Pub Date : 2024-07-11DOI: 10.1149/2162-8777/ad5588
R. Pavithra Guru
Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.
基于先进的现代半导体技术的电子器件，主要侧重于设计更轻、更快、更经济的解决方案，以满足现代数字电子技术的规格要求。最大限度缩小 MOSFET 器件尺寸的一些缺点包括栅极绝缘体缩放、短沟道效应 (SCE)、浅结技术和 MOSFET 器件的离态漏电流。此外，传统的二氧化硅（SiO2）电介质材料的最大电容受到限制，而且由于厚度问题，隧道电流泄漏也会增加。因此，需要一种高介电材料来替代二氧化硅，以克服上述问题。在这个模型中，N 型 MOSFET 是基于双层高 K 介电介质设计的，其厚度根据最大电容和最小阈值电压进行了优化。在 2.5 v 漏极电压下，HfO2、Al2O3 和 HfO2+Si3N4 的漏极电流分别为 1.87 mA、1.51 mA 和 3.54 mA。单层和双层 MOSFET 的读写延迟分别为 70.84 ps、82.64 ps、95.21 ps 和 10.24 ps、15.47 ps、21.74 ps。因此，与单层介质 MOSFET 相比，设计和仿真的野马优化 N-MOSFET 双层高 k 介质具有更好的电气特性。
{"title":"Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics","authors":"R. Pavithra Guru","doi":"10.1149/2162-8777/ad5588","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5588","url":null,"abstract":"Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"77 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141613608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1149/2162-8777/ad5dfb
G. Satayanarayana Goud, Nakiraboina Venkatesh, D. Ravi Kumar, Syed Ismail Ahmad and P. Veerasomaiah
Through the citrate-gel auto-combustion technique, we synthesized Co-doped cadmium nano ferrites (NFs) with the formula CoxCd1−xFe2O4 (where 0 ≤ x ≤ 1.0 with increments of 0.2). The synthesized materials underwent comprehensive analysis utilizing X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy. Magnetic and electrical properties were evaluated using a vibrating sample magnetometer and LCR meter, respectively. XRD analysis confirmed the spinel phase structure and FD3M space group. SEM analysis revealed agglomerations of nanoparticles and grain boundaries. Elemental analysis of the synthesized nanomaterials was provided by energy dispersive spectroscopy. FTIR spectroscopy identified two main broad bands corresponding to the tetrahedral (A) and octahedral (B) sites, confirming the spinel structure. Magnetic properties such as magnetic saturation, coercivity, and remanent magnetization were characterized using VSM. Additionally, the LCR meter assessed frequency and temperature-dependent dielectric parameters, including AC conductivity (σAC), dielectric permittivity, dielectric loss (tan δ), and impedance spectra. An increase in AC conductivity (σAC) was observed with increasing temperature and frequency.
通过柠檬酸凝胶自动燃烧技术，我们合成了钴掺杂的纳米镉铁氧体（NFs），其化学式为 CoxCd1-xFe2O4（其中 0 ≤ x ≤ 1.0，增量为 0.2）。利用 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、傅立叶变换红外光谱 (FTIR) 和 X 射线光电子能谱对合成材料进行了全面分析。磁性和电性分别使用振动样品磁力计和 LCR 计进行了评估。XRD 分析证实了尖晶石相结构和 FD3M 空间群。扫描电镜分析显示了纳米颗粒的团聚和晶界。能谱仪对合成的纳米材料进行了元素分析。傅立叶变换红外光谱确定了与四面体（A）和八面体（B）位点相对应的两个主要宽带，证实了尖晶石结构。磁饱和度、矫顽力和剩磁等磁性能是用 VSM 表征的。此外，LCR 计还评估了频率和温度相关的介电参数，包括交流电导率（σAC）、介电常数、介电损耗（tan δ）和阻抗谱。观察到交流电导率（σAC）随着温度和频率的升高而增加。
{"title":"Co3+ Doped CdFe2O4 Nanoparticles: Structural, Optical, Magnetic, and Electrical Properties","authors":"G. Satayanarayana Goud, Nakiraboina Venkatesh, D. Ravi Kumar, Syed Ismail Ahmad and P. Veerasomaiah","doi":"10.1149/2162-8777/ad5dfb","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfb","url":null,"abstract":"Through the citrate-gel auto-combustion technique, we synthesized Co-doped cadmium nano ferrites (NFs) with the formula CoxCd1−xFe2O4 (where 0 ≤ x ≤ 1.0 with increments of 0.2). The synthesized materials underwent comprehensive analysis utilizing X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy. Magnetic and electrical properties were evaluated using a vibrating sample magnetometer and LCR meter, respectively. XRD analysis confirmed the spinel phase structure and FD3M space group. SEM analysis revealed agglomerations of nanoparticles and grain boundaries. Elemental analysis of the synthesized nanomaterials was provided by energy dispersive spectroscopy. FTIR spectroscopy identified two main broad bands corresponding to the tetrahedral (A) and octahedral (B) sites, confirming the spinel structure. Magnetic properties such as magnetic saturation, coercivity, and remanent magnetization were characterized using VSM. Additionally, the LCR meter assessed frequency and temperature-dependent dielectric parameters, including AC conductivity (σAC), dielectric permittivity, dielectric loss (tan δ), and impedance spectra. An increase in AC conductivity (σAC) was observed with increasing temperature and frequency.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"37 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1149/2162-8777/ad5c9e
Divya Beebireddy, Kaleem Fatima, Nirmala Devi L.
