Pub Date : 2025-02-03DOI: 10.1007/s11090-025-10550-7
D. A. Butnyakov, I. A. Sorokin, D. V. Kolodko
This work investigates the features of a sputtering system with an asymmetrical planar hollow cathode discharge at 10–100 Pa pressures. The asymmetrical hollow cathode discharge occurs between two planar cathodes with different negative potentials. The problem of diffusion transport of sputtered material was formulated and numerically solved. To verify the results of the numerical model, tungsten coatings were deposited at a pressure of 40 Pa. The numerical model results based on the diffusion transport were compared with experimental data. The qualitative agreement between the model and experimental results was demonstrated. For substrates with positive curvature and a size smaller than the output aperture of the sputtering system, a characteristic increase in film thickness to the edges has been experimentally and numerically shown, which is associated with the diffusive nature of the sputtered material transport.
{"title":"Diffusion Transport of Target Material for a Planar Asymmetrical Hollow Cathode Sputtering System","authors":"D. A. Butnyakov, I. A. Sorokin, D. V. Kolodko","doi":"10.1007/s11090-025-10550-7","DOIUrl":"10.1007/s11090-025-10550-7","url":null,"abstract":"<div><p>This work investigates the features of a sputtering system with an asymmetrical planar hollow cathode discharge at 10–100 Pa pressures. The asymmetrical hollow cathode discharge occurs between two planar cathodes with different negative potentials. The problem of diffusion transport of sputtered material was formulated and numerically solved. To verify the results of the numerical model, tungsten coatings were deposited at a pressure of 40 Pa. The numerical model results based on the diffusion transport were compared with experimental data. The qualitative agreement between the model and experimental results was demonstrated. For substrates with positive curvature and a size smaller than the output aperture of the sputtering system, a characteristic increase in film thickness to the edges has been experimentally and numerically shown, which is associated with the diffusive nature of the sputtered material transport.</p></div>","PeriodicalId":734,"journal":{"name":"Plasma Chemistry and Plasma Processing","volume":"45 3","pages":"1029 - 1044"},"PeriodicalIF":2.6,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143793095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study presents the development of an equivalent electrical circuit model using MATLAB/Simulink to simulate the discharge behaviour of a coaxial cylindrical dielectric barrier discharge (DBD) and explores the influence of the flow regime on its electrical characteristics. Validation of the experimental findings was performed using Simulink and Chemical Workbench (CWB). The simulations provided valuable insights into the DBD behaviour, facilitating its performance optimization. The equivalent circuit model demonstrated accurate predictions of peak current amplitude ((I_{peak} )), root mean square of total current (left( { I_{rms } } right)), and microfilament discharge resistance (left( { R_{f } } right)). The study unveiled a significant impact of the flow regime on the electrical properties of the DBD. As the flow rate (Q) transitioned from the laminar flow regime (Reynolds number, Re = 300) to the turbulent flow regime (Re = 4500), the peak current ((I_{peak} )) exhibited an increase from 60 to 80 mA for Argon (Ar) and 90–140 mA for Nitrogen (N2) gas. Simultaneously, the (R_{f }) decreased from 3.0 to 0.6 mΩ for Ar and 2.0 mΩ to 0.1 mΩ for N2. The effect of Q on discharge mode was analyzed using image analysis. In N2, the discharge remained more filamentary across a wider range of Q (from 5.8 to 31.5 SLPM) compared to Ar. Electron density (ne) estimated from both experimental data and the CWB model, was found to be of the same order of magnitude. For both gases, an increase in Q led to a rise in ne and a reduction in (R_{f}). Even at higher Q, the filamentary structure in N2 was more persistent compared to Ar. The effect of Q on gas temperature ((T_{g })) was also studied, showing a decrease in (T_{g }) for both Ar and N2, from 408 to 320 K for Ar and from 689 to 435 K for N2, corresponding to increased Q under identical conditions. The impact of the flow regime on (R_{f }) was analyzed using the Peclet number (Pe) to gain a better understanding of heat/mass transport from the discharge to the surroundings. The MATLAB/Simulink and CWB models corroborated these findings, demonstrating excellent agreement with the experimental results. This validation underscores the reliability of the models in effectively characterizing the discharge parameters of the DBD.
