Pub Date : 2024-07-02DOI: 10.1149/2162-8777/ad5b87
MohammedMustafa Almarzoge, Metin Gencten and Gamzenur Ozsin
Sodium-ion batteries have been the focus of interest in recent years due to abundance and cost-effectiveness of sodium resources globally as opposed to lithium. In this work, sulfur-doped graphene oxide (SGO) was synthesized using a straightforward, one-step, cost-effective, and eco-friendly chronoamperometric method at room temperature. The resulting powder was then utilized as active anode material for Na-ion batteries. The surface of the synthesized SGO powder, which consists of approximately three layers with 19 sp2 hybridized carbon rings and a domain size of about 50 nm, is covalently doped with –C-SOx-C- (x = 2,3) groups. The deduced diffusion coefficient from electrochemical impedance spectroscopy and galvanostatic intermittent titration technique measurements for SGO as anode in NIBs is in the range of 10−11–10−12 cm2.s−1. At 0.1 C rate, the initial discharge capacity recorded 256.7 mAh.g−1 at 0.1 C rate. In addition, the capacity retention for long-term cycling of 100 cycles at 2 C rate was 99.85%. The unique structure of SGO allows us to achieve satisfactory anode performance in capacity and rate capability, with potential for further enhancement. Highlights SGO was used as anode for sodium ion batteries for the first time. At 0.1C-rate the initial discharge capacity of the battery was recorded 256.7 mAh.g−1. At the end of 100 cycle, capacity retention of the battery was 99.85%.at 2 C.
{"title":"Production of Sulphur-Doped Graphene Oxide as an Anode Material for Na-Ion Batteries","authors":"MohammedMustafa Almarzoge, Metin Gencten and Gamzenur Ozsin","doi":"10.1149/2162-8777/ad5b87","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5b87","url":null,"abstract":"Sodium-ion batteries have been the focus of interest in recent years due to abundance and cost-effectiveness of sodium resources globally as opposed to lithium. In this work, sulfur-doped graphene oxide (SGO) was synthesized using a straightforward, one-step, cost-effective, and eco-friendly chronoamperometric method at room temperature. The resulting powder was then utilized as active anode material for Na-ion batteries. The surface of the synthesized SGO powder, which consists of approximately three layers with 19 sp2 hybridized carbon rings and a domain size of about 50 nm, is covalently doped with –C-SOx-C- (x = 2,3) groups. The deduced diffusion coefficient from electrochemical impedance spectroscopy and galvanostatic intermittent titration technique measurements for SGO as anode in NIBs is in the range of 10−11–10−12 cm2.s−1. At 0.1 C rate, the initial discharge capacity recorded 256.7 mAh.g−1 at 0.1 C rate. In addition, the capacity retention for long-term cycling of 100 cycles at 2 C rate was 99.85%. The unique structure of SGO allows us to achieve satisfactory anode performance in capacity and rate capability, with potential for further enhancement. Highlights SGO was used as anode for sodium ion batteries for the first time. At 0.1C-rate the initial discharge capacity of the battery was recorded 256.7 mAh.g−1. At the end of 100 cycle, capacity retention of the battery was 99.85%.at 2 C.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"36 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1149/2162-8777/ad5a3c
Rohit Jasrotia, Anand Sharma, Jahangeer Ahmed, Ritesh Verma, Saad M. Alshehri, Natrayan Lakshmaiya, Mika Sillanpää, Rajinder Kumar and Virat Khanna
The sol-gel auto-combustion (SC) procedure was utilised to fabricate lanthanum-doped Mg-Zn nanostructures with the chemical composition, Mg0.6Zn0.4LaxFe2-xO4, (x = 0, 0.05, 0.10). X-ray diffraction showed nanocrystalline and single-phase of Mg-Zn nanostructures. The morphological traits showed formation of irregular and aggregated grains. Fourier transform infrared spectroscopy detected the formation of two characteristic band positions that fall within the range of 400 to 600 cm−1 and may occur because of stretching vibration within metal-oxygen (M-O) cations located at interstitial positions. From the M-H loops, the excellent values of magnetic factors, such as the saturation magnetization (Ms), rentivity (Mr), and coercivity (Hc) ranging from 35.30 to 44.79 emu g−1, 1.40 to 3.75 emu g−1, and 11.56 to 41.42 Oe were obtained. The loss tangent (tan δ) was observed to be miniscule for all of the samples due to which they can be useful for electronic applications. However, the initial values of the real permeability ( ) was high and it decreases until 4 GHz, after which it acquires a constant value for rest of frequency range. However, observed low values of the magnetic loss tangent (tan δμ) were due to the large grain size and the high densification of the samples.
