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The Notability of Silicon Nanowires in Optoelectronic, Environment and Health 硅纳米线在光电、环境和健康领域的重要性
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-19 DOI: 10.1007/s12633-024-03110-9
Mehdi Rahmani, Mohamed-Ali Zaïbi

Silicon nanowires are part of nanostructures, characterized by a high surface to volume ratio or large aspect ratio (AR), between 10 and 104. The new physicochemical properties of SiNWs compared to those of planar silicon are inevitable parameters for involving these nanostructures in the fields of nanotechnology, environment, medicine, pharmacy and others. Nevertheless, the passivation of nanowires by metal nanoparticles or a suitable semiconductor enhances their photocatalytic activities. Likewise, the addition of appropriate organic compounds improves the sensor of these nanostructures. In this paper, we first summarize an overview bottom-up and top-down production of silicon nanowires, and then the advantages and drawbacks of each method are described. Some potential implications of SiNWs in optoelectronics, photocatalysts and biosensors have been detailed. In each application, the main elements of enhancement of the composite-based on silicon nanowires covered with metal nanoparticles or functionalized with an organic compound are discussed.

Graphical Abstract

Research Highlights

1- MACE technique for SiNWs elaboration

2- Catalytic and photocatalytic efficiency of silicon nanowires

3- The effect of metal nanoparticles covered nanowires of silicon on catalytic and photocatalytic efficiency

4- The effect of sunlight on photocatalytic efficiency

5- The functionalization of nanowires by specific organic compounds to the cure of certain human diseases

6- The physicochemical properties of SiNWs and the origin of their involvement to produce probes immobilizing DNA on the surface

7- The implication of SiNWs in Schottky diodes (SD) and organic Schottky diodes (OSD)

8- The effect of organic molecules in the SiNWs layer

硅纳米线是纳米结构的一部分,其特点是高表面体积比或大高宽比(AR),介于 10 和 104 之间。与平面硅相比,硅纳米线具有新的物理化学特性,这是将这些纳米结构应用于纳米技术、环境、医学、制药等领域的必然参数。不过,用金属纳米颗粒或合适的半导体对纳米线进行钝化,可以增强其光催化活性。同样,添加适当的有机化合物也能提高这些纳米结构的传感器性能。本文首先概述了自下而上和自上而下生产硅纳米线的方法,然后介绍了每种方法的优缺点。我们还详细介绍了硅纳米线在光电子学、光催化剂和生物传感器方面的一些潜在影响。在每种应用中,都讨论了基于硅纳米线包覆金属纳米颗粒或有机化合物功能化的复合材料的主要增强要素。图解摘要研究亮点1- 用于硅纳米线制备的 MACE 技术2- 硅纳米线的催化和光催化效率3- 金属纳米颗粒覆盖硅纳米线对催化和光催化效率的影响4- 阳光对光催化效率的影响5- 纳米线的功能化研究用特定有机化合物对纳米线进行功能化以治疗某些人类疾病6- 硅纳米线的理化特性及其参与生产表面固定 DNA 的探针的起源7- 硅纳米线在肖特基二极管(SD)和有机肖特基二极管(OSD)中的作用8- 硅纳米线层中有机分子的影响
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引用次数: 0
Metal Doped Nanocages and Metal Doped Nanotubes as Effective Catalysts for ORR and OER 掺金属纳米笼和掺金属纳米管作为 ORR 和 OER 的有效催化剂
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-16 DOI: 10.1007/s12633-024-03101-w
Mohamed J. Saadh, Mohammed Ahmed Mustafa, Qusay Husam Aziz, Anupam Yadav, Mandeep Kaur, Khalid Mujasam Batoo, Muhammad Farzik Ijaz, Salim B. Alsaadi, Eftikhaar Hasan Kadhum, Ahmed Read Al-Tameemi, Khaldoon T. Falih, Laith H. Alzubaidi, Irfan Ahmad

