The degree of crosslinking in encapsulants is a critical parameter in photovoltaic (PV) module production, significantly influencing module performance and reliability. Despite its importance, the industry-standard Soxhlet extraction method for assessing crosslinking is offline, time-intensive, and unsuitable to implement for real-time process monitoring. This study explores the application of near-infrared (NIR) spectroscopy as a faster, nondestructive alternative for determining encapsulant crosslinking. Test laminates using an ethylene vinyl acetate (EVA) encapsulant with varying crosslinking times were analyzed using both Soxhlet extraction and NIR spectroscopy. The NIR spectra were processed using multivariate data analysis methods for qualitative classification and quantitative prediction. The classification model demonstrated clear separation between encapsulants with high and low degrees of crosslinking. The prediction model achieved a high accuracy prediction of the degree of crosslinking. These findings highlight the potential of NIR spectroscopy for rapid, inline classification and quantification of encapsulant crosslinking. Future work will expand the calibration models to include polyolefin (POE) and co-extruded POE–EVA encapsulants to verify robustness across different chemistries, and optimizing measurement setups to accommodate double-glass module designs.
{"title":"New Rapid Method for Optical Nondestructive Determination of the Degree of Crosslinking of PV Module Encapsulants","authors":"Gernot Oreski;Márton Bredács;Sonja Feldbacher;Petra Christöfl;Jutta Geier;Chiara Barretta;Christian Camus;Enno Malguth;Adrian","doi":"10.1109/JPHOTOV.2025.3635341","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3635341","url":null,"abstract":"The degree of crosslinking in encapsulants is a critical parameter in photovoltaic (PV) module production, significantly influencing module performance and reliability. Despite its importance, the industry-standard Soxhlet extraction method for assessing crosslinking is offline, time-intensive, and unsuitable to implement for real-time process monitoring. This study explores the application of near-infrared (NIR) spectroscopy as a faster, nondestructive alternative for determining encapsulant crosslinking. Test laminates using an ethylene vinyl acetate (EVA) encapsulant with varying crosslinking times were analyzed using both Soxhlet extraction and NIR spectroscopy. The NIR spectra were processed using multivariate data analysis methods for qualitative classification and quantitative prediction. The classification model demonstrated clear separation between encapsulants with high and low degrees of crosslinking. The prediction model achieved a high accuracy prediction of the degree of crosslinking. These findings highlight the potential of NIR spectroscopy for rapid, inline classification and quantification of encapsulant crosslinking. Future work will expand the calibration models to include polyolefin (POE) and co-extruded POE–EVA encapsulants to verify robustness across different chemistries, and optimizing measurement setups to accommodate double-glass module designs.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 1","pages":"33-38"},"PeriodicalIF":2.6,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145802352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-27DOI: 10.1109/JPHOTOV.2025.3633056
Luming Zhou;Yahong Wang;Peng Ye;Junying Yu;Lin He;Chunlin Fu
The thickness of the light-absorbing layer and interface defects are the key factors affecting the photovoltaic performance of perovskite solar cells. In this article, aiming at the problem of carrier recombination caused by the thickness of the light-absorbing layer and interface defects in infrared quantum dot/perovskite composite nanorod arrays, a strategy of synergistically optimizing the thickness of the quantum dot absorption layer and interface passivation performance by adjusting the concentration of PbS-PbI2 quantum dots is proposed. Experimental results indicate that quantum dot concentration significantly influences light-absorbing layer properties. At 40 mg/mL, the absorber layer thickness increases to 27.5 nm, interface defect density decreases, carrier transport efficiency improves, near-infrared light absorption enhances, and optimal photovoltaic performance is achieved (Jsc = 14.72 mA/cm2, PCE = 6.65%). When concentration exceeds 40 mg/mL, quantum dot agglomeration causes absorber thickness to sharply decrease to 20.5 nm, interface defect density increases, and both light absorption efficiency and photovoltaic performance decline (Jsc = 11.58 mA/cm2, PCE = 4.41%). Through XRD, SEM, and EIS characterization, it was found that at a concentration of 40 mg/mL, a moderate thickness of the light-absorbing layer improves the near-infrared light capture ability, effectively passivates the interface defects through the Pb2+-I- coordination bond, and optimizes the perovskite crystal quality and carrier kinetics. This article reveals the regulation of quantum dot concentration on device performance through the synergistic mechanism of “absorber layer thickness and interface defect-light absorption-photovoltaic performance,” which provides guidance for efficient interface engineering of the perovskite/quantum dot composite system.