This comprehensive study delves into the intricate analysis of the electrical and analog/RF performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization process, various DC and analog/RF metrics were taken into account. It is observed that, as the gate length decreases (12 nm to 8 nm), there is an increment in drain induced barrier lowering (DIBL), switching ratio (Ion/Ioff), and subthreshold swing (SS). Conversely, reducing the size of TNS (and WNS) from 10 nm to 5 nm (and 20 nm to 10 nm, respectively) lead to notable improvements, with a 34.4% (21.01%) decrease in SS, 93.19% (58.86%) decrease in DIBL, and 98.6% (41.06%) increase in Ion/Ioff. Furthermore, the analog/RF performance metrics of the device is carefully examined across dimensional variations, revealing significant improvements at the optimal values. Additionally, the study extends to the evaluation of inverter circuit characteristics with DM JL Tree-FET. Remarkably, the static noise margin (SNM) and delay exhibit 337.3 mV and 3.053 ps, respectively, positioning the device as a prime candidate for applications demanding low power consumption and high-frequency operation in future technology nodes.
{"title":"Optimizing Device Dimensions for Dual Material Junctionless Tree-FET: A Path to Improved Analog/RF Performance","authors":"Divya Beebireddy, Kaleem Fatima, Nirmala Devi L.","doi":"10.1149/2162-8777/ad5c9e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c9e","url":null,"abstract":"This comprehensive study delves into the intricate analysis of the electrical and analog/RF performance of the Dual Material (DM) junctionless (JL) Tree-FET. During the optimization process, various DC and analog/RF metrics were taken into account. It is observed that, as the gate length decreases (12 nm to 8 nm), there is an increment in drain induced barrier lowering (DIBL), switching ratio (I<sub>on</sub>/I<sub>off</sub>), and subthreshold swing (SS). Conversely, reducing the size of T<sub>NS</sub> (and W<sub>NS</sub>) from 10 nm to 5 nm (and 20 nm to 10 nm, respectively) lead to notable improvements, with a 34.4% (21.01%) decrease in SS, 93.19% (58.86%) decrease in DIBL, and 98.6% (41.06%) increase in I<sub>on</sub>/I<sub>off</sub>. Furthermore, the analog/RF performance metrics of the device is carefully examined across dimensional variations, revealing significant improvements at the optimal values. Additionally, the study extends to the evaluation of inverter circuit characteristics with DM JL Tree-FET. Remarkably, the static noise margin (SNM) and delay exhibit 337.3 mV and 3.053 ps, respectively, positioning the device as a prime candidate for applications demanding low power consumption and high-frequency operation in future technology nodes.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"17 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1149/2162-8777/ad5c9d
Anju Gedam, Bibhudendra Acharya, Guru Prasad Mishra
In the nanoscale, the process parameters and device dimension variation extensively affect the electrical performance of the device. Therefore, an inclusive study for the prediction of the overall device behavior is extremely necessary. In this manuscript, process variations caused by random dopant fluctuation (RDFs), variation of oxide thickness, and workfunction during fabrication are analyzed in junctionless nanotube TFET. The work quantitatively evaluates the impact of process variability on the various electrical parameters like energy band diagram, electric field, carrier concentration, and drain current of the nanotube TFET structure. The device simulation has been carried out with a 3-D SILVACO ATLAS simulator.
