To realize high-capacity Ge anodes for next-generation Li+-ion batteries, a multilayer anode with a C(top)/Ge(middle)/C(bottom) structure was developed, where nanostructured amorphous Ge (a-Ge) and amorphous-like carbon films with a grain size of 10–20 nm were deposited sequentially by high-pressure Ar sputtering at 500 mTorr. Compared with the a-Ge anode, the C(top)/a-Ge(middle)/C(bottom) multistacking layer anode showed improved capacity degradation for repeated lithiation/delithiation reactions and achieved a high capacity of 910 mAh g−1 with no capacity fading after 90 cycles at a C-rate of 0.1.
为了实现下一代锂离子电池的高容量 Ge 阳极，我们开发了一种具有 C（顶部）/Ge（中部）/C（底部）结构的多层阳极，通过在 500 mTorr 条件下进行高压氩气溅射，依次沉积了晶粒尺寸为 10-20 nm 的纳米结构非晶态 Ge（a-Ge）和非晶态类碳薄膜。与 a-Ge 阳极相比，C（上）/a-Ge（中）/C（下）多堆叠层阳极在重复锂化/退锂反应中的容量衰减情况有所改善，在 C 率为 0.1 的条件下，经过 90 个循环后，容量达到 910 mAh g-1，且无容量衰减。
{"title":"Development of nanostructured Ge/C anodes with a multistacking layer fabricated via Ar high-pressure sputtering for high-capacity Li+-ion batteries","authors":"Tomoki Omae, Teruya Yamada, Daiki Fujikake, Takahiro Kozawa and Giichiro Uchida","doi":"10.35848/1882-0786/ad2785","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2785","url":null,"abstract":"To realize high-capacity Ge anodes for next-generation Li+-ion batteries, a multilayer anode with a C(top)/Ge(middle)/C(bottom) structure was developed, where nanostructured amorphous Ge (a-Ge) and amorphous-like carbon films with a grain size of 10–20 nm were deposited sequentially by high-pressure Ar sputtering at 500 mTorr. Compared with the a-Ge anode, the C(top)/a-Ge(middle)/C(bottom) multistacking layer anode showed improved capacity degradation for repeated lithiation/delithiation reactions and achieved a high capacity of 910 mAh g−1 with no capacity fading after 90 cycles at a C-rate of 0.1.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"76 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139951189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate temperatures of <450 °C, consistent with the mechanism of non-equilibrium epitaxial growth. Monolayer Ga that forms on GaN(000 ) is laterally disordered and has no temperature dependence, along with droplets of excess Ga. The vertical and lateral B-factors for each Ga layer were confirmed using first-principles molecular dynamics calculations.
在 MBE 条件下，利用原位 X 射线散射探测了 GaN（0001）和（000 ）表面镓（Ga）叠层的三维有序性。在氮化镓（0001）上形成了有序的双层镓，但在衬底温度<450 ℃时有序性降低，这与非平衡外延生长的机制一致。在氮化镓（000 ）上形成的单层镓是横向无序的，并且与温度无关，同时还有过量的镓滴。第一原理分子动力学计算证实了每个镓层的垂直和横向 B 因子。
{"title":"Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN","authors":"Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Takahiro Kawamura, Toru Akiyama and Masamitu Takahasi","doi":"10.35848/1882-0786/ad237b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad237b","url":null,"abstract":"The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate temperatures of <450 °C, consistent with the mechanism of non-equilibrium epitaxial growth. Monolayer Ga that forms on GaN(000 ) is laterally disordered and has no temperature dependence, along with droplets of excess Ga. The vertical and lateral B-factors for each Ga layer were confirmed using first-principles molecular dynamics calculations.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"66 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139923491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-15DOI: 10.35848/1882-0786/ad253f
Shunsuke Ota, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera and Shintaro Takada
Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers to generate SAWs while reducing the electromagnetic wave. The results show that electromagnetic waves are suppressed by more than 90 % in all directions. This suppression overcomes the operating limits and improves the scalability of SAW systems. Our results promise to facilitate the development of SAW-based applications in a wide range of research fields.
