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Performance Comparison of Carbon Footprint and Dielectric Properties of Geopolymer Mortars with Portland Cement Mortars 地聚合物砂浆与硅酸盐水泥砂浆的碳足迹和介电性能比较
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-02 DOI: 10.1007/s12633-025-03538-7
Talip Çakmak, Caner Murat, İlker Ustabaş

Building constituents used in the construction industry, peculiarly cement and concrete, generate significant carbon emissions. CO2 discharges from cement constitute approximately 5–9% of global expelling. Geopolymer is a retainable and eco-friendly innovative constituent developed as an option to Portland cement concrete using waste constituents. Therefore, this examination investigated the life cycle carbon emissions and dielectric properties of geopolymer mortars used to reduce climate change and carbon emissions from building materials. The investigation investigated the carbon emission and electromagnetic wave resistance of obsidian-based silica fume-substituted geopolymer mortars using 12 M NaOH as alkali activator. All these properties were compared with Portland cement mortars. When comparing geopolymer and OPC mortars, it was detected that the CO2 emissions of geopolymer mortars were very low compared to OPC mortars. In addition, when 28-day values were considered, mechanical strength and CO2 emissions were evaluated together, and as a result, geopolymers yielded lower kg CO2-eq/MPa values in the range of 66.45%-73.01% compared to the contents of the mixtures. These values show that geopolymers are more environmentally friendly and high performance building materials than OPC mortars.This study investigated the dielectric and electrical properties of standard and modified mortars for high-frequency applications. Measurements were performed up to 888 h of curing using a Vector Network Analyzer (VNA) to obtain Scattering parameters, complex permittivity, loss tangent, and conductivity. The dielectric constant of mortar in control group decreased from 4.161 to 3.340 in 28 day, and its conductivity fell from 34.226 mS/m to 21.891 mS/m. Modified mixtures began with lower initial values but increased and stabilized above the control's final values. Mix 1 demonstrated superior shielding, showing 0.60 normalized signal attenuation through 30 cm, while the control showed 0.50 attenuation. The results obtained from this study demonstrate that geopolymers are not only sustainable and environmentally friendly materials in general, but also measurably reduce CO2 emissions by 66.45%–73.01% and provide higher electromagnetic shielding performance with a normalised signal attenuation of 0.60. Therefore, geopolymers offer significant potential for both reducing the carbon footprint and high-performance building applications requiring electromagnetic protection.

建筑行业使用的建筑材料,尤其是水泥和混凝土,会产生大量的碳排放。水泥排放的二氧化碳约占全球排放量的5-9%。地聚合物是一种可再生的、环保的创新成分,是波特兰水泥混凝土使用废物成分的一种选择。因此,本研究调查了用于减少气候变化和建筑材料碳排放的地聚合物砂浆的生命周期碳排放和介电性能。以12m NaOH为碱活化剂,研究了黑曜石基硅烟取代地聚合物砂浆的碳排放和抗电磁波性能。并与硅酸盐水泥砂浆进行了性能比较。通过对比地聚合物和OPC迫击炮,可以发现地聚合物迫击炮的CO2排放量比OPC迫击炮低得多。此外,当考虑28天的值时,将机械强度和二氧化碳排放量一起进行评估,结果表明,与混合物含量相比,地聚合物产生的kg CO2当量/MPa值在66.45%-73.01%之间。这些数值表明,地聚合物是比OPC砂浆更环保和高性能的建筑材料。研究了标准砂浆和改性砂浆在高频应用中的介电性能和电性能。使用矢量网络分析仪(VNA)进行了长达888小时的测量,以获得散射参数,复介电常数,损耗正切和电导率。对照组砂浆介电常数在28 d内由4.161降至3.340,电导率由34.226 mS/m降至21.891 mS/m。改良后的混合物开始时具有较低的初始值,但增加并稳定在对照的最终值之上。Mix 1表现出优异的屏蔽性能,在30 cm处的归一化信号衰减为0.60,而对照组的衰减为0.50。本研究的结果表明,地聚合物不仅是一种可持续的环保材料,而且可以减少66.45%-73.01%的二氧化碳排放量,并提供更高的电磁屏蔽性能,归一化信号衰减为0.60。因此,地聚合物为减少碳足迹和需要电磁保护的高性能建筑应用提供了巨大的潜力。
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引用次数: 0
Design and Analysis of a Photonic Crystal DWDM Demultiplexer using an Overlap Ring Cavity to Drop Narrow Linewidth Channels 利用重叠环腔降窄线宽信道的光子晶体DWDM解复用器的设计与分析
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-02 DOI: 10.1007/s12633-025-03470-w
V. R. Balaji, M. Medha, Enaul haq Shaik, A. Sivasubramanian, Nadir Ali, Gopalkrishna Hegde,  G.Vinitha

