首页 > 最新文献

Silicon最新文献

英文 中文
Analytical solutions of photothermal wave in semiconductor materials 半导体材料中光热波的解析解
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-13 DOI: 10.1007/s12633-024-03048-y
Zuhur Alqahtani, Ibrahim Abbas, Alaa A. El-Bary, Areej Almuneef

In the present study, a theoretical model that interconnects plasma waves, thermal dynamics, and elastic vibrations has been applied to examine the propagations of waves in semiconductors as a result of photo-thermal effects. A study was conducted on a semiconducting material that is both isotropic and elastic, displaying uniform thermoelastic properties. This research looked into how plasma, thermal, and elastic waves, which are produced by a sharply focused laser beams with modulated intensity, interact within the material. Using Laplace transform methods, the analytical solutions obtained through the eigenvalues approach in the transformed domains were observed. To do the numerical calculations, a semiconductor resembling silicon was used.

在本研究中,应用了一个将等离子体波、热动力学和弹性振动相互联系的理论模型,来研究光热效应导致的波在半导体中的传播。研究对象是一种具有各向同性和弹性的半导体材料,它具有均匀的热弹性特性。这项研究探讨了等离子波、热波和弹性波是如何在材料内部相互作用的,等离子波、热波和弹性波是由具有调制强度的急剧聚焦激光束产生的。使用拉普拉斯变换方法,观察了在变换域中通过特征值方法获得的分析解。为了进行数值计算,使用了一种类似硅的半导体。
{"title":"Analytical solutions of photothermal wave in semiconductor materials","authors":"Zuhur Alqahtani,&nbsp;Ibrahim Abbas,&nbsp;Alaa A. El-Bary,&nbsp;Areej Almuneef","doi":"10.1007/s12633-024-03048-y","DOIUrl":"10.1007/s12633-024-03048-y","url":null,"abstract":"<div><p>In the present study, a theoretical model that interconnects plasma waves, thermal dynamics, and elastic vibrations has been applied to examine the propagations of waves in semiconductors as a result of photo-thermal effects. A study was conducted on a semiconducting material that is both isotropic and elastic, displaying uniform thermoelastic properties. This research looked into how plasma, thermal, and elastic waves, which are produced by a sharply focused laser beams with modulated intensity, interact within the material. Using Laplace transform methods, the analytical solutions obtained through the eigenvalues approach in the transformed domains were observed. To do the numerical calculations, a semiconductor resembling silicon was used.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5355 - 5365"},"PeriodicalIF":2.8,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03048-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141615054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study 提高 4-T 双面双层珍珠岩/珍珠硅串联太阳能电池的效率:工艺和器件 TCAD 仿真研究
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-13 DOI: 10.1007/s12633-024-03076-8
H. A. El-Demsisy, Ahmed Shaker, M. D. Asham, Ibrahim S. Ahmed, Tarek M. Abdolkader

Perovskite/Silicon tandem solar cells have earned substantial attention in the field of photovoltaics (PVs) due to their potential high-efficiency energy conversion. The provided TCAD simulation in the current work aims at delivering a novel design for a 4-T Perovskite/PERL p-type Si tandem solar cell. The main structure consists of ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW as the top cell and a conventional PERL p-Si as the bottom cell. Simulation results showed that the proposed top cell structure achieves a significant performance after substituting Zn(O0.3,S0.7) for AZO and PC60PM electron transport layers (ETLs), while replacing CuSCN with CuI as a suitable alternative for the hole transport layer (HTL). These modifications achieved an efficiency of 19.81% for the top cell. The bottom cell also attained a noteworthy level of performance by using bifacial dual-side-textured construction with efficiencies reaching 29.11% and 14.08% for bare and filtered cells, respectively. With these combined modifications, the PCE (power conversion efficiency) reached 33.89%, showing significant improvement compared to the base structure.

