Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00121-5
Amish G. Joshi, M.V. Subbarao, Shah Nikesh A, D.G. Kuberkar, R.G. Kulkarni
The structural and superconducting properties of (Gd1−yCay)Ba2(Cu1−xMox)3Oz samples are investigated using X-ray diffraction, A.C. susceptibility, electrical resistivity and oxygen content measurements. The effect of increasing the Mo concentration in GdBa2(Cu1−xMox)3Oz changes the structure from orthorhombic to tetragonal, accompanied by an increase in the normal state resistivity and decreases both the oxygen content and Tc, which is attributed to hole filling by Mo. This suppression in Tc has been compensated for by appropriate hole doping with Ca, for instance in the oxide (Gd1−yCay)Ba2(Cu0.92Mo0.08)3Oz, the Tc increases from 27 K (y=0.0) to 86.5 K (y=0.24, compensated oxide), closer to the value of 91 K for pure GdBa2Cu3O7−δ due to the balance between the hole filling by Mo and hole doping by Ca.
采用x射线衍射、交流磁化率、电阻率和氧含量测定等方法研究了(Gd1−yCay)Ba2(Cu1−xMox)3Oz样品的结构和超导性能。在GdBa2(Cu1−xMox)3Oz中,Mo浓度的增加使结构由正交向四边形转变,同时伴随着Mo的空穴填充,使氧含量和Tc含量降低。这种抑制作用可以通过适当的空穴掺杂Ca来补偿,例如在氧化物(Gd1−yCay)Ba2(Cu0.92Mo0.08)3Oz中,Tc从27 K (y=0.0)增加到86.5 K (y=0.24,补偿氧化物)。纯GdBa2Cu3O7−δ接近91 K,这是由于Mo填充空穴和Ca掺杂空穴之间的平衡。
{"title":"Effect of Mo and Mo-Ca substitution on the superconductivity of GdBa2Cu3O7−δ","authors":"Amish G. Joshi, M.V. Subbarao, Shah Nikesh A, D.G. Kuberkar, R.G. Kulkarni","doi":"10.1016/S0964-1807(98)00121-5","DOIUrl":"10.1016/S0964-1807(98)00121-5","url":null,"abstract":"<div><p>The structural and superconducting properties of (Gd<sub>1−<em>y</em></sub>Ca<sub><em>y</em></sub>)Ba<sub>2</sub>(Cu<sub>1−<em>x</em></sub>Mo<sub><em>x</em></sub>)<sub>3</sub>O<sub><em>z</em></sub> samples are investigated using X-ray diffraction, A.C. susceptibility, electrical resistivity and oxygen content measurements. The effect of increasing the Mo concentration in GdBa<sub>2</sub>(Cu<sub>1−<em>x</em></sub>Mo<sub><em>x</em></sub>)<sub>3</sub>O<sub><em>z</em></sub> changes the structure from orthorhombic to tetragonal, accompanied by an increase in the normal state resistivity and decreases both the oxygen content and <em>T</em><sub>c</sub>, which is attributed to hole filling by Mo. This suppression in <em>T</em><sub>c</sub> has been compensated for by appropriate hole doping with Ca, for instance in the oxide (Gd<sub>1−<em>y</em></sub>Ca<sub><em>y</em></sub>)Ba<sub>2</sub>(Cu<sub>0.92</sub>Mo<sub>0.08</sub>)<sub>3</sub>O<sub>z</sub>, the <em>T</em><sub>c</sub> increases from 27<!--> <!-->K (<em>y</em>=0.0) to 86.5<!--> <!-->K (<em>y</em>=0.24, compensated oxide), closer to the value of 91<!--> <!-->K for pure GdBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−<em>δ</em></sub> due to the balance between the hole filling by Mo and hole doping by Ca.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 471-481"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00121-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81664676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00077-5
Z.J Deng , H Zhang , N Yoshikawa , U Ghoshal , E Fang , A Flores , L Zheng , S.R Whiteley , T Van Duzer
The lack of high density memories at 4 K has severely constrained the applications of digital Josephson electronics. Superconductor–semiconductor hybrid technology can take advantage of the high speed of a superconductor processor and the high density of a semiconductor memory and make superconducting electronics applicable. Currently we are developing a hybrid memory system to achieve low power (135 mW) and high speed (128 Gb/s) data access between a 16 GHz 8-bit superconducting rapid single flux quantum (RSFQ) vector processor and a 512 kbit complimentary metal-oxide silicon (CMOS) memory system. In this paper, we give a detailed description of both the high-level system organization and low-level circuit design, as well as simulation and test results for some circuit components of this hybrid RSFQ–CMOS memory-processor interface.
