Pub Date : 2024-03-15DOI: 10.35848/1882-0786/ad2ecc
Nadia Sultana, Yanlin Gao, Mina Maruyama and Susumu Okada
Density functional theory was used to investigate the geometric structure of bilayer graphene under an external electric field with carrier doping. Our calculations revealed the crucial impact of external electric fields and the hole injection on determining the geometric structure of bilayer graphene. The bond length of graphene monotonically increased when increasing the hole doping concentration, while it remained insensitive to electron doping. Additionally, there accumulated carriers predominantly distributed in the outermost layer located just below the gate electrode. These results enabled the construction of moiré superlattices in the bilayer graphene, possessing different moiré periodicity depending on the carrier concentration.
{"title":"Structural modulation of bilayer graphene under an external electric field and carrier doping","authors":"Nadia Sultana, Yanlin Gao, Mina Maruyama and Susumu Okada","doi":"10.35848/1882-0786/ad2ecc","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2ecc","url":null,"abstract":"Density functional theory was used to investigate the geometric structure of bilayer graphene under an external electric field with carrier doping. Our calculations revealed the crucial impact of external electric fields and the hole injection on determining the geometric structure of bilayer graphene. The bond length of graphene monotonically increased when increasing the hole doping concentration, while it remained insensitive to electron doping. Additionally, there accumulated carriers predominantly distributed in the outermost layer located just below the gate electrode. These results enabled the construction of moiré superlattices in the bilayer graphene, possessing different moiré periodicity depending on the carrier concentration.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"5082 5 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-15DOI: 10.35848/1882-0786/ad2d74
Tianhui Li, Weikai Luo, Jinxiang Wu, Xinjun Li, Hui Yang, Xiaotian Zhao and Hongyu An
The spin–orbit torques within a Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of an external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on a vicinal substrate with minimal sacrifice to the perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in a Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.
{"title":"Field-free magnetization switching with full scale in Pt/Tm3Fe5O12 bilayer on vicinal substrate","authors":"Tianhui Li, Weikai Luo, Jinxiang Wu, Xinjun Li, Hui Yang, Xiaotian Zhao and Hongyu An","doi":"10.35848/1882-0786/ad2d74","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d74","url":null,"abstract":"The spin–orbit torques within a Pt/Tm3Fe5O12 (TmIG) bilayer offer an expedient method for manipulating the magnetization of TmIG. However, the practical application of TmIG is hindered by the presence of an external field during switching. Here, we demonstrate field-free magnetization switching in Pt/TmIG bilayer on a vicinal substrate with minimal sacrifice to the perpendicular magnetic anisotropy (PMA) of TmIG. With the assistance of tilt PMA, reversible perpendicular magnetization switching is realized in the absence of an external field. Our results offer an alternative solution for achieving field-free perpendicular magnetization switching in a Pt/TmIG bilayer, thereby fostering the advancement of emerging SOT-based devices.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"69 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It is essential to estimate the surface polar anchoring energy in order to discuss the interfacial orientation of ferroelectric nematic liquid crystals. In this study, we accurately estimated the twist angle of a -twist cell with an antiparallel rubbing manner, by means of renormalized transmission spectroscopic ellipsometry, which has a great deal of experience in measuring the twist angle of ordinary nematic liquid crystals. We also succeeded in estimating the reduced polar anchoring energy from the essential equation derived from the simplified torque balance equation. It is assumed that the reduced surface polar anchoring energy is on the order of 102.
{"title":"Evaluation of polar alignment structure and surface anchoring energy in ferroelectric nematic liquid crystals by renormalized transmission spectroscopic ellipsometry","authors":"Sakunosuke Abe, Amon Nakagawa, Yosei Shibata, Munehiro Kimura and Tadashi Akahane","doi":"10.35848/1882-0786/ad2cff","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2cff","url":null,"abstract":"It is essential to estimate the surface polar anchoring energy in order to discuss the interfacial orientation of ferroelectric nematic liquid crystals. In this study, we accurately estimated the twist angle of a -twist cell with an antiparallel rubbing manner, by means of renormalized transmission spectroscopic ellipsometry, which has a great deal of experience in measuring the twist angle of ordinary nematic liquid crystals. We also succeeded in estimating the reduced polar anchoring energy from the essential equation derived from the simplified torque balance equation. It is assumed that the reduced surface polar anchoring energy is on the order of 102.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-12DOI: 10.35848/1882-0786/ad2c00
Chao Wang, Yunpeng Hao, Boqi Wu, Fan Yang, Chunlei Zhao, Yaodan Chi and Xiaotian Yang
We propose two kinds of high-efficiency free-space wave splitters in the mid-IR band using reverse design. The wavelength divider based on the abnormal reflection principle realizes a beam-splitting angle of 22.00° and 10.92° by controlling the phase distribution, and the reflection efficiency of both wavelengths exceeds 50%. The wavelength divider designed based on the concept of metalens simultaneously accomplishes the functions of focusing and beam splitting. It has a focal length of 100 μm and a relative focal position of 100 μm. Most importantly, the focusing efficiency for the two wavelengths reaches an impressive 48.59% and 72.51%, respectively.