由于具有潜在的高效率能量转换能力,光伏(PV)领域中的珍珠光泽石/硅串联太阳能电池备受关注。本研究提供的 TCAD 仿真旨在为 4-T Perovskite/PERL p 型硅串联太阳能电池提供一种新颖的设计。主要结构包括作为顶部电池的 ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW 和作为底部电池的传统 PERL p 型硅。仿真结果表明,在用 Zn(O0.3,S0.7) 替代 AZO 和 PC60PM 电子传输层(ETL),同时用 CuI 替代 CuSCN 作为空穴传输层(HTL)的合适替代品之后,拟议的顶部电池结构实现了显著的性能。这些改进使顶部电池的效率达到了 19.81%。通过使用双面双侧纹理结构,底部电池的性能也达到了值得注意的水平,裸电池和过滤电池的效率分别达到了 29.11% 和 14.08%。通过这些综合改进,PCE(功率转换效率)达到了 33.89%,与基本结构相比有了显著提高。
{"title":"Efficiency Boosting of 4-T Bifacial Dual-Textured Perovskite/Perl Silicon Tandem Solar Cells: Process and Device TCAD Simulation Study","authors":"H. A. El-Demsisy,&nbsp;Ahmed Shaker,&nbsp;M. D. Asham,&nbsp;Ibrahim S. Ahmed,&nbsp;Tarek M. Abdolkader","doi":"10.1007/s12633-024-03076-8","DOIUrl":"10.1007/s12633-024-03076-8","url":null,"abstract":"<div><p>Perovskite/Silicon tandem solar cells have earned substantial attention in the field of photovoltaics (PVs) due to their potential high-efficiency energy conversion. The provided TCAD simulation in the current work aims at delivering a novel design for a 4-T Perovskite/PERL p-type Si tandem solar cell. The main structure consists of ITO/CuSCN/Perovskite/PC60PM/AZO/AgNW as the top cell and a conventional PERL p-Si as the bottom cell. Simulation results showed that the proposed top cell structure achieves a significant performance after substituting Zn(O<sub>0.3</sub>,S<sub>0.7</sub>) for AZO and PC60PM electron transport layers (ETLs), while replacing CuSCN with CuI as a suitable alternative for the hole transport layer (HTL). These modifications achieved an efficiency of 19.81% for the top cell. The bottom cell also attained a noteworthy level of performance by using bifacial dual-side-textured construction with efficiencies reaching 29.11% and 14.08% for bare and filtered cells, respectively. With these combined modifications, the PCE (power conversion efficiency) reached 33.89%, showing significant improvement compared to the base structure.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5337 - 5353"},"PeriodicalIF":2.8,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of B2O3 on the Physical and Mechanical Properties of Calcium Fluoroaluminosilicate Glass System B2O3 对氟铝硅酸钙玻璃体系物理和机械特性的影响
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-10 DOI: 10.1007/s12633-024-03072-y
Abdelkader Mohammed Efa, Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, Che Azurahanim Che Abdullah, Norhazlin Zainuddin, Mohd Zul Hilmi Mayzan, Shahira Liza Kamis

Bioactive glasses containing boron oxide have attracted substantial attention owing to their unique attributes and the promising prospects they offer for biomedical uses. The study explores boro calcium fluoro alumino silicate (BCFAS) glass containing boron oxide, highlighting its potential in biomedical applications. The glass was synthesized through melt-water quenching with varying B2O3 ratios, utilizing CaO from clam shell and SiO2 from soda lime silica glass waste. The investigation examined the physical and mechanical properties of the resulting samples. Results showed that increasing B2O3 content caused a reduction in crystallinity, as confirmed by XRD analysis. The incorporation of B2O3 into the glass structure was further supported by the emergence of B‒O‒B and Si‒O‒B bonds observed in FTIR spectroscopy, which may potentially influence the glass's dissolution and degradation characteristics. However, higher B2O3 content also reduced density, impacting the mechanical properties. Vickers microhardness and compressive strength decreased due to the introduction of the BO3 unit, which increased the fragility of the glass. While enhancing glass-like behavior and potentially increasing bioactivity, the addition of B2O3 adversely affected its mechanical attributes.

含氧化硼的生物活性玻璃因其独特的属性和在生物医学应用方面的广阔前景而备受关注。本研究探讨了含氧化硼的氟铝硅酸钙(BCFAS)玻璃,突出了其在生物医学应用方面的潜力。这种玻璃是利用蚌壳中的 CaO 和钠钙硅玻璃废料中的 SiO2,通过不同 B2O3 比例的熔水淬火法合成的。研究考察了所得样品的物理和机械性能。结果表明,B2O3 含量的增加会导致结晶度的降低,XRD 分析证实了这一点。傅立叶变换红外光谱中观察到的 B-O-B 和 Si-O-B 键的出现进一步证实了 B2O3 在玻璃结构中的加入,这可能会影响玻璃的溶解和降解特性。然而,较高的 B2O3 含量也会降低密度,从而影响机械性能。由于引入了 BO3 单元,维氏硬度和抗压强度都有所下降,从而增加了玻璃的脆性。虽然 B2O3 的添加增强了玻璃样行为并可能提高生物活性,但却对其机械属性产生了不利影响。
{"title":"Effect of B2O3 on the Physical and Mechanical Properties of Calcium Fluoroaluminosilicate Glass System","authors":"Abdelkader Mohammed Efa,&nbsp;Khamirul Amin Matori,&nbsp;Mohd Hafiz Mohd Zaid,&nbsp;Che Azurahanim Che Abdullah,&nbsp;Norhazlin Zainuddin,&nbsp;Mohd Zul Hilmi Mayzan,&nbsp;Shahira Liza Kamis","doi":"10.1007/s12633-024-03072-y","DOIUrl":"10.1007/s12633-024-03072-y","url":null,"abstract":"<div><p>Bioactive glasses containing boron oxide have attracted substantial attention owing to their unique attributes and the promising prospects they offer for biomedical uses. The study explores boro calcium fluoro alumino silicate (BCFAS) glass containing boron oxide, highlighting its potential in biomedical applications. The glass was synthesized through melt-water quenching with varying B<sub>2</sub>O<sub>3</sub> ratios, utilizing CaO from clam shell and SiO<sub>2</sub> from soda lime silica glass waste. The investigation examined the physical and mechanical properties of the resulting samples. Results showed that increasing B<sub>2</sub>O<sub>3</sub> content caused a reduction in crystallinity, as confirmed by XRD analysis. The incorporation of B<sub>2</sub>O<sub>3</sub> into the glass structure was further supported by the emergence of B‒O‒B and Si‒O‒B bonds observed in FTIR spectroscopy, which may potentially influence the glass's dissolution and degradation characteristics. However, higher B<sub>2</sub>O<sub>3</sub> content also reduced density, impacting the mechanical properties. Vickers microhardness and compressive strength decreased due to the introduction of the BO<sub>3</sub> unit, which increased the fragility of the glass. While enhancing glass-like behavior and potentially increasing bioactivity, the addition of B<sub>2</sub>O<sub>3</sub> adversely affected its mechanical attributes.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5327 - 5336"},"PeriodicalIF":2.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements 硅纳米壁的微观结构分析:正电子束多普勒展宽测量的启示
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-08 DOI: 10.1007/s12633-024-03075-9
C. Lakshmanan, R. N. Viswanath, Anil K. Behera, P. K. Ajikumar, R. Rajaraman