{"title":"Suppression of electromagnetic crosstalk by differential excitation for SAW generation","authors":"Shunsuke Ota, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera and Shintaro Takada","doi":"10.35848/1882-0786/ad253f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad253f","url":null,"abstract":"Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers to generate SAWs while reducing the electromagnetic wave. The results show that electromagnetic waves are suppressed by more than 90 % in all directions. This suppression overcomes the operating limits and improves the scalability of SAW systems. Our results promise to facilitate the development of SAW-based applications in a wide range of research fields.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-14DOI: 10.35848/1882-0786/ad2112
Prasad Koviri, Hajime Komori, Haochen Tian, Masahiro Ishizeki, Takashi Kato, Akifumi Asahara, Ryosuke Shimizu, Thomas R. Schibli and Kaoru Minoshima
We demonstrated an ultrafast time-resolved measurement method operating at the single-photon level and employing a two-color comb-based asynchronous optical sampling (ASOPS) setup. We harnessed the two-color ASOPS photon counting approach to achieve long-term averaging of the ultralow intensity signal with a synchronized optical trigger signal, which minimizes residual timing jitter between the two combs. A pulse-width limited picosecond cross-correlation signal was successfully obtained with a power level of <1 photon/pulse. This approach enables the thorough study of ultrafast time-resolved detection of entangled photon pairs, quantum mechanical correlations in the time-frequency domain and finds wide use in optical quantum technology.
{"title":"Single-photon level ultrafast time-resolved measurement using two-color dual-comb-based asynchronous linear optical sampling","authors":"Prasad Koviri, Hajime Komori, Haochen Tian, Masahiro Ishizeki, Takashi Kato, Akifumi Asahara, Ryosuke Shimizu, Thomas R. Schibli and Kaoru Minoshima","doi":"10.35848/1882-0786/ad2112","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2112","url":null,"abstract":"We demonstrated an ultrafast time-resolved measurement method operating at the single-photon level and employing a two-color comb-based asynchronous optical sampling (ASOPS) setup. We harnessed the two-color ASOPS photon counting approach to achieve long-term averaging of the ultralow intensity signal with a synchronized optical trigger signal, which minimizes residual timing jitter between the two combs. A pulse-width limited picosecond cross-correlation signal was successfully obtained with a power level of <1 photon/pulse. This approach enables the thorough study of ultrafast time-resolved detection of entangled photon pairs, quantum mechanical correlations in the time-frequency domain and finds wide use in optical quantum technology.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139757372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wearable energy harvesters (WEHs) have garnered significant attention recently due to their promising capabilities in powering wearable devices. In this research, we present a core–shell yarn-structured triboelectric nanogenerator (CY-TENG) that operates in two modes: the single-electrode TENG (SE-TENG) and the droplet-based electricity generator. This design facilitates energy harvesting from both waterdrops and biomechanics. The CY-TENG is fabricated using fluorinated ethylene propylene ultrafine heat-shrink tubes combined with stainless-steel yarns, ensuring its flexibility, durability, and weavability. Such attributes underscore its potential as a dual-function WEH.
{"title":"Core–shell yarn-structured triboelectric nanogenerator for harvesting both waterdrop and biomechanics energies","authors":"Haitao Wang, Yasuyoshi Kurokawa, Jia-Han Zhang, Kazuhiro Gotoh, Xin Liu, Satoru Miyamoto and Noritaka Usami","doi":"10.35848/1882-0786/ad1f06","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1f06","url":null,"abstract":"Wearable energy harvesters (WEHs) have garnered significant attention recently due to their promising capabilities in powering wearable devices. In this research, we present a core–shell yarn-structured triboelectric nanogenerator (CY-TENG) that operates in two modes: the single-electrode TENG (SE-TENG) and the droplet-based electricity generator. This design facilitates energy harvesting from both waterdrops and biomechanics. The CY-TENG is fabricated using fluorinated ethylene propylene ultrafine heat-shrink tubes combined with stainless-steel yarns, ensuring its flexibility, durability, and weavability. Such attributes underscore its potential as a dual-function WEH.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"5 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139580092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-24DOI: 10.35848/1882-0786/ad1db6
Xin Li, Ning Hou and Wen Xiong
The electronic structures of Ge nanowires under the [110] direction stress are calculated via effective-mass k·p theory, and the results manifest eight equivalent L-valleys will be split into fourfold degenerate L1-valleys and L2-valleys. With increasing stress, the electron levels at the L1-valleys and L2-valleys can be pushed close to and away from those at the Γ-valley, respectively, which causes the appearance of a rising inflection point in the Γ-valley filling ratio and gain peak intensity at around 2.5 GPa stress. Moreover, we prove the positive net peak gain with small diameters is apt to be obtained considering the free-carrier absorption loss.
