Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current–voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion.
{"title":"Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation","authors":"Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato","doi":"10.35848/1882-0786/ad6be5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6be5","url":null,"abstract":"Bipolar degradation is a critical problem in Silicon carbide devices, caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations. This paper presents the effects of helium implantation on the suppression of 1SSFs expansion. The fabricated PiN diodes were analyzed using current–voltage characteristics and electroluminescence imaging. The results show that helium implantation can effectively suppress 1SSFs expansion without significantly degrading diode performance. We consider that this suppression is due to the pinning of dislocations by point defects introduced during helium implantation, and the reduction of carrier lifetime may also play a role in suppressing 1SSFs expansion.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"2 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In lithography, the development process is essential for achieving high fidelity. The quartz crystal microbalance (QCM) method is a primary tool for analyzing the dissolution kinetics of resist polymers by measuring their frequency and impedance. However, impedance charts are underutilized. We propose a stratified polymer dissolution model (SPDM) to simulate polymer dissolution in developers and analyze QCM charts. Using SPDM, we accurately reproduced both the frequency and impedance charts. The feature values describing the dissolution kinetics were successfully extracted from the QCM charts, enabling the investigation of the effects of developers on dissolution kinetics.
{"title":"Stratified polymer dissolution model based on impedance data from quartz crystal microbalance method","authors":"Yuqing Jin, Yuko Tsutsui Ito, Takahiro Kozawa, Takashi Hasebe, Kazuo Sakamoto, Makoto Muramatsu","doi":"10.35848/1882-0786/ad6ad0","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6ad0","url":null,"abstract":"In lithography, the development process is essential for achieving high fidelity. The quartz crystal microbalance (QCM) method is a primary tool for analyzing the dissolution kinetics of resist polymers by measuring their frequency and impedance. However, impedance charts are underutilized. We propose a stratified polymer dissolution model (SPDM) to simulate polymer dissolution in developers and analyze QCM charts. Using SPDM, we accurately reproduced both the frequency and impedance charts. The feature values describing the dissolution kinetics were successfully extracted from the QCM charts, enabling the investigation of the effects of developers on dissolution kinetics.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"28 16 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We proposed a tunable high-order micro-perforated panel metamaterial for broadband absorption, in which the energy dissipation modes is reconstructed by the cavity partition plates. Owing to the more degrees of freedom in impedance design, the metamaterial not only obtains multiple perfect absorption peaks with broader bandwidth, but also allows for flexible frequency regulations. By coupling 12 high-order cells, the metamaterial finally achieves a smooth spectrum with 94% average absorption across the range of 300–3200 Hz, which is verified by the simulation and experiment. This metamaterial could have great applications in noise control engineering owing to the extraordinary performance.
{"title":"A tunable high-order micro-perforated panel metamaterial with low-frequency broadband acoustic absorption","authors":"Chongrui Liu, Xiaoli Liu, Zexiang Xie, Jiu Hui Wu, Fuyin Ma","doi":"10.35848/1882-0786/ad6956","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6956","url":null,"abstract":"We proposed a tunable high-order micro-perforated panel metamaterial for broadband absorption, in which the energy dissipation modes is reconstructed by the cavity partition plates. Owing to the more degrees of freedom in impedance design, the metamaterial not only obtains multiple perfect absorption peaks with broader bandwidth, but also allows for flexible frequency regulations. By coupling 12 high-order cells, the metamaterial finally achieves a smooth spectrum with 94% average absorption across the range of 300–3200 Hz, which is verified by the simulation and experiment. This metamaterial could have great applications in noise control engineering owing to the extraordinary performance.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"6 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142198464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.35848/1882-0786/ad6955
Gabriel Gandubert, Joel Edouard Nkeck, Xavier Ropagnol, Denis Morris, François Blanchard
This work presents methods for addressing undesirable thermal effects induced by the pump beam of an oscillator laser to improve the efficiency of a terahertz (THz) spintronic emitter. We explore two approaches: spatial distribution of pump energy using a 2D lens array and temporal modulation of the pump duty cycle. Optimizing the spatial distribution approximately doubles the THz signal by increasing local heat dissipation, delaying the saturation limit. Similarly, temporal spreading of pump pulses by adjusting the duty cycle allows greater thermal relaxation within the heterostructure, enhancing the overall efficiency of THz wave generation.