Silicon nanowalls atop the (100) – oriented boron doped P-type (1–10 Ω-cm) single crystalline silicon wafers were prepared using a metal assisted chemical etching route for different durations 1, 5, 15, and 30 min. The scanning electron microscopy results revealed that the structure evolved up on etching is in the form of vertical silicon nanowalls with mean wall thickness of 70 nm. It can be observed that as the etching time increases, the height of the SiNWs increases linearly at an etching rate of ~ 301 nm per minute. The transmission electron microscopy results combined with FTIR spectroscopy results indicate that about one nanometer thick Si–O-Si- bonded amorphous layer formed at the surface of the grown silicon nanowalls. A defect sensitive Variable energy positron beam Doppler broadening technique used to study the etched silicon wafers confirms that the defect structures that are evolved in the silicon nanowalls with etching are different from that of planar Silicon. Analysis of the Doppler broadened line-shape profiles shows that the effective positron diffusion length and height of the silicon nanowalls are related logarithmically with a scaling exponent of—1/2, indicating that the implanted positrons that are thermalized in the silicon nanowalls diffuse back to the wall surfaces and are annihilated at the defects linked (Si–O-Si)/Si interface region. The present positron experimental results abound with literature reports suggest that understanding the microstructure of the surface layer in SiNWs is significantly important in determining their performance for producing efficient solar cells.

采用金属辅助化学蚀刻方法,分别在 1、5、15 和 30 分钟内,在掺硼 P 型(1-10 Ω-cm)单晶硅片的 (100) - 取向上制备了硅纳米墙。扫描电子显微镜结果显示,蚀刻后形成的结构为垂直硅纳米壁,平均壁厚为 70 纳米。可以观察到,随着蚀刻时间的增加,硅纳米瓦的高度以每分钟约 301 纳米的蚀刻速率线性增加。透射电子显微镜结果和傅立叶变换红外光谱结果表明,在生长的硅纳米壁表面形成了约一纳米厚的硅-O-硅键合非晶层。利用对缺陷敏感的可变能量正电子束多普勒展宽技术来研究蚀刻硅晶片,证实了硅纳米壁在蚀刻过程中形成的缺陷结构不同于平面硅的缺陷结构。对多普勒展宽线形剖面的分析表明,硅纳米壁的有效正电子扩散长度和高度呈对数关系,比例指数为 1/2,这表明在硅纳米壁中受热的植入正电子会扩散回壁表面,并在与缺陷相连的(Si-O-Si)/硅界面区域湮灭。本正电子实验结果与大量文献报道表明,了解硅纳米瓦表面层的微观结构对决定其生产高效太阳能电池的性能非常重要。
{"title":"Microstructure Analysis of Silicon Nanowalls: Insights from Positron Beam Doppler Broadening Measurements","authors":"C. Lakshmanan,&nbsp;R. N. Viswanath,&nbsp;Anil K. Behera,&nbsp;P. K. Ajikumar,&nbsp;R. Rajaraman","doi":"10.1007/s12633-024-03075-9","DOIUrl":"10.1007/s12633-024-03075-9","url":null,"abstract":"<div><p>Silicon nanowalls atop the (100) – oriented boron doped P-type (1–10 Ω-cm) single crystalline silicon wafers were prepared using a metal assisted chemical etching route for different durations 1, 5, 15, and 30 min. The scanning electron microscopy results revealed that the structure evolved up on etching is in the form of vertical silicon nanowalls with mean wall thickness of 70 nm. It can be observed that as the etching time increases, the height of the SiNWs increases linearly at an etching rate of ~ 301 nm per minute. The transmission electron microscopy results combined with FTIR spectroscopy results indicate that about one nanometer thick Si–O-Si- bonded amorphous layer formed at the surface of the grown silicon nanowalls. A defect sensitive Variable energy positron beam Doppler broadening technique used to study the etched silicon wafers confirms that the defect structures that are evolved in the silicon nanowalls with etching are different from that of planar Silicon. Analysis of the Doppler broadened line-shape profiles shows that the effective positron diffusion length and height of the silicon nanowalls are related logarithmically with a scaling exponent of—1/2, indicating that the implanted positrons that are thermalized in the silicon nanowalls diffuse back to the wall surfaces and are annihilated at the defects linked (Si–O-Si)/Si interface region. The present positron experimental results abound with literature reports suggest that understanding the microstructure of the surface layer in SiNWs is significantly important in determining their performance for producing efficient solar cells.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5317 - 5325"},"PeriodicalIF":2.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Field and Moisture Diffusivity Effects on Photo-Elasto-Thermodiffusion Waves in Excited Semiconductor Materials 磁场和水分扩散率对受激半导体材料中光-电-热扩散波的影响
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03042-4
Tarek E. I. Nassar, Merfat H. Raddadi, Khaled Lotfy

