Silicon最新文献

G-series nerve agents are more lethal and noxious among all classes of nerve agents. In search of better surface for the monitoring and removal of G-series nerve agents (Tabun, Sarin, Soman and Cyclosarin), the sensitivity and selectivity of bowl-shaped silicon carbide (b-SiC) is explored. The sensor ability of Silicon Carbide properties is evaluated at ωB97XD/6–31 + G(d,p) method of density functional theory (DFT). Interaction energy revealed the thermodynamic stability of all complexes and the Soman@b-SiC is found the most stable complex with the highest interaction energy of -34.29 kcal/mole. The natural bond orbital (NBO) charge analysis showed the charge transfer during complexation. A noteworthy change in frontier molecular orbitals energy gap (E_H-L) is observed for all complexes. Noncovalent interaction (NCI) analysis confirmed the presence of noncovalent interactions between the nerve agents and b-SiC. NBO charge transfer is validated through electronic density differences (EDD). The overall results of the study confirmed that bowl-shaped silicon carbide can act as a better sensor for G-series nerve agent and can be effective in using as next generation sensing material.

Silicon nanowires are part of nanostructures, characterized by a high surface to volume ratio or large aspect ratio (AR), between 10 and 10⁴. The new physicochemical properties of SiNWs compared to those of planar silicon are inevitable parameters for involving these nanostructures in the fields of nanotechnology, environment, medicine, pharmacy and others. Nevertheless, the passivation of nanowires by metal nanoparticles or a suitable semiconductor enhances their photocatalytic activities. Likewise, the addition of appropriate organic compounds improves the sensor of these nanostructures. In this paper, we first summarize an overview bottom-up and top-down production of silicon nanowires, and then the advantages and drawbacks of each method are described. Some potential implications of SiNWs in optoelectronics, photocatalysts and biosensors have been detailed. In each application, the main elements of enhancement of the composite-based on silicon nanowires covered with metal nanoparticles or functionalized with an organic compound are discussed.

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Research Highlights

1- MACE technique for SiNWs elaboration

2- Catalytic and photocatalytic efficiency of silicon nanowires

3- The effect of metal nanoparticles covered nanowires of silicon on catalytic and photocatalytic efficiency

4- The effect of sunlight on photocatalytic efficiency

5- The functionalization of nanowires by specific organic compounds to the cure of certain human diseases

6- The physicochemical properties of SiNWs and the origin of their involvement to produce probes immobilizing DNA on the surface

7- The implication of SiNWs in Schottky diodes (SD) and organic Schottky diodes (OSD)

8- The effect of organic molecules in the SiNWs layer

Here, the abilities of Fe-Si₄₂, Fe-Al₂₁N₂₁, Cu-C₆₀, Cu-B₃₀P₃₀, Fe-SiNT(9, 0), Fe-AlNNT(9, 0), Cu-CNT(6, 0) and Cu-BPNT(6, 0) as nano-catalysts of OER and ORR processes are investigated in alkaline environment. The calculated formation energy of Fe- and Cu-doped nanocages and Fe- and Cu-doped nanotubes (Fe-Si₄₂, Fe-Al₂₁N₂₁, Fe and Cu doped nanotubes) are acceptable values and these structures are stable. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) have higher capacity for adsorption of OER/ORR species than other studied catalysts. The *OH removal and *OOH formation on Fe-Si₄₂, Fe-Al₂₁N₂₁, Fe and Cu doped nanotubes are potential-determining steps for OER/ORR processes in alkaline environment. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) catalysts for OER/ORR processes have lower over-potential than other studied catalysts. The Fe-AlNNT(9, 0) and Cu-BPNT(6, 0) as effective catalysts are suggested to catalyze the OER/ORR processes in alkaline environment.

This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as I_ON as high as (approx) 80µA/µm along with an I_ON/I_OFF ratio of 6.784 × 10¹² and a cut-off frequency (f_T) being equal to 64.7 GHz.

