Pub Date : 2024-07-18DOI: 10.1149/2162-8777/ad5b88
Fahad I. Danladi, Abhishek Rawat, Abhishek Kumar Adak, Chuzhong Zhang, Vinod K. Sangwan, Riddhi Ananth, Mark C. Hersam, Efstathios I. Meletis and Krishnan Rajeshwar
Unlike the well-studied and technologically advanced Group III-V and Group II-VI compound semiconductor alloys, alloys of ternary metal oxide semiconductors have only recently begun to receive widespread attention. Here, we describe the effect of alkaline earth metal substitution on the optical, electronic, and photoelectrochemical (PEC) properties of copper metavanadate (CuV2O6). As a host, the Cu-V-O compound family presents a versatile framework to develop such composition-property correlations. Alloy compositions of A0.1Cu0.9V2O6 (A = Mg, Ca) photoanodes were synthesized via a time and energy-efficient solution combustion synthesis (SCS) method. The effect of introducing alkaline earth metals (Mg, Ca) on the crystal structure, microstructure, electronic, and optical properties of copper metavanadates was investigated by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), and Raman spectroscopy. The PXRD, TEM, and Raman spectroscopy data demonstrated the polycrystalline powder samples to be mutually soluble, solid solutions of copper and alkaline earth metal metavanadates and not simple mixtures of these compounds. The DRS data showed a systematic decrease in the optical bandgap with Cu incorporation. These trends were corroborated by electronic band structure calculations. Finally, the PEC properties exhibited a strong dependence on the alloy composition, pointing to possible applicability in solar water splitting, heterogeneous photocatalysis, phosphor lighting/displays, and photovoltaic devices.
{"title":"Synthesis and Tuning of Electronic, Optical, and Photoelectrochemical Properties of Copper Metavanadate Alloys via Alkaline Earth Metal Substitution","authors":"Fahad I. Danladi, Abhishek Rawat, Abhishek Kumar Adak, Chuzhong Zhang, Vinod K. Sangwan, Riddhi Ananth, Mark C. Hersam, Efstathios I. Meletis and Krishnan Rajeshwar","doi":"10.1149/2162-8777/ad5b88","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5b88","url":null,"abstract":"Unlike the well-studied and technologically advanced Group III-V and Group II-VI compound semiconductor alloys, alloys of ternary metal oxide semiconductors have only recently begun to receive widespread attention. Here, we describe the effect of alkaline earth metal substitution on the optical, electronic, and photoelectrochemical (PEC) properties of copper metavanadate (CuV2O6). As a host, the Cu-V-O compound family presents a versatile framework to develop such composition-property correlations. Alloy compositions of A0.1Cu0.9V2O6 (A = Mg, Ca) photoanodes were synthesized via a time and energy-efficient solution combustion synthesis (SCS) method. The effect of introducing alkaline earth metals (Mg, Ca) on the crystal structure, microstructure, electronic, and optical properties of copper metavanadates was investigated by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), and Raman spectroscopy. The PXRD, TEM, and Raman spectroscopy data demonstrated the polycrystalline powder samples to be mutually soluble, solid solutions of copper and alkaline earth metal metavanadates and not simple mixtures of these compounds. The DRS data showed a systematic decrease in the optical bandgap with Cu incorporation. These trends were corroborated by electronic band structure calculations. Finally, the PEC properties exhibited a strong dependence on the alloy composition, pointing to possible applicability in solar water splitting, heterogeneous photocatalysis, phosphor lighting/displays, and photovoltaic devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-18DOI: 10.1149/2162-8777/ad60ff
Yangyang Guo, Jing Sun, Cheng Wang, Yanni Yang and Junjie Wang
The atomic force microscope (AFM) has been widely used for fabricating the nanoscale oxide ribbons on various materials surface. Herein, we first conducted local anodic oxidation (LAO) lithography on two-dimensional nanomaterial (2D), i.e. multilayer MoS2, using AFM. The correlation of patterning behavior on the MoS2 flakes between the lithography conditions was investigated. The height and full width half maximum (FWHM) increase linearly with increasing tip voltage, even at different tip speeds, which is consistent with the results obtained from the Cabrera-Mott oxidation theory. The size of the clear relation decreases linearly with increasing tip speed, indicating that longer tip writing patterns result in more oxidation. The formation mechanism of the patterned oxide lines is presented along with LAO reaction processes.The final LAO lithography products have been demonstrated to be MoO2 and MoO3 by micro-Raman spectroscopy. These results show that LAO lithography using AFM is an effective technique for nanofabrication of nanodevices.
