Pub Date : 2025-06-25DOI: 10.1109/LMWT.2025.3581156
Kariny Nunes Maia;Audrey Martin;Pierre Blondy
This letter presents a phase-change material (PCM) switch-based trimming technique for an radio frequency (RF) L–C output matching circuit fabricated on high-resistivity silicon. By leveraging the memory properties of PCM switches, the proposed circuit enables precise postfabrication adjustments to compensating for active device variations. The measured L–C circuit inductor is tuned from 1.3 to 1.6 nH by switching its parallel capacitance, while the capacitor is adjusted from 0.7 to 1.2 pF, resulting in four distinct impedance states. The measured total insertion loss ranges from −1.62 to −2.95 dB, showing good agreement with simulations. The complete circuit occupies an area of $332times 363~mu $ m2, which is nearly identical to its fixed version.
{"title":"RF Integrated Passive Devices Trimming Using Phase Change Material Switches","authors":"Kariny Nunes Maia;Audrey Martin;Pierre Blondy","doi":"10.1109/LMWT.2025.3581156","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3581156","url":null,"abstract":"This letter presents a phase-change material (PCM) switch-based trimming technique for an radio frequency (RF) <italic>L</i>–<italic>C</i> output matching circuit fabricated on high-resistivity silicon. By leveraging the memory properties of PCM switches, the proposed circuit enables precise postfabrication adjustments to compensating for active device variations. The measured <italic>L</i>–<italic>C</i> circuit inductor is tuned from 1.3 to 1.6 nH by switching its parallel capacitance, while the capacitor is adjusted from 0.7 to 1.2 pF, resulting in four distinct impedance states. The measured total insertion loss ranges from −1.62 to −2.95 dB, showing good agreement with simulations. The complete circuit occupies an area of <inline-formula> <tex-math>$332times 363~mu $ </tex-math></inline-formula>m<sup>2</sup>, which is nearly identical to its fixed version.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1340-1343"},"PeriodicalIF":3.4,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, a bandpass filter (BPF) operating at the W band is presented by utilizing microstructure electrochemical fabrication (MEFAB) technology. The BPF is made up of two coupled air-filled rectangular cavities which are purposely developed for a second-order Chebyshev response. Inside each cavity, half-wavelength short-circuited stubs are attached to support the vertical ground-signal–ground (GSG) feeding probes. Naturally, by means of adjusting the relative position of two feeding probes, extra transmission zeros (TZs) can be introduced to improve the out-of-band rejection. Finally, a practical air-cavity filter is fabricated for validation. The measured results show good agreement with the simulated ones, exhibiting a low in-band insertion loss of about 0.66 dB and the 3-dB fractional bandwidth (FBW) of 3.6% with the central frequency at 94 GHz.
{"title":"An Air-Filled Cavity Bandpass Filter Processed by Microstructure Electrochemical Fabrication With Self-Supported GSG Feeding Probe","authors":"Feng Huang;Jing Zhou;Wanping Zhang;Lijie Xu;Bo Li;Lei Zhu","doi":"10.1109/LMWT.2025.3581334","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3581334","url":null,"abstract":"In this letter, a bandpass filter (BPF) operating at the <italic>W</i> band is presented by utilizing microstructure electrochemical fabrication (MEFAB) technology. The BPF is made up of two coupled air-filled rectangular cavities which are purposely developed for a second-order Chebyshev response. Inside each cavity, half-wavelength short-circuited stubs are attached to support the vertical ground-signal–ground (GSG) feeding probes. Naturally, by means of adjusting the relative position of two feeding probes, extra transmission zeros (TZs) can be introduced to improve the out-of-band rejection. Finally, a practical air-cavity filter is fabricated for validation. The measured results show good agreement with the simulated ones, exhibiting a low in-band insertion loss of about 0.66 dB and the 3-dB fractional bandwidth (FBW) of 3.6% with the central frequency at 94 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1280-1283"},"PeriodicalIF":3.4,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-20DOI: 10.1109/LMWT.2025.3578722
Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang
This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-$mu $ m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.
