Silicon最新文献

In this study, V₂O₅ and Bi₂O₃ nanoparticles were synthesized using a hydrolysis method and simple chemical method respectively. PSi was prepared by electrochemical etching method. The samples were characterized by X-ray diffraction (XRD), Atomic force microscopy (AFM), Scanning electron microscope (SEM), ultra violet-visible (UV–Vis), Fourier transform infrared (FTIR) and PL emission. From X-ray pattern of PSi, it observed a strong peak of (PSi) at 2θ = 69.04 and 69.24 is confirming the mono-crystalline structure of the Si layer. from AFM of freshly prepared porous silicon found the surface form like hillocks with un-uniform different heights surface. with RMS roughness (Sq): 3.62 nm, Mean roughness (Sa): 2.43 nm and Maximum height (Sz): 61.39. it was a single peak emission at 647 nm was due to PSi nano-crystalline. FTIR spectrum identified the most important functional groups involved in the formation of PSi. The mean crystalline size of V₂O₅ and Bi₂O₃ nanoparticles was found to be around (19.70 and 28.57) nm. The morphology of the synthesized V₂O₅. and Bi₂O₃ NPs was observed exhibits lamellar structure with diameters 68.08 nm and 32.18 nm respectively. FTIR spectrum identified the most important functional groups involved in the formation of V₂O₅ and Bi₂O₃. The optical band gap of V₂O₅-NPs was found to be 3 eV and Bi₂O₃ NPs was (4.52 eV). The efficiency of the fabricated solar cell was found to be 1.38% and filling factor 20.62%.

In the current scenario, biotic and abiotic pressures driven by climate change pose serious obstacles to sugarcane cultivation and highly risk for global production. Silicon (Si), a quasi-essential element has been shown to significantly increase sugarcane productivity and related attributes under stressful conditions. Si-transporters such as LSi1, LSi2, and LSi6 are found in the sugarcane roots that essential for intake, transport, and accumulation of Si within the plants. Since, Si deposition creates a barrier against pests and diseases in sugarcane tissues, this movement is crucial for reducing stressors, consequently rate of photosynthesis, LAI, DMP, shoot count and biomass output was enhanced. In seedling and tillering stages of sugarcane, Si application increased the activity of enzymes hydrogen peroxide (H₂O₂), malondialdehyde (MDA), and superoxide dismutase (SOD), while peroxidase activity (POD) was decreased. This led to buildup of reactive oxygen species (ROS), which in turn prompted defence response. But at the jointing stage, MDA and H₂O₂ levels dropped while, SOD and POD activity increased all of which helped to remove excessive ROS. Si may regulate chitinase, β-1,3 glucanase, polyphenoloxidase (PPO), and phenylalanine ammonia-lyase (PAL); additionally, phenol and lignin amounts of sugarcane leaves were noticeably higher. Si improved the bacterial network in the rhizosphere soil, which might have facilitated the growth at critical stage of sugarcane. Si enhanced antimicrobial activity resulted in a twofold impact for suppression of bacteria Leuconostoc spp in post-harvest deterioration losses and also regulated the sucrose inversion process. At the molecular level, Si is essential for reducing metal phytotoxicity through the transcriptional alteration of phytochelatin genes and metal transporters. It also offers insightful information about the ways in which Si functions through an in-depth assessment of sugarcane and it helps researchers, agronomists, and policymakers develop sustainable strategies that will ensure the productivity and resilience of sugarcane in a context of changing environmental hardships.

This study explores γ-radiations shield character of select Si-based orthorhombic crystals, specifically CaSrSi, BaMgSi, MgAlSi, and MgSrSi, to assess their potential for γ-ray shielding applications. Utilizing Hirshfeld topological geometries (HTGs), investigation of the structural and compositional characteristics that contributes to these materials' effectiveness in attenuating high-energy photons. By analyzing the essential parameters such as the MAC, LAC, and Z_eff, the study demonstrate that BaMgSi crystal, in particular, exhibits a superior capacity for radiation attenuation due to its higher MAC ∈ [0.039, 48.280] cm².g⁻¹, LAC ∈ [0.144, 179] cm⁻¹ and Z_eff ∈ [37, 48] values in the studied energy range. The findings reveal a correlation between charge densities of HTGs and LAC values, indicating that the optimization of these topological parameters enhances the materials' shielding performance. The study highlights the potential of these crystals for various applications where effective radiation shielding is crucial. This research provides important prospective into designing of advanced crystals with improved attenuation capabilities for future innovations in radiation protection technologies.

