Xiancheng Liu, Ru Xu, Na Sun, Jiahao Yao, Tong Xu, Jinyu Lu, Tianhao Niu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Yi Shi, Rong Zhang, Youdou Zheng, Peng Chen
This Letter demonstrates a high breakdown voltage (VBK) lateral AlGaN/GaN Schottky barrier diode (SBD) on Si substrate. Using the high-permittivity material BaTiO3 in a field plate structure provides the benefit of lowering the peak surface electric field from 2.9 to 1.9 MV/cm and improving VBK from 3.22 to 3.89 kV, when the anode–cathode distance (LAC) is 30 μm. Accompanied with a specific on-resistance (Rsp,on) of 3.89 mΩ cm2, the AlGaN/GaN SBD on Si substrate achieved a power figure-of-merit as high as 3.89 GW/cm2, indicating superior potential application in medium- to high-power devices.
{"title":"3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination","authors":"Xiancheng Liu, Ru Xu, Na Sun, Jiahao Yao, Tong Xu, Jinyu Lu, Tianhao Niu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Yi Shi, Rong Zhang, Youdou Zheng, Peng Chen","doi":"10.1063/5.0309845","DOIUrl":"https://doi.org/10.1063/5.0309845","url":null,"abstract":"This Letter demonstrates a high breakdown voltage (VBK) lateral AlGaN/GaN Schottky barrier diode (SBD) on Si substrate. Using the high-permittivity material BaTiO3 in a field plate structure provides the benefit of lowering the peak surface electric field from 2.9 to 1.9 MV/cm and improving VBK from 3.22 to 3.89 kV, when the anode–cathode distance (LAC) is 30 μm. Accompanied with a specific on-resistance (Rsp,on) of 3.89 mΩ cm2, the AlGaN/GaN SBD on Si substrate achieved a power figure-of-merit as high as 3.89 GW/cm2, indicating superior potential application in medium- to high-power devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yupeng Liu, Tian-Yi Hu, Lu Lu, Yiqin Lu, Qiuyang Han, Weijie Fu, Tingzhi Duan, Hu Ge, Ming Liu, Chunrui Ma, Shao-Bo Mi
High-performance dielectric film capacitors are crucial for energy storage applications and the modern electronics industry due to their high power density and ultra-fast charge–discharge speed. Herein, we report that high dielectric constant/high polarization coupled with low loss/low leakage characteristics has been achieved by optimizing the ratio of homogeneous/heterogeneous interfaces and paraelectric/ferroelectric phase within a sandwich structure of ferroelectric 0.85BaTiO3–0.15Bi(Mg0.5Zr0.5)O3 (BT-BMZ) and paraelectric SrTiO3 (STO) multilayer prepared on (110)-oriented 0.7 wt. % Nb-doped SrTiO3 (Nb:STO) substrates. The optimized sandwich structure of ferroelectric/paraelectric/ferroelectric film reaches an energy storage density of ∼124.15 J/cm3 with an efficiency of ∼74.6% at room temperature. In addition, the film exhibits excellent thermal stability over a wide temperature range from −100 to 300 °C while maintaining a high-energy storage density (e.g., ∼73.8 J/cm3 with an efficiency of ∼77.6% at 300 °C) due to its low leakage current and hysteresis loss. Our work demonstrates the feasibility and effectiveness of optimized sandwich structures in improving energy storage performance, providing a pathway for the design of high-performance film capacitors.
