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Infiltration of Erbium ions (Er3+) in Porous Silicon Layer Synthesized by Electrochemical Method: Structural and Optical Properties Studies 电化学方法合成的多孔硅层中铒离子 (Er3+) 的渗透:结构和光学特性研究
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-12 DOI: 10.1007/s12633-024-03136-z
Djamel Kehil, Salah Rahmouni, Noureddine Boukhenoufa, Abdelkrim Djebli, Hadjer mamine, Nihal Nasri, Hacene Bendjeffal

Porous silicon (Psi) has recently attracted considerable attention because of its unique optical and structural properties and capacity to be used in various applications. Due to the importance of this material, we have investigated the infiltration of trivalent erbium ions (Er3+) into silicon-generated pores using the electrochemical approach. The infiltration of Er3+ ions will be done simultaneously with the forming of porous silicon films on p-type (100) silicon substrates. Generating the porous layer can improve the evenness and integration of Er inside the material. During infiltration, Er3⁺ ions can also undergo reduction or co-deposition with other elements at the cathode. The infiltration studies were conducted while subject to the influence of the current density (15–30 mA/cm2). The results showed that the emission of photoluminescence in porous silicon filled with erbium was caused by the presence of Er silicate and Er oxide that developed within the silicon pores during the electrochemical reaction. The reason for introducing rare earth ions is their exceptional optical characteristics, encompassing distinct emission lines and extended lifespan. We comprehensively investigate infiltration and outline the electrochemical etching parameters necessary to create porous silicon. Rare earth ions exhibit exceptional optical luminescence characteristics, displaying a diverse spectrum of optical spectra over the infrared, visible, and ultraviolet regions.

多孔硅(Psi)因其独特的光学和结构特性以及在各种应用中的能力,最近引起了广泛关注。鉴于这种材料的重要性,我们研究了利用电化学方法将三价铒离子(Er3+)渗入硅产生的孔隙中。在 p 型(100)硅衬底上形成多孔硅薄膜时,将同时渗入 Er3+ 离子。生成多孔层可以提高材料内部 Er 的均匀度和整合度。在渗入过程中,Er3⁺离子还可能与阴极的其他元素发生还原或共沉积。浸润研究是在受电流密度(15-30 mA/cm2)影响的情况下进行的。结果表明,在填充了铒的多孔硅中发射光致发光的原因是在电化学反应过程中硅孔隙中形成了硅酸铒和氧化铒。引入稀土离子的原因是其特殊的光学特性,包括独特的发射线和更长的寿命。我们对渗透进行了全面研究,并概述了创建多孔硅所需的电化学蚀刻参数。稀土离子表现出非凡的光学发光特性,在红外、可见光和紫外区域显示出不同的光学光谱。
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引用次数: 0
Synthesis Properties and Neutron Attenuation of New Geopolymers Containing Si, O, Na and Al: Role of Pb Addition 含 Si、O、Na 和 Al 的新型土工聚合物的合成特性和中子衰减:添加铅的作用
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-10 DOI: 10.1007/s12633-024-03132-3
E. O. Echeweozo, Norah Salem Alsaiari, Sultan Alomairy, Fatih Çalışkan, Mine Kırkbınar, M. S. Al-Buriahi

Lead (II) oxide (PbO) has shown high prospect in modifying mechanical, physical, neutron and charge particle interaction properties of geopolymer due to high bonding matrix. In this study, the impact of PbO doping on the microstructure, mechanical strength, neutron and charge particles interaction properties of geopolymer composites was examined. The undoped and doped geopolymer powders were produced and sintered above 1100 °C for 1 h to obtain denser materials. The X-ray diffraction (XRD) analysis showed that the material is rich in cristobalite (C), mullite (M), and lead silicate (P) phases. The EDS analysis of geopolymer gave Si, O, Na and Al with 40.87, 35.37, 6.06 and 17.68% wt respectively as major elements. The Vickers hardness (HV) values for GEO, GEO-10Pb and GEO-20Pb samples were obtained as 595, 647 and 682 HV respectively under 0.5 kg load. The showed that the introduction of 10% and 20% PbO significantly improved the charge particle attenuation, density and Vickers Hardness of the geopolymer while the total fast neutron removal cross-section decreases with increasing lead content.