In this article, we designed a dense wavelength division multiplexing demultiplexer for C band applications and analyzed it for uniform spectral linewidth. The design is made with single ring cavity, modified overlap cavity, and overlap cavity, and it’s performance parameters are determined using simulations. The primary governing structure consists of a Y-shaped inverted input bus waveguide, a cavity, and a drop waveguide. The coupled mode theory is used to study the transmission and reflection properties at the ports. Plane Wave Expansion Method and Finite Difference Time Domain methods are used to determine Photonic Band Gap and observe normalized transmission of the proposed design for analysis, respectively. The proposed design results in a spectral line width of 0.1 nm (at 12.5 GHz) and 0.2 nm (at 25 GHz), a high-quality factor of 12,000, 100% transmission efficiency, and less crosstalk of -33 dB, which meets ITU DWDM Standards. The footprint of the proposed structure is compact with a dimension of 64 µm2. Finally, the proposed demultiplexer design achieves a narrow and uniform spectral linewidth. It supports higher data rates, maximizes spectral efficiency, and reduces interference between adjacent channels. These features are essential for future real-time systems. The proposed demultiplexer design delivers a narrow and uniform spectral linewidth, enabling higher data rates, maximizing spectral efficiency, and minimizing interference between adjacent channels, making it ideal for future real-time communication systems in 6G networks.

Graphical Abstract

本文设计了一种用于C波段的密集波分复用解复用器,并对其进行了均匀谱线宽的分析。设计了单环腔、改进的重叠腔和重叠腔,并通过仿真确定了其性能参数。主控制结构由y型倒置输入母线波导、空腔和跌落波导组成。利用耦合模式理论研究了光纤在端口处的传输和反射特性。采用平面波展开法和时域有限差分法分别确定光子带隙和观测归一化传输。该设计的谱线宽度分别为0.1 nm (12.5 GHz)和0.2 nm (25 GHz),高质量因数为12,000,传输效率为100%,串扰小于-33 dB,符合国际电联DWDM标准。拟议结构的占地面积紧凑,尺寸为64µm2。最后,提出的解复用器设计实现了窄而均匀的谱线宽度。它支持更高的数据速率,最大限度地提高频谱效率,减少相邻信道之间的干扰。这些特性对未来的实时系统至关重要。提出的解复用器设计提供窄而均匀的谱线宽度,实现更高的数据速率,最大限度地提高频谱效率,并最大限度地减少相邻信道之间的干扰,使其成为6G网络中未来实时通信系统的理想选择。图形抽象
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引用次数: 0
Manufacturing and Ameliorating the Features of Silicon Carbide-Silicon Nitride Futuristic Nanomaterials Doped Organic Polymer for Flexible Optoelectronics and Photonics Applications 柔性光电子与光子学应用中碳化硅-氮化硅掺杂有机聚合物未来纳米材料的制备与性能改进
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-02 DOI: 10.1007/s12633-025-03559-2
Aseel Hadi, Hamed Ibrahim, Ahmed Hashim, Najah M. L. Al Maimuri