{"title":"Creation and Characterization of Nanoscale Ribbons on MoS2 by Atomic Force Microscope Nanolithography","authors":"Yangyang Guo, Jing Sun, Cheng Wang, Yanni Yang and Junjie Wang","doi":"10.1149/2162-8777/ad60ff","DOIUrl":"https://doi.org/10.1149/2162-8777/ad60ff","url":null,"abstract":"The atomic force microscope (AFM) has been widely used for fabricating the nanoscale oxide ribbons on various materials surface. Herein, we first conducted local anodic oxidation (LAO) lithography on two-dimensional nanomaterial (2D), i.e. multilayer MoS2, using AFM. The correlation of patterning behavior on the MoS2 flakes between the lithography conditions was investigated. The height and full width half maximum (FWHM) increase linearly with increasing tip voltage, even at different tip speeds, which is consistent with the results obtained from the Cabrera-Mott oxidation theory. The size of the clear relation decreases linearly with increasing tip speed, indicating that longer tip writing patterns result in more oxidation. The formation mechanism of the patterned oxide lines is presented along with LAO reaction processes.The final LAO lithography products have been demonstrated to be MoO2 and MoO3 by micro-Raman spectroscopy. These results show that LAO lithography using AFM is an effective technique for nanofabrication of nanodevices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-16DOI: 10.1149/2162-8777/ad5fb8
Manal M. Alkhamisi
In this work, ZnSnO3 (ZTO3) and Li-doped ZTO3 thin films were synthesized on glass slides by a cost-effective nebulizer spray pyrolysis procedure. The X-ray diffraction analysis revealed that the ZTO3 and Li-doped ZTO3 thin films possessed a rhombohedral structure. The structural indices (grain size, dislocation density, lattice strain) of the ZTO3 and Li-doped ZTO3 thin films were computed. The morphology characteristics of the ZTO3 and Li-doped ZTO3 thin films were observed by field emission scanning electron microscopy. The inspected films display uniform and homogeneous surfaces. The optical transmittance, T, and reflectance, R, of the ZTO3 and Li-doped ZTO3 thin films were recorded using a double-beam spectrophotometer to investigate the optical characteristics of these layers. The refractive index of the ZTO3 and Li-doped ZTO3 thin films was enhanced via the Li content increase. Moreover, Tauc’s plots demonstrated that the energy gap of the ZTO3 and Li-doped ZTO3 thin films was reduced from 3.85 eV to 3.08 eV by boosting the Li doping content. Moreover, the increase in Li content produces an enhancement in the optoelectrical indices (optical resistivity, optical carrier concentration, optical mobility, plasms frequency, and optical conductivity) of the ZTO3 and Li-doped ZTO3 thin films. The nonlinear optical indices of the ZTO3 and Li-doped ZTO3 thin films were deduced, and it was noted that Li content boosted the nonlinear optical indices of these layers. All the ZTO3 and Li-doped ZTO3 thin films displayed n-type semiconducting properties by the hot probe equipment.
{"title":"Effect of Li Doping on Structural, Optical, and Optoelectrical Characteristics of ZnSnO3 Thin Films Prepared by Nebulizer Spray Pyrolysis","authors":"Manal M. Alkhamisi","doi":"10.1149/2162-8777/ad5fb8","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5fb8","url":null,"abstract":"In this work, ZnSnO3 (ZTO3) and Li-doped ZTO3 thin films were synthesized on glass slides by a cost-effective nebulizer spray pyrolysis procedure. The X-ray diffraction analysis revealed that the ZTO3 and Li-doped ZTO3 thin films possessed a rhombohedral structure. The structural indices (grain size, dislocation density, lattice strain) of the ZTO3 and Li-doped ZTO3 thin films were computed. The morphology characteristics of the ZTO3 and Li-doped ZTO3 thin films were observed by field emission scanning electron microscopy. The inspected films display uniform and homogeneous surfaces. The optical transmittance, T, and reflectance, R, of the ZTO3 and Li-doped ZTO3 thin films were recorded using a double-beam spectrophotometer to investigate the optical characteristics of these layers. The refractive index of the ZTO3 and Li-doped ZTO3 thin films was enhanced via the Li content increase. Moreover, Tauc’s plots demonstrated that the energy gap of the ZTO3 and Li-doped ZTO3 thin films was reduced from 3.85 eV to 3.08 eV by boosting the Li doping content. Moreover, the increase in Li content produces an enhancement in the optoelectrical indices (optical resistivity, optical carrier concentration, optical mobility, plasms frequency, and optical conductivity) of the ZTO3 and Li-doped ZTO3 thin films. The nonlinear optical indices of the ZTO3 and Li-doped ZTO3 thin films were deduced, and it was noted that Li content boosted the nonlinear optical indices of these layers. All the ZTO3 and Li-doped ZTO3 thin films displayed n-type semiconducting properties by the hot probe equipment.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141738344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fast, sensitive, and low-cost high-performance detectors have gradually become an indispensable tool for people to keep healthy, and sensors are the key devices of detection equipment. In this work, a ZnO nanocrystal modified carbon fiber electrode was prepared using a hydrothermal method, and on this basis, a galvanostatic point deposition method was used to load copper nanoparticles to prepare a sensor electrode. Scanning electron microscopy and X-ray diffraction were used to comprehensively analyze composition, morphology, and environmental adaptability of the prepared electrodes. The DPV test was used to verify the enhanced effect of ZnO nanorods on neurotransmitter detection. The ZnO/CF showed an obvious electrical signal (0.22 V, 4×10-5A) in the detection of dopamine (DA) solution, and the Cu-NPs/ZnO/CF also showed excellent detection results in the glucose detection experiment., providing two excellent examples for the development of low-cost electrochemical sensors. The electrodes can specifically detect DA in the presence of ascorbic acid and uric acid, and the detection limit of the electrode for detecting DA is about 0.4 μM. In addition, the Cu-NPs/ZnO/CF electrode successfully realized the enzyme-free detection of glucose, and the detection limit could reach 0.5 μM.