{"title":"Memory-processor interface with hybridCMOS-RSFQ echnology","authors":"Z.J Deng , H Zhang , N Yoshikawa , U Ghoshal , E Fang , A Flores , L Zheng , S.R Whiteley , T Van Duzer","doi":"10.1016/S0964-1807(98)00077-5","DOIUrl":"10.1016/S0964-1807(98)00077-5","url":null,"abstract":"<div><p>The lack of high density memories at 4<!--> <!-->K has severely constrained the applications of digital Josephson electronics. Superconductor–semiconductor hybrid technology can take advantage of the high speed of a superconductor processor and the high density of a semiconductor memory and make superconducting electronics applicable. Currently we are developing a hybrid memory system to achieve low power (135 mW) and high speed (128 Gb/s) data access between a 16 GHz 8-bit superconducting rapid single flux quantum (RSFQ) vector processor and a 512 kbit complimentary metal-oxide silicon (CMOS) memory system. In this paper, we give a detailed description of both the high-level system organization and low-level circuit design, as well as simulation and test results for some circuit components of this hybrid RSFQ–CMOS memory-processor interface.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 355-360"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00077-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76604024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00109-4
S. Menkel, D. Drung , C. Aßmann , T. Schurig
A resistive d.c. SQUID (superconducting quantum interference device), d.c. RSQUID for short, is a superconducting loop that contains two shunted Josephson junctions and a resistor. Our d.c. RSQUIDs are intended for noise thermometry below 4.2K. They are fully integrated thin film devices fabricated in standard Nb technology. The resistor is made from an evaporated silver layer. It is specially designed in order to suppress the proximity effect, and thus the resistor remains normally conductive down to mK temperatures.
For read-out, modified d.c. SQUID electronics are used. It is directly coupled to the d.c. RSQUID and represents a preamplifier with a voltage noise of 0.8 nV/Hz1/2, a gain of 4000, and a bandwidth of 4 MHz.
Due to this large bandwidth, the d.c. RSQUID can be operated at a high frequency enabling a short averaging time for the temperature measurement. At a frequency of 2 MHz and a temperature of 4.2 K we measured the temperature with a statistical uncertainty of 0.8% for 500 s averaging time.
{"title":"A resistive d.c. SQUID noise thermometer","authors":"S. Menkel, D. Drung , C. Aßmann , T. Schurig","doi":"10.1016/S0964-1807(98)00109-4","DOIUrl":"10.1016/S0964-1807(98)00109-4","url":null,"abstract":"<div><p><span><span>A resistive d.c. SQUID (superconducting quantum interference device), d.c. RSQUID for short, is a superconducting loop that contains two shunted Josephson junctions and a </span>resistor. Our d.c. RSQUIDs are intended for noise thermometry below 4.2</span> <span><span>K. They are fully integrated thin film devices fabricated in standard Nb technology. The resistor is made from an evaporated silver layer. It is specially designed in order to suppress the </span>proximity effect, and thus the resistor remains normally conductive down to mK temperatures.</span></p><p><span>For read-out, modified d.c. SQUID electronics are used. It is directly coupled to the d.c. RSQUID and represents a preamplifier<span> with a voltage noise of 0.8 nV/Hz</span></span><sup>1/2</sup>, a gain of 4000, and a bandwidth of 4<!--> <!-->MHz.</p><p>Due to this large bandwidth, the d.c. RSQUID can be operated at a high frequency enabling a short averaging time for the temperature measurement. At a frequency of 2<!--> <!-->MHz and a temperature of 4.2<!--> <!-->K we measured the temperature with a statistical uncertainty of 0.8% for 500<!--> <!-->s averaging time.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 417-422"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00109-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76146525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A Josephson 256 word×16 bit RAM that includes a power circuit has been designed to enable high-frequency clock operation. This RAM consists of a 4×4 matrix array of 256 RAM blocks, impedance matching lines, and input signal amplifiers. A power-supply circuit, composed of a transformer and a Josephson regulator, is included in each 256 RAM block. Fail bit maps for the 256 RAM block were measured, and perfect operation with a 100% bit yield was obtained. The 256 RAM block functioned properly at a high clock frequency of 1 GHz with less than 3 mW of power dissipation from an external power source.
