Pub Date : 2024-09-16DOI: 10.1109/JMW.2024.3451371
Adrian Tang;Emmanuel Decrossas;Zaid Towfic;Andrew Daniel;Joshua Miller;Carlos Y. Villalpando;Nacer Chahat;Yanghyo Kim
This article presents a digital proximity transceiver for next the generation of small Mars robotic surface exploration missions operating at the deep space exploration UHF band (390–450 MHz). The developed transceiver adopts an almost all-digital architecture, except for a single variable gain pre-amplifier placed before the receiver ADC. All other functions of the transceiver (filtering, up-conversion, down-conversion) are implemented as digital signal processing circuitry. The transceiver highly oversamples the UHF band at a rate of 1280 MS/s allowing additional dynamic range to be obtained with modest bit-depth data converters (10-bit transmit and 7-bit receive). The transceiver expects an external baseband processor implemented in software or programmable logic for Channel-coding, Link and Network-layer operations. It also contains a stand-alone hailing function that allows it to wake up downstream avionics without requiring baseband processing when a hailing signal is received within a programmable bandwidth. The CMOS transceiver chip is implemented in a 65 nm CMOS technology and consumes a total power of 356 mW, not counting the need for an external III-V Low Noise Amplifier and Power Amplifier.
{"title":"An Almost-All Digital Proximity Transceiver for Mars Surface Missions","authors":"Adrian Tang;Emmanuel Decrossas;Zaid Towfic;Andrew Daniel;Joshua Miller;Carlos Y. Villalpando;Nacer Chahat;Yanghyo Kim","doi":"10.1109/JMW.2024.3451371","DOIUrl":"https://doi.org/10.1109/JMW.2024.3451371","url":null,"abstract":"This article presents a digital proximity transceiver for next the generation of small Mars robotic surface exploration missions operating at the deep space exploration UHF band (390–450 MHz). The developed transceiver adopts an almost all-digital architecture, except for a single variable gain pre-amplifier placed before the receiver ADC. All other functions of the transceiver (filtering, up-conversion, down-conversion) are implemented as digital signal processing circuitry. The transceiver highly oversamples the UHF band at a rate of 1280 MS/s allowing additional dynamic range to be obtained with modest bit-depth data converters (10-bit transmit and 7-bit receive). The transceiver expects an external baseband processor implemented in software or programmable logic for Channel-coding, Link and Network-layer operations. It also contains a stand-alone hailing function that allows it to wake up downstream avionics without requiring baseband processing when a hailing signal is received within a programmable bandwidth. The CMOS transceiver chip is implemented in a 65 nm CMOS technology and consumes a total power of 356 mW, not counting the need for an external III-V Low Noise Amplifier and Power Amplifier.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"653-665"},"PeriodicalIF":6.9,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10680469","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A simple technique for frequency-static multi-notch/transmission-zero (TZ) creation in RF filters with single- and dual-band bandpass transfer functions is presented. It is based on the direct connection of two identical inline filtering units without stopband TZs in an in-parallel configuration by means of unequal input/output transmission-line segments for each branch. Unlike in typical transversal-signal-interference and channelized filter architectures, the overall length of these connecting transmission-line segments for both branches is the same. Thus, the multi-notch/TZ generation in the whole filtering action is accomplished by differently distributing this total electrical length between the input/output transmission-line segments for the two branches. As such, enhanced selectivity in the filtering response with several embedded notches when compared to the filtering transfer function of an isolated branch can be obtained. To experimentally demonstrate the generality of this approach, two proof-of-concept filter prototypes corresponding to a 2 $/$ 3-GHz microstrip dual-band bandpass filter (BPF) and a 62-GHz waveguide BPF are built and tested.