{"title":"Fully Integrated GaAs MMIC Bandpass Filtering Power Amplifier Chip With Compact Couple-Line-Based Matching Network","authors":"Xiaopan Chen;Yongle Wu;Zhuoyin Chen;Moushu Yang;Shuchen Zhen;Weimin Wang","doi":"10.1109/LMWT.2025.3578722","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578722","url":null,"abstract":"This letter presents a novel bandpass filtering power amplifier (FPA) structure featuring a dc-block input matching network (IMN), which utilizes a filtering impedance transformer consisting of two cascaded coupled-lines, a short-circuit coupled-line (SCCL), and a parallel resonator (PR). The SCCL generates transmission zeros (TZs) near the passband, enabling sharp roll-off characteristics. The PR enhances filtering response while occupying minimal circuit area. For verification, a monolithic microwave-integrated circuit (MMIC) FPA using 0.25-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m GaAs process was designed and fabricated, implementing serpentine routing for a highly compact layout. The measurement results demonstrate 30-dB out-of-band rejection, 27-dBm output power, and 46%–55% drain efficiency (DE) in 9–11 GHz. The adjacent channel power ratio (ACPR) is lower than −48.4 dBc with digital predistortion (DPD) using a 60-MHz 64-QAM 5G-NR signal.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1416-1419"},"PeriodicalIF":3.4,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-19DOI: 10.1109/LMWT.2025.3577982
Ahmed Helaly;Mohammed Helal;Gabriel M. Rebeiz
This letter presents a 10–60-GHz low-noise amplifier (LNA) implemented in CMOS FinFET technology. The LNA consists of four gain-staggered cascode stages to cover the wide bandwidth. Resistive feedback and multipole loads are used to achieve wideband operation. A high coupling coefficient balun is used to generate a differential output signal. The LNA has a measured small-signal peak gain of 23 dB with a noise figure (NF) of 3.2–4.4 dB. The LNA also achieves an output-referred 1-dB compression point of 0 dBm at the center frequency of the band and consumes a total power of 32 mW occupying an active area of $0.8times 0.29~text {mm}^{2}$ . Application areas are phased arrays covering multiple 5G bands and multistandard receivers.
{"title":"A 10–60-GHz LNA With 3.2–4.4-dB NF for Wideband Applications in 16-nm FinFET Process","authors":"Ahmed Helaly;Mohammed Helal;Gabriel M. Rebeiz","doi":"10.1109/LMWT.2025.3577982","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3577982","url":null,"abstract":"This letter presents a 10–60-GHz low-noise amplifier (LNA) implemented in CMOS FinFET technology. The LNA consists of four gain-staggered cascode stages to cover the wide bandwidth. Resistive feedback and multipole loads are used to achieve wideband operation. A high coupling coefficient balun is used to generate a differential output signal. The LNA has a measured small-signal peak gain of 23 dB with a noise figure (NF) of 3.2–4.4 dB. The LNA also achieves an output-referred 1-dB compression point of 0 dBm at the center frequency of the band and consumes a total power of 32 mW occupying an active area of <inline-formula> <tex-math>$0.8times 0.29~text {mm}^{2}$ </tex-math></inline-formula>. Application areas are phased arrays covering multiple 5G bands and multistandard receivers.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1360-1363"},"PeriodicalIF":3.4,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-19DOI: 10.1109/LMWT.2025.3579399
Xinyi Chen;Qianyin Xiang
This letter introduces a group delay controller (GDC) based on reflective tunable filter with tunable frequency and tunable group delay. The wideband nonlinear conversion of the reflective low-pass delay network to the reflective bandpass delay network was studied, and the deterioration of tunable group delay response was analyzed. Asymmetric tuned reflective topology with self-coupling coefficients was used to compensate for the flatness of the in-band group delay. As a demonstration, a reflective tunable group delay circuit was designed based on tunable quarter-wavelength microstrip resonator and feeding network with tunable external quality factor ($Q_{e}$ ). The measurements show that the GDC can be tuned from 8 to 20 ns, with a tunable center frequency from 0.8 to 1 GHz.