{"title":"Spatial and temporal thermal management of a spintronic terahertz emitter","authors":"Gabriel Gandubert, Joel Edouard Nkeck, Xavier Ropagnol, Denis Morris, François Blanchard","doi":"10.35848/1882-0786/ad6955","DOIUrl":"https://doi.org/10.35848/1882-0786/ad6955","url":null,"abstract":"This work presents methods for addressing undesirable thermal effects induced by the pump beam of an oscillator laser to improve the efficiency of a terahertz (THz) spintronic emitter. We explore two approaches: spatial distribution of pump energy using a 2D lens array and temporal modulation of the pump duty cycle. Optimizing the spatial distribution approximately doubles the THz signal by increasing local heat dissipation, delaying the saturation limit. Similarly, temporal spreading of pump pulses by adjusting the duty cycle allows greater thermal relaxation within the heterostructure, enhancing the overall efficiency of THz wave generation.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"12 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report first-principles calculations that unveil elementary processes of nitrogen donor doping during epitaxial growth of silicon carbide (SiC). We find that a N2 molecule adsorbed on the terrace migrates to a particular step edge where under-coordinated Si atoms appear, or is directly adsorbed near the step edge, and then dissociated there via the step-molecule interaction. This results in the N atom being eventually incorporated at the C substitutional site of the step. The calculated energy barriers indicate that the N incorporation reactions at the step edges occur at a typically high temperature in SiC epitaxial growth.
我们报告的第一原理计算揭示了碳化硅（SiC）外延生长过程中氮供体掺杂的基本过程。我们发现，吸附在台阶上的 N2 分子会迁移到出现欠配位硅原子的特定台阶边缘，或者直接吸附在台阶边缘附近，然后通过台阶-分子相互作用在那里解离。这就导致 N 原子最终结合到阶梯的 C 置换位点上。计算得出的能垒表明，在碳化硅外延生长过程中，阶梯边缘的 N 原子掺入反应通常发生在较高的温度下。
{"title":"Microscopic mechanisms of nitrogen doping in silicon carbide during epitaxial growth","authors":"Souichiro Yamauchi, Ichiro Mizushima, Takashi Yoda, Atsushi Oshiyama, Kenji Shiraishi","doi":"10.35848/1882-0786/ad524c","DOIUrl":"https://doi.org/10.35848/1882-0786/ad524c","url":null,"abstract":"We report first-principles calculations that unveil elementary processes of nitrogen donor doping during epitaxial growth of silicon carbide (SiC). We find that a N<sub>2</sub> molecule adsorbed on the terrace migrates to a particular step edge where under-coordinated Si atoms appear, or is directly adsorbed near the step edge, and then dissociated there via the step-molecule interaction. This results in the N atom being eventually incorporated at the C substitutional site of the step. The calculated energy barriers indicate that the N incorporation reactions at the step edges occur at a typically high temperature in SiC epitaxial growth.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"27 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142225285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-06DOI: 10.35848/1882-0786/ad65b4
H Zeng, C Ma and M Wu
2D Ga2O3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga2O3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ* anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm2V−1s−1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.
{"title":"Ultra-high electron mobility in Sn-doped two-dimensional Ga2O3 modified by biaxial strain and electric field","authors":"H Zeng, C Ma and M Wu","doi":"10.35848/1882-0786/ad65b4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad65b4","url":null,"abstract":"2D Ga2O3 exhibits overwhelming advantages over its bulk counterpart, whereas manipulating the carriers is rare. We report strain-dependent electronic structures and transport properties of Sn-doped 2D Ga2O3 using first-principles calculations with deformation potential theory. The band gaps are tunable from 2.23 eV to 1.20 eV due to the strain-mediated σ* anti-bonding and π bonding state variations. Specifically, ultra-high electron mobility of 22579.32 cm2V−1s−1 is predicated under 8% tensile. Further electric field modulations suggest the retaining of band gap and effective mass. These results highlight its property manipulations and nanoscale electronic applications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"19 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-04DOI: 10.35848/1882-0786/ad52e5
Takehito Suzuki, Kota Endo, Takahito Haruishi, Kazuisao Tsuruda, Kouhei Urashima and Shunji Yamamori
Terahertz flat optics based on metasurfaces can replace massive optical components with optically thin components. However, metasurfaces with unprecedented material properties frequently produce a specified function, and terahertz flat optics has yet to be commonly adopted in terahertz devices that require multiple functions. Here, we present a two-layer component composed of a collimating metalens and a quarter-wave plate that convert linearly polarized terahertz wide-angle radiation waves from a resonant tunneling diode to circularly polarized plane waves. Our findings would be applied to laminate structures with optical vortices, ultrahigh directivity and arbitrary wavefront control in 6 G wireless communications.
