Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad5bbe
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi
We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.
我们发现，在肖特基势垒二极管中通过卤化物气相外延沉积的 (001) β-Ga2O3 外延层上的微凹槽是反向漏电流流[-64 V 时为 -10.0 μA]点的杀手级缺陷。微槽倾向于沿[010]方向排列，每个微槽由(100)、(001)和( 02)低指数微面组成。微槽的[00]侧存在多晶缺陷。微槽底部的电场在 50 V 时达到 5.27 × 105 V cm-1，大约是平面电场的两倍。
{"title":"Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography","authors":"Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi","doi":"10.35848/1882-0786/ad5bbe","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbe","url":null,"abstract":"We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad5e5a
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.
{"title":"Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor","authors":"Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu","doi":"10.35848/1882-0786/ad5e5a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5e5a","url":null,"abstract":"This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"57 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad59f5
Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao
In this study, we propose a strategy to construct high-performance ultra-thin optical power converters (OPCs) based on Gires–Tournois resonator configurations operating in high-order modes. Despite reducing the absorber thickness by 5.8 to 8.1 times, the proposed ultra-thin OPCs exhibit the same (comparable) energy absorption characteristic and demonstrate superior electrical performance compared to a thick OPC. It is revealed that such high absorption effects originated from the excitation of optical asymmetric Fabry–Perot-type high-order inference resonance modes and the electrical performance enhancement can be attributed to the reduction of the absorber thickness.
{"title":"Ultra-thin optical power converters based on Gires–Tournois resonator configuration operating in high-order modes","authors":"Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao","doi":"10.35848/1882-0786/ad59f5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f5","url":null,"abstract":"In this study, we propose a strategy to construct high-performance ultra-thin optical power converters (OPCs) based on Gires–Tournois resonator configurations operating in high-order modes. Despite reducing the absorber thickness by 5.8 to 8.1 times, the proposed ultra-thin OPCs exhibit the same (comparable) energy absorption characteristic and demonstrate superior electrical performance compared to a thick OPC. It is revealed that such high absorption effects originated from the excitation of optical asymmetric Fabry–Perot-type high-order inference resonance modes and the electrical performance enhancement can be attributed to the reduction of the absorber thickness.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"45 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad5c26
Makoto Tachibana, Cédric Bourgès and Takao Mori
BaZrO3 and KTaO3 are two rare examples of perovskite oxides that retain the ideal cubic structure down to the lowest temperature. In this paper, we report thermal conductivity (κ) between 300 and 773 K on single crystals of these compounds. For BaZrO3, the κ of 7.5 Wm−1K−1 at 300 K is ∼40% larger than the previously reported polycrystalline values. For KTaO3, our value of 13.1 Wm−1K−1 at 300 K clarifies the sources of error in some of the previously reported data. These results underscore the importance of high-quality experimental data in benchmarking the accuracy of advanced first-principles κ calculations.
BaZrO3 和 KTaO3 是包晶氧化物中两个罕见的例子，它们能在最低温度下保持理想的立方结构。本文报告了这些化合物单晶体在 300 至 773 K 之间的热导率（κ）。对于 BaZrO3，300 K 时的 κ 为 7.5 Wm-1K-1，比之前报告的多晶值大 40%。对于 KTaO3，我们在 300 K 时得出的 13.1 Wm-1K-1 值澄清了之前报告的一些数据的误差来源。这些结果凸显了高质量实验数据在衡量先进的第一原理κ计算精度方面的重要性。
{"title":"Thermal conductivity of BaZrO3 and KTaO3 single crystals","authors":"Makoto Tachibana, Cédric Bourgès and Takao Mori","doi":"10.35848/1882-0786/ad5c26","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c26","url":null,"abstract":"BaZrO3 and KTaO3 are two rare examples of perovskite oxides that retain the ideal cubic structure down to the lowest temperature. In this paper, we report thermal conductivity (κ) between 300 and 773 K on single crystals of these compounds. For BaZrO3, the κ of 7.5 Wm−1K−1 at 300 K is ∼40% larger than the previously reported polycrystalline values. For KTaO3, our value of 13.1 Wm−1K−1 at 300 K clarifies the sources of error in some of the previously reported data. These results underscore the importance of high-quality experimental data in benchmarking the accuracy of advanced first-principles κ calculations.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"12 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.35848/1882-0786/ad5bbd
Shin-ichiro Sato, Takao Oto
We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4F3/2–4I9/2 and 4F3/2–4I11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.