{"title":"Quantum Dot Concentration-Mediated Synergistic Optimization of Absorber Thickness and Interface Defects in Infrared Quantum Dot/Perovskite Nanorod Array Solar Cells","authors":"Luming Zhou;Yahong Wang;Peng Ye;Junying Yu;Lin He;Chunlin Fu","doi":"10.1109/JPHOTOV.2025.3633056","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3633056","url":null,"abstract":"The thickness of the light-absorbing layer and interface defects are the key factors affecting the photovoltaic performance of perovskite solar cells. In this article, aiming at the problem of carrier recombination caused by the thickness of the light-absorbing layer and interface defects in infrared quantum dot/perovskite composite nanorod arrays, a strategy of synergistically optimizing the thickness of the quantum dot absorption layer and interface passivation performance by adjusting the concentration of PbS-PbI<sub>2</sub> quantum dots is proposed. Experimental results indicate that quantum dot concentration significantly influences light-absorbing layer properties. At 40 mg/mL, the absorber layer thickness increases to 27.5 nm, interface defect density decreases, carrier transport efficiency improves, near-infrared light absorption enhances, and optimal photovoltaic performance is achieved (<italic>J</i><sub>sc</sub> = 14.72 mA/cm<sup>2</sup>, PCE = 6.65%). When concentration exceeds 40 mg/mL, quantum dot agglomeration causes absorber thickness to sharply decrease to 20.5 nm, interface defect density increases, and both light absorption efficiency and photovoltaic performance decline (<italic>J</i><sub>sc</sub> = 11.58 mA/cm<sup>2</sup>, PCE = 4.41%). Through XRD, SEM, and EIS characterization, it was found that at a concentration of 40 mg/mL, a moderate thickness of the light-absorbing layer improves the near-infrared light capture ability, effectively passivates the interface defects through the Pb<sup>2+</sup>-I<sup>-</sup> coordination bond, and optimizes the perovskite crystal quality and carrier kinetics. This article reveals the regulation of quantum dot concentration on device performance through the synergistic mechanism of “absorber layer thickness and interface defect-light absorption-photovoltaic performance,” which provides guidance for efficient interface engineering of the perovskite/quantum dot composite system.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 1","pages":"81-87"},"PeriodicalIF":2.6,"publicationDate":"2025-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145802380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-26DOI: 10.1109/TPS.2025.3635647
Guodong Lu;Yiqin Liu;Weiwen Li
Spoof surface plasmon polariton (SSPP) structures with negative group delay (NGD) have generally been restricted to single-band operation. To overcome this limitation, this work presents a novel SSPP unit that achieves dual-band NGD by simultaneously exhibiting single-negative permittivity and single-negative permeability. The proposed unit provides group delays of −5.5 and −2.4 ns at 1.86 and 2.78 GHz, respectively, representing significantly enhanced compensation capability compared with prior reports. By embedding this NGD unit into a conventional SSPP waveguide, both Gaussian pulses and double-sideband (DSB)-modulated signals are effectively compensated, leading to envelope advancement and reduced propagation delay. The results confirm that the proposed dual-band NGD mechanism broadens the functionalities of SSPP systems and offers strong potential for applications in high-speed communication, synchronous transmission, and real-time sensing.