{"title":"Lanthanum Substituted Mg-Zn Ferrite Nanostructures: A Comprehensive Study of Cation Distribution, Structural, Morphological, Optical, Magnetic, Dielectric, and Electromagnetic Traits","authors":"Rohit Jasrotia, Anand Sharma, Jahangeer Ahmed, Ritesh Verma, Saad M. Alshehri, Natrayan Lakshmaiya, Mika Sillanpää, Rajinder Kumar and Virat Khanna","doi":"10.1149/2162-8777/ad5a3c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5a3c","url":null,"abstract":"The sol-gel auto-combustion (SC) procedure was utilised to fabricate lanthanum-doped Mg-Zn nanostructures with the chemical composition, Mg0.6Zn0.4LaxFe2-xO4, (x = 0, 0.05, 0.10). X-ray diffraction showed nanocrystalline and single-phase of Mg-Zn nanostructures. The morphological traits showed formation of irregular and aggregated grains. Fourier transform infrared spectroscopy detected the formation of two characteristic band positions that fall within the range of 400 to 600 cm−1 and may occur because of stretching vibration within metal-oxygen (M-O) cations located at interstitial positions. From the M-H loops, the excellent values of magnetic factors, such as the saturation magnetization (Ms), rentivity (Mr), and coercivity (Hc) ranging from 35.30 to 44.79 emu g−1, 1.40 to 3.75 emu g−1, and 11.56 to 41.42 Oe were obtained. The loss tangent (tan δ) was observed to be miniscule for all of the samples due to which they can be useful for electronic applications. However, the initial values of the real permeability ( ) was high and it decreases until 4 GHz, after which it acquires a constant value for rest of frequency range. However, observed low values of the magnetic loss tangent (tan δμ) were due to the large grain size and the high densification of the samples.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"73 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-02DOI: 10.1149/2162-8777/ad5b86
Zein K. Heiba, M. M. Ghannam, Ali Badawi and Mohamed Bakr Mohamed
The current study aims to tailor the structure, optical and shielding characteristics of ZnMn2O4 nanostructures through Sn-doping. ZnMn2−xSnxO4 nanostructures were synthesized by the sol-gel technique. The sample containing 5% Sn exhibits the highest level of absorbance. ZnMn2−xSnxO4 system exhibits a maximum optical energy gap value of 2.55 eV when doped with 10% Sn, and a minimum optical energy gap value of 2.23 eV when doped with 5% Sn. The refractive index values of the samples containing 5 and 10% Sn are the highest in comparison to the other samples. The values of the non-linear optical parameters became maximum as x = 0.05. The radiation shielding constants were computed by Phy-X/PSD software. The half value length and tenth value length values reduced as ZnMn2O4 doped with Sn, implying that doped samples have better shielding capabilities than undoped ZnMn2O4. When compared to doped samples, ZnMn2O4 has the highest fast neutron removal cross-section value. ZnMn2-xSnxO4 samples demonstrate a greater rate of absorption for photons with lower energy as opposed to those with higher energy.