{"title":"A Novel Group Delay Controller Based on Reflective Tunable Filter","authors":"Xinyi Chen;Qianyin Xiang","doi":"10.1109/LMWT.2025.3579399","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3579399","url":null,"abstract":"This letter introduces a group delay controller (GDC) based on reflective tunable filter with tunable frequency and tunable group delay. The wideband nonlinear conversion of the reflective low-pass delay network to the reflective bandpass delay network was studied, and the deterioration of tunable group delay response was analyzed. Asymmetric tuned reflective topology with self-coupling coefficients was used to compensate for the flatness of the in-band group delay. As a demonstration, a reflective tunable group delay circuit was designed based on tunable quarter-wavelength microstrip resonator and feeding network with tunable external quality factor (<inline-formula> <tex-math>$Q_{e}$ </tex-math></inline-formula>). The measurements show that the GDC can be tuned from 8 to 20 ns, with a tunable center frequency from 0.8 to 1 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1300-1303"},"PeriodicalIF":3.4,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a K-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) with frequency reconfigurable operation in a 0.15-$mu text {m}$ GaN-on-SiC process. The proposed reconfigurable PA (RPA) is composed of a broadband output power stage and a driver stage with a reconfigurable interstage matching network (ISMN). Frequency reconfiguration is achieved by combining and embedding a switch-loaded coupled line (SLCL) and a switch-loaded transmission line (SLTL) inductor within the ISMN. The operating frequency band of the proposed RPA can be changed using the switch device in ISMN. Measurements results indicate that the proposed RPA features a maximum power-added efficiency (PAE) of 26.5% and an output power of over 30 dBm at a lower frequency band (19.5–21.5 GHz). When configured at a higher frequency operating mode, the RPA achieves a maximum PAE of 21% and an output power over 30 dBm at 23.5–25.5 GHz. The modulation tests are performed using a 100-MHz 64-QAM modulated signal with 6.09-dB peak-to-average power ratio (PAPR). The proposed RPA achieves better than −27.5-dBc adjacent channel leakage ratio (ACLR) at 19.5 GHz and −29 dBc at 24.5 GHz without digital predistortion (DPD), respectively.
{"title":"A K-Band Reconfigurable GaN Power Amplifier Using Switch-Loaded Coupled Line","authors":"Xin He;Haoshen Zhu;Dingyuan Zeng;Zhikai Hu;Shaowei Liao;Quan Xue","doi":"10.1109/LMWT.2025.3578417","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578417","url":null,"abstract":"This letter presents a K-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) with frequency reconfigurable operation in a 0.15-<inline-formula> <tex-math>$mu text {m}$ </tex-math></inline-formula> GaN-on-SiC process. The proposed reconfigurable PA (RPA) is composed of a broadband output power stage and a driver stage with a reconfigurable interstage matching network (ISMN). Frequency reconfiguration is achieved by combining and embedding a switch-loaded coupled line (SLCL) and a switch-loaded transmission line (SLTL) inductor within the ISMN. The operating frequency band of the proposed RPA can be changed using the switch device in ISMN. Measurements results indicate that the proposed RPA features a maximum power-added efficiency (PAE) of 26.5% and an output power of over 30 dBm at a lower frequency band (19.5–21.5 GHz). When configured at a higher frequency operating mode, the RPA achieves a maximum PAE of 21% and an output power over 30 dBm at 23.5–25.5 GHz. The modulation tests are performed using a 100-MHz 64-QAM modulated signal with 6.09-dB peak-to-average power ratio (PAPR). The proposed RPA achieves better than −27.5-dBc adjacent channel leakage ratio (ACLR) at 19.5 GHz and −29 dBc at 24.5 GHz without digital predistortion (DPD), respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1408-1411"},"PeriodicalIF":3.4,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-18DOI: 10.1109/LMWT.2025.3578244
M. Baranowski;A. Pons-Abenza;I. Arregui;T. Lopetegi;G. Álvarez-Botero;A. Lamecki;M. A. G. Laso;P. Martin-Iglesias
In this letter, a novel design for a 3-D-printed, self-supported coaxial-line X-band filter is presented. The filter is intended for Earth observation (EO) data downlink systems, where it must effectively reject signals in a wide frequency range. The filter design incorporates a 15th-order low-pass filter structure with a smooth profile, integrated with a short bandpass section with four $lambda /4$ short-circuited stubs. The optimization of the low-pass section is attained by means of shape deformation, including the inner and outer coaxial conductors, and leads to a wide rejection band up to around 40 GHz, to suppress the third harmonic and other undesired out-of-band frequencies. A prototype was fabricated in one piece in an aluminum alloy using selective laser melting (SLM) and measured, exhibiting excellent agreement with simulations. In terms of out-of-band performance, the proposed coaxial-line filter is superior to other related state-of-the-art solutions.