{"title":"A Novel Spoof Surface Plasmon Polaritons Unit With Dual-Band Negative Group Delay","authors":"Guodong Lu;Yiqin Liu;Weiwen Li","doi":"10.1109/TPS.2025.3635647","DOIUrl":"https://doi.org/10.1109/TPS.2025.3635647","url":null,"abstract":"Spoof surface plasmon polariton (SSPP) structures with negative group delay (NGD) have generally been restricted to single-band operation. To overcome this limitation, this work presents a novel SSPP unit that achieves dual-band NGD by simultaneously exhibiting single-negative permittivity and single-negative permeability. The proposed unit provides group delays of −5.5 and −2.4 ns at 1.86 and 2.78 GHz, respectively, representing significantly enhanced compensation capability compared with prior reports. By embedding this NGD unit into a conventional SSPP waveguide, both Gaussian pulses and double-sideband (DSB)-modulated signals are effectively compensated, leading to envelope advancement and reduced propagation delay. The results confirm that the proposed dual-band NGD mechanism broadens the functionalities of SSPP systems and offers strong potential for applications in high-speed communication, synchronous transmission, and real-time sensing.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"54 1","pages":"228-235"},"PeriodicalIF":1.5,"publicationDate":"2025-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145957874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Negative capacitance FinFET (NC-FinFET) has shown excellent ability in suppressing short channel effect, reducing subthreshold swing (SS) and off-state current. In this paper, a new ferroelectric-width-varied negative capacitance double-gate FinFET (FWV-NC-DG-FinFET) is investigated. A new capacitance model fitted to FWV-NC-DG-FinFET is also established. The model is verified by TCAD simulation of FE/SiO2 interface potential. The influence of ferroelectric width variation and drain voltage VD on the gate-drain coupling is investigated by examining the simulation results of SS, threshold voltage, on-state current and off-state current, and NDR effect. The simulation results show that the FWV-NC-DG-FinFET with lager ferroelectric width at drain side results in severe gate-drain coupling effect and lead to ION/IOFF ratio over 107. In contrast, the FWV-NC-DG-FinFET with lager ferroelectric width at source side leads to slighter gate-drain coupling and is able to achieve SS of 51.9 mV/dec and reduce the increment of SS and threshold voltage with increased drain voltage. Meanwhile, the FWV-NC-DG-FinFET with lager ferroelectric width at source side can also mitigates the NDR effect. Furthermore, this paper presents a feasible method to fabricate such FWV-NC-DG-FinFET.
{"title":"Effect of Ferroelectric Width Variation on Gate-Drain Coupling in Negative Capacitance Double-Gate FinFET","authors":"Jiafei Yao;Jincheng Liu;Yeqin Zhu;Ziwei Hu;Maolin Zhang;Man Li;Kemeng Yang;Jing Chen;Jun Zhang;Yufeng Guo","doi":"10.1109/TNANO.2025.3636943","DOIUrl":"https://doi.org/10.1109/TNANO.2025.3636943","url":null,"abstract":"Negative capacitance FinFET (NC-FinFET) has shown excellent ability in suppressing short channel effect, reducing subthreshold swing (SS) and off-state current. In this paper, a new ferroelectric-width-varied negative capacitance double-gate FinFET (FWV-NC-DG-FinFET) is investigated. A new capacitance model fitted to FWV-NC-DG-FinFET is also established. The model is verified by TCAD simulation of FE/SiO<sub>2</sub> interface potential. The influence of ferroelectric width variation and drain voltage <italic>V</i><sub>D</sub> on the gate-drain coupling is investigated by examining the simulation results of SS, threshold voltage, on-state current and off-state current, and NDR effect. The simulation results show that the FWV-NC-DG-FinFET with lager ferroelectric width at drain side results in severe gate-drain coupling effect and lead to <italic>I</i><sub>ON</sub>/<italic>I</i><sub>OFF</sub> ratio over 10<sup>7</sup>. In contrast, the FWV-NC-DG-FinFET with lager ferroelectric width at source side leads to slighter gate-drain coupling and is able to achieve SS of 51.9 mV/dec and reduce the increment of SS and threshold voltage with increased drain voltage. Meanwhile, the FWV-NC-DG-FinFET with lager ferroelectric width at source side can also mitigates the NDR effect. Furthermore, this paper presents a feasible method to fabricate such FWV-NC-DG-FinFET.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"585-592"},"PeriodicalIF":2.1,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145830828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/TSM.2025.3636948
Shih-Cheng Hu;Tee Lin;Omid Ali Zargar;Yi-Chang Lin;Yang-Cheng Shih;Graham Leggett
With rapid advancements in technology, Taiwan has become a global leader in semiconductor manufacturing. Over the past decade, process technologies have continually advanced, reaching the latest 1.2 nm node. However, as feature sizes shrink, the complexity of processes increases, leading to more stringent requirements for the stability of the manufacturing environment. Cleanroom environments have become increasingly critical in semiconductor manufacturing, significantly impacting production capacity and yield. In the equipment front-end module (EFEM), we observed that when the front opening unified pod (FOUP) door is opened, internal pressure differentials can cause air ingress into the microenvironment. This ingested air may carry moisture and oxygen, which, upon entering the FOUP, can damage the wafers, leading to decreased yield. In real-world scenarios, we found that despite the use of laminar air curtain devices, wafer box yields remained unstable due to the influence of inclined airflow. To simulate this situation, our experiment utilized flow field visualization to observe the effects of different air curtain flow rates (0.3 m/s,0.4 m/s and 0.5 m/s) and environmental wind speeds (0.3 m/s and 0.5 m/s) on inclined airflows (7°, 15°, and 30°) when the FOUP door is opened. While flow field visualization provided clear images of airflow directions, it could not determine whether the ingested air contained contaminants harmful to the wafers. Therefore, we supplemented our experiment with relative humidity monitoring data to identify whether the ingested air originated from the external environment or the air curtain device itself, providing effective recommendations based on the findings.