{"title":"Out-of-Band Multi-Notch Generation in RF Filters Through Parallelization","authors":"Mohamed Malki;Li Yang;Talal Skaik;Yi Wang;Roberto Gómez-García","doi":"10.1109/JMW.2024.3451130","DOIUrl":"https://doi.org/10.1109/JMW.2024.3451130","url":null,"abstract":"A simple technique for frequency-static multi-notch/transmission-zero (TZ) creation in RF filters with single- and dual-band bandpass transfer functions is presented. It is based on the direct connection of two identical inline filtering units without stopband TZs in an in-parallel configuration by means of unequal input/output transmission-line segments for each branch. Unlike in typical transversal-signal-interference and channelized filter architectures, the overall length of these connecting transmission-line segments for both branches is the same. Thus, the multi-notch/TZ generation in the whole filtering action is accomplished by differently distributing this total electrical length between the input/output transmission-line segments for the two branches. As such, enhanced selectivity in the filtering response with several embedded notches when compared to the filtering transfer function of an isolated branch can be obtained. To experimentally demonstrate the generality of this approach, two proof-of-concept filter prototypes corresponding to a 2\u0000<inline-formula><tex-math>$/$</tex-math></inline-formula>\u00003-GHz microstrip dual-band bandpass filter (BPF) and a 62-GHz waveguide BPF are built and tested.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"749-758"},"PeriodicalIF":6.9,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10680458","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The need for size and cost-efficient vector network analyzer (VNA) frequency extension modules (VNAX module) is driven by new applications in research and industry. Responding to this potential demand, we present a novel D-band VNAX module based on a single SiGe MMIC. Our work addresses the challenges associated with integrating components on a single chip compared to conventional commercial modules, which typically rely on discrete components. We provide a comprehensive discussion covering the performance of system blocks, such as multiplier chains and receivers, and their impact on the module's performance. In addition, we present extensive measurements of the entire system, including magnitude-and phase stability and dynamic ranges. At a resolution bandwidth (RBW) of 10 Hz, our module shows a system dynamic range (SDR) above 90 dB for the frequency range of 110 GHz to 151 GHz and a maximum SDR close to 100 dB at 122 GHz. The corresponding receiver dynamic range within the D-band ranges from 113 dB to 125 dB, and the Test Port power is between −27 dBm and −16 dBm. In addition, we present and evaluate several measurements of different passive components that verify the calibration capability of our module.
研究和工业领域的新应用推动了对体积小、成本低的矢量网络分析仪（VNA）频率扩展模块（VNAX 模块）的需求。为了满足这一潜在需求，我们推出了基于单个硅锗 MMIC 的新型 D 波段 VNAX 模块。与通常依赖于分立元件的传统商业模块相比，我们的工作解决了在单个芯片上集成元件所面临的挑战。我们全面讨论了乘法器链和接收器等系统模块的性能及其对模块性能的影响。此外，我们还对整个系统进行了广泛的测量，包括幅度和相位稳定性以及动态范围。在分辨率带宽（RBW）为 10 Hz 时，我们的模块在 110 GHz 至 151 GHz 的频率范围内显示出高于 90 dB 的系统动态范围（SDR），在 122 GHz 时显示出接近 100 dB 的最大 SDR。D 波段内相应的接收器动态范围为 113 dB 至 125 dB，测试端口功率介于 -27 dBm 和 -16 dBm 之间。此外，我们还介绍并评估了不同无源元件的测量结果，以验证我们模块的校准能力。
{"title":"Proving the Feasibility of D-Band Single SiGe MMIC Vector Network Analyzer Extension Modules With Large System Dynamic Range","authors":"Justin Romstadt;Lukas Dierkes;Stephan Hauptmeier;Tobias T. Braun;Hakan Papurcu;Jens Richter;Pascal Stadler;Ahmad Zaben;Klaus Aufinger;Jan Barowski;Nils Pohl","doi":"10.1109/JMW.2024.3444040","DOIUrl":"https://doi.org/10.1109/JMW.2024.3444040","url":null,"abstract":"The need for size and cost-efficient vector network analyzer (VNA) frequency extension modules (VNAX module) is driven by new applications in research and industry. Responding to this potential demand, we present a novel D-band VNAX module based on a single SiGe MMIC. Our work addresses the challenges associated with integrating components on a single chip compared to conventional commercial modules, which typically rely on discrete components. We provide a comprehensive discussion covering the performance of system blocks, such as multiplier chains and receivers, and their impact on the module's performance. In addition, we present extensive measurements of the entire system, including magnitude-and phase stability and dynamic ranges. At a resolution bandwidth (RBW) of 10 Hz, our module shows a system dynamic range (SDR) above 90 dB for the frequency range of 110 GHz to 151 GHz and a maximum SDR close to 100 dB at 122 GHz. The corresponding receiver dynamic range within the D-band ranges from 113 dB to 125 dB, and the Test Port power is between −27 dBm and −16 dBm. In addition, we present and evaluate several measurements of different passive components that verify the calibration capability of our module.