A novel Superjunction LIGBT with integrated planar Self-Biased PMOS (abbrev.SBP) and planar Self-Biased NMOS (abbrev.SBN), named DM-SJ-LIGBT is proposed and investigated. The SBN is connected in parallel with the main Gate, thus it is adaptively turned on and turned off with the main Gate. The gate and drain of SBP are shorted together to emitter electrode, and the P-pillar work as the source of SBP. Consequently, the SBP could realize adaptively turned on and turned off ability without additional gate signal control .At the forward conduction state, the planar SBN and trench main Gate are turned on with double electron channel, thus it effectively reduce ({V}_{ON}) compared with the conventional SJ-LIGBT. However, the SBP is turn-off state with ({V}_{GS,P}>{V}_{TH,P}). At the turn off state, The SBP is automatically turned on to extract the holes when the ({V}_{GS,P}<{V}_{TH,P}), which reduces the turn-off loss ({E}_{OFF}) significantly. Consequently, the DM-SJ-LIGBT obtains a superior trade-off relationship between forward conduction voltage ({V}_{ON}) and ({E}_{OFF}) . At the same ({E}_{OFF}) of 0.61 mJ/(cm^2), the ({V}_{ON}) of the DM-SJ-LIGBT with ({T}_{SBN}) =100nm and the DM-SJ-LIGBT with ({T}_{SBN}) =50 nm is 11% and 22% lower than the conventional SJ-LIGBT, respectively. Moreover, When ({V}_{ON}) is 1.36 V, the ({E}_{OFF}) of the DM-SJ-LIGBT with ({T}_{SBN})=100nm and the DM-SJ-LIGBT with ({T}_{SBN})=50 nm are 0.354 and 0.147 mJ/(cm^2) respectively, which is 42% and 76% less than that of the conventional SJ-LIGBT.

Rubber blending is a prominent technique for enhancing properties in final rubber products. This study investigates the interplay of filler concentration and surface modification in EPDM/SBR blend composites with halloysite nanotubes (HNTs). The effects of γ-Aminopropyltriethoxysilane (APTES) and resorcinol-hexamethylenetetramine (RH) modifiers were examined. Comparing rubber blend composites with modified and unmodified HNTs, the findings reveal significant enhancements using RH-modified HNTs. These composites outperform those with APTES-modified and unmodified HNTs, notably improving mechanical properties. The addition of fillers increases crosslink density and filler-rubber interaction, reducing mole percent uptake. These trends result in significantly improved abrasion resistance in the composites. FESEM images show that RH-modified HNTs have superior distribution compared to APTES-modified and unmodified HNTs, highlighting their effective interaction and dispersion. These findings can guide the optimization and production of outdoor applications.

The tracking-resistant silicone rubber with superior water resistance is very essential for outdoor high-voltage transmission field. In this work, aminepropyltriethoxysilane-immobilized silica (APTES-SiO₂) was prepared through dehydration condensation between the ethoxy groups of aminepropyltriethoxysilane (APTES) and hydroxyl groups on the SiO₂ surface. The effects of APTES-SiO₂ on the vulcanization, mechanical properties, thermal stability and tracking resistance of addition-cure liquid silicone rubber (ALSR) were studied. The results revealed that APTES-SiO₂ and platinum catalyst (Pt) synergistically improved the tracking resistance of ALSR, and APTES-SiO₂/ALSR also possessed excellent water resistance. When the content of APTES and Pt was 0.15 phr (parts per hundreds of rubber) and 15 ppm (parts per million), respectively, APTES-SiO₂/ALSR reached 1A4.5 level. Furthermore, the tracking resistance of ALSR showed little deterioration even after immersion in water for 30 days. The results of thermogravimetry (TG) and thermogravimetry-Fourier transform infrared spectroscopy (TG-FTIR) indicated that APTES-SiO₂ and Pt synergistically promoted the radical crosslinking of ALSR chains at high temperature, which was favorable to the formation of compact ceramic protected layer, thus significantly improved the tracking resistance of ALSR.

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Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the channel and contact resistance between the electrode and channel were determined using transmission line method (TLM). Precisely deposited thin films via RF sputtering at room temperature, our TFTs, equipped with a bottom gate top contact and processed at 500 (^{circ })C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm(^2)V(^{-1})s(^{-1}), a current on/off ratio of approximately 10(^9), and a subthreshold swing (SS) value below 0.45 V decade(^{-1}). Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology.

It is still unknown how dissolved manganese ions affect the silicon anode's electrochemical performance in the lithium-ion batteries (LIBs). In this study, the damage mechanism of Mn²⁺ to silicon electrode in LIBs was studied by adding Mn²⁺ into electrolyte system to simulate the electrochemical environment. Through the comparison between full cell and half cell, the mechanism of the capacity fading of silicon electrode is revealed. In order to compare the amount of SEI growth of silicon anode during cycling, the heat flux of SEI was analyzed by DSC. Experiments shows that Mn²⁺ could make SEI more fragile, more easily break, and then accelerate the SEI thickening. So Mn²⁺ could reduce the Coulomb efficiency and electrochemical capacity of the silicon-based electrode. The galvanostatic cycle current is 300 mA/g. The half cell's Coulomb efficiency exceeds 97%, whereas the whole cell's Coulomb efficiency is only 32% after 100 cycles. In addition to the damage of the Mn²⁺ to silicon anode, the depletion of active lithium ion source in full cell is also an important reason for the rapid decline of electrochemical capacity.