氧化铅(PbO)具有高键合基体,在改变土工聚合物的机械、物理、中子和电荷粒子相互作用性能方面具有很高的应用前景。本研究考察了氧化铅掺杂对土工聚合物复合材料微观结构、机械强度、中子和电荷粒子相互作用性能的影响。制备出未掺杂和掺杂的土工聚合物粉末,并在 1100 °C 以上烧结 1 小时,以获得更致密的材料。X 射线衍射(XRD)分析表明,材料中含有丰富的钙钛矿(C)、莫来石(M)和硅酸铅(P)相。地聚合物的 EDS 分析显示,主要元素为 Si、O、Na 和 Al,重量百分比分别为 40.87%、35.37%、6.06% 和 17.68%。在 0.5 公斤载荷下,GEO、GEO-10Pb 和 GEO-20Pb 样品的维氏硬度(HV)值分别为 595、647 和 682 HV。研究结果表明,10% 和 20% 的氧化铅能显著改善土工聚合物的电荷粒子衰减、密度和维氏硬度,而总的快中子去除截面则随着铅含量的增加而减小。
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引用次数: 0
Predicting Model for Device Density of States of Quantum-Confined SiC Nanotube with Magnetic Dopant: An Integrated Approach Utilizing Machine Learning and Density Functional Theory 预测带有磁性掺杂剂的量子约束碳化硅纳米管的器件状态密度模型:利用机器学习和密度泛函理论的综合方法
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-10 DOI: 10.1007/s12633-024-03127-0
Nguyen Thanh Tien, Pham Thi Bich Thao, Vusala Nabi Jafarova, Debarati Dey Roy

We investigate the influence of spin and impurity on the density of states of SiC nanotubes employing Density Functional Theory (DFT) and a Machine Learning (ML) based framework. Our study investigates the electronic structures and magnetic properties of various SiC nanotube configurations, including wurtzite, Co-doped, and undoped single-wall (6,0) chiral nanotubes, employing both DFT and pseudopotential approaches. The calculated energy band gap values for SiC bulk structures, nanotubes, and doped systems, retaining local density and local spin density approximations with the Hubbard U method, exhibit distinct characteristics. While undoped SiC systems remain nonmagnetic whereas Co-doped SiC systems show magnetic properties, with a total magnetic moment of around ~ 1.9 µB. Our first-principles calculations indicate that Co-doped SiC nanotubes induce magnetism, however the total energy calculations revealed satisfactory stability for the ferromagnetic phase. Validation against DFT data demonstrates that our model achieves approximately 91.5% accuracy for predicting the density of states for quantum-confined SiC nanotube structures and also showcasing significant potential for further electronic properties calculations in this domain. Integrating ML algorithms with DFT-based approach presents an efficient algorithm for predicting total density of states in quantum-confined nanoscale structures. The fine tree regression algorithm shows highly efficient and effective prediction for density of states calculations.

我们采用密度泛函理论(DFT)和基于机器学习(ML)的框架研究了自旋和杂质对碳化硅纳米管状态密度的影响。我们的研究采用 DFT 和伪势方法研究了各种碳化硅纳米管构型的电子结构和磁性能,包括沃特兹体、掺杂 Co 和未掺杂的单壁 (6,0) 手性纳米管。采用 Hubbard U 方法保留了局部密度和局部自旋密度近似值,计算出的 SiC 体结构、纳米管和掺杂系统的能带间隙值表现出明显的特征。未掺杂的 SiC 系统仍然是非磁性的,而掺杂 Co 的 SiC 系统则显示出磁性,总磁矩约为 1.9 µB。我们的第一原理计算表明,掺杂 Co 的 SiC 纳米管会产生磁性,但总能量计算显示铁磁相具有令人满意的稳定性。根据 DFT 数据进行的验证表明,我们的模型在预测量子约束碳化硅纳米管结构的状态密度方面达到了约 91.5% 的准确率,同时也展示了在该领域进一步进行电子特性计算的巨大潜力。将 ML 算法与基于 DFT 的方法相结合,提出了一种预测量子约束纳米结构总态密度的高效算法。精细树回归算法显示了对状态密度计算的高效预测。
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引用次数: 0
Experimental Investigation into Double-disc and Chemically Assisted Magnetorheological Finishing Process 双盘和化学辅助磁流变光饰工艺的实验研究
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-05 DOI: 10.1007/s12633-024-03128-z
Mayank Srivastava, Kheelraj Pandey, Pulak M. Pandey, Ashwani Sharma

