Shishun Zhao, Jian Wang, Yifan Zhao, Rui Wang, Ye Quan, Yating Shi, Ge Wang, Meng Zhao, Ming Liu
Rapid and energy-efficient magnetization control is essential for advancing next-generation magnetic sensors and memory technologies. Photovoltaic gating of magnetism via light irradiation leverages advances in solar-cell engineering and electric-field-controlled magnetism, offering enhanced tunability at reduced power consumption. In this study, we report the fabrication of a cobalt nanosphere-photovoltaic material thin-film device. By systematically tuning the nanosphere diameter, concentration, and film thickness, we achieved an 11.5% reduction in magnetization under visible-light illumination (200 mW/cm2, 6.93 × 1017 photons cm−2 s−1). Notably, the relative magnetization reduction scales linearly with 1/r2, where r is the effective nanosphere radius. This behavior is attributed to a surface-electrical potential conservation mechanism, suggesting that increasing the surface-area-to-volume ratio enhances magneto-optical tunability. These insights provide a rational design strategy for light-modulated magnetic nanodevices with potential applications in reconfigurable sensors and memory elements.
{"title":"Enhanced visible-light manipulation of the ferromagnetism in 3D cobalt nanosphere by sphere size engineering","authors":"Shishun Zhao, Jian Wang, Yifan Zhao, Rui Wang, Ye Quan, Yating Shi, Ge Wang, Meng Zhao, Ming Liu","doi":"10.1063/5.0306460","DOIUrl":"https://doi.org/10.1063/5.0306460","url":null,"abstract":"Rapid and energy-efficient magnetization control is essential for advancing next-generation magnetic sensors and memory technologies. Photovoltaic gating of magnetism via light irradiation leverages advances in solar-cell engineering and electric-field-controlled magnetism, offering enhanced tunability at reduced power consumption. In this study, we report the fabrication of a cobalt nanosphere-photovoltaic material thin-film device. By systematically tuning the nanosphere diameter, concentration, and film thickness, we achieved an 11.5% reduction in magnetization under visible-light illumination (200 mW/cm2, 6.93 × 1017 photons cm−2 s−1). Notably, the relative magnetization reduction scales linearly with 1/r2, where r is the effective nanosphere radius. This behavior is attributed to a surface-electrical potential conservation mechanism, suggesting that increasing the surface-area-to-volume ratio enhances magneto-optical tunability. These insights provide a rational design strategy for light-modulated magnetic nanodevices with potential applications in reconfigurable sensors and memory elements.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"51 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Phonon-polaritons propagating in crystal volume offer the possibility of transferring information throughout matter (via phonons) at high (photon-like) velocity and tunable frequency/wavelength in the far-infrared. However, from the phonon-polariton Raman cross section, the phonon and photon advantages seem mutually exclusive. Either the phonon-polaritons are fast (photon-like) but hardly supported by the lattice (not phonon-like), or they are well supported by the lattice (testified by a high Raman efficiency) but slow (not photon-like). An optimal phonon–photon coupling is currently being searched for in hexagonal GaN by near-forward Raman scattering across parallel crystal faces with an in-plane singular c→-axis. Two accessible phonons, i.e., the ordinary A1 and E1 ones, plus two refractive indices, i.e., the ordinary and extraordinary ones, generate various phonon-polariton candidates. Notably, in perfect forward Raman scattering and in crossed polarizations of the incident (∥c→) and scattered lights, which, altogether, maximizes the transferred wavevector to the crystal at minimum scattering angle, a fast phonon-polariton, stemming from the bottleneck of the E1 dispersion on entry to the deep photon-like regime, is activated. It is well supported by the lattice since its Raman signal is strong and sharp, enhanced by multi-reflection of the laser beam between crystal faces at near-normal incidence. This fast Raman-enhanced phonon-polariton is interesting for infrared photonics in that it cumulates the advantages of a photon (speed) and of a phonon (Raman intensity). Besides, it commutates from a phonon-polariton to a phonon by deviating from normal incidence or by permuting the incident and scattered polarizations, with potential applications as a vibrational switch.
