Yaraslau Tamashevich, Tornike Shubitidze, Luca Dal Negro, Marco Ornigotti
In this paper, we introduce a fully non-perturbative approach for the description of the optical nonlinearity of epsilon-near-zero (ENZ) media. In particular, based on the rigorous Feynman path integral method, we develop a dressed Lagrangian field theory for light–matter interactions and discuss its application to dispersive Kerr-like media with order-of-unity light-induced refractive index variations. Specifically, considering the relevant case of Indium Tin Oxide (ITO) nonlinearities, we address the novel regime of non-perturbative refractive index variations in ENZ media and establish that it follows naturally from a scalar field theory with a Born–Infeld Lagrangian. Moreover, we developed a predictive model that includes the intrinsic saturation effects originating from the light-induced modification of the Drude terms in the linear dispersion of ITO materials. Our results extend the Huttner–Barnett–Bechler electrodynamics model to the case of non-perturbative optical Kerr-like media providing an intrinsically nonlinear, field-theoretic framework for understanding the exceptional nonlinearity of ITO materials beyond traditional perturbation theory.
在本文中，我们介绍了一种描述ε-近零（ENZ）介质光学非线性的完全非微扰方法。特别是，基于严格的费曼路径积分法，我们建立了光-物质相互作用的穿透拉格朗日场理论，并讨论了它在具有数量级光诱导折射率变化的色散类克尔介质中的应用。具体来说，考虑到氧化铟锡（ITO）非线性的相关情况，我们讨论了 ENZ 介质中非微扰折射率变化的新机制，并确定它自然地来自于具有博恩-因费尔德拉格朗日的标量场理论。此外，我们还建立了一个预测模型，该模型包含了 ITO 材料线性色散中由光线引起的德鲁德项修正所产生的内在饱和效应。我们的研究结果将 Huttner-Barnett-Bechler 电动力学模型扩展到了非微扰光学 Kerr-like 介质的情况，为理解 ITO 材料的特殊非线性提供了一个超越传统微扰理论的内在非线性场论框架。
{"title":"Field theory description of the non-perturbative optical nonlinearity of epsilon-near-zero media","authors":"Yaraslau Tamashevich, Tornike Shubitidze, Luca Dal Negro, Marco Ornigotti","doi":"10.1063/5.0171708","DOIUrl":"https://doi.org/10.1063/5.0171708","url":null,"abstract":"In this paper, we introduce a fully non-perturbative approach for the description of the optical nonlinearity of epsilon-near-zero (ENZ) media. In particular, based on the rigorous Feynman path integral method, we develop a dressed Lagrangian field theory for light–matter interactions and discuss its application to dispersive Kerr-like media with order-of-unity light-induced refractive index variations. Specifically, considering the relevant case of Indium Tin Oxide (ITO) nonlinearities, we address the novel regime of non-perturbative refractive index variations in ENZ media and establish that it follows naturally from a scalar field theory with a Born–Infeld Lagrangian. Moreover, we developed a predictive model that includes the intrinsic saturation effects originating from the light-induced modification of the Drude terms in the linear dispersion of ITO materials. Our results extend the Huttner–Barnett–Bechler electrodynamics model to the case of non-perturbative optical Kerr-like media providing an intrinsically nonlinear, field-theoretic framework for understanding the exceptional nonlinearity of ITO materials beyond traditional perturbation theory.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"254 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139413303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The surface plasmon effect can be used to confine electromagnetic fields to a small footprint measuring tens of nanometers. The resultant resonant cavities function as optimal coherent light sources with subwavelength scale configurations. The plasmonic laser sources based on nanoshell structures, in particular, have demonstrated the potential for use in the detection of subcellular mesoscopic molecular structures. However, this structure has a high plasmon dephasing rate, which can increase the threshold of the device, making it difficult to achieve electrically excited structures, thereby rendering them unsuitable as an active component for integration into optoelectronic circuits. A different approach to confining electromagnetic fields involves using a propagating surface plasmon laser structured on a planar layered semiconductor–insulator–metal. This design enables the surface plasmon to propagate along the direction of the nanowire and offers the potential to achieve electrically driven structures by injecting current into the semiconductor nanowire. Consequently, this structure is more effective in guiding energy into integrated optoelectronic circuits compared to the isotropic radiation of nanoshell structures. However, this design also necessitates a supporting substrate, resulting in the actual device volume exceeding the nanoscale and, in some cases, even larger than the size of a cell. This limitation hinders the application of integrated optoelectronic circuits at the micro/nanoscale for bio-applications. To address these challenges, we developed a substrate-free surface plasmon polariton laser. We demonstrated that allowing direct contact between the film and the air significantly reduced the laser threshold. Furthermore, the device maintained its operational capability across different surfaces.