A new hybrid finishing process, namely, double-disc chemical-assisted magnetorheological finishing (DDCAMRF) process has been developed for the polishing of monocrystalline silicon wafers combining the benefits of the two processes namely, chemical–mechanical polishing (CMP) and magneto-rheological finishing (MRF). In the present work, the bonding between the Si atoms gets weakened by the chemical action which further softens the work surface while the rotation of MR fluid provides the desired mechanical force which assists in the removal of material from the work surface. An experimental setup for the hybrid finishing has been designed and fabricated for achieving the nanometric finishing of silicon substrates. Also, the process was further established by carrying out the experimental study which involves analyzing the influence of different process factors viz., polishing speed, % CIP concentration, slurry flow rate, and working gap, on the surface roughness (Ra) of a monocrystalline silicon wafer. An improvement of over 88.96% was observed in the surface roughness of a silicon wafer and a nearly mirror-like finish was observed while carrying out the polishing with the developed DDCAMRF process. The developed process resulted in enhancing the process performance ensuring better surface finish (i.e., with minimal defects) and reduced polishing time compared to different polishing techniques available.

一种新的混合抛光工艺,即双盘化学辅助磁流变抛光(DDCAMRF)工艺,已被开发用于单晶硅片的抛光,该工艺结合了化学机械抛光(CMP)和磁流变抛光(MRF)两种工艺的优点。在目前的工作中,硅原子间的结合力因化学作用而减弱,从而进一步软化了工作表面,而磁流变液体的旋转则提供了所需的机械力,有助于从工作表面去除材料。为了实现硅基底的纳米精加工,我们设计并制造了一套混合精加工实验装置。此外,还通过实验研究进一步确定了该工艺,包括分析不同工艺因素(即抛光速度、CIP 浓度百分比、浆料流速和工作间隙)对单晶硅晶片表面粗糙度(Ra)的影响。在使用所开发的 DDCAMRF 工艺进行抛光时,硅晶片的表面粗糙度提高了 88.96%以上,并获得了近乎镜面的光洁度。与现有的各种抛光技术相比,所开发的工艺提高了工艺性能,确保了更好的表面光洁度(即缺陷最小),并缩短了抛光时间。
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引用次数: 0
Synthesis and Characterization of Biocomposite Sodium Alginate-PVP-Bioglass Beads for Bone Engineering 用于骨工程的生物复合材料海藻酸钠-PVP-生物玻璃珠的合成与表征
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-03 DOI: 10.1007/s12633-024-03116-3
Amel Mohamed Abouelnaga, Amany M. El Nahrawy

Development an advanced drug delivery biocomposite beads using polyvinylpyrrolidone, Sodium Alginate, and bioglass as a carrier for 20% amoxicillin drug. The two beads’ samples were formed by the sol–gel process combined with the dropwise method, through exposure to simulated body fluid (SBF). The obtained beads were assessed by XRD, SEM, and FT-IR confirming the in vitro test. The spectroscopic results confirm their successful development of the apatite layer. The SEM shows that the bio-beads are microsphere structures with a diameter from 405 nm to 4.700 μm. UV/visible diffuse reflectance analysis assessed the impact of loading amoxicillin on optical properties and determined the energy gap (Eg) for the composites, yielding values of 1.25 and 2.59 eV for the direct and indirect transitions. The antimicrobial efficiency is evaluated by employing the agar diffusion method with a range of pathogenic microorganisms. Staphylococcus aureus, Staphylococcus haemolyticus, and Enterococcus faecalis are used as senates for the + ve bacteria, whereas Klebsiella pneumoniae and Escherichia coli as -ve bacteria. The SBF tests confirm apatite covering on the bead surfaces, representative of effective bioactivity. Antimicrobial results establish enhanced performance, signifying the two bio-bead samples as promising applicants for bone tissue engineering.

