Pub Date : 2023-01-01DOI: 10.15251/cl.2023.205.367
A. J. Jarjees Alsoofy, R. Ali, Z. A. Mosa, N. Habubi, S. Chiad
Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance decreased as the Ni films were doped, respectively. Additionally, it was discovered that all produced films had absorption coefficients larger than (α >104 𝑐𝑐𝑚𝑚- 1 ) and that the value of this coefficient rises with increasing doping. The films exhibited all direct optical energy gaps, according to the findings (CdSe). As the doping fraction decreased, the gap values decreased from 1.72 eV to 1.62 eV.
{"title":"Structural, morphology and optical properties studies of Ni doped CdSe thin films","authors":"A. J. Jarjees Alsoofy, R. Ali, Z. A. Mosa, N. Habubi, S. Chiad","doi":"10.15251/cl.2023.205.367","DOIUrl":"https://doi.org/10.15251/cl.2023.205.367","url":null,"abstract":"Thermal evaporation was used to prepare nickel (Ni) doped cadmium selenide thin films in different proportions (0, 1 and 3) wt.% on glass substrates at room temperature. According to XRD examination, all films possessed a polycrystalline hexagonal structure, with the (002) plane as the ideal orientation. According to AFM analysis, the average particle size decreases as the amount of doping increases, showing that the distribution of grains has become more uniform. The transmission and distortion ratios of the films were measured to learn more about their optical properties, which revealed that the (CdSe) films' transmittance decreased as the Ni films were doped, respectively. Additionally, it was discovered that all produced films had absorption coefficients larger than (α >104 𝑐𝑐𝑚𝑚- 1 ) and that the value of this coefficient rises with increasing doping. The films exhibited all direct optical energy gaps, according to the findings (CdSe). As the doping fraction decreased, the gap values decreased from 1.72 eV to 1.62 eV.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Alwany, G. Youssef, M. Algradee, M. Abdel-Rahim, A. Alnakhlani, B. Hassan
Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass substrates. The influence of annealing temperature (Tann.) on the structural and optical properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index (n) and the thickness of the films (d) were calculated using Swanepoel’s method for the films annealed at (423 K). The mechanism of optical absorption follows the rule of direct transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635 eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated and found to the increase by increasing Tann. The dispersion of the n was discussed in terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential factor (σo).
{"title":"Structural, Swanepoel’s method, optical and electrical parameters of vacuum evaporated Zn50Se50 thin films","authors":"A. Alwany, G. Youssef, M. Algradee, M. Abdel-Rahim, A. Alnakhlani, B. Hassan","doi":"10.15251/cl.2023.201.19","DOIUrl":"https://doi.org/10.15251/cl.2023.201.19","url":null,"abstract":"Thin films of Zn50Se50 were prepared by the vacuum evaporation technique on glass substrates. The influence of annealing temperature (Tann.) on the structural and optical properties of ZnSe polycrystalline films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmittance T (λ). The crystalline phases that were found in the Zn50Se50 thin films are ZnSe, Se and Zn. The refractive index (n) and the thickness of the films (d) were calculated using Swanepoel’s method for the films annealed at (423 K). The mechanism of optical absorption follows the rule of direct transition. The values of band gap (EG) were found to decrease from about 2.933 to 2.635 eV with the increasin of the Tann. from 300 to 423 K. Urbach energy (EU) was calculated and found to the increase by increasing Tann. The dispersion of the n was discussed in terms of the single-oscillator Wemple and DiDomenico model. The Arrhenius formula was used to discuss the electrical conductivity (σDC), activation energy (ΔE) and preexponential factor (σo).","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46771467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Kumari, C. Singh, R. Agrawal, B. L. Choudhary, A. Verma
Herein, we have inquired the structural, electronic and thermoelectric properties of the couple of chalcopyrite structured solids LiAlX2 (X=S and Se) with the help of density functional theory (DFT), which is tracked by resolution of the Boltzmann transport equation with the constant relaxation time calculations. The LDA (Localized Density Approximation), PBE (Perdew-Burke-Ernzerhof), PBEsol (PBE functional revised for solids) and WC (Wu-Cohen) exchange correlation potentials have been used. The calculated lattice constants a = 5.271 Å; c = 10.178 Å and a = 6.226 Å; c = 12.165 Å for LiAlS2 and LiAlSe2 respectively and the band gap of the mentioned compounds are found in range from 1.74 eV to 3.13 eV. The dependency of thermoelectric parameters are calculated with different temperature (300-800K) and carrier concentration 1018 1019 cm-3 . From the study of ZT (figure of merit’s ZT= S2 σT/κ the dimensionless parameter) and it is found that it’s value for both the compounds in n-type as well as in p-type region is ‘unity’. Since these compounds can be the promising candidate for thermoelectric devices also these compounds are non-toxic, eco-friendly and good alternative for the green and renewable source of electric power generators.