{"title":"Enhanced Raman scattering by fast GaN phonon-polaritons","authors":"Mayssoune Mina, Toni Alhaddad, Olivier Pagès","doi":"10.1063/5.0307163","DOIUrl":"https://doi.org/10.1063/5.0307163","url":null,"abstract":"Phonon-polaritons propagating in crystal volume offer the possibility of transferring information throughout matter (via phonons) at high (photon-like) velocity and tunable frequency/wavelength in the far-infrared. However, from the phonon-polariton Raman cross section, the phonon and photon advantages seem mutually exclusive. Either the phonon-polaritons are fast (photon-like) but hardly supported by the lattice (not phonon-like), or they are well supported by the lattice (testified by a high Raman efficiency) but slow (not photon-like). An optimal phonon–photon coupling is currently being searched for in hexagonal GaN by near-forward Raman scattering across parallel crystal faces with an in-plane singular c→-axis. Two accessible phonons, i.e., the ordinary A1 and E1 ones, plus two refractive indices, i.e., the ordinary and extraordinary ones, generate various phonon-polariton candidates. Notably, in perfect forward Raman scattering and in crossed polarizations of the incident (∥c→) and scattered lights, which, altogether, maximizes the transferred wavevector to the crystal at minimum scattering angle, a fast phonon-polariton, stemming from the bottleneck of the E1 dispersion on entry to the deep photon-like regime, is activated. It is well supported by the lattice since its Raman signal is strong and sharp, enhanced by multi-reflection of the laser beam between crystal faces at near-normal incidence. This fast Raman-enhanced phonon-polariton is interesting for infrared photonics in that it cumulates the advantages of a photon (speed) and of a phonon (Raman intensity). Besides, it commutates from a phonon-polariton to a phonon by deviating from normal incidence or by permuting the incident and scattered polarizations, with potential applications as a vibrational switch.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"1 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Yu. Frolov, A. Yu. Klokov, A. I. Sharkov, M. V. Pugachev, A. Yu. Kuntsevich
Understanding the properties of two-dimensional material interfaces with the substrate is necessary for device applications. Surface acoustic wave propagation through a layered material flake on a substrate could provide unique information on the transverse rigidity of the flake-to-substrate interaction. Ultrasonic waves were generated by a focused femtosecond laser pulse at the surface of a model system—fused silica with hBN flake transferred above. Using an all-optical spatially resolved pump–probe interferometric technique, the spatial dependencies of the surface vertical velocity profiles were measured. The measurements reveal the appearance of surface acoustic wave dispersion in the hBN flake region compared to the fused silica surface. Multilayer modeling allows us to access the longitudinal and shear elastic coupling constants c33* and c44* between hexagonal BN and the substrate.
{"title":"Surface acoustic wave enabled all-optical determination of the interlayer elastic constants of a van der Waals interface","authors":"N. Yu. Frolov, A. Yu. Klokov, A. I. Sharkov, M. V. Pugachev, A. Yu. Kuntsevich","doi":"10.1063/5.0311186","DOIUrl":"https://doi.org/10.1063/5.0311186","url":null,"abstract":"Understanding the properties of two-dimensional material interfaces with the substrate is necessary for device applications. Surface acoustic wave propagation through a layered material flake on a substrate could provide unique information on the transverse rigidity of the flake-to-substrate interaction. Ultrasonic waves were generated by a focused femtosecond laser pulse at the surface of a model system—fused silica with hBN flake transferred above. Using an all-optical spatially resolved pump–probe interferometric technique, the spatial dependencies of the surface vertical velocity profiles were measured. The measurements reveal the appearance of surface acoustic wave dispersion in the hBN flake region compared to the fused silica surface. Multilayer modeling allows us to access the longitudinal and shear elastic coupling constants c33* and c44* between hexagonal BN and the substrate.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"52 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147330280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jia-Xin Li, Bi Chen, Wei-Bin Zhang, Ashkar Batol, Huan Gou, Jun Pang, Nan-Sen Zhou, Xue-Jing Ma
Metalloid phosphorus-doped spinel-type high-entropy oxide (CrMnFeCoNi)3O4 is synthesized to solve the challenges of limited pseudocapacitance rectification for supercapacitor diodes. It demonstrates both pseudocapacitive energy storage and ionic rectification in a 1 M KOH electrolyte. This material achieves a high specific capacitance of 394.05 F g−1 at 0.5 A g−1 along with a reverse rectification ratio of 0.85 at 3 mV s−1. These properties are driven by phosphorus electronegativity, which enhances electron transfer, creates oxygen vacancies, and accelerates ion transport. The assembled supercapacitor diodes delivered a high energy density of 241.35 W h kg−1 at a power density of 5250 W kg−1 while maintaining a rectification ratio RRI of 6.95–8.8 at scan rates of 3–30 mV s−1 and a sustained RRII of 0.86. After 1000 cycles, the diode retained 84% rectification efficiency with minimal capacitance decay. This work advances iontronic circuits through dual-functional electrodes.