{"title":"A 3-D-Printing-Oriented Coaxial-Line Filter With Wide Out-of-Band Rejection","authors":"M. Baranowski;A. Pons-Abenza;I. Arregui;T. Lopetegi;G. Álvarez-Botero;A. Lamecki;M. A. G. Laso;P. Martin-Iglesias","doi":"10.1109/LMWT.2025.3578244","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578244","url":null,"abstract":"In this letter, a novel design for a 3-D-printed, self-supported coaxial-line X-band filter is presented. The filter is intended for Earth observation (EO) data downlink systems, where it must effectively reject signals in a wide frequency range. The filter design incorporates a 15th-order low-pass filter structure with a smooth profile, integrated with a short bandpass section with four <inline-formula> <tex-math>$lambda /4$ </tex-math></inline-formula> short-circuited stubs. The optimization of the low-pass section is attained by means of shape deformation, including the inner and outer coaxial conductors, and leads to a wide rejection band up to around 40 GHz, to suppress the third harmonic and other undesired out-of-band frequencies. A prototype was fabricated in one piece in an aluminum alloy using selective laser melting (SLM) and measured, exhibiting excellent agreement with simulations. In terms of out-of-band performance, the proposed coaxial-line filter is superior to other related state-of-the-art solutions.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1292-1295"},"PeriodicalIF":3.4,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-18DOI: 10.1109/LMWT.2025.3578707
Xinyu Zhang;Yongle Wu;Wei Zhao;Shiyu Xie;Zhuoyin Chen;Weimin Wang
This letter presents a compact dual-band filtering power divider (DBFPD) based on a novel dual-$pi $ -type matching circuit (MC). The proposed dual-$pi $ -type MC achieves precise dual-band matching through analytical design, and integrated hybrid resonators (HRs) significantly enhance the bandwidth of passbands. Three independently controllable transmission zeros (TZs) of DBFPD improve stopband rejection and frequency selectivity. To validate the design, a DBFPD working at 8.9 and 21.6 GHz with a compact size of $1.9times 3.1$ mm2 is fabricated and measured using integrated passive device (IPD). The design achieves low insertion loss (IL) and wide bandwidth, with minimum ILs of 0.43 and 0.47 dB and 3-dB bandwidths of 50% and 33.5%, respectively.
{"title":"A Novel IPD-Based Dual-Band Filtering Power Divider Chip Across X-Band and K-Band","authors":"Xinyu Zhang;Yongle Wu;Wei Zhao;Shiyu Xie;Zhuoyin Chen;Weimin Wang","doi":"10.1109/LMWT.2025.3578707","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578707","url":null,"abstract":"This letter presents a compact dual-band filtering power divider (DBFPD) based on a novel dual-<inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type matching circuit (MC). The proposed dual-<inline-formula> <tex-math>$pi $ </tex-math></inline-formula>-type MC achieves precise dual-band matching through analytical design, and integrated hybrid resonators (HRs) significantly enhance the bandwidth of passbands. Three independently controllable transmission zeros (TZs) of DBFPD improve stopband rejection and frequency selectivity. To validate the design, a DBFPD working at 8.9 and 21.6 GHz with a compact size of <inline-formula> <tex-math>$1.9times 3.1$ </tex-math></inline-formula> mm<sup>2</sup> is fabricated and measured using integrated passive device (IPD). The design achieves low insertion loss (IL) and wide bandwidth, with minimum ILs of 0.43 and 0.47 dB and 3-dB bandwidths of 50% and 33.5%, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1420-1423"},"PeriodicalIF":3.4,"publicationDate":"2025-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-17DOI: 10.1109/LMWT.2025.3577359
Meicheng Liu;Yuefeng Hou;Zhenshuai Fu;Shuang Zheng;Tianjie Guo;Liqi Yang;Jin Wu;Kaixue Ma
This letter reports a 7-bit 360° multifunction reconfigurable phase shifter (RPS) with independently tuned transmission and reflection modes. The proposed RPS is a promising candidate for multibit reconfigurable intelligent surfaces (RISs) with high gain and full-space coverage. First, the novel topology and design method of the multifunction RPS are proposed in this letter for the first time. The proposed RPS can provide time-division independent 360° transmission and reflection phase tuning with a single shared reflection-type phase shifter topology. Second, in the transmission mode, a two-step phase extraction method is adopted, obtaining a 360° phase shift with low phase steps and a simplified process. The traversal states are reduced by (1–$2^{1 - n}$ ) $times 100$ % for an n-bit varactor. Third, in the reflection mode, the equivalent topology in the reflection mode is enhanced to enable a 360° phase shift with moderate phase steps as well. Finally, our proof-of-concept RPS design is implemented in PCB technology. The proposed RPS exhibits a phase range of 369° with an insertion loss of $2.26~pm ~0.74$ dB in transmission mode, and a phase range of 365° with an insertion loss of $3.07~pm ~1.53$ dB in reflection mode at 2.45 GHz.
