, and an enhanced isolation of 32–47 dB. It demonstrates the highest ratio of isolation over insertion loss among similar silicon-based $W$ -band switches.
本文分析了用于毫米波应用的共感偏置双分流开关电路。在控制引脚处引入偏置电感后，双分流开关显示，在适当的电感尺寸下，其等效关断电容减少了50%，从而提高了分流开关单元的隔离比和插入损耗。为了验证设计理论，设计并制造了一个W波段单极双掷开关，采用0.13- $mu $ m SiGe技术。测量结果表明，工作带宽为80-110 GHz，带内插入损耗为1.8-3 dB，隔离度增强为32-47 dB。在类似的硅基W波段开关中，它展示了最高的隔离比插入损耗。
{"title":"Analysis of Common-Inductive-Bias Technique and Its Application to a W-Band SPDT Switch With Enhanced Isolation","authors":"Zhuang Miao;Nengxu Zhu;Fanyi Meng","doi":"10.1109/LMWT.2025.3612405","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3612405","url":null,"abstract":"This letter analyzes the common-inductive-biased dual-shunt switch circuits for millimeter-wave applications. With the introduced biasing inductor at control pins, the dual-shunt switches reveal >50% reduction in its equivalent <sc>off</small>-capacitance at a proper inductor sizing, subsequently leading to improved switching ratio of isolation over insertion loss for a shunt switching cell. To validate the design theory, a <inline-formula> <tex-math>$W$ </tex-math></inline-formula>-band single-pole-double-throw switch was designed and fabricated in a 0.13-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m SiGe technology. The measured results show an operation bandwidth of 80–110 GHz, an in-band insertion loss of 1.8–3 dB, and an enhanced isolation of 32–47 dB. It demonstrates the highest ratio of isolation over insertion loss among similar silicon-based <inline-formula> <tex-math>$W$ </tex-math></inline-formula>-band switches.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"119-122"},"PeriodicalIF":3.4,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents an all-digital transmitter architecture that features a pair of low-cost multigigabit transceivers (MGTs) operating at 16 GS/s. Unlike conventional systems that require high-resolution or high-speed digital to analog converters (DACs), which impose heavy resource demands, this work leverages pulse modulation combined with dithering and quantization process to generate RF signals using single-bit data streams. This enables low-cost RF transmission without compromising linearity performance. By driving the power amplifiers (PAs) entirely with two-level digital signals, the PAs can be biased lower and operate more efficiently. The proposed system was validated with a 20-MHz 64-quadratic-amplitude modulation (QAM) 5G new radio (NR) uplink (UL) signal. The transmitter achieved −31.2 dBc adjacent channel leakage ratio (ACLR), 4.2% error vector magnitude (EVM), and 36.9% efficiency. The proposed transmitters meet the 5G NR requirements without any additional linearization.
{"title":"A Low-Cost All-Digital Transmitter Using Multigigabit Transceivers","authors":"Yu-Chen Chang;Chun-Ying Chen;Shuo-Heng Xu;Jau-Horng Chen","doi":"10.1109/LMWT.2025.3611387","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3611387","url":null,"abstract":"This letter presents an all-digital transmitter architecture that features a pair of low-cost multigigabit transceivers (MGTs) operating at 16 GS/s. Unlike conventional systems that require high-resolution or high-speed digital to analog converters (DACs), which impose heavy resource demands, this work leverages pulse modulation combined with dithering and quantization process to generate RF signals using single-bit data streams. This enables low-cost RF transmission without compromising linearity performance. By driving the power amplifiers (PAs) entirely with two-level digital signals, the PAs can be biased lower and operate more efficiently. The proposed system was validated with a 20-MHz 64-quadratic-amplitude modulation (QAM) 5G new radio (NR) uplink (UL) signal. The transmitter achieved −31.2 dBc adjacent channel leakage ratio (ACLR), 4.2% error vector magnitude (EVM), and 36.9% efficiency. The proposed transmitters meet the 5G NR requirements without any additional linearization.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"151-154"},"PeriodicalIF":3.4,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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