{"title":"Analyzing the Impact of Inclined Airflow Within the EFEM on the Lateral Flow Around the FOUP Using Flow Visualization Techniques","authors":"Shih-Cheng Hu;Tee Lin;Omid Ali Zargar;Yi-Chang Lin;Yang-Cheng Shih;Graham Leggett","doi":"10.1109/TSM.2025.3636948","DOIUrl":"https://doi.org/10.1109/TSM.2025.3636948","url":null,"abstract":"With rapid advancements in technology, Taiwan has become a global leader in semiconductor manufacturing. Over the past decade, process technologies have continually advanced, reaching the latest 1.2 nm node. However, as feature sizes shrink, the complexity of processes increases, leading to more stringent requirements for the stability of the manufacturing environment. Cleanroom environments have become increasingly critical in semiconductor manufacturing, significantly impacting production capacity and yield. In the equipment front-end module (EFEM), we observed that when the front opening unified pod (FOUP) door is opened, internal pressure differentials can cause air ingress into the microenvironment. This ingested air may carry moisture and oxygen, which, upon entering the FOUP, can damage the wafers, leading to decreased yield. In real-world scenarios, we found that despite the use of laminar air curtain devices, wafer box yields remained unstable due to the influence of inclined airflow. To simulate this situation, our experiment utilized flow field visualization to observe the effects of different air curtain flow rates (0.3 m/s,0.4 m/s and 0.5 m/s) and environmental wind speeds (0.3 m/s and 0.5 m/s) on inclined airflows (7°, 15°, and 30°) when the FOUP door is opened. While flow field visualization provided clear images of airflow directions, it could not determine whether the ingested air contained contaminants harmful to the wafers. Therefore, we supplemented our experiment with relative humidity monitoring data to identify whether the ingested air originated from the external environment or the air curtain device itself, providing effective recommendations based on the findings.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"39 1","pages":"53-61"},"PeriodicalIF":2.3,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/TPS.2025.3629331
Pengchao Pei;Kai Huang;Bin Cao;Xia Ge
In engineering, a “D-shaped” armature-rail contact method is used in rail-gun devices between a solid armature and rail. The sliding electrical contact performance between armature-rail is closely related to the state of the contact surfaces. In order to address the problem of uneven contact surface erosion caused by the contact method, based on the type of “D-shaped” between armature-rail, different armature structures were designed to adjust the shape of the rail. The static contact calculation model was established; by this means, the effective contact surface area under different fit forms was obtained based on the “1-g/A” rule, then the thermal power value of the contact surface was calculated accordingly, and the contact state under non-launch conditions was verified by conducting friction and wear tests. In the end, by constraining the armature displacement and applying current, the ablation condition of current within the contact surface was simulated statically. The experimental results showed that the ablation degree of the contact surface was significantly reduced when using the conical interference fit method. The research results indicate that the conical interference contact method is adopted for the contact surface between armature-rail, compared with traditional cylindrical contact method, the pressure distribution gradient on contact surface area can be significantly reduced, and the degree of erosion is more uniform, compared to traditional armature, the effective flow area has increased by 33.9%, and compared to cylindrical interference methods, it has increased by 7.1%, the growth of effective contact area significantly reduces the ablation degree of contact surface, making it a more ideal contact method. This not only ensures sufficient contact area but also effectively reduces the degree of erosion on the armature surface, making the conical interference method an ideal way to improve the state of contact. Through this study, the aim is to provide a new technological route for the coordination between armature-rail and to propose a new armature design method that is conducive to promoting the engineering application of electromagnetic rail launch devices.