{"title":"Advancements in nanoscale coherent emitters: The development of substrate-free surface plasmon nanolasers","authors":"Wing-Sing Cheung, I-Tsung Huang, Zong Yu Wu, Po-Yu Chang, Hsu-Cheng Hsu, Yu-Pin Lan, Yu-Hsun Chou","doi":"10.1063/5.0173097","DOIUrl":"https://doi.org/10.1063/5.0173097","url":null,"abstract":"The surface plasmon effect can be used to confine electromagnetic fields to a small footprint measuring tens of nanometers. The resultant resonant cavities function as optimal coherent light sources with subwavelength scale configurations. The plasmonic laser sources based on nanoshell structures, in particular, have demonstrated the potential for use in the detection of subcellular mesoscopic molecular structures. However, this structure has a high plasmon dephasing rate, which can increase the threshold of the device, making it difficult to achieve electrically excited structures, thereby rendering them unsuitable as an active component for integration into optoelectronic circuits. A different approach to confining electromagnetic fields involves using a propagating surface plasmon laser structured on a planar layered semiconductor–insulator–metal. This design enables the surface plasmon to propagate along the direction of the nanowire and offers the potential to achieve electrically driven structures by injecting current into the semiconductor nanowire. Consequently, this structure is more effective in guiding energy into integrated optoelectronic circuits compared to the isotropic radiation of nanoshell structures. However, this design also necessitates a supporting substrate, resulting in the actual device volume exceeding the nanoscale and, in some cases, even larger than the size of a cell. This limitation hinders the application of integrated optoelectronic circuits at the micro/nanoscale for bio-applications. To address these challenges, we developed a substrate-free surface plasmon polariton laser. We demonstrated that allowing direct contact between the film and the air significantly reduced the laser threshold. Furthermore, the device maintained its operational capability across different surfaces.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"60 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139102986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Gunther Roelkens, Jing Zhang, Laurens Bogaert, Emadreza Soltanian, Maximilien Billet, Ali Uzun, Biwei Pan, Yang Liu, Evangelia Delli, Dongbo Wang, Valeria Bonito Oliva, Lam Thi Ngoc Tran, Xin Guo, He Li, Senbiao Qin, Konstantinos Akritidis, Ye Chen, Yu Xue, Margot Niels, Dennis Maes, Max Kiewiet, Tom Reep, Tom Vanackere, Tom Vandekerckhove, Isaac Luntadila Lufungula, Jasper De Witte, Luis Reis, Stijn Poelman, Ying Tan, Hong Deng, Wim Bogaerts, Geert Morthier, Dries Van Thourhout, Bart Kuyken
We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key enabler for next-generation photonic systems-on-chip.
{"title":"Present and future of micro-transfer printing for heterogeneous photonic integrated circuits","authors":"Gunther Roelkens, Jing Zhang, Laurens Bogaert, Emadreza Soltanian, Maximilien Billet, Ali Uzun, Biwei Pan, Yang Liu, Evangelia Delli, Dongbo Wang, Valeria Bonito Oliva, Lam Thi Ngoc Tran, Xin Guo, He Li, Senbiao Qin, Konstantinos Akritidis, Ye Chen, Yu Xue, Margot Niels, Dennis Maes, Max Kiewiet, Tom Reep, Tom Vanackere, Tom Vandekerckhove, Isaac Luntadila Lufungula, Jasper De Witte, Luis Reis, Stijn Poelman, Ying Tan, Hong Deng, Wim Bogaerts, Geert Morthier, Dries Van Thourhout, Bart Kuyken","doi":"10.1063/5.0181099","DOIUrl":"https://doi.org/10.1063/5.0181099","url":null,"abstract":"We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key enabler for next-generation photonic systems-on-chip.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"34 6 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139092615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solar-blind ultraviolet (SBUV) detection has a great prospect in a wide range of applications, in which the synthesis of semiconductor materials with a suitable bandgap can be an important research focus. In this work, BSnO films with good selectivity for SBUV were grown by magnetron sputtering with the bandgap adjusted from 4.1 to 5.3 eV. Based on the BSnO films, filter-less narrowband SBUV detectors were fabricated first, exhibiting a narrow detection range and an ultra-high responsivity (113 A/W) required by the detection of extremely weak SBUV signals. In addition, graphene/BSnO/SiC heterojunction photovoltaic detectors were also fabricated, with a high photo-to-dark current ratio and an ultra-fast response exhibited under 0 V bias, confirming their ability to handle the detection of transient signals.
