Silicon nanowires are part of nanostructures, characterized by a high surface to volume ratio or large aspect ratio (AR), between 10 and 104. The new physicochemical properties of SiNWs compared to those of planar silicon are inevitable parameters for involving these nanostructures in the fields of nanotechnology, environment, medicine, pharmacy and others. Nevertheless, the passivation of nanowires by metal nanoparticles or a suitable semiconductor enhances their photocatalytic activities. Likewise, the addition of appropriate organic compounds improves the sensor of these nanostructures. In this paper, we first summarize an overview bottom-up and top-down production of silicon nanowires, and then the advantages and drawbacks of each method are described. Some potential implications of SiNWs in optoelectronics, photocatalysts and biosensors have been detailed. In each application, the main elements of enhancement of the composite-based on silicon nanowires covered with metal nanoparticles or functionalized with an organic compound are discussed.
Graphical Abstract
Research Highlights
1- MACE technique for SiNWs elaboration
2- Catalytic and photocatalytic efficiency of silicon nanowires
3- The effect of metal nanoparticles covered nanowires of silicon on catalytic and photocatalytic efficiency
4- The effect of sunlight on photocatalytic efficiency
5- The functionalization of nanowires by specific organic compounds to the cure of certain human diseases
6- The physicochemical properties of SiNWs and the origin of their involvement to produce probes immobilizing DNA on the surface
7- The implication of SiNWs in Schottky diodes (SD) and organic Schottky diodes (OSD)
8- The effect of organic molecules in the SiNWs layer