Pub Date : 2024-05-13DOI: 10.35848/1882-0786/ad45ad
Yohei Sugiyama, Yuga Kondo, Tomoyuki Horikiri, Daisuke Akamatsu and Feng-Lei Hong
We propose a scheme to phase lock a quantum-memory control laser, frequency-conversion pump laser, and two-photon source over three octaves in frequency to operate a quantum memory. The absolute frequencies of the laser sources are determined based on a Doppler-free iodine hyperfine transition. The achieved relative frequency instability and uncertainty were ≤1 × 10–12 and 3 × 10–11, respectively, which are below the requirement for operating a Pr:YSO quantum memory. This scheme simplifies the instrumentation of laser sources in a quantum repeater, and increases the reliability of quantum communication systems.
{"title":"Phase locking and absolute frequency stabilization of laser sources for a Pr:YSO quantum memory","authors":"Yohei Sugiyama, Yuga Kondo, Tomoyuki Horikiri, Daisuke Akamatsu and Feng-Lei Hong","doi":"10.35848/1882-0786/ad45ad","DOIUrl":"https://doi.org/10.35848/1882-0786/ad45ad","url":null,"abstract":"We propose a scheme to phase lock a quantum-memory control laser, frequency-conversion pump laser, and two-photon source over three octaves in frequency to operate a quantum memory. The absolute frequencies of the laser sources are determined based on a Doppler-free iodine hyperfine transition. The achieved relative frequency instability and uncertainty were ≤1 × 10–12 and 3 × 10–11, respectively, which are below the requirement for operating a Pr:YSO quantum memory. This scheme simplifies the instrumentation of laser sources in a quantum repeater, and increases the reliability of quantum communication systems.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"2 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141061115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report on an approach to produce single photon emitters at the SiO2/SiC interface. We form a high-quality SiO2/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO2/SiC interface.
{"title":"Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures","authors":"Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi","doi":"10.35848/1882-0786/ad4449","DOIUrl":"https://doi.org/10.35848/1882-0786/ad4449","url":null,"abstract":"We report on an approach to produce single photon emitters at the SiO<sub>2</sub>/SiC interface. We form a high-quality SiO<sub>2</sub>/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO<sub>2</sub>/SiC interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"30 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140927531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1−xSnx)2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1−xSnx)2 on Si. Atomic force microscopy reveals that the Ca(Ge1−xSnx)2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1−xSnx)2 island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.
二维（2D）材料作为一种前景广阔的热电材料备受关注。本研究确立了包括锗基二维层在内的第四族二维材料--Ca(Ge1-xSnx)2 晶体的形成方法。固相外延使我们能够在硅上形成外延 Ca(Ge1-xSnx)2。原子力显微镜显示 Ca(Ge1-xSnx)2 具有岛状结构。X 射线衍射证明了 Ca(Ge1-xSnx)2 岛状结构的外延生长以及随着 Sn 含量的增加而增加的 c 轴晶格常数。这种包括 IV 族二维层的新型金属间化合物的形成为高性能热电发生器/硅开辟了一条途径。
{"title":"Epitaxial growth of Ca(Ge1−xSnx)2 with group IV 2D layers on Si substrate","authors":"Takashi Yoshizaki, Tsukasa Terada, Yuto Uematsu, Takafumi Ishibe and Yoshiaki Nakamura","doi":"10.35848/1882-0786/ad3ee2","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3ee2","url":null,"abstract":"Two-dimensional (2D) material is drawing considerable attention as a promising thermoelectric material. This study establishes the formation method of renewed Ca-intercalated group IV 2D materials, Ca(Ge1−xSnx)2 crystals including germanene-based 2D layers. The solid phase epitaxy allows us to form epitaxial Ca(Ge1−xSnx)2 on Si. Atomic force microscopy reveals that the Ca(Ge1−xSnx)2 has island structures. X-ray diffraction proved the epitaxial growth of the Ca(Ge1−xSnx)2 island structures and the increase of the c-axis lattice constant with Sn content increase. The formation of this renewed intermetallic compound including group IV 2D layer opens an avenue for high performance thermoelectric generator/Si.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"11 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140889310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-17DOI: 10.35848/1882-0786/ad3a2e
Junia Nomura, Kenichi Hirosawa and Nobuo Ohata
We demonstrate a master oscillator power amplifier system that emits single-frequency, high-energy optical pulses at 1539 nm using an Er, Yb:glass planar waveguide amplifier with a normalized frequency of the waveguide of 4.4. A maximum pulse energy of 9.7 mJ is observed at a repetition frequency of 500 Hz. The signal to noise ratio is 25 dB and is independent of the repetition frequency from 100 to 500 Hz. The beam quality factor M2 of the output is 1.03 thanks to the small normalized frequency of the planar waveguide.