利用聚乙烯吡咯烷酮、海藻酸钠和生物玻璃作为 20% 阿莫西林药物的载体,开发出一种先进的给药生物复合微珠。这两种微珠样品是通过溶胶-凝胶工艺结合滴注法,在模拟体液(SBF)中形成的。X射线衍射、扫描电镜和傅立叶变换红外光谱对获得的珠子进行了评估,证实了体外测试的结果。光谱结果证实了磷灰石层的成功形成。扫描电镜显示,生物珠为微球结构,直径从 405 纳米到 4.700 微米不等。紫外线/可见光漫反射分析评估了负载阿莫西林对光学特性的影响,并确定了复合材料的能隙(Eg),得出直接和间接转换的能隙值分别为 1.25 和 2.59 eV。采用琼脂扩散法对一系列病原微生物进行了抗菌效率评估。金黄色葡萄球菌、溶血性葡萄球菌和粪肠球菌被用作 +ve 细菌的参比菌,而肺炎克雷伯氏菌和大肠杆菌则被用作 -ve 细菌。SBF 测试确认了珠子表面的磷灰石覆盖层,代表了有效的生物活性。抗菌结果表明,这两种生物微珠样品的性能得到了增强,有望应用于骨组织工程。
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引用次数: 0
Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications 制备并揭示 PMMA-SiO2/CuO 的形态、结构、光学和介电特性--有望用于纳米电子和光子应用的三元纳米结构
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-02 DOI: 10.1007/s12633-024-03131-4
Majeed Ali Habeeb, Idrees Oreibi, Rehab Shather Abdul Hamza, Fellah Mamoun

This research is essential for the progress of nanocomposite technology, with ramifications for society. The development of economical and high-performing nanocomposites may result in improved and adaptable optoelectronic devices, therefore contributing to technical progress and economic advantages. The (PMMA-SiO2/CuO) nanocomposites(NCs) have been prepared using the solution cast method. This study examined the structural, optical, and electrical characteristics of nanocomposites consisting of PMMA-SiO2/CuO. The nanoparticles were uniformly distributed throughout the composite, resulting in a cohesive network within the polymer matrix, as evidenced by the optical microscope photos. The FTIR analysis showed a shift in the peak location and changes in the shape and intensity compared to the pure PMMA sample. The findings about the optical characteristics indicate a significant increase in absorption by approximately 331% (from 0.65 to 2.77) at a wavelength of 520 nm. The absorbance, refractive index, and optical conductivity of pure PMMA exhibited an increase with the rising concentration of (SiO2/CuO) nanoparticles. Additionally, the energy gap experienced a decrease of roughly 120% (from 4.01 to 1.81 eV) for allowed indirect transitions and 248% (from 3.48 to 1.05 eV) for forbidden indirect transitions with increasing concentration of (SiO2/CuO) nanoparticles. The nanocomposites of PMMA-SiO2/CuO exhibit a significant absorbance level in the ultraviolet (UV) region. As the frequency of the applied electric field increased, the dielectric constant and dielectric loss of the (PMMA-SiO2/CuO) nanocomposites decreased, as indicated by the experimental results. With an increase in frequency, the electrical conductivity of an alternating current (A.C.) increases. The dielectric loss of pure PMMA exhibited an increase with the increasing concentration of (PMMA-SiO2/CuO) nanoparticles. At a frequency of 100 Hz, the presence of SiO2/CuO nanoparticles in PMMA increased the dielectric constant by about 44% and the A.C. electrical conductivity by approximately 328% when the nanoparticles accounted for 6% of the total weight. The pressure sensor application investigation findings on NCs demonstrate a direct correlation between the applied pressure and the rise in electrical capacitance (Cp).

