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Characteristics, implementation, and applications of special perfect entanglers 特殊完美纠缠器的特点、实现和应用
IF 1.5 4区 物理与天体物理 Q3 OPTICS Pub Date : 2024-11-18 DOI: 10.1140/epjd/s10053-024-00925-4
Karthick Selvan, S. Balakrishnan

In this paper, we discuss the characteristics of special perfect entanglers from a new perspective, present the results obtained from the implementation of special perfect entangler circuits using cross-resonance interaction, and discuss their applications. First, we show that the entangling power of a two-qubit gate is proportional to the mean squared length of the chords present in the argand diagram of squared eigenvalues of the nonlocal part of the gate, and derive the entangling characteristics of special perfect entanglers from the argand diagram associated with them. Next, we discuss the implementation of a single-parameter special perfect entangler circuit in an IBM quantum processor. We implement the circuit for nine different parameters using two methods. In the first method, we use two echoed cross-resonance gates for implementation, and in the second method, we use pulse-level programming to define the pulse sequence of part of the circuits. For a particular input state, we perform quantum state tomography, calculate state fidelity and concurrence of the output density matrices, and compare the results obtained in both methods of implementation. We also measure the average gate fidelity for the B gate circuit. We construct a universal two-qubit quantum circuit using the special perfect entangler circuit. This universal circuit can be used to generate all two-qubit gates in IBM quantum processors. We also show that ((n-1)) B gate circuits can be used to generate n-qubit GHZ and perfect W states. We generate three-qubit perfect W state in IBM quantum processor. Perfect W state generated using pulse-level programming shows better fidelity than the state generated using four echoed cross-resonance gates.

本文从一个新的角度讨论了特殊完美纠缠器的特性,介绍了利用交叉共振相互作用实现特殊完美纠缠器电路所获得的结果,并讨论了它们的应用。首先,我们证明了双量子比特门的纠缠力与非局部门的平方特征值的阿甘德图中存在的弦的平均平方长度成正比,并从与之相关的阿甘德图中推导出了特殊完美纠缠器的纠缠特性。接下来,我们讨论在 IBM 量子处理器中实现单参数特殊完美纠缠器电路。我们用两种方法实现了九种不同参数的电路。在第一种方法中,我们使用两个回波交叉共振门来实现;在第二种方法中,我们使用脉冲级编程来定义部分电路的脉冲序列。对于特定的输入状态,我们进行量子态层析成像,计算状态保真度和输出密度矩阵的一致性,并比较两种实现方法得到的结果。我们还测量了 B 门电路的平均门保真度。我们利用特殊的完美纠缠电路构建了一个通用的双量子比特量子电路。这个通用电路可用于生成 IBM 量子处理器中的所有双量子比特门。我们还证明了((n-1))B门电路可以用来产生n量子比特GHZ和完美W态。我们在 IBM 量子处理器中生成了三量子比特完美 W 态。使用脉冲级编程生成的完美 W 状态比使用四个回波交叉共振门生成的状态显示出更好的保真度。
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引用次数: 0
Enhanced thermoelectric properties of zinc porphyrin dimers-based molecular devices 基于卟啉锌二聚体的分子器件的增强热电性能
IF 1.5 4区 物理与天体物理 Q3 OPTICS Pub Date : 2024-11-15 DOI: 10.1140/epjd/s10053-024-00932-5
Dhia Saiwan Preesam, Hossain Milani Moghaddam, Mohammed Deia Noori

In this study, we investigated the electrical and thermoelectric properties of the zinc porphyrin dimer and the double-dimer zinc porphyrin molecular junctions using density functional theory (DFT) combined with the non-equilibrium Green’s function method. Our results demonstrate that the electronic transport and thermoelectric properties of these junctions can be significantly improved in the presence of another dimer. By adding a new zinc porphyrin dimer, the electrical conductance (G) increased up to an order of magnitude and showed further enhancement in the Seebeck coefficient for a good range of Fermi energies. However, the situation is the opposite in the case of the structure of zinc porphyrin dimer without any additives. These results imply that through modifications in the molecular configuration, there exists a promising potential for enhancing the figure of merit (ZT) value, thereby these systems can be potentially utilized to increase the opportunities for versus application in molecular-scale thermoelectric energy generators we conducted a comparative analysis between the zinc porphyrin dimer and the double-dimer zinc porphyrin molecular junctions.