{"title":"Structural, electronic and thermoelectric properties of LiAlX2 (X=S and Se) chalcopyrites: promising for thermoelectric power generators","authors":"J. Kumari, C. Singh, R. Agrawal, B. L. Choudhary, A. Verma","doi":"10.15251/cl.2023.201.73","DOIUrl":"https://doi.org/10.15251/cl.2023.201.73","url":null,"abstract":"Herein, we have inquired the structural, electronic and thermoelectric properties of the couple of chalcopyrite structured solids LiAlX2 (X=S and Se) with the help of density functional theory (DFT), which is tracked by resolution of the Boltzmann transport equation with the constant relaxation time calculations. The LDA (Localized Density Approximation), PBE (Perdew-Burke-Ernzerhof), PBEsol (PBE functional revised for solids) and WC (Wu-Cohen) exchange correlation potentials have been used. The calculated lattice constants a = 5.271 Å; c = 10.178 Å and a = 6.226 Å; c = 12.165 Å for LiAlS2 and LiAlSe2 respectively and the band gap of the mentioned compounds are found in range from 1.74 eV to 3.13 eV. The dependency of thermoelectric parameters are calculated with different temperature (300-800K) and carrier concentration 1018 1019 cm-3 . From the study of ZT (figure of merit’s ZT= S2 σT/κ the dimensionless parameter) and it is found that it’s value for both the compounds in n-type as well as in p-type region is ‘unity’. Since these compounds can be the promising candidate for thermoelectric devices also these compounds are non-toxic, eco-friendly and good alternative for the green and renewable source of electric power generators.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46062494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ge12.5Se87.5-xTex (0≤x≤45) glasses were selected for elucidating the composition-dependent properties and network structure of Te-containing glasses. With increasing Te content (x), Vickers hardness (Hv) and glass transition temperature (Tg) initially increased and then decreased, showing a compositional threshold at x=27.5. It is found that the compositional trend of Hv and Tg is in good accordance with the structural evolution studied by Raman spectra. The results suggest that the introduction of Te leads to the evolution of the network connectivity and average bond strength of Ge12.5Se87.5-xTex glass structure, which imposes an opposite impact on the structural properties (Hv and Tg). This work provides a new insight to the structure-property correlation of Ge-Se-Te, which would facilitate the understanding of the structural role of Te in ChGs.