合成了类金属磷掺杂尖晶石型高熵氧化物（crmnnfeconi）3O4，解决了超级电容二极管有限赝电容整流的难题。在1 M KOH的电解液中证明了赝电容储能和离子整流。该材料在0.5 a g−1时具有394.05 F g−1的高比电容，在3 mV s−1时具有0.85的反向整流比。这些特性是由磷的电负性驱动的，磷的电负性增强了电子转移，产生了氧空位，加速了离子传递。在5250 W kg−1的功率密度下，组装的超级电容二极管提供了241.35 W h kg−1的高能量密度，同时在3-30 mV s−1的扫描速率下保持了6.95-8.8的整流比RRI和0.86的持续RRII。经过1000次循环后，二极管保持了84%的整流效率，电容衰减最小。这项工作通过双功能电极推进了离子电子电路。
{"title":"Enhanced pseudocapacitance rectification by doping metalloid phosphorus in high entropy oxide (CrMnFeCoNi)3O4","authors":"Jia-Xin Li, Bi Chen, Wei-Bin Zhang, Ashkar Batol, Huan Gou, Jun Pang, Nan-Sen Zhou, Xue-Jing Ma","doi":"10.1063/5.0290764","DOIUrl":"https://doi.org/10.1063/5.0290764","url":null,"abstract":"Metalloid phosphorus-doped spinel-type high-entropy oxide (CrMnFeCoNi)3O4 is synthesized to solve the challenges of limited pseudocapacitance rectification for supercapacitor diodes. It demonstrates both pseudocapacitive energy storage and ionic rectification in a 1 M KOH electrolyte. This material achieves a high specific capacitance of 394.05 F g−1 at 0.5 A g−1 along with a reverse rectification ratio of 0.85 at 3 mV s−1. These properties are driven by phosphorus electronegativity, which enhances electron transfer, creates oxygen vacancies, and accelerates ion transport. The assembled supercapacitor diodes delivered a high energy density of 241.35 W h kg−1 at a power density of 5250 W kg−1 while maintaining a rectification ratio RRI of 6.95–8.8 at scan rates of 3–30 mV s−1 and a sustained RRII of 0.86. After 1000 cycles, the diode retained 84% rectification efficiency with minimal capacitance decay. This work advances iontronic circuits through dual-functional electrodes.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"296 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wanshan Shen, Xin Li, Xiaojiang Wang, Zhitong Yin, Lixia Zhen, Huanfei Wen, Zongmin Ma, Jun Tang, Jun Liu
The operating temperature of a chip is a critical factor determining its operational efficiency and service life. In industrial control environments, temperature imaging of a chip plays a vital role in detecting localized heat accumulation and heat dissipation system failures. Although many advanced techniques have been proposed, achieving high spatiotemporal resolution temperature imaging on the chip still presents significant challenges. In this study, we proposed a temperature imaging method based on ensemble diamond nitrogen-vacancy (NV) centers and applied it to the temperature imaging of interdigital electrodes. This method achieved temperature imaging of the chip surface with a spatial resolution of 863 nm and a temporal resolution of up to 2.05 s, capturing the changes in thermal distribution with different applied voltages. The results indicate that NV centers can overcome the limitations of traditional temperature measurement methods in terms of spatiotemporal resolution, offering a promising measurement solution for chip temperature detection.