本研究旨在通过掺杂锡来定制 ZnMn2O4 纳米结构的结构、光学和屏蔽特性。采用溶胶-凝胶技术合成了 ZnMn2-xSnxO4 纳米结构。含 5%锡的样品吸光度最高。当掺杂 10% 锡时，ZnMn2-xSnxO4 系统显示出 2.55 eV 的最大光学能隙值，而当掺杂 5% 锡时，则显示出 2.23 eV 的最小光学能隙值。与其他样品相比，含 5%和 10%锡的样品折射率值最高。当 x = 0.05 时，非线性光学参数值达到最大。辐射屏蔽常数由 Phy-X/PSD 软件计算得出。当 ZnMn2O4 掺杂 Sn 时，其半值长度和十值长度值减小，这意味着掺杂样品比未掺杂 ZnMn2O4 具有更好的屏蔽能力。与掺杂样品相比，ZnMn2O4 的快中子去除截面值最高。与能量较高的光子相比，ZnMn2-xSnxO4 样品对能量较低的光子的吸收率更高。
{"title":"Tailoring the Structure, Optical and Shielding Characteristics of ZnMn2O4 Nanostructures through Sn-Doping","authors":"Zein K. Heiba, M. M. Ghannam, Ali Badawi and Mohamed Bakr Mohamed","doi":"10.1149/2162-8777/ad5b86","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5b86","url":null,"abstract":"The current study aims to tailor the structure, optical and shielding characteristics of ZnMn2O4 nanostructures through Sn-doping. ZnMn2−xSnxO4 nanostructures were synthesized by the sol-gel technique. The sample containing 5% Sn exhibits the highest level of absorbance. ZnMn2−xSnxO4 system exhibits a maximum optical energy gap value of 2.55 eV when doped with 10% Sn, and a minimum optical energy gap value of 2.23 eV when doped with 5% Sn. The refractive index values of the samples containing 5 and 10% Sn are the highest in comparison to the other samples. The values of the non-linear optical parameters became maximum as x = 0.05. The radiation shielding constants were computed by Phy-X/PSD software. The half value length and tenth value length values reduced as ZnMn2O4 doped with Sn, implying that doped samples have better shielding capabilities than undoped ZnMn2O4. When compared to doped samples, ZnMn2O4 has the highest fast neutron removal cross-section value. ZnMn2-xSnxO4 samples demonstrate a greater rate of absorption for photons with lower energy as opposed to those with higher energy.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"11 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-23DOI: 10.1149/2162-8777/ad57ef
Danish Abdullah and Dinesh C. Gupta
We deployed density functional theory to assess the structural, electronic, elastic, and optical properties of ASiBr3 (A = K, Rb, and Cs). KSiBr3, RbSiBr3, and CsSiBr3 band structure profiles suggest they are semiconductors with direct band gaps of 0.34, 0.36, and 0.39 eV, respectively. The material’s dynamic stability is evidenced by the formation energies acquired negative values (−2.35, −2.18, and −2.08 for K, Rb, and Cs respectively). Mechanical characteristics and elastic constants measured suggest the compound’s mechanical stability and ductile character, which was assessed by calculating the Poissons ratio (>0.25) and Pugh’s ratio (>1.75). The research also explores optical properties, including the dielectric function, refractive index, reflectivity, optical conductivity, absorption coefficient, and extinction coefficient for the optical spectrum. The findings highlight possible applications for these materials in the semiconductor industry and modern electronic gadgets. The optical properties assessment reveals that these materials have strong optical absorption and conductivity, making these compounds the best prospects for usage in solar cells. CsSiBr3’s lower band gap renders it the superior choice for light-emitting diode (LED) and solar cell applications. Our findings may provide a complete understanding for experimentalists to pursue additional research leveraging applications in LEDs, photodetectors, or solar cells.