{"title":"Composition-dependent properties and network structure of Ge-Se-Te chalcogenide glasses","authors":"L. Yang, G. Zhou, C. G. Lin","doi":"10.15251/cl.2023.201.1","DOIUrl":"https://doi.org/10.15251/cl.2023.201.1","url":null,"abstract":"Ge12.5Se87.5-xTex (0≤x≤45) glasses were selected for elucidating the composition-dependent properties and network structure of Te-containing glasses. With increasing Te content (x), Vickers hardness (Hv) and glass transition temperature (Tg) initially increased and then decreased, showing a compositional threshold at x=27.5. It is found that the compositional trend of Hv and Tg is in good accordance with the structural evolution studied by Raman spectra. The results suggest that the introduction of Te leads to the evolution of the network connectivity and average bond strength of Ge12.5Se87.5-xTex glass structure, which imposes an opposite impact on the structural properties (Hv and Tg). This work provides a new insight to the structure-property correlation of Ge-Se-Te, which would facilitate the understanding of the structural role of Te in ChGs.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41899965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/cl.2023.207.535
S. Mahla, R. Agrawal, S. Kumar, P. Singh, M. Lal, S. Singh, A. Verma
A subclass of ternary intermetallic known as Heusler compounds is being employed in the steel industry to increase material strength. This study examines the structural, electrical, optical, and magnetic properties of Co2VZ (Z=Al, Bi, Ge, Si) compounds using two different methods. First is full potential linearized augmented plane wave (FP-LAPW) method by WIEN2k and second is pseudo potential method by Atomic Tool Kit-Virtual Nano-Lab. The equivalent energy gaps in the minority-spin of Co2VZ (Z= Al, Bi, Ga, Ge) with WIEN2k code, which displays 100% spin polarization, are 0.703, 0.384, 0.186, and 0.67 eV near to the Fermi level. Furthermore, it is discovered that these compounds are absolutely half-metallic ferromagnetic (HMF). With the exception of Co2VBi, which exhibits metallic properties, the aforementioned compounds exhibit 0.525, 0.0, 0.553, and 0.786 eV band gaps in the ATK-VNL code and indicate 100% spin polarization. The magnetic moments of the compounds Co2VZ (Z= Al, Bi, Ga, Ge) are found to be 2.976, 4.003, 1.989, and 3.001 µB, respectively, in the WIEN2k code. The relative magnetic moments of the aforementioned compounds are also 1.991, 3.947, 1.999, and 2.997 µB, according to the ATK-VNL code.
{"title":"Theoretical investigation of fundamental physical properties of full-Heusler Co2VZ (Z= Al, Bi, Ga, Ge) compounds","authors":"S. Mahla, R. Agrawal, S. Kumar, P. Singh, M. Lal, S. Singh, A. Verma","doi":"10.15251/cl.2023.207.535","DOIUrl":"https://doi.org/10.15251/cl.2023.207.535","url":null,"abstract":"A subclass of ternary intermetallic known as Heusler compounds is being employed in the steel industry to increase material strength. This study examines the structural, electrical, optical, and magnetic properties of Co2VZ (Z=Al, Bi, Ge, Si) compounds using two different methods. First is full potential linearized augmented plane wave (FP-LAPW) method by WIEN2k and second is pseudo potential method by Atomic Tool Kit-Virtual Nano-Lab. The equivalent energy gaps in the minority-spin of Co2VZ (Z= Al, Bi, Ga, Ge) with WIEN2k code, which displays 100% spin polarization, are 0.703, 0.384, 0.186, and 0.67 eV near to the Fermi level. Furthermore, it is discovered that these compounds are absolutely half-metallic ferromagnetic (HMF). With the exception of Co2VBi, which exhibits metallic properties, the aforementioned compounds exhibit 0.525, 0.0, 0.553, and 0.786 eV band gaps in the ATK-VNL code and indicate 100% spin polarization. The magnetic moments of the compounds Co2VZ (Z= Al, Bi, Ga, Ge) are found to be 2.976, 4.003, 1.989, and 3.001 µB, respectively, in the WIEN2k code. The relative magnetic moments of the aforementioned compounds are also 1.991, 3.947, 1.999, and 2.997 µB, according to the ATK-VNL code.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"1 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67024963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.15251/cl.2023.207.507
Z. Zhang, Y. Sun, Z. Yang, T. Wei, J. Wu, X. S. Wang, R. Wang
We investigated photo-induced effects in Ge-Ga-Se films. It was found that, thermal annealing causes the increase of the bandgap in the as-prepared films, and all three annealed films show photodarkening (PD) behavior with light illumination but the change of optical bandgap is minimum in Ge25 film. Such PD behavior can be recovered by reannealing of the film. The kinetic process of Tf/Ti exhibits part recovering of PD during the cycle of laser on and off. Moreover, no obvious structural change can be observed in the Raman spectra of the films at different states, especially in that of Ge25 film.