Here, the abilities of Fe-Si42, Fe-Al21N21, Cu-C60, Cu-B30P30, Fe-SiNT(9, 0), Fe-AlNNT(9, 0), Cu-CNT(6, 0) and Cu-BPNT(6, 0) as nano-catalysts of OER and ORR processes are investigated in alkaline environment. The calculated formation energy of Fe- and Cu-doped nanocages and Fe- and Cu-doped nanotubes (Fe-Si42, Fe-Al21N21, Fe and Cu doped nanotubes) are acceptable values and these structures are stable. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) have higher capacity for adsorption of OER/ORR species than other studied catalysts. The *OH removal and *OOH formation on Fe-Si42, Fe-Al21N21, Fe and Cu doped nanotubes are potential-determining steps for OER/ORR processes in alkaline environment. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) catalysts for OER/ORR processes have lower over-potential than other studied catalysts. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) as effective catalysts are suggested to catalyze the OER/ORR processes in alkaline environment.

本文研究了 Fe-Si42、Fe-Al21N21、Cu-C60、Cu-B30P30、Fe-SiNT(9, 0)、Fe-AlNT(9, 0)、Cu-CNT(6, 0) 和 Cu-BPNT(6, 0) 在碱性环境中作为 OER 和 ORR 过程的纳米催化剂的能力。计算得出的掺铁和掺铜纳米笼以及掺铁和掺铜纳米管(Fe-Si42、Fe-Al21N21、掺铁和掺铜纳米管)的形成能都是可接受的值,而且这些结构是稳定的。与其他研究的催化剂相比,Fe-AlNNT(9,0)和 Cu-BPNT(6,0)对 OER/ORR 物种的吸附能力更高。Fe-Si42、Fe-Al21N21、Fe 和 Cu 掺杂纳米管上*OH 的去除和*OOH 的形成是碱性环境中 OER/ORR 过程的潜在决定性步骤。用于 OER/ORR 过程的 Fe-AlNNT(9, 0) 和 Cu-BPNT(6, 0) 催化剂的过电位低于其他已研究过的催化剂。建议将 Fe-AlNNT(9, 0) 和 Cu-BPNT(6, 0) 作为有效催化剂,用于催化碱性环境中的 OER/ORR 过程。
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引用次数: 0
Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance 基于电荷等离子概念的垂直双栅极硅-锗异质结无掺杂 TFET,可增强模拟性能
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-15 DOI: 10.1007/s12633-024-03111-8
Gaurav Gupta, Sanjeev Rai

This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as ION as high as (approx) 80µA/µm along with an ION/IOFF ratio of 6.784 × 1012 and a cut-off frequency (fT) being equal to 64.7 GHz.

本文研究了一种垂直生长的双栅硅沟道和锗源无掺杂 TFET,采用了电荷等离子体概念,以提高模拟性能。在隙下区使用的锗层显著改善了器件特性。为了研究垂直硅-锗异质结无掺杂 (VHJDL) TFET 器件的直流性能、模拟/射频性能和各种非理想状态,采用了校准数值模拟器。此外,还通过改变不同的结构参数检验了器件性能,并研究了寄生现象。仿真结果表明,VHJDL TFET 器件可以实现理想的模拟和数字性能,如 ION 高达 80µA/µm,ION/IOFF 比为 6.784 × 1012,截止频率 (fT) 等于 64.7 GHz。
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引用次数: 0
A Low Energy Loss Superjunction LIGBT with Integrated Double Self-Biased MOS 集成双自偏压 MOS 的低能量损耗超结 LIGBT
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-14 DOI: 10.1007/s12633-024-03112-7
Ao Wu, Weizhong Chen, Xiangwei Zeng, Zikai Wei, Yufan Xiao

