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Effect of Mo and Mo-Ca substitution on the superconductivity of GdBa2Cu3O7−δ Mo和Mo- ca取代对GdBa2Cu3O7−δ超导性的影响
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00121-5
Amish G. Joshi, M.V. Subbarao, Shah Nikesh A, D.G. Kuberkar, R.G. Kulkarni

The structural and superconducting properties of (Gd1−yCay)Ba2(Cu1−xMox)3Oz samples are investigated using X-ray diffraction, A.C. susceptibility, electrical resistivity and oxygen content measurements. The effect of increasing the Mo concentration in GdBa2(Cu1−xMox)3Oz changes the structure from orthorhombic to tetragonal, accompanied by an increase in the normal state resistivity and decreases both the oxygen content and Tc, which is attributed to hole filling by Mo. This suppression in Tc has been compensated for by appropriate hole doping with Ca, for instance in the oxide (Gd1−yCay)Ba2(Cu0.92Mo0.08)3Oz, the Tc increases from 27 K (y=0.0) to 86.5 K (y=0.24, compensated oxide), closer to the value of 91 K for pure GdBa2Cu3O7−δ due to the balance between the hole filling by Mo and hole doping by Ca.

采用x射线衍射、交流磁化率、电阻率和氧含量测定等方法研究了(Gd1−yCay)Ba2(Cu1−xMox)3Oz样品的结构和超导性能。在GdBa2(Cu1−xMox)3Oz中,Mo浓度的增加使结构由正交向四边形转变,同时伴随着Mo的空穴填充,使氧含量和Tc含量降低。这种抑制作用可以通过适当的空穴掺杂Ca来补偿,例如在氧化物(Gd1−yCay)Ba2(Cu0.92Mo0.08)3Oz中,Tc从27 K (y=0.0)增加到86.5 K (y=0.24,补偿氧化物)。纯GdBa2Cu3O7−δ接近91 K,这是由于Mo填充空穴和Ca掺杂空穴之间的平衡。
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引用次数: 3
Memory-processor interface with hybridCMOS-RSFQ echnology 采用hybridCMOS-RSFQ技术的内存处理器接口
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00077-5
Z.J Deng , H Zhang , N Yoshikawa , U Ghoshal , E Fang , A Flores , L Zheng , S.R Whiteley , T Van Duzer

The lack of high density memories at 4 K has severely constrained the applications of digital Josephson electronics. Superconductor–semiconductor hybrid technology can take advantage of the high speed of a superconductor processor and the high density of a semiconductor memory and make superconducting electronics applicable. Currently we are developing a hybrid memory system to achieve low power (135 mW) and high speed (128 Gb/s) data access between a 16 GHz 8-bit superconducting rapid single flux quantum (RSFQ) vector processor and a 512 kbit complimentary metal-oxide silicon (CMOS) memory system. In this paper, we give a detailed description of both the high-level system organization and low-level circuit design, as well as simulation and test results for some circuit components of this hybrid RSFQ–CMOS memory-processor interface.

4k高密度存储器的缺乏严重限制了数字约瑟夫森电子学的应用。超导体-半导体混合技术可以利用超导体处理器的高速度和半导体存储器的高密度,使超导电子学成为可能。目前,我们正在开发一种混合存储系统,以实现16 GHz 8位超导快速单通量量子(RSFQ)矢量处理器和512 kbit互补金属氧化物硅(CMOS)存储系统之间的低功耗(135 mW)和高速(128 Gb/s)数据访问。本文详细介绍了RSFQ-CMOS存储处理器混合接口的高级系统组织和低级电路设计,并对部分电路元件进行了仿真和测试。
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引用次数: 0
A resistive d.c. SQUID noise thermometer 电阻直流SQUID噪声温度计
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00109-4
S. Menkel, D. Drung , C. Aßmann , T. Schurig

A resistive d.c. SQUID (superconducting quantum interference device), d.c. RSQUID for short, is a superconducting loop that contains two shunted Josephson junctions and a resistor. Our d.c. RSQUIDs are intended for noise thermometry below 4.2 K. They are fully integrated thin film devices fabricated in standard Nb technology. The resistor is made from an evaporated silver layer. It is specially designed in order to suppress the proximity effect, and thus the resistor remains normally conductive down to mK temperatures.