{"title":"Photo-induced effects in Ge-Ga-Se films","authors":"Z. Zhang, Y. Sun, Z. Yang, T. Wei, J. Wu, X. S. Wang, R. Wang","doi":"10.15251/cl.2023.207.507","DOIUrl":"https://doi.org/10.15251/cl.2023.207.507","url":null,"abstract":"We investigated photo-induced effects in Ge-Ga-Se films. It was found that, thermal annealing causes the increase of the bandgap in the as-prepared films, and all three annealed films show photodarkening (PD) behavior with light illumination but the change of optical bandgap is minimum in Ge25 film. Such PD behavior can be recovered by reannealing of the film. The kinetic process of Tf/Ti exhibits part recovering of PD during the cycle of laser on and off. Moreover, no obvious structural change can be observed in the Raman spectra of the films at different states, especially in that of Ge25 film.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"64 1","pages":""},"PeriodicalIF":1.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"67025063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.15251/cl.2022.1912.909
V. Karabyn, J. Mіstrіk, Y. Tveryanovіch, P. Bezdіcka, D. Hіmіcs, B. Frumarova, P. Knotek, T. Wagner
The phase transformatіon amorphous to crystallіne of thіn fіlms Ge8Sb2-xBіxTe11 system (where x = 0; 1; 2) deposіted by the Flash Thermal Evaporatіon (FE). Phase transformatіon were іnduced by ultra-fast (40 fs) femtosecond sіngle laser pulse іrradіatіon, and were compared іn structure, optіcal propertіes and topography. The obtaіned results demonstrate, that sіngle fs pulse laser іrradіatіon appears to be effectіve іn іnducіng crystallіzatіon of Ge8Sb2-xBіxTe11 thіn fіlms and enablіng the attaіnment of a hіgher speed data set/reset. The substіtutіon of bіsmuth for antіmony leads to a change іn optіcal, electrіcal and thermal propertіes dependіng on the Bі concentratіon for the studіed materіals. The hіgh optіcal contrast makes the studіed Ge8Sb2-xBіxTe11 samples promіsіng for PRAM memorіes.
{"title":"Phase-change transіtіon of chalcogenіde system Ge8Sb2-xBіxTe11 thіn fіlm usіng sіngle femtosecond laser pulses","authors":"V. Karabyn, J. Mіstrіk, Y. Tveryanovіch, P. Bezdіcka, D. Hіmіcs, B. Frumarova, P. Knotek, T. Wagner","doi":"10.15251/cl.2022.1912.909","DOIUrl":"https://doi.org/10.15251/cl.2022.1912.909","url":null,"abstract":"The phase transformatіon amorphous to crystallіne of thіn fіlms Ge8Sb2-xBіxTe11 system (where x = 0; 1; 2) deposіted by the Flash Thermal Evaporatіon (FE). Phase transformatіon were іnduced by ultra-fast (40 fs) femtosecond sіngle laser pulse іrradіatіon, and were compared іn structure, optіcal propertіes and topography. The obtaіned results demonstrate, that sіngle fs pulse laser іrradіatіon appears to be effectіve іn іnducіng crystallіzatіon of Ge8Sb2-xBіxTe11 thіn fіlms and enablіng the attaіnment of a hіgher speed data set/reset. The substіtutіon of bіsmuth for antіmony leads to a change іn optіcal, electrіcal and thermal propertіes dependіng on the Bі concentratіon for the studіed materіals. The hіgh optіcal contrast makes the studіed Ge8Sb2-xBіxTe11 samples promіsіng for PRAM memorіes.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46155611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.15251/cl.2022.1912.891
Y. Hordieiev, A. Zaichuk
The structure, thermal and some physical properties of lead fluoroborate glasses containing 30 mol% SiO2 have been investigated by differential thermal analysis, X-ray diffraction and Fourier-transform infrared spectroscopy. The glasses were prepared by the conventional melt-quenching method. Fourier-transform infrared spectroscopy results showed that the network of these glasses consists mainly of BO3, BO4, SiO4, and PbO4 structural units. The thermal stability of the glass samples determined by differential thermal analysis was found to be about 80°C. Dilatometric measurements showed that the glass transition temperature and dilatometric softening temperature decrease with increasing lead content, whereas the coefficient of thermal expansion increases. The density and molar volume increased with the increase in lead content. The conductivity of the investigated glasses mainly depends on the mobility of F– and Pb2+ ions. The variation in volume resistance upon changing the composition has been correlated with the structural changes in the glass network. The results obtained in this study indicate that the investigated glasses can be potential candidates for advanced technologies as solder and sealing materials.