{"title":"High-energy density in dielectric film capacitors via interface engineering and polarization behavior regulation","authors":"Yupeng Liu, Tian-Yi Hu, Lu Lu, Yiqin Lu, Qiuyang Han, Weijie Fu, Tingzhi Duan, Hu Ge, Ming Liu, Chunrui Ma, Shao-Bo Mi","doi":"10.1063/5.0302454","DOIUrl":"https://doi.org/10.1063/5.0302454","url":null,"abstract":"High-performance dielectric film capacitors are crucial for energy storage applications and the modern electronics industry due to their high power density and ultra-fast charge–discharge speed. Herein, we report that high dielectric constant/high polarization coupled with low loss/low leakage characteristics has been achieved by optimizing the ratio of homogeneous/heterogeneous interfaces and paraelectric/ferroelectric phase within a sandwich structure of ferroelectric 0.85BaTiO3–0.15Bi(Mg0.5Zr0.5)O3 (BT-BMZ) and paraelectric SrTiO3 (STO) multilayer prepared on (110)-oriented 0.7 wt. % Nb-doped SrTiO3 (Nb:STO) substrates. The optimized sandwich structure of ferroelectric/paraelectric/ferroelectric film reaches an energy storage density of ∼124.15 J/cm3 with an efficiency of ∼74.6% at room temperature. In addition, the film exhibits excellent thermal stability over a wide temperature range from −100 to 300 °C while maintaining a high-energy storage density (e.g., ∼73.8 J/cm3 with an efficiency of ∼77.6% at 300 °C) due to its low leakage current and hysteresis loss. Our work demonstrates the feasibility and effectiveness of optimized sandwich structures in improving energy storage performance, providing a pathway for the design of high-performance film capacitors.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"7 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ferroelectric materials can be used to fabricate ferroelectric random-access memory with significant performance advantages. Recently, doped wurtzite-type ferroelectrics have attracted widespread attention. We use first-principles calculations to investigate the structural, electronic, and ferroelectric properties of Y-doped AlN (Al1−xYxN). Our results reveal that the Y-doped AlN exhibits a large spontaneous polarization comparable to that of the Sc-doped AlN, and a relatively low ferroelectric switching barrier. Furthermore, its lower material cost and wider wurtzite phase concentration range make it more practical than Sc-doped AlN. This study further reveals that the high energy barrier hindering polarization reversal originates from the covalent Al-N bonds with high bonding strength. The calculated results indicated that the ferroelectric switching barrier decreases progressively with increasing doping concentration. This is attributed to the formation of weaker chemical bonds due to the addition of the rare-earth metal element Y, making the system more ionic and thus facilitating polarization reversal. Our work expands the ferroelectric family of the wurtzite III-nitrides and provides a physical mechanism for the reduction of energy barriers through doping, which holds significant guiding value.
{"title":"Effect of doping on the ferroelectric properties of wurtzite Al1 − xYxN","authors":"Yulin Zhao, Yulu Zhou, Yifang Ouyang, Xiaoma Tao","doi":"10.1063/5.0303096","DOIUrl":"https://doi.org/10.1063/5.0303096","url":null,"abstract":"Ferroelectric materials can be used to fabricate ferroelectric random-access memory with significant performance advantages. Recently, doped wurtzite-type ferroelectrics have attracted widespread attention. We use first-principles calculations to investigate the structural, electronic, and ferroelectric properties of Y-doped AlN (Al1−xYxN). Our results reveal that the Y-doped AlN exhibits a large spontaneous polarization comparable to that of the Sc-doped AlN, and a relatively low ferroelectric switching barrier. Furthermore, its lower material cost and wider wurtzite phase concentration range make it more practical than Sc-doped AlN. This study further reveals that the high energy barrier hindering polarization reversal originates from the covalent Al-N bonds with high bonding strength. The calculated results indicated that the ferroelectric switching barrier decreases progressively with increasing doping concentration. This is attributed to the formation of weaker chemical bonds due to the addition of the rare-earth metal element Y, making the system more ionic and thus facilitating polarization reversal. Our work expands the ferroelectric family of the wurtzite III-nitrides and provides a physical mechanism for the reduction of energy barriers through doping, which holds significant guiding value.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"43 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Resolving the coupled challenges of parasitic polyiodide shuttling and sluggish redox kinetics is critical for advancing aqueous zinc-iodine (Zn-I2) batteries. This work demonstrates a unified physical solution within a Prussian blue analogue framework, where a single, targeted atomic substitution is shown to induce a functional anisotropic lattice distortion. The strategic replacement of framework Zn2+ with Co2+ simultaneously activates potent electrocatalytic sites for iodine conversion via enhanced π-backdonation and, through the resultant distortion, sculpts the sub-nanometer cages into geometric traps that physically confine polyiodide intermediates. This integrated mechanism is evidenced by a profound kinetic acceleration, halving both the charge-transfer resistance (to 8.98 Ω) and the intrinsic pseudocapacitive time constant (to 30.6 s). Consequently, the engineered cathode achieves a high capacity of 256 mAh g−1 at 1 A g−1 and exceptional durability. Crucially, a sustained Coulombic efficiency near 100% over 1000 cycles provides definitive proof of the shuttle effect's suppression. This study establishes how targeted lattice engineering can resolve coupled, multifunctional challenges in a monolithic material, offering a design principle for advanced energy storage systems.