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"706-720"},"PeriodicalIF":6.9,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10679161","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A fully integrated millimeter-wave power amplifier has been designed and fabricated using a 0.13 μm SiGe BiCMOS process technology. The design is based on extracting device parasitics and utilizing them in a matching network based on a bandpass topology. This design technique assisted in attaining a wideband performance without using any on-chip inductors or transformers. The amplifier operates over the Ka & V -band ranging from 36 GHz to 53 GHz with a peak saturated power of 17.7 dBm, peak power added efficiency (PAE) of 20.5% and a gain of 19.7 dB at 46 GHz. The performance is also validated with wideband 5G signals of 50 MHz and 100 MHz channel bandwidth using 64-QAM in n262 5G NR FR2 bands (47.2 GHz–48.2 GHz). The digital predistortion is used to linearize the PA in order to qualify the required spectral mask with an error vector magnitude of 2.2%. The proposed design is compact and occupies a chip area of 1.11 mm 2 , including the pads.
{"title":"Design of a Fully Integrated Power Amplifier at Ka-V Band for 5G Transceivers","authors":"Avinash Singh;Amit Singh;Bargaje Ganesh Pandurang;Karun Rawat","doi":"10.1109/JMW.2024.3449421","DOIUrl":"https://doi.org/10.1109/JMW.2024.3449421","url":null,"abstract":"A fully integrated millimeter-wave power amplifier has been designed and fabricated using a 0.13 μm SiGe BiCMOS process technology. The design is based on extracting device parasitics and utilizing them in a matching network based on a bandpass topology. This design technique assisted in attaining a wideband performance without using any on-chip inductors or transformers. The amplifier operates over the \u0000<italic>Ka</i>\u0000 & \u0000<italic>V</i>\u0000-band ranging from 36 GHz to 53 GHz with a peak saturated power of 17.7 dBm, peak power added efficiency (PAE) of 20.5% and a gain of 19.7 dB at 46 GHz. The performance is also validated with wideband 5G signals of 50 MHz and 100 MHz channel bandwidth using 64-QAM in n262 5G NR FR2 bands (47.2 GHz–48.2 GHz). The digital predistortion is used to linearize the PA in order to qualify the required spectral mask with an error vector magnitude of 2.2%. The proposed design is compact and occupies a chip area of 1.11 mm\u0000<sup>2</sup>\u0000, including the pads.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"742-748"},"PeriodicalIF":6.9,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10671575","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-09DOI: 10.1109/JMW.2024.3427710
Pan Xu;Junwei Zhou;Zhizhang David Chen;Xudong Yang;Hongli Yan;Željka Lučev Vasić;Mario Cifrek;Sio Hang Pun;Mang I Vai;Yueming Gao
ElectricalImpedance Myography (EIM) is an innovative, non-invasive technique offering a convenient means of localized exogenous electrophysiological recording. By measuring muscle impedance parameters, this method characterizes the physiological state of muscles, functioning as a biomarker for muscle contractility, injuries, and the progression of neuromuscular diseases. This paper provides an overview of the current state of EIM technology development, along with modeling and data analysis methods, focusing on their application requirements. It further highlights the advancements in EIM research within the realm of sports health, emphasizing its efficacy in identifying injuries and monitoring wound healing, and discusses existing technological limitations. Additionally, the paper explores future research directions. Serving as a transient biosensor during physical activity, EIM holds significant potential in sports health. It presents a promising alternative to invasive and costly clinical assessment methods, positioning itself as a viable personal monitoring tool for both professional athletes and fitness enthusiasts. Nevertheless, the resolution of technical challenges and the establishment of industry-standard implementation programs are essential prerequisites for EIM to evolve into a standard clinical assessment tool.