{"title":"Boron tin oxide for filterless intrinsic-narrowband solar-blind ultraviolet detectors with tunable photoresponse peak from 231 to 275 nm","authors":"Cunhua Xu, Chaofan Zhang, Lemin Jia, Zhao Wang, Junfang He, Wei Zheng","doi":"10.1063/5.0174556","DOIUrl":"https://doi.org/10.1063/5.0174556","url":null,"abstract":"Solar-blind ultraviolet (SBUV) detection has a great prospect in a wide range of applications, in which the synthesis of semiconductor materials with a suitable bandgap can be an important research focus. In this work, BSnO films with good selectivity for SBUV were grown by magnetron sputtering with the bandgap adjusted from 4.1 to 5.3 eV. Based on the BSnO films, filter-less narrowband SBUV detectors were fabricated first, exhibiting a narrow detection range and an ultra-high responsivity (113 A/W) required by the detection of extremely weak SBUV signals. In addition, graphene/BSnO/SiC heterojunction photovoltaic detectors were also fabricated, with a high photo-to-dark current ratio and an ultra-fast response exhibited under 0 V bias, confirming their ability to handle the detection of transient signals.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"3 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139092612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boris Zabelich, Christian Lafforgue, Edgars Nitiss, Anton Stroganov, Camille-Sophie Brès
Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear applications on a chip. However, due to its amorphous structure, silicon nitride lacks second-order nonlinearity; hence, the platform misses the key functionality of linear electro-optical modulation for photonic integrated circuits. Several approaches have been explored to address this problem, including integration with electro-optic active materials, piezoelectric tuning, and utilization of the thermo-optic effect. In this work, we demonstrate electro-optical modulation in a silicon nitride microring resonator enabled by electric-field poling, eliminating the complexities associated with material integration and providing data modulation speeds up to 75 Mb/s, currently only limited by the electrode design. With an estimated inscribed electric field of 100 V/μm, we achieve an effective second-order susceptibility of 0.45 pm/V. In addition, we derive and confirm the value of the material’s third-order susceptibility, which is responsible for the emergence of second-order nonlinearity. These findings broaden the functionality of silicon nitride as a platform for electro-optic modulation.
{"title":"Silicon nitride electric-field poled microresonator modulator","authors":"Boris Zabelich, Christian Lafforgue, Edgars Nitiss, Anton Stroganov, Camille-Sophie Brès","doi":"10.1063/5.0173507","DOIUrl":"https://doi.org/10.1063/5.0173507","url":null,"abstract":"Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear applications on a chip. However, due to its amorphous structure, silicon nitride lacks second-order nonlinearity; hence, the platform misses the key functionality of linear electro-optical modulation for photonic integrated circuits. Several approaches have been explored to address this problem, including integration with electro-optic active materials, piezoelectric tuning, and utilization of the thermo-optic effect. In this work, we demonstrate electro-optical modulation in a silicon nitride microring resonator enabled by electric-field poling, eliminating the complexities associated with material integration and providing data modulation speeds up to 75 Mb/s, currently only limited by the electrode design. With an estimated inscribed electric field of 100 V/μm, we achieve an effective second-order susceptibility of 0.45 pm/V. In addition, we derive and confirm the value of the material’s third-order susceptibility, which is responsible for the emergence of second-order nonlinearity. These findings broaden the functionality of silicon nitride as a platform for electro-optic modulation.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"36 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139096298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Plasmonic metasurfaces with adjustable optical responses can be achieved through phase change materials (PCMs) with high optical contrast. However, the on–off behavior of the phase change process results in the binary response of photonic devices, limiting the applications to the two-stage modulation. In this work, we propose a reconfigurable metasurface emitter based on a gold nanorod array on a VO2 thin film for achieving continuously tunable narrowband thermal emission. The electrode line connecting the center of each nanorod not only enables emission excitation electrically but also activates the phase transition of VO2 beneath the array layer due to Joule heating. The change in the dielectric environment due to the VO2 phase transition results in the modulation of emissivity from the plasmonic metasurfaces. The device performances regarding critical geometrical parameters are analyzed based on a fully coupled electro-thermo-optical finite element model. This new metasurface structure extends the binary nature of PCM based modulations to continuous reconfigurability and provides new possibilities toward smart metasurface emitters, reflectors, and other nanophotonic devices.
