Pub Date : 2024-07-22DOI: 10.35848/1882-0786/ad665f
Tatsuya Meguro, Masayuki Tsutsumi, A. Takeyama, T. Ohshima, Yasunori Tanaka, S. Kuroki
For radiation-hardened CMOS image sensor (CIS), 4H-SiC 64-pixel array CMOS image sensors were developed, and the real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and optical lens, and then SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays were developed.
{"title":"4H-SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays","authors":"Tatsuya Meguro, Masayuki Tsutsumi, A. Takeyama, T. Ohshima, Yasunori Tanaka, S. Kuroki","doi":"10.35848/1882-0786/ad665f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad665f","url":null,"abstract":"\u0000 For radiation-hardened CMOS image sensor (CIS), 4H-SiC 64-pixel array CMOS image sensors were developed, and the real time imaging with an operation frequency of 30 Hz was demonstrated. Two types of pixel arrays with a 3-transistor active pixel sensor (3T-APS) and a 4-transistor active pixel sensor (4T-APS) were fabricated with SiC MOSFETs, UV photodiodes and 3-layered Al interconnections. The SiC pixel arrays were combined with peripheral circuits and optical lens, and then SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays were developed.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.35848/1882-0786/ad65b3
Kazuki Tomigahara, Masahiro Hara, M. Nozaki, Takuma Kobayashi, Heiji Watanabe
In this study, impacts of post-deposition annealing (PDA) on hole trap generation at SiO2/p-GaN MOS interfaces are investigated. While the surface potential is strongly pinned due to severe hole trapping after 800°C PDA, successful hole accumulation is observed when PDA is performed at 200°C. The density of interface hole traps causing surface potential pinning, extracted from the hump in capacitance-voltage curves, is about 1012 cm−2 with 200°C PDA, while over 1013 cm−2 when the PDA temperature exceeds 600°C, regardless of the annealing ambient. Consequently, the origin of these hole traps is speculated to be defects generated by thermal effects.
{"title":"Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces","authors":"Kazuki Tomigahara, Masahiro Hara, M. Nozaki, Takuma Kobayashi, Heiji Watanabe","doi":"10.35848/1882-0786/ad65b3","DOIUrl":"https://doi.org/10.35848/1882-0786/ad65b3","url":null,"abstract":"\u0000 In this study, impacts of post-deposition annealing (PDA) on hole trap generation at SiO2/p-GaN MOS interfaces are investigated. While the surface potential is strongly pinned due to severe hole trapping after 800°C PDA, successful hole accumulation is observed when PDA is performed at 200°C. The density of interface hole traps causing surface potential pinning, extracted from the hump in capacitance-voltage curves, is about 1012 cm−2 with 200°C PDA, while over 1013 cm−2 when the PDA temperature exceeds 600°C, regardless of the annealing ambient. Consequently, the origin of these hole traps is speculated to be defects generated by thermal effects.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141823038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.35848/1882-0786/ad59f4
Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai
Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.
由于固态自旋中心的量子比特性能在很大程度上取决于宿主材料，因此使用新宿主材料的自旋中心可能会提供新的量子比特应用。我们研究了作为容纳光学可及量子比特的潜在材料的 Ce-implanted MgO 和 MgAl2O4 的光学特性。我们发现，Ce 植入 MgAl2O4 的光致发光比 Ce 植入 MgO 的光致发光亮 10 倍以上，并观察到 MgAl2O4 中的 Ce 中心在 4 K 下 500 mT 的偏振依赖性发射率为 2%，这表明已经实现了初始化和读取自旋量子比特状态所需的特性。
{"title":"Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl2O4","authors":"Manato Kawahara, Yuichiro Abe, Koki Takano, F. Joseph Heremans, Jun Ishihara, Sean E. Sullivan, Christian Vorwerk, Vrindaa Somjit, Christopher P. Anderson, Gary Wolfowicz, Makoto Kohda, Shunsuke Fukami, Giulia Galli, David D. Awschalom, Hideo Ohno and Shun Kanai","doi":"10.35848/1882-0786/ad59f4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f4","url":null,"abstract":"Since the qubit’s performance of solid-state spin centers depends highly on the host material, spin centers using new host materials may offer new qubit applications. We investigate the optical properties of Ce-implanted MgO and MgAl2O4 as potential materials holding the optically accessible qubit. We find that the photoluminescence of Ce-implanted MgAl2O4 is more than 10 times brighter than that of Ce-implanted MgO and observe polarization-dependent emission of Ce center in MgAl2O4 with 2% at 4 K under 500 mT, suggesting that the properties required for initializing and reading the state of the spin qubit have been achieved.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.35848/1882-0786/ad652a
Runze Wang, M. Noguchi, Shiro Hino, Koji Kita
This study investigated the effect of boron-incorporation (B-incorp) on SiO2 properties near the SiO2/4H-SiC interface by Fourier transforms infrared spectroscopy with attenuated total reflection mode. We focused on the range of Si-O-Si asymmetric stretching vibrations whereas B-incorp samples exhibited different peak shift trend compared to thermal oxidized samples. The observed peak shift, corroborated by the calculated spectral simulation, suggests a reduction in oxygen deficiency near the interface for B-incorp samples. This suggests a potential link between B-incorp and the passivation of traps near the interface, possibly through its influence on SiO2 stoichiometry.