{"title":"1 GHz clock operation of Josephson RAMs","authors":"Shuichi Nagasawa, Hideaki Numata, Yoshihito Hashimoto, Shuichi Tahara","doi":"10.1016/S0964-1807(98)00113-6","DOIUrl":"10.1016/S0964-1807(98)00113-6","url":null,"abstract":"<div><p><span>A Josephson 256 word×16 bit RAM that includes a power circuit has been designed to enable high-frequency clock operation. This RAM consists of a 4×4 matrix array of 256 RAM blocks, impedance matching lines, and input signal amplifiers. A power-supply circuit, composed of a transformer and a Josephson regulator, is included in each 256 RAM block. Fail bit maps for the 256 RAM block were measured, and perfect operation with a 100% bit yield was obtained. The 256 RAM block functioned properly at a high clock frequency of 1 GHz with less than 3 mW of </span>power dissipation<span> from an external power source.</span></p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 445-451"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00113-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77601857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00051-9
M. Schilling
Integrated magnetometers based on superconducting quantum interference devices (SQUIDs) are employed for the very sensitive measurement of magnetic flux and magnetic flux density. Today, most superconducting magnetometers made from high-temperature superconductors (HTS) are based on YBa2Cu3O7 and are optimized for a temperature of 77 K. Depending on the application, the size of the magnetometers is restricted. Many applications in the non-destructive evaluation (NDE) of materials allow the use of large chips with up to 5 cm diameter. The need for integrated, multilayer magnetometers arises, when high sensitivity has to be combined with high spatial resolution with areas below 1 cm2. This applies to the sensors in multichannel systems for biomagnetism which have to be adapted to the size of the sources of magnetic signals in the human heart or brain. Here, a survey on the current status of integrated, thin-film YBa2Cu3O7 magnetometers is given.
{"title":"Integrated HTS dc-SQUID magnetometers","authors":"M. Schilling","doi":"10.1016/S0964-1807(98)00051-9","DOIUrl":"10.1016/S0964-1807(98)00051-9","url":null,"abstract":"<div><p><span><span>Integrated magnetometers based on superconducting quantum interference devices (SQUIDs) are employed for the very sensitive measurement of magnetic flux and </span>magnetic flux density. Today, most superconducting magnetometers made from high-temperature superconductors (HTS) are based on YB</span><sub>a2</sub>Cu<sub>3</sub>O<sub>7</sub> and are optimized for a temperature of 77<!--> <!-->K. Depending on the application, the size of the magnetometers is restricted. Many applications in the non-destructive evaluation (NDE) of materials allow the use of large chips with up to 5<!--> <!-->cm diameter. The need for integrated, multilayer magnetometers arises, when high sensitivity has to be combined with high spatial resolution with areas below 1<!--> <!-->cm<sup>2</sup><span>. This applies to the sensors in multichannel systems for biomagnetism which have to be adapted to the size of the sources of magnetic signals in the human heart or brain. Here, a survey on the current status of integrated, thin-film YB</span><sub>a2</sub>Cu<sub>3</sub>O<sub>7</sub> magnetometers is given.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 291-295"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00051-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90977241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00082-9
P Silvestrini , B Ruggiero , C Granata , M Russo , V.G Palmieri
We have measured the switching current distributions out of the zero-voltage state of Josephson junctions in nonstationary conditions, obtained by means of fast sweeping of the current bias (≌100 kHz) resulting in a dI/dt up to 25 A/s. In this way we have analysed the effects of the levels quantization on the escape rate out of the zero voltage state in conditions where the occupancy probability of the energy levels is far from being in equilibrium.
