High-quality epitaxial Mg3Sb2 thin films are promising thermoelectric materials to enable practical applications of compact and environmentally friendly thermoelectric conversion at room temperature. In this study, high-quality single-crystal Mg3Sb2 with high c-plane orientation were epitaxially grown directly on annealed c-Al2O3 substrates without passive layers. These thin films exhibited three times higher thermoelectric power factor than ever reported values due to high carrier mobility. The ultra-smooth surface of the annealed c-Al2O3 substrate facilitated the formation of high-quality Mg3Sb2 thin films without passive layers or polycrystalline interfaces that could be carrier scatters.
{"title":"Epitaxial growth of high-quality Mg3Sb2 thin films on annealed c-plane Al2O3 substrates and their thermoelectric properties","authors":"Akito Ayukawa, Nozomu Kiridoshi, Wakaba Yamamoto, Akira Yasuhara, Haruhiko Udono, S. Sakane","doi":"10.35848/1882-0786/ad4f4c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4f4c","url":null,"abstract":"\u0000 High-quality epitaxial Mg3Sb2 thin films are promising thermoelectric materials to enable practical applications of compact and environmentally friendly thermoelectric conversion at room temperature. In this study, high-quality single-crystal Mg3Sb2 with high c-plane orientation were epitaxially grown directly on annealed c-Al2O3 substrates without passive layers. These thin films exhibited three times higher thermoelectric power factor than ever reported values due to high carrier mobility. The ultra-smooth surface of the annealed c-Al2O3 substrate facilitated the formation of high-quality Mg3Sb2 thin films without passive layers or polycrystalline interfaces that could be carrier scatters.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141111098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-21DOI: 10.35848/1882-0786/ad4e96
Y. Kusakabe, Katsuyuki Shizu, Hiroyuki Tanaka, Kazuo Tanaka, H. Kaji
The characteristic of inverted singlet-triplet excited states (iST), in which the lowest singlet excited state (S1) is lower than the lowest triplet state (T1) in energy, was observed in a dialkylamine-substituted pentaazaphenalene derivative, 5AP-N(C12)2. The transient PL measurements showed that the reverse intersystem crossing has virtually zero activation energy, whereas the intersystem crossing proceeded by a thermal activation process. T1 was located energetically above S1 with the negative energy gap between S1 and T1 (ΔE ST) of −37 meV. Fluorescence and phosphorescence spectra also confirmed the negative ΔE ST of −46 – −32 meV.
{"title":"An inverted singlet-triplet excited state in a pentaazaphenalene derivative (5AP-N(C12)2)","authors":"Y. Kusakabe, Katsuyuki Shizu, Hiroyuki Tanaka, Kazuo Tanaka, H. Kaji","doi":"10.35848/1882-0786/ad4e96","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4e96","url":null,"abstract":"\u0000 The characteristic of inverted singlet-triplet excited states (iST), in which the lowest singlet excited state (S1) is lower than the lowest triplet state (T1) in energy, was observed in a dialkylamine-substituted pentaazaphenalene derivative, 5AP-N(C12)2. The transient PL measurements showed that the reverse intersystem crossing has virtually zero activation energy, whereas the intersystem crossing proceeded by a thermal activation process. T1 was located energetically above S1 with the negative energy gap between S1 and T1 (ΔE\u0000 ST) of −37 meV. Fluorescence and phosphorescence spectra also confirmed the negative ΔE\u0000 ST of −46 – −32 meV.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141117938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two port feedback has been theoretically studied and proved to be effective in enhancing the degree of entanglement of the output beams for an optical four-wave mixing process, but the loss effects and phase delays need to be further concerned. Here, we use a model that is closer to practical implementation. By reasonably tuning the coefficients, we find that higher degree of entanglement and higher power of the output beams can be obtained, and the requirement for phase locking accuracy could be looser, which means this model is more promising for practical applications in quantum computation and quantum communication.
{"title":"Enhancement of quantum entanglement between twin beams via a four-wave mixing process with double feedback","authors":"Pintian Lv, Junxiang Zhang, Ligang Wang, Jingping Xu, Zhenghong Li, Xihua Yang","doi":"10.35848/1882-0786/ad4e02","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4e02","url":null,"abstract":"\u0000 Two port feedback has been theoretically studied and proved to be effective in enhancing the degree of entanglement of the output beams for an optical four-wave mixing process, but the loss effects and phase delays need to be further concerned. Here, we use a model that is closer to practical implementation. By reasonably tuning the coefficients, we find that higher degree of entanglement and higher power of the output beams can be obtained, and the requirement for phase locking accuracy could be looser, which means this model is more promising for practical applications in quantum computation and quantum communication.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141121712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-17DOI: 10.35848/1882-0786/ad4d3d
Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato
We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.