Rice husk ash (RHA), obtained through pyrolysis of rice husk (RH), is primarily composed of silicon dioxide (SiO₂). However, a conventional thermal treatment produces harmful byproducts, that can pollute the environment and harm biological health. Meanwhile, energy consumption hinders scaling up a conventional producing technique. Here, an electron-assisted thermal decomposition (EATD) technology was developed to obtain silicon dioxide (SiO₂), which included two mixed crystal phases: cristobalite and tridymite. The influence of temperature on the SiO₂ structure was examined through the various structural characterizations. Based on the experimental findings, we emphasized that the EATD process induced specific structural phase and glass transition owning to the radiated heat system. Notably, the prepared samples displayed the ability as a chemical sensor for Cr⁶⁺ and photocatalyst for methylene blue (MB) degradation. This unique characteristic improved the detection signal for Cr⁶⁺ by at least twofold, resulting in a streamlined detection technique that reduced the risk of secondary pollution.

The goal of this work is to improve the optical and structural properties of titanium nitride(TiN)- silica(SiO₂) promising nanoceramic doped polystyrene (PS) to apply in flexible nanoelectronics and optical fields. The films of (PS-TiN-SiO₂) were produced utilizing the casting process. The structure, and optical properties of (PS-TiN-SiO₂) nanostructures were examined. The structure characteristics of (PS-TiN-SiO₂) nanostructures were tested using FTIR and optical microscope(OM). The OM images confirmed the good dispersion of (TiN-SiO₂)NPs throughout the (PS) matrix, whilst the FTIR revealed a physical relationship between the polymer (PS) and the nanoparticles. The optical characteristics were examined at wavelengths (λ = 320-920nm). The study found that when TiN-SiO₂ NPs reaching 2.8 wt%, the absorbance increased of 32.8% and transmission decreased of 11.3% at wavelength(360 nm), making them perfect for various optical fields. When TiN-SiO₂ NPs concentration reached of 2.8 wt%, the energy gap of PS decreased to 2.53eV and refractive index increased from 2 to 2.24 making (PS-TiN-SiO₂) nanostructures ideal for optoelectronics nanodevices. As the concentration of TiN-SiO₂ NPs rises, the other optical parameters(absorption coefficient, extinction coefficient, real and imaginary dielectric constants, and optical conductivity) were increased. Finally, the results confirmed that the (PS-TiN-SiO₂) nanostructures may be considered as a future nanosystems to exploit in a variety of potential nanoelectronics and optics applications.

The glass system with the compositions (15SiO₂-75B₂O₃- (10-x)MgO-xBi₂O₃, (x) = ((0le) x (ge 10)) in mol% has been formulated with the conventional melt quenching procedure. The amorphous character was verified with XRD. As an increase of Bi₂O₃ the ((rho)) increased from 2.88 to 4.97 g/cm³ and (({V}_{m})) declined from 22.66 to 21.69 cm³/ mol. The ultrasonic velocities were measured to evaluate elastic moduli. Using the theoretical Makishima-Mackenzie model to calculate elastic moduli provides a valuable tool for confirming the experimental results. Using the Phy-X tool, the radiation shielding properties were theoretically estimated. Evaluations have been done on linear and mass attenuation coefficients (MAC and LAC), the effective atomic number (Zeff), and electronic density (Neff). The observation was that shielding parameters are influenced by the concentration of Bi₂O₃ and photon energy. The observation was that MgBi-10 exhibited the highest density, highest elastic moduli, and highest radiation shielding factors such as (MAC), (LAC), (Zeff), and (Neff) among the glass samples. The observation was that the glass sample with 10 mol% Bi₂O₃ doping (MgBi-10) exhibited the best overall properties for both mechanical and radiation shielding applications.

This article presents a comprehensive topological analysis of Mostar-type indices and entropy measures applied to Silicon Dioxide ((SiO_{2})) and nanostructures. To characterize the complexity and variety within (SiO_{2}) and other nanostructures, this research looks into the calculation of Mostar-type indices, a unique mathematical framework, and entropy metrics. This work presents a thorough investigation of the atomic arrangements and information content inherent in these materials by using cutting-edge computational tools and algorithms. The measurement of complex molecular structures can be achieved through the correlation of entropy with graphs. Various graph entropies have been proposed in the literature. This study introduces novel graph entropies that utilize bond additive indices to assess network and graph peripherality. Specifically, we calculated the Mostar type indices, Mostar entropy, edge Mostar entropy, and total Mostar entropy for molecular structures such as (SiO_{2}), (C_{8}) layer structure, and melem chain nanostructure. Moreover, analytical expressions for these entropies were derived using the cut method.