{"title":"Investigating the mechanism of SiO2/4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO2","authors":"Runze Wang, M. Noguchi, Shiro Hino, Koji Kita","doi":"10.35848/1882-0786/ad652a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad652a","url":null,"abstract":"\u0000 This study investigated the effect of boron-incorporation (B-incorp) on SiO2 properties near the SiO2/4H-SiC interface by Fourier transforms infrared spectroscopy with attenuated total reflection mode. We focused on the range of Si-O-Si asymmetric stretching vibrations whereas B-incorp samples exhibited different peak shift trend compared to thermal oxidized samples. The observed peak shift, corroborated by the calculated spectral simulation, suggests a reduction in oxygen deficiency near the interface for B-incorp samples. This suggests a potential link between B-incorp and the passivation of traps near the interface, possibly through its influence on SiO2 stoichiometry.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141824539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.35848/1882-0786/ad5c27
Safumi Suzuki and Masahiro Asada
During the last two decades, rapid advancements in RT oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for HF operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews, the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.
{"title":"Fundamentals and recent advances of terahertz resonant tunneling diodes","authors":"Safumi Suzuki and Masahiro Asada","doi":"10.35848/1882-0786/ad5c27","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c27","url":null,"abstract":"During the last two decades, rapid advancements in RT oscillators that use resonant tunneling diodes (RTDs) have been reported, with operations approaching the limits of electronic device oscillators. Although RTD devices are known for HF operation, milliwatt-level high-output powers have been recently obtained using a single device. Moreover, interesting operations using feedback and injection locking phenomena are also emerging. This paper outlines the basic oscillation principles, oscillation characteristics, and applications of RTD devices. Unlike previous reviews, the basic parts include harmonic signal generation, the construction of resonators and antennas, and bias circuits, which have been newly summarized. A graphical method for determining oscillation is introduced, and the oscillator characteristics are summarized in terms of new indicators, such as power density. This paper also includes the modulation characteristics of the intrinsic part of the device, spectral changes owing to feedback, and the characteristics of the RTD device as a receiver.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.35848/1882-0786/ad5bbe
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi
We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.
我们发现，在肖特基势垒二极管中通过卤化物气相外延沉积的 (001) β-Ga2O3 外延层上的微凹槽是反向漏电流流[-64 V 时为 -10.0 μA]点的杀手级缺陷。微槽倾向于沿[010]方向排列，每个微槽由(100)、(001)和( 02)低指数微面组成。微槽的[00]侧存在多晶缺陷。微槽底部的电场在 50 V 时达到 5.27 × 105 V cm-1，大约是平面电场的两倍。
{"title":"Microgrooves with low-index facets in halide vapor deposited (001) β-Ga2O3: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography","authors":"Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki and Jun Hirabayashi","doi":"10.35848/1882-0786/ad5bbe","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbe","url":null,"abstract":"We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and ( 02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [ 00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at 50 V, which is approximately twice that of the flat surface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141741514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad5e5a
Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.
{"title":"Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor","authors":"Dinusha Herath Mudiyanselage, Dawei Wang, Bingcheng Da, Ziyi He and Houqiang Fu","doi":"10.35848/1882-0786/ad5e5a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5e5a","url":null,"abstract":"This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor (η) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage (BV) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad59f5
Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao
In this study, we propose a strategy to construct high-performance ultra-thin optical power converters (OPCs) based on Gires–Tournois resonator configurations operating in high-order modes. Despite reducing the absorber thickness by 5.8 to 8.1 times, the proposed ultra-thin OPCs exhibit the same (comparable) energy absorption characteristic and demonstrate superior electrical performance compared to a thick OPC. It is revealed that such high absorption effects originated from the excitation of optical asymmetric Fabry–Perot-type high-order inference resonance modes and the electrical performance enhancement can be attributed to the reduction of the absorber thickness.