{"title":"Single-frequency high-energy pulses from an Er:Yb glass planar waveguide amplifier with good beam quality","authors":"Junia Nomura, Kenichi Hirosawa and Nobuo Ohata","doi":"10.35848/1882-0786/ad3a2e","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3a2e","url":null,"abstract":"We demonstrate a master oscillator power amplifier system that emits single-frequency, high-energy optical pulses at 1539 nm using an Er, Yb:glass planar waveguide amplifier with a normalized frequency of the waveguide of 4.4. A maximum pulse energy of 9.7 mJ is observed at a repetition frequency of 500 Hz. The signal to noise ratio is 25 dB and is independent of the repetition frequency from 100 to 500 Hz. The beam quality factor M2 of the output is 1.03 thanks to the small normalized frequency of the planar waveguide.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"2012 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140613013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this research, a 1064 nm single-longitudinal-mode (SLM) vortex beam was generated from an annular-pumped Nd:YVO4 microchip laser, in which a circular Dammann grating was used to reshape the 808 nm pump light into an annular intensity profile. As a result, the laser emitted a SLM LG01 beam with a maximum output power of 192 mW. A straightforward technique for producing SLM vortex beams is made available by this work.
{"title":"Single-longitudinal-mode vortex Nd:YVO4 laser using a circular Dammann grating for pump shaping","authors":"Jiaxin Song, Junjie Yu, Weilin Cao, Yuefei Li, Dawei Zhang, Jianlang Li","doi":"10.35848/1882-0786/ad379b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad379b","url":null,"abstract":"In this research, a 1064 nm single-longitudinal-mode (SLM) vortex beam was generated from an annular-pumped Nd:YVO<sub>4</sub> microchip laser, in which a circular Dammann grating was used to reshape the 808 nm pump light into an annular intensity profile. As a result, the laser emitted a SLM LG<sub>01</sub> beam with a maximum output power of 192 mW. A straightforward technique for producing SLM vortex beams is made available by this work.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"28 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140612881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1550 nm wavelength photonic-crystal surface-emitting lasers (PCSELs) are attractive for optical communication and eye-safe sensing applications. In this study, we present InP-based PCSELs featuring a double-lattice photonic-crystal structure designed for high-power single-mode operation at a wavelength of 1550 nm. These PCSELs demonstrate output powers exceeding 300 mW under continuous-wave conditions at 25 °C. Additionally, highly stable single-mode oscillation with a side-mode suppression ratio of over 60 dB is verified at temperatures from 15 °C to 60 °C. Measurement and simulation of photonic band structures reveal the impacts of the threshold gain margin and optical coupling coefficient on the single-mode stability.