A novel Superjunction LIGBT with integrated planar Self-Biased PMOS (abbrev.SBP) and planar Self-Biased NMOS (abbrev.SBN), named DM-SJ-LIGBT is proposed and investigated. The SBN is connected in parallel with the main Gate, thus it is adaptively turned on and turned off with the main Gate. The gate and drain of SBP are shorted together to emitter electrode, and the P-pillar work as the source of SBP. Consequently, the SBP could realize adaptively turned on and turned off ability without additional gate signal control .At the forward conduction state, the planar SBN and trench main Gate are turned on with double electron channel, thus it effectively reduce ({V}_{ON}) compared with the conventional SJ-LIGBT. However, the SBP is turn-off state with ({V}_{GS,P}>{V}_{TH,P}). At the turn off state, The SBP is automatically turned on to extract the holes when the ({V}_{GS,P}<{V}_{TH,P}), which reduces the turn-off loss ({E}_{OFF}) significantly. Consequently, the DM-SJ-LIGBT obtains a superior trade-off relationship between forward conduction voltage ({V}_{ON}) and ({E}_{OFF}) . At the same ({E}_{OFF}) of 0.61 mJ/(cm^2), the ({V}_{ON}) of the DM-SJ-LIGBT with ({T}_{SBN}) =100nm and the DM-SJ-LIGBT with ({T}_{SBN}) =50 nm is 11% and 22% lower than the conventional SJ-LIGBT, respectively. Moreover, When ({V}_{ON}) is 1.36 V, the ({E}_{OFF}) of the DM-SJ-LIGBT with ({T}_{SBN})=100nm and the DM-SJ-LIGBT with ({T}_{SBN})=50 nm are 0.354 and 0.147 mJ/(cm^2) respectively, which is 42% and 76% less than that of the conventional SJ-LIGBT.

我们提出并研究了一种新型超结 LIGBT,它集成了平面自偏压 PMOS(简称 SBP)和平面自偏压 NMOS(简称 SBN),命名为 DM-SJ-LIGBT。SBN 与主栅极并联,因此能与主栅极一起自适应地开启和关闭。SBP 的栅极和漏极与发射极短路,而 P 柱则作为 SBP 的源极工作。因此,无需额外的栅极信号控制,SBP 就能实现自适应开启和关闭。在正向传导状态下,平面 SBN 和沟槽主栅极通过双电子通道开启,因此与传统的 SJ-LIGBT 相比,它能有效地降低 ({V}_{ON})。然而,SBP 在关断状态时会产生 ({V}_{GS,P}>{V}_{TH,P})。在关断状态,当 ({V}_{GS,P}<{V}_{TH,P}) 时,SBP 会自动打开以提取孔,这就大大降低了关断损耗 ({E}_{OFF})。因此,DM-SJ-LIGBT 在正向导通电压 ({V}_{ON}) 和 ({E}_{OFF}) 之间获得了出色的权衡关系。在0.61 mJ/(cm^2)的相同({E}_{OFF})条件下,({T}_{SBN})=100nm的DM-SJ-LIGBT和({T}_{SBN})=50nm的DM-SJ-LIGBT的({V}_{ON})分别比传统的SJ-LIGBT低11%和22%。此外,当({V}_{ON})为1.36 V时,({E}_{OFF})为100 nm的DM-SJ-LIGBT和({T}_{SBN})为50 nm的DM-SJ-LIGBT的({E}_{OFF})分别为0.354 mJ/(cm^2)和0.147 mJ/(cm^2),比传统的SJ-LIGBT分别低42%和76%。
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引用次数: 0
Comparative Analysis of Cure Behaviors, Mechanical Properties, and Swelling Resistance in EPDM/SBR Composites with HNTs, APTES-Modified HNTs, and RH-Modified HNTs 含有 HNT、APTES 改性 HNT 和 RH 改性 HNT 的 EPDM/SBR 复合材料的固化行为、机械性能和抗膨胀性对比分析
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-14 DOI: 10.1007/s12633-024-03117-2
A. Arunkumar, S. R. Venkataraman, S. Vishvanathperumal, V. Navaneethakrishnan

Rubber blending is a prominent technique for enhancing properties in final rubber products. This study investigates the interplay of filler concentration and surface modification in EPDM/SBR blend composites with halloysite nanotubes (HNTs). The effects of γ-Aminopropyltriethoxysilane (APTES) and resorcinol-hexamethylenetetramine (RH) modifiers were examined. Comparing rubber blend composites with modified and unmodified HNTs, the findings reveal significant enhancements using RH-modified HNTs. These composites outperform those with APTES-modified and unmodified HNTs, notably improving mechanical properties. The addition of fillers increases crosslink density and filler-rubber interaction, reducing mole percent uptake. These trends result in significantly improved abrasion resistance in the composites. FESEM images show that RH-modified HNTs have superior distribution compared to APTES-modified and unmodified HNTs, highlighting their effective interaction and dispersion. These findings can guide the optimization and production of outdoor applications.

