Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2b01
Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi
We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.
{"title":"Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry","authors":"Jiawen Yu, Hiroaki Hanafusa and Seiichiro Higashi","doi":"10.35848/1882-0786/ad2b01","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2b01","url":null,"abstract":"We have developed an experimental method to extract interfacial thermal resistance (ITR) at an organic/semiconductor interface based on optical-interference contactless thermometry. The proposed technique was applied to a SU-8/SiC bilayer sample, and clear oscillations in reflectivity induced by optical interference during pulse heating and cooling were observed. After fitting the observed reflectivity waveform with simulation results by a two-dimensional (2D) double-layer heat conduction model and multi-reflection calculations, ITR was extracted as 190 mm2 K W−1, which resulted in a temperature drop of 11 K at the interface. Moreover, the 2D transient temperature distribution of the sample throughout pulse heating and cooling was obtained.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2907
Satoshi Iba and Yuzo Ohno
Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.
{"title":"Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature","authors":"Satoshi Iba and Yuzo Ohno","doi":"10.35848/1882-0786/ad2907","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2907","url":null,"abstract":"Quantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers. However, the hitherto reported recombination lifetimes (40 ps) and spin relaxation times (440 ps) of (110) InGaAs/AlGaAs structures are insufficient. Here it is shown that higher growth temperatures and higher V/III beam equivalent pressure ratios than previously used in crystal growth by molecular beam epitaxy lead to recombination and spin relaxation times in the nanosecond range at RT, meeting the requirements for application in spin lasers.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-06DOI: 10.35848/1882-0786/ad2b00
Shining Zhu, Xin Li, Zhengjie Luo, Xuguang Jia, Yue Qin, Hao Guo, Jun Tang, Zhonghao Li, Huanfei Wen, Zongmin Ma and Jun Liu
Thermal crosstalk between array structures is a key factor in limiting the sensitivity of micro-nano array sensors. We propose a two-stage thermally isolated structure with thermal holes and heat dissipation layer and pulsed voltage heating to reduce thermal crosstalk. Through finite element thermal simulation analysis as well as thermal interference test, the results show that the thermal crosstalk of the two-stage structure is reduced by 12.89% and 39.67%, respectively, in the steady state compared to the structure with no thermal isolation, and pulsed voltage heating leads to the thermal crosstalk of the two-stage structure to be <10%.
{"title":"A two-stage insulation method for suppressing thermal crosstalk in microarray sensitive units","authors":"Shining Zhu, Xin Li, Zhengjie Luo, Xuguang Jia, Yue Qin, Hao Guo, Jun Tang, Zhonghao Li, Huanfei Wen, Zongmin Ma and Jun Liu","doi":"10.35848/1882-0786/ad2b00","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2b00","url":null,"abstract":"Thermal crosstalk between array structures is a key factor in limiting the sensitivity of micro-nano array sensors. We propose a two-stage thermally isolated structure with thermal holes and heat dissipation layer and pulsed voltage heating to reduce thermal crosstalk. Through finite element thermal simulation analysis as well as thermal interference test, the results show that the thermal crosstalk of the two-stage structure is reduced by 12.89% and 39.67%, respectively, in the steady state compared to the structure with no thermal isolation, and pulsed voltage heating leads to the thermal crosstalk of the two-stage structure to be <10%.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140047939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-02DOI: 10.35848/1882-0786/ad2f66
Hisaaki Tanaka, Shun-ichiro Ito, Toru Matsui, T. Takenobu
A facile method for chemical doping of conducting polymers is demonstrated with an ionic liquid containing FeCl4 - anions as the oxidizing agents. A drop of the ionic liquid on the film of a typical semicrystalline polymer immediately changed the room temperature conductivity to 500 S/cm. The highly conductive state originated from both the high doping level and the high crystallinity of the doped film, as confirmed by optical absorption and X-ray diffraction measurements, respectively. Furthermore, the doping level was continuously controlled by the gate voltage of the ionic-liquid-gated transistor structure through an electrochemical dedoping process.