我们测量了非平稳条件下约瑟夫森结零电压状态下的开关电流分布,通过快速扫偏电流(≌100 kHz)获得,dI/dt高达25 a /s。通过这种方法,我们分析了能级量子化对在能级占据概率远未达到平衡的情况下零电压状态逃逸率的影响。
{"title":"Energy levels quantization in Josephson junctions","authors":"P Silvestrini , B Ruggiero , C Granata , M Russo , V.G Palmieri","doi":"10.1016/S0964-1807(98)00082-9","DOIUrl":"10.1016/S0964-1807(98)00082-9","url":null,"abstract":"<div><p><span>We have measured the switching current distributions out of the zero-voltage state of Josephson junctions in nonstationary conditions, obtained by means of fast sweeping of the current bias (≌100 kHz) resulting in a d</span><em>I</em>/d<em>t</em><span> up to 25 A/s. In this way we have analysed the effects of the levels quantization on the escape rate out of the zero voltage state in conditions where the occupancy probability of the energy levels is far from being in equilibrium.</span></p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 379-384"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00082-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88271027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00083-0
Y. Zhang, N. Wolters , X.H. Zeng , J. Schubert , W. Zander , H. Soltner , H.R. Yi , M. Banzet , F. Rüders , A.I. Braginski
We have developed a novel coplanar resonator serving as a tank circuit for rf washer supercenductry quantum interference device (SQUID)s. Two coplanar lines surround flux concentrator washers. The SQUID, 2.5 or 3.5 mm in diameter, is coupled to the concentrator in the flip-chip configuration. In these layouts, the adjustable resonant frequency is up to the GHz-range. With SQUID loops of 10×500 μm2 (SQUID inductance Ls=260 pH), we measured at 77 K white flux noise levels Sφ1/2 of 8.5 μφ0/√Hz. This corresponded to an energy resolution ϵ of 850 h and a field resolution of about 16 fT/√Hz for a concentrator diameter of 13.4 mm.
{"title":"Washer rf SQUID Magnetometers with Coplanar Resonators at 77K","authors":"Y. Zhang, N. Wolters , X.H. Zeng , J. Schubert , W. Zander , H. Soltner , H.R. Yi , M. Banzet , F. Rüders , A.I. Braginski","doi":"10.1016/S0964-1807(98)00083-0","DOIUrl":"10.1016/S0964-1807(98)00083-0","url":null,"abstract":"<div><p>We have developed a novel coplanar resonator serving as a tank circuit for rf washer supercenductry quantum interference device (SQUID)s. Two coplanar lines surround flux concentrator washers. The SQUID, 2.5 or 3.5<!--> <!-->mm in diameter, is coupled to the concentrator in the flip-chip configuration. In these layouts, the adjustable resonant frequency is up to the GHz-range. With SQUID loops of 10×500<!--> <em>μ</em>m<sup>2</sup> (SQUID inductance <em>L</em><sub>s</sub>=260 pH), we measured at 77<!--> <!-->K white flux noise levels <em>S</em><sub><em>φ</em></sub><sup>1/2</sup> of 8.5 <em>μφ</em><sub>0</sub>/√Hz. This corresponded to an energy resolution ϵ of 850<!--> <!-->h and a field resolution of about 16 fT/√Hz for a concentrator diameter of 13.4<!--> <!-->mm.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 385-390"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00083-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00120-3
Yoshinori Uzawa, Zhen Wang, Akira Kawakami
An all-NbN quasi-optical superconductor–insulator–superconductor (SIS) mixer for the terahertz band has been designed and tested. This mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, an NbN twin-slot antenna, and NbN tuning circuits. The size of the NbN/AlN/NbN junction was about 0.5μm in diameter, and the current density was about 30 kA/cm2. The junctions showed good d.c. I–V characteristics, with a high gap voltage of about 5.4 mV and a small sub-gap leakage current. The double side band (DSB) receiver noise temperature, measured by the standard Y-factor method, was about 2700 K at 761 GHz. This value is much higher than the theoretical sensitivity based on the experimental I–V curve calculated using Tucker’s quantum theory of mixing. The difference between experimental and theoretical mixer performance may result from large RF losses in the tuning circuit of NbN fabricated on SiO.