{"title":"First-Principles Study on the Optoelectronic and Mechanical Properties of Lead-Free Semiconductor Silicon Perovskites ASiBr3 (A = K, Rb, Cs)","authors":"Danish Abdullah and Dinesh C. Gupta","doi":"10.1149/2162-8777/ad57ef","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57ef","url":null,"abstract":"We deployed density functional theory to assess the structural, electronic, elastic, and optical properties of ASiBr3 (A = K, Rb, and Cs). KSiBr3, RbSiBr3, and CsSiBr3 band structure profiles suggest they are semiconductors with direct band gaps of 0.34, 0.36, and 0.39 eV, respectively. The material’s dynamic stability is evidenced by the formation energies acquired negative values (−2.35, −2.18, and −2.08 for K, Rb, and Cs respectively). Mechanical characteristics and elastic constants measured suggest the compound’s mechanical stability and ductile character, which was assessed by calculating the Poissons ratio (>0.25) and Pugh’s ratio (>1.75). The research also explores optical properties, including the dielectric function, refractive index, reflectivity, optical conductivity, absorption coefficient, and extinction coefficient for the optical spectrum. The findings highlight possible applications for these materials in the semiconductor industry and modern electronic gadgets. The optical properties assessment reveals that these materials have strong optical absorption and conductivity, making these compounds the best prospects for usage in solar cells. CsSiBr3’s lower band gap renders it the superior choice for light-emitting diode (LED) and solar cell applications. Our findings may provide a complete understanding for experimentalists to pursue additional research leveraging applications in LEDs, photodetectors, or solar cells.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"28 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141530552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-23DOI: 10.1149/2162-8777/ad57f2
N. Hari Kumar
Nanoscale particles of neodymium-substituted cobalt-cadmium generic formula for nanoferrite Co0.4Cd0.6NdxFe2−xO4 samples at X = 0.000, 0.003, 0.005, 0.007, 0.009, and 0.011 were studied. The prepared powders were synthesised at low temperatures using citrate gel auto-combustion process. The synthesised powders were calcined at 500 °C for four hours. The morphological properties of the sintered powders were investigated, and their crystal structure was determined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD peaks confirmed the spinel ferrite structure. The lattice parameter was calculated from the XRD and showed decreasing trends with 8.442 to 8.308. SEM revealed an irregularly-shaped grain morphology with a homogeneous distribution. Raman spectroscopy analysis showed slight frequency changes in the Raman modes in doped samples, attributed to variations in the cation distribution. The peaks are located at 191, 291, 461, 591, and 671 cm−1. UV spectroscopy studies showed that the energy band gap values decrease with increasing Nd3+ concentration. Direct optical band gap values obtained were 1.238, 1.248, 1.199, 1.135, 1.134, and 1.101 eV with increasing Nd doping. The magnetic hysteresis properties were determined using a SQUID-VSM magnetometer. The hysteresis curves of Co0.4Cd0.6NdxFe2−xO4 nanoparticles show an increase in coercivity with increasing doping concentration. This enhancement is attributed to the multi-domain behaviour.
{"title":"Rare Earth Nd3+ Doping Cobalt-Cadmium Nanoferrites Structural, Optical, and Magnetic Properties and Applications","authors":"N. Hari Kumar","doi":"10.1149/2162-8777/ad57f2","DOIUrl":"https://doi.org/10.1149/2162-8777/ad57f2","url":null,"abstract":"Nanoscale particles of neodymium-substituted cobalt-cadmium generic formula for nanoferrite Co0.4Cd0.6NdxFe2−xO4 samples at X = 0.000, 0.003, 0.005, 0.007, 0.009, and 0.011 were studied. The prepared powders were synthesised at low temperatures using citrate gel auto-combustion process. The synthesised powders were calcined at 500 °C for four hours. The morphological properties of the sintered powders were investigated, and their crystal structure was determined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD peaks confirmed the spinel ferrite structure. The lattice parameter was calculated from the XRD and showed decreasing trends with 8.442 to 8.308. SEM revealed an irregularly-shaped grain morphology with a homogeneous distribution. Raman spectroscopy analysis showed slight frequency changes in the Raman modes in doped samples, attributed to variations in the cation distribution. The peaks are located at 191, 291, 461, 591, and 671 cm−1. UV spectroscopy studies showed that the energy band gap values decrease with increasing Nd3+ concentration. Direct optical band gap values obtained were 1.238, 1.248, 1.199, 1.135, 1.134, and 1.101 eV with increasing Nd doping. The magnetic hysteresis properties were determined using a SQUID-VSM magnetometer. The hysteresis curves of Co0.4Cd0.6NdxFe2−xO4 nanoparticles show an increase in coercivity with increasing doping concentration. This enhancement is attributed to the multi-domain behaviour.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"26 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-17DOI: 10.1149/2162-8777/ad5589