解决寄生多碘化物穿梭和缓慢氧化还原动力学的耦合挑战对于推进水相锌碘（Zn-I2）电池至关重要。这项工作展示了普鲁士蓝模拟框架内的统一物理解决方案，其中单个靶向原子取代被证明可以诱导功能各向异性晶格畸变。用Co2+战略性地取代框架Zn2+，同时通过增强π-反给予激活碘转化的有效电催化位点，并通过由此产生的畸变，将亚纳米笼雕刻成几何陷阱，物理上限制多碘化物中间体。这种集成的机制被一个深刻的动能加速度证明，电荷转移电阻减半（到8.98 Ω）和本征假电容时间常数（到30.6 s）。因此，该工程阴极在1ag - 1时达到256 mAh g - 1的高容量，并且具有优异的耐用性。至关重要的是，在1000次循环中，库仑效率持续接近100%，这为穿梭效应的抑制提供了明确的证据。本研究确定了目标点阵工程如何解决单片材料中耦合的多功能挑战，为先进的储能系统提供了设计原则。
{"title":"Unified catalysis and confinement in a Prussian blue analogue via anisotropic lattice distortion","authors":"Yawen Wu, Situo Cheng, Yuhu Wang, Jiecai Fu","doi":"10.1063/5.0308000","DOIUrl":"https://doi.org/10.1063/5.0308000","url":null,"abstract":"Resolving the coupled challenges of parasitic polyiodide shuttling and sluggish redox kinetics is critical for advancing aqueous zinc-iodine (Zn-I2) batteries. This work demonstrates a unified physical solution within a Prussian blue analogue framework, where a single, targeted atomic substitution is shown to induce a functional anisotropic lattice distortion. The strategic replacement of framework Zn2+ with Co2+ simultaneously activates potent electrocatalytic sites for iodine conversion via enhanced π-backdonation and, through the resultant distortion, sculpts the sub-nanometer cages into geometric traps that physically confine polyiodide intermediates. This integrated mechanism is evidenced by a profound kinetic acceleration, halving both the charge-transfer resistance (to 8.98 Ω) and the intrinsic pseudocapacitive time constant (to 30.6 s). Consequently, the engineered cathode achieves a high capacity of 256 mAh g−1 at 1 A g−1 and exceptional durability. Crucially, a sustained Coulombic efficiency near 100% over 1000 cycles provides definitive proof of the shuttle effect's suppression. This study establishes how targeted lattice engineering can resolve coupled, multifunctional challenges in a monolithic material, offering a design principle for advanced energy storage systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"44 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Barbara Szafranski, Lukas Peters, Stefan Wolter, Christoph Margenfeld, Andreas Waag, Tobias Voss
Oxygen is a ubiquitous impurity in AlN that influences its optical and electronic properties. A precise determination of its electronic levels is essential for device-specific material-engineering. In this study, we report on the experimental determination of the ionization energy of the substitutional oxygen donor ON in sputter-deposited and subsequently high-temperature annealed AlN templates using temperature-dependent and time-resolved cathodoluminescence spectroscopy. The slow component of the oxygen-related defect luminescence, associated with donor–acceptor pair recombination and with decay times of hundreds of nanoseconds, exhibits distinct thermal quenching at temperatures above 250 K. By fitting this temperature dependence with a model based on the thermal emission of electrons from the donor level, we extract an ionization energy ED = 371 ± 77 meV for the oxygen donor in AlN. This experimental value is in excellent agreement with theoretical predictions for the shallow substitutional ON donor and clearly distinct from calculated energies for the deeper oxygen DX center. This work provides an important experimental insight into this fundamental parameter in AlN.
{"title":"Ionization energy of the oxygen donor in AlN","authors":"Barbara Szafranski, Lukas Peters, Stefan Wolter, Christoph Margenfeld, Andreas Waag, Tobias Voss","doi":"10.1063/5.0308036","DOIUrl":"https://doi.org/10.1063/5.0308036","url":null,"abstract":"Oxygen is a ubiquitous impurity in AlN that influences its optical and electronic properties. A precise determination of its electronic levels is essential for device-specific material-engineering. In this study, we report on the experimental determination of the ionization energy of the substitutional oxygen donor ON in sputter-deposited and subsequently high-temperature annealed AlN templates using temperature-dependent and time-resolved cathodoluminescence spectroscopy. The slow component of the oxygen-related defect luminescence, associated with donor–acceptor pair recombination and with decay times of hundreds of nanoseconds, exhibits distinct thermal quenching at temperatures above 250 K. By fitting this temperature dependence with a model based on the thermal emission of electrons from the donor level, we extract an ionization energy ED = 371 ± 77 meV for the oxygen donor in AlN. This experimental value is in excellent agreement with theoretical predictions for the shallow substitutional ON donor and clearly distinct from calculated energies for the deeper oxygen DX center. This work provides an important experimental insight into this fundamental parameter in AlN.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"117 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron transport properties in these heterostructures have been enhanced through careful design and optimization of epitaxial growth conditions. In this work, we report for the first time Shubnikov-de Haas (SdH) oscillations of 2DEGs in AlYN/GaN and AlScN/GaN heterostructures, grown by metalorganic chemical vapor deposition. SdH oscillations provide direct access to key 2DEG parameters at the Fermi level: (1) carrier density, (2) electron effective mass (m*≈0.24 me for AlYN/GaN and m*≈0.25 me for AlScN/GaN), and (3) quantum scattering time (τq≈68 fs for AlYN/GaN and τq≈70 fs for AlScN/GaN). These measurements of fundamental transport properties provide critical insights for advancing emerging nitride semiconductors for future high-frequency and power electronics.