我们报告了 GaN MOSFET 中增强的场效应迁移率（> 250 cm2-V-1-s-1）。氮化镓表面氧化是影响氮化镓 MOSFET 沟道迁移率的主要因素，而高迁移率是通过减少氮化镓表面氧化实现的。在各种栅极氧化物沉积方法中，使用 O3 的雾 CVD 能抑制 GaN 表面氧化。雾状 CVD 沉积栅极氧化物的场效应迁移率最高，峰值迁移率达到 266 cm2-V-1-s-1，阈值电压高达 4.8 V。
{"title":"Enhanced field-effect mobility (> 250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD","authors":"Kazuki Ikeyama, Hidemoto Tomita, S. Harada, Takashi Okawa, Li Liu, T. Kawaharamura, Hiroki Miyake, Yoshitaka Nagasato","doi":"10.35848/1882-0786/ad4d3d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4d3d","url":null,"abstract":"\u0000 We report an enhanced field-effect mobility (> 250 cm2·V-1·s-1) in GaN MOSFETs. High mobility was achieved by reducing the oxidation of the GaN surface that was a major factor affecting channel mobility in GaN MOSFETs. Among various gate oxide deposition methods, mist CVD using O3 suppressed GaN surface oxidation. The best field-effect mobility was observed using mist CVD-deposited gate oxides, achieving a peak mobility of 266 cm2·V-1·s-1 with a high threshold voltage of 4.8 V.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140962426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A high-power ultrasonic transducer operating on a unique principle for minimally invasive treatments is proposed, capable of treating areas inaccessible by HIFU treatments. This transducer employs two elliptical reflectors that efficiently focus ultrasound waves into a thin waveguide by utilizing mode conversion. Additionally, a slit structure is introduced to suppress wave diffraction, further enhancing the focusing capabilities of the transducer. Finite element analysis demonstrates that the proposed transducer achieves an impressive energy density magnification factor of 325, with an energy efficiency of 24.2%. This efficiency is 3.4 times higher than that of a conventional transducer, DPLUS.
{"title":"An ultrasonic transducer focusing ultrasound into a thin waveguide by two elliptical reflectors","authors":"Shoki Ieiri, Kyohei Yamada, T. Sasamura, Shinsuke Itoh, Takashi Kasashima, Takeshi Morita","doi":"10.35848/1882-0786/ad4d3c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4d3c","url":null,"abstract":"\u0000 A high-power ultrasonic transducer operating on a unique principle for minimally invasive treatments is proposed, capable of treating areas inaccessible by HIFU treatments. This transducer employs two elliptical reflectors that efficiently focus ultrasound waves into a thin waveguide by utilizing mode conversion. Additionally, a slit structure is introduced to suppress wave diffraction, further enhancing the focusing capabilities of the transducer. Finite element analysis demonstrates that the proposed transducer achieves an impressive energy density magnification factor of 325, with an energy efficiency of 24.2%. This efficiency is 3.4 times higher than that of a conventional transducer, DPLUS.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140964686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.35848/1882-0786/ad4b93
Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long
β-Ga2O3 power diodes were expected to possess low turn-on voltage (Von), low reverse leakage (JR), and high blocking capability for low power losses. In this work, a low Von (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with Tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress JR originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes.
{"title":"High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact","authors":"Qiuyan Li, Weibing Hao, Jinyang Liu, Zhao Han, Song He, Xuanze Zhou, Guangwei Xu, Shibing Long","doi":"10.35848/1882-0786/ad4b93","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4b93","url":null,"abstract":"\u0000 β-Ga2O3 power diodes were expected to possess low turn-on voltage (Von), low reverse leakage (JR), and high blocking capability for low power losses. In this work, a low Von (0.48 V) β-Ga2O3 heterojunction barrier Schottky diode (HJBS) with Tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p+-NiO to suppress JR originating from the low Schottky barrier, the blocking capability of β-Ga2O3 HJBS was enhanced. The spacing width of p+-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga2O3 diodes.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140978620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-13DOI: 10.35848/1882-0786/ad45ad
Yohei Sugiyama, Yuga Kondo, Tomoyuki Horikiri, Daisuke Akamatsu and Feng-Lei Hong
We propose a scheme to phase lock a quantum-memory control laser, frequency-conversion pump laser, and two-photon source over three octaves in frequency to operate a quantum memory. The absolute frequencies of the laser sources are determined based on a Doppler-free iodine hyperfine transition. The achieved relative frequency instability and uncertainty were ≤1 × 10–12 and 3 × 10–11, respectively, which are below the requirement for operating a Pr:YSO quantum memory. This scheme simplifies the instrumentation of laser sources in a quantum repeater, and increases the reliability of quantum communication systems.