The current article goals to synthesize of silicon carbide(SiC)/silicon nitride(Si3N4) nanomaterials doped polyvinyl alcohol(PVA) as a promising nanocomposites films to employ in various optoelectronics fields. When compare with other films of nanocomposites, the PVA/SiC/Si3N4 films have distinguished optical properties, inexpensive, superior physical and chemical properties make them suitable for many futuristic applications. The morphological, structural, and optical features of PVA/SiC/Si3N4 films were examined. The morphological and structural features involved FTIR and optical microscope (OM). The results showed the absorbance of PVA/SiC/Si3N4 films is high at (UV-S) Ultraviolet spectra. The PVA absorbance enhanced of 90% at λ = 320 nm(UV-S) while its increase of 95.7% at λ = 800 nm (NIR-S) when the SiC/Si3N4 ratio reached of 3.9 wt.%. These results make the PVA/SiC/Si3N4 films are important and promising for NIR sensing, UV blocking and other optoelectronics applications. The PVA energy gap reduced from 4.7 eV to 2.8 eV and from 4.2 eV to 1.4 eV when the SiC/Si3N4 NPs content reached of 3.9 wt.% for allowed and forbidden transitions, and this performance made them welcomed in numerous optoelectronics and photonics approaches. The refractive index was increased from 2.05 to 2.6 at UV-spectra (λ = 200 nm) with rising the SiC/Si3N4 NPs content to 3.9 wt.%. The optical factors: absorption coefficient; extinction coefficient; real and imaginary dielectric constants of PVA were enhanced with increasing SiC/Si3N4 NPs content; these results cause to made the PVA/SiC/Si3N4 films are appropriate in optical applications. The PVA optical conductivity is improved about 94.3% at λ = 320 nm while the SiC/Si3N4 content reached of 3.9 wt.%. These values are appropriate for promising optical applications. Finally, the realized results established the PVA/SiC/Si3N4 films can be useful for promising optoelectronics fields.

本文旨在合成掺杂聚乙烯醇(PVA)的碳化硅(SiC)/氮化硅(Si3N4)纳米材料,作为一种有前景的纳米复合材料薄膜,应用于光电子学的各个领域。与其他纳米复合材料薄膜相比,PVA/SiC/Si3N4薄膜具有独特的光学性能,价格低廉,优越的物理和化学性能使其适合于许多未来的应用。研究了PVA/SiC/Si3N4薄膜的形态、结构和光学特性。用红外光谱和光学显微镜对其进行了形态学和结构特征分析。结果表明,PVA/SiC/Si3N4薄膜在(UV-S)紫外光谱下具有较高的吸光度。当SiC/Si3N4比为3.9 wt.%时,PVA在λ = 320 nm(UV-S)处的吸光度提高了90%,在λ = 800 nm(NIR-S)处的吸光度提高了95.7%。这些结果使得PVA/SiC/Si3N4薄膜在近红外传感、紫外阻挡和其他光电子应用中具有重要的应用前景。当SiC/Si3N4 NPs含量达到3.9 wt.%时,允许和禁止跃迁的PVA能隙从4.7 eV减少到2.8 eV,从4.2 eV减少到1.4 eV,这种性能使它们在许多光电子学和光子学方法中受到欢迎。当SiC/ si3n4nps含量增加到3.9 wt.%时,在紫外光谱(λ = 200 nm)下的折射率从2.05增加到2.6。光学因子:吸收系数;消光系数;PVA的实介电常数和虚介电常数随SiC/ si3n4nps含量的增加而增大;这些结果使得PVA/SiC/Si3N4薄膜适合光学应用。在λ = 320 nm处,PVA的光导率提高了94.3%,SiC/Si3N4含量达到3.9 wt.%。这些值适用于有前途的光学应用。最后,实现的结果表明PVA/SiC/Si3N4薄膜可用于前景广阔的光电子领域。
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引用次数: 0
Preparation and Performance of High-temperature-resistant Electrical Insulating Coatings on Copper Surfaces with Polysilazanes 含聚硅氮烷铜表面耐高温电绝缘涂层的制备及性能研究
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03550-x
Zhaoqun Pan, Zhiliang Shen, Ming Zhong