快速、灵敏、低成本的高性能检测仪已逐渐成为人们保持健康不可或缺的工具，而传感器则是检测设备中的关键器件。本研究采用水热法制备了氧化锌纳米晶改性碳纤维电极，并在此基础上采用电静电点沉积法负载纳米铜粒子制备了传感器电极。利用扫描电子显微镜和 X 射线衍射技术全面分析了所制备电极的成分、形貌和环境适应性。利用 DPV 试验验证了氧化锌纳米棒对神经递质检测的增强效果。ZnO/CF 在多巴胺（DA）溶液检测中显示出明显的电信号（0.22 V，4×10-5A），Cu-NPs/ZnO/CF 在葡萄糖检测实验中也显示出良好的检测效果，为开发低成本电化学传感器提供了两个很好的范例。该电极能在抗坏血酸和尿酸存在的情况下特异性地检测 DA，检测 DA 的电极检测限约为 0.4 μM。此外，Cu-NPs/ZnO/CF 电极还成功实现了葡萄糖的无酶检测，检测限达到 0.5 μM。
{"title":"Convenient and Accurate Detection of Dopamine and Glucose by Modifying Carbon Fiber Electrodes","authors":"Fengjin Han, Xiaoyan Zhang, Zijian Li, Haowei Sun, Hua Yuan, Xiaoyu Huang","doi":"10.1149/2162-8777/ad628b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad628b","url":null,"abstract":"\u0000 Fast, sensitive, and low-cost high-performance detectors have gradually become an indispensable tool for people to keep healthy, and sensors are the key devices of detection equipment. In this work, a ZnO nanocrystal modified carbon fiber electrode was prepared using a hydrothermal method, and on this basis, a galvanostatic point deposition method was used to load copper nanoparticles to prepare a sensor electrode. Scanning electron microscopy and X-ray diffraction were used to comprehensively analyze composition, morphology, and environmental adaptability of the prepared electrodes. The DPV test was used to verify the enhanced effect of ZnO nanorods on neurotransmitter detection. The ZnO/CF showed an obvious electrical signal (0.22 V, 4×10-5A) in the detection of dopamine (DA) solution, and the Cu-NPs/ZnO/CF also showed excellent detection results in the glucose detection experiment., providing two excellent examples for the development of low-cost electrochemical sensors. The electrodes can specifically detect DA in the presence of ascorbic acid and uric acid, and the detection limit of the electrode for detecting DA is about 0.4 μM. In addition, the Cu-NPs/ZnO/CF electrode successfully realized the enzyme-free detection of glucose, and the detection limit could reach 0.5 μM.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.1149/2162-8777/ad5588
R. Pavithra Guru
Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.