Ritesh Verma, Muskan Saini, Ankush Chauhan, Rohit Jasrotia, Rahul Kalia, Leena Bhardwaj and Atul Thakur
Herein, we synthesized Ba0.9-xCa0.1SrxTi0.8Zr0.2O3(x = 0.05, 0.1, 0.15, 0.2) ceramic samples by employing a solid-state reaction technique. The variation of dielectric constant is studied concerning temperature in the range 1 kHz to 1 MHz frequency. Variation of dielectric constant ( ) with temperature reveals that charge carrier dispersion pushes the transition temperature towards higher frequency. Impedance analysis reveals that the maximum value of the imaginary part of impedance i.e., maxima, increases in all samples except for x = 0.05, which shows the opposite behaviour. This behaviour is due to the calcium (Ca2+) substitution at the titanium (Ti4+)-site at low doping concentration of Sr2+ ions. Nyquist plots show the presence of a single semi-circular arc, indicating the contribution of resistance and capacitance through grain boundary. PE hysteresis loops reveal that the values of saturation polarization ( ) decrease with increasing Sr-doping, from 10.989 μC cm−2 to 6.586 μC cm−2, whereas the remnant polarization ( ) shows variable values with increasing Sr-doping.
在此，我们采用固态反应技术合成了 Ba0.9-xCa0.1SrxTi0.8Zr0.2O3（x = 0.05、0.1、0.15、0.2）陶瓷样品。在 1 kHz 至 1 MHz 频率范围内，研究了介电常数随温度的变化。介电常数（ ）随温度的变化表明，电荷载流子的分散将过渡温度推向更高的频率。阻抗分析表明，除了 x = 0.05 样品的阻抗虚部最大值（即最大值）与 x = 0.05 样品的情况相反外，其他所有样品的阻抗虚部最大值都在增加。这种行为是由于在 Sr2+ 离子掺杂浓度较低时，钙（Ca2+）取代了钛（Ti4+）位点。奈奎斯特图显示存在单个半圆弧，表明电阻和电容通过晶界产生。PE 磁滞环显示，饱和极化值（ ）随着 Sr 掺杂量的增加而降低，从 10.989 μC cm-2 降至 6.586 μC cm-2，而残余极化值（ ）则随着 Sr 掺杂量的增加而变化。
{"title":"Electrical and Ferroelectric Properties of Strontium Doped Lead-Free BCZT Ceramics","authors":"Ritesh Verma, Muskan Saini, Ankush Chauhan, Rohit Jasrotia, Rahul Kalia, Leena Bhardwaj and Atul Thakur","doi":"10.1149/2162-8777/ad5589","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5589","url":null,"abstract":"Herein, we synthesized Ba0.9-xCa0.1SrxTi0.8Zr0.2O3(x = 0.05, 0.1, 0.15, 0.2) ceramic samples by employing a solid-state reaction technique. The variation of dielectric constant is studied concerning temperature in the range 1 kHz to 1 MHz frequency. Variation of dielectric constant ( ) with temperature reveals that charge carrier dispersion pushes the transition temperature towards higher frequency. Impedance analysis reveals that the maximum value of the imaginary part of impedance i.e., maxima, increases in all samples except for x = 0.05, which shows the opposite behaviour. This behaviour is due to the calcium (Ca2+) substitution at the titanium (Ti4+)-site at low doping concentration of Sr2+ ions. Nyquist plots show the presence of a single semi-circular arc, indicating the contribution of resistance and capacitance through grain boundary. PE hysteresis loops reveal that the values of saturation polarization ( ) decrease with increasing Sr-doping, from 10.989 μC cm−2 to 6.586 μC cm−2, whereas the remnant polarization ( ) shows variable values with increasing Sr-doping.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"2 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose a novel silicon-on-nothing (SON) structure with an air sub-fin for suppressing the parasitic channel effects on stacked Si nanosheets (NS) gate-all-around (GAA) transistors and a systematic investigation is carried out by 3D TCAD simulation. The SON structure could be fabricated using a backside selective etching technique. The proposed SON NSFETs with a designed air sub-fin structure demonstrates systematic advantages, including 40% off-state current reduction in the sub-channel, and 51.37% promotion for on-off current ratio (ION/IOFF) and 7.04% reduction in effective capacitance. Moreover, there is approximately 21.62% power reduction under the same frequency, and about 16.30% energy reduction under the same delay in 17-stage ring oscillators (ROs). The SON NSFETs-based 6T-SRAM exhibits decreased read time and write time by 14.66% and 67.53%, respectively, compared with those of the conventional GAA NSFETs-based 6T-SRAM.