基于元表面的太赫兹平面光学技术可以用光学薄型元件取代大型光学元件。然而，具有前所未有材料特性的元表面通常只能产生一种特定功能，而太赫兹平面光学技术尚未在需要多种功能的太赫兹设备中得到普遍应用。在这里，我们介绍了一种由准直金属片和四分之一波板组成的双层组件，它能将来自共振隧道二极管的线性偏振太赫兹广角辐射波转换为圆偏振平面波。我们的研究成果将应用于 6 G 无线通信中具有光学漩涡、超高指向性和任意波前控制的层压结构。
{"title":"Circularly polarized plane terahertz waves radiated from a resonant tunneling diode integrated with a collimating metalens and quarter-wave plate","authors":"Takehito Suzuki, Kota Endo, Takahito Haruishi, Kazuisao Tsuruda, Kouhei Urashima and Shunji Yamamori","doi":"10.35848/1882-0786/ad52e5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad52e5","url":null,"abstract":"Terahertz flat optics based on metasurfaces can replace massive optical components with optically thin components. However, metasurfaces with unprecedented material properties frequently produce a specified function, and terahertz flat optics has yet to be commonly adopted in terahertz devices that require multiple functions. Here, we present a two-layer component composed of a collimating metalens and a quarter-wave plate that convert linearly polarized terahertz wide-angle radiation waves from a resonant tunneling diode to circularly polarized plane waves. Our findings would be applied to laminate structures with optical vortices, ultrahigh directivity and arbitrary wavefront control in 6 G wireless communications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"66 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.35848/1882-0786/ad64ba
Takayoshi Oshima, Masataka Imura, Yuichi Oshima
GaN mesas were fabricated by sequential dry and wet etching of a +c-oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by m-plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable −c surface of the GaN layer, which formed reverse-tapered {101¯2¯} facets. The protrusions were sacrificed during the wet etching to prevent undesirable positive tapering at the vertices.
通过在晶格匹配的 AlInN 层上依次干法和湿法蚀刻+c 方向的 GaN 层，制备了 GaN 介面，用于未来的正斜边端接应用，以防止功率器件过早击穿。干法蚀刻产生了由 m 平面侧壁包围的六边形 AlInN/GaN 介面，其顶点有六个突起。随后的热磷酸蚀刻选择性地蚀刻了 AlInN 层，暴露并蚀刻了 GaN 层化学性质不稳定的 -c 表面，形成了反锥形的 {101¯2¯} 面。在湿法蚀刻过程中牺牲了突起，以防止顶点出现不理想的正锥形。
{"title":"Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination","authors":"Takayoshi Oshima, Masataka Imura, Yuichi Oshima","doi":"10.35848/1882-0786/ad64ba","DOIUrl":"https://doi.org/10.35848/1882-0786/ad64ba","url":null,"abstract":"GaN mesas were fabricated by sequential dry and wet etching of a +<italic toggle=\"yes\">c</italic>-oriented GaN layer onto a lattice-matched AlInN layer for future applications of positive beveled edge termination, which is desirable for preventing premature breakdown of power devices. The dry etching produced hexagonal AlInN/GaN mesas surrounded by <italic toggle=\"yes\">m</italic>-plane sidewalls with six protrusions at the vertices. The subsequent hot phosphoric acid etching selectively etched the AlInN layer to expose and etch the chemically unstable −<italic toggle=\"yes\">c</italic> surface of the GaN layer, which formed reverse-tapered {<inline-formula>\u0000<tex-math>\u0000<?CDATA $10bar{1}bar{2}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mn>10</mml:mn><mml:mover accent=\"true\"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mo>¯</mml:mo></mml:mover><mml:mover accent=\"true\"><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mo>¯</mml:mo></mml:mover></mml:math>\u0000<inline-graphic xlink:href=\"apexad64baieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>} facets. The protrusions were sacrificed during the wet etching to prevent undesirable positive tapering at the vertices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"36 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.35848/1882-0786/ad59f4
Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai
Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.
由于固态自旋中心的量子比特性能在很大程度上取决于宿主材料，因此使用新宿主材料的自旋中心可能会提供新的量子比特应用。我们研究了作为容纳光学可及量子比特的潜在材料的 Ce-implanted MgO 和 MgAl2O4 的光学特性。我们发现，Ce 植入 MgAl2O4 的光致发光比 Ce 植入 MgO 的光致发光亮 10 倍以上，并观察到 MgAl2O4 中的 Ce 中心在 4 K 下 500 mT 的偏振依赖性发射率为 2%，这表明已经实现了初始化和读取自旋量子比特状态所需的特性。
{"title":"Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4","authors":"Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai","doi":"10.35848/1882-0786/ad59f4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f4","url":null,"abstract":"Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"84 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.35848/1882-0786/ad5c27
Safumi Suzuki and Masahiro Asada
During the last two decades, rapid advancements in RT oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for HF operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews, the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.
{"title":"Fundamentals and recent advances of terahertz resonant tunneling diodes","authors":"Safumi Suzuki and Masahiro Asada","doi":"10.35848/1882-0786/ad5c27","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c27","url":null,"abstract":"During the last two decades, rapid advancements in RT oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for HF operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews, the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：