{"title":"Advancements and Challenges in Electrical Impedance Myography (EIM): A Comprehensive Overview of Technology Development, Applications in Sports Health, and Future Directions","authors":"Pan Xu;Junwei Zhou;Zhizhang David Chen;Xudong Yang;Hongli Yan;Željka Lučev Vasić;Mario Cifrek;Sio Hang Pun;Mang I Vai;Yueming Gao","doi":"10.1109/JMW.2024.3427710","DOIUrl":"https://doi.org/10.1109/JMW.2024.3427710","url":null,"abstract":"ElectricalImpedance Myography (EIM) is an innovative, non-invasive technique offering a convenient means of localized exogenous electrophysiological recording. By measuring muscle impedance parameters, this method characterizes the physiological state of muscles, functioning as a biomarker for muscle contractility, injuries, and the progression of neuromuscular diseases. This paper provides an overview of the current state of EIM technology development, along with modeling and data analysis methods, focusing on their application requirements. It further highlights the advancements in EIM research within the realm of sports health, emphasizing its efficacy in identifying injuries and monitoring wound healing, and discusses existing technological limitations. Additionally, the paper explores future research directions. Serving as a transient biosensor during physical activity, EIM holds significant potential in sports health. It presents a promising alternative to invasive and costly clinical assessment methods, positioning itself as a viable personal monitoring tool for both professional athletes and fitness enthusiasts. Nevertheless, the resolution of technical challenges and the establishment of industry-standard implementation programs are essential prerequisites for EIM to evolve into a standard clinical assessment tool.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"605-625"},"PeriodicalIF":6.9,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10632561","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-31DOI: 10.1109/JMW.2024.3427726
Sen Bing;Khengdauliu Chawang;J.-C. Chiao
In this work, a noninvasive vein finder based on a tuned microwave loop resonator has been demonstrated to locate the vein in a cost-effective, reliable, and convenient way, addressing the challenges in venipuncture, especially in cases of difficult venous access. The sensor is a tuned loop resonator with a radius of 4.7 mm, incorporating a self-tuning pad and operating at 3.25 GHz with a reflection coefficient of $-$ 58 dB. It provides localized high-intensity electric fields that penetrate into tissues with sufficient depths. The sensor is based on the detection of electromagnetic resonant frequency shift that is susceptible to the distinctive dielectric properties of blood vessels inside the skin. The extensive simulations and experimental measurements on male and female subjects validate its effectiveness with consistent and distinguishable resonant frequency shifts. The sensor's stability across different forearm locations, its ability to differentiate between arteries and veins, and its adherence to safety regulations with low-power microwave signals contribute to its robustness. It shows great promise for improving venipuncture procedures, reducing complications, and enhancing patient comfort in a low-cost and noninvasive way.