For read-out, modified d.c. SQUID electronics are used. It is directly coupled to the d.c. RSQUID and represents a preamplifier with a voltage noise of 0.8 nV/Hz1/2, a gain of 4000, and a bandwidth of 4 MHz.

Due to this large bandwidth, the d.c. RSQUID can be operated at a high frequency enabling a short averaging time for the temperature measurement. At a frequency of 2 MHz and a temperature of 4.2 K we measured the temperature with a statistical uncertainty of 0.8% for 500 s averaging time.

电阻式直流量子干涉装置(简称dc RSQUID)是一个超导环路,包含两个分流的约瑟夫森结和一个电阻器。我们的直流rsquid适用于4.2 K以下的噪声测温。它们是采用标准Nb技术制造的完全集成的薄膜器件。电阻器是由蒸发银层制成的。它是为了抑制接近效应而专门设计的,因此电阻在mK温度下保持正常导电性。对于读出,使用改良的直流SQUID电子设备。它直接耦合到直流RSQUID,代表一个电压噪声为0.8 nV/Hz1/2,增益为4000,带宽为4 MHz的前置放大器。由于这个大带宽,直流RSQUID可以在高频率下工作,使得温度测量的平均时间短。在2 MHz的频率和4.2 K的温度下,我们测量了500 s平均时间的温度,统计不确定度为0.8%。
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引用次数: 8
1 GHz clock operation of Josephson RAMs 1 GHz时钟操作的约瑟夫森RAMs
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00113-6
Shuichi Nagasawa, Hideaki Numata, Yoshihito Hashimoto, Shuichi Tahara

A Josephson 256 word×16 bit RAM that includes a power circuit has been designed to enable high-frequency clock operation. This RAM consists of a 4×4 matrix array of 256 RAM blocks, impedance matching lines, and input signal amplifiers. A power-supply circuit, composed of a transformer and a Josephson regulator, is included in each 256 RAM block. Fail bit maps for the 256 RAM block were measured, and perfect operation with a 100% bit yield was obtained. The 256 RAM block functioned properly at a high clock frequency of 1 GHz with less than 3 mW of power dissipation from an external power source.

包含电源电路的约瑟夫逊256 word×16位RAM设计用于实现高频时钟操作。该RAM由256个RAM块的4×4矩阵阵列、阻抗匹配线和输入信号放大器组成。电源电路,由变压器和约瑟夫森稳压器组成,包括在每个256 RAM块中。测量了256 RAM块的故障位映射,并获得了100%比特收率的完美操作。256 RAM块在1ghz的高时钟频率下正常工作,外部电源的功耗小于3mw。
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引用次数: 1
Integrated HTS dc-SQUID magnetometers 集成高温超导dc-SQUID磁力计
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00051-9
M. Schilling

Integrated magnetometers based on superconducting quantum interference devices (SQUIDs) are employed for the very sensitive measurement of magnetic flux and magnetic flux density. Today, most superconducting magnetometers made from high-temperature superconductors (HTS) are based on YBa2Cu3O7 and are optimized for a temperature of 77 K. Depending on the application, the size of the magnetometers is restricted. Many applications in the non-destructive evaluation (NDE) of materials allow the use of large chips with up to 5 cm diameter. The need for integrated, multilayer magnetometers arises, when high sensitivity has to be combined with high spatial resolution with areas below 1 cm2. This applies to the sensors in multichannel systems for biomagnetism which have to be adapted to the size of the sources of magnetic signals in the human heart or brain. Here, a survey on the current status of integrated, thin-film YBa2Cu3O7 magnetometers is given.