In this article, a novel model was studied that explains the interaction between the equations governing the photo-thermoelasticity theory in the case of the presence of the diffusion of moisture of the semiconductor medium with the electromagnetic field. The photo-thermoelasticity theory is used to investigate the photothermal excitation process for an elastic semiconductor medium in a one-dimensional deformation. This article discusses the effect of the magnetic field on conductive moisture diffusivity. The coupling interactions between magneto-thermo-elastic stresses and moisture diffusivity are investigated. According to some initial conditions, the governing equations are investigated using the Laplace transform technique to calculate the numerical solution of the key physical field contribution in the Laplace domain. The basic quantities for the process in the Laplace domain are calculated using all mechanical stresses, thermal conditions, and plasma boundary surface conditions. To obtain complete solutions in the time domain for the main problems, the numerical method approach is used to invert the Laplace transform. Some comparisons are made under the influence of different parameters to show the wave propagation of the main fields.

本文研究了一个新模型,该模型解释了在存在半导体介质水分扩散与电磁场的情况下,制约光热弹性理论的方程之间的相互作用。光热弹性理论用于研究弹性半导体介质在一维变形中的光热激发过程。本文讨论了磁场对导电水分扩散率的影响。研究了磁热弹应力与湿气扩散率之间的耦合相互作用。根据一些初始条件,利用拉普拉斯变换技术研究了支配方程,计算了拉普拉斯域中关键物理场贡献的数值解。利用所有机械应力、热条件和等离子体边界表面条件计算拉普拉斯域中过程的基本量。为了获得主要问题在时域中的完整解,采用了数值方法来反演拉普拉斯变换。在不同参数的影响下进行了一些比较,以显示主要场的波传播情况。
{"title":"Magnetic Field and Moisture Diffusivity Effects on Photo-Elasto-Thermodiffusion Waves in Excited Semiconductor Materials","authors":"Tarek E. I. Nassar,&nbsp;Merfat H. Raddadi,&nbsp;Khaled Lotfy","doi":"10.1007/s12633-024-03042-4","DOIUrl":"10.1007/s12633-024-03042-4","url":null,"abstract":"<div><p>In this article, a novel model was studied that explains the interaction between the equations governing the photo-thermoelasticity theory in the case of the presence of the diffusion of moisture of the semiconductor medium with the electromagnetic field. The photo-thermoelasticity theory is used to investigate the photothermal excitation process for an elastic semiconductor medium in a one-dimensional deformation. This article discusses the effect of the magnetic field on conductive moisture diffusivity. The coupling interactions between magneto-thermo-elastic stresses and moisture diffusivity are investigated. According to some initial conditions, the governing equations are investigated using the Laplace transform technique to calculate the numerical solution of the key physical field contribution in the Laplace domain. The basic quantities for the process in the Laplace domain are calculated using all mechanical stresses, thermal conditions, and plasma boundary surface conditions. To obtain complete solutions in the time domain for the main problems, the numerical method approach is used to invert the Laplace transform. Some comparisons are made under the influence of different parameters to show the wave propagation of the main fields.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5301 - 5315"},"PeriodicalIF":2.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Mesoporous Silica Nanocomposite Supported Ionic Liquid/Cu as a Powerful and Highly Stable Catalyst for Chan-Lam Coupling Reaction 以离子液体/铜为支撑的磁性介孔二氧化硅纳米复合材料是用于 Chan-Lam 偶联反应的强力高稳定催化剂
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03082-w
Shiva Kargar, Dawood Elhamifar

Herein, a novel magnetic mesoporous silica nanocomposite with a core–shell structure modified with IL/Cu complex (MMS@IL/Cu) is prepared through the template-directed hydrolysis of tetramethyl orthosilicate (TMOS) over Fe3O4@RF composite followed by grafting of propyl-imidazolium chloride/copper complex. The MMS@IL/Cu nanocomposite was characterized by PXRD, FT-IR, TGA, VSM, EDX, SEM and TEM techniques. The MMS@IL/Cu was employed as a robust nanocatalyst to successfully promote the Chan-Lam coupling reaction in EtOH at 50 °C. High yields of the desired products were obtained within a relatively short time. The designed magnetic catalyst could retain its high efficiency for at least eight runs under applied conditions.