{"title":"A Noninvasive Vein Finder Based on a Tuned Microwave Loop Resonator","authors":"Sen Bing;Khengdauliu Chawang;J.-C. Chiao","doi":"10.1109/JMW.2024.3427726","DOIUrl":"https://doi.org/10.1109/JMW.2024.3427726","url":null,"abstract":"In this work, a noninvasive vein finder based on a tuned microwave loop resonator has been demonstrated to locate the vein in a cost-effective, reliable, and convenient way, addressing the challenges in venipuncture, especially in cases of difficult venous access. The sensor is a tuned loop resonator with a radius of 4.7 mm, incorporating a self-tuning pad and operating at 3.25 GHz with a reflection coefficient of \u0000<inline-formula><tex-math>$-$</tex-math></inline-formula>\u000058 dB. It provides localized high-intensity electric fields that penetrate into tissues with sufficient depths. The sensor is based on the detection of electromagnetic resonant frequency shift that is susceptible to the distinctive dielectric properties of blood vessels inside the skin. The extensive simulations and experimental measurements on male and female subjects validate its effectiveness with consistent and distinguishable resonant frequency shifts. The sensor's stability across different forearm locations, its ability to differentiate between arteries and veins, and its adherence to safety regulations with low-power microwave signals contribute to its robustness. It shows great promise for improving venipuncture procedures, reducing complications, and enhancing patient comfort in a low-cost and noninvasive way.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"626-638"},"PeriodicalIF":6.9,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10616378","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-30DOI: 10.1109/JMW.2024.3429615
Reza Nikandish
In this article, we present a futuristic perspective on GaN integrated circuit technology, discuss technical challenges that hinder leveraging the capabilities of the GaN process, and provide recommendations to push its limits of integration and functionality. We explore the limitations of current GaN processes at the process, circuit, and system levels, and present some potential developments to mitigate these limitations. The most recent progresses in GaN circuits has been inspired by the quest for higher performance, which has influenced innovations in circuit and system architectures. A promising solution is to pursue a functionality-oriented design paradigm in parallel with the traditional performance-oriented design approach . A review of state-of-the-art GaN transceivers indicates that most comprise merely a power amplifier (PA), a low-noise amplifier (LNA), and transmit-receive (T/R) switches. We propose three disruptive directions that potentially can reshape the future of highly integrated GaN systems, including a digital PA, an integrated sensing and communication (ISAC) transceiver, and GaN-CMOS chiplets in package, and investigate their prospects and challenges.
{"title":"GaN System-on-Chip: Pushing the Limits of Integration and Functionality","authors":"Reza Nikandish","doi":"10.1109/JMW.2024.3429615","DOIUrl":"https://doi.org/10.1109/JMW.2024.3429615","url":null,"abstract":"In this article, we present a futuristic perspective on GaN integrated circuit technology, discuss technical challenges that hinder leveraging the capabilities of the GaN process, and provide recommendations to push its limits of integration and functionality. We explore the limitations of current GaN processes at the process, circuit, and system levels, and present some potential developments to mitigate these limitations. The most recent progresses in GaN circuits has been inspired by the quest for higher performance, which has influenced innovations in circuit and system architectures. A promising solution is to pursue a \u0000<italic>functionality-oriented design paradigm</i>\u0000 in parallel with the traditional \u0000<italic>performance-oriented design approach</i>\u0000. A review of state-of-the-art GaN transceivers indicates that most comprise merely a power amplifier (PA), a low-noise amplifier (LNA), and transmit-receive (T/R) switches. We propose three disruptive directions that potentially can reshape the future of highly integrated GaN systems, including a digital PA, an integrated sensing and communication (ISAC) transceiver, and GaN-CMOS chiplets in package, and investigate their prospects and challenges.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"594-604"},"PeriodicalIF":6.9,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10614650","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-19DOI: 10.1109/JMW.2024.3419430
Jan Schoepfel;Tobias T. Braun;Julia Hellwig;Holger Rücker;Nils Pohl
The number of environment-detecting sensors inside cars continuously increases, to enable failsafe autonomous driving. With more sensors, the probability of performance degrading interferences increases. A promising solution to the interferences is orthogonal frequency division multiplex (OFDM) radar. Due to the complex modulation scheme, the analog front end, especially the power amplifier in the transmitter, has to deal with a high peak-to-average power ratio. Therefore, conventional amplifiers have to be operated in power back-off to maintain linear operation at the drawback of reduced power-added efficiency. To mitigate this problem, a Doherty power amplifier for an automotive radar transceiver is proposed. In this work, we present a design methodology for an integrated Doherty amplifier for automotive radar applications, focussing on the theory of operation by analyzing transistor-level simulations. Small- and large signal simulations analyze the concept of load modulation for a Doherty amplifier in the automotive frequency band from 76--81 GHz. Using a fully differential transmission-line-based approach, we showcase the superior performance of an automotive Doherty amplifier over an conventional state-of-the-art reference amplifier. In measurements, the proposed Doherty amplifier achieves a saturated output power of 17.2 dBm with a peak power-added efficiency of 11.6%. When operating in 6 dB back-off, the PAE still amounts to 6.1%. Thereby we propose to improve conventional automotive power amplifiers by incorporating them into a Doherty amplifier.