{"title":"Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures","authors":"Yu-Hsin Chen, Thai-Son Nguyen, Isabel Streicher, Jimy Encomendero, Stefano Leone, Huili Grace Xing, Debdeep Jena","doi":"10.1063/5.0302121","DOIUrl":"https://doi.org/10.1063/5.0302121","url":null,"abstract":"AlYN and AlScN have recently emerged as promising nitride materials that can be integrated with GaN to form two-dimensional electron gases (2DEGs) at heterojunctions. Electron transport properties in these heterostructures have been enhanced through careful design and optimization of epitaxial growth conditions. In this work, we report for the first time Shubnikov-de Haas (SdH) oscillations of 2DEGs in AlYN/GaN and AlScN/GaN heterostructures, grown by metalorganic chemical vapor deposition. SdH oscillations provide direct access to key 2DEG parameters at the Fermi level: (1) carrier density, (2) electron effective mass (m*≈0.24 me for AlYN/GaN and m*≈0.25 me for AlScN/GaN), and (3) quantum scattering time (τq≈68 fs for AlYN/GaN and τq≈70 fs for AlScN/GaN). These measurements of fundamental transport properties provide critical insights for advancing emerging nitride semiconductors for future high-frequency and power electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"2 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaochen Zhang, Shuqi Tang, Kang Wang, Menglin Huang, Shiyou Chen
For multi-threshold voltage device integration, threshold voltage modulation is achieved by depositing La- and Al-based oxide capping layers on high-k dielectric surfaces to induce interfacial dipoles. However, the detailed mechanism of dipole induction by these capping layers remains controversial. In this work, we have employed first-principles calculations to investigate the doping configurations of La and Al in the Si/SiO2/HfO2 stack. It is found that when La is incorporated into HfO2, LaHf− dominates with a high concentration, which reduces the effective metal gate work function and results in a negative threshold voltage shift. For Al doped in HfO2, both AlHf− and 2AlHf2+ concentrations increase at high Al content; however, the dipoles induced by the two configurations have opposite directions and compete with each other. The 2AlHf2+ eventually becomes dominant, which increases the effective metal gate work function and leads to a positive threshold voltage shift. Our results reveal the atomic mechanisms by which La and Al doping induce interfacial dipoles, with their opposite threshold voltage shifts resulting from different doping configurations. The findings provide a theoretical foundation for interface engineering optimization in multi-threshold voltage devices.