The aim of this study is to develop a composite coating with high-temperature-resistant electrical insulation properties, designed for application on the surface of metallic copper substrates. This addresses the dual challenges of oxidation resistance and electrical insulation for copper components in high-temperature environments. In this research, an organic polysilazane resin was combined with silicon carbide (SiC) filler to create a protective composite coating on metallic copper surfaces. The parameters for the coating preparation process were systematically optimized. To further improve the interfacial compatibility between the filler and the resin, γ-glycidyl ether oxypropyltrimethoxysilane (KH-560) was employed for the surface modification of SiC. The chemical composition changes in the powder before and after modification were characterized using Fourier-transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The microstructural morphology of the coating was examined using scanning electron microscopy (SEM), and various properties of the coating were thoroughly investigated. The results demonstrate that the modification of the powder significantly enhanced the coating's resistance to high temperatures, thereby maintaining its structural integrity after exposure to 500 °C for 2 h and 750 °C for 30 min. The coating exhibited a range of superior properties, including exceptional hydrophobicity, high hardness, and substantial electrical insulation. SEM analysis revealed that the dispersion of the modified powder within the coating was improved, reducing the occurrence of agglomeration and enhancing the compatibility between the resin and the powder. This improvement mitigated issues related to coating cracking and adhesion degradation, thereby enhancing the coating's high-temperature resistance. The polysilazane/SiC composite coating, developed through a silane coupling agent interface modification strategy, successfully achieved a synergistic enhancement of temperature resistance and electromechanical protection properties by optimizing filler dispersion and interfacial bonding.

本研究的目的是开发一种具有耐高温电绝缘性能的复合涂层,设计用于金属铜基板表面。这解决了高温环境中铜组件的抗氧化和电绝缘的双重挑战。在这项研究中,有机聚硅氮烷树脂与碳化硅(SiC)填料相结合,在金属铜表面形成保护性复合涂层。对涂层制备工艺参数进行了系统优化。为了进一步改善填料与树脂的界面相容性,采用γ-缩水甘油酯醚氧丙基三甲氧基硅烷(KH-560)对SiC进行表面改性。采用傅里叶变换红外光谱(FTIR)、x射线衍射(XRD)和x射线光电子能谱(XPS)对改性前后粉体的化学成分变化进行了表征。利用扫描电子显微镜(SEM)观察了涂层的显微组织形态,并对涂层的各项性能进行了深入研究。结果表明,改性后的粉末显著增强了涂层的耐高温性能,在500℃下保温2 h和750℃下保温30 min后仍能保持涂层的结构完整性。该涂层表现出一系列优异的性能,包括特殊的疏水性、高硬度和大量的电绝缘。SEM分析表明,改性粉末在涂层内的分散性得到改善,减少了团聚的发生,增强了树脂与粉末之间的相容性。这种改进减轻了与涂层开裂和附着力下降有关的问题,从而提高了涂层的耐高温性能。通过硅烷偶联剂界面改性策略制备的聚硅氮烷/SiC复合涂层,通过优化填料分散和界面结合,成功地实现了耐温性能和机电保护性能的协同增强。
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引用次数: 0
Silver-Assisted Chemical Etching for Enhanced Surface Texturing and Light Absorption in Multicrystalline Silicon Solar Cells 银辅助化学蚀刻增强多晶硅太阳能电池表面纹理和光吸收
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03570-7
Aravind Mani, Prammitha Rajaram, Keerthivasan Thamotharan

Solar energy has emerged as a promising alternative to conventional energy sources due to its renewable and environmentally benign nature. Silicon-based solar cells remain at the forefront of photovoltaic technologies, where surface texturing plays a critical role in enhancing light absorption and minimizing optical losses. This study investigates the impact of different chemical etchants, 4 M HF with AgNO₃ (0.006 M and 0.008 M) and KOH (2% and 4%) with 20% IPA on the surface morphology and optical properties of multicrystalline silicon (mc-Si) wafers. Surface analysis revealed that Ag-assisted etching promotes the formation of well-defined pyramidal textures, while KOH-based etching results in smoother, wave-like structures. UV–vis diffuse reflectance spectroscopy confirmed that mc-Si wafers etched with 4 M HF + 0.006 M AgNO₃ exhibited the lowest reflectance and highest optical absorbance. These findings highlight the potential of optimized Ag-assisted chemical etching to improve light-harvesting efficiency, offering a viable pathway for advancing high-performance silicon solar cell technologies.