{"title":"Study of Process Variation in Nanotube Tunnel Field Effect Transistor","authors":"Anju Gedam, Bibhudendra Acharya, Guru Prasad Mishra","doi":"10.1149/2162-8777/ad5c9d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c9d","url":null,"abstract":"In the nanoscale, the process parameters and device dimension variation extensively affect the electrical performance of the device. Therefore, an inclusive study for the prediction of the overall device behavior is extremely necessary. In this manuscript, process variations caused by random dopant fluctuation (RDFs), variation of oxide thickness, and workfunction during fabrication are analyzed in junctionless nanotube TFET. The work quantitatively evaluates the impact of process variability on the various electrical parameters like energy band diagram, electric field, carrier concentration, and drain current of the nanotube TFET structure. The device simulation has been carried out with a 3-D SILVACO ATLAS simulator.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"145 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1149/2162-8777/ad5c00
Priyadharshini G., D. Geetha, P. S. Ramesh
This study presents the synthesis of a nanocomposite intended to serve as a counter electrode in dye-sensitized solar cells (DSSCs), replacing platinum electrodes, as well as functioning as a nanocatalyst for organic dye degradation. Graphene oxide was synthesized using a modified Hummers method, and cobalt-doped nickel sulfide on graphene oxide (Co-NiS/GO) was prepared via hydrothermal synthesis. The samples underwent characterization through various testing methods. X-ray diffraction analysis revealed a hexagonal structure with a crystallite size of 30 nm. Field-emission scanning electron microscopy/energy-dispersive X-ray images showed a cornflake-like structure, with elements such as cobalt, nickel, sulfur, carbon, and oxygen present. Chemical valence states were confirmed through X-ray photoelectron specteroscopy analysis. The power conversion efficiency of the Co-NiS/GO counter electrode in DSSCs was investigated, with parameters such as open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency calculated to be 8.6032 mV, 0.5484 mA cm−2, 61, and 2.83%, respectively, based on I-V studies. Furthermore, the developed Co-NiS/GO nanocomposite was assessed for its photo catalytic dye degradation capabilities using malachite green (MG), achieving a degradation rate of approximately 96% within 180 min.
本研究介绍了一种纳米复合材料的合成过程，该材料可用作染料敏化太阳能电池（DSSC）的对电极，取代铂电极，还可用作有机染料降解的纳米催化剂。我们采用改进的 Hummers 法合成了氧化石墨烯，并通过水热合成法制备了氧化石墨烯上的掺钴硫化镍（Co-NiS/GO）。样品通过各种测试方法进行了表征。X 射线衍射分析表明，样品呈六边形结构，晶粒大小为 30 纳米。场发射扫描电子显微镜/能量色散 X 射线图像显示出玉米片状结构，其中含有钴、镍、硫、碳和氧等元素。通过 X 射线光电子能谱分析确认了化学价态。研究了 Co-NiS/GO 对电极在 DSSC 中的功率转换效率，根据 I-V 研究计算，开路电压、短路电流密度、填充因子和功率转换效率等参数分别为 8.6032 mV、0.5484 mA cm-2、61 和 2.83%。此外，还利用孔雀石绿（MG）评估了所开发的 Co-NiS/GO 纳米复合材料的光催化染料降解能力，在 180 分钟内实现了约 96% 的降解率。
{"title":"Nanocomposites of Co-NiS/GO as a Versatile Catalyst: Enabling Platinum-Free DSSC Counter Electrodes and Enhancing Organic Dye Degradation","authors":"Priyadharshini G., D. Geetha, P. S. Ramesh","doi":"10.1149/2162-8777/ad5c00","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c00","url":null,"abstract":"This study presents the synthesis of a nanocomposite intended to serve as a counter electrode in dye-sensitized solar cells (DSSCs), replacing platinum electrodes, as well as functioning as a nanocatalyst for organic dye degradation. Graphene oxide was synthesized using a modified Hummers method, and cobalt-doped nickel sulfide on graphene oxide (Co-NiS/GO) was prepared via hydrothermal synthesis. The samples underwent characterization through various testing methods. X-ray diffraction analysis revealed a hexagonal structure with a crystallite size of 30 nm. Field-emission scanning electron microscopy/energy-dispersive X-ray images showed a cornflake-like structure, with elements such as cobalt, nickel, sulfur, carbon, and oxygen present. Chemical valence states were confirmed through X-ray photoelectron specteroscopy analysis. The power conversion efficiency of the Co-NiS/GO counter electrode in DSSCs was investigated, with parameters such as open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency calculated to be 8.6032 mV, 0.5484 mA cm<sup>−2</sup>, 61, and 2.83%, respectively, based on I-V studies. Furthermore, the developed Co-NiS/GO nanocomposite was assessed for its photo catalytic dye degradation capabilities using malachite green (MG), achieving a degradation rate of approximately 96% within 180 min.