波长为 1550 nm 的光子晶体表面发射激光器（PCSEL）在光通信和眼部安全传感应用中极具吸引力。在本研究中，我们介绍了基于 InP 的 PCSEL，其特点是采用双晶格光子晶体结构，专为 1550 nm 波长的高功率单模运行而设计。这些 PCSEL 在 25 °C 连续波条件下的输出功率超过 300 mW。此外，在 15 °C 至 60 °C 的温度条件下，验证了高度稳定的单模振荡，侧模抑制比超过 60 dB。光子带结构的测量和模拟揭示了阈值增益裕量和光耦合系数对单模稳定性的影响。
{"title":"High-power, stable single-mode CW operation of 1550 nm wavelength InP-based photonic-crystal surface-emitting lasers","authors":"Takeshi Aoki, Yuhki Itoh, Kosuke Fujii, Hiroyuki Yoshinaga, Naoki Fujiwara, Makoto Ogasawara, Yusuke Sawada, Rei Tanaka, Hideki Yagi, Masaki Yanagisawa, Masahiro Yoshida, Takuya Inoue, Menaka De Zoysa, Kenji Ishizaki and Susumu Noda","doi":"10.35848/1882-0786/ad3cb4","DOIUrl":"https://doi.org/10.35848/1882-0786/ad3cb4","url":null,"abstract":"1550 nm wavelength photonic-crystal surface-emitting lasers (PCSELs) are attractive for optical communication and eye-safe sensing applications. In this study, we present InP-based PCSELs featuring a double-lattice photonic-crystal structure designed for high-power single-mode operation at a wavelength of 1550 nm. These PCSELs demonstrate output powers exceeding 300 mW under continuous-wave conditions at 25 °C. Additionally, highly stable single-mode oscillation with a side-mode suppression ratio of over 60 dB is verified at temperatures from 15 °C to 60 °C. Measurement and simulation of photonic band structures reveal the impacts of the threshold gain margin and optical coupling coefficient on the single-mode stability.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"53 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140612882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-04DOI: 10.35848/1882-0786/ad346b
Anna Suzuki, Yicheng Wang, Sergei Tomilov, Zhongben Pan and Clara J. Saraceno
We report on a passively mode-locked Tm,Ho:CLNGG laser operating at 2090 nm, pumped by a multimode fiber-coupled 793 nm laser diode, representing the first demonstration of a diode-pumped sub-100-fs mode-locked laser at 2.1 μm wavelength. Due to the disordered nature of the gain material that exhibits a broad and smooth gain profile, pulses as short as 88 fs were achieved with an average output power of 120 mW at a repetition rate of 70.3 MHz. Stable self-starting mode-locked operation was obtained using a semiconductor saturable absorber mirror based on the GaSb material system.
{"title":"Diode-pumped 88 fs SESAM mode-locked Tm,Ho:CLNGG laser at 2090 nm","authors":"Anna Suzuki, Yicheng Wang, Sergei Tomilov, Zhongben Pan and Clara J. Saraceno","doi":"10.35848/1882-0786/ad346b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad346b","url":null,"abstract":"We report on a passively mode-locked Tm,Ho:CLNGG laser operating at 2090 nm, pumped by a multimode fiber-coupled 793 nm laser diode, representing the first demonstration of a diode-pumped sub-100-fs mode-locked laser at 2.1 μm wavelength. Due to the disordered nature of the gain material that exhibits a broad and smooth gain profile, pulses as short as 88 fs were achieved with an average output power of 120 mW at a repetition rate of 70.3 MHz. Stable self-starting mode-locked operation was obtained using a semiconductor saturable absorber mirror based on the GaSb material system.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"94 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140587332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-02DOI: 10.35848/1882-0786/ad2784
Sota Tsubokura, Shoya Kawano, Yumiko Imai, Tadashi Ueda, Kei-ichi Nakamoto, Haruo Noma, Hirohisa Hioki and Taketoshi Minato
The functionalities of materials are governed by the atom type and arrangement, and perturbations caused by defects and adsorbate interactions often significantly alter the behavior of materials. Scanning probe microscopy (SPM) can capture complex interactions caused by the structures on surfaces. It is, however, difficult to analyze such interactions appearing there. In this paper, an image-processing technique that employs template matching to recognize local structures in SPM images and calculate positional correlations is reported. This approach opens new avenues for investigating intricate perturbations in the sciences and provides detailed insights into materials science.
{"title":"Development of a method for analyzing the positional correlation of local structures in scanning probe microscopy images using template-matching image-processing method","authors":"Sota Tsubokura, Shoya Kawano, Yumiko Imai, Tadashi Ueda, Kei-ichi Nakamoto, Haruo Noma, Hirohisa Hioki and Taketoshi Minato","doi":"10.35848/1882-0786/ad2784","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2784","url":null,"abstract":"The functionalities of materials are governed by the atom type and arrangement, and perturbations caused by defects and adsorbate interactions often significantly alter the behavior of materials. Scanning probe microscopy (SPM) can capture complex interactions caused by the structures on surfaces. It is, however, difficult to analyze such interactions appearing there. In this paper, an image-processing technique that employs template matching to recognize local structures in SPM images and calculate positional correlations is reported. This approach opens new avenues for investigating intricate perturbations in the sciences and provides detailed insights into materials science.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"50 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140587331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-01DOI: 10.35848/1882-0786/ad346a
Natsuka Oshimoto, Takanori Fujita, Keita Sakuma and Naoto Sekiya
We developed a cryocooler system to reveal the temperature dependence of the quality (Q) factor of high-temperature superconducting (HTS) bulk coil and the power transfer efficiency (PTE) and power handling capability (PHC) of a wireless power transfer (WPT) system using the HTS bulk coil. The measured Q factors of the HTS bulk coil were 9051 at 77 K and 14 050 at 25 K. The measured PTEs and PHCs of the WPT system were 44.2% and 4.48 W at 77 K, and 50.8% and 25.2 W at 25 K.