Graphic abstract

Zinc porphyrin dimers-based molecular wire

在这项研究中,我们使用密度泛函理论(DFT)结合非平衡格林函数法研究了卟啉锌二聚体和双二聚体卟啉锌分子结的电学和热电性能。我们的研究结果表明,在存在另一种二聚物的情况下,这些结的电子传输和热电特性可以得到显著改善。通过添加新的卟啉锌二聚体,电导(G)增加了一个数量级,并在费米能的良好范围内进一步提高了塞贝克系数。然而,在没有添加任何添加剂的卟啉锌二聚体结构中,情况却恰恰相反。这些结果表明,通过改变分子构型,存在着提高优点系数(ZT)值的潜力,因此这些系统有可能被用来增加在分子尺度热电能源发生器中的应用机会。 图文并茂的摘要基于锌卟啉二聚体的分子线
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引用次数: 0
Investigation of structural, IR spectral, thermodynamics and excitation property alterations in (AlN)12 cluster under external electric fields 外电场作用下 (AlN)12 簇的结构、红外光谱、热力学和激发特性变化研究
IF 1.5 4区 物理与天体物理 Q3 OPTICS Pub Date : 2024-11-15 DOI: 10.1140/epjd/s10053-024-00911-w
Jie Yang, Nuerbiye Aizez, Jiajun Ma, Gulimire Yaermaimaiti, Abduhalik Kadir, Xiaoning Wang, Huan An, Bumaliya Abulimiti, Mei Xiang

In recent years, there has been a growing global interest in ultra-wide bandgap semiconductor materials, with aluminium nitride emerging as a particularly promising material. Using density-functional theory (DFT) at the CAM-B3LYP/6-311G(3d,2p) basis set level, we have systematically optimized the geometries of the (AlN)12 cluster. Furthermore, the structural and thermodynamic changes of these clusters under the external electric field (EEF) were investigated. When the external electric field intensity increased the energy gap decreases continuously, infrared spectral analysis showed an obvious Stark effect, and the molecular structure showed significant alterations. Additionally, the study examined orbital compositions and excitation properties of twenty excited states using time-dependent density-functional theory (TD-DFT). The results indicated a decrease in excitation energy with increasing EEF, resulting in longer wavelengths and red-shifted spectral. These findings provide an opportunity to precisely modulate the electronic properties of (AlN)12 cluster by controlling the strength and direction of the EEF, opening up more possibilities for their application in photoelectronic devices.

Graphical abstract

近年来,全球对超宽带隙半导体材料的兴趣与日俱增,其中氮化铝是一种特别有前途的材料。利用 CAM-B3LYP/6-311G(3d,2p) 基集水平的密度泛函理论(DFT),我们系统地优化了 (AlN)12 簇的几何结构。此外,我们还研究了这些团簇在外加电场(EEF)作用下的结构和热力学变化。当外电场强度增加时,能隙不断减小,红外光谱分析显示出明显的斯塔克效应,分子结构也发生了显著变化。此外,研究还利用时间相关密度泛函理论(TD-DFT)检验了二十种激发态的轨道组成和激发特性。结果表明,随着 EEF 的增加,激发能量会降低,从而导致波长变长和光谱红移。这些发现为通过控制 EEF 的强度和方向来精确调节 (AlN)12 簇的电子特性提供了机会,为其在光电子器件中的应用提供了更多可能性。
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引用次数: 0
Topological effects of cosmic string on radial eigenvalue solution with Mie-type potential 宇宙弦对具有mie型势的径向本征值解的拓扑效应
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-09-02 DOI: 10.1140/epjd/s10053-023-00749-8
Faizuddin Ahmed

In this contribution, we study the non-relativistic Schrödinger equation with the interaction potential of Mie-type in the background of the topological defects produced by a cosmic string. We determine the radial eigenvalue solution and analyze the effects of the topological defect. It is shown there that the energy levels and wave function of the non-relativistic quantum particles get modified by the topological defect of the geometry compared to the flat space result with this potential. Afterwards, this eigenvalue solution is utilized in some well-known molecular potential models (Kratzer, modified Kratzer, Coulomb potentials), and presents the eigenvalue solutions.

The time-independent Schrodinger wave equation with potential ((V(r)=frac{delta }{r}+frac{gamma }{r}^{2} +V_{0})) in curved space is described by the wave equation (left[ -frac{1}{2,M}frac{1}{sqrt{g}}partial _{i}(sqrt{g}g^{ij}partial _{j})+left( frac{delta }{r}+frac{gamma }{r}^{2} +V_{0}right) right] Psi =E Psi ).