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A bidirectional optimization strategy was adopted to fabricate (1-x)(Ba0.975Na0.05)Ti0.99Nb0.01O3)-xBi(Zn0.2Mg0.2Al0.2Sn0.2Zr0.2)O3(abbreviated as (1-x)BNNT-xBZMASZ, x = 0.02–0.10) ceramics, aimed to improve the energy storage performance. X-ray diffraction results revealed that Bi2+ cations entered the A site and the multiple cations occupied the B site of BNNT, thereby decreased the remnant polarization intensity and refined the hysteresis loop. Scanning electron microscopy images showed uniform morphologies with clear grain boundaries of the ceramics, and the average size decreased with x increasing. The substitution of multiple cations at the B-site induced the splitting of macroscopic ferroelectric domains into smaller polar nanodomains, leading to the formation of high-dynamic polar nanoregions and accelerating the transition from BNNT to relaxor ferroelectrics, thus improving relaxation properties of the material. The excellent energy storage density (Wrec ∼ 2.80 J cm−3) and efficiency (∼90.0%) can be obtained under 200 kV cm−1. Moreover, the discharge-charge testing revealed excellent current density (∼589.5 A cm−2), high power density (∼20.63 MW cm−2), and extremely short discharge time (t0.9 ∼ 50.4 ns), along with exceptional temperature stability and cycling stability under the equivalent electric field of 120 kV cm−1. The 0.92BNNT-0.08BZMASZ ceramic offers a new approach to the design and an improvement of pulsed dielectric capacitor materials.
采用双向优化策略制备了(1-x)(Ba0.975Na0.05)Ti0.99Nb0.01O3)-xBi(Zn0.2Mg0.2Al0.2Sn0.2Zr0.2)O3（简称(1-x)BNNT-xBZMASZ，x = 0.02-0.10）陶瓷，旨在提高其储能性能。X 射线衍射结果表明，Bi2+ 阳离子进入了 BNNT 的 A 位，而多个阳离子占据了 B 位，从而降低了残余极化强度，完善了磁滞环。扫描电子显微镜图像显示陶瓷形貌均匀，晶界清晰，平均尺寸随 x 的增加而减小。B 位上多个阳离子的取代诱导了宏观铁电畴分裂成更小的极性纳米域，从而形成了高动态极性纳米区，加速了从 BNNT 向弛豫铁电的转变，从而改善了材料的弛豫特性。在 200 kV cm-1 的电压下，该材料可获得优异的储能密度（Wrec ∼ 2.80 J cm-3）和效率（∼90.0%）。此外，放电-充电测试表明，在 120 kV cm-1 的等效电场下，0.92BNNT-0-NT 晶体具有优异的电流密度（∼589.5 A cm-2）、高功率密度（∼20.63 MW cm-2）和极短的放电时间（t0.9 ∼ 50.4 ns），以及出色的温度稳定性和循环稳定性。0.92BNNT-0.08BZMASZ 陶瓷为脉冲电介质电容器材料的设计和改进提供了一种新方法。
{"title":"Enhancement of Charge-Discharge Properties and Temperature Stability of (Ba0.975Na0.05)Ti0.99Nb0.01O3 Ceramic by Doping High-Entropy Oxide","authors":"Zheng-Xiang Bian, Qing-Qing Liu, Zhi-Wei Li, Zhi-Hui Chen and Yu-Rong Ren","doi":"10.1149/2162-8777/ad5dfa","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfa","url":null,"abstract":"A bidirectional optimization strategy was adopted to fabricate (1-x)(Ba0.975Na0.05)Ti0.99Nb0.01O3)-xBi(Zn0.2Mg0.2Al0.2Sn0.2Zr0.2)O3(abbreviated as (1-x)BNNT-xBZMASZ, x = 0.02–0.10) ceramics, aimed to improve the energy storage performance. X-ray diffraction results revealed that Bi2+ cations entered the A site and the multiple cations occupied the B site of BNNT, thereby decreased the remnant polarization intensity and refined the hysteresis loop. Scanning electron microscopy images showed uniform morphologies with clear grain boundaries of the ceramics, and the average size decreased with x increasing. The substitution of multiple cations at the B-site induced the splitting of macroscopic ferroelectric domains into smaller polar nanodomains, leading to the formation of high-dynamic polar nanoregions and accelerating the transition from BNNT to relaxor ferroelectrics, thus improving relaxation properties of the material. The excellent energy storage density (Wrec ∼ 2.80 J cm−3) and efficiency (∼90.0%) can be obtained under 200 kV cm−1. Moreover, the discharge-charge testing revealed excellent current density (∼589.5 A cm−2), high power density (∼20.63 MW cm−2), and extremely short discharge time (t0.9 ∼ 50.4 ns), along with exceptional temperature stability and cycling stability under the equivalent electric field of 120 kV cm−1. The 0.92BNNT-0.08BZMASZ ceramic offers a new approach to the design and an improvement of pulsed dielectric capacitor materials.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"2016 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-09DOI: 10.1149/2162-8777/ad5dfc
Zein K. Heiba, Noura M. Farag, Asmaa M. Abozied, Ali Badawi and Mohamed Bakr Mohamed