{"title":"Temperature imaging of chips with high spatiotemporal resolution using diamond nitrogen-vacancy centers","authors":"Wanshan Shen, Xin Li, Xiaojiang Wang, Zhitong Yin, Lixia Zhen, Huanfei Wen, Zongmin Ma, Jun Tang, Jun Liu","doi":"10.1063/5.0305268","DOIUrl":"https://doi.org/10.1063/5.0305268","url":null,"abstract":"The operating temperature of a chip is a critical factor determining its operational efficiency and service life. In industrial control environments, temperature imaging of a chip plays a vital role in detecting localized heat accumulation and heat dissipation system failures. Although many advanced techniques have been proposed, achieving high spatiotemporal resolution temperature imaging on the chip still presents significant challenges. In this study, we proposed a temperature imaging method based on ensemble diamond nitrogen-vacancy (NV) centers and applied it to the temperature imaging of interdigital electrodes. This method achieved temperature imaging of the chip surface with a spatial resolution of 863 nm and a temporal resolution of up to 2.05 s, capturing the changes in thermal distribution with different applied voltages. The results indicate that NV centers can overcome the limitations of traditional temperature measurement methods in terms of spatiotemporal resolution, offering a promising measurement solution for chip temperature detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"53 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ferrovalley (FV) materials have attracted much attention due to their unique spin-valley coupled properties. In this work, we predict FV single-layer TiClAsH, which has 77 meV of intrinsic valley polarization. The electronic correlation effect can drive the topological phase transition from the FV state to the quantum anomalous Hall state, and its critical half-valley metallic phase can achieve complete spin polarization. By breaking the mirror symmetry of bilayer TiClAsH, the layer-locked Berry curvature distribution is achieved, and furthermore, the layer-polarized anomalous Hall effect (LPAHE) is induced. Meanwhile, reversible LPAHE switching can be achieved through sliding control of ferroelectricity. Our findings offer a good material platform to manipulate the spin splitting, valley polarization, ferroelectricity, and topological states for multi-functional device applications.
{"title":"Ferroelectric control of the layer-polarized anomalous Hall effect in a 2D TiClAsH bilayer via superposition engineering","authors":"Cong Li, Jia Li, Hongli Zhang, Xiaolong Wang, Tong Wei, Limin Liu, Linyang Li, Guodong Liu","doi":"10.1063/5.0309665","DOIUrl":"https://doi.org/10.1063/5.0309665","url":null,"abstract":"Ferrovalley (FV) materials have attracted much attention due to their unique spin-valley coupled properties. In this work, we predict FV single-layer TiClAsH, which has 77 meV of intrinsic valley polarization. The electronic correlation effect can drive the topological phase transition from the FV state to the quantum anomalous Hall state, and its critical half-valley metallic phase can achieve complete spin polarization. By breaking the mirror symmetry of bilayer TiClAsH, the layer-locked Berry curvature distribution is achieved, and furthermore, the layer-polarized anomalous Hall effect (LPAHE) is induced. Meanwhile, reversible LPAHE switching can be achieved through sliding control of ferroelectricity. Our findings offer a good material platform to manipulate the spin splitting, valley polarization, ferroelectricity, and topological states for multi-functional device applications.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"12 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quantum confined blue CsPbBr3 perovskite quantum dots (PeQDs) demonstrate superior spectral stability and easy tunability by particle size relative to their mixed halide counterparts. However, their practical application is hampered by their susceptibility to moisture-induced degradation. Herein, the structural and optical evolutions of blue CsPbBr3 PeQDs induced by trace water are systematically studied and their mechanism is elucidated. Experimental results show that trace water (H2O) induces red shift of spectra from blue to green, accompanying significant increase in photoluminescent quantum yield and one order lower non-radiative recombination rate. Furthermore, the H2O-treated PeQDs' size presents obvious increase from 6.3 to 8.0 nm without obvious change in crystalline pattern. By combining experimental characterizations, first-principles calculations, and verification experiments, we demonstrate that appropriate H2O exposure is responsible for substituting oleic acid ligand on PeQDs, resulting in particle growth and spectral red shift. Our work establishes that water attacks PeQDs via acid–base chemistry at surface ligand sites—a mechanistic insight critical for enhancing moisture stability in blue CsPbBr3 PeQDs.