本文在宇宙弦产生拓扑缺陷的背景下,研究了具有mie型相互作用势的非相对论性Schrödinger方程。我们确定了径向特征值解,并分析了拓扑缺陷的影响。结果表明,非相对论性量子粒子的能级和波函数受到几何拓扑缺陷的修正,与具有该势的平坦空间结果相比。随后,将该特征值解应用于一些著名的分子势模型(Kratzer、修正Kratzer、Coulomb势),并给出了特征值解。弯曲空间中具有((V(r)=frac{delta }{r}+frac{gamma }{r}^{2} +V_{0}))势的时变薛定谔波动方程用波动方程(left[ -frac{1}{2,M}frac{1}{sqrt{g}}partial _{i}(sqrt{g}g^{ij}partial _{j})+left( frac{delta }{r}+frac{gamma }{r}^{2} +V_{0}right) right] Psi =E Psi )来描述。
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引用次数: 0
Publisher Correction: The spectroscopic and transition properties of quadruply ionized bismuth: Bi V 出版者更正:四层电离铋:Bi V的光谱和跃迁性质
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-09-01 DOI: 10.1140/epjd/s10053-023-00747-w
Neelam Kumari Arya, A. Tauheed
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引用次数: 0
Dissociative electron attachment and dissociative ionization of CF3AuCNC(CH3)3, a potential FEBID precursor for gold deposition CF3AuCNC(CH3)3的解离电子附着和解离电离——一种潜在的FEBID金沉积前驱体
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-08-16 DOI: 10.1140/epjd/s10053-023-00721-6
Ali Kamali, Will G. Carden, Jodie V. Johnson, Lisa McElwee-White, O. Ingólfsson

Appreciable effort is currently committed to designing suitable organometallic precursors for fabrication of metallic nanostructures with focused electron beam induced deposition (FEBID)—a direct write method with high potential for 3D patterning. In this context, the initial interaction of the potential precursor with low energy electrons is critical and the extent of electron-induced ligand loss determines the composition of the resulting deposits. Specifically of interest are gold-containing precursors, as the optoelectronic properties of gold provide potential for a variety of plasmonic and light enhancing applications of 3D nanostructures. Here, we study low energy electron-induced fragmentation of CF3AuCNC(CH3)3 through dissociative ionization (DI) and dissociative electron attachment (DEA) in the gas phase under single collision conditions and under conditions where collisional stabilization is provided. We further compare the fragmentation patterns observed under these conditions with the composition of deposits formed from this precursor under FEBID conditions. In DI, a significant difference in relative intensities is found under single collision conditions as compared to conditions where collisional stabilization is provided, while under both these conditions, only the same DEA channel is open. Comparison with the composition of deposits formed under FEBID conditions shows that the initial electron-induced fragmentation processes are not directly reflected in the deposit’s composition. Rather, we expect these to determine the initial composition of immobilized fragments, while the final composition of the deposit is determined by electron-induced secondary and tertiary reactions caused by further irradiation after immobilization.

Graphical abstract

目前,人们致力于设计合适的有机金属前驱体,用于用聚焦电子束诱导沉积(FEBID)制造金属纳米结构,这是一种具有高潜力的3D图像化直接写入方法。在这种情况下,潜在前驱体与低能电子的初始相互作用是至关重要的,电子诱导的配体损失的程度决定了所得沉积物的组成。特别感兴趣的是含金前体,因为金的光电特性为3D纳米结构的各种等离子体和光增强应用提供了潜力。本文研究了CF3AuCNC(CH3)3在单一碰撞条件和提供碰撞稳定化条件下,通过解离电离(DI)和解离电子附着(DEA)在气相中的低能电子诱导破碎。我们进一步将这些条件下观察到的破碎模式与FEBID条件下由该前驱体形成的沉积物组成进行了比较。在DI中,单一碰撞条件下的相对强度与提供碰撞稳定条件下的相对强度存在显著差异,而在这两种情况下,只有相同的DEA通道是开放的。与FEBID条件下形成的矿床组成对比表明,初始电子诱导破碎过程并未直接反映在矿床组成中。相反,我们希望这些能确定固定碎片的初始组成,而沉积物的最终组成是由固定后进一步照射引起的电子诱导的二级和三级反应决定的。图形抽象
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引用次数: 0
Improve the performance of reference-frame-independent measurement-device-independent quantum key distribution with heralded single-photon sources 利用预传单光子源提高了与参考帧无关的测量设备无关的量子密钥分配的性能
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-08-12 DOI: 10.1140/epjd/s10053-023-00737-y
Ling Zhou, Zhenhua Li, Jipeng Wang, Zhongqi Sun, Yue Li, Haiqiang Ma

The performance degradation of reference-frame-independent measurement-device-independent quantum key distribution (RFI-MDI-QKD) protocol caused by the finite key size effect impedes its practical implementation. The protocol utilizes the double-scanning method, which makes it possible to precisely estimate both the counts of single-photon pairs and the phase-flip error. This method effectively counteracts the statistical fluctuation brought on by the finite key size effect. Based on this method, we propose a scheme in this work that substitutes heralded single-photon sources (HSPS) for weak coherent sources (WCS), and we compare the performance of the two schemes by calculating the key rate. The RFI-MDI-QKD using HSPS, according to the results of the simulation, has a lower key rate than the RFI-MDI-QKD using WCS, but it also has a longer transmission distance and a more noticeable improvement in transmission distance at larger rotation angles. Thus, we demonstrate that the RFI-MDI-QKD protocol, based on the double-scanning method and using HSPS, has promising future application potential.