{"title":"The optical gain variation of Ge nanowires induced by L-valley splitting under the [110] direction stress","authors":"Xin Li, Ning Hou and Wen Xiong","doi":"10.35848/1882-0786/ad1db6","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1db6","url":null,"abstract":"The electronic structures of Ge nanowires under the [110] direction stress are calculated via effective-mass k·p theory, and the results manifest eight equivalent L-valleys will be split into fourfold degenerate L1-valleys and L2-valleys. With increasing stress, the electron levels at the L1-valleys and L2-valleys can be pushed close to and away from those at the Γ-valley, respectively, which causes the appearance of a rising inflection point in the Γ-valley filling ratio and gain peak intensity at around 2.5 GPa stress. Moreover, we prove the positive net peak gain with small diameters is apt to be obtained considering the free-carrier absorption loss.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"385 2 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139557830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-19DOI: 10.35848/1882-0786/ad1bc3
Mitsuharu Uemoto, Nahoto Funaki, Kazuma Yokota, Takuji Hosoi and Tomoya Ono
The effect of NO annealing on the electronic structures of the 4H-SiC(0001)/SiO2 interface with atomic-scale steps is investigated. The characteristic behavior of conduction band edge (CBE) states is strongly affected by the atomic configurations in the SiO2 and the step structure, resulting in the discontinuity of the CBE states at the step edges, which prevents electrons from penetrating from the source to drain and decreases the mobile free-electron density. We found that the behavior of the CBE states becomes independent from the atomic configuration of the SiO2 and the density of the discontinuities is reduced after NO annealing.
{"title":"Density functional theory study on the effect of NO annealing for SiC(0001) surface with atomic-scale steps","authors":"Mitsuharu Uemoto, Nahoto Funaki, Kazuma Yokota, Takuji Hosoi and Tomoya Ono","doi":"10.35848/1882-0786/ad1bc3","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1bc3","url":null,"abstract":"The effect of NO annealing on the electronic structures of the 4H-SiC(0001)/SiO2 interface with atomic-scale steps is investigated. The characteristic behavior of conduction band edge (CBE) states is strongly affected by the atomic configurations in the SiO2 and the step structure, resulting in the discontinuity of the CBE states at the step edges, which prevents electrons from penetrating from the source to drain and decreases the mobile free-electron density. We found that the behavior of the CBE states becomes independent from the atomic configuration of the SiO2 and the density of the discontinuities is reduced after NO annealing.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"107 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139499287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-08DOI: 10.35848/1882-0786/ad1920
Jiaye Xu, Shiqing Wu, Chao Tao and Xiaojun Liu
Multi-modality imaging is significant for biomedical applications. We propose a dual-sensitive sensor to simultaneously detect optical and ultrasonic signals. Based upon the classical piezoelectric structure, we attach a photosensitive layer made of carbon nanotubes-polydimethylsiloxane (CNTs-PDMS) composite to the surface. The photosensitive layer absorbs light and converts it into ultrasound, while allowing acoustic energy to transmit through concurrently. After optimizing the ratio of PDMS to CNTs, we increase the sensor’s light detection sensitivity and maintain the ultrasound detection sensitivity. Finally, the successful implementation in mouse ear optical attenuation–photoacoustic imaging demonstrates the dual-sensitive sensor’s potential application in multi-modality imaging.