{"title":"Research on the Contact Method Between Armature-Rail for Railgun Based on Heat Flow Distribution","authors":"Pengchao Pei;Kai Huang;Bin Cao;Xia Ge","doi":"10.1109/TPS.2025.3629331","DOIUrl":"https://doi.org/10.1109/TPS.2025.3629331","url":null,"abstract":"In engineering, a “D-shaped” armature-rail contact method is used in rail-gun devices between a solid armature and rail. The sliding electrical contact performance between armature-rail is closely related to the state of the contact surfaces. In order to address the problem of uneven contact surface erosion caused by the contact method, based on the type of “D-shaped” between armature-rail, different armature structures were designed to adjust the shape of the rail. The static contact calculation model was established; by this means, the effective contact surface area under different fit forms was obtained based on the “1-g/A” rule, then the thermal power value of the contact surface was calculated accordingly, and the contact state under non-launch conditions was verified by conducting friction and wear tests. In the end, by constraining the armature displacement and applying current, the ablation condition of current within the contact surface was simulated statically. The experimental results showed that the ablation degree of the contact surface was significantly reduced when using the conical interference fit method. The research results indicate that the conical interference contact method is adopted for the contact surface between armature-rail, compared with traditional cylindrical contact method, the pressure distribution gradient on contact surface area can be significantly reduced, and the degree of erosion is more uniform, compared to traditional armature, the effective flow area has increased by 33.9%, and compared to cylindrical interference methods, it has increased by 7.1%, the growth of effective contact area significantly reduces the ablation degree of contact surface, making it a more ideal contact method. This not only ensures sufficient contact area but also effectively reduces the degree of erosion on the armature surface, making the conical interference method an ideal way to improve the state of contact. Through this study, the aim is to provide a new technological route for the coordination between armature-rail and to propose a new armature design method that is conducive to promoting the engineering application of electromagnetic rail launch devices.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 12","pages":"3956-3962"},"PeriodicalIF":1.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145754232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/TPS.2025.3635125
Zhizhen Liu;Xinjie Yu;Zhen Li;Bei Li
In the research of pulsed power supplies (PPSs) for electromagnetic launch (EML), it is of great significance to improve the energy density and waveform modulation capability. This article proposes an asynchronous multimodule coupled inductive PPS (IPPS) system and a rapid analysis method for it, which has a higher energy density than that of the planar IPPS system, and meanwhile, it has a more flexible spatial structure and sufficient waveform modulation capabilities. In view of the high complexity of the system circuit, the symmetric equivalent method (SEM) is proposed. By combining it with the homogeneous circuit order reduction method (HCORM), the solution of the multimodule circuit is simplified into the solutions of multiple low-order circuits, which greatly improves the calculation speed. An example is selected, and the system and method are verified by MATLAB/Simulink simulation. The calculation speed of this method is about 27.9 times that of the simulation, and the root-mean-squared error (RMSE) is extremely small. Besides, its energy density can be 106.8% higher than that of the planar system. This research provides theoretical support and methodological references for the future optimized design, operation, and practical application of IPPS systems.