太阳能由于其可再生和对环境无害的特性,已成为传统能源的一个有前途的替代品。硅基太阳能电池仍然处于光伏技术的前沿,其表面纹理在增强光吸收和最小化光损耗方面起着关键作用。研究了不同化学腐蚀剂,4 M HF与AgNO₃(0.006 M和0.008 M)和KOH(2%和4%)与20% IPA对多晶硅(mc-Si)晶圆表面形貌和光学性能的影响。表面分析表明,ag辅助蚀刻促进了明确的金字塔结构的形成,而koh基蚀刻则产生了更光滑的波状结构。UV-vis漫反射光谱证实,用4 M HF + 0.006 M AgNO₃蚀刻的mc-Si硅片具有最低的反射率和最高的光学吸光度。这些发现突出了优化银辅助化学蚀刻提高光收集效率的潜力,为推进高性能硅太阳能电池技术提供了可行的途径。
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引用次数: 0
Silicon Application Technology to Mitigate Saline Stress in Umbu-Cajazeira 缓解Umbu-Cajazeira盐胁迫的硅应用技术
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03555-6
Patrycia Elen Costa Amorim, Vander Mendonça, Hernane Arllen Medeiros Tavares, Agda Malany Forte de Oliveira, Enoch de Souza Ferreira, Matheus Augusto Silva, Paulo Cássio Alves Linhares, Luderlândio de Andrade Silva, Pedro Dantas Fernandes, Romualdo Medeiros Cortez Costa, Tayd Dayvison Custódio Peixoto, Francisco Vanies da Silva Sá

Purpose

Saline stress limits agricultural production, which is more severe in semiarid regions. The umbu-cajazeira (Spondias sp.) is native to the semiarid region of Brazil. Studies on sources and forms of silicon application in Spondias sp. are unpublished. To evaluate the effect of Si applied through different methods on ecophysiology, biochemistry, osmotic and ionic homeostasis of Umbu-Cajazeira seedlings under salt stress.

Methods

The experiment was conducted in a plant nursery using a completely randomized design with five treatments: [T1 = ECw 0.5 dS m⁻1 (control); T2 = ECw 3.5 dS m⁻1 (salt stress); T3 = salt stress + 3.5 g of CaSiO₃ (soil application); T4 = salt stress + 2.2 mL L⁻1 of K₂SiO₃ (foliar application); and T5 = T3 + T4], with eight replications.

Results

Salt stress negatively affected the growth, gas exchange, and photosynthetic activity of Umbu-Cajazeira seedlings. Si fertilization did not positively affect these traits compared to the salt stress treatment, differing only in the content of chlorophyll a, carotenoids, proline, amino acids, and sodium in leaves. Silicate fertilization was insufficient to mitigate the effects of irrigation water salinity (3.5 dS m1) on the photosynthetic activity and growth of Umbu-Cajazeira seedlings.

Conclusions

Calcium silicate improves osmotic adjustment, amino acid accumulation, and calcium accumulation and reduces sodium content in the leaves of the Umbu-Cajazeira seedlings under salt stress.

盐碱胁迫限制了农业生产,在半干旱地区更为严重。云杉(Spondias sp.)原产于巴西的半干旱地区。关于海绵藻中硅的来源和应用形式的研究尚未发表。评价不同施硅方式对盐胁迫下云杉幼苗生态生理、生化、渗透及离子稳态的影响。方法采用完全随机设计,在苗圃中进行实验,共5个处理:[T1 = ECw 0.5 dS m毒血症(对照组);T2 = ECw 3.5 dS m(盐应力);T3 =盐胁迫+ 3.5 g CaSiO₃(土壤施用);T4 =盐胁迫+ 2.2 mL L₂SiO₃(叶面施用);T5 = T3 + T4],共8个重复。结果盐胁迫对云杉幼苗生长、气体交换和光合活性均有不利影响。与盐胁迫处理相比,施硅对这些性状无显著影响,仅在叶片叶绿素a、类胡萝卜素、脯氨酸、氨基酸和钠含量上有差异。硅酸盐施肥不足以缓解灌溉水盐度(3.5 dS m1)对黑麦幼苗光合活性和生长的影响。结论硅酸钙促进了盐胁迫下黑豆幼苗叶片的渗透调节、氨基酸积累和钙积累,降低了钠含量。
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引用次数: 0
Overcoming Silicon MOSFET Limitations with Chirality-Engineered CNTFETs: A Ternary Half Adder Demonstration for Next-Generation Nanoelectronics 用手性工程cntfet克服硅MOSFET的限制:新一代纳米电子学的三元半加法器演示
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03551-w
Shams Ul Haq, Erfan Abbasian, Tabassum Khurshid, Abdolreza Darabi, Pavan Kumar Mukku, Vijay Kumar Sharma