{"title":"Phase locking and absolute frequency stabilization of laser sources for a Pr:YSO quantum memory","authors":"Yohei Sugiyama, Yuga Kondo, Tomoyuki Horikiri, Daisuke Akamatsu and Feng-Lei Hong","doi":"10.35848/1882-0786/ad45ad","DOIUrl":"https://doi.org/10.35848/1882-0786/ad45ad","url":null,"abstract":"We propose a scheme to phase lock a quantum-memory control laser, frequency-conversion pump laser, and two-photon source over three octaves in frequency to operate a quantum memory. The absolute frequencies of the laser sources are determined based on a Doppler-free iodine hyperfine transition. The achieved relative frequency instability and uncertainty were ≤1 × 10–12 and 3 × 10–11, respectively, which are below the requirement for operating a Pr:YSO quantum memory. This scheme simplifies the instrumentation of laser sources in a quantum repeater, and increases the reliability of quantum communication systems.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141061115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on an approach to produce single photon emitters at the SiO2/SiC interface. We form a high-quality SiO2/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO2/SiC interface.
{"title":"Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures","authors":"Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi","doi":"10.35848/1882-0786/ad4449","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4449","url":null,"abstract":"We report on an approach to produce single photon emitters at the SiO<sub>2</sub>/SiC interface. We form a high-quality SiO<sub>2</sub>/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO<sub>2</sub>/SiC interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140927531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-10DOI: 10.35848/1882-0786/ad4a1d
Dan Wu, Wen Dong, Y. Ge, Xueqin Cao, Mingjian Shi, Erkang Li, Nan Ma, Yixuan Zhou, Yuan‐yuan Huang, Chunhui Lu, Xinlong Xu
Nonlinear optical materials, especially two-dimensional materials, are anticipated to reveal broadband optical nonlinearity for future miniaturized photonic applications. Herein, we report a physical vapor deposition method to produce β-In2Se3 thin film and investigate the broadband nonlinear absorption (β) and refraction (n2) characteristics. The β-In2Se3 semiconductor shows an excellent optical nonlinearity with large β in 10^2 cm/GW scale and n2 in 10^-12 cm2/W scale from visible to near-infrared wavelengths, which are superior to those of metal carbides and nitrides (MXenes) and metal-organic frameworks (MOFs). This excellent optical nonlinearity makes β-In2Se3 a promising candidate for advanced nanophotonic devices and beyond.
{"title":"Large nonlinear optical absorption and refraction of β-In2Se3 thin film from above to below bandgap excitation","authors":"Dan Wu, Wen Dong, Y. Ge, Xueqin Cao, Mingjian Shi, Erkang Li, Nan Ma, Yixuan Zhou, Yuan‐yuan Huang, Chunhui Lu, Xinlong Xu","doi":"10.35848/1882-0786/ad4a1d","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4a1d","url":null,"abstract":"\u0000 Nonlinear optical materials, especially two-dimensional materials, are anticipated to reveal broadband optical nonlinearity for future miniaturized photonic applications. Herein, we report a physical vapor deposition method to produce β-In2Se3 thin film and investigate the broadband nonlinear absorption (β) and refraction (n2) characteristics. The β-In2Se3 semiconductor shows an excellent optical nonlinearity with large β in 10^2 cm/GW scale and n2 in 10^-12 cm2/W scale from visible to near-infrared wavelengths, which are superior to those of metal carbides and nitrides (MXenes) and metal-organic frameworks (MOFs). This excellent optical nonlinearity makes β-In2Se3 a promising candidate for advanced nanophotonic devices and beyond.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140991799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-09DOI: 10.35848/1882-0786/ad4955
Hideo Doi, Yushi Osada, Yusuke Tachino, Koji Okuwaki, M. Goh, Ryugo Tero, Yuji Mochizuki
Lipid domains play a critical role in signal transduction and transport across cell membranes. The formation of domains in "HLC" ternary lipid bilayers composed of high transition temperature (high-Tm) lipids, low-Tm lipids, and cholesterol (Chol) has been extensively studied as a raft-like system. Recently, experiments were performed to control the formation of submicron domains in LLC lipid bilayers containing low-Tm phosphatidylethanolamine (PE), low-Tm phosphatidylcholine (PC), and Chol by manipulating the presence or absence of Chol. The formation of microdomains in this LLC mixture was replicated by dissipative particle dynamics (DPD) simulation. The results show that domain formation can be replicated.
{"title":"DPD simulation to reproduce lipid membrane microdomains based on fragment molecular orbital calculations","authors":"Hideo Doi, Yushi Osada, Yusuke Tachino, Koji Okuwaki, M. Goh, Ryugo Tero, Yuji Mochizuki","doi":"10.35848/1882-0786/ad4955","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4955","url":null,"abstract":"\u0000 Lipid domains play a critical role in signal transduction and transport across cell membranes. The formation of domains in \"HLC\" ternary lipid bilayers composed of high transition temperature (high-Tm) lipids, low-Tm lipids, and cholesterol (Chol) has been extensively studied as a raft-like system. Recently, experiments were performed to control the formation of submicron domains in LLC lipid bilayers containing low-Tm phosphatidylethanolamine (PE), low-Tm phosphatidylcholine (PC), and Chol by manipulating the presence or absence of Chol. The formation of microdomains in this LLC mixture was replicated by dissipative particle dynamics (DPD) simulation. The results show that domain formation can be replicated.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140995297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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