这项研究对纳米复合材料技术的发展至关重要,并将对社会产生深远影响。开发经济、高性能的纳米复合材料可改进光电设备并提高其适应性,从而促进技术进步和经济效益。本研究采用溶液浇铸法制备了(PMMA-SiO2/CuO)纳米复合材料(NCs)。本研究考察了由 PMMA-SiO2/CuO 组成的纳米复合材料的结构、光学和电学特性。从光学显微镜照片可以看出,纳米粒子均匀地分布在整个复合材料中,在聚合物基体中形成了一个内聚网络。傅立叶变换红外分析表明,与纯 PMMA 样品相比,峰值位置发生了移动,形状和强度也发生了变化。有关光学特性的研究结果表明,在 520 纳米波长处,吸收率显著增加了约 331%(从 0.65 增加到 2.77)。纯 PMMA 的吸光度、折射率和光导率随着(SiO2/CuO)纳米粒子浓度的增加而增加。此外,随着(SiO2/CuO)纳米粒子浓度的增加,允许间接跃迁的能隙下降了大约 120%(从 4.01 到 1.81 eV),禁止间接跃迁的能隙下降了 248%(从 3.48 到 1.05 eV)。PMMA-SiO2/CuO 纳米复合材料在紫外(UV)区域表现出显著的吸光水平。实验结果表明,随着外加电场频率的增加,(PMMA-SiO2/CuO)纳米复合材料的介电常数和介电损耗降低。随着频率的增加,交流电(A.C.)的导电率也会增加。纯 PMMA 的介电损耗随着(PMMA-SiO2/CuO)纳米粒子浓度的增加而增加。在频率为 100 Hz 时,当纳米粒子占 PMMA 总重量的 6% 时,PMMA 中 SiO2/CuO 纳米粒子的存在使介电常数增加了约 44%,交流导电率增加了约 328%。关于 NCs 的压力传感器应用研究结果表明,施加的压力与电容(Cp)的上升之间存在直接的相关性。
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引用次数: 0
Application of Silicon with Salicylic Acid Up-Regulate Physio-Biochemical Mechanisms of Wheat in Conferring Tolerance to Arsenic Induced Oxidative Stress 施用硅和水杨酸可提高小麦对砷诱导的氧化应激的耐受性的生理生化机制
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-02 DOI: 10.1007/s12633-024-03129-y
Mohamed M. El-Mogy, Hossam S. El-Beltagi, Hayfa Habes Almutairi, Lamy M. M. Hamed, Abdul Sattar, Ahmad Sher, Muhammad Ijaz, Qasim Ali

Arsenic (As) threatens plant growth and human health because its harmful effects are intensified by its persistent presence in the ecosystem. The absorption of As from the contaminated soil leads to accumulation in grains of food crops posing a serious threat to human health. High concentration of As hindered essential physio-biochemical processes of plants that ultimately diminish the growth and yield of crops. Therefore; a pot study was designed to assess synergistic effect of silicon (Si) and salicylic acid (SA) (control-Ck, 4.0 mM Si, 150 µM SA, 4.0 mM Si + 150 µM SA) in mitigating the adversities of As stress in wheat seedlings exposed to As stress (0, and 100 μM). Wheat seedlings exposed to As showed a significant decline in morphological attributes as well as photosynthetic pigments (chlorophyll a, b and carotenoids). However; foliar application of Si and SA considerably increased morphological parameters and leaf photosynthetic pigments under As stress. The imposition of As resulted in enhance accumulation of hydrogen peroxide, MDA, and electrolyte leakage, increased activities of enzymatic antioxidants (superoxide dismutase, peroxidase, and ascorbate peroxidase and catalase) and an elevated accumulation of essential organic osmolytes (free proline, soluble protein, total soluble sugar, total phenolics) in leaves of wheat seedlings. Furthermore, the application of Si + SA resulted in a remarkable increase in the activities of enzymatic antioxidants and accumulation of organic osmolytes. Simultaneously, it reduced the concentration of hydrogen peroxide, MDA, and electrolyte leakage in As-stress wheat seedlings. Under As-stress, sole and combined application of Si and SA caused a significant reduction in arsenic concentration while enhance Si contents in root and shoot of wheat seedlings. In conclusion, synergistic interaction between Si and SA could alleviate the negative impact of As by enhancing the antioxidant defense system, photosynthetic pigments, facilitating osmotic adjustment, and reducing the lipid peroxidation in maize seedlings. The current findings suggest that the combined exogenous application of Si and SA represent a promising approach for promoting the successful cultivation of wheat in As contaminated soil.