{"title":"Phase change plasmonic metasurface for dynamic thermal emission modulation","authors":"Zexiao Wang, Lin Jing, Xiu Liu, Xiao Luo, Hyeong Seok Yun, Zhuo Li, Sheng Shen","doi":"10.1063/5.0165663","DOIUrl":"https://doi.org/10.1063/5.0165663","url":null,"abstract":"Plasmonic metasurfaces with adjustable optical responses can be achieved through phase change materials (PCMs) with high optical contrast. However, the on–off behavior of the phase change process results in the binary response of photonic devices, limiting the applications to the two-stage modulation. In this work, we propose a reconfigurable metasurface emitter based on a gold nanorod array on a VO2 thin film for achieving continuously tunable narrowband thermal emission. The electrode line connecting the center of each nanorod not only enables emission excitation electrically but also activates the phase transition of VO2 beneath the array layer due to Joule heating. The change in the dielectric environment due to the VO2 phase transition results in the modulation of emissivity from the plasmonic metasurfaces. The device performances regarding critical geometrical parameters are analyzed based on a fully coupled electro-thermo-optical finite element model. This new metasurface structure extends the binary nature of PCM based modulations to continuous reconfigurability and provides new possibilities toward smart metasurface emitters, reflectors, and other nanophotonic devices.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"35 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2024-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139083039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The photothermal effect of graphene, which refers to the effect of converting light absorbed by graphene into heat, offers an effective physical mechanism for the realization of all-optical control devices. In this paper, we explore this physical mechanism for the study of nonlinear mode-coupling effects with three graphene-buried waveguide structures: a graphene-buried long-period waveguide grating, a symmetric directional coupler with graphene buried in two cores, and a symmetric directional coupler with graphene buried in one core. We establish physical models for these graphene-buried waveguide structures based on the coupled-mode theory and experimentally implement these structures with polymer waveguides. Our experimental results agree well with the theoretical analyses. The nonlinear mode-coupling effects generated in the graphene-buried waveguide structures show similar characteristics as those achieved with Kerr nonlinearity, but the input powers required in our experiments are much lower (only several tens of milliwatts), which can be delivered by common continuous-wave lasers. The graphene-buried waveguide platform makes feasible the generation of strong nonlinear mode-coupling effects at low powers and offers much flexibility for nonlinearity engineering, which can greatly facilitate the investigation of nonlinear mode-coupling effects in different waveguide structures for practical applications.
{"title":"Nonlinear mode coupling in graphene-buried optical waveguides","authors":"Lianzhong Jiang, Wenfan Jiang, Kin Seng Chiang","doi":"10.1063/5.0182457","DOIUrl":"https://doi.org/10.1063/5.0182457","url":null,"abstract":"The photothermal effect of graphene, which refers to the effect of converting light absorbed by graphene into heat, offers an effective physical mechanism for the realization of all-optical control devices. In this paper, we explore this physical mechanism for the study of nonlinear mode-coupling effects with three graphene-buried waveguide structures: a graphene-buried long-period waveguide grating, a symmetric directional coupler with graphene buried in two cores, and a symmetric directional coupler with graphene buried in one core. We establish physical models for these graphene-buried waveguide structures based on the coupled-mode theory and experimentally implement these structures with polymer waveguides. Our experimental results agree well with the theoretical analyses. The nonlinear mode-coupling effects generated in the graphene-buried waveguide structures show similar characteristics as those achieved with Kerr nonlinearity, but the input powers required in our experiments are much lower (only several tens of milliwatts), which can be delivered by common continuous-wave lasers. The graphene-buried waveguide platform makes feasible the generation of strong nonlinear mode-coupling effects at low powers and offers much flexibility for nonlinearity engineering, which can greatly facilitate the investigation of nonlinear mode-coupling effects in different waveguide structures for practical applications.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"18 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139066264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Free-space electro-optic (EO) modulators operating at gigahertz and beyond are attractive for a wide range of emerging applications, including high-speed imaging, free-space optical communication, microwave photonics, and diffractive computing. Here, we experimentally demonstrate a high-speed plasmonic metasurface EO modulator operating in a near-infrared wavelength range with a gigahertz modulation bandwidth. To achieve efficient intensity modulation of reflected light from an ultrathin metasurface layer, we utilize the bimodal plasmonic resonance inside a subwavelength metal–insulator–metal grating, which is precisely tuned to satisfy the critical coupling condition. As a result, perfect absorption of −27 dB (99.8%) and a high quality (Q) factor of 113 are obtained at a resonant wavelength of 1650 nm. By incorporating an EO polymer inside the grating, we achieve a modulation depth of up to 9.5 dB under an applied voltage of ±30 V. The 3-dB modulation bandwidth is confirmed to be 1.25 GHz, which is primarily limited by the undesired contact resistance and the output impedance of the driver. Owing to the high electrical conductivity of metallic gratings and a compact device structure with a minimal parasitic capacitance, the demonstrated device can potentially operate at several tens of gigahertz, which opens up exciting opportunities for ultrahigh-speed active metasurface devices in various applications.