{"title":"Stacked Si Nanosheets Gate-All-Around Transistors with Silicon-on-Nothing Structure for Suppressing Parasitic Effects and Improving Circuits’ Performance","authors":"Lianlian Li, Lei Cao, Xuexiang Zhang, Qingkun Li, Meihe Zhang, Zhenhua Wu, Guanqiao Sang, Renjie Jiang, Peng Wang, Yunjiao Bao, Qingzhu Zhang, Anyan Du, Huaxiang Yin","doi":"10.1149/2162-8777/ad5106","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5106","url":null,"abstract":"We propose a novel silicon-on-nothing (SON) structure with an air sub-fin for suppressing the parasitic channel effects on stacked Si nanosheets (NS) gate-all-around (GAA) transistors and a systematic investigation is carried out by 3D TCAD simulation. The SON structure could be fabricated using a backside selective etching technique. The proposed SON NSFETs with a designed air sub-fin structure demonstrates systematic advantages, including 40% off-state current reduction in the sub-channel, and 51.37% promotion for on-off current ratio (I<sub>ON</sub>/I<sub>OFF</sub>) and 7.04% reduction in effective capacitance. Moreover, there is approximately 21.62% power reduction under the same frequency, and about 16.30% energy reduction under the same delay in 17-stage ring oscillators (ROs). The SON NSFETs-based 6T-SRAM exhibits decreased read time and write time by 14.66% and 67.53%, respectively, compared with those of the conventional GAA NSFETs-based 6T-SRAM.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"38 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141502832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.1149/2162-8777/ad52c1
Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li and Wen-Hsi Lee
Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.
{"title":"Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses","authors":"Muhammad Aslam, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li and Wen-Hsi Lee","doi":"10.1149/2162-8777/ad52c1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad52c1","url":null,"abstract":"Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative Vth shift, respectively, during the various gate stresses. In particular, the negative Vth shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the Vth can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"27 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.1149/2162-8777/ad52c3
Hai-Rong Zhu, Yan Lei, Zhi-Qiang Gao, Xu-Jie Li, Ping Peng, Yuan Lin
Passivated emitter and rear contact (PERC) solar cells possess the highest photovoltaic market share at present. In industrial production, blistering of the rear silicon nitride (SiNx) passivation layer significantly affects the yield. In order to solve this problem, the relevant processes for manufacturing the PERC solar cells have been carefully studied. It was found that polishing of the silicon wafer rear surface, aluminum (AlOx) thickness, and the deposition process of the SiNx layer will affect the blistering ratio. By optimizing the manufacturing process mentioned above, the blistering ratio of the PERC solar cells has been effectively suppressed. This work not only provides reliable technical support for the yield improvement of the PERC solar cells but also provides some useful reference for the tunnel oxide passivated contact (TOPcon) and back contact (BC) solar cell industrial manufacture.