{"title":"Asynchronous Multimodule Coupled IPPS System and Rapid Calculation Method","authors":"Zhizhen Liu;Xinjie Yu;Zhen Li;Bei Li","doi":"10.1109/TPS.2025.3635125","DOIUrl":"https://doi.org/10.1109/TPS.2025.3635125","url":null,"abstract":"In the research of pulsed power supplies (PPSs) for electromagnetic launch (EML), it is of great significance to improve the energy density and waveform modulation capability. This article proposes an asynchronous multimodule coupled inductive PPS (IPPS) system and a rapid analysis method for it, which has a higher energy density than that of the planar IPPS system, and meanwhile, it has a more flexible spatial structure and sufficient waveform modulation capabilities. In view of the high complexity of the system circuit, the symmetric equivalent method (SEM) is proposed. By combining it with the homogeneous circuit order reduction method (HCORM), the solution of the multimodule circuit is simplified into the solutions of multiple low-order circuits, which greatly improves the calculation speed. An example is selected, and the system and method are verified by MATLAB/Simulink simulation. The calculation speed of this method is about 27.9 times that of the simulation, and the root-mean-squared error (RMSE) is extremely small. Besides, its energy density can be 106.8% higher than that of the planar system. This research provides theoretical support and methodological references for the future optimized design, operation, and practical application of IPPS systems.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 12","pages":"3963-3973"},"PeriodicalIF":1.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145754231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-25DOI: 10.1109/TPS.2025.3632754
Hamza Ben Krid;Hamza Wertani;Aymen Hlali;Hassen Zairi
This work introduces a high-sensitivity graphene-based terahertz biosensor optimized using a support vector machine (SVM) approach for accurate cervical cancer diagnosis. The proposed structure demonstrates strong reconfigurability, with the resonance frequency shifting from 4.84 THz at $mu _{c} = 0~text {eV}$ to 5.03 THz at $mu _{c} = 0.5~text {eV}$ , confirming the efficient tunability enabled by graphene’s chemical potential. Sensitivity analysis reveals distinct responses for representative biomarkers, yielding 57.6, 76.9, 100.3, and 116.9 (GHz/RIU), respectively. To enhance predictive reliability, a SVM regression model was implemented, achieving an excellent coefficient of determination of $R^{2} =0.978$ . After optimization, the predicted sensitivities improved to 93, 129.2, 171.4, and 231.6 (GHz/RIU), demonstrating the model’s capacity to accurately capture nonlinear dependencies between chemical potential, temperature, and relaxation time. These results confirm that modulation of graphene’s electronic properties plays a decisive role in resonance control and sensitivity enhancement, establishing a compact, label free, and machine-learning-assisted platform for early detection of cervical cancer.
{"title":"High-Sensitivity Graphene-Based Terahertz Biosensor for Cervical Cancer Diagnosis: SVM-Assisted Optimization","authors":"Hamza Ben Krid;Hamza Wertani;Aymen Hlali;Hassen Zairi","doi":"10.1109/TPS.2025.3632754","DOIUrl":"https://doi.org/10.1109/TPS.2025.3632754","url":null,"abstract":"This work introduces a high-sensitivity graphene-based terahertz biosensor optimized using a support vector machine (SVM) approach for accurate cervical cancer diagnosis. The proposed structure demonstrates strong reconfigurability, with the resonance frequency shifting from 4.84 THz at <inline-formula> <tex-math>$mu _{c} = 0~text {eV}$ </tex-math></inline-formula> to 5.03 THz at <inline-formula> <tex-math>$mu _{c} = 0.5~text {eV}$ </tex-math></inline-formula>, confirming the efficient tunability enabled by graphene’s chemical potential. Sensitivity analysis reveals distinct responses for representative biomarkers, yielding 57.6, 76.9, 100.3, and 116.9 (GHz/RIU), respectively. To enhance predictive reliability, a SVM regression model was implemented, achieving an excellent coefficient of determination of <inline-formula> <tex-math>$R^{2} =0.978$ </tex-math></inline-formula>. After optimization, the predicted sensitivities improved to 93, 129.2, 171.4, and 231.6 (GHz/RIU), demonstrating the model’s capacity to accurately capture nonlinear dependencies between chemical potential, temperature, and relaxation time. These results confirm that modulation of graphene’s electronic properties plays a decisive role in resonance control and sensitivity enhancement, establishing a compact, label free, and machine-learning-assisted platform for early detection of cervical cancer.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 12","pages":"4000-4008"},"PeriodicalIF":1.5,"publicationDate":"2025-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145754228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1109/JPHOTOV.2025.3622321
Zachary B. Leuty;William J. Weigand;Jorge Ochoa;Joe V. Carpenter;Mariana I. Bertoni;Zachary C. Holman
Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiOx/poly-Si(n) structure with an implied open-circuit voltage (iVoc = 726 mV) and contact saturation current density (J0 = 8.8 fA/cm2). Furthermore, annealing AIDA SiOx films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO2, improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.
