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α-Ta films on c-plane sapphire with enhanced microstructure 具有增强微观结构的 c 平面蓝宝石上的α-Ta 薄膜
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-06 DOI: 10.1063/5.0218021
Lena N. Majer, Sander Smink, Wolfgang Braun, Bernhard Fenk, Varun Harbola, Benjamin Stuhlhofer, Hongguang Wang, Peter A. van Aken, Jochen Mannhart, Felix V. E. Hensling
Superconducting films of α-Ta are promising candidates for the fabrication of advanced superconducting qubits. However, α-Ta films suffer from many growth-induced structural inadequacies that negatively affect their performance. We have therefore explored a new synthesis method for α-Ta films, which allows for the growth of these films with an unprecedented quality. Using this method, high quality α-Ta films are deposited at a comparably high substrate temperature of 1150 °C. They are single-phase α-Ta and have a single out-of-plane (110) orientation. They consist of grains ≥2 μm that have one of three possible in-plane orientations. As shown by scanning transmission electron microscopy and electron energy loss studies, the substrate–film interfaces are sharp with no observable intermixing. The obtained insights into the epitaxial growth of body-centered-cubic films on quasi-hexagonal substrates lay the basis for harnessing the high structural coherence of such films in various applications.
α-Ta超导薄膜是制造先进超导量子比特的理想候选材料。然而,α-Ta 薄膜存在许多生长引起的结构缺陷,对其性能产生了负面影响。因此,我们探索了一种新的α-Ta 薄膜合成方法,这种方法可以生长出质量前所未有的α-Ta 薄膜。使用这种方法,可以在 1150 °C 的较高基底温度下沉积出高质量的 α-Ta 薄膜。这些薄膜是单相α-Ta,具有单一的面外(110)取向。它们由≥2 μm的晶粒组成,这些晶粒具有三种可能的面内取向之一。扫描透射电子显微镜和电子能量损失研究表明,基底-薄膜界面清晰,没有可观察到的混杂现象。对准六边形基底上体心立方体薄膜外延生长的深入了解,为在各种应用中利用此类薄膜的高结构一致性奠定了基础。
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引用次数: 0
Growth of bilayer transition metal dichalcogenides at controlled locations 在受控位置生长双层过渡金属二钙化物
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-05 DOI: 10.1063/5.0221397
Chengyu Wen, Carl H. Naylor, Kevin P. O’Brien, Adedapo Oni, Mahmut S. Kavrik, Yeonjoon Suh, A. T. Charlie Johnson
Layered transition metal dichalcogenide (TMD) materials have attracted great interest for applications in electronics. Here, we report a method to synthesize TMD materials at controlled locations with the desired layer number. Metal oxide precursors are patterned on the growth substrate by photolithography, and then a mixture of sodium chloride and sodium cholate growth promoters is applied to enable the growth of monolayer and bilayer TMDs with large flake sizes. The quality of the bilayer flakes is examined by atomic force microscopy, Auger electron spectroscopy, Raman spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy. Electrical performance is evaluated by fabricating three-terminal field-effect transistors that demonstrate high carrier mobilities and on/off ratios larger than 105. This approach provides insights into future device applications and integration strategies based on layered TMD materials.
层状过渡金属二掺杂物(TMD)材料在电子学中的应用引起了极大的兴趣。在此,我们报告了一种在可控位置合成具有所需层数的 TMD 材料的方法。通过光刻技术将金属氧化物前驱体图案化在生长基底上,然后使用氯化钠和胆酸钠的混合生长促进剂,使大片状尺寸的单层和双层 TMD 得以生长。原子力显微镜、欧杰电子能谱、拉曼光谱、光致发光能谱和透射电子显微镜对双层薄片的质量进行了检测。通过制造三端场效应晶体管评估了其电气性能,这些晶体管显示出较高的载流子迁移率和大于 105 的导通/截止比。这种方法为未来基于层状 TMD 材料的器件应用和集成战略提供了启示。
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引用次数: 0
Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface Ga2O3/Al2O3 界面伪α相中间层的成分和应变
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-05 DOI: 10.1063/5.0226857
M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff
We investigate the composition of α-phase intermediate layers at epitaxial Ga2O3/Al2O3 interfaces using high angle annular dark field scanning transmission electron microscopy. Their presence is considered a general phenomenon as they are observed independent of the growth technique [Schewski et al., Appl. Phys. Exp. 8, 011101]. Samples were grown by plasma assisted molecular beam epitaxy using different growth conditions. Almost independent of these, the quantitative evaluation of the measured intensities gave Ga concentrations of ∼25%. We show that the previously published model, based on a pure α-Ga2O3 interlayer, fails if it is adapted to the measured composition. Density functional theory (DFT) computations were used to overcome the approximations made in this model and suggest that a stabilization of the layer is possible due to the low Ga concentration (≤35%) at which the α-phase is the most stable. Our surface model computations suggest an exchange of Ga atoms at the surface with Al atoms from the underlying substrate as a possible formation mechanism.