In this work, the potential of nanocages (Cu-C₈₄ and Cu-Si₈₄) and nanotubes (Cu-CNT(9, 0) and Cu-SiNT(9, 0)) for SO₂ hydro-desulfurization to produce the H₂S are examined via acceptable mechanisms. The ∆E_adoption and ∆E_formation of Cu-C₈₄, Cu-Si₈₄, Cu-doped C and Si nanotubes (9, 0) are acceptable values to confirm the stability of nanostructures. The ∆E_adsorption of SO₂, SO, S, O, SH, OH, H₂S and H₂O on Cu-C₈₄ are -4.38, -3.75, -2.68, -3.03, -0.14, -0.06, -0.21 and -0.10 eV, respectively. The H₂O and H₂S molecules are desorbed from nanostructures, physically. The ∆E_formation of Cu-C₈₄, Cu-Si₈₄, Cu-doped C and Si nanotubes (9, 0) are -2.91, -3.06, -3.39 and -3.46 eV, respectively. Results indicated that the hydrogenation of S* has more negative ΔG_reaction than hydrogenation of O* on Cu-C₈₄, Cu-Si₈₄, Cu-doped C and Si nanotubes (9, 0), significantly. The hydrogenation of S* has lower E_activation than hydrogenation of O* on surfaces of catalysts. The ΔG_reaction of S → SH → H₂S reaction on Cu-Si₈₄ and Cu-doped Si nanotube (9, 0) are more negative than Cu-C₈₄ and Cu-doped C nanotube (9, 0). Finally, the Cu-doped C and Si nanotubes (9, 0) as effective nano-catalysts for SO₂ hydro-desulfurization to H₂S production are proposed with high performance.

In order to investigate the effect of P content on the growth morphology and growth mode of the Si phase, the Al-60%Si alloys containing 0.5%P and 1.0%P were subjected to deep undercooling using an electromagnetic levitator. The morphology evolution and growth mode of the Si phase were studied by analyzing the dynamic images recorded by HSV and the SEM images of as-solidified samples. The results reveal that the morphology of the Si phase transformed from the large strip shape to coarse bulks and regularly arranged dendrites, then to spheroidal and rod-shaped with increase of undercooling, and the corresponding growth mode changed from faceted growth to mixed growth, then to non-faceted growth. The P refines the size of the Si phase by enhancing the nucleation rate of the Si phase. With the increase of P content, the critical undercoolings of growth mode transition decrease, and the experimental results are in good agreement with the theoretical predicted results.

We have investigated the impact of non-thermal plasma jet (NTPJ) on porous silicon (Psi) nanostructures prepared by photoelectrochemical etching (PECE) and subsequently studied this effect on the performance of the PSi-based photodetectors, where the influence of a non-thermal plasma jet on a porous silicon surface has not been examined in any previous study. PSi samples were treated with 12, 14, and 16 kV voltages by a non-thermal plasma jet for a fixed fluence duration of 12 min. The X-ray diffraction (XRD) pattern reveals that the size of porous silicon crystallized increased from 28.6 nm to 75.0 nm when the plasma voltage was raised to 16 kV. Field emission scanning electron microscopes (FE-SEM) images revealed that the gray, mud-like, and dark porous sample turned into a tending black and more porous surface, and the treatment by plasma altered the top surface of the porous layer only without causing any damage to the sample. The study of atomic force microscopy (AFM) images showed that the surface roughness RMS, roughness average Sa, and the top ten highest roughness Sz of porous silicon increased from 1.50, 1.10, and 13.7 nm to 5.21, 3.69, and 64.59 nm, respectively, after treated at 16 kV plasma voltage. Raman scattering spectra of treated materials show visible photoluminescence and an infrared shift due to plasma treatment of porous silicon PSi, with a crystalline structure band at 548 cm⁻¹. The photoluminescence (PL) spectrum shows multiple peaks and shifts toward longer wavelengths after plasma treatment. The responsivity of Au/PSi/n-Si/Ag photodetectors increases with plasma voltage, reaching its highest values at 16 kV (9.28 and 10.83 W/A at 480 and 600 nm) and the maximum detectivity of 2.47 × 10¹² and 2.8 × 10¹² Jones at 480 and 600 nm. Photodetectors performance was evaluated based on repeatability and photo response speed. The stability of Au/PSi/n-Si/Ag, heterojunction photodetectors, was tested at -1 V bias voltage and 4 s switch cycle, demonstrating constant maximum current values.