{"title":"A 79 GHz SiGe Doherty Power Amplifier Suitable for Next-Generation Automotive Radar","authors":"Jan Schoepfel;Tobias T. Braun;Julia Hellwig;Holger Rücker;Nils Pohl","doi":"10.1109/JMW.2024.3419430","DOIUrl":"https://doi.org/10.1109/JMW.2024.3419430","url":null,"abstract":"The number of environment-detecting sensors inside cars continuously increases, to enable failsafe autonomous driving. With more sensors, the probability of performance degrading interferences increases. A promising solution to the interferences is orthogonal frequency division multiplex (OFDM) radar. Due to the complex modulation scheme, the analog front end, especially the power amplifier in the transmitter, has to deal with a high peak-to-average power ratio. Therefore, conventional amplifiers have to be operated in power back-off to maintain linear operation at the drawback of reduced power-added efficiency. To mitigate this problem, a Doherty power amplifier for an automotive radar transceiver is proposed. In this work, we present a design methodology for an integrated Doherty amplifier for automotive radar applications, focussing on the theory of operation by analyzing transistor-level simulations. Small- and large signal simulations analyze the concept of load modulation for a Doherty amplifier in the automotive frequency band from 76--81 GHz. Using a fully differential transmission-line-based approach, we showcase the superior performance of an automotive Doherty amplifier over an conventional state-of-the-art reference amplifier. In measurements, the proposed Doherty amplifier achieves a saturated output power of 17.2 dBm with a peak power-added efficiency of 11.6%. When operating in 6 dB back-off, the PAE still amounts to 6.1%. Thereby we propose to improve conventional automotive power amplifiers by incorporating them into a Doherty amplifier.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"721-732"},"PeriodicalIF":6.9,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10605125","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1109/JMW.2024.3421535
Mohammed R. A. Nasser;Dimitra Psychogiou
This paper presents an RF-switchless two-bandpass filter (BPF) manifold with continuous multi-octave center frequency ( fcen ) and bandwidth (BW) tuning capabilities that are demonstrated in a wide range of frequency range 1 (FR1) bands, spanning from L-band to C-band. Specifically, the proposed RF filtering component operates in three distinct modes of operation, namely: i) single-band, ii) dual-band, and iii) all-reject—achieved by intrinsically switching ON/OFF its two BPF branches. It is based on two tune-all BPFs that are combined with two high-pass/low-pass RF diplexer-based filtering junctions. A technique to minimize insertion loss (IL) using varactors and high- Q static DC block capacitors is demonstrated. The experimental prototype exhibits: i) a single-band mode of operation with fcen tuning between 1.89–7.28 GHz, BW tuning ratio of 3–4.4:1 and minimum in-band insertion loss (IL): 2.3–5.7 dB), ii) a dual-band mode of operation with two independently tuned bands, and iii) an all-reject mode of operation with isolation < 15 dB between DC and 18 GHz.
