Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634446
K. Choquette
Optical confinement from 2-dimensional photonic crystals is shown to enable high performance single mode vertical cavity surface emitting lasers as well as create in-plane novel heterostructure and optimized defect cavity membrane lasers.
{"title":"Physics and applications of photonic crystals in semiconductor lasers","authors":"K. Choquette","doi":"10.1109/INOW.2008.4634446","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634446","url":null,"abstract":"Optical confinement from 2-dimensional photonic crystals is shown to enable high performance single mode vertical cavity surface emitting lasers as well as create in-plane novel heterostructure and optimized defect cavity membrane lasers.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128882810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634490
K. Fujimoto, Y. Higa, S. Matsuzaki, T. Miyamoto
We have proposed a novel SOA with a tunnel injection structure and analyze the operation properties. The results indicate tunnel injection SOAs have a potential for high-speed operation.
{"title":"A study on semiconductor optical amplifier using tunnel injection structure","authors":"K. Fujimoto, Y. Higa, S. Matsuzaki, T. Miyamoto","doi":"10.1109/INOW.2008.4634490","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634490","url":null,"abstract":"We have proposed a novel SOA with a tunnel injection structure and analyze the operation properties. The results indicate tunnel injection SOAs have a potential for high-speed operation.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126257076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Park, N. Kim, I. Song, K. Yee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang
We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.
{"title":"Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm","authors":"J. Park, N. Kim, I. Song, K. Yee, D. Lee, S. H. Pyun, W. Jeong, J.W. Jang","doi":"10.1063/1.3533365","DOIUrl":"https://doi.org/10.1063/1.3533365","url":null,"abstract":"We have studied gain dynamics of InAs/InGaAsP quantum dot semiconductor optical amplifier. The recovery time at the ground state was ~3 ps, much faster than the previously reported values at 1.5 um.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128927089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634567
H. Hayamizu, Y. Kokubun
We designed a microring reflector for tunable semiconductor laser using Thermo-Optic (TO) effect of double cascaded microring resonator.
利用双级联微环谐振腔的热光效应，设计了一种可调谐半导体激光器微环反射器。
{"title":"Microring reflector for tunable semiconductor laser","authors":"H. Hayamizu, Y. Kokubun","doi":"10.1109/INOW.2008.4634567","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634567","url":null,"abstract":"We designed a microring reflector for tunable semiconductor laser using Thermo-Optic (TO) effect of double cascaded microring resonator.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117319395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fang Liu, R. Wan, Y. Rao, Yidong Huang, Wei Zhang, J. Peng
The excitation method of short range surface plasmon polariton mode with hybrid coupler structure is analyzed numerically.
对具有混合耦合器结构的近程表面等离子体激元模式的激发方法进行了数值分析。
{"title":"Excitation of short range surface plasmon polariton mode","authors":"Fang Liu, R. Wan, Y. Rao, Yidong Huang, Wei Zhang, J. Peng","doi":"10.1063/1.3499269","DOIUrl":"https://doi.org/10.1063/1.3499269","url":null,"abstract":"The excitation method of short range surface plasmon polariton mode with hybrid coupler structure is analyzed numerically.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121401384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634512
Y. Wakayama, S. Iwamoto, Y. Arakawa
We report the fabrication and characterization of microcylinder quantum cascade lasers coupled with optical waveguides. Optical amplification and reduction of the threshold current have been observed as the current injected into the waveguide is increased.
{"title":"Microcylinder quantum cascade laser coupled with an optical waveguide","authors":"Y. Wakayama, S. Iwamoto, Y. Arakawa","doi":"10.1109/INOW.2008.4634512","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634512","url":null,"abstract":"We report the fabrication and characterization of microcylinder quantum cascade lasers coupled with optical waveguides. Optical amplification and reduction of the threshold current have been observed as the current injected into the waveguide is increased.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122675949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634499
T. O’Sullivan, Elizabeth A. Munro, O. Levi, J. Harris
We demonstrate progress towards a GaAs-based integrated fluorescence bio-sensor capable of rivaling the performance of large-format fluorescence imaging systems by using a dielectric stack to filter the excitation light.
{"title":"GaAs-based integrated fluorescence bio-sensors: Progress towards high rejection of laser excitation light","authors":"T. O’Sullivan, Elizabeth A. Munro, O. Levi, J. Harris","doi":"10.1109/INOW.2008.4634499","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634499","url":null,"abstract":"We demonstrate progress towards a GaAs-based integrated fluorescence bio-sensor capable of rivaling the performance of large-format fluorescence imaging systems by using a dielectric stack to filter the excitation light.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122693252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634500
A. Ohta, Ming-Chun Tien, S. Neale, Kyoungsik Yu, M. Wu
A room-temperature optofluidic assembly process to integrate III-V microdisk lasers on a silicon chip is demonstrated. The assembly is accomplished using lateral-field optoelectronic tweezers, which achieves a placement accuracy of approximately plusmn 0.25 mum.
{"title":"Assembly of III–V microdisk lasers on silicon using lateral-field optoelectronic tweezers","authors":"A. Ohta, Ming-Chun Tien, S. Neale, Kyoungsik Yu, M. Wu","doi":"10.1109/INOW.2008.4634500","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634500","url":null,"abstract":"A room-temperature optofluidic assembly process to integrate III-V microdisk lasers on a silicon chip is demonstrated. The assembly is accomplished using lateral-field optoelectronic tweezers, which achieves a placement accuracy of approximately plusmn 0.25 mum.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115999108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634531
D. Parekh, Xiaoxue Zhao, C. Chang-Hasnain
The effect of spatial coupling of optical injection locking between a single-mode master laser and a multimode vertical-cavity surface-emitting laser is investigated. Its effects on resonance frequency and 3-dB bandwidth enhancement are studied in detail.
{"title":"Spatial coupling of optically injection-locked multimode VCSELs","authors":"D. Parekh, Xiaoxue Zhao, C. Chang-Hasnain","doi":"10.1109/INOW.2008.4634531","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634531","url":null,"abstract":"The effect of spatial coupling of optical injection locking between a single-mode master laser and a multimode vertical-cavity surface-emitting laser is investigated. Its effects on resonance frequency and 3-dB bandwidth enhancement are studied in detail.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"03 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131242038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-09-26DOI: 10.1109/INOW.2008.4634513
P. Dayal, J. Nakajima, T. Sakaguchi, A. Matsutani, F. Koyama
In this paper we present a 0.98 mum 4-channel VCSEL array fabricated with grading a SiO2 spacer layer. A maximum of 5.4 nm wavelength span has achieved using 8.5 pairs of SiO2/Ta2O5 mirror. Also, surface nanomachining process is presented for making on-wafer precise spacer-layer gradients.
{"title":"Multiple-wavelength VCSEL array by grading a spacer layer for WDM applications","authors":"P. Dayal, J. Nakajima, T. Sakaguchi, A. Matsutani, F. Koyama","doi":"10.1109/INOW.2008.4634513","DOIUrl":"https://doi.org/10.1109/INOW.2008.4634513","url":null,"abstract":"In this paper we present a 0.98 mum 4-channel VCSEL array fabricated with grading a SiO2 spacer layer. A maximum of 5.4 nm wavelength span has achieved using 8.5 pairs of SiO<sub>2</sub>/Ta<sub>2</sub>O<sub>5</sub> mirror. Also, surface nanomachining process is presented for making on-wafer precise spacer-layer gradients.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130625172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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