{"title":"Synthesis, structure and properties of PbO–PbF2–B2O3–SiO2 glasses","authors":"Y. Hordieiev, A. Zaichuk","doi":"10.15251/cl.2022.1912.891","DOIUrl":"https://doi.org/10.15251/cl.2022.1912.891","url":null,"abstract":"The structure, thermal and some physical properties of lead fluoroborate glasses containing 30 mol% SiO2 have been investigated by differential thermal analysis, X-ray diffraction and Fourier-transform infrared spectroscopy. The glasses were prepared by the conventional melt-quenching method. Fourier-transform infrared spectroscopy results showed that the network of these glasses consists mainly of BO3, BO4, SiO4, and PbO4 structural units. The thermal stability of the glass samples determined by differential thermal analysis was found to be about 80°C. Dilatometric measurements showed that the glass transition temperature and dilatometric softening temperature decrease with increasing lead content, whereas the coefficient of thermal expansion increases. The density and molar volume increased with the increase in lead content. The conductivity of the investigated glasses mainly depends on the mobility of F– and Pb2+ ions. The variation in volume resistance upon changing the composition has been correlated with the structural changes in the glass network. The results obtained in this study indicate that the investigated glasses can be potential candidates for advanced technologies as solder and sealing materials.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41313390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.15251/cl.2022.1912.939
M. Ezzeldien, M. A. Salamab, M. Hasaneen, A. A. El-Maaref, M. M. Soraya, N. Shaalan, Z. Alrowaili, M. Ahmad
Phy-X/PSD online program is used to obtain various radiation shielding indices in a photon energy region located between 0.15 and 15 MeV for Ge25-As10-Te65-x-Pbx (x = 2, 4, 6, 8, 10 at %) chalcogenide glasses. The linear attenuation coefficient LAC, mass attenuation coefficients MAC, effective atomic number Zeff, effective electron density Neff, half-value layer, HVL, tenth value layer TVL, mean free path MEF, energy absorption and exposure buildup factors (EABF, EBF), and fast neutron cross section FNRCS have been introduced. The findings conclude that the LAC and MAC measurements are greater and therefore better than commercial and traditional glasses. Also, it was found that HVL, TVL, and MFP were reduced with the addition of Pb to the tested glasses, which improve the shielding characteristics. Zeff and Neff of the compositions under study were varied as (42.58- 59.75) and (2.36-3.09 x 1023 electrons/g) respectively. A reduction was noticed in EBF and EABF values with the increment of Pb concentration in the investigated glasses at the entire photon energies, at all values of MFP that emphasize the enhancement of shielding properties of these glasses with the addition of lead. FNRCS were found to be changed between 0.87 and 0.095 Cm-1 as Pb content varies from 0.0 to 0.01 respectively that let these glasses
{"title":"Multicomponent Ge-As-Te-Pb chalcogenide glasses for radiations shielding applications","authors":"M. Ezzeldien, M. A. Salamab, M. Hasaneen, A. A. El-Maaref, M. M. Soraya, N. Shaalan, Z. Alrowaili, M. Ahmad","doi":"10.15251/cl.2022.1912.939","DOIUrl":"https://doi.org/10.15251/cl.2022.1912.939","url":null,"abstract":"Phy-X/PSD online program is used to obtain various radiation shielding indices in a photon energy region located between 0.15 and 15 MeV for Ge25-As10-Te65-x-Pbx (x = 2, 4, 6, 8, 10 at %) chalcogenide glasses. The linear attenuation coefficient LAC, mass attenuation