{"title":"A simple reflective metalens based on reverse design for an ultra-high-efficiency free space wavelength splitter","authors":"Chao Wang, Yunpeng Hao, Boqi Wu, Fan Yang, Chunlei Zhao, Yaodan Chi and Xiaotian Yang","doi":"10.35848/1882-0786/ad2c00","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2c00","url":null,"abstract":"We propose two kinds of high-efficiency free-space wave splitters in the mid-IR band using reverse design. The wavelength divider based on the abnormal reflection principle realizes a beam-splitting angle of 22.00° and 10.92° by controlling the phase distribution, and the reflection efficiency of both wavelengths exceeds 50%. The wavelength divider designed based on the concept of metalens simultaneously accomplishes the functions of focusing and beam splitting. It has a focal length of 100 μm and a relative focal position of 100 μm. Most importantly, the focusing efficiency for the two wavelengths reaches an impressive 48.59% and 72.51%, respectively.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"18 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140106398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-11DOI: 10.35848/1882-0786/ad2aff
Wolfgang Voegeli, Haruki Takayama, Xiaoyu Liang, Tetsuroh Shirasawa, Etsuo Arakawa, Hiroyuki Kudo and Wataru Yashiro
The design and evaluation experiments of a multibeam X-ray tomography optical system that can be used with synchrotron radiation from sources with a narrow energy bandwidth, i.e. undulator sources, are reported. It consists of silicon single crystals that diffract the incident X-rays to 27 beams, which are used to image a sample. The energy of the beams was aligned with an accuracy sufficient for use at typical undulator beamlines. Projection images of a test sample were collected and successfully reconstructed, showing the feasibility of a high-speed X-ray tomography instrument based on the optical system.
报告介绍了一种多光束 X 射线断层摄影光学系统的设计和评估实验，该系统可用于能量带宽较窄的同步辐射源（即衰减器辐射源）。该系统由硅单晶组成，可将入射的 X 射线衍射成 27 束光束，用于对样品成像。这些光束的能量被精确对准，足以在典型的衰减器光束线中使用。测试样品的投影图像已被采集并成功重建，这表明基于该光学系统的高速 X 射线断层成像仪是可行的。
{"title":"Multibeam X-ray tomography optical system for narrow-energy-bandwidth synchrotron radiation","authors":"Wolfgang Voegeli, Haruki Takayama, Xiaoyu Liang, Tetsuroh Shirasawa, Etsuo Arakawa, Hiroyuki Kudo and Wataru Yashiro","doi":"10.35848/1882-0786/ad2aff","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2aff","url":null,"abstract":"The design and evaluation experiments of a multibeam X-ray tomography optical system that can be used with synchrotron radiation from sources with a narrow energy bandwidth, i.e. undulator sources, are reported. It consists of silicon single crystals that diffract the incident X-rays to 27 beams, which are used to image a sample. The energy of the beams was aligned with an accuracy sufficient for use at typical undulator beamlines. Projection images of a test sample were collected and successfully reconstructed, showing the feasibility of a high-speed X-ray tomography instrument based on the optical system.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"7 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140099405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
β-Ga2O3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperatures, optimizing the epitaxial surface by reducing the surface roughness and dislocation density. Combined with mesa termination, the results showed that the breakdown voltage (Vbr) significantly increased from 845 V to 1532 V. The device with a 3 × 3 mm2 anode size was fabricated simultaneously, and the high forward currents of 8.7 A@2 V and Vbr > 700 V were achieved. This work shows a possible solution for the commercialization of β-Ga2O3 SBDs.