参考帧无关测量设备无关量子密钥分配(RFI-MDI-QKD)协议由于有限密钥大小效应导致性能下降,阻碍了其实际实现。该协议采用双扫描方法,可以精确估计单光子对的计数和相位翻转误差。该方法有效地抵消了有限键大小效应带来的统计波动。在此基础上,我们提出了一种用预告单光子源(HSPS)代替弱相干源(WCS)的方案,并通过计算密钥速率比较了两种方案的性能。仿真结果表明,使用HSPS的RFI-MDI-QKD的密钥速率比使用WCS的RFI-MDI-QKD的密钥速率低,但传输距离更长,在更大的旋转角度下传输距离的改善更为明显。因此,我们证明了基于双重扫描方法和使用HSPS的RFI-MDI-QKD协议具有广阔的应用前景。
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引用次数: 0
Theoretical study on dielectronic recombination process and X-ray line polarization of B-like Ar13+ ion 类b Ar13+离子介电复合过程及x射线线极化的理论研究
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-08-09 DOI: 10.1140/epjd/s10053-023-00732-3
Sheng-Bo Niu, Yu-Long Ma, Wen-Liang He, Lu-You Xie, Chen-Zhong Dong

Theoretical investigations of K-shell Δn?=?1 (1s?→?2l) dielectronic recombination (DR) of B-like Ar13+ ions are performed. The resonance energies, autoionization and radiative rates, as well as DR strengths, are obtained with inclusion of Breit and QED corrections using the Flexible Atomic Code. Furthermore, the differential cross sections, linear polarization, and polarization-dependent spectra for KLL DR process are presented for X-ray dielectronic satellite lines. The present results indicate the importance of high-order trielectronic and quadruelectronic recombination.

Graphical abstract

k壳层的理论研究Δn?=?对类b Ar13+离子进行了1 (1s→2l)介电复合(DR)。利用柔性原子码,在包含Breit和QED校正的情况下,获得了共振能量、自离率和辐射率以及DR强度。此外,给出了x射线介质电子卫星线KLL - DR过程的微分截面、线偏振和偏振相关光谱。目前的结果表明了高阶三电子和四电子复合的重要性。图形抽象
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引用次数: 0
Electron-driven processes from single collisions to high-pressure plasmas 从单次碰撞到高压等离子体的电子驱动过程
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-08-09 DOI: 10.1140/epjd/s10053-023-00739-w
Jose L. Lopez, Michael Brunger, Holger Kersten
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引用次数: 0
Carbon nanotubes with point defects produced by ionizing radiation: a study using DFTB 电离辐射产生点缺陷的碳纳米管:DFTB的研究
IF 1.8 4区 物理与天体物理 Q3 OPTICS Pub Date : 2023-08-07 DOI: 10.1140/epjd/s10053-023-00735-0
Inés María Macías Labrada, Luis Ignacio Estévez Baños, Daniel Codorniu Pujals, Maykel Márquez Mijares

The effect of the ionizing radiation on the structure and properties of carbon nanotubes (CNTs) is of great theoretical and practical interest, due to their potential applications in the electronics and other fields, including nuclear energy. Although several investigations have been devoted to this issue in the last years, many aspects of that interaction are still not well understood. With the objective of achieving a better understanding of these processes, in the present work the density functional based tight binding method is used to study CNTs of single and multiple layers, in which the kind of defects that typically appear under the action of the radiation (vacancies, divacancies, Stone-Wales defects and other) were introduced. The results related with the energy of formation of those defects and the geometric and energy modifications that take place in the CNTs with different chirality and number of layers are presented.

电离辐射对碳纳米管(CNTs)结构和性能的影响,由于其在电子学和包括核能在内的其他领域的潜在应用,引起了极大的理论和实践兴趣。尽管在过去几年中对这个问题进行了一些调查,但这种相互作用的许多方面仍然没有得到很好的理解。为了更好地理解这些过程,本文采用基于密度泛函的紧密结合方法对单层和多层CNTs进行了研究,并介绍了在辐射作用下通常出现的缺陷类型(空位、空缺、Stone-Wales缺陷等)。给出了这些缺陷的形成能量以及不同手性和层数的碳纳米管中发生的几何和能量变化的相关结果。
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引用次数: 0
期刊
The European Physical Journal D
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