Graphical Abstract

砷(As)威胁着植物生长和人类健康,因为它在生态系统中的持久存在加剧了其有害影响。从受污染的土壤中吸收砷会导致砷在粮食作物颗粒中积累,对人类健康构成严重威胁。高浓度的砷会阻碍植物的基本生理生化过程,最终降低作物的生长和产量。因此,我们设计了一项盆栽研究,以评估硅(Si)和水杨酸(SA)(对照组-Ck、4.0 mM Si、150 µM SA、4.0 mM Si + 150 µM SA)在减轻砷胁迫(0 和 100 μM)对小麦幼苗的不利影响方面的协同效应。暴露于砷胁迫的小麦幼苗的形态特征以及光合色素(叶绿素 a、b 和类胡萝卜素)均显著下降。然而,叶面喷施 Si 和 SA 能显著提高 As 胁迫下的形态参数和叶片光合色素。As胁迫导致小麦幼苗叶片中过氧化氢、MDA和电解质渗漏积累增加,酶抗氧化剂(超氧化物歧化酶、过氧化物酶、抗坏血酸过氧化物酶和过氧化氢酶)活性增加,必需有机溶质(游离脯氨酸、可溶性蛋白质、总可溶性糖、总酚类物质)积累增加。此外,施用 Si + SA 能显著提高酶抗氧化剂的活性和有机渗透溶质的积累。同时,它还降低了过氧化氢、MDA 和电解质渗漏的浓度。在砷胁迫条件下,单独施用或联合施用 Si 和 SA 能显著降低砷浓度,同时提高小麦幼苗根部和芽中的 Si 含量。总之,Si 和 SA 的协同作用可通过增强玉米幼苗的抗氧化防御系统、光合色素、促进渗透调节和减少脂质过氧化来减轻砷的负面影响。目前的研究结果表明,联合外源施用 Si 和 SA 是促进小麦在砷污染土壤中成功种植的一种有效方法。
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引用次数: 0
Optimising Shielding Capacity: Pressure Effects on Diatomaceous Earth Composite Materials mixed with Sodium Silicate 优化屏蔽能力:硅藻土与硅酸钠混合复合材料的压力效应
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-09-01 DOI: 10.1007/s12633-024-03120-7
K. A. Mahmoud, O. L. Tashlykov, Taha A. Hanafy, M. I. Sayyed, Islam M. Nabil

A five pressured diatomite clay materials samples were produced as a mixture of diatomaceous earth mineral and sodium silicate for the purpose of this investigation. The forming pressures ranged from 22.84 MPa to 114.24 MPa, and the samples were formed under a variety of conditions. The ratio of Na2SiO3 to the total mass of the produced pressed samples was maintained at precisely 15 wt.% throughout the process. Through the process of increasing the forming pressure, the density of the pressed samples was increased by ~ 11%. For the purpose of determining how the forming pressure will affect the shielding capacity, the Monte Carlo simulation was applied. The linear attenuation of the fabricated pressed diatomite samples improves from 0.123 to 0.136 cm−1 when the forming pressure is increased from 22.84 MPa to 114.24 MPa. By increasing the pressure from 22.84 MPa to 114.24 MPa, the half-value thickness reduced from 5.63 cm to 5.09 cm, and the thickness equivalent = 1 cm of pure Pb metal decreased from 10.09 cm to 9.12 cm. It was found that elevating the forming pressure resulted in an augmentation of the fast neutron removal for the artificially manufactured pressed diatomite samples.