{"title":"High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts","authors":"Zachary B. Leuty;William J. Weigand;Jorge Ochoa;Joe V. Carpenter;Mariana I. Bertoni;Zachary C. Holman","doi":"10.1109/JPHOTOV.2025.3622321","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3622321","url":null,"abstract":"Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO<sub>x</sub>/poly-Si(n) structure with an implied open-circuit voltage (iV<sub>oc</sub> = 726 mV) and contact saturation current density (J<sub>0</sub> = 8.8 fA/cm<sup>2</sup>). Furthermore, annealing AIDA SiO<sub>x</sub> films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO<sub>2</sub>, improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 1","pages":"69-74"},"PeriodicalIF":2.6,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145802370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-21DOI: 10.1109/TPS.2025.3627946
Hongwei Zhang;Hongbin Pu;Shuxin Zhang
The dc bias voltage ($U_{0}$ ) plays a crucial role in the operation of superfast ionization thyristor (SIT). However, there is limited literature exploring the underlying mechanism and the influence of $U_{0}$ on SIT performances. The silicon-based SIT (Si SIT) has traditionally dominated both theoretical and experimental research in this field, and the emergence of wide bandgaps (WBGs) materials, such as silicon carbide (SiC), has opened up an entirely new domain for SIT research. In this article, the influence of $U_{0}$ on switching characteristics of ultrahigh-voltage (UHV) silicon carbide (SiC) SIT was investigated by numerical simulation. The device under the study features a traditional SiC asymmetrical thyristor structure with a breakdown voltage ($U_{text {vb}}$ ) of 13.27 kV. To ensure triggering of the UHV SiC SIT at a lower $U_{0}$ , an external pulse with a rise time of 20 kV/ns was applied. The results show that the characteristics of the UHV SiC SIT improve as $U_{0}$ increases. Compared to $U_{0}$ of 4 kV, when $U_{0}$ increases to 12 kV, the maximum voltage ($U_{max }$ ) increases by 5.31% and switching time ($T_{text {on}}$ ) and delay time ($T_{text {delay}}$ ) decrease by 72.96% and 76.67%, respectively. These improvements are attributed to the variation in carrier density within the $N^{-}$ long base layer of device, which are influenced by the effects of drift and injection of nonequilibrium carrier.
{"title":"Study on the Influence of DC Bias Voltage on the Characteristics of Ultrahigh-Voltage Silicon Carbide Superfast Ionization Thyristor","authors":"Hongwei Zhang;Hongbin Pu;Shuxin Zhang","doi":"10.1109/TPS.2025.3627946","DOIUrl":"https://doi.org/10.1109/TPS.2025.3627946","url":null,"abstract":"The dc bias voltage (<inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula>) plays a crucial role in the operation of superfast ionization thyristor (SIT). However, there is limited literature exploring the underlying mechanism and the influence of <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula> on SIT performances. The silicon-based SIT (Si SIT) has traditionally dominated both theoretical and experimental research in this field, and the emergence of wide bandgaps (WBGs) materials, such as silicon carbide (SiC), has opened up an entirely new domain for SIT research. In this article, the influence of <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula> on switching characteristics of ultrahigh-voltage (UHV) silicon carbide (SiC) SIT was investigated by numerical simulation. The device under the study features a traditional SiC asymmetrical thyristor structure with a breakdown voltage (<inline-formula> <tex-math>$U_{text {vb}}$ </tex-math></inline-formula>) of 13.27 kV. To ensure triggering of the UHV SiC SIT at a lower <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula>, an external pulse with a rise time of 20 kV/ns was applied. The results show that the characteristics of the UHV SiC SIT improve as <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula> increases. Compared to <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula> of 4 kV, when <inline-formula> <tex-math>$U_{0}$ </tex-math></inline-formula> increases to 12 kV, the maximum voltage (<inline-formula> <tex-math>$U_{max }$ </tex-math></inline-formula>) increases by 5.31% and switching time (<inline-formula> <tex-math>$T_{text {on}}$ </tex-math></inline-formula>) and delay time (<inline-formula> <tex-math>$T_{text {delay}}$ </tex-math></inline-formula>) decrease by 72.96% and 76.67%, respectively. These improvements are attributed to the variation in carrier density within the <inline-formula> <tex-math>$N^{-}$ </tex-math></inline-formula> long base layer of device, which are influenced by the effects of drift and injection of nonequilibrium carrier.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"53 12","pages":"3858-3864"},"PeriodicalIF":1.5,"publicationDate":"2025-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145754242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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