We investigated the influence of CdS on the structural and optical properties of nano ZnWO4 for optical applications. (1−x)ZnWO4/xCdS (x; 0 to 0.25) heterojunctions were formed and the structure and microstructure of the ZnWO4 and CdS phases developed were investigated using Rietveld refinement analysis for synchrotron X-ray diffraction data. Phase analysis revealed the phase percentage of the CdS phase is always less than the nominated value (x), implying merging of some Cd and S into ZnWO4. Raman spectra showed CdS peaks, confirming the existence of CdS. Scanning electron microscopy showed two distinct morphologies: plate-like particles (ZnWO4 phase) and spherical shape (CdS phase). UV–vis diffuse measurements revealed enhancement of absorbance and reduction in reflectance and transmittance, in the range 300–56 nm, as the amount of CdS (x) increased in the (1−x)ZnWO4/xCdS system. Band gap of the ZnWO4 phase reduced from 4.0 eV for x = 0.0 to 3.9, 3.6, and 2.9 eV for x = 0.05, 0.1, and 0.25, respectively. The highest refractive index values were obtained as the amount of CdS reached 0.05. Impact of alloying on linear and nonlinear parameters and emitted photoluminescence spectra was studied. Upon loading ZnWO4 with CdS, the PL intensity is greatly quenched and the whole spectrum is red shifted, from 480 to 540 nm. CIE chromaticity diagrams show that ZnWO4 sample without any doping exhibits a blue color while the doped system reveals green-yellow colors.
{"title":"The Influence of CdS on the Structural and Optical Properties of Nano ZnWO4","authors":"Zein K. Heiba, Noura M. Farag, Asmaa M. Abozied, Ali Badawi and Mohamed Bakr Mohamed","doi":"10.1149/2162-8777/ad5dfc","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5dfc","url":null,"abstract":"We investigated the influence of CdS on the structural and optical properties of nano ZnWO4 for optical applications. (1−x)ZnWO4/xCdS (x; 0 to 0.25) heterojunctions were formed and the structure and microstructure of the ZnWO4 and CdS phases developed were investigated using Rietveld refinement analysis for synchrotron X-ray diffraction data. Phase analysis revealed the phase percentage of the CdS phase is always less than the nominated value (x), implying merging of some Cd and S into ZnWO4. Raman spectra showed CdS peaks, confirming the existence of CdS. Scanning electron microscopy showed two distinct morphologies: plate-like particles (ZnWO4 phase) and spherical shape (CdS phase). UV–vis diffuse measurements revealed enhancement of absorbance and reduction in reflectance and transmittance, in the range 300–56 nm, as the amount of CdS (x) increased in the (1−x)ZnWO4/xCdS system. Band gap of the ZnWO4 phase reduced from 4.0 eV for x = 0.0 to 3.9, 3.6, and 2.9 eV for x = 0.05, 0.1, and 0.25, respectively. The highest refractive index values were obtained as the amount of CdS reached 0.05. Impact of alloying on linear and nonlinear parameters and emitted photoluminescence spectra was studied. Upon loading ZnWO4 with CdS, the PL intensity is greatly quenched and the whole spectrum is red shifted, from 480 to 540 nm. CIE chromaticity diagrams show that ZnWO4 sample without any doping exhibits a blue color while the doped system reveals green-yellow colors.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"33 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141584706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad5bff
Tejas Chennappa and Sudha D. Kamath
This comprehensive review article discusses the brief history, development, and applications of phosphor-based optical thermometers, which have become increasingly important in various fields due to their ability to measure temperature remotely and with high precision. The article highlights the importance of choosing the suitable phosphor material for a given application, considering factors such as crystal structure and mode of thermometry. It then delves into the structural importance of phosphors, discussing their luminescent properties. The review focuses particularly on fluorescence-based temperature-dependent techniques, including the fluorescence intensity ratio method, which has garnered significant attention due to its straightforward implementation, affordability, and self-referential nature. The article discusses the mathematical formulations underlying this method, including the Boltzmann distribution and the effective lifetime calculation. The review also explores the concept of dual-mode thermometry, which involves the use of multiple luminescent centers to enhance sensitivity and thermal stability. This approach is particularly useful in applications where single-emitter thermometers are vulnerable to variations in excitation intensity or detector stability. The article highlights the advantages, limitations, and future developments of phosphor-based thermometers, including their ability to measure temperature remotely and with high precision. Highlights Suitability of double perovskite phosphors for optical thermometry applications. Double perovskite structure influence on the sensitivities of temperature sensors. Fluorescence intensity ratio method is effective for the interpretation of thermal sensor sensitivities. Phosphors can be used as optical temperature sensors at higher temperatures.