为了进行这项研究,我们制作了五种硅藻土粘土材料样品,它们是硅藻土矿物和硅酸钠的混合物。成型压力从 22.84 兆帕到 114.24 兆帕不等,样品是在各种条件下成型的。在整个过程中,Na2SiO3 占压制样品总质量的比例始终保持在 15%。通过增加成型压力,压制样品的密度增加了约 11%。为了确定成型压力对屏蔽能力的影响,采用了蒙特卡罗模拟。当成型压力从 22.84 兆帕增加到 114.24 兆帕时,压制硅藻土样品的线性衰减从 0.123 厘米-1 提高到 0.136 厘米-1。将压力从 22.84 兆帕提高到 114.24 兆帕后,半值厚度从 5.63 厘米减小到 5.09 厘米,相当于 1 厘米纯铅金属的厚度从 10.09 厘米减小到 9.12 厘米。研究发现,对于人工制造的压制硅藻土样品,提高成型压力可增强快中子去除率。
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引用次数: 0
Synthesis of Highly Ordered Mesoporous Silica (SBA-16) to Support Titania (TiO2) Nanoparticles for Enhancing the Degradation of Diuron Herbicide 合成高有序介孔二氧化硅(SBA-16)以支持钛(TiO2)纳米粒子,从而增强迪古隆除草剂的降解能力
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-31 DOI: 10.1007/s12633-024-03124-3
Chutima Vanichvattanadecha, Angkhana Jaroenworaluck, Pimpun Henpraserttae, Panida Wimuktiwan

In this study, highly ordered mesoporous silica (SBA-16) were synthesized by a one-step sol–gel method, relating to the interaction with the self-assembly of the non-ionic surfactant, pluronic F127 under an acidic condition without the hydrothermal process. SBA-16 was further incorporated with titanium dioxide (TiO2) with varied Si/Ti ratios (11.2, 2.8 and 0.7) to optimize a suitable condition for producing SBA-16/TiO2 composites. After calcination, the composites were characterized by using various techniques to evaluate pore characteristics, morphologies and phase present. Typically, the highly ordered porous structure of the synthesized SBA-16 was confirmed by low angle X-ray analysis (LAXRD) and N2 adsorption isotherms. TiO2 nanoparticles were found at the surfaces of SBA-16 of each composite based on the HR-TEM images. Diuron herbicide in aqueous solutions (50 ppm of the initial concentration) was used as a polluted model for studying on the photocatalytic activity of the composites under an artificial UV illumination for 24 h. Experimental results revealed that SBA-16 could assist on diuron reduction in the dark condition by the adsorption process. Diuron in the solutions were fully degraded by the synthesized TiO2 and the SBA-16/TiO2 composite (0.7 Si/Ti ratio) within 24 h of the UV illumination. In addition, it revealed that SBA-16 could assist on diuron reduction in the dark condition by the adsorption process. The degradation was calculated and followed to the first order kinetic model. Finally, a mechanism of the degradation was discussed and proposed.