The implementation of multi-valued logic (MVL) systems becomes increasingly difficult as silicon MOSFETs reach their scaling limits due to fixed threshold voltages and worsened short-channel effects. Carbon nanotube field-effect transistors (CNTFETs) present a compelling alternative, exhibiting ballistic charge transport characteristics and chirality-dependent threshold voltage tunability—an essential property for realizing efficient MVL implementations. Comprehensive device characterization using HSPICE demonstrates the superior electrical characteristics of CNTFETs over conventional MOSFETs. The ON current (({I}_{ON})) of the n-type CNTFET is approximately 2.66 times greater than that of its n-type MOSFET counterpart, whereas its OFF current (({I}_{OFF})), exceeds by more than 16.1 times. For the p-type devices, the CNTFET exhibits an ({I}_{ON}) over 2.866 times higher than that of the p-type MOSFET, while its ({I}_{OFF}) exceeds by more than 12.4 times. The Ion/Ioff ratio for n-type and p-type CNTFETs is 42.9 and 36.7 times higher, respectively, compared to their MOSFET counterparts. Utilizing chirality engineering, the CNTFETs are specifically adjusted to implement the ternary logic. This work delves into the chirality engineering of CNTFETs, utilizing (19,0) and (10,0) vectors, to develop an optimized novel high-performance and robust CNTFET-based ternary half adder (THA). The proposed 38-transistor architecture employs a dual-supply voltage scheme and eliminates conventional gates and multiplexers, resulting in a compact 4.6 µm2 layout. Simulations using the 32-nm Stanford CNTFET model reveal 13.9% lower power consumption (0.940 µW), 12.4% faster delay (50.165 ps), and 25.4% better power-delay product (0.047 pJ) than the best existing THA design. The design also demonstrates strong resilience to parametric variations, making it a promising solution for low-power, high-speed arithmetic units in energy-constrained nanoelectronics systems.

由于固定的阈值电压和恶化的短通道效应,硅mosfet达到了它们的缩放极限,多值逻辑(MVL)系统的实现变得越来越困难。碳纳米管场效应晶体管(cntfet)提供了一个令人信服的替代方案,具有弹道电荷输运特性和手性相关的阈值电压可调性,这是实现高效MVL的基本特性。利用HSPICE对器件进行全面表征,证明了cntfet优于传统mosfet的电气特性。n型CNTFET的ON电流(({I}_{ON}))约为n型MOSFET的2.66倍,而其OFF电流(({I}_{OFF}))则超过16.1倍。对于p型器件,CNTFET的效率({I}_{ON})比p型MOSFET高2.866倍以上,而其({I}_{OFF})比p型MOSFET高出12.4倍以上。与MOSFET相比,n型和p型cntfet的离子/ off比分别高42.9倍和36.7倍。利用手性工程,cntfet被专门调整以实现三元逻辑。这项工作深入研究了cntfet的手性工程,利用(19,0)和(10,0)向量,开发了一种优化的新型高性能鲁棒的基于cntfet的三元半加法器(THA)。所提出的38晶体管架构采用双电源电压方案,并消除了传统的门和多路复用器,从而实现紧凑的4.6µm2布局。使用32nm Stanford CNTFET模型进行模拟,结果显示13.9% lower power consumption (0.940 µW), 12.4% faster delay (50.165 ps), and 25.4% better power-delay product (0.047 pJ) than the best existing THA design. The design also demonstrates strong resilience to parametric variations, making it a promising solution for low-power, high-speed arithmetic units in energy-constrained nanoelectronics systems.
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引用次数: 0
A Novel D-Mode Triple-Layer Cap Recessed-Gate Al0.20Ga0.80N/GaN HEMT for Radio Frequency and Low Noise Applications 一种用于射频和低噪声应用的新型d模三层帽嵌入门Al0.20Ga0.80N/GaN HEMT
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03486-2
Amit Agarwal, Sumit Kale