我们利用高角度环形暗场扫描透射电子显微镜研究了外延 Ga2O3/Al2O3 界面上 α 相中间层的组成。它们的存在被认为是一种普遍现象,因为观察到它们与生长技术无关[Schewski 等人,《应用物理实验》8,011101]。样品是通过等离子体辅助分子束外延技术在不同的生长条件下生长出来的。几乎与这些条件无关,对测量强度的定量评估得出的镓浓度为 25%。我们的研究表明,如果将以前发表的基于纯 α-Ga2O3 夹层的模型与测量到的成分相适应,该模型就会失效。密度泛函理论(DFT)计算克服了这一模型中的近似值,并表明由于镓的浓度较低(≤35%),α-相最稳定,因此层的稳定是可能的。我们的表面模型计算表明,表面的镓原子与底层基底的铝原子交换是一种可能的形成机制。
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引用次数: 0
Intra-family transformation of the Bi–Te family via in situ chemical interactions 通过原位化学作用实现双碲族的族内转化
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-05 DOI: 10.1063/5.0223779
Zhihao He, Tin Seng Manfred Ho, Chen Ma, Jiannong Wang, Rolf Lortz, Iam Keong Sou
The Bi–Te binary system, characterized by the homologous series of (Bi2)m(Bi2Te3)n, has always attracted research interest for its layered structures and potential in advanced material applications. Despite the fact that Bi2Te3 has been extensively studied, the exploration of other compounds has been constrained by synthesis challenges. This study reports the molecular beam epitaxy growth of FeTe on Bi2Te3, demonstrating that varying growth conditions can turn the Bi2Te3 layer into different Bi–Te phases and form corresponding FeTe/Bi–Te heterostructures. Our combined analysis using reflection high-energy electron diffraction, high-resolution x-ray diffraction, and high-resolution scanning transmission electron microscopy indicates that specific growth conditions used for the growth of the FeTe layer can facilitate the extraction of Te from Bi2Te3, leading to the formation of Bi4Te3 and Bi6Te3. In addition, by lowering the FeTe growth temperature to 230 °C, Te extraction from the Bi2Te3 layer could be avoided, preserving the Bi2Te3 structure. Notably, all three FeTe/Bi–Te structures exhibit superconductivity, with the FeTe/Bi2Te3 heterostructure enjoying the highest superconductivity quality. The results of magneto-transport measurements indicate that the induced superconductivity displays a three-dimensional nature. These findings introduce a novel method for realizing Bi4Te3 and Bi6Te3 through Te extraction by growing FeTe on Bi2Te3, driven by the high reactivity between Fe and Te. This approach holds promise for synthesizing other members of the Bi–Te series, expanding the functional potential of these materials.