{"title":"Atomistic mechanisms of opposite threshold voltage shift induced by La and Al doping in HfO2-based gate stacks: First-principles insights","authors":"Xiaochen Zhang, Shuqi Tang, Kang Wang, Menglin Huang, Shiyou Chen","doi":"10.1063/5.0307383","DOIUrl":"https://doi.org/10.1063/5.0307383","url":null,"abstract":"For multi-threshold voltage device integration, threshold voltage modulation is achieved by depositing La- and Al-based oxide capping layers on high-k dielectric surfaces to induce interfacial dipoles. However, the detailed mechanism of dipole induction by these capping layers remains controversial. In this work, we have employed first-principles calculations to investigate the doping configurations of La and Al in the Si/SiO2/HfO2 stack. It is found that when La is incorporated into HfO2, LaHf− dominates with a high concentration, which reduces the effective metal gate work function and results in a negative threshold voltage shift. For Al doped in HfO2, both AlHf− and 2AlHf2+ concentrations increase at high Al content; however, the dipoles induced by the two configurations have opposite directions and compete with each other. The 2AlHf2+ eventually becomes dominant, which increases the effective metal gate work function and leads to a positive threshold voltage shift. Our results reveal the atomic mechanisms by which La and Al doping induce interfacial dipoles, with their opposite threshold voltage shifts resulting from different doping configurations. The findings provide a theoretical foundation for interface engineering optimization in multi-threshold voltage devices.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"31 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Owing to the unique linear Dirac-cone dispersion of graphene, graphene field-effect transistors (GFETs) exhibit advantages including high carrier mobility and ambipolar transport. Leveraging these properties, GFETs provide a promising route for broadband response from terahertz (THz) to ultraviolet wavelengths and self-powered photodetection at room temperature based on photothermoelectric (PTE) effect. However, the absence of a unified modeling framework has hindered systematic device optimization and circuit-level implementation. This work presents a general modeling methodology that couples dark state transport, PTE conversion, and intrinsic noise into an integrated framework. Three sub-models are developed for the drain-to-source current and transconductance: a uniform drift model with minimum complexity, a high carrier density model for the high carrier density regime, and a low carrier density model applicable near the charge neutrality point. A virtual optical power port is introduced to represent optical excitation within circuit simulations, enabling co-design with readout electronics. Illuminated state behavior is described by the Seebeck coefficient derived from Mott's formula combined with a hot electron temperature profile. Noise is modeled using Johnson–Nyquist and 1/f components. Experimental validation on CVD-grown GFETs under 0.288 THz illumination demonstrates strong agreement between predictions and measurements. This work establishes a systematic modeling framework for GFET PTE detectors by integrating I–V characteristics, PTE response as well as noise behavior into a unified scheme. The framework provides a reliable foundation for device performance optimization, readout circuit design, thereby accelerating the transition of GFET PTE detectors from laboratory prototypes to practical optoelectronic systems.
{"title":"A general approach to modeling graphene field-effect transistors for photothermoelectric detection","authors":"Jinduo Zhang, Meng Chen, Xiaoyu Hu, Guanchen Li, Ruifeng Liu, Yingxin Wang, Ziran Zhao","doi":"10.1063/5.0308089","DOIUrl":"https://doi.org/10.1063/5.0308089","url":null,"abstract":"Owing to the unique linear Dirac-cone dispersion of graphene, graphene field-effect transistors (GFETs) exhibit advantages including high carrier mobility and ambipolar transport. Leveraging these properties, GFETs provide a promising route for broadband response from terahertz (THz) to ultraviolet wavelengths and self-powered photodetection at room temperature based on photothermoelectric (PTE) effect. However, the absence of a unified modeling framework has hindered systematic device optimization and circuit-level implementation. This work presents a general modeling methodology that couples dark state transport, PTE conversion, and intrinsic noise into an integrated framework. Three sub-models are developed for the drain-to-source current and transconductance: a uniform drift model with minimum complexity, a high carrier density model for the high carrier density regime, and a low carrier density model applicable near the charge neutrality point. A virtual optical power port is introduced to represent optical excitation within circuit simulations, enabling co-design with readout electronics. Illuminated state behavior is described by the Seebeck coefficient derived from Mott's formula combined with a hot electron temperature profile. Noise is modeled using Johnson–Nyquist and 1/f components. Experimental validation on CVD-grown GFETs under 0.288 THz illumination demonstrates strong agreement between predictions and measurements. This work establishes a systematic modeling framework for GFET PTE detectors by integrating I–V characteristics, PTE response as well as noise behavior into a unified scheme. The framework provides a reliable foundation for device performance optimization, readout circuit design, thereby accelerating the transition of GFET PTE detectors from laboratory prototypes to practical optoelectronic systems.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"44 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Luyao Tang, Bingxin Chen, Haoran Zhao, Haotian Wu, Xiaomi Yan, Liping Zhu, Xiaohang Zhang, Zhenghua An, Yanru Song
Superconducting bolometric detectors offer unrivaled sensitivity across a broad spectral range. However, their multispectral resolving capability is fundamentally constrained by a reliance on bulky external elements such as beam splitters, filters, or spectrometers. To overcome this limitation, we report an on-chip photon-sorting superconducting infrared nanobolometer based on a dual-band metal–insulator–metal metasurface. The device utilizes a nested two-channel Nb nanowire architecture to achieve simultaneous plasmonic infrared harvesting, spectral sorting, and photoelectric conversion within a single structure. At 5.7 K, the bolometer exhibits distinct responsivity peaks at ∼1025 cm−1 (9.7×106 V/W) and ∼1377 cm−1 (3.7×107 V/W), with a photon-sorting efficiency exceeding 70%. This integrated device provides a compact and highly sensitive platform for infrared photodetection, with direct applications in weak-light thermal imaging and precision temperature sensing.