{"title":"Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor","authors":"Shin-ichiro Sato, Takao Oto","doi":"10.35848/1882-0786/ad5bbd","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbd","url":null,"abstract":"We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>9/2</sub> and <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>11/2</sub> transitions (916 and 1107 nm) in Nd<sup>3+</sup>. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"49 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-30DOI: 10.35848/1882-0786/ad5949
Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen and Edward Yi Chang
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (Rc) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at VDS = 28 V, and an OIP3/PDC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at VDS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.
{"title":"High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications","authors":"Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen and Edward Yi Chang","doi":"10.35848/1882-0786/ad5949","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5949","url":null,"abstract":"In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (Rc) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at VDS = 28 V, and an OIP3/PDC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at VDS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"20 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141510216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
APbX3-type [A = CH3NH3+ (MA+), NH2CH=NH2+ (FA+), X = Cl–, Br–, I–] organic–inorganic perovskite nanocrystals (PeNCs) have superior optical properties, such as emission with a narrow full width at half maximum and emission color tunability over the entire visible range. However, blue-emitting PeNCs [APb(Br/Cl)3] exhibit low photoluminescence quantum yields owing to Cl defects, hindering their practical applications. The Cl defects induce nonradiative recombination caused by the trap levels formed deep in the band gap. Herein, we report the preparation of blue-emitting PeNCs that exhibit excellent optical properties by using NaBH4 to decrease the number of Cl defects.
{"title":"Blue-emitting perovskite nanocrystals with enhanced optical properties through using NaBH4","authors":"Mao Goto, Naoaki Oshita, Kenshin Yoshida, Takuro Iizuka, Yusaku Morikawa, Hiroto Shimizu, Ryota Kobayashi, Takayuki Chiba, Satoshi Asakura and Akito Masuhara","doi":"10.35848/1882-0786/ad52e6","DOIUrl":"https://doi.org/10.35848/1882-0786/ad52e6","url":null,"abstract":"APbX3-type [A = CH3NH3+ (MA+), NH2CH=NH2+ (FA+), X = Cl–, Br–, I–] organic–inorganic perovskite nanocrystals (PeNCs) have superior optical properties, such as emission with a narrow full width at half maximum and emission color tunability over the entire visible range. However, blue-emitting PeNCs [APb(Br/Cl)3] exhibit low photoluminescence quantum yields owing to Cl defects, hindering their practical applications. The Cl defects induce nonradiative recombination caused by the trap levels formed deep in the band gap. Herein, we report the preparation of blue-emitting PeNCs that exhibit excellent optical properties by using NaBH4 to decrease the number of Cl defects.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"360 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.35848/1882-0786/ad548f
Maolin Dai, Bowen Liu, Yifan Ma, Takuma Shirahata, Ruoao Yang, Zhigang Zhang, Sze Yun Set and Shinji Yamashita
We demonstrate a 783 MHz fundamental repetition rate mode-locked Er-doped all-fiber ring laser with a pulse width of 623 fs. By using carbon nanotubes saturable absorber, a relatively low self-starting pump threshold of 108 mW is achieved. The laser has a very compact footprint less than 10 cm × 10 cm, benefiting from the all-active-fiber cavity design. The robust mode-locking is confirmed by the low relative intensity noise and a long-term stability test. We propose a new scheme for generating high repetition rate femtosecond optical pulses from a compact and stable all-active-fiber ring oscillator.