本文通过模板定向水解 Fe3O4@RF 复合材料上的原硅酸四甲酯 (TMOS),然后接枝丙基咪唑氯/铜复合物,制备了一种新型磁性介孔二氧化硅纳米复合材料(MMS@IL/Cu),该复合材料具有与 IL/Cu 复合物修饰的核壳结构。MMS@IL/Cu 纳米复合材料通过 PXRD、FT-IR、TGA、VSM、EDX、SEM 和 TEM 技术进行了表征。MMS@IL/Cu 被用作一种强效纳米催化剂,在 50 °C 的乙醇中成功促进了 Chan-Lam 偶联反应。在相对较短的时间内获得了高产率的所需产物。所设计的磁性催化剂在应用条件下至少可以保持高效率运行八次。
{"title":"Magnetic Mesoporous Silica Nanocomposite Supported Ionic Liquid/Cu as a Powerful and Highly Stable Catalyst for Chan-Lam Coupling Reaction","authors":"Shiva Kargar,&nbsp;Dawood Elhamifar","doi":"10.1007/s12633-024-03082-w","DOIUrl":"10.1007/s12633-024-03082-w","url":null,"abstract":"<div><p>Herein, a novel magnetic mesoporous silica nanocomposite with a core–shell structure modified with IL/Cu complex (MMS@IL/Cu) is prepared through the template-directed hydrolysis of tetramethyl orthosilicate (TMOS) over Fe<sub>3</sub>O<sub>4</sub>@RF composite followed by grafting of propyl-imidazolium chloride/copper complex. The MMS@IL/Cu nanocomposite was characterized by PXRD, FT-IR, TGA, VSM, EDX, SEM and TEM techniques. The MMS@IL/Cu was employed as a robust nanocatalyst to successfully promote the Chan-Lam coupling reaction in EtOH at 50 °C. High yields of the desired products were obtained within a relatively short time. The designed magnetic catalyst could retain its high efficiency for at least eight runs under applied conditions.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5285 - 5299"},"PeriodicalIF":2.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bredigite Bioceramic: A Promising Candidate for Bone Tissue Engineering Bredigite 生物陶瓷:骨组织工程的理想候选材料
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-05 DOI: 10.1007/s12633-024-03083-9
Mohammad Khodaei, Akram Nadi

Because of their desirable characteristics, ceramic-based scaffolds have emerged as prominent candidates for artificial bone replacements in bone regeneration procedures. Bredigite (Ca7MgSi4O16) ceramic has demonstrated favorable bioactivity, bone growth, and mechanical qualities, making it a viable candidate for replacing bone defects. This review presents the main techniques employed for the synthesis of bredigite. It was also mentioned how combining bredigite ceramic with other materials might increase the quality of composites. Because of the presence of magnesium in bredigite, it has higher mechanical properties and chemical stability than calcium silicates such as wollastonite, dicalcium silicate, and tricalcium silicate. The density and elastic modulus of bredigite is 3.4 gr/cm3 and 43 GPa, respectively. Higher mechanical properties of bredigite compared to polymers, and its biocompatibility, bioactivity, and osteoconductivity, can cause to higher quality of polymer-bredigite composite than that of polymer. Based on findings derived from many investigations conducted in in-vitro and in-vivo contexts, bredigite has great promise as a flexible and efficient material for bone tissue engineering. Additional research is needed to maximize the clinical applications of bredigite bioceramics.