橡胶混合是提高最终橡胶产品性能的一项重要技术。本研究探讨了三元乙丙橡胶/丁苯橡胶与哈洛石纳米管(HNTs)共混复合材料中填料浓度和表面改性的相互作用。研究考察了γ-氨基丙基三乙氧基硅烷(APTES)和间苯二酚-六亚甲基四胺(RH)改性剂的效果。通过比较使用改性 HNT 和未改性 HNT 的橡胶共混复合材料,研究结果表明使用 RH 改性 HNT 可显著提高性能。这些复合材料的性能优于使用 APTES 改性和未改性 HNT 的复合材料,显著提高了机械性能。填料的添加增加了交联密度和填料与橡胶的相互作用,降低了吸收摩尔百分比。这些趋势大大提高了复合材料的耐磨性。FESEM 图像显示,与 APTES 改性和未改性的 HNT 相比,RH 改性的 HNT 具有更优越的分布,突显了其有效的相互作用和分散性。这些发现可为户外应用的优化和生产提供指导。
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引用次数: 0
Synergistically Improving Tracking Resistance of Addition-Cure Liquid Silicone Rubber with Aminepropyltriethoxysilane-Immobilized Silica and Platinum Catalyst 用胺丙基三乙氧基硅烷固定化白炭黑和铂催化剂协同改善加成硫化液体硅橡胶的抗跟踪性能
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-10 DOI: 10.1007/s12633-024-03108-3
Ye Wei, Yiming Liao, Xuejun Lai, Hongqiang Li, Wanjuan Chen, Xingrong Zeng

The tracking-resistant silicone rubber with superior water resistance is very essential for outdoor high-voltage transmission field. In this work, aminepropyltriethoxysilane-immobilized silica (APTES-SiO2) was prepared through dehydration condensation between the ethoxy groups of aminepropyltriethoxysilane (APTES) and hydroxyl groups on the SiO2 surface. The effects of APTES-SiO2 on the vulcanization, mechanical properties, thermal stability and tracking resistance of addition-cure liquid silicone rubber (ALSR) were studied. The results revealed that APTES-SiO2 and platinum catalyst (Pt) synergistically improved the tracking resistance of ALSR, and APTES-SiO2/ALSR also possessed excellent water resistance. When the content of APTES and Pt was 0.15 phr (parts per hundreds of rubber) and 15 ppm (parts per million), respectively, APTES-SiO2/ALSR reached 1A4.5 level. Furthermore, the tracking resistance of ALSR showed little deterioration even after immersion in water for 30 days. The results of thermogravimetry (TG) and thermogravimetry-Fourier transform infrared spectroscopy (TG-FTIR) indicated that APTES-SiO2 and Pt synergistically promoted the radical crosslinking of ALSR chains at high temperature, which was favorable to the formation of compact ceramic protected layer, thus significantly improved the tracking resistance of ALSR.

Graphical Abstract

具有优异防水性能的耐跟踪硅橡胶对于户外高压输电领域非常重要。本研究通过胺丙基三乙氧基硅烷(APTES)的乙氧基与二氧化硅表面羟基的脱水缩合,制备了胺丙基三乙氧基硅烷固定化二氧化硅(APTES-SiO2)。研究了 APTES-SiO2 对加成硫化液体硅橡胶 (ALSR) 的硫化、机械性能、热稳定性和耐跟踪性的影响。结果表明,APTES-SiO2 和铂催化剂(Pt)能协同改善 ALSR 的耐跟踪性,APTES-SiO2/ALSR 还具有优异的耐水性。当 APTES 和 Pt 的含量分别为 0.15 phr(百分之一)和 15 ppm(百万分之一)时,APTES-SiO2/ALSR 达到了 1A4.5 级。此外,即使在水中浸泡 30 天,ALSR 的耐跟踪性也几乎没有下降。热重分析(TG)和热重分析-傅立叶变换红外光谱(TG-FTIR)的结果表明,APTES-SiO2 和铂在高温下协同促进了 ALSR 链的自由基交联,有利于形成致密的陶瓷保护层,从而显著提高了 ALSR 的耐跟踪性。
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引用次数: 0
Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors 非晶态 Si-Zn-Sn-O 钝化层对 Si-In-Zn-O 薄膜晶体管的影响
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-08 DOI: 10.1007/s12633-024-03105-6
Sandeep Kumar Maurya, Sang Yeol Lee

Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the channel and contact resistance between the electrode and channel were determined using transmission line method (TLM). Precisely deposited thin films via RF sputtering at room temperature, our TFTs, equipped with a bottom gate top contact and processed at 500 (^{circ })C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm(^2)V(^{-1})s(^{-1}), a current on/off ratio of approximately 10(^9), and a subthreshold swing (SS) value below 0.45 V decade(^{-1}). Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology.

双层薄膜晶体管(TFT)的制造提高了场效应迁移率和稳定性。这些 TFT 具有独特的沟道结构,包括介电层、非晶-Si-In-Zn-O (a-SIZO) 层和非晶-Si-Zn-Sn-O (a-SZTO) 层。利用传输线法(TLM)测定了通道的总电阻以及电极和通道之间的接触电阻。在室温下通过射频溅射精确沉积薄膜,我们的 TFT 配备了底栅顶部触点,并在 500 (^{circ })C 的温度下加工,表现出了卓越的特性。它们展示了超过 30 cm(^2)V(^{-1})s(^{-1}) 的高迁移率、大约 10(^9) 的电流导通/关断比,以及低于 0.45 V decade(^{-1}) 的亚阈值摆幅(SS)值。此外,这些双层 TFT 在负偏压和正偏压应力下均表现出稳定性,这表明它们具有在各种应用中实现可靠性能的潜力,并有望推动 TFT 技术的发展。
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引用次数: 0
Correction to: Si48, SiNT(7, 0), B24N24 and BNNT(7, 0) as Acceptable Anode Materials in Mg-ion Batteries 更正:将 Si48、SiNT(7, 0)、B24N24 和 BNNT(7, 0) 作为可接受的镁离子电池阳极材料
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-06 DOI: 10.1007/s12633-024-03106-5
Tariq J. Al-Musawi, Farag M. A. Altalbawy, Iman Samir Alalaq, Raquel Virginia Colcha Ortiz, Rohit Sharma, Muyassar Norberdiyeva, Mamata Chahar, Usama S. Altimari, Sadeq K. Thajeel, Merwa Alhadrawi, Yuan Liu
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引用次数: 0
Damage Mechanism to Silicon Anode Due to Dissolved Manganese Ions from Cathode in Lithium Ion Batteries 锂离子电池中阴极溶解的锰离子对硅阳极的破坏机制
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-06 DOI: 10.1007/s12633-024-03107-4
Yingying Zeng, Xiuguang Yi, Haihui Chen, Limin Liu

It is still unknown how dissolved manganese ions affect the silicon anode's electrochemical performance in the lithium-ion batteries (LIBs). In this study, the damage mechanism of Mn2+ to silicon electrode in LIBs was studied by adding Mn2+ into electrolyte system to simulate the electrochemical environment. Through the comparison between full cell and half cell, the mechanism of the capacity fading of silicon electrode is revealed. In order to compare the amount of SEI growth of silicon anode during cycling, the heat flux of SEI was analyzed by DSC. Experiments shows that Mn2+ could make SEI more fragile, more easily break, and then accelerate the SEI thickening. So Mn2+ could reduce the Coulomb efficiency and electrochemical capacity of the silicon-based electrode. The galvanostatic cycle current is 300 mA/g. The half cell's Coulomb efficiency exceeds 97%, whereas the whole cell's Coulomb efficiency is only 32% after 100 cycles. In addition to the damage of the Mn2+ to silicon anode, the depletion of active lithium ion source in full cell is also an important reason for the rapid decline of electrochemical capacity.