{"title":"Superconducting infrared nanobolometers with on-chip photon-sorting metasurfaces","authors":"Luyao Tang, Bingxin Chen, Haoran Zhao, Haotian Wu, Xiaomi Yan, Liping Zhu, Xiaohang Zhang, Zhenghua An, Yanru Song","doi":"10.1063/5.0298804","DOIUrl":"https://doi.org/10.1063/5.0298804","url":null,"abstract":"Superconducting bolometric detectors offer unrivaled sensitivity across a broad spectral range. However, their multispectral resolving capability is fundamentally constrained by a reliance on bulky external elements such as beam splitters, filters, or spectrometers. To overcome this limitation, we report an on-chip photon-sorting superconducting infrared nanobolometer based on a dual-band metal–insulator–metal metasurface. The device utilizes a nested two-channel Nb nanowire architecture to achieve simultaneous plasmonic infrared harvesting, spectral sorting, and photoelectric conversion within a single structure. At 5.7 K, the bolometer exhibits distinct responsivity peaks at ∼1025 cm−1 (9.7×106 V/W) and ∼1377 cm−1 (3.7×107 V/W), with a photon-sorting efficiency exceeding 70%. This integrated device provides a compact and highly sensitive platform for infrared photodetection, with direct applications in weak-light thermal imaging and precision temperature sensing.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"60 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sea surface temperature plays a crucial role in the exchange of heat, gases, and materials between the ocean and atmosphere, profoundly influencing global climate, marine ecosystems, and atmospheric circulation. However, temperature variations at the air–sea interface are rapid and highly unstable, being affected by multiple dynamic factors, posing significant challenges for real-time monitoring. In this work, a rapid-response flexible temperature sensor was developed using polyimide film as the substrate. Based on the thermal expansion mechanism and finite element analysis, the optimal sensor structure and material composition were determined. The sensor was fabricated via screen-printing technology, employing a acrylic copolymer and polydimethylsiloxane (PDMS) as the composite matrix, with carbon black and nickel serving as conductive fillers. A PDMS encapsulation layer was applied to enhance waterproofing performance. Within the temperature range of 0–35 °C, the sensor exhibited a high temperature coefficient of resistance of 4.82%/°C, an excellent temperature resolution of 0.05 °C, an ultrafast response time of 40 ms, outstanding thermal stability over more than 500 heating–cooling cycles, and strong insensitivity to external stimuli such as bending, humidity, and pressure. When integrated into a marine buoy system for testing, the sensor accurately detected temperature fluctuations, demonstrating great potential for temperature monitoring at the air–sea interface.
{"title":"Development of fast-response flexible temperature sensor for air–sea interface monitoring","authors":"Yabing Li, JieFei Li, Yujian Jin, Wenbiao Zhang, Yuxi Gao, Ke Hu, Linxu Wang, Wei Yu, Shuai Ren, Haijun Liu, Libo Gao, Qi Wen, Junyang Li","doi":"10.1063/5.0313072","DOIUrl":"https://doi.org/10.1063/5.0313072","url":null,"abstract":"Sea surface temperature plays a crucial role in the exchange of heat, gases, and materials between the ocean and atmosphere, profoundly influencing global climate, marine ecosystems, and atmospheric circulation. However, temperature variations at the air–sea interface are rapid and highly unstable, being affected by multiple dynamic factors, posing significant challenges for real-time monitoring. In this work, a rapid-response flexible temperature sensor was developed using polyimide film as the substrate. Based on the thermal expansion mechanism and finite element analysis, the optimal sensor structure and material composition were determined. The sensor was fabricated via screen-printing technology, employing a acrylic copolymer and polydimethylsiloxane (PDMS) as the composite matrix, with carbon black and nickel serving as conductive fillers. A PDMS encapsulation layer was applied to enhance waterproofing performance. Within the temperature range of 0–35 °C, the sensor exhibited a high temperature coefficient of resistance of 4.82%/°C, an excellent temperature resolution of 0.05 °C, an ultrafast response time of 40 ms, outstanding thermal stability over more than 500 heating–cooling cycles, and strong insensitivity to external stimuli such as bending, humidity, and pressure. When integrated into a marine buoy system for testing, the sensor accurately detected temperature fluctuations, demonstrating great potential for temperature monitoring at the air–sea interface.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"4 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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