{"title":"8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination","authors":"Feihong Wu, Zhao Han, Jinyang Liu, Yuangang Wang, Weibing Hao, Xuanze Zhou, Guangwei Xu, Yuanjie Lv, Zhihong Feng and Shibing Long","doi":"10.35848/1882-0786/ad2d73","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d73","url":null,"abstract":"β-Ga2O3 Schottky barrier diodes (SBDs) with low-defect epitaxial surface and effective termination are essential for realizing excellent blocking characteristics. This work systematically studied oxygen annealing at various temperatures, optimizing the epitaxial surface by reducing the surface roughness and dislocation density. Combined with mesa termination, the results showed that the breakdown voltage (Vbr) significantly increased from 845 V to 1532 V. The device with a 3 × 3 mm2 anode size was fabricated simultaneously, and the high forward currents of 8.7 A@2 V and Vbr > 700 V were achieved. This work shows a possible solution for the commercialization of β-Ga2O3 SBDs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"35 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140099641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-08DOI: 10.35848/1882-0786/ad2d75
Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito and Toshifumi Irisawa
We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.
我们研究了在硅衬底上形成的层状 Sb2Te3 薄膜的电结特性。Sb2Te3/n-Si 异质结的电流-电压特性显示出欧姆特性，而 Sb2Te3/p-Si 异质结则显示出整流特性，具有 0.77 eV 的高势垒高度。带有 Sb2Te3 电极的 MOS 电容器的电容-电压特性表明，Sb2Te3 薄膜的有效功函数为 4.44 eV。从 Sb2Te3/n-Si 电流-电压特性的温度依赖性推断，这些发现表明 Sb2Te3/Si 异质结构具有较低的导带偏移。
{"title":"Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions","authors":"Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito and Toshifumi Irisawa","doi":"10.35848/1882-0786/ad2d75","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2d75","url":null,"abstract":"We investigated the electrical junction properties of the layered Sb2Te3 film formed on Si substrates. The current−voltage characteristics of the Sb2Te3/n-Si heterojunction showed an ohmic properties, whereas the Sb2Te3/p-Si heterojunction exhibited rectifying properties with a high barrier height of 0.77 eV. The capacitance−voltage characteristics of MOS capacitors with the Sb2Te3 electrode indicated an effective work function of 4.44 eV for the Sb2Te3 film. These findings suggest that the Sb2Te3/Si heterostructure possesses a low conduction band offset, as inferred from the temperature dependence of the current−voltage characteristics of the Sb2Te3/n-Si.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"32 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140073315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2b01
Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi
We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.
{"title":"Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry","authors":"Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi","doi":"10.35848/1882-0786/ad2b01","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2b01","url":null,"abstract":"We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"13 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2907
Satoshi Iba and Yuzo Ohno
Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.
{"title":"Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature","authors":"Satoshi Iba and Yuzo Ohno","doi":"10.35848/1882-0786/ad2907","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2907","url":null,"abstract":"Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"99 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2b00
Shining Zhu, Xin Li, Zhengjie Luo, Xuguang Jia, Yue Qin, Hao Guo, Jun Tang, Zhonghao Li, Huanfei Wen, Zongmin Ma and Jun Liu
Thermal crosstalk between array structures is a key factor in limiting the sensitivity of micro-nano array sensors. We propose a two-stage thermally isolated structure with thermal holes and heat dissipation layer and pulsed voltage heating to reduce thermal crosstalk. Through finite element thermal simulation analysis as well as thermal interference test, the results show that the thermal crosstalk of the two-stage structure is reduced by 12.89% and 39.67%, respectively, in the steady state compared to the structure with no thermal isolation, and pulsed voltage heating leads to the thermal crosstalk of the two-stage structure to be <10%.
{"title":"A two-stage insulation method for suppressing thermal crosstalk in microarray sensitive units","authors":"Shining Zhu, Xin Li, Zhengjie Luo, Xuguang Jia, Yue Qin, Hao Guo, Jun Tang, Zhonghao Li, Huanfei Wen, Zongmin Ma and Jun Liu","doi":"10.35848/1882-0786/ad2b00","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2b00","url":null,"abstract":"Thermal crosstalk between array structures is a key factor in limiting the sensitivity of micro-nano array sensors. We propose a two-stage thermally isolated structure with thermal holes and heat dissipation layer and pulsed voltage heating to reduce thermal crosstalk. Through finite element thermal simulation analysis as well as thermal interference test, the results show that the thermal crosstalk of the two-stage structure is reduced by 12.89% and 39.67%, respectively, in the steady state compared to the structure with no thermal isolation, and pulsed voltage heating leads to the thermal crosstalk of the two-stage structure to be <10%.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"248 1","pages":""},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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