以 (Bi2)m(Bi2Te3)n 同源系列为特征的 BiTe 二元体系,因其层状结构和在先进材料应用中的潜力,一直吸引着研究人员的兴趣。尽管对 Bi2Te3 进行了广泛的研究,但对其他化合物的探索一直受到合成难题的制约。本研究报告了在 Bi2Te3 上分子束外延生长 FeTe 的过程,证明了不同的生长条件可将 Bi2Te3 层转化为不同的 Bi-Te 相,并形成相应的 FeTe/Bi-Te 异质结构。我们利用反射高能电子衍射、高分辨率 X 射线衍射和高分辨率扫描透射电子显微镜进行的综合分析表明,用于生长 FeTe 层的特定生长条件可促进从 Bi2Te3 中提取 Te,从而形成 Bi4Te3 和 Bi6Te3。此外,将 FeTe 生长温度降低到 230 °C,可以避免从 Bi2Te3 层中萃取 Te,从而保留 Bi2Te3 结构。值得注意的是,所有三种 FeTe/Bi-Te 结构都表现出超导性,其中 FeTe/Bi2Te3 异质结构的超导质量最高。磁传输测量结果表明,诱导超导具有三维性质。这些发现介绍了一种新方法,即通过在 Bi2Te3 上生长 FeTe 来提取 Te,从而实现 Bi4Te3 和 Bi6Te3。这种方法有望合成 Bi-Te 系列的其他成员,从而拓展这些材料的功能潜力。
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引用次数: 0
Material discovery and modeling acceleration via machine learning 通过机器学习加速材料发现和建模
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-04 DOI: 10.1063/5.0230677
Carmine Zuccarini, Karthikeyan Ramachandran, Doni Daniel Jayaseelan
This paper delves into the transformative role of Machine Learning (ML) and Artificial Intelligence (AI) in materials science, spotlighting their capability to expedite the discovery and development of newer, more efficient, and stronger compounds. It underscores the shift from traditional, resource-intensive approaches toward data-driven methodologies that leverage large datasets to predict properties, identify new materials, and optimize synthesis conditions with a satisfactory level of accuracy. Highlighting various techniques, including supervised, unsupervised, and reinforcement learning, alongside deep learning potential, the chapter presents case studies and applications ranging from predicting stress points in stochastic fields to optimizing thermal protection systems for spacecraft re-entry. It also explores the challenges and future directions, emphasizing the need for integrating experimental validations and developing tailored algorithms to overcome data and computational constraints. The narrative showcases ML and AI’s promise in revolutionizing material discovery, paving the way for innovative solutions in science and engineering.
本文深入探讨了机器学习(ML)和人工智能(AI)在材料科学中的变革性作用,重点介绍了它们在加快发现和开发更新、更高效、更强大的化合物方面的能力。它强调了从传统的资源密集型方法向数据驱动型方法的转变,这种方法利用大型数据集来预测特性、识别新材料,并以令人满意的准确度优化合成条件。本章重点介绍了各种技术,包括监督学习、无监督学习和强化学习,以及深度学习的潜力,并介绍了从预测随机场中的应力点到优化航天器重返大气层的热保护系统等案例研究和应用。本章还探讨了面临的挑战和未来的发展方向,强调了整合实验验证和开发定制算法以克服数据和计算限制的必要性。报告展示了 ML 和 AI 在彻底改变材料发现方面的前景,为科学和工程领域的创新解决方案铺平了道路。
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引用次数: 0
Nanozyme microspheres with structural color-coding labels for synergistic therapy of psoriasis 用于银屑病协同治疗的带结构色标的纳米酶微球
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-03 DOI: 10.1063/5.0229803
Nengjie Yang, Yuting Huang, Chen Dong, Chi Sun, Peipei Xi, Yuexiao Dai, Rui Zhao, Yunan Wang, Yujuan Zhu, Zhifeng Gu
Psoriasis is an immune system-mediated skin disease identified by the appearance of erythematous as a central symptom. As a recurrent and chronic inflammatory disease, psoriasis is influenced by both genetic and environmental factors and is known to be with no effective cure. Considering a multifaceted etiology of psoriasis, synergistic therapy exhibits great benefits over monotherapy, which becomes common for the treatment of various diseases. Herein, we present the nanozyme microspheres with structural color-coding labels for synergistic therapy of psoriasis. In particular, microsphere hydrogel is fabricated by the edible hydroxypropyl cellulose (HPC), which can generate a photonic liquid crystalline mesophase under lyotropic conditions in solution. Through adjustment of hydrogel components, microspheres endow with different functions, including moisturizing (paraffin), cfDNA scavenging (chitosan), and anti-inflammation (cerium oxide nanozyme). To improve patient convenience, hydrogel drops with different properties are tailored with different vivid structural colors by exploiting the lyotropic behavior of HPC. Of particular note, both in vitro and in vivo experiments have demonstrated the significant therapeutic effects of the encoded structural color microspheres. Green moisturizing microspheres facilitate to relieve dry, flaky skin patches; blue cfDNA scavenging and red anti-inflammatory microspheres significantly reduce skin inflammation. More importantly, combination therapy with encoded microspheres exerted the synergistic effects, including the increased body weight, thicker epidermal layer, and reduced immune activation. Overall, this synergistic treatment offers a promising platform for personalized management of psoriasis and various inflammatory skin diseases.