基于超导量子干涉器件(squid)的集成磁力计可以非常灵敏地测量磁通量和磁通密度。今天,大多数由高温超导体(HTS)制成的超导磁力计都是基于YBa2Cu3O7,并在77 K的温度下进行了优化。根据应用的不同,磁力计的尺寸受到限制。在材料无损评价(NDE)中的许多应用允许使用直径达5厘米的大型芯片。当高灵敏度与面积小于1平方厘米的高空间分辨率相结合时,就需要集成的多层磁力计。这适用于多通道生物磁学系统中的传感器,这些传感器必须适应人类心脏或大脑中磁信号源的大小。本文综述了集成薄膜YBa2Cu3O7磁强计的研究现状。
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引用次数: 2
Energy levels quantization in Josephson junctions Josephson结的能级量子化
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00082-9
P Silvestrini , B Ruggiero , C Granata , M Russo , V.G Palmieri

We have measured the switching current distributions out of the zero-voltage state of Josephson junctions in nonstationary conditions, obtained by means of fast sweeping of the current bias (≌100 kHz) resulting in a dI/dt up to 25 A/s. In this way we have analysed the effects of the levels quantization on the escape rate out of the zero voltage state in conditions where the occupancy probability of the energy levels is far from being in equilibrium.

我们测量了非平稳条件下约瑟夫森结零电压状态下的开关电流分布,通过快速扫偏电流(≌100 kHz)获得,dI/dt高达25 a /s。通过这种方法,我们分析了能级量子化对在能级占据概率远未达到平衡的情况下零电压状态逃逸率的影响。
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引用次数: 1
Washer rf SQUID Magnetometers with Coplanar Resonators at 77K 77K共面谐振的Washer rf SQUID磁力计
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00083-0
Y. Zhang, N. Wolters , X.H. Zeng , J. Schubert , W. Zander , H. Soltner , H.R. Yi , M. Banzet , F. Rüders , A.I. Braginski

We have developed a novel coplanar resonator serving as a tank circuit for rf washer supercenductry quantum interference device (SQUID)s. Two coplanar lines surround flux concentrator washers. The SQUID, 2.5 or 3.5 mm in diameter, is coupled to the concentrator in the flip-chip configuration. In these layouts, the adjustable resonant frequency is up to the GHz-range. With SQUID loops of 10×500 μm2 (SQUID inductance Ls=260 pH), we measured at 77 K white flux noise levels Sφ1/2 of 8.5 μφ0/√Hz. This corresponded to an energy resolution ϵ of 850 h and a field resolution of about 16 fT/√Hz for a concentrator diameter of 13.4 mm.

我们开发了一种新型共面谐振器,作为射频洗涤器超导量子干涉器件(SQUID)的槽电路。两个共面线环绕在助焊剂集中器垫圈周围。SQUID直径为2.5或3.5 mm,在倒装芯片配置中与浓缩器耦合。在这些布局中,可调谐振频率高达ghz范围。采用10×500 μm2的SQUID回路(SQUID电感Ls=260 pH),在77 K条件下测量了8.5 μφ0/√Hz的Sφ1/2的白磁通噪声。这对应于能量分辨率为850 h,对于直径为13.4 mm的集中器,场分辨率约为16 fT/√Hz。
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引用次数: 30
Performance of quasi-optical SIS mixer with NbN/AlN/NbN tunnel junctions and NbN tuning circuit at 760 GHz 760 GHz下NbN/AlN/NbN隧道结和NbN调谐电路的准光SIS混频器性能
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00120-3
Yoshinori Uzawa, Zhen Wang, Akira Kawakami

An all-NbN quasi-optical superconductor–insulator–superconductor (SIS) mixer for the terahertz band has been designed and tested. This mixer consists of a MgO hyperhemispherical lens with anti-reflection cap, an NbN twin-slot antenna, and NbN tuning circuits. The size of the NbN/AlN/NbN junction was about 0.5 μm in diameter, and the current density was about 30 kA/cm2. The junctions showed good d.c. IV characteristics, with a high gap voltage of about 5.4 mV and a small sub-gap leakage current. The double side band (DSB) receiver noise temperature, measured by the standard Y-factor method, was about 2700 K at 761 GHz. This value is much higher than the theoretical sensitivity based on the experimental IV curve calculated using Tucker’s quantum theory of mixing. The difference between experimental and theoretical mixer performance may result from large RF losses in the tuning circuit of NbN fabricated on SiO.