目前，钝化发射极和后触点（PERC）太阳能电池占据了光伏市场的最高份额。在工业生产中，后氮化硅（SiNx）钝化层的起泡严重影响了产量。为了解决这一问题，我们对制造 PERC 太阳能电池的相关工艺进行了仔细研究。研究发现，硅晶片后表面的抛光、铝（AlOx）厚度和氮化硅（SiNx）层的沉积工艺都会影响起泡率。通过优化上述制造工艺，PERC 太阳能电池的起泡率得到了有效抑制。这项工作不仅为提高 PERC 太阳能电池的良率提供了可靠的技术支持，也为隧道氧化物钝化接触（TOPcon）和背接触（BC）太阳能电池的工业化生产提供了一些有益的参考。
{"title":"Suppressing The Blistering of Silicon Nitride in PERC Solar Cells for High Industrial Yield","authors":"Hai-Rong Zhu, Yan Lei, Zhi-Qiang Gao, Xu-Jie Li, Ping Peng, Yuan Lin","doi":"10.1149/2162-8777/ad52c3","DOIUrl":"https://doi.org/10.1149/2162-8777/ad52c3","url":null,"abstract":"Passivated emitter and rear contact (PERC) solar cells possess the highest photovoltaic market share at present. In industrial production, blistering of the rear silicon nitride (SiN<sub>x</sub>) passivation layer significantly affects the yield. In order to solve this problem, the relevant processes for manufacturing the PERC solar cells have been carefully studied. It was found that polishing of the silicon wafer rear surface, aluminum (AlO<sub>x</sub>) thickness, and the deposition process of the SiN<sub>x</sub> layer will affect the blistering ratio. By optimizing the manufacturing process mentioned above, the blistering ratio of the PERC solar cells has been effectively suppressed. This work not only provides reliable technical support for the yield improvement of the PERC solar cells but also provides some useful reference for the tunnel oxide passivated contact (TOPcon) and back contact (BC) solar cell industrial manufacture.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"13 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.1149/2162-8777/ad52c2
Hafeez Ur Rahman, Khalid. Ayub, Nawaz Sharif, M. Ajmal Khan, Fang Wang, Yuhuai. Liu
Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n++-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm−2 injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.
基于氮化铝镓（AlGaN）的智能、低成本和环保型紫外线-B 发光二极管（UV-B LED）在医疗和农业科学等实际应用中大有可为。更高的效率衰减、低空穴注入效率和高工作电压是氮化镓基紫外-B 发光二极管面临的关键问题。在这项工作中，我们研究了一种智能、清洁的基于氮化铝的紫外-B LED，其发射波长为 284 nm。本文提出了一种方法，利用硅和镁掺杂水平适中、厚度优化的 p-AlGaN/n-AlGaN/n++-AlGaN 隧道结 (TJ) 界面上的载流子传输，通过模拟研究对量子隧道概率进行电动操作。仿真结果表明，与 C-LED（传统 LED）相比，284 nm N 极 AlGaN 基 TJ UV-B LED 成功抑制了 Augur 重组率，并实现了相当高的辐射重组率，这归因于向 MQWs 注入空穴的效果得到了改善。研究发现，在 200 A cm-2 注入电流下，C-LED 的最大 IQE（内部量子效率）为 40%，效率下降 15%，而 TJ-LED 的最大 IQE 为 93%，效率下降 0%。此外，与 C-LED 结构相比，基于 TJ 的 AlGaN LED 发射功率提高了 6 倍。TJ-LED 的发射功率在不同电流密度下呈线性增长，而 C-LED 的发射功率在不同电流密度下呈非线性变化。这归因于基于 N-AlGaN 的 TJ UV-B LED 的 MQW 中较低的奥古重组率。在 200 mA 工作电流下，工作电压从 5.2 V 降至 4.1 V，这归功于 TJ 的厚度和掺杂优化以及接触层中相对较低的铝含量的更好选择。为紫外线-B LED 探索基于氮化铝镓的 N 极 TJ，所展示的工作为在 MOCVD 和 MBE 中外延生长高性能紫外线发射器打开了大门，可用于大量生物医学应用。
{"title":"Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode","authors":"Hafeez Ur Rahman, Khalid. Ayub, Nawaz Sharif, M. Ajmal Khan, Fang Wang, Yuhuai. Liu","doi":"10.1149/2162-8777/ad52c2","DOIUrl":"https://doi.org/10.1149/2162-8777/ad52c2","url":null,"abstract":"Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n<sup>++</sup>-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm<sup>−2</sup> injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"63 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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