我们开发了一种低温冷却器系统，以揭示高温超导（HTS）线圈质量（Q）因子的温度依赖性，以及使用 HTS 线圈的无线功率传输（WPT）系统的功率传输效率（PTE）和功率处理能力（PHC）。在 77 K 时，HTS 大体积线圈的测量 Q 值为 9051，在 25 K 时为 14 050；在 77 K 时，WPT 系统的测量 PTE 和 PHC 分别为 44.2% 和 4.48 W，在 25 K 时分别为 50.8% 和 25.2 W。
{"title":"Temperature dependence of power transfer efficiency and power handling capability of wireless power transfer system using superconducting bulk coil","authors":"Natsuka Oshimoto, Takanori Fujita, Keita Sakuma and Naoto Sekiya","doi":"10.35848/1882-0786/ad346a","DOIUrl":"https://doi.org/10.35848/1882-0786/ad346a","url":null,"abstract":"We developed a cryocooler system to reveal the temperature dependence of the quality (Q) factor of high-temperature superconducting (HTS) bulk coil and the power transfer efficiency (PTE) and power handling capability (PHC) of a wireless power transfer (WPT) system using the HTS bulk coil. The measured Q factors of the HTS bulk coil were 9051 at 77 K and 14 050 at 25 K. The measured PTEs and PHCs of the WPT system were 44.2% and 4.48 W at 77 K, and 50.8% and 25.2 W at 25 K.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"29 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140587536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Artificial lattices with semiconductor spacers are expected to exhibit changes in their magnetic structure owing to the control of their electronic states. The temperature (T) and magnetic-field (Hext) dependence of the in-plane magnetic structure of an [Fe3Si/FeSi2]20 superlattice with a nonmagnetic and semiconducting FeSi2 spacer layer is investigated using magnetization and polarized neutron reflectivity measurements. When Hext = 5 mT, nearly collinear antiferromagnetic (AF) structures are observed from 4 to 298 K. When Hext = 1 T, field-induced fan-like, noncollinear AF structures showing ferromagnetic components along Hext and transverse AF components are observed at low T.
由于电子状态的控制，带有半导体间隔物的人工晶格预计会表现出磁性结构的变化。我们使用磁化和偏振中子反射率测量方法研究了带有非磁性和半导体 FeSi2 间隔层的 [Fe3Si/FeSi2]20 超晶格的面内磁结构的温度（T）和磁场（Hext）依赖性。当 Hext = 5 mT 时，在 4 至 298 K 范围内观察到近乎共线的反铁磁（AF）结构。当 Hext = 1 T 时，在低 T 时观察到场诱导的扇形非共线 AF 结构，显示出沿 Hext 的铁磁成分和横向 AF 成分。
{"title":"Temperature- and magnetic field-induced magnetic structural changes in the Fe3Si/FeSi2 superlattice","authors":"Takayasu Hanashima, Jun-ichi Suzuki, Kazuhisa Kakurai, Noboru Miyata, Ken-ichiro Sakai, Hiroyuki Deguchi, Yoshiaki Hara, Satoshi Takeichi and Tsuyoshi Yoshitake","doi":"10.35848/1882-0786/ad325f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad325f","url":null,"abstract":"Artificial lattices with semiconductor spacers are expected to exhibit changes in their magnetic structure owing to the control of their electronic states. The temperature (T) and magnetic-field (Hext) dependence of the in-plane magnetic structure of an [Fe3Si/FeSi2]20 superlattice with a nonmagnetic and semiconducting FeSi2 spacer layer is investigated using magnetization and polarized neutron reflectivity measurements. When Hext = 5 mT, nearly collinear antiferromagnetic (AF) structures are observed from 4 to 298 K. When Hext = 1 T, field-induced fan-like, noncollinear AF structures showing ferromagnetic components along Hext and transverse AF components are observed at low T.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"47 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140196660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：