We developed a Mach-Zehnder type electron interferometer (MZ-EI) that enables simultaneous observation of interferograms created at multiple output locations on a 1.2-MV field-emission transmission electron microscope. This MZ-EI is composed of two single-crystal thin films, a lens located between the single-crystal thin films and imaging lenses. By comparing interferograms created by electron waves travelling through different beam paths, we found that the relative phase difference was caused by phase modulation passing through the single crystals and by aberrations and defocus values of the lenses. We also confirmed that the relative phase difference can be controlled using the tilted illumination method.
{"title":"Simultaneous observation of multiple interferograms with Mach-Zehnder type electron interferometer on a 1.2-MV field-emission transmission electron microscope.","authors":"Tetsuya Akashi, Yoshio Takahashi, Ken Harada","doi":"10.1093/jmicro/dfae030","DOIUrl":"10.1093/jmicro/dfae030","url":null,"abstract":"<p><p>We developed a Mach-Zehnder type electron interferometer (MZ-EI) that enables simultaneous observation of interferograms created at multiple output locations on a 1.2-MV field-emission transmission electron microscope. This MZ-EI is composed of two single-crystal thin films, a lens located between the single-crystal thin films and imaging lenses. By comparing interferograms created by electron waves travelling through different beam paths, we found that the relative phase difference was caused by phase modulation passing through the single crystals and by aberrations and defocus values of the lenses. We also confirmed that the relative phase difference can be controlled using the tilted illumination method.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"63-70"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141473294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Scanning Transmission Electron Microscopy (STEM) enables direct determination of atomic arrangements in materials and devices. However, materials such as battery components are weak for electron beam irradiation, and low electron doses are required to prevent beam-induced damages. Noise removal is thus essential for precise structural analysis of electron-beam-sensitive materials at atomic resolution. Total square variation (TSV) regularization is an algorithm that exhibits high noise removal performance. However, the use of the TSV regularization term leads to significant image blurring and intensity reduction. To address these problems, we here propose a new approach adopting L2 norm regularization based on higher-order total variation. An atomic-resolution STEM image can be approximated as a set of smooth curves represented by quadratic functions. Since the third-degree derivative of any quadratic function is 0, total third-degree variation (TTDV) is suitable for a regularization term. The application of TTDV for denoising the atomic-resolution STEM image of CaF2 observed along the [001] zone axis is shown, where we can clearly see the Ca and F atomic columns without compromising image quality.
扫描透射电子显微镜(STEM)可直接测定材料和设备中的原子排列。然而,电池组件等材料对电子束辐照的耐受性较弱,需要较低的电子剂量以防止电子束引起的损坏。因此,要以原子分辨率对电子束敏感材料进行精确的结构分析,必须去除噪声。总平方变异(TSV)正则化是一种具有高去噪性能的算法。然而,使用 TSV 正则化项会导致图像严重模糊和强度降低。为了解决这些问题,我们在此提出了一种基于高阶总变化的 L2 规范正则化新方法。原子分辨率 STEM 图像可近似为一组由二次函数表示的平滑曲线。由于任何二次函数的三阶导数都是 0,因此总三阶变异(TTDV)适合作为正则化项。图中显示了应用 TTDV 对沿 [001] 区轴线观察到的 CaF2 原子分辨率 STEM 图像进行去噪的情况,在不影响图像质量的情况下,我们可以清楚地看到 Ca 和 F 原子列。
{"title":"Total third-degree variation for noise reduction in atomic-resolution STEM images.","authors":"Kazuaki Kawahara, Ryo Ishikawa, Shun Sasano, Naoya Shibata, Yuichi Ikuhara","doi":"10.1093/jmicro/dfae031","DOIUrl":"10.1093/jmicro/dfae031","url":null,"abstract":"<p><p>Scanning Transmission Electron Microscopy (STEM) enables direct determination of atomic arrangements in materials and devices. However, materials such as battery components are weak for electron beam irradiation, and low electron doses are required to prevent beam-induced damages. Noise removal is thus essential for precise structural analysis of electron-beam-sensitive materials at atomic resolution. Total square variation (TSV) regularization is an algorithm that exhibits high noise removal performance. However, the use of the TSV regularization term leads to significant image blurring and intensity reduction. To address these problems, we here propose a new approach adopting L2 norm regularization based on higher-order total variation. An atomic-resolution STEM image can be approximated as a set of smooth curves represented by quadratic functions. Since the third-degree derivative of any quadratic function is 0, total third-degree variation (TTDV) is suitable for a regularization term. The application of TTDV for denoising the atomic-resolution STEM image of CaF2 observed along the [001] zone axis is shown, where we can clearly see the Ca and F atomic columns without compromising image quality.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"1-9"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141494463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new configuration for near-field ptychography using a full-field illumination with a structured electron beam is proposed. A structured electron beam illuminating the entire field of view is scanned over the specimen, and a series of in-line holograms formed in the near-field region below the specimen are collected. The structured beam is generated by a conductive film with random openings, which ensures high stability and coherence of the beam. Observation in the near-field region reduces the beam concentration that occurs in the far-field region, which contributes to accurate recording of the beam intensity with a finite dynamic range of the detectors. The use of full-field illumination prevents the accumulation of errors caused by concatenating the local structures, which is the method used in conventional reconstruction. Since all holograms are obtained from the entire field of view, they have uniform multiplicity in terms of specimen information within the field of view. This contributes to robust and efficient reconstruction for a large field of view. The proposed method was tested using both simulated and experimental holograms. For the simulated holograms, the reconstruction of the specimen transmission function was achieved with an error less than 1/3485 of the wavelength. The method was further validated using experimental holograms obtained from MgO particles. The reconstructed phase transmission function of the specimen was consistent with the specimen structure and was equivalent to a mean inner potential of 13.53±0.16 V on the MgO particle, which is in close agreement with previously reported values.