{"title":"783 MHz fundamental repetition rate all-fiber ring laser mode-locked by carbon nanotubes","authors":"Maolin Dai, Bowen Liu, Yifan Ma, Takuma Shirahata, Ruoao Yang, Zhigang Zhang, Sze Yun Set and Shinji Yamashita","doi":"10.35848/1882-0786/ad548f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad548f","url":null,"abstract":"We demonstrate a 783 MHz fundamental repetition rate mode-locked Er-doped all-fiber ring laser with a pulse width of 623 fs. By using carbon nanotubes saturable absorber, a relatively low self-starting pump threshold of 108 mW is achieved. The laser has a very compact footprint less than 10 cm × 10 cm, benefiting from the all-active-fiber cavity design. The robust mode-locking is confirmed by the low relative intensity noise and a long-term stability test. We propose a new scheme for generating high repetition rate femtosecond optical pulses from a compact and stable all-active-fiber ring oscillator.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"20 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141522999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.35848/1882-0786/ad4468
Shuji Hasegawa
Electronic states at the boundaries of crystals, such as surfaces, interfaces, edges, hinges, corners, and extremities, play crucial roles in emerging quantum materials, such as graphene and similar monatomic-layer materials, van der Waals crystals, and topological insulators. Electronic states at such boundaries are different from those inside the three- or two-dimensional crystals, not only because of the truncation of crystal lattices but also because of space-inversion-symmetry breaking and difference in topology in band structures across the boundaries. Such quantum materials are expected to advance energy-saving/-harvesting technology as well as quantum computing/information technology because of exotic phenomena, such as spin–momentum locking of an electron, pure spin current, dissipation-less charge current, nonreciprocal current, and possible Majorana fermions. In this review, their fundamental concepts are introduced from the viewpoint of surface physics, in which atomic and electronic structures, as well as charge/spin transport properties, are directly probed using state-of-the-art techniques.
{"title":"Surface and interface physics driven by quantum materials","authors":"Shuji Hasegawa","doi":"10.35848/1882-0786/ad4468","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4468","url":null,"abstract":"Electronic states at the boundaries of crystals, such as surfaces, interfaces, edges, hinges, corners, and extremities, play crucial roles in emerging quantum materials, such as graphene and similar monatomic-layer materials, van der Waals crystals, and topological insulators. Electronic states at such boundaries are different from those inside the three- or two-dimensional crystals, not only because of the truncation of crystal lattices but also because of space-inversion-symmetry breaking and difference in topology in band structures across the boundaries. Such quantum materials are expected to advance energy-saving/-harvesting technology as well as quantum computing/information technology because of exotic phenomena, such as spin–momentum locking of an electron, pure spin current, dissipation-less charge current, nonreciprocal current, and possible Majorana fermions. In this review, their fundamental concepts are introduced from the viewpoint of surface physics, in which atomic and electronic structures, as well as charge/spin transport properties, are directly probed using state-of-the-art techniques.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"1 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141550957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-23DOI: 10.35848/1882-0786/ad45ae
Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe and Takuma Kobayashi
We investigated the abundance, structures, energy levels, and spin states of oxygen-related defects in 4H-SiC on the basis of first-principles calculations. We applied a hybrid functional in the overall calculations, which gives reliable defect properties, and also considered relevant defect charge states. We identified the oxygen interstitial (Oi,1), substitutional oxygen (OC), and oxygen-vacancy (OCVSi) complex as prominent defects in n-type conditions. Among them, OCVSi was predicted as a spin-1 defect with NIR emission in a previous study. On the basis of the obtained results, we discuss the possible spin decoherence sources when employing OCVSi as a spin-to-photon interface.
我们在第一原理计算的基础上研究了 4H-SiC 中氧相关缺陷的丰度、结构、能级和自旋态。我们在整体计算中应用了混合函数，该函数给出了可靠的缺陷特性，同时还考虑了相关的缺陷电荷态。我们发现间隙氧（Oi,1）、置换氧（OC）和氧空位（OCVSi）复合物是 n 型条件下的突出缺陷。其中，OCVSi 在之前的研究中被预测为具有近红外发射的自旋-1 缺陷。根据所获得的结果，我们讨论了将 OCVSi 用作自旋光子界面时可能存在的自旋退相干源。
{"title":"Oxygen-related defects in 4H-SiC from first principles","authors":"Sosuke Iwamoto, Takayoshi Shimura, Heiji Watanabe and Takuma Kobayashi","doi":"10.35848/1882-0786/ad45ae","DOIUrl":"https://doi.org/10.35848/1882-0786/ad45ae","url":null,"abstract":"We investigated the abundance, structures, energy levels, and spin states of oxygen-related defects in 4H-SiC on the basis of first-principles calculations. We applied a hybrid functional in the overall calculations, which gives reliable defect properties, and also considered relevant defect charge states. We identified the oxygen interstitial (Oi,1), substitutional oxygen (OC), and oxygen-vacancy (OCVSi) complex as prominent defects in n-type conditions. Among them, OCVSi was predicted as a spin-1 defect with NIR emission in a previous study. On the basis of the obtained results, we discuss the possible spin decoherence sources when employing OCVSi as a spin-to-photon interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"87 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141152333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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