{"title":"Review—Structural and Optical Interpretations on Phosphor-Based Optical Thermometry","authors":"Tejas Chennappa and Sudha D. Kamath","doi":"10.1149/2162-8777/ad5bff","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5bff","url":null,"abstract":"This comprehensive review article discusses the brief history, development, and applications of phosphor-based optical thermometers, which have become increasingly important in various fields due to their ability to measure temperature remotely and with high precision. The article highlights the importance of choosing the suitable phosphor material for a given application, considering factors such as crystal structure and mode of thermometry. It then delves into the structural importance of phosphors, discussing their luminescent properties. The review focuses particularly on fluorescence-based temperature-dependent techniques, including the fluorescence intensity ratio method, which has garnered significant attention due to its straightforward implementation, affordability, and self-referential nature. The article discusses the mathematical formulations underlying this method, including the Boltzmann distribution and the effective lifetime calculation. The review also explores the concept of dual-mode thermometry, which involves the use of multiple luminescent centers to enhance sensitivity and thermal stability. This approach is particularly useful in applications where single-emitter thermometers are vulnerable to variations in excitation intensity or detector stability. The article highlights the advantages, limitations, and future developments of phosphor-based thermometers, including their ability to measure temperature remotely and with high precision. Highlights Suitability of double perovskite phosphors for optical thermometry applications. Double perovskite structure influence on the sensitivities of temperature sensors. Fluorescence intensity ratio method is effective for the interpretation of thermal sensor sensitivities. Phosphors can be used as optical temperature sensors at higher temperatures.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"52 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-04DOI: 10.1149/2162-8777/ad5c01
Sruthy Subash, Abu Faizal, T. D. Mercy and K. Kamala Bharathi
All solid lithium-ion batteries (ASLB) have gained a lot of attention as it could deliver high energy and power density. In order to completely establish ASLB, proper understanding of solid electrolyte is very vital and the research from diverse point is still undergoing. Among them, NASICON-type phosphate based solid electrolytes are one of the promising materials due to good ionic conductivity and atmospheric stability. Addition of proper dopants into the parent material could cause an increment in their ionic conductivity as well as stability, thus fitting the material apt as solid electrolyte. This study aims in understanding the effect of ionic conductivity and stability of Lithium Aluminium Germanium Phosphate (LAGP) material upon adding Zinc as dopant material. We explored the effect of structural, ionic conductivity, stability against Li and Ac conductivity properties of Li1.5Al0.5−xZnxGe1.5(PO4)3 solid electrolyte with x = 0, 0.1 and 0.2. Our study showed that doping of aluminium with slightly bigger Zn ion could enhance the stability and conductivity of the material without changing the crystal structure. When x = 0.1 the ionic conductivity of the material attained is 1 × 10−5 S cm−1 at RT, which reaches 2.57 × 10−5 S cm−1 at 60 °C. Such a change in conductivity arises due to the expansion of ionic pathways which can be further tuned by exploring the limiting concentration 0 ≤ x < 0.1. Moreover, the sample also showed good stability at 0.03 and 0.05 mA cm−2 current densities against Li metal. Present study shows that Zn doping can improve the ionic conductivity of LAGP moderately and it can be used as a solid electrolyte for fabricating all-solid-state batteries.