{"title":"Near-field electron ptychography using full-field structured illumination.","authors":"Hirokazu Tamaki, Koh Saitoh","doi":"10.1093/jmicro/dfae035","DOIUrl":"10.1093/jmicro/dfae035","url":null,"abstract":"<p><p>A new configuration for near-field ptychography using a full-field illumination with a structured electron beam is proposed. A structured electron beam illuminating the entire field of view is scanned over the specimen, and a series of in-line holograms formed in the near-field region below the specimen are collected. The structured beam is generated by a conductive film with random openings, which ensures high stability and coherence of the beam. Observation in the near-field region reduces the beam concentration that occurs in the far-field region, which contributes to accurate recording of the beam intensity with a finite dynamic range of the detectors. The use of full-field illumination prevents the accumulation of errors caused by concatenating the local structures, which is the method used in conventional reconstruction. Since all holograms are obtained from the entire field of view, they have uniform multiplicity in terms of specimen information within the field of view. This contributes to robust and efficient reconstruction for a large field of view. The proposed method was tested using both simulated and experimental holograms. For the simulated holograms, the reconstruction of the specimen transmission function was achieved with an error less than 1/3485 of the wavelength. The method was further validated using experimental holograms obtained from MgO particles. The reconstructed phase transmission function of the specimen was consistent with the specimen structure and was equivalent to a mean inner potential of 13.53±0.16 V on the MgO particle, which is in close agreement with previously reported values.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"10-19"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11781274/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141763146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The surface sensitivity of high-resolution secondary electron (SE) imaging is examined using twisted bilayers of MoS2 stacked at an angle of 30°. High-resolution SE images of the twisted bilayer MoS2 show a honeycomb structure composed of Mo and S atoms, elucidating the monolayer structure of MoS2. Simultaneously captured annular dark-field scanning transmission electron microscope images from the same region show the projected structure of the two layers. That is, the SE images from the bilayer MoS2 selectively visualize the surface monolayer. It is noted that the SE yields from the surface monolayer are approximately three times higher than those from the second monolayer, likely attributable to attenuation when SEs emitted from the second layer traverse the surface layer. The surface sensitivity of high-resolution SE imaging is examined using twisted bilayers of MoS2 stacked at an angle of 30°. It was found that the SE images of the MoS2 bilayer visualize the surface monolayer approximately three times more intensely than the second monolayer.