{"title":"Multifunction Reconfigurable Phase Shifter With Independent 360° Transmission and Reflection Phase Tuning for Multibit Reconfigurable Intelligent Surface","authors":"Meicheng Liu;Yuefeng Hou;Zhenshuai Fu;Shuang Zheng;Tianjie Guo;Liqi Yang;Jin Wu;Kaixue Ma","doi":"10.1109/LMWT.2025.3577359","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3577359","url":null,"abstract":"This letter reports a 7-bit 360° multifunction reconfigurable phase shifter (RPS) with independently tuned transmission and reflection modes. The proposed RPS is a promising candidate for multibit reconfigurable intelligent surfaces (RISs) with high gain and full-space coverage. First, the novel topology and design method of the multifunction RPS are proposed in this letter for the first time. The proposed RPS can provide time-division independent 360° transmission and reflection phase tuning with a single shared reflection-type phase shifter topology. Second, in the transmission mode, a two-step phase extraction method is adopted, obtaining a 360° phase shift with low phase steps and a simplified process. The traversal states are reduced by (1–<inline-formula> <tex-math>$2^{1 - n}$ </tex-math></inline-formula>) <inline-formula> <tex-math>$times 100$ </tex-math></inline-formula>% for an <italic>n</i>-bit varactor. Third, in the reflection mode, the equivalent topology in the reflection mode is enhanced to enable a 360° phase shift with moderate phase steps as well. Finally, our proof-of-concept RPS design is implemented in PCB technology. The proposed RPS exhibits a phase range of 369° with an insertion loss of <inline-formula> <tex-math>$2.26~pm ~0.74$ </tex-math></inline-formula> dB in transmission mode, and a phase range of 365° with an insertion loss of <inline-formula> <tex-math>$3.07~pm ~1.53$ </tex-math></inline-formula> dB in reflection mode at 2.45 GHz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1328-1331"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-17DOI: 10.1109/LMWT.2025.3578337
Wonsub Lim;Yaw A. Mensah;Arya Moradinia;MoonKyu Cho;John D. Cressler
An ultrabroadband Wilkinson power divider employing a single-folded inductor is presented. Unlike conventional designs with discrete inductors, this work utilizes a multisection topology with a symmetric inductor that leverages mutual inductance to significantly extend the fractional bandwidth (FBW). The divider achieves over 10-dB return loss and isolation across 2.2–82 GHz, corresponding to a 190% FBW. Plus, custom-designed metal-oxide–metal (MOM) shunt capacitors and resistors are embedded at the crossing section of the inductor paths to reduce parasitic inductance and additional loss, achieving 2.2-dB insertion loss at 80 GHz. Furthermore, the measured amplitude and phase imbalances are under 0.1 dB and 0.3°, respectively, due to a novel electrical length compensation technique. To the best of the authors’ knowledge, this design offers the widest FBW reported to date among Wilkinson power dividers.
{"title":"A 2.2–82-GHz Ultrabroadband Wilkinson Power Divider Using a Multisection Folded Inductor in 130-nm SiGe BiCMOS","authors":"Wonsub Lim;Yaw A. Mensah;Arya Moradinia;MoonKyu Cho;John D. Cressler","doi":"10.1109/LMWT.2025.3578337","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3578337","url":null,"abstract":"An ultrabroadband Wilkinson power divider employing a single-folded inductor is presented. Unlike conventional designs with discrete inductors, this work utilizes a multisection topology with a symmetric inductor that leverages mutual inductance to significantly extend the fractional bandwidth (FBW). The divider achieves over 10-dB return loss and isolation across 2.2–82 GHz, corresponding to a 190% FBW. Plus, custom-designed metal-oxide–metal (MOM) shunt capacitors and resistors are embedded at the crossing section of the inductor paths to reduce parasitic inductance and additional loss, achieving 2.2-dB insertion loss at 80 GHz. Furthermore, the measured amplitude and phase imbalances are under 0.1 dB and 0.3°, respectively, due to a novel electrical length compensation technique. To the best of the authors’ knowledge, this design offers the widest FBW reported to date among Wilkinson power dividers.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 9","pages":"1320-1323"},"PeriodicalIF":3.4,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145078671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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