陶瓷基支架因其理想的特性,已成为骨再生手术中人工骨替代物的主要候选材料。红柱石(Ca7MgSi4O16)陶瓷具有良好的生物活性、骨生长和机械性能,是替代骨缺损的可行候选材料。本综述介绍了合成红柱石的主要技术。此外,还提到了将红柱石陶瓷与其他材料结合可提高复合材料的质量。由于红柱石中含有镁,因此与硅灰石、硅酸二钙和硅酸三钙等硅酸钙相比,红柱石具有更高的机械性能和化学稳定性。红柱石的密度和弹性模量分别为 3.4 gr/cm3 和 43 GPa。与聚合物相比,红柱石具有更高的机械性能,其生物相容性、生物活性和骨传导性可使聚合物-红柱石复合材料的质量高于聚合物。根据在体外和体内进行的多项研究结果,红柱石作为一种灵活高效的骨组织工程材料大有可为。要想最大限度地提高红柱石生物陶瓷的临床应用价值,还需要进行更多的研究。
{"title":"Bredigite Bioceramic: A Promising Candidate for Bone Tissue Engineering","authors":"Mohammad Khodaei,&nbsp;Akram Nadi","doi":"10.1007/s12633-024-03083-9","DOIUrl":"10.1007/s12633-024-03083-9","url":null,"abstract":"<div><p>Because of their desirable characteristics, ceramic-based scaffolds have emerged as prominent candidates for artificial bone replacements in bone regeneration procedures. Bredigite (Ca<sub>7</sub>MgSi<sub>4</sub>O<sub>16</sub>) ceramic has demonstrated favorable bioactivity, bone growth, and mechanical qualities, making it a viable candidate for replacing bone defects. This review presents the main techniques employed for the synthesis of bredigite. It was also mentioned how combining bredigite ceramic with other materials might increase the quality of composites. Because of the presence of magnesium in bredigite, it has higher mechanical properties and chemical stability than calcium silicates such as wollastonite, dicalcium silicate, and tricalcium silicate. The density and elastic modulus of bredigite is 3.4 gr/cm3 and 43 GPa, respectively. Higher mechanical properties of bredigite compared to polymers, and its biocompatibility, bioactivity, and osteoconductivity, can cause to higher quality of polymer-bredigite composite than that of polymer. Based on findings derived from many investigations conducted in <i>in-vitro</i> and <i>in-vivo</i> contexts, bredigite has great promise as a flexible and efficient material for bone tissue engineering. Additional research is needed to maximize the clinical applications of bredigite bioceramics.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5213 - 5230"},"PeriodicalIF":2.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03083-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the Computation of Temperature Indices of Silicates, with Strong Potential to Predict the Boiling Point of Hydrocarbons 论硅酸盐温度指数的计算及其预测碳氢化合物沸点的强大潜力
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-04 DOI: 10.1007/s12633-024-03081-x
Jian Zhong Xu, Zaryab Hussain, Fairouz Tchier, Ferdous Tawfiq

The molecular graph of a chemical compound can be measured using a topological index, which helps us to understand its physical and chemical characteristics. Topological indices play a crucial role in characterizing the different chemical properties of substances, such as (SiO_{4}), within the field of chemical graph theory. (SiO_{4}) is an important compound owing to its versatility, accessibility, and quantifiability. In this study, we developed the methodology for calculating various temperature indices for a linear molecular graph of (SiO_{4}). We compare and find the correlation of temperature indices of silicate chain. In the last section of the paper, we present an application of benzenoid hydrocarbons to elucidate the significance of temperature indices.

使用拓扑指数可以测量化合物的分子图,这有助于我们了解其物理和化学特性。在化学图论领域,拓扑指数在表征物质(如 (SiO_{4}))的不同化学特性方面起着至关重要的作用。SiO_{4}/)是一种重要的化合物,因为它具有多功能性、易获取性和可量化性。在这项研究中,我们开发了计算 (SiO_{4}) 线性分子图的各种温度指数的方法。我们比较并发现了硅酸盐链温度指数的相关性。在论文的最后一部分,我们介绍了苯碳氢化合物的应用,以阐明温度指数的意义。
{"title":"On the Computation of Temperature Indices of Silicates, with Strong Potential to Predict the Boiling Point of Hydrocarbons","authors":"Jian Zhong Xu,&nbsp;Zaryab Hussain,&nbsp;Fairouz Tchier,&nbsp;Ferdous Tawfiq","doi":"10.1007/s12633-024-03081-x","DOIUrl":"10.1007/s12633-024-03081-x","url":null,"abstract":"<div><p>The molecular graph of a chemical compound can be measured using a topological index, which helps us to understand its physical and chemical characteristics. Topological indices play a crucial role in characterizing the different chemical properties of substances, such as <span>(SiO_{4})</span>, within the field of chemical graph theory. <span>(SiO_{4})</span> is an important compound owing to its versatility, accessibility, and quantifiability. In this study, we developed the methodology for calculating various temperature indices for a linear molecular graph of <span>(SiO_{4})</span>. We compare and find the correlation of temperature indices of silicate chain. In the last section of the paper, we present an application of benzenoid hydrocarbons to elucidate the significance of temperature indices.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5273 - 5283"},"PeriodicalIF":2.8,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the Purification Mechanism of Low-Grade Silicon Ore through a Combination of Direct Roasting and Pressure Leaching 直接焙烧和压力浸出相结合的低品位硅矿提纯机制研究
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-03 DOI: 10.1007/s12633-024-03080-y
Junyu Qu, Zhengjie Chen, Dandan Wu, Wenhui Ma