自由空间光电（EO）调制器的工作频率可达千兆赫兹或更高，对高速成像、自由空间光通信、微波光子学和衍射计算等各种新兴应用具有吸引力。在这里，我们通过实验展示了一种在近红外波长范围内工作、具有千兆赫调制带宽的高速等离子体元表面 EO 调制器。为了实现对超薄超表面层反射光的高效强度调制，我们利用了亚波长金属-绝缘体-金属光栅内的双模质子共振，并对其进行了精确调谐以满足临界耦合条件。因此，在共振波长为 1650 nm 时，可获得 -27 dB（99.8%）的完美吸收和 113 的高质量（Q）因子。通过在光栅内加入环氧乙烷聚合物，我们在±30 V 的外加电压下实现了高达 9.5 dB 的调制深度。经证实，3 dB 调制带宽为 1.25 GHz，这主要受到非预期接触电阻和驱动器输出阻抗的限制。由于金属光栅的高导电性和寄生电容极小的紧凑型器件结构，所演示的器件有可能在几十千兆赫的频率下工作，这为超高速有源元表面器件在各种应用中的发展提供了令人兴奋的机会。
{"title":"High-speed metasurface modulator using perfectly absorptive bimodal plasmonic resonance","authors":"Jiaqi Zhang, Yuji Kosugi, Makoto Ogasawara, Koto Ariu, Akira Otomo, Toshiki Yamada, Yoshiaki Nakano, Takuo Tanemura","doi":"10.1063/5.0173216","DOIUrl":"https://doi.org/10.1063/5.0173216","url":null,"abstract":"Free-space electro-optic (EO) modulators operating at gigahertz and beyond are attractive for a wide range of emerging applications, including high-speed imaging, free-space optical communication, microwave photonics, and diffractive computing. Here, we experimentally demonstrate a high-speed plasmonic metasurface EO modulator operating in a near-infrared wavelength range with a gigahertz modulation bandwidth. To achieve efficient intensity modulation of reflected light from an ultrathin metasurface layer, we utilize the bimodal plasmonic resonance inside a subwavelength metal–insulator–metal grating, which is precisely tuned to satisfy the critical coupling condition. As a result, perfect absorption of −27 dB (99.8%) and a high quality (Q) factor of 113 are obtained at a resonant wavelength of 1650 nm. By incorporating an EO polymer inside the grating, we achieve a modulation depth of up to 9.5 dB under an applied voltage of ±30 V. The 3-dB modulation bandwidth is confirmed to be 1.25 GHz, which is primarily limited by the undesired contact resistance and the output impedance of the driver. Owing to the high electrical conductivity of metallic gratings and a compact device structure with a minimal parasitic capacitance, the demonstrated device can potentially operate at several tens of gigahertz, which opens up exciting opportunities for ultrahigh-speed active metasurface devices in various applications.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"1 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2023-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139031601","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Giulio Tirabassi, Maria Duque-Gijon, Jordi Tiana-Alsina, Cristina Masoller
Semiconductor lasers with optical feedback are stochastic nonlinear systems that can display complex dynamics and abrupt changes when their operation conditions change. Even very small changes can lead to large variations in the spatial and spectral properties of the laser emission. This makes a semiconductor laser with feedback an ideal system for conducting controlled experiments to test data analysis tools to detect and characterize transitions. Here, we identify feedback-induced transitions by analyzing speckle patterns that are generated after the laser light propagates in an optical fiber. Speckle patterns result from the interference of multiple modes, and their statistical properties are understood, but a direct mathematical model does not exist. Here we show the versatility of the correlation length and the permutation entropy as measures for characterizing speckle patterns. Combining entropy and correlation analysis with speckle contrast analysis, we uncover changes that occur when the laser current increases from below to well above the threshold, which unveils the effects of optical feedback on the coherence of the laser emission.