{"title":"Revealing trace water effect on the structural and optical evolutions of blue CsPbBr3 perovskite quantum dots","authors":"Yongfeng Liu, Mingyu Guo, Qingyu Xie, Zhangcheng Pan, Bowen Zhang, Liang Zhao, Shengnan Tian, Dongdong Yan, Haimei Zhu","doi":"10.1063/5.0324585","DOIUrl":"https://doi.org/10.1063/5.0324585","url":null,"abstract":"Quantum confined blue CsPbBr3 perovskite quantum dots (PeQDs) demonstrate superior spectral stability and easy tunability by particle size relative to their mixed halide counterparts. However, their practical application is hampered by their susceptibility to moisture-induced degradation. Herein, the structural and optical evolutions of blue CsPbBr3 PeQDs induced by trace water are systematically studied and their mechanism is elucidated. Experimental results show that trace water (H2O) induces red shift of spectra from blue to green, accompanying significant increase in photoluminescent quantum yield and one order lower non-radiative recombination rate. Furthermore, the H2O-treated PeQDs' size presents obvious increase from 6.3 to 8.0 nm without obvious change in crystalline pattern. By combining experimental characterizations, first-principles calculations, and verification experiments, we demonstrate that appropriate H2O exposure is responsible for substituting oleic acid ligand on PeQDs, resulting in particle growth and spectral red shift. Our work establishes that water attacks PeQDs via acid–base chemistry at surface ligand sites—a mechanistic insight critical for enhancing moisture stability in blue CsPbBr3 PeQDs.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"51 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147330146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jun Miao, Xin Cui, Wei Ye Deng, Yi Wang, Qi Liang Li
We experimentally demonstrated magnon transmission in a vertical geometry consisting of multiferroic Bi1.05La0.05FeO3 (BLFO) and heavy-metal Pt layers. Notably, a giant nonvolatile on–off modulation ratio of ∼120% under zero-field operation, together with high magnon drag efficiency (∼3.51 × 10−3 V A−1), was observed in a vertical Pt/BLFO/Pt device at room temperature. The magnon-mediated drag effect in the nonlocal Pt/BLFO/Pt symmetrical layers was investigated via the magnetic field, angle, and current density dependence. The intrinsic giant on–off modulation of the magnon signal, along withnonvolatile transport under zero-field operation and polarization-controlled Néel vectors of multiferroics, moves a possible step toward the practical utilization of multiferroic vertical magnon devices. This work may contribute to magnonic transport with high-speed, miniaturization and ultralow energy consumption.
我们通过实验证明了由多铁Bi1.05La0.05FeO3 （BLFO）和重金属Pt层组成的垂直几何结构中的磁导子传输。值得注意的是，在室温下，在垂直Pt/BLFO/Pt器件中观察到零场工作下高达120%的巨大非易失性开关调制比，以及高磁振子阻力效率（~ 3.51 × 10−3 V a−1）。通过磁场、角度和电流密度的依赖关系研究了非局部Pt/BLFO/Pt对称层中磁非介导的阻力效应。磁振子信号固有的巨大开关调制，以及零场操作下的非易失性输运和多铁质的偏振控制n矢量，使多铁质垂直磁振子器件的实际应用迈出了可能的一步。这项工作将有助于实现高速、小型化和超低能耗的磁输运。
{"title":"Giant room-temperature nonvolatile magnon on–off modulation ratio in a multiferroic Pt/Bi1.05La0.05FeO3/Pt sandwiched structure","authors":"Jun Miao, Xin Cui, Wei Ye Deng, Yi Wang, Qi Liang Li","doi":"10.1063/5.0314548","DOIUrl":"https://doi.org/10.1063/5.0314548","url":null,"abstract":"We experimentally demonstrated magnon transmission in a vertical geometry consisting of multiferroic Bi1.05La0.05FeO3 (BLFO) and heavy-metal Pt layers. Notably, a giant nonvolatile on–off modulation ratio of ∼120% under zero-field operation, together with high magnon drag efficiency (∼3.51 × 10−3 V A−1), was observed in a vertical Pt/BLFO/Pt device at room temperature. The magnon-mediated drag effect in the nonlocal Pt/BLFO/Pt symmetrical layers was investigated via the magnetic field, angle, and current density dependence. The intrinsic giant on–off modulation of the magnon signal, along withnonvolatile transport under zero-field operation and polarization-controlled Néel vectors of multiferroics, moves a possible step toward the practical utilization of multiferroic vertical magnon devices. This work may contribute to magnonic transport with high-speed, miniaturization and ultralow energy consumption.