{"title":"Investigating Flow-Induced Changes in Coaxial Cylindrical Dielectric Barrier Discharge Using Equivalent Circuit Modelling and Chemical Workbench Simulations","authors":"Ram Mohan Pathak, J. Ananthanarasimhan, Sounak Nandi, Chinmaya Ranjan Das, Lakshminarayana Rao","doi":"10.1007/s11090-025-10545-4","DOIUrl":"10.1007/s11090-025-10545-4","url":null,"abstract":"<div><p>This study presents the development of an equivalent electrical circuit model using MATLAB/Simulink to simulate the discharge behaviour of a coaxial cylindrical dielectric barrier discharge (DBD) and explores the influence of the flow regime on its electrical characteristics. Validation of the experimental findings was performed using Simulink and Chemical Workbench (CWB). The simulations provided valuable insights into the DBD behaviour, facilitating its performance optimization. The equivalent circuit model demonstrated accurate predictions of peak current amplitude <span>((I_{peak} ))</span>, root mean square of total current <span>(left( { I_{rms } } right))</span>, and microfilament discharge resistance <span>(left( { R_{f } } right))</span>. The study unveiled a significant impact of the flow regime on the electrical properties of the DBD. As the flow rate (<i>Q</i>) transitioned from the laminar flow regime (Reynolds number, <i>Re</i> = 300) to the turbulent flow regime (Re = 4500), the peak current <span>((I_{peak} ))</span> exhibited an increase from 60 to 80 mA for Argon (Ar) and 90–140 mA for Nitrogen (N<sub>2</sub>) gas. Simultaneously, the <span>(R_{f })</span> decreased from 3.0 to 0.6 mΩ for Ar and 2.0 mΩ to 0.1 mΩ for N<sub>2</sub>. The effect of <i>Q</i> on discharge mode was analyzed using image analysis. In N<sub>2</sub>, the discharge remained more filamentary across a wider range of <i>Q</i> (from 5.8 to 31.5 SLPM) compared to Ar. Electron density (<i>n</i><sub><i>e</i></sub>) estimated from both experimental data and the CWB model, was found to be of the same order of magnitude. For both gases, an increase in <i>Q</i> led to a rise in <i>n</i><sub><i>e</i></sub> and a reduction in <span>(R_{f})</span>. Even at higher <i>Q</i>, the filamentary structure in N<sub>2</sub> was more persistent compared to Ar. The effect of <i>Q</i> on gas temperature (<span>(T_{g })</span>) was also studied, showing a decrease in <span>(T_{g })</span> for both Ar and N<sub>2</sub>, from 408 to 320 K for Ar and from 689 to 435 K for N<sub>2</sub>, corresponding to increased <i>Q</i> under identical conditions. The impact of the flow regime on <span>(R_{f })</span> was analyzed using the Peclet number (<i>Pe</i>) to gain a better understanding of heat/mass transport from the discharge to the surroundings. The MATLAB/Simulink and CWB models corroborated these findings, demonstrating excellent agreement with the experimental results. This validation underscores the reliability of the models in effectively characterizing the discharge parameters of the DBD.</p></div>","PeriodicalId":734,"journal":{"name":"Plasma Chemistry and Plasma Processing","volume":"45 3","pages":"795 - 828"},"PeriodicalIF":2.6,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143793120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-30DOI: 10.1007/s11090-025-10541-8
Nasser Ghaderi, Navid Hasheminejad, Ali Golmohammadi, Bart Ribbens, Joris Dirckx, Steve Vanlanduit
Cold atmospheric plasma (CAP) finds numerous applications across various sectors, including industry (e.g. surface modification) and medicine (e.g. tissue regeneration, wound healing, oncology, and dentistry). However, understanding the mechanical properties of materials undergoing CAP treatment is of great importance, particularly for applications involving changes in material properties. This study aims to utilize CAP as an excitation device for assessing the mechanical properties of a polymethyl methacrylate (PMMA) sample. CAP was employed to induce vibrations on a PMMA sample around its resonance frequency, and the resulting vibrations were measured by a scanning laser doppler vibrometer. The elastic modulus of the PMMA sample was then calculated based on the stress and strain profiles obtained from the measured vibrations. The obtained elastic modulus value of 4.87 GPa showed excellent agreement with the 4.83 GPa value obtained using other excitation devices, indicating the reliability of CAP in mechanical characterization. This study is the first step toward potential applications that can break new ground in the use of CAP in monitoring and characterization of mechanical properties during CAP treatment (e.g. surface treatment), paving the way for enhanced control and optimization of CAP-based processes in various applications.