利用以 30 度角堆叠的扭曲双层 MoS2,研究了高分辨率二次电子(SE)成像的表面灵敏度。扭曲双层 MoS2 的高分辨率 SE 图像显示了由 Mo 原子和 S 原子组成的蜂巢结构,从而阐明了 MoS2 的单层结构。从同一区域同时拍摄的环形暗场扫描透射电子显微镜图像显示了两层的投影结构。也就是说,双层 MoS2 的 SE 图像可选择性地观察到表面单层。值得注意的是,来自表面单层的 SE 产率大约是来自第二单层的 SE 产率的 3 倍,这可能是由于从第二层发射的 SE 穿过表面层时产生了衰减。小摘要:本研究利用由表层和基底组成的最薄系统--MoS2 双层膜,对原子分辨率二次电子成像的表面灵敏度进行了研究。研究发现,二次电子对表面单层原子排列的观察强度是第二层的三倍。
{"title":"Surface sensitivity of atomic-resolution secondary electron imaging.","authors":"Koh Saitoh, Teppei Oyobe, Keisuke Igarashi, Takeshi Sato, Hiroaki Matsumoto, Hiromi Inada, Takahiko Endo, Yasumitsu Miyata, Rei Usami, Taishi Takenobu","doi":"10.1093/jmicro/dfae041","DOIUrl":"10.1093/jmicro/dfae041","url":null,"abstract":"<p><p>The surface sensitivity of high-resolution secondary electron (SE) imaging is examined using twisted bilayers of MoS2 stacked at an angle of 30°. High-resolution SE images of the twisted bilayer MoS2 show a honeycomb structure composed of Mo and S atoms, elucidating the monolayer structure of MoS2. Simultaneously captured annular dark-field scanning transmission electron microscope images from the same region show the projected structure of the two layers. That is, the SE images from the bilayer MoS2 selectively visualize the surface monolayer. It is noted that the SE yields from the surface monolayer are approximately three times higher than those from the second monolayer, likely attributable to attenuation when SEs emitted from the second layer traverse the surface layer. The surface sensitivity of high-resolution SE imaging is examined using twisted bilayers of MoS2 stacked at an angle of 30°. It was found that the SE images of the MoS2 bilayer visualize the surface monolayer approximately three times more intensely than the second monolayer.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"28-34"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11781273/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142302784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, we experimentally analyzed the charging phenomenon when an insulating resist film on a conductive layer formed on bulk glass is irradiated by electron beams (EBs). To quantify the charging potential induced, an electrostatic force microscope device was installed in the scanning electron microscope sample chamber, and potential distributions formed under various exposure conditions were obtained. Based on the results obtained, a model for charge accumulation within the sample, explaining positive and negative charging and their transitions, was developed. At an EB acceleration voltage of 30 kV, the following observations were made: 'global charging' could be avoided by applying -5 V to the sample. Regarding 'local charging' near the exposure area of the EB, at low exposure doses, emission of secondary electrons from the sample surface induced positive charging, while the accumulation of incident electrons within the sample induced negative charging. At exposure doses where the effects of both are balanced, the sample exhibited zero potential, revealing the appearance of the 'first zero-cross exposure dose'. At higher exposure doses, the sample transitions from negative to positive as the exposure dose increases due to the electron-beam-induced conduction, resulting in the so-called second zero-cross exposure dose. The exposure dose dependence of the charging potential distribution at various acceleration voltages was obtained. In particular, we found that at an acceleration voltage of 0.6 kV, the sample surface is not charged even when exposed to small to very large doses of EBs.
{"title":"Surface potential distribution of resist exposed by electron beam and the non-charging exposure conditions.","authors":"Masatoshi Kotera, Yoshinobu Kono","doi":"10.1093/jmicro/dfae044","DOIUrl":"10.1093/jmicro/dfae044","url":null,"abstract":"<p><p>In this study, we experimentally analyzed the charging phenomenon when an insulating resist film on a conductive layer formed on bulk glass is irradiated by electron beams (EBs). To quantify the charging potential induced, an electrostatic force microscope device was installed in the scanning electron microscope sample chamber, and potential distributions formed under various exposure conditions were obtained. Based on the results obtained, a model for charge accumulation within the sample, explaining positive and negative charging and their transitions, was developed. At an EB acceleration voltage of 30 kV, the following observations were made: 'global charging' could be avoided by applying -5 V to the sample. Regarding 'local charging' near the exposure area of the EB, at low exposure doses, emission of secondary electrons from the sample surface induced positive charging, while the accumulation of incident electrons within the sample induced negative charging. At exposure doses where the effects of both are balanced, the sample exhibited zero potential, revealing the appearance of the 'first zero-cross exposure dose'. At higher exposure doses, the sample transitions from negative to positive as the exposure dose increases due to the electron-beam-induced conduction, resulting in the so-called second zero-cross exposure dose. The exposure dose dependence of the charging potential distribution at various acceleration voltages was obtained. In particular, we found that at an acceleration voltage of 0.6 kV, the sample surface is not charged even when exposed to small to very large doses of EBs.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"35-47"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142302783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heteroepitaxial interfaces are important because they determine the performance of devices such that career mobility is sensitive to the distribution of roughness, strain and composition at the interface. High-angle annular dark field imaging in scanning transmission electron microscopy has been utilized to capture them at an atomic scale. For precise identification of atomic column positions, a technique has been proposed to average multiple image frames taken at a high scanning rate by their positional alignment for increasing signal-to-noise ratio. However, the positional alignment between frames is sometimes incorrectly estimated because of the almost perfect periodic structure at the interfaces. Here, we developed an approach for precise positional alignment, where the images are first aligned by two consecutive images and then are aligned more precisely against the integrated image of the first alignment. We demonstrated our method by applying it to the heterointerface of Si0.8Ge0.2 (Si: silicon, Ge: germanium) epitaxial thin films on a Si substrate.