{"title":"Performance of quasi-optical SIS mixer with NbN/AlN/NbN tunnel junctions and NbN tuning circuit at 760 GHz","authors":"Yoshinori Uzawa, Zhen Wang, Akira Kawakami","doi":"10.1016/S0964-1807(98)00120-3","DOIUrl":"10.1016/S0964-1807(98)00120-3","url":null,"abstract":"<div><p><span><span>An all-NbN quasi-optical superconductor–insulator–superconductor (SIS) mixer for the </span>terahertz band has been designed and tested. This mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, an NbN twin-slot antenna, and NbN tuning circuits. The size of the NbN/AlN/NbN junction was about 0.5</span> <em>μ</em>m in diameter, and the current density was about 30 kA/cm<sup>2</sup>. The junctions showed good d.c. <em>I</em>–<em>V</em><span> characteristics, with a high gap voltage of about 5.4</span> <!-->mV and a small sub-gap leakage current. The double side band (DSB) receiver noise temperature, measured by the standard Y-factor method, was about 2700<!--> <!-->K at 761 GHz. This value is much higher than the theoretical sensitivity based on the experimental <em>I</em>–<em>V</em> curve calculated using Tucker’s quantum theory of mixing. The difference between experimental and theoretical mixer performance may result from large RF losses in the tuning circuit of NbN fabricated on SiO.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 465-470"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00120-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87806785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00111-2
U. Frey, M. Basset, K. Üstüner, M. Blumers, Ch. Schwan, J.C. Martinez, H. Adrian
Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The shift of the transition temperature was 1 K/V. The modulation of the I–V characteristics was demonstrated.
{"title":"Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films","authors":"U. Frey, M. Basset, K. Üstüner, M. Blumers, Ch. Schwan, J.C. Martinez, H. Adrian","doi":"10.1016/S0964-1807(98)00111-2","DOIUrl":"10.1016/S0964-1807(98)00111-2","url":null,"abstract":"<div><p><span>Josephson junctions<span> based on thin films of the Bi</span></span><sub>2</sub>Sr<sub>2</sub>Ca<sub>2</sub>Cu<sub>3</sub>O<sub>10+<em>δ</em></sub> compound show <em>I</em><sub>c</sub><em>R</em><sub>n</sub> products compatible with YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−<em>δ</em></sub> samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8+<em>δ</em></sub> compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58<!--> <!-->K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×10<sup>19</sup> cm<sup>−3</sup> for a superconducting sample. The shift of the transition temperature was 1<!--> <!-->K/V. The modulation of the <em>I</em>–<em>V</em> characteristics was demonstrated.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 429-436"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00111-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74364148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-07-01DOI: 10.1016/S0964-1807(98)00112-4
F Lombardi , Z.G Ivanov, P Komissinski , G.M Fischer , P Larsson, T Claeson
We have studied the electrical transport properties of the grain boundaries (GBs) formed at the top and at the bottom edges of YBa2Cu3O7-δ step-edge Josephson junctions, for different values of the step angle α. The step-edge junctions were fabricated on (100) LaAlO3 steps using a tilted Ar ion milling. Due to the shadowing effect of the step, the middle and the bottom part of the step edge junction were contacted by thin stripes. We found that for α≈60° the top GB is responsible for the weak link behaviour of our step-edge junctions. On less steep steps, α≈45°, a series of GBs with weak link properties were found to nucleate along the step profile. We also correlated these results with the different microstructural properties of the GBs formed on steps with different angles.
{"title":"The influence of the top and the bottom grain boundaries on the current transport in YBa2Cu3O7-δ step-edge Josephson junction","authors":"F Lombardi , Z.G Ivanov, P Komissinski , G.M Fischer , P Larsson, T Claeson","doi":"10.1016/S0964-1807(98)00112-4","DOIUrl":"10.1016/S0964-1807(98)00112-4","url":null,"abstract":"<div><p>We have studied the electrical transport properties of the grain boundaries (GBs) formed at the top and at the bottom edges of YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub><span> step-edge Josephson junctions, for different values of the step angle </span><em>α</em>. The step-edge junctions were fabricated on (100) LaAlO<sub>3</sub> steps using a tilted Ar ion milling. Due to the shadowing effect of the step, the middle and the bottom part of the step edge junction were contacted by thin stripes. We found that for <em>α</em>≈60° the top GB is responsible for the weak link behaviour of our step-edge junctions. On less steep steps, <em>α</em>≈45°, a series of GBs with weak link properties were found to nucleate along the step profile. We also correlated these results with the different microstructural properties of the GBs formed on steps with different angles.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 7","pages":"Pages 437-443"},"PeriodicalIF":0.0,"publicationDate":"1998-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00112-4","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82650501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}