{"title":"Ultra-thin optical power converters based on Gires–Tournois resonator configuration operating in high-order modes","authors":"Zongkun Zhang, Dongjie Zhou, Chong Tan, Qianli Qiu, Huiyong Deng, Ning Dai and Jiaming Hao","doi":"10.35848/1882-0786/ad59f5","DOIUrl":"https://doi.org/10.35848/1882-0786/ad59f5","url":null,"abstract":"In this study, we propose a strategy to construct high-performance ultra-thin optical power converters (OPCs) based on Gires–Tournois resonator configurations operating in high-order modes. Despite reducing the absorber thickness by 5.8 to 8.1 times, the proposed ultra-thin OPCs exhibit the same (comparable) energy absorption characteristic and demonstrate superior electrical performance compared to a thick OPC. It is revealed that such high absorption effects originated from the excitation of optical asymmetric Fabry–Perot-type high-order inference resonance modes and the electrical performance enhancement can be attributed to the reduction of the absorber thickness.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.35848/1882-0786/ad5c26
Makoto Tachibana, Cédric Bourgès and Takao Mori
BaZrO3 and KTaO3 are two rare examples of perovskite oxides that retain the ideal cubic structure down to the lowest temperature. In this paper, we report thermal conductivity (κ) between 300 and 773 K on single crystals of these compounds. For BaZrO3, the κ of 7.5 Wm−1K−1 at 300 K is ∼40% larger than the previously reported polycrystalline values. For KTaO3, our value of 13.1 Wm−1K−1 at 300 K clarifies the sources of error in some of the previously reported data. These results underscore the importance of high-quality experimental data in benchmarking the accuracy of advanced first-principles κ calculations.
BaZrO3 和 KTaO3 是包晶氧化物中两个罕见的例子，它们能在最低温度下保持理想的立方结构。本文报告了这些化合物单晶体在 300 至 773 K 之间的热导率（κ）。对于 BaZrO3，300 K 时的 κ 为 7.5 Wm-1K-1，比之前报告的多晶值大 40%。对于 KTaO3，我们在 300 K 时得出的 13.1 Wm-1K-1 值澄清了之前报告的一些数据的误差来源。这些结果凸显了高质量实验数据在衡量先进的第一原理κ计算精度方面的重要性。
{"title":"Thermal conductivity of BaZrO3 and KTaO3 single crystals","authors":"Makoto Tachibana, Cédric Bourgès and Takao Mori","doi":"10.35848/1882-0786/ad5c26","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5c26","url":null,"abstract":"BaZrO3 and KTaO3 are two rare examples of perovskite oxides that retain the ideal cubic structure down to the lowest temperature. In this paper, we report thermal conductivity (κ) between 300 and 773 K on single crystals of these compounds. For BaZrO3, the κ of 7.5 Wm−1K−1 at 300 K is ∼40% larger than the previously reported polycrystalline values. For KTaO3, our value of 13.1 Wm−1K−1 at 300 K clarifies the sources of error in some of the previously reported data. These results underscore the importance of high-quality experimental data in benchmarking the accuracy of advanced first-principles κ calculations.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141608698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.35848/1882-0786/ad5bbd
Shin-ichiro Sato, Takao Oto
We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the 4F3/2–4I9/2 and 4F3/2–4I11/2 transitions (916 and 1107 nm) in Nd3+. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.
{"title":"Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor","authors":"Shin-ichiro Sato, Takao Oto","doi":"10.35848/1882-0786/ad5bbd","DOIUrl":"https://doi.org/10.35848/1882-0786/ad5bbd","url":null,"abstract":"We demonstrate the optical coupling of implanted neodymium (Nd) ions in a photonic crystal (PhC)-L3 cavity on GaN at RT. The structure of the PhC-L3 cavity is designed by the electromagnetic field simulation to enhance the <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>9/2</sub> and <sup>4</sup>\u0000<italic toggle=\"yes\">F</italic>\u0000<sub>3/2</sub>–<sup>4</sup>\u0000<italic toggle=\"yes\">I</italic>\u0000<sub>11/2</sub> transitions (916 and 1107 nm) in Nd<sup>3+</sup>. The highest enhancement ratio of 20-fold is achieved under our measurement conditions by the enhancement of spontaneous emission rate due to the Purcell effect in addition to the improvement of light collection efficiency. These results pave the way for the development of Ln-doped GaN based quantum light–matter interface and nanophotonics.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141571859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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