使用含有 FeCl4 阴离子的离子液体作为氧化剂，展示了一种对导电聚合物进行化学掺杂的简便方法。在典型的半结晶聚合物薄膜上滴上一滴离子液体，室温下的导电率立即变为 500 S/cm。光学吸收和 X 射线衍射测量分别证实，这种高导电状态源于掺杂薄膜的高掺杂水平和高结晶度。此外，通过电化学掺杂过程，离子液体门控晶体管结构的栅极电压可持续控制掺杂水平。
{"title":"Facile and controllable chemical doping of conducting polymers with an ionic liquid dopant","authors":"Hisaaki Tanaka, Shun-ichiro Ito, Toru Matsui, T. Takenobu","doi":"10.35848/1882-0786/ad2f66","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2f66","url":null,"abstract":"\u0000 A facile method for chemical doping of conducting polymers is demonstrated with an ionic liquid containing FeCl4\u0000 - anions as the oxidizing agents. A drop of the ionic liquid on the film of a typical semicrystalline polymer immediately changed the room temperature conductivity to 500 S/cm. The highly conductive state originated from both the high doping level and the high crystallinity of the doped film, as confirmed by optical absorption and X-ray diffraction measurements, respectively. Furthermore, the doping level was continuously controlled by the gate voltage of the ionic-liquid-gated transistor structure through an electrochemical dedoping process.\u0000 \u0000","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140082224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, by Alloy electrode engineering, the Ti-Ag device performed the Forming-free property because Ag ions were promoted to migrate into the GeTeOx layer to form a thicker conductive filament. This facilitated a uniform change in conductance with the pulse number, and the alloy synapse achieved a significant improvement in linearity (350%), which demonstrated its enhancement in recognition accuracy. To further validate its potential as a comprehensive artificial synapse, the multi-essential synaptic behaviors, including spike-timing-dependent plasticity, spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, and excitatory postsynaptic current, were achieved successfully.
{"title":"Realizing reliable linearity and Forming-free in conductive bridging random access memory synapse by alloy electrode engineering","authors":"Ao Chen, Puyi Zhang, Yiwei Zheng, Xiaoxu Yuan, Guokun Ma, Yiheng Rao, Houzhao Wan, Nengfan Liu, Qin Chen, Daohong Yang, Hao Wang","doi":"10.35848/1882-0786/ad2f65","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2f65","url":null,"abstract":"\u0000 In this work, by Alloy electrode engineering, the Ti-Ag device performed the Forming-free property because Ag ions were promoted to migrate into the GeTeOx layer to form a thicker conductive filament. This facilitated a uniform change in conductance with the pulse number, and the alloy synapse achieved a significant improvement in linearity (350%), which demonstrated its enhancement in recognition accuracy. To further validate its potential as a comprehensive artificial synapse, the multi-essential synaptic behaviors, including spike-timing-dependent plasticity, spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, and excitatory postsynaptic current, were achieved successfully.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140082033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To realize high-capacity Ge anodes for next-generation Li+-ion batteries, a multilayer anode with a C(top)/Ge(middle)/C(bottom) structure was developed, where nanostructured amorphous Ge (a-Ge) and amorphous-like carbon films with a grain size of 10–20 nm were deposited sequentially by high-pressure Ar sputtering at 500 mTorr. Compared with the a-Ge anode, the C(top)/a-Ge(middle)/C(bottom) multistacking layer anode showed improved capacity degradation for repeated lithiation/delithiation reactions and achieved a high capacity of 910 mAh g−1 with no capacity fading after 90 cycles at a C-rate of 0.1.