银屑病是一种由免疫系统介导的皮肤病,以出现红斑为主要症状。银屑病是一种反复发作的慢性炎症性疾病,受遗传和环境因素的影响,目前尚无有效的治疗方法。考虑到银屑病的多方面病因,协同疗法比单一疗法具有更大的优势,这已成为治疗各种疾病的常用方法。在此,我们介绍了用于银屑病协同治疗的带有结构色标的纳米酶微球。其中,微球水凝胶是由可食用的羟丙基纤维素(HPC)制成的,它能在溶液的变性条件下生成光子液晶介相。通过调整水凝胶成分,微球可具有不同的功能,包括保湿(石蜡)、cfDNA 清除(壳聚糖)和抗炎(氧化铈纳米酶)。为了方便患者使用,我们利用 HPC 的溶解特性,定制了具有不同特性的水凝胶滴剂,并赋予其不同的鲜艳结构色彩。特别值得一提的是,体外和体内实验都证明了编码结构色微球的显著治疗效果。绿色保湿微球有助于缓解皮肤干燥、脱皮;蓝色 cfDNA 清除微球和红色消炎微球可显著减轻皮肤炎症。更重要的是,编码微球的组合疗法发挥了协同效应,包括增加体重、增厚表皮层和减少免疫激活。总之,这种协同治疗为个性化治疗银屑病和各种炎症性皮肤病提供了一个前景广阔的平台。
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引用次数: 0
Visible/near-infrared luminescence and concentration effects of Pr3+-doped Sr2Al2GeO7 downconversion phosphors 掺杂 Pr3+ 的 Sr2Al2GeO7 下转换荧光粉的可见光/近红外发光和浓度效应
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-03 DOI: 10.1063/5.0226329
Tiantian Shen, Shanshan Zhao, An Su, Haisheng Liu, Fayi Chen, Benchun Li, Xinxin Han, Dechao Yu, Dawei Zhang
The Pr3+ ion has been widely doped into various materials as a red and near-infrared (NIR) emitting center for applications in lighting and solar spectrum downconversion. Herein, the preparation of a new library of Pr3+-doped Sr2Al2GeO7 phosphors was proved by powder x-ray diffraction patterns and Rietveld refinements and characterized by a scanning electron microscope with energy-dispersive x-ray spectrometry. The Sr2Al2GeO7:Pr3+ sample strongly absorbs blue photons over 420–500 nm and yields intense visible emissions with dominant peaks around 490 nm from the Pr3+ 3P0 → 3H4 transition, as well as robust NIR emission bands over 800–1200 nm. In addition to the typical transitions of 1D2 → 3F2 at 880 nm, 1G4 → 3H4 at 1000 nm, and 1D2 → 3F3,4 at 1070 nm, the distinguishable NIR emission at 929 nm was demonstrated from the 3P0 → 1G4 transition via static and dynamic spectroscopic analysis. Most interestingly, for the 3P0 blue-excited state, a considerably elevated concentration of about 10%Pr3+ was optimal for the visible/NIR emissions, in stark contrast to the diluted optimal 1%Pr3+ for the 1D2 state. The relevant cross-relaxation from the 3P0 and 1D2 states between Pr3+ was comprehensively treated by theoretical speculations and experimental results. Such concentrated Pr3+ blue activators would significantly facilitate the blue-to-NIR downconversion through a desired two-step sequential transition from the 3P0 initial state to the 1G4 intermediate level for quantum efficiency exceeding unity. The current results would consolidate the basis of concentrated Pr3+ donors to promote the novel Pr3+/Yb3+ codoping downconversion for greatly increasing Si solar cell efficiency.