全固态锂离子电池（ASLB）因其可提供高能量和高功率密度而备受关注。为了彻底建立全固态锂离子电池，正确理解固体电解质至关重要，目前仍在从不同角度进行研究。其中，NASICON 型磷酸盐固体电解质具有良好的离子传导性和大气稳定性，是很有前途的材料之一。在母体材料中添加适当的掺杂剂可提高其离子导电性和稳定性，从而使材料适合用作固体电解质。本研究旨在了解添加锌作为掺杂剂材料后，锂铝锗磷酸盐（LAGP）材料的离子电导率和稳定性的影响。我们探讨了 Li1.5Al0.5-xZnxGe1.5(PO4)3（x = 0、0.1 和 0.2）固态电解质的结构、离子导电性、对锂的稳定性和 Ac 导电性能的影响。我们的研究表明，在铝中掺入稍大的锌离子可以在不改变晶体结构的情况下提高材料的稳定性和导电性。当 x = 0.1 时，材料的离子电导率在常温下为 1 × 10-5 S cm-1，在 60 °C 时达到 2.57 × 10-5 S cm-1。这种电导率的变化是由于离子通路的扩展造成的，可以通过探索极限浓度 0 ≤ x < 0.1 来进一步调整。此外，该样品在 0.03 和 0.05 mA cm-2 电流密度下对锂金属也表现出良好的稳定性。本研究表明，掺杂锌可适度提高 LAGP 的离子电导率，它可用作制造全固态电池的固态电解质。
{"title":"Investigation of Zn Doped Li1.5Al0.5−xZnxGe1.5(PO4)3 (x = 0, 0.1 & 0.2) as a Solid Electrolyte for Li Ion Batteries","authors":"Sruthy Subash, Abu Faizal, T. D. Mercy and K. Kamala Bharathi","doi":"10.1149/2162-8777/ad5c01","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5c01","url":null,"abstract":"All solid lithium-ion batteries (ASLB) have gained a lot of attention as it could deliver high energy and power density. In order to completely establish ASLB, proper understanding of solid electrolyte is very vital and the research from diverse point is still undergoing. Among them, NASICON-type phosphate based solid electrolytes are one of the promising materials due to good ionic conductivity and atmospheric stability. Addition of proper dopants into the parent material could cause an increment in their ionic conductivity as well as stability, thus fitting the material apt as solid electrolyte. This study aims in understanding the effect of ionic conductivity and stability of Lithium Aluminium Germanium Phosphate (LAGP) material upon adding Zinc as dopant material. We explored the effect of structural, ionic conductivity, stability against Li and Ac conductivity properties of Li1.5Al0.5−xZnxGe1.5(PO4)3 solid electrolyte with x = 0, 0.1 and 0.2. Our study showed that doping of aluminium with slightly bigger Zn ion could enhance the stability and conductivity of the material without changing the crystal structure. When x = 0.1 the ionic conductivity of the material attained is 1 × 10−5 S cm−1 at RT, which reaches 2.57 × 10−5 S cm−1 at 60 °C. Such a change in conductivity arises due to the expansion of ionic pathways which can be further tuned by exploring the limiting concentration 0 ≤ x < 0.1. Moreover, the sample also showed good stability at 0.03 and 0.05 mA cm−2 current densities against Li metal. Present study shows that Zn doping can improve the ionic conductivity of LAGP moderately and it can be used as a solid electrolyte for fabricating all-solid-state batteries.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141548243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1149/2162-8777/ad5a3b
Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali and Laraib Mustafa
The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.
{"title":"High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes","authors":"Syeda Wageeha Shakir, Muhammad Usman, Usman Habib, Shazma Ali and Laraib Mustafa","doi":"10.1149/2162-8777/ad5a3b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5a3b","url":null,"abstract":"The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"40 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141548245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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