Impurities in low-grade silicon ore, particularly iron and aluminum, can significantly influence the quality of subsequent products. Therefore, it is vital to eliminate these impurities to improve the purity of low-grade silicon ore. This study introduces a method for removing iron and aluminum impurities from silicon ore. The silicon ore samples were analyzed through X-ray diffraction, scanning electron microscopy, and potential-pH diagram. The results confirmed that after direct roasting, the quartz crystal transformed from α-quartz to β quartz, causing an increase in quartz volume. After quenching, cracks and pits formed on the quartz surface, facilitating the diffusion and oxidation of impurities. Subsequent pressure leaching enabled the leaching agent to effectively penetrate the quartz interior, thereby removing impurities from the quartz sand. The experimental results revealed that the optimal conditions for removing impurities through direct roasting and quenching involved using a mixed acid solution containing 3% hydrochloric acid and 6 g/L oxalic acid. The leaching process was conducted at a temperature of 200 ℃ for 4 h in a reactor. Under these conditions, the silicon ore exhibited residual Fe and Al contents of 85 and 320ppmw, respectively, achieving the highest removal rates of 97.98% and 97.85%, the SiO2 content in silicon ore increased from 94.08% to 99.42%. Compared with leaching under atmospheric pressure leaching, pressure leaching resulted in a 30% increase in the removal rate of impurities. This study provides valuable practical guidance for purifying low-grade silicon ore used in silicon smelting raw materials.

低品位硅矿石中的杂质,尤其是铁和铝,会严重影响后续产品的质量。因此,去除这些杂质对提高低品位硅矿的纯度至关重要。本研究介绍了一种去除硅矿石中铁和铝杂质的方法。通过 X 射线衍射、扫描电子显微镜和电位-pH 图分析了硅矿样品。结果证实,直接焙烧后,石英晶体从 α- 石英转变为 β 石英,导致石英体积增大。淬火后,石英表面形成裂缝和凹坑,促进了杂质的扩散和氧化。随后的压力浸出可使浸出剂有效渗入石英内部,从而去除石英砂中的杂质。实验结果表明,通过直接焙烧和淬火去除杂质的最佳条件是使用含有 3% 盐酸和 6 g/L 草酸的混合酸溶液。浸出过程在温度为 200 ℃ 的反应器中进行 4 小时。在此条件下,硅矿的残余铁和铝含量分别为 85ppmw 和 320ppmw,最高去除率分别达到 97.98% 和 97.85%,硅矿中的 SiO2 含量从 94.08% 提高到 99.42%。与常压浸出相比,压力浸出的杂质去除率提高了 30%。这项研究为提纯硅冶炼原料中的低品位硅矿提供了宝贵的实践指导。
{"title":"Study on the Purification Mechanism of Low-Grade Silicon Ore through a Combination of Direct Roasting and Pressure Leaching","authors":"Junyu Qu,&nbsp;Zhengjie Chen,&nbsp;Dandan Wu,&nbsp;Wenhui Ma","doi":"10.1007/s12633-024-03080-y","DOIUrl":"10.1007/s12633-024-03080-y","url":null,"abstract":"<div><p>Impurities in low-grade silicon ore, particularly iron and aluminum, can significantly influence the quality of subsequent products. Therefore, it is vital to eliminate these impurities to improve the purity of low-grade silicon ore. This study introduces a method for removing iron and aluminum impurities from silicon ore. The silicon ore samples were analyzed through X-ray diffraction, scanning electron microscopy, and potential-pH diagram. The results confirmed that after direct roasting, the quartz crystal transformed from α-quartz to β quartz, causing an increase in quartz volume. After quenching, cracks and pits formed on the quartz surface, facilitating the diffusion and oxidation of impurities. Subsequent pressure leaching enabled the leaching agent to effectively penetrate the quartz interior, thereby removing impurities from the quartz sand. The experimental results revealed that the optimal conditions for removing impurities through direct roasting and quenching involved using a mixed acid solution containing 3% hydrochloric acid and 6 g/L oxalic acid. The leaching process was conducted at a temperature of 200 ℃ for 4 h in a reactor. Under these conditions, the silicon ore exhibited residual Fe and Al contents of 85 and 320ppmw, respectively, achieving the highest removal rates of 97.98% and 97.85%, the SiO<sub>2</sub> content in silicon ore increased from 94.08% to 99.42%. Compared with leaching under atmospheric pressure leaching, pressure leaching resulted in a 30% increase in the removal rate of impurities. This study provides valuable practical guidance for purifying low-grade silicon ore used in silicon smelting raw materials.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 13-14","pages":"5257 - 5271"},"PeriodicalIF":2.8,"publicationDate":"2024-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s12633-024-03080-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modulating Physiological and Antioxidant Responses in Wheat Cultivars via Foliar Application of Silicon Nanoparticles (SiNPs) Under Arsenic Stress Conditions 在砷胁迫条件下通过叶面喷施硅纳米粒子(SiNPs)调节小麦品种的生理和抗氧化反应
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-07-02 DOI: 10.1007/s12633-024-03078-6
Zahoor Ahmad, Rooma Younis, Tanveer Ahmad, Muhammad Aamir Iqbal, Arkadiusz Artyszak, Yahya M. Alzahrani, Hesham F. Alharby, Hameed Alsamadany