为了实现下一代锂离子电池的高容量 Ge 阳极，我们开发了一种具有 C（顶部）/Ge（中部）/C（底部）结构的多层阳极，通过在 500 mTorr 条件下进行高压氩气溅射，依次沉积了晶粒尺寸为 10-20 nm 的纳米结构非晶态 Ge（a-Ge）和非晶态类碳薄膜。与 a-Ge 阳极相比，C（上）/a-Ge（中）/C（下）多堆叠层阳极在重复锂化/退锂反应中的容量衰减情况有所改善，在 C 率为 0.1 的条件下，经过 90 个循环后，容量达到 910 mAh g-1，且无容量衰减。
{"title":"Development of nanostructured Ge/C anodes with a multistacking layer fabricated via Ar high-pressure sputtering for high-capacity Li+-ion batteries","authors":"Tomoki Omae, Teruya Yamada, Daiki Fujikake, Takahiro Kozawa and Giichiro Uchida","doi":"10.35848/1882-0786/ad2785","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2785","url":null,"abstract":"To realize high-capacity Ge anodes for next-generation Li+-ion batteries, a multilayer anode with a C(top)/Ge(middle)/C(bottom) structure was developed, where nanostructured amorphous Ge (a-Ge) and amorphous-like carbon films with a grain size of 10–20 nm were deposited sequentially by high-pressure Ar sputtering at 500 mTorr. Compared with the a-Ge anode, the C(top)/a-Ge(middle)/C(bottom) multistacking layer anode showed improved capacity degradation for repeated lithiation/delithiation reactions and achieved a high capacity of 910 mAh g−1 with no capacity fading after 90 cycles at a C-rate of 0.1.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139951189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate temperatures of <450 °C, consistent with the mechanism of non-equilibrium epitaxial growth. Monolayer Ga that forms on GaN(000 ) is laterally disordered and has no temperature dependence, along with droplets of excess Ga. The vertical and lateral B-factors for each Ga layer were confirmed using first-principles molecular dynamics calculations.
在 MBE 条件下，利用原位 X 射线散射探测了 GaN（0001）和（000 ）表面镓（Ga）叠层的三维有序性。在氮化镓（0001）上形成了有序的双层镓，但在衬底温度<450 ℃时有序性降低，这与非平衡外延生长的机制一致。在氮化镓（000 ）上形成的单层镓是横向无序的，并且与温度无关，同时还有过量的镓滴。第一原理分子动力学计算证实了每个镓层的垂直和横向 B 因子。
{"title":"Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN","authors":"Takuo Sasaki, Takuya Iwata, Kanya Sugitani, Takahiro Kawamura, Toru Akiyama and Masamitu Takahasi","doi":"10.35848/1882-0786/ad237b","DOIUrl":"https://doi.org/10.35848/1882-0786/ad237b","url":null,"abstract":"The three-dimensional ordering of the gallium (Ga) adlayers on GaN(0001) and (000 ) surfaces was probed using in situ X-ray scattering under MBE conditions. An ordered bilayer of Ga forms on GaN(0001) but the ordering decreases at substrate temperatures of <450 °C, consistent with the mechanism of non-equilibrium epitaxial growth. Monolayer Ga that forms on GaN(000 ) is laterally disordered and has no temperature dependence, along with droplets of excess Ga. The vertical and lateral B-factors for each Ga layer were confirmed using first-principles molecular dynamics calculations.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139923491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wavefront shaping using digital micromirror devices (DMDs) allows inertia-free focus manipulation with numerous modulation modes and high refresh rates. However, the aberration caused by the curvature of DMD affects the focusing performance. Here, we propose an aberration self-calibration method based on separable natural evolution strategies (SNES). This method searches optimal Zernike coefficients of aberration globally and completes compensation using super-pixel encoding. Compared to the genetic algorithm method, we improve the speed by 62% and achieve better-focused spots. It enables simultaneous scanning of 25 independent focal spots. This advancement supports wavefront shaping applications in optical imaging, industrial inspection, and laser processing.