{"title":"Permutation entropy-based characterization of speckle patterns generated by semiconductor laser light","authors":"Giulio Tirabassi, Maria Duque-Gijon, Jordi Tiana-Alsina, Cristina Masoller","doi":"10.1063/5.0169445","DOIUrl":"https://doi.org/10.1063/5.0169445","url":null,"abstract":"Semiconductor lasers with optical feedback are stochastic nonlinear systems that can display complex dynamics and abrupt changes when their operation conditions change. Even very small changes can lead to large variations in the spatial and spectral properties of the laser emission. This makes a semiconductor laser with feedback an ideal system for conducting controlled experiments to test data analysis tools to detect and characterize transitions. Here, we identify feedback-induced transitions by analyzing speckle patterns that are generated after the laser light propagates in an optical fiber. Speckle patterns result from the interference of multiple modes, and their statistical properties are understood, but a direct mathematical model does not exist. Here we show the versatility of the correlation length and the permutation entropy as measures for characterizing speckle patterns. Combining entropy and correlation analysis with speckle contrast analysis, we uncover changes that occur when the laser current increases from below to well above the threshold, which unveils the effects of optical feedback on the coherence of the laser emission.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"79 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2023-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138819414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Igju Jeon, Changmin Ahn, Chankyu Kim, Seongmin Park, Wonju Jeon, Lingze Duan, Jungwon Kim
Compact and robust frequency-stabilized laser sources are critical for a variety of fields that require stable frequency standards, including field spectroscopy, radio astronomy, microwave generation, and geophysical monitoring. In this work, we applied a simple and compact fiber ring-resonator configuration that can stabilize both a continuous-wave laser and a self-referenced optical frequency comb to a vibration-insensitive optical fiber delay-line. We could achieve a thermal-noise-limited frequency noise level in the 10 Hz–1 kHz offset frequency range for both the continuous-wave laser and the optical frequency comb with the minimal frequency instability of 2.7 × 10−14 at 0.03-s and 2.6 × 10−14 at 0.01-s averaging time, respectively, under non-vacuum conditions. The optical fiber spool, working as a delay reference, is designed to be insensitive to external vibrations, with a vibration sensitivity of sub-10−10 (1/g) and a volume of 32 ml. Finally, the ring-resonator setup is packaged in a palm-sized aluminum case with 171-ml volume with a vibration-insensitive spool, as well as an even smaller 97-ml-volume case with an ultracompact 9-ml miniaturized fiber spool.
{"title":"Palm-sized, vibration-insensitive, and vacuum-free all-fiber-photonic module for 10−14-level stabilization of CW lasers and frequency combs","authors":"Igju Jeon, Changmin Ahn, Chankyu Kim, Seongmin Park, Wonju Jeon, Lingze Duan, Jungwon Kim","doi":"10.1063/5.0160834","DOIUrl":"https://doi.org/10.1063/5.0160834","url":null,"abstract":"Compact and robust frequency-stabilized laser sources are critical for a variety of fields that require stable frequency standards, including field spectroscopy, radio astronomy, microwave generation, and geophysical monitoring. In this work, we applied a simple and compact fiber ring-resonator configuration that can stabilize both a continuous-wave laser and a self-referenced optical frequency comb to a vibration-insensitive optical fiber delay-line. We could achieve a thermal-noise-limited frequency noise level in the 10 Hz–1 kHz offset frequency range for both the continuous-wave laser and the optical frequency comb with the minimal frequency instability of 2.7 × 10−14 at 0.03-s and 2.6 × 10−14 at 0.01-s averaging time, respectively, under non-vacuum conditions. The optical fiber spool, working as a delay reference, is designed to be insensitive to external vibrations, with a vibration sensitivity of sub-10−10 (1/g) and a volume of 32 ml. Finally, the ring-resonator setup is packaged in a palm-sized aluminum case with 171-ml volume with a vibration-insensitive spool, as well as an even smaller 97-ml-volume case with an ultracompact 9-ml miniaturized fiber spool.","PeriodicalId":8198,"journal":{"name":"APL Photonics","volume":"79 1","pages":""},"PeriodicalIF":5.6,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138687730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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