Pr3+ 离子作为红色和近红外(NIR)发光中心已被广泛掺杂到各种材料中,应用于照明和太阳光谱降频。本文通过粉末 X 射线衍射图样和里特维尔德精炼证明了一种新的掺杂 Pr3+ 的 Sr2Al2GeO7 荧光粉库的制备,并用扫描电子显微镜和能量色散 X 射线光谱仪对其进行了表征。Sr2Al2GeO7:Pr3+ 样品强烈吸收 420-500 纳米波长的蓝色光子,并产生强烈的可见光发射,其中 490 纳米波长附近的主峰来自 Pr3+ 3P0 → 3H4跃迁,同时还产生 800-1200 纳米波长的强近红外发射带。除了 880 纳米处的 1D2 → 3F2、1000 纳米处的 1G4 → 3H4、1070 纳米处的 1D2 → 3F3,4 等典型跃迁外,通过静态和动态光谱分析,3P0 → 1G4 跃迁还在 929 纳米处产生了可区分的近红外发射。最有趣的是,对于 3P0 蓝激发态,约 10%Pr3+ 的高浓度是可见光/近红外发射的最佳浓度,这与 1D2 态稀释后的最佳浓度 1%Pr3+形成了鲜明对比。理论推测和实验结果对 Pr3+ 与 3P0 和 1D2 状态之间的相关交叉弛豫进行了全面处理。这种浓缩的 Pr3+ 蓝色激活剂将通过从 3P0 初始状态到 1G4 中间级的理想两步顺序转换,极大地促进从蓝色到近红外的下变频,使量子效率超过 1。目前的研究成果将巩固聚合 Pr3+ 给体的基础,以促进新型 Pr3+/Yb3+ 共价下转换,从而大大提高硅太阳能电池的效率。
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引用次数: 0
Magnetic casein/CaCO3/Fe3O4 microspheres stimulate osteogenic differentiation 磁性酪蛋白/CaCO3/Fe3O4 微球刺激成骨分化
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-09-03 DOI: 10.1063/5.0229172
Mingjie Zhang, Xiaolei Li, Han Lin
The quality of life is significantly impacted by bone defects, which calls for the creation of optimum restorative materials with particular qualities. Current repair materials, such as metal alloys, polymer scaffolds, and bone cement, have a number of drawbacks, such as poor fracture toughness, non-degradability, and insufficient osteogenic ability. To address these challenges, we designed a novel magnetic casein/CaCO3/Fe3O4 microspheres (CCFM), combining biodegradability, osteoinductivity, osteoconductivity, and osteogenesis properties together. In vitro studies confirmed the outstanding biocompatibility and osteogenic differentiation effects on MC3T3-E1 cells of CCFM, highlighting their potential as a promising bone regeneration platform for clinical applications. As a novel bone repair material with superparamagnetic properties, CCFM not only possess good osteoinductivity, osteoconductivity, and osteogenesis properties but also can remain in the lesion location for a long time under an external magnetic field, representing a significant advancement in the field of bone tissue engineering and offering new possibilities for effective bone defect remediation and patient care.
骨缺损严重影响着人们的生活质量,因此需要创造出具有特殊品质的最佳修复材料。目前的修复材料,如金属合金、聚合物支架和骨水泥,都存在许多缺点,如断裂韧性差、不可降解和成骨能力不足。为解决这些难题,我们设计了一种新型磁性酪蛋白/CaCO3/Fe3O4微球(CCFM),将生物可降解性、骨诱导性、骨传导性和成骨性能结合在一起。体外研究证实,CCFM 具有出色的生物相容性和对 MC3T3-E1 细胞的成骨分化作用,有望成为一种具有临床应用前景的骨再生平台。作为一种具有超顺磁性能的新型骨修复材料,CCFM 不仅具有良好的骨诱导性、骨传导性和成骨性,还能在外加磁场作用下长期存在于病变部位,是骨组织工程领域的一大进步,为有效修复骨缺损和患者护理提供了新的可能。
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引用次数: 0
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in β-Ga2O3 利用(Al, Ga)2O3/Ga2O3 超晶格测量阳离子空位扩散以及β-Ga2O3 中铝、锡和铁随空位浓度变化的扩散情况
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-08-30 DOI: 10.1063/5.0206398
Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A. Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental to semiconductor crystal growth, device processing, and design. However, the transient equilibration of native defects is difficult to directly measure. We used (AlxGa1−x)2O3/Ga2O3 superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000–1100 °C. Using a novel finite difference scheme for diffusion with time- and space-varying diffusion constants, we determined diffusion constants for Al, Fe, and cation vacancies, including the vacancy concentration dependence for Al. In the case of SLs grown on Sn-doped β-Ga2O3 (010) substrates, gradients observed in the extent of Al diffusion indicate a supersaturation of vacancies in the substrates that transiently diffuse through the SLs coupled strongly to Sn and thus slowed compared to undoped cases. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence for the introduction of VGa from the free surface at rates sufficient to affect Al diffusion at at. % concentrations, establishing an upper bound on surface injection. In addition, we show that unintentional impurities in Sn-doped Ga2O3 such as Fe, Ni, Mn, Cu, and Li also diffuse toward the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices, thus suggesting that impurities may require further reduction. This work provides a method to measure transients in diffusion-mediating native defects otherwise hidden in common processes such as ion implantation, etching, and film growth.