Globally, heavy metals especially arsenic (As) toxicity in staple crops like wheat has posed serious threats to human health, necessitating conducting fresh studies to find out biologically viable As toxicity mitigation strategies. Therefore, this study aimed to investigate the impact of foliar-applied silicon nanoparticles (SiNPs) at the tillering stage on the activation of physiological and antioxidant regulation in wheat to induce tolerance against varying As toxicity levels. The trial comprised two promising wheat cultivars (Anaaj and Ghazi) and five SiNPs regimes including 0, 30, 60, 90, and 120 ppm doses against As toxicity levels of 0 and 25 ppm. The recorded findings depicted that SiNPs regimes significantly improved morphological characteristics such as root length, fresh and dry weight, as well as shoot length, and fresh and dry weight of wheat cultivars. Additionally, the levels of chlorophyll pigments, including chlorophyll a, chlorophyll b, and total chlorophyll contents, were significantly increased in SiNPs-treated plants, indicating improved photosynthetic activity. The enhanced antioxidant enzyme activities, such as ascorbate peroxidase (APX), superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT), played a vital role in combating oxidative stress induced by As toxicity. Moreover, SiNPs application resulted in a significant reduction in As concentration in both leaves and roots, highlighting the ability of SiNPs to regulate the uptake and accumulation of arsenic and mitigate its toxic effects. In conclusion, the foliar application of SiNPs during the tillering stage of wheat effectively activated physiological and antioxidant regulation, leading to enhanced tolerance against As toxicity.

在全球范围内,重金属尤其是砷(As)在小麦等主要作物中的毒性已对人类健康构成严重威胁,因此有必要开展新的研究,找出可行的减轻砷毒性的生物策略。因此,本研究旨在探讨在小麦分蘖期叶面喷施硅纳米粒子(SiNPs)对激活小麦生理和抗氧化调节的影响,以诱导小麦对不同砷毒性水平的耐受性。试验包括两个有前途的小麦栽培品种(Anaaj 和 Ghazi)和五种 SiNPs 方案,包括 0、30、60、90 和 120 ppm 剂量,砷毒性水平分别为 0 和 25 ppm。研究结果表明,SiNPs 可显著改善小麦品种的形态特征,如根长、鲜重和干重,以及芽长、鲜重和干重。此外,SiNPs 处理植物的叶绿素色素水平(包括叶绿素 a、叶绿素 b 和总叶绿素含量)明显提高,表明光合作用活性得到改善。抗坏血酸过氧化物酶 (APX)、超氧化物歧化酶 (SOD)、过氧化物酶 (POD) 和过氧化氢酶 (CAT) 等抗氧化酶活性增强,在对抗砷毒性诱导的氧化应激中发挥了重要作用。此外,施用 SiNPs 还能显著降低叶片和根部的砷浓度,这表明 SiNPs 能够调节砷的吸收和积累,减轻砷的毒性效应。总之,在小麦分蘖期叶面施用 SiNPs 能有效激活生理和抗氧化调节,从而增强对砷中毒的耐受性。
{"title":"Modulating Physiological and Antioxidant Responses in Wheat Cultivars via Foliar Application of Silicon Nanoparticles (SiNPs) Under Arsenic Stress Conditions","authors":"Zahoor Ahmad,&nbsp;Rooma Younis,&nbsp;Tanveer Ahmad,&nbsp;Muhammad Aamir Iqbal,&nbsp;Arkadiusz Artyszak,&nbsp;Yahya M. Alzahrani,&nbsp;Hesham F. Alharby,&nbsp;Hameed Alsamadany","doi":"10.1007/s12633-024-03078-6","DOIUrl":"10.1007/s12633-024-03078-6","url":null,"abstract":"<div><p>Globally, heavy metals especially arsenic (As) toxicity in staple crops like wheat has posed serious threats to human health, necessitating conducting fresh studies to find out biologically viable As toxicity mitigation strategies. Therefore, this study aimed to investigate the impact of foliar-applied silicon nanoparticles (SiNPs) at the tillering stage on the activation of physiological and antioxidant regulation in wheat to induce tolerance against varying As toxicity levels. The trial comprised two promising wheat cultivars (Anaaj and Ghazi) and five SiNPs regimes including 0, 30, 60, 90, and 120 ppm doses against As toxicity levels of 0 and 25 ppm. The recorded findings depicted that SiNPs regimes significantly improved morphological characteristics such as root length, fresh and dry weight, as well as shoot length, and fresh and dry weight of wheat cultivars. Additionally, the levels of chlorophyll pigments, including chlorophyll a, chlorophyll b, and total chlorophyll contents, were significantly increased in SiNPs-treated plants, indicating improved photosynthetic activity. The enhanced antioxidant enzyme activities, such as ascorbate peroxidase (APX), superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT), played a vital role in combating oxidative stress induced by As toxicity. Moreover, SiNPs application resulted in a significant reduction in As concentration in both leaves and roots, highlighting the ability of SiNPs to regulate the uptake and accumulation of arsenic and mitigate its toxic effects. In conclusion, the foliar application of SiNPs during the tillering stage of wheat effectively activated physiological and antioxidant regulation, leading to enhanced tolerance against As toxicity.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 12","pages":"5199 - 5211"},"PeriodicalIF":2.8,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141523898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Silicon
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1