coefficients MAC, effective atomic number Zeff, effective electron density Neff, half-value layer, HVL, tenth value layer TVL, mean free path MEF, energy absorption and exposure buildup factors (EABF, EBF), and fast neutron cross section FNRCS have been introduced. The findings conclude that the LAC and MAC measurements are greater and therefore better than commercial and traditional glasses. Also, it was found that HVL, TVL, and MFP were reduced with the addition of Pb to the tested glasses, which improve the shielding characteristics. Zeff and Neff of the compositions under study were varied as (42.58- 59.75) and (2.36-3.09 x 1023 electrons/g) respectively. A reduction was noticed in EBF and EABF values with the increment of Pb concentration in the investigated glasses at the entire photon energies, at all values of MFP that emphasize the enhancement of shielding properties of these glasses with the addition of lead. FNRCS were found to be changed between 0.87 and 0.095 Cm-1 as Pb content varies from 0.0 to 0.01 respectively that let these glasses","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41318335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-21DOI: 10.15251/cl.2022.1912.965
X. Y. Zhang, J. Liu, Y. He, Z. Liu, A. Wei
Two-dimensional ReSe2 as catalyst for hydrogen evolution reaction (HER) has attracted attention due to its unique 1T′ structure and anisotropic physical properties in base planes. In this work, ReSe2 nanosheets were directly prepared on a carbon cloth (CC) substrate by hydrothermal synthesis technology. The reaction solution was prepared using ammonium perrhenium (NH4ReO4), sodium borohydride (NaBH4), selenium (Se) powder and deionized water. The effects of reactant concentrations and reaction time on the catalytic properties of the ReSe2 /CC for HER were researched. When the concentration of NH4ReO4, Se and NaBH4 is 0.05 M, 0.065 M and 0.200 M, ReSe2/CC shows the optimal HER catalytic properties with overpotential of 197 mV at current density of 10mAcm-2 , Tafel slope of 142 mVdec-1 and ECSA of 325cm2 . The formation mechanism and working mechanism in the HER process of ReSe2/CC are discussed.
{"title":"Synthesis and electrocatalytic performance for hydrogen evolution reaction of ReSe2 nanosheets","authors":"X. Y. Zhang, J. Liu, Y. He, Z. Liu, A. Wei","doi":"10.15251/cl.2022.1912.965","DOIUrl":"https://doi.org/10.15251/cl.2022.1912.965","url":null,"abstract":"Two-dimensional ReSe2 as catalyst for hydrogen evolution reaction (HER) has attracted attention due to its unique 1T′ structure and anisotropic physical properties in base planes. In this work, ReSe2 nanosheets were directly prepared on a carbon cloth (CC) substrate by hydrothermal synthesis technology. The reaction solution was prepared using ammonium perrhenium (NH4ReO4), sodium borohydride (NaBH4), selenium (Se) powder and deionized water. The effects of reactant concentrations and reaction time on the catalytic properties of the ReSe2 /CC for HER were researched. When the concentration of NH4ReO4, Se and NaBH4 is 0.05 M, 0.065 M and 0.200 M, ReSe2/CC shows the optimal HER catalytic properties with overpotential of 197 mV at current density of 10mAcm-2 , Tafel slope of 142 mVdec-1 and ECSA of 325cm2 . The formation mechanism and working mechanism in the HER process of ReSe2/CC are discussed.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":" ","pages":""},"PeriodicalIF":1.0,"publicationDate":"2022-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46307783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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