空位等原生缺陷的扩散及其与杂质的相互作用是半导体晶体生长、器件加工和设计的基础。然而,原生缺陷的瞬态平衡很难直接测量。我们利用 (AlxGa1-x)2O3/Ga2O3 超晶格(SLs)来检测和分析阳离子空位在 1000-1100 °C的氧气退火过程中的瞬态扩散。我们采用一种新颖的有限差分扩散方案,利用时间和空间变化的扩散常数,确定了铝、铁和阳离子空位的扩散常数,包括铝的空位浓度依赖性。对于生长在掺杂锡的β-Ga2O3(010)基底上的二氧化硅,在铝扩散程度上观察到的梯度表明基底中的空位过饱和,这些空位通过二氧化硅瞬时扩散时与锡的耦合很强,因此与未掺杂的情况相比,扩散速度减慢。在掺杂 Fe 的 (010) 基底上生长的 SLs,铝在 SLs 中的扩散是均匀的,这表明空位的浓度在深度上是均匀的。我们没有发现任何证据表明,自由表面引入 VGa 的速率足以影响浓度为 % 时的铝扩散。%浓度时,没有证据表明 VGa 以足以影响铝扩散的速率从自由表面引入,从而确定了表面注入的上限。此外,我们还发现掺锡 Ga2O3 中的无意杂质(如铁、镍、锰、铜和锂)也会向表面扩散和累积。其中许多杂质可能具有快速的间隙扩散模式,能够破坏器件的稳定性,因此表明杂质可能需要进一步减少。这项工作提供了一种方法来测量扩散介导的原生缺陷的瞬态,否则这些缺陷就会隐藏在离子注入、蚀刻和薄膜生长等常见工艺中。
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引用次数: 0
Electrical conductivity anisotropy of InGaZn3O6 single crystals by pressurized optical floating zone growth and its oxygen annealing effect 加压光学浮区生长 InGaZn3O6 单晶的电导率各向异性及其氧退火效应
IF 6.1 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2024-08-30 DOI: 10.1063/5.0218948
N. Kase, Y. Kawamura, Y. Kobayashi, T. Inoue, K. Tanaka, N. Miyakawa
Large bulk single crystals of InGaZn3O6 (InGaO3(ZnO)3 or IGZO-13) have been successfully grown using an optical floating zone method under a flow of dry-air at high pressure. These crystals exhibit a distinct blue hue in their as-grown state, with notable enhancement in transparency attainable through O2 annealing. Comparative analysis with IGZO-11 reveals a substantial reduction in conductivity following O2 annealing. Moreover, a pronounced in-plane/out-of-plane conductive anisotropy ranging from 100 to 450 is observed, surpassing that of IGZO-11 under similar in-plane conductivity conditions. This increase in electrical conducting anisotropy is ascribed to the incorporation of ZnO blocks amid the two InO layers, aligned along the c axis. Based on these findings, it is concluded that the contribution of In-5s orbitals likely assumes a predominant role, surpassing that of other cations from an experimental standpoint.
在高压干气流条件下,利用光学浮区法成功地生长出了 InGaZn3O6(InGaO3(ZnO)3 或 IGZO-13)的大型块状单晶体。这些晶体在生长状态下呈现出明显的蓝色,通过氧气退火后透明度显著提高。与 IGZO-11 的比较分析表明,氧气退火后导电率大幅降低。此外,还观察到明显的面内/面外导电各向异性,范围从 100 到 450,超过了类似面内导电条件下的 IGZO-11。导电各向异性的增加归因于在沿 c 轴排列的两个 InO 层中加入了 ZnO 块。基于这些发现,我们得出结论:从实验角度来看,In-5s 轨道的作用可能超过其他阳离子,占据主导地位。
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引用次数: 0
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APL Materials
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