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"23 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The pursuit of higher power and density in wide bandgap power modules makes thermal management a critical challenge. Thermal interface materials (TIMs) play a critical role by filling microscopic air gaps and thereby enhancing heat transfer for power electronics. Combining the recent development of nano metal sintering technology and exceptional intrinsic thermal conductivity of certain carbon allotropes, micro-nano Cu sintering with carbon fiber (CF) reinforcement was promoted as potential high performance and cost-effective TIM for power modules. In this work, a Cu/CF composite paste was synthesized and sintered by the thermal-compressing process, followed by the detailed investigation and simulation on its sintered interfacial microstructure and mechanical and thermal properties. This work demonstrated a significant improvement of thermal and mechanical properties through the optimization of CF doping ratio. The addition of 5 wt. % CF increased the average shear strength of Cu sintering joints by 65.3% to 44.8 MPa, which is attributed to enhanced interface adhesion from the nano Ni particle coating on the CF surface. Thermal conductivity rose from 77.1 to 87.4 W/(m K) and 107 W/(m K) with 5 and 10 wt. % CF doped, respectively. Furthermore, adding 10 wt. % CF increased thermal diffusivity by 27.4%, which helps alleviate transient thermal loads. This work highlights the strong potential of Cu/CF composites as future TIM for high-density power modules.
{"title":"Thermal interface material of carbon fiber enhanced micro-nano Cu sintering for power module thermal management","authors":"Canyu Liu, Tianqi Liu, Changqing Liu","doi":"10.1063/5.0320544","DOIUrl":"https://doi.org/10.1063/5.0320544","url":null,"abstract":"The pursuit of higher power and density in wide bandgap power modules makes thermal management a critical challenge. Thermal interface materials (TIMs) play a critical role by filling microscopic air gaps and thereby enhancing heat transfer for power electronics. Combining the recent development of nano metal sintering technology and exceptional intrinsic thermal conductivity of certain carbon allotropes, micro-nano Cu sintering with carbon fiber (CF) reinforcement was promoted as potential high performance and cost-effective TIM for power modules. In this work, a Cu/CF composite paste was synthesized and sintered by the thermal-compressing process, followed by the detailed investigation and simulation on its sintered interfacial microstructure and mechanical and thermal properties. This work demonstrated a significant improvement of thermal and mechanical properties through the optimization of CF doping ratio. The addition of 5 wt. % CF increased the average shear strength of Cu sintering joints by 65.3% to 44.8 MPa, which is attributed to enhanced interface adhesion from the nano Ni particle coating on the CF surface. Thermal conductivity rose from 77.1 to 87.4 W/(m K) and 107 W/(m K) with 5 and 10 wt. % CF doped, respectively. Furthermore, adding 10 wt. % CF increased thermal diffusivity by 27.4%, which helps alleviate transient thermal loads. This work highlights the strong potential of Cu/CF composites as future TIM for high-density power modules.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"3 1","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bikash Das Mohapatra, Evangelos Th. Papaioannou, Georg Schmidt
We report a technique for generating narrowband, high-frequency electrical signals using spintronic terahertz emitters (STEs) integrated onto coplanar waveguides (CPWs). Conventional STE operation typically yields ultrashort, broadband pulses spanning tens of terahertz. Our method employs multiple STEs positioned at precisely defined intervals along the CPW to produce a burst like signal, where the inter-emitter spacing determines the time delay between pulses, thus the fundamental burst frequency, which theoretically can be tuned across the STE bandwidth. Meander-shaped CPW geometries are used to enable compact integration and uniform optical excitation. First test devices demonstrate electrical signals up to 30 GHz with a bandwidth of 4.7 GHz corresponding to a quality factor of 6.38.
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