本研究采用一步溶胶-凝胶法合成了高有序介孔二氧化硅(SBA-16),该方法与非离子表面活性剂 pluronic F127 在酸性条件下的自组装相互作用有关,无需水热过程。为了优化生产 SBA-16/TiO2 复合材料的合适条件,进一步将 SBA-16 与不同硅/钛比率(11.2、2.8 和 0.7)的二氧化钛(TiO2)结合在一起。煅烧后,使用各种技术对复合材料进行表征,以评估孔隙特征、形态和相的存在。低角 X 射线分析(LAXRD)和 N2 吸附等温线证实了合成的 SBA-16 具有高度有序的多孔结构。根据 HR-TEM 图像,在每种复合材料的 SBA-16 表面都发现了 TiO2 纳米颗粒。实验结果表明,在黑暗条件下,SBA-16 可通过吸附过程帮助降解敌草隆。合成的二氧化钛和 SBA-16/TiO2 复合材料(硅/二氧化钛比为 0.7)可在紫外线照射 24 小时内完全降解溶液中的利谷隆。此外,研究还发现 SBA-16 可以在黑暗条件下通过吸附过程帮助降解利谷隆。根据一阶动力学模型对降解过程进行了计算和跟踪。最后,讨论并提出了降解机理。
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引用次数: 0
Charge Plasma Based Si1-xGex Sourced Nanowire Tunnel Field Effect Transistor Oxygen Gas Device with Enhanced Sensitivity 灵敏度更高的基于等离子体的 Si1-xGex 源纳米线隧道场效应晶体管氧气器件
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-30 DOI: 10.1007/s12633-024-03126-1
Navaneet Kumar Singh, Chandan Kumar, Thakur Prasad Mahato, Suraj Kumar, Saquib Azam, Shradhya Singh, Naveen Kumar, Prashant Kumar Singh, Rajib Kar, Durbadal Mandal

In this paper, Charge Plasma Nanowire Tunnel Field Effect Transistor based sensor is proposed for the recognition of Oxygen (O2) gas molecules by means of a Silicon Germanium (Si1-xGex) sourced device abbreviated as SiGe-CP-NW-TFET. The electrical performances of SiGe-CP-NW-TFET have been compared with the conventional Charge Plasma Nanowire Tunnel Field Effect Transistor (CP-NW-TFET). The parameters measured for comparison are ION, IOFF, ION/IOFF, Subthreshold slope (SS), and threshold voltage (Vt). The proposed SiGe-CP-NW-TFET has better electrical performance as compared to Si-CP-NW-TFET. Further, the device characteristics such as electric potential, electric field, charge carriers, and energy band diagram of both the devices have also been compared. The fundamental physics of the proposed sensor is also explored from a comprehensive electrostatic study of the tunnelling junction in the context of gas molecule adsorption. The influence of device constraints of the proposed SiGe-CP-NW-TFET on the electrical performance indicators has also been studied. The device parameters e.g. oxide thickness, extended gate length, silicon film thickness, and molar concentration of SiGe at the source side are considered. The impact of oxide thickness, extended gate length, the radius of NW, and the concentration of SiGe (molar) at the source side have been analysed on the sensitivity of the O2 gas sensor. The presented Oxygen gas sensor has an ION/IOFF ratio of 3.65 × 107 and a subthreshold slope of 58.23 mV/decade.

本文提出了基于电荷等离子体纳米线隧道场效应晶体管的传感器,通过硅锗(Si1-xGex)源器件(缩写为 SiGe-CP-NW-TFET)识别氧气(O2)气体分子。SiGe-CP-NW-TFET 的电气性能与传统的电荷等离子体纳米线隧道场效应晶体管 (CP-NW-TFET) 进行了比较。用于比较的测量参数包括 ION、IOFF、ION/IOFF、次阈值斜率 (SS) 和阈值电压 (Vt)。与 Si-CP-NW-TFET 相比,拟议的 SiGe-CP-NW-TFET 具有更好的电气性能。此外,还比较了两种器件的电动势、电场、电荷载流子和能带图等器件特性。在气体分子吸附的背景下,通过对隧道结的综合静电研究,还探讨了拟议传感器的基本物理原理。此外,还研究了拟议的 SiGe-CP-NW-TFET 器件约束对电气性能指标的影响。研究考虑了器件参数,如氧化物厚度、扩展栅极长度、硅薄膜厚度以及源侧 SiGe 的摩尔浓度。分析了氧化物厚度、扩展栅极长度、氮化硅半径和源侧锡锗(摩尔)浓度对氧气传感器灵敏度的影响。该氧气传感器的离子/离子交换比为 3.65 × 107,阈下斜率为 58.23 mV/decade。
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