{"title":"Precise positional alignment of atom-resolved HAADF images of heteroepitaxial interface with low signal-to-noise ratio.","authors":"Kohei Aso, Yoshifumi Oshima","doi":"10.1093/jmicro/dfae038","DOIUrl":"10.1093/jmicro/dfae038","url":null,"abstract":"<p><p>Heteroepitaxial interfaces are important because they determine the performance of devices such that career mobility is sensitive to the distribution of roughness, strain and composition at the interface. High-angle annular dark field imaging in scanning transmission electron microscopy has been utilized to capture them at an atomic scale. For precise identification of atomic column positions, a technique has been proposed to average multiple image frames taken at a high scanning rate by their positional alignment for increasing signal-to-noise ratio. However, the positional alignment between frames is sometimes incorrectly estimated because of the almost perfect periodic structure at the interfaces. Here, we developed an approach for precise positional alignment, where the images are first aligned by two consecutive images and then are aligned more precisely against the integrated image of the first alignment. We demonstrated our method by applying it to the heterointerface of Si0.8Ge0.2 (Si: silicon, Ge: germanium) epitaxial thin films on a Si substrate.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"57-62"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142134663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have demonstrated localized surface plasmon (LSP)-enhanced cathodoluminescence (CL) from an atomic layer deposition-grown Al2O3/ZnO/Al2O3 heterostructure to develop a bright nanometer-scale light source for an electron beam excitation-assisted optical microscope. Three types of metals, Ag, Al and Au, were compared, and an 181-fold enhancement of CL emission was achieved with Ag nanoparticles, with the plasmon resonance wavelength close to the emission wavelength energy of ZnO. The enhanced emission is plausibly attributed to LSP/exciton coupling. However, it is also attributed to an increase in coupling efficiency with penetration depth and also to an increase in light extraction efficiency by grading the refractive indices at the heterostructure.
{"title":"Development of a localized surface plasmon-enhanced electron beam-pumped nanoscale light source for electron beam excitation-assisted optical microscopy.","authors":"Atsushi Nakamura, Shunpei Shiba, Kei Hosomi, Atsushi Ono, Yoshimasa Kawata, Wataru Inami","doi":"10.1093/jmicro/dfae043","DOIUrl":"10.1093/jmicro/dfae043","url":null,"abstract":"<p><p>We have demonstrated localized surface plasmon (LSP)-enhanced cathodoluminescence (CL) from an atomic layer deposition-grown Al2O3/ZnO/Al2O3 heterostructure to develop a bright nanometer-scale light source for an electron beam excitation-assisted optical microscope. Three types of metals, Ag, Al and Au, were compared, and an 181-fold enhancement of CL emission was achieved with Ag nanoparticles, with the plasmon resonance wavelength close to the emission wavelength energy of ZnO. The enhanced emission is plausibly attributed to LSP/exciton coupling. However, it is also attributed to an increase in coupling efficiency with penetration depth and also to an increase in light extraction efficiency by grading the refractive indices at the heterostructure.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"71-77"},"PeriodicalIF":0.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142302782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigate a one-dimensional plasmonic crystal using momentum-resolved electron energy-loss spectroscopy (EELS) and cathodoluminescence (CL) techniques, which are complementary in terms of available optical information. The plasmonic crystal sample is fabricated from large aluminum grains through the focused ion beam method. This approach allows curving nanostructures with high crystallinity, providing platforms for detailed analysis of plasmonic nanostructures using both EELS and CL. The momentum-resolved EELS visualizes dispersion curves outside the light cone, confirming the existence of the surface plasmon polaritons and local modes, while the momentum-resolved CL mapping analysis identified these surface plasmon polaritons and local modes. Such synergetic approach of two electron-beam techniques offers full insights into both radiative and non-radiative optical properties in plasmonic or photonic structures.