溶解的锰离子如何影响硅负极在锂离子电池(LIB)中的电化学性能,目前仍是一个未知数。本研究通过在电解液体系中加入 Mn2+ 来模拟电化学环境,研究了 Mn2+ 对锂离子电池中硅电极的破坏机制。通过全电池和半电池的比较,揭示了硅电极容量衰减的机理。为了比较硅阳极在循环过程中 SEI 的生长量,利用 DSC 分析了 SEI 的热通量。实验表明,Mn2+ 会使 SEI 更脆弱,更容易断裂,进而加速 SEI 的增厚。因此,Mn2+ 会降低硅基电极的库仑效率和电化学容量。电静电循环电流为 300 mA/g。半电池的库仑效率超过 97%,而整个电池的库仑效率在 100 次循环后仅为 32%。除了 Mn2+ 对硅阳极的破坏外,全电池中活性锂离子源的耗竭也是电化学容量迅速下降的重要原因。
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引用次数: 0
Potency of Silicon for Enhanced Rice Productivity: A Revelation for Global Food Security 硅对提高水稻产量的作用:全球粮食安全的启示
IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Pub Date : 2024-08-03 DOI: 10.1007/s12633-024-03102-9
G. Srivani, G. Senthil Kumar, M. Janaguiraman, P. Murali Arthanari, P. Malathi, R. Sathya Priya, N. Jagathjothi, M. Yuvaraj, P. Parasuraman

In the current era, a wide range of biotic and abiotic stresses are becoming more prevalent across the globe, which can limit the growth of plants, especially the prime crops. Silicon (Si) fertilizer is known as an ecologically compatible and biologically approachable technique for enhancing rice crop resilience to various stresses. This review comprehensively explores the standpoint of silica fertilizers focusing on their multifaceted roles in improving plant health, stress tolerance, optimizing rice productivity and sustainability. Silica, in the form silicic acid is actively absorbed by rice roots through transporters such as LSi1, LSi2, and LSi3 then transported within root cells via diffusion. This movement is essential for stress mitigation, as silicon deposition in various tissues forms a protective barrier against pest and diseases. In rice cultivation silica is crucial for enhancing structural integrity, disease resistance and stress tolerance, ultimately contributing to more robust plants and improved yield. Silica enriches enzyme activity, particularly antioxidant enzymes like superoxide dismutase (SOD), catalase anhydrase and IAA oxidase contributing to stress tolerance with improved productivity. Its deposition within plant tissues strengthens cell walls, fortifies defences against pathogens and enables better adaptation to environmental fluctuations, ensuring the resilience and productivity of these vital crops. Si effect on mitigating biotic stresses including rice stem borer, leaf folder, sheath blight and blast by triggering physical and biochemical defence mechanisms; abiotic stresses, frequent in rice crop like salinity, drought, and heavy metal toxicity by improving osmotic adjustment, safeguarding ion homeostasis, and reducing oxidative damage.

当今时代,各种生物和非生物胁迫在全球范围内变得越来越普遍,这可能会限制植物的生长,尤其是主要农作物。众所周知,硅(Si)肥是一种生态兼容、生物可及的技术,可增强水稻作物对各种胁迫的抗逆性。本综述从硅肥的角度进行了全面探讨,重点关注硅肥在改善植物健康、提高抗逆性、优化水稻生产力和可持续性方面的多方面作用。硅酸形式的二氧化硅通过 LSi1、LSi2 和 LSi3 等转运体被水稻根系积极吸收,然后通过扩散作用在根系细胞内进行运输。由于硅沉积在各种组织中,形成了抵御病虫害的保护屏障,因此这种移动对缓解压力至关重要。在水稻栽培中,二氧化硅对增强结构完整性、抗病性和抗逆性至关重要,最终可使植株更加健壮,提高产量。白炭黑能增强酶的活性,特别是超氧化物歧化酶(SOD)、过氧化氢酶和 IAA 氧化酶等抗氧化酶,有助于提高抗逆性和产量。它在植物组织中的沉积可强化细胞壁,增强对病原体的防御能力,并能更好地适应环境波动,确保这些重要作物的抗逆性和生产力。通过触发物理和生化防御机制,Si 可减轻生物胁迫,包括水稻螟虫、叶夹病、鞘枯病和稻瘟病;通过改善渗透调节、保障离子平衡和减少氧化损伤,可减轻非生物胁迫,如水稻作物中常见的盐度、干旱和重金属毒性。
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引用次数: 0
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