{"title":"Switchless Multi-Octave Tune-All BPF Manifold Using Low-Pass/High-Pass Diplexer Junctions","authors":"Mohammed R. A. Nasser;Dimitra Psychogiou","doi":"10.1109/JMW.2024.3421535","DOIUrl":"https://doi.org/10.1109/JMW.2024.3421535","url":null,"abstract":"This paper presents an RF-switchless two-bandpass filter (BPF) manifold with continuous multi-octave center frequency (\u0000<italic>f<sub>cen</sub></i>\u0000) and bandwidth (BW) tuning capabilities that are demonstrated in a wide range of frequency range 1 (FR1) bands, spanning from L-band to C-band. Specifically, the proposed RF filtering component operates in three distinct modes of operation, namely: i) single-band, ii) dual-band, and iii) all-reject—achieved by intrinsically switching ON/OFF its two BPF branches. It is based on two tune-all BPFs that are combined with two high-pass/low-pass RF diplexer-based filtering junctions. A technique to minimize insertion loss (IL) using varactors and high-\u0000<italic>Q</i>\u0000 static DC block capacitors is demonstrated. The experimental prototype exhibits: i) a single-band mode of operation with \u0000<italic>f<sub>cen</sub></i>\u0000 tuning between 1.89–7.28 GHz, BW tuning ratio of 3–4.4:1 and minimum in-band insertion loss (IL): 2.3–5.7 dB), ii) a dual-band mode of operation with two independently tuned bands, and iii) an all-reject mode of operation with isolation < 15 dB between DC and 18 GHz.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 4","pages":"759-766"},"PeriodicalIF":6.9,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10602512","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142408753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-15DOI: 10.1109/JMW.2024.3419772
Peter H. Siegel
Welcome to the summer 2024 issue of IEEE Journal of Microwaves! This month we bring you twenty-one new research papers plus our 2023 Impact Factor! After three and a half anxious years and countless hours of effort we have now received our Clarivate rankings and the news is good. The 2024 Journal Citation Report came out on June 20 and IEEE Journal of Microwaves received a journal impact factor (JIF) of 6.9, putting us 34 th of 354 journals in electrical engineering and 3rd amongst journals in the Emerging Sources Citation Index (ESCI). Our Scopus Citescore was also received and lists us at 10.7. We are off to a good start and have plans to move to bimonthly issues in 2025. Keep an eye out for our upcoming special issue on Microwaves in Climate Change towards the end of this year.
{"title":"Introduction to the Summer 2024 Issue","authors":"Peter H. Siegel","doi":"10.1109/JMW.2024.3419772","DOIUrl":"https://doi.org/10.1109/JMW.2024.3419772","url":null,"abstract":"Welcome to the summer 2024 issue of \u0000<sc>IEEE Journal of Microwaves!</small>\u0000 This month we bring you twenty-one new research papers plus our 2023 Impact Factor! After three and a half anxious years and countless hours of effort we have now received our Clarivate rankings and the news is good. The 2024 Journal Citation Report came out on June 20 and \u0000<sc>IEEE Journal of Microwaves</small>\u0000 received a journal impact factor (JIF) of 6.9, putting us 34\u0000<sup>th</sup>\u0000 of 354 journals in electrical engineering and \u0000<bold>3<sup>rd</sup></b>\u0000 amongst journals in the Emerging Sources Citation Index (ESCI). Our Scopus Citescore was also received and lists us at 10.7. We are off to a good start and have plans to move to bimonthly issues in 2025. Keep an eye out for our upcoming special issue on Microwaves in Climate Change towards the end of this year.","PeriodicalId":93296,"journal":{"name":"IEEE journal of microwaves","volume":"4 3","pages":"307-317"},"PeriodicalIF":6.9,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10599374","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141630989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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