{"title":"Optical and ultrasonic dual-sensitive sensor and its application in photoacoustic microscopy","authors":"Jiaye Xu, Shiqing Wu, Chao Tao and Xiaojun Liu","doi":"10.35848/1882-0786/ad1920","DOIUrl":"https://doi.org/10.35848/1882-0786/ad1920","url":null,"abstract":"Multi-modality imaging is significant for biomedical applications. We propose a dual-sensitive sensor to simultaneously detect optical and ultrasonic signals. Based upon the classical piezoelectric structure, we attach a photosensitive layer made of carbon nanotubes-polydimethylsiloxane (CNTs-PDMS) composite to the surface. The photosensitive layer absorbs light and converts it into ultrasound, while allowing acoustic energy to transmit through concurrently. After optimizing the ratio of PDMS to CNTs, we increase the sensor’s light detection sensitivity and maintain the ultrasound detection sensitivity. Finally, the successful implementation in mouse ear optical attenuation–photoacoustic imaging demonstrates the dual-sensitive sensor’s potential application in multi-modality imaging.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"51 3 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139409840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-03DOI: 10.35848/1882-0786/ad126f
Natsuo Taguchi, Akinori Iwai, Masahiro Noguchi, Hiroaki Takahashi, Atsuo Michiue, Menaka De Zoysa, Takuya Inoue, Kenji Ishizaki and Susumu Noda
Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have attracted attention for various applications, such as materials processing, high-brightness illuminations, and displays. In this letter, we demonstrate GaN-based PCSELs at green wavelengths. We formed a photonic crystal (PC) in p-GaN and filled holes of the PC with SiO2 to ensure device stability. Through a current injection test under pulsed conditions and spectral analysis, we confirmed that the fabricated device possessed Γ-point single-mode oscillation at wavelengths above 505 nm. Our results have the potential to further expand the applications of PCSELs and semiconductor lasers in visible region.
{"title":"Green-wavelength GaN-based photonic-crystal surface-emitting lasers","authors":"Natsuo Taguchi, Akinori Iwai, Masahiro Noguchi, Hiroaki Takahashi, Atsuo Michiue, Menaka De Zoysa, Takuya Inoue, Kenji Ishizaki and Susumu Noda","doi":"10.35848/1882-0786/ad126f","DOIUrl":"https://doi.org/10.35848/1882-0786/ad126f","url":null,"abstract":"Visible-wavelength GaN-based photonic-crystal surface-emitting lasers (PCSELs) have attracted attention for various applications, such as materials processing, high-brightness illuminations, and displays. In this letter, we demonstrate GaN-based PCSELs at green wavelengths. We formed a photonic crystal (PC) in p-GaN and filled holes of the PC with SiO2 to ensure device stability. Through a current injection test under pulsed conditions and spectral analysis, we confirmed that the fabricated device possessed Γ-point single-mode oscillation at wavelengths above 505 nm. Our results have the potential to further expand the applications of PCSELs and semiconductor lasers in visible region.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"157 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139084163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-01-03DOI: 10.35848/1882-0786/ad16ad
Meguru Endo, Masahiro Horita and Jun Suda
Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing Shockley–Read–Hall (SRH) recombination currents in homoepitaxial GaN p–n junctions. These defects were intentionally generated by electron beam (EB) irradiation at 137 keV. The net doping concentrations in p+–n junction diodes were not changed following irradiation although the levels in p–n+ junction diodes decreased as the EB fluence was increased. The SRH recombination current also increased with increases in the fluence. This work additionally evaluated the relationship between recombination lifetimes and trap concentrations obtained by deep level transient spectroscopy.
通过分析同外延氮化镓 p-n 结中的肖克利-雷德-霍尔（SRH）重组电流，研究了 n 型和 p 型氮化镓中由 N 原子位移产生的点缺陷所形成的重组中心。这些缺陷是在 137 keV 的电子束（EB）辐照下有意产生的。辐照后，p+-n 结二极管中的净掺杂浓度没有变化，但随着 EB 通量的增加，p-n+ 结二极管中的掺杂浓度有所下降。SRH 重组电流也随着通量的增加而增加。这项工作还评估了重组寿命与通过深层瞬态光谱获得的陷阱浓度之间的关系。
{"title":"Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers","authors":"Meguru Endo, Masahiro Horita and Jun Suda","doi":"10.35848/1882-0786/ad16ad","DOIUrl":"https://doi.org/10.35848/1882-0786/ad16ad","url":null,"abstract":"Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing Shockley–Read–Hall (SRH) recombination currents in homoepitaxial GaN p–n junctions. These defects were intentionally generated by electron beam (EB) irradiation at 137 keV. The net doping concentrations in p+–n junction diodes were not changed following irradiation although the levels in p–n+ junction diodes decreased as the EB fluence was increased. The SRH recombination current also increased with increases in the fluence. This work additionally evaluated the relationship between recombination lifetimes and trap concentrations obtained by deep level transient spectroscopy.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"15 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139084157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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