In this work, a novel triple-layer cap recessed gate Al0.20Ga0.80N/GaN HEMT on a 6H-SiC substrate in depletion-mode operation is proposed and investigated for radio frequency and low noise applications. An optimization framework focused on 100 nm to 400 nm gate lengths using the Silvaco TCAD. A triple-layer cap enhances 2DEG density and lowers on-resistance due to the increased conduction band bending. The recessed gate technique enhances threshold voltage, improves electrostatic control, and suppresses short-channel effects. The DC characteristics, such as drain current, transconductance, and threshold voltage, have been investigated for the proposed device. In addition, we have also investigated Radio Frequency parameters, specifically cutoff frequency and maximum frequency. Moreover, the noise parameters investigated for the proposed device include the minimum noise figure and noise resistance. An investigation of the noise parameters has been conducted over the frequency span of 10 to 110 GHz, which covers the frequency range up to the W band as per the IEEE radio frequency standard. The proposed device exhibits improved RF and noise parameters in comparison with state-of-the-art devices. The device models are calibrated against experimental data to validate the simulation models. A process flow has also been proposed for the feasibility of device fabrication.

在这项工作中,在6H-SiC衬底上提出并研究了一种新型的三层帽凹栅Al0.20Ga0.80N/GaN HEMT,用于射频和低噪声应用。使用Silvaco TCAD优化了100 nm至400 nm栅极长度的框架。三层帽提高2DEG密度和降低导通电阻,因为增加了导通带弯曲。凹栅技术提高了阈值电压,改善了静电控制,抑制了短通道效应。研究了该器件的直流特性,如漏极电流、跨导和阈值电压。此外,我们还研究了射频参数,特别是截止频率和最大频率。此外,所研究的噪声参数包括最小噪声系数和噪声阻力。在10至110千兆赫的频率范围内对噪声参数进行了调查,根据IEEE无线电频率标准,该频率范围可达W波段。与最先进的器件相比,所提议的器件具有改进的射频和噪声参数。根据实验数据对器件模型进行校准,以验证仿真模型。还提出了器件制造可行性的工艺流程。
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引用次数: 0
Nano-SiC Modified Iron Tailings Foam Concrete: Synergistic Modulation of Pore Structure, Mechanical and Dual-Band Wave Absorption Properties 纳米碳化硅改性铁尾矿泡沫混凝土:孔隙结构、力学和双波段吸波性能的协同调制
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-12-01 DOI: 10.1007/s12633-025-03529-8
Ying-hua Bai, Ling-feng Han, Yong-jie Chen

In order to alleviate the problems of bulk solid waste disposal of iron tailings and electromagnetic wave pollution, a composite iron tailings/silicon carbide nanocomposite foam concrete wave-absorbing material was designed in this study. By replacing the cement matrix with iron tailings (20 wt.%) and using nano-silicon carbide doping to achieve functional modification, the mechanism of iron tailings-nano-silicon carbide synergistic effect on foam concrete mechanical and electrical conductivity was systematically revealed. The experimental results show that when the content of iron tailings reaches 20 wt.%, the average pore size increases from 235 μm to 277 μm, and the improvement of pore connectivity promotes the formation of a conductive network. When the content of nano-silicon carbide is 8 wt.%, the compressive and flexural strength reached a maximum of 2.51 MPa and 1.28 MPa, respectively, which increased 25.5% and 37.63%, respectively, compared with the control group. The composite material exhibits a bimodal absorption characteristic in the X-band and Ku-band, producing reflection loss peaks of -24.50 dB and -19.50 dB at 12.38 GHz and 14.00 GHz, in particular. The valid absorbing bandwidths are 1.67 GHz (10.73–12.4 GHz) and 1.4 GHz (13.31–14.71 GHz).

为缓解铁尾矿固体垃圾处理和电磁波污染问题,设计了铁尾矿/碳化硅纳米复合泡沫混凝土吸波材料。通过用铁尾矿(20wt .%)替代水泥基体,并采用纳米碳化硅掺杂进行功能改性,系统揭示了铁尾矿-纳米碳化硅协同作用对泡沫混凝土力学导电性影响的机理。实验结果表明,当铁尾矿含量达到20 wt.%时,平均孔径由235 μm增大到277 μm,孔隙连通性的提高促进了导电网络的形成。当纳米碳化硅含量为8 wt.%时,抗压强度和抗折强度分别达到最大值2.51 MPa和1.28 MPa,比对照组分别提高了25.5%和37.63%。复合材料在x波段和ku波段表现出双峰吸收特性,特别是在12.38 GHz和14.00 GHz处产生-24.50 dB和-19.50 dB的反射损耗峰。有效吸收带宽分别为1.67 GHz (10.73 ~ 12.4 GHz)和1.4 GHz (13.31 ~ 14.71 GHz)。
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引用次数: 0
Magnetic Dispersive Micro Solid-phase Extraction for Determination of Trace Sodium Dodecyl Sulfate using Amine-functionalized Mesoporous Silica Nanocomposites 胺功能化介孔二氧化硅纳米复合材料磁分散微固相萃取法测定微量十二烷基硫酸钠
IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2025-11-29 DOI: 10.1007/s12633-025-03513-2
Maryam Khabazipour, Fariba Safa, Pegah Zanjanchi, Elahe Bozorgzadeh, Shahab Shariati