设计并测试了一种用于太赫兹波段的全nbn准光学超导体-绝缘体-超导体(SIS)混频器。该混频器由带抗反射帽的MgO超半球透镜、NbN双槽天线和NbN调谐电路组成。NbN/AlN/NbN结直径约为0.5 μm,电流密度约为30 kA/cm2。该结具有良好的直流I-V特性,具有约5.4 mV的高隙电压和小的子隙漏电流。采用标准y因子法测得的双侧带(DSB)接收机噪声温度在761 GHz时约为2700 K。这个值远远高于基于塔克混合量子理论计算的实验I-V曲线的理论灵敏度。实验混频器性能与理论混频器性能的差异可能是由SiO制备的NbN调谐电路中较大的射频损耗造成的。
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引用次数: 12
Josephson junctions and superconducting field effect transistors based on epitaxial Bi2Sr2Can-1CunO2(n+2) thin films 基于外延Bi2Sr2Can-1CunO2(n+2)薄膜的Josephson结和超导场效应晶体管
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00111-2
U. Frey, M. Basset, K. Üstüner, M. Blumers, Ch. Schwan, J.C. Martinez, H. Adrian

Josephson junctions based on thin films of the Bi2Sr2Ca2Cu3O10+δ compound show IcRn products compatible with YBa2Cu3O7−δ samples. Using quasiparticle tunneling experiments we found evidence for a superconductor–insulator–superconductor tunneling process via localized states in the barrier. The Bi2Sr2CaCu2O8+δ compound is investigated regarding possible applications in superconducting field effect devices. We present thin films of four unit cells thickness that are superconducting at 58 K. An inverted metal–insulator–superconductor structure was prepared. From the modulation of the normal state resistance we estimate a carrier density of 7×1019 cm−3 for a superconducting sample. The shift of the transition temperature was 1 K/V. The modulation of the IV characteristics was demonstrated.

基于Bi2Sr2Ca2Cu3O10+δ化合物薄膜的Josephson结显示IcRn产物与YBa2Cu3O7−δ样品相容。利用准粒子隧穿实验,我们发现了超导体-绝缘体-超导体隧穿过程通过势垒局域态的证据。研究了Bi2Sr2CaCu2O8+δ化合物在超导场效应器件中的应用前景。我们提出了四个单位电池厚度的薄膜,在58k时具有超导性。制备了一种倒置金属-绝缘体-超导体结构。根据正常状态电阻的调制,我们估计超导样品的载流子密度为7×1019 cm−3。转变温度的变化为1 K/V。证明了I-V特性的调制。
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引用次数: 2
The influence of the top and the bottom grain boundaries on the current transport in YBa2Cu3O7-δ step-edge Josephson junction YBa2Cu3O7-δ阶边Josephson结中上下晶界对电流输运的影响
Pub Date : 1998-07-01 DOI: 10.1016/S0964-1807(98)00112-4
F Lombardi , Z.G Ivanov, P Komissinski , G.M Fischer , P Larsson, T Claeson

We have studied the electrical transport properties of the grain boundaries (GBs) formed at the top and at the bottom edges of YBa2Cu3O7-δ step-edge Josephson junctions, for different values of the step angle α. The step-edge junctions were fabricated on (100) LaAlO3 steps using a tilted Ar ion milling. Due to the shadowing effect of the step, the middle and the bottom part of the step edge junction were contacted by thin stripes. We found that for α≈60° the top GB is responsible for the weak link behaviour of our step-edge junctions. On less steep steps, α≈45°, a series of GBs with weak link properties were found to nucleate along the step profile. We also correlated these results with the different microstructural properties of the GBs formed on steps with different angles.

研究了不同阶跃角α值下YBa2Cu3O7-δ阶跃边Josephson结顶部和底部边缘晶界的电输运性质。采用倾斜氩离子铣削方法在(100)LaAlO3台阶上制备了台阶边缘结。由于台阶的阴影效应,台阶边缘连接处的中部和底部被细条纹接触。我们发现,当α≈60°时,顶部的GB负责我们的阶梯边结的弱连接行为。在较陡的α≈45°阶梯上,发现一系列具有弱连接性质的gb沿阶梯形核。我们还将这些结果与不同角度台阶上形成的GBs的不同显微结构特性联系起来。
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引用次数: 5
期刊
Applied Superconductivity
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