基于先进的现代半导体技术的电子器件，主要侧重于设计更轻、更快、更经济的解决方案，以满足现代数字电子技术的规格要求。最大限度缩小 MOSFET 器件尺寸的一些缺点包括栅极绝缘体缩放、短沟道效应 (SCE)、浅结技术和 MOSFET 器件的离态漏电流。此外，传统的二氧化硅（SiO2）电介质材料的最大电容受到限制，而且由于厚度问题，隧道电流泄漏也会增加。因此，需要一种高介电材料来替代二氧化硅，以克服上述问题。在这个模型中，N 型 MOSFET 是基于双层高 K 介电介质设计的，其厚度根据最大电容和最小阈值电压进行了优化。在 2.5 v 漏极电压下，HfO2、Al2O3 和 HfO2+Si3N4 的漏极电流分别为 1.87 mA、1.51 mA 和 3.54 mA。单层和双层 MOSFET 的读写延迟分别为 70.84 ps、82.64 ps、95.21 ps 和 10.24 ps、15.47 ps、21.74 ps。因此，与单层介质 MOSFET 相比，设计和仿真的野马优化 N-MOSFET 双层高 k 介质具有更好的电气特性。
{"title":"Design and Simulation of Bi-Layer Optimized High K- Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics","authors":"R. Pavithra Guru","doi":"10.1149/2162-8777/ad5588","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5588","url":null,"abstract":"Electronic devices for advanced modern semiconductor based technology, mainly focus on the design regarding lighter, faster and more affordable solutions to meet the specifications of modern digital electronics. Some of the drawbacks for minimizing device size in MOSFET include gate insulator scaling, Short-Channel Effects (SCEs), shallow junction technology and off-state leakage current in MOSFET devices. In addition, the traditional SiO2 as a dielectric material contains restricted maximum capacitance as well as increased tunnel current leakage due to the thickness. Hence, a High-k dielectric is required to replace SiO2 to overcome the mentioned issues. In this model, the N-type MOSFET is designed based on the bi-layer high K-dielectric medium with optimized thickness according to the maximum capacitance and minimum threshold voltage, which are implemented on VLSI based applications such as 6 T SRAM for evaluating the performance. The drain current of HfO2, Al2O3 and HfO2+Si3N4 for 2.5 v drain voltage are 1.87 mA, 1.51 mA and 3.54 mA. Then, the read and write delay of the single and bi-layer MOSFET are 70.84 ps, 82.64 ps, 95.21 ps and 10.24 ps, 15.47 ps, 21.74 ps. Thus, the designed and simulated bi-layer optimized high k- dielectric medium for N-MOSFET with wild horse optimization performs better electrical characteristics than the single layer dielectric medium MOSFET.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141613608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW/cm2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.
{"title":"18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal-Shaped Multi-Finger Structure","authors":"Yu-Jun Lai, Dian-Ying Wu, Ya-Han Yang, Yu-Chen Liu, Cheng-Yeu Wu, Meng-Chyi Wu","doi":"10.1149/2162-8777/ad620e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad620e","url":null,"abstract":"\u0000 In this article, we investigate the effects of gate and drain field plates and isosceles trapezoidal-shaped multi-finger structures on the characteristics of high current p-GaN-gated high-electron-mobility transistors (HEMTs). By optimizing the lengths of gate and drain field plates, the p-GaN-gated HEMTs with 200 μm have a breakdown voltage of 1893 V, a specific on-resistance of 7.0 mΩ-cm2, and a Baliga figure of merit (BFOM) value of 511 MW/cm2. Using the optimized isosceles trapezoidal-shaped multi-finger metallization on the source and drain, the p-GaN-gated HEMT with a 100 mm gate width can reach a current of 2.3 A. Combining all the optimum parameters of field plates and isosceles trapezoidal-shaped multi-finger, the fabricated 600 mm p-GaN-gated HEMT exhibits an output current of 18 A, an on-resistance of 0.7 Ω, and a breakdown voltage of 1020 V. Furthermore, the device also exhibits good thermal stability at high temperatures. These results demonstrate the potential and advantages of p-GaN-gated HEMT for power applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.1149/2162-8777/ad620d
H. A. Alburaih, M. Zia Ur Rehman, M. U. Saeed, N. A. Noor, M. S. H.-E, Dr. Yasir Saeed
The results show that all the studied semiconductors have indirect bandgap while under the strain of (−8% to +8%), the bandgap has changed differently. Projected density of states revealed that CBM and VBM are mainly contributed by p-orbital and d-orbital of Cu-atom respectively in the case of all Copper halides (CuCl, CuBr, and CuI). Similarly, in the case of Silver halides (AgCl, AgBr, and AgI) CBM and VBM are mainly contributed by p- orbital and d-orbital of Ag-atom respectively. Phonon band structures of all unstrained monolayers are thermodynamically stable. The computed real part ε 1 (ω) and the imaginary part ε 2 (ω) of dielectric function revealed that CuCl and CuBr are suitable for the development of devices that may work in the infrared range while other materials such as CuI, AgCl, AgBr, and AgI are suitable for the development of devices that may work in the visible range. Both E V BM and E CBM in CuCl, CuBr, CuI, AgCl, and AgBr (ML) attain favorable positions that’s why these materials are appropriate for water splitting at pH=0 while AgI (ML) is suitable for the reduction of water but not for oxidati
结果表明，所有研究的半导体都具有间接带隙，而在应变（-8% 到