{"title":"Momentum-resolved EELS and CL study on 1D-plasmonic crystal prepared by FIB method.","authors":"Akira Yasuhara, Masateru Shibata, Wakaba Yamamoto, Izzah Machfuudzoh, Sotatsu Yanagimoto, Takumi Sannomiya","doi":"10.1093/jmicro/dfae022","DOIUrl":"10.1093/jmicro/dfae022","url":null,"abstract":"<p><p>We investigate a one-dimensional plasmonic crystal using momentum-resolved electron energy-loss spectroscopy (EELS) and cathodoluminescence (CL) techniques, which are complementary in terms of available optical information. The plasmonic crystal sample is fabricated from large aluminum grains through the focused ion beam method. This approach allows curving nanostructures with high crystallinity, providing platforms for detailed analysis of plasmonic nanostructures using both EELS and CL. The momentum-resolved EELS visualizes dispersion curves outside the light cone, confirming the existence of the surface plasmon polaritons and local modes, while the momentum-resolved CL mapping analysis identified these surface plasmon polaritons and local modes. Such synergetic approach of two electron-beam techniques offers full insights into both radiative and non-radiative optical properties in plasmonic or photonic structures.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"473-480"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11630248/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140869168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cell membrane structures are supramolecular complexes that require the ordered assembly of membrane proteins and lipids. The morphology of various cell adhesion structures in multicellular organisms, such as those between epithelial cells, neural synapses and immune synapses, was initially described through electron microscopic analyses. Subsequent studies aimed to catalog their constituent proteins, which encompass transmembrane cell adhesion molecules, cytoskeletal proteins and scaffolding proteins that bind the two components. However, the diversity of plasma membrane lipids and their significance in the organization of cell adhesion structures were underappreciated until recently. It is now understood that phase separation of lipids and liquid-liquid phase separation of proteins are important driving forces for such self-assembly. In this review, we summarized recent findings on the role of lipids as scaffolds for supramolecular complexes using tight junctions in epithelial cells as an example.
{"title":"Role of lipids in the organization of tight junction.","authors":"Junichi Ikenouchi, Kenta Shigetomi","doi":"10.1093/jmicro/dfae039","DOIUrl":"10.1093/jmicro/dfae039","url":null,"abstract":"<p><p>Cell membrane structures are supramolecular complexes that require the ordered assembly of membrane proteins and lipids. The morphology of various cell adhesion structures in multicellular organisms, such as those between epithelial cells, neural synapses and immune synapses, was initially described through electron microscopic analyses. Subsequent studies aimed to catalog their constituent proteins, which encompass transmembrane cell adhesion molecules, cytoskeletal proteins and scaffolding proteins that bind the two components. However, the diversity of plasma membrane lipids and their significance in the organization of cell adhesion structures were underappreciated until recently. It is now understood that phase separation of lipids and liquid-liquid phase separation of proteins are important driving forces for such self-assembly. In this review, we summarized recent findings on the role of lipids as scaffolds for supramolecular complexes using tight junctions in epithelial cells as an example.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"457-462"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142057513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bacterial spores, known for their complex and resilient structures, have been the focus of visualization using various methodologies. In this study, we applied quick-freeze and replica electron microscopy techniques, allowing observation of Bacillus subtilis spores in high-contrast and three-dimensional detail. This method facilitated visualization of the spore structure with enhanced resolution and provided new insights into the spores and their germination processes. We identified and described five distinct structures: (i) hair-like structures on the spore surface, (ii) spike formation on the surface of lysozyme-treated spores, (iii) the fractured appearance of the spore cortex during germination, (iv) potential connections between small vesicles and the core membrane and (v) the evolving surface structure of nascent vegetative cells during germination.
{"title":"Visualization of Bacillus subtilis spore structure and germination using quick-freeze deep-etch electron microscopy.","authors":"Kiran Jalil, Yuhei O Tahara, Makoto Miyata","doi":"10.1093/jmicro/dfae023","DOIUrl":"10.1093/jmicro/dfae023","url":null,"abstract":"<p><p>Bacterial spores, known for their complex and resilient structures, have been the focus of visualization using various methodologies. In this study, we applied quick-freeze and replica electron microscopy techniques, allowing observation of Bacillus subtilis spores in high-contrast and three-dimensional detail. This method facilitated visualization of the spore structure with enhanced resolution and provided new insights into the spores and their germination processes. We identified and described five distinct structures: (i) hair-like structures on the spore surface, (ii) spike formation on the surface of lysozyme-treated spores, (iii) the fractured appearance of the spore cortex during germination, (iv) potential connections between small vesicles and the core membrane and (v) the evolving surface structure of nascent vegetative cells during germination.</p>","PeriodicalId":74193,"journal":{"name":"Microscopy (Oxford, England)","volume":" ","pages":"463-472"},"PeriodicalIF":0.0,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11630275/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141180766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}