Sodium dodecyl sulfate (SDS) is a widely used anionic surfactant that poses significant toxicity risks to living organisms. In this study, an environmentally friendly and integrated approach for the determination of SDS in aqueous samples is presented. A novel method was developed by combining magnetic dispersive micro solid-phase extraction utilizing amine-functionalized mesoporous silica magnetic nanocomposites with ion-pair liquid–liquid extraction (MD-μSPE/ILLE), followed by visible spectrophotometric detection. This approach enables effective preconcentration and sensitive detection of SDS in water samples. The synthsized nanocomposite (Fe3O4@SiO2@Kit-6-NH2) was characterized using XRD, BET, FT-IR, SEM, TEM, and VSM methods. To optimize the SDS extraction, the influence of several experimental factors- namely sample volume, pH, adsorbent mass, contact time, and ionic strength- was systematically evaluated using the Taguchi orthogonal array design (OA16). Analysis of variance revealed that ionic strength (58.24%) was the most influential factor affecting SDS adsorption onto the nanocomposite, followed by adsorbent mass (19.78%), sample volume (12.09%), and contact time (7.58%). The maximum SDS extraction efficiency was attained under optimal conditions with a sample volume of 120 mL, adsorbent dosage of 1.0 g L−1, pH 3, and without salt addition. After adsorption step, the conditions of the SDS desorption were optimized and distilled water was chosen as the best eluent. The proposed MD-µSPE/ILLE method exhibited excellent analytical performance, with a linearity range of 2.0–200.0 µg L−1 (R2 = 0.9924), limit of detection of 0.55 µg L−1, enhancement factor of 240.0, and a relative standard deviation (RSD %) of 1.7%. The developed method was successfully applied to preconcentrate and determine SDS in environmental water samples, including tap water and industrial wastewaters from detergent and textile factories yielding satisfactory results.

十二烷基硫酸钠(SDS)是一种广泛使用的阴离子表面活性剂,对生物有很大的毒性风险。本研究提出了一种环境友好的综合测定水样中SDS的方法。采用胺功能化介孔二氧化硅磁性纳米复合材料进行磁分散微固相萃取,结合离子对液-液萃取(MD-μSPE/ILLE),再结合可见分光光度法进行检测。该方法可实现水样中SDS的有效预富集和灵敏检测。采用XRD、BET、FT-IR、SEM、TEM和VSM等方法对合成的纳米复合材料(Fe3O4@SiO2@Kit-6-NH2)进行了表征。为了优化SDS的提取,采用田口正交设计(OA16)系统评价了样品体积、pH、吸附剂质量、接触时间和离子强度等实验因素对SDS提取的影响。方差分析表明,离子强度(58.24%)是影响SDS吸附的最主要因素,其次是吸附剂质量(19.78%)、样品体积(12.09%)和接触时间(7.58%)。在样品体积为120 mL、吸附剂用量为1.0 g L−1、pH为3、不添加盐的条件下,SDS提取效率最高。吸附步骤完成后,优化SDS解吸条件,选择蒸馏水为最佳洗脱液。MD-µSPE/ILLE方法具有良好的分析性能,线性范围为2.0 ~ 200.0µg L−1 (R2 = 0.9924),检出限为0.55µg L−1,增强因子为240.0,相对标准偏差(RSD %)为1.7%。该方法已成功地应用于自来水、洗涤剂和纺织厂的工业废水等环境水样中的SDS预浓缩和测定,结果令人满意。
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引用次数: 0
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