{"title":"Multi-focus manipulation system based on SNES aberration self-calibration","authors":"Linxian Liu, Jiahao Liu, Chunxu Ding, Jiamiao Yang, Jia Gao, Yuan Qu, Qiaozhi He, Rongjun Shao","doi":"10.35848/1882-0786/ad2afe","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2afe","url":null,"abstract":"\u0000 Wavefront shaping using digital micromirror devices (DMDs) allows inertia-free focus manipulation with numerous modulation modes and high refresh rates. However, the aberration caused by the curvature of DMD affects the focusing performance. Here, we propose an aberration self-calibration method based on separable natural evolution strategies (SNES). This method searches optimal Zernike coefficients of aberration globally and completes compensation using super-pixel encoding. Compared to the genetic algorithm method, we improve the speed by 62% and achieve better-focused spots. It enables simultaneous scanning of 25 independent focal spots. This advancement supports wavefront shaping applications in optical imaging, industrial inspection, and laser processing.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139958012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study on perovskite solar cells (PVSCs), we incorporated N-benzylhydroxylamine (N-BzHoA) as an additive into the precursor solution. The addition of N-BzHoA suppressed the formation of unwanted PbI2 and δ-phase perovskite without affecting the band gap, confirming uniform and large grains in the perovskite film. The fabricated inverted PVSCs exhibited remarkably improved properties compared to the control device, with a power conversion efficiency (PCE) of 17.49%, reduced hysteresis, and more than 89% retention of the initial capacity after 100 h of light exposure. Thus, this study highlights the effectiveness of N-BzHoA as an effective additive for inverted PVSCs.
{"title":"Improvement of film quality and solar cell properties of perovskite by the addition of N-benzylhydroxylamine","authors":"Keisuke Nagasawa, Takeshi Sano, Viet Chau Nguyen, Yutaka Okuyama, Yuya Sayama, Ryosuke Oikawa, Keigo Hoshi, Takayuki Chiba, Junji Kido","doi":"10.35848/1882-0786/ad2a05","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2a05","url":null,"abstract":"\u0000 In this study on perovskite solar cells (PVSCs), we incorporated N-benzylhydroxylamine (N-BzHoA) as an additive into the precursor solution. The addition of N-BzHoA suppressed the formation of unwanted PbI2 and δ-phase perovskite without affecting the band gap, confirming uniform and large grains in the perovskite film. The fabricated inverted PVSCs exhibited remarkably improved properties compared to the control device, with a power conversion efficiency (PCE) of 17.49%, reduced hysteresis, and more than 89% retention of the initial capacity after 100 h of light exposure. Thus, this study highlights the effectiveness of N-BzHoA as an effective additive for inverted PVSCs.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139961193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-02-16DOI: 10.35848/1882-0786/ad2a06
Kento Nishio, Kiyou Shibata, Teruyasu Mizoguchi
Large data sets are essential for building deep learning models. However, generating large datasets with higher theoretical levels and larger computational models remains difficult due to the high cost of first-principles calculation. Here, we propose a lightweight and highly accurate machine learning approach using pre-trained Graph Neural Networks (GNNs) for industrially important but difficult to scale models. The proposed method was applied to a small dataset of graphene surface systems containing surface defects, and achieved comparable accuracy with six orders of magnitude faster learning than when the GNN was trained from scratch.
{"title":"Lightweight and high-precision materials property prediction using pre-trained Graph Neural Networks and its application to small dataset","authors":"Kento Nishio, Kiyou Shibata, Teruyasu Mizoguchi","doi":"10.35848/1882-0786/ad2a06","DOIUrl":"https://doi.org/10.35848/1882-0786/ad2a06","url":null,"abstract":"\u0000 Large data sets are essential for building deep learning models. However, generating large datasets with higher theoretical levels and larger computational models remains difficult due to the high cost of first-principles calculation. Here, we propose a lightweight and highly accurate machine learning approach using pre-trained Graph Neural Networks (GNNs) for industrially important but difficult to scale models. The proposed method was applied to a small dataset of graphene surface systems containing surface defects, and achieved comparable accuracy with six orders of magnitude faster learning than when the GNN was trained from scratch.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":null,"pages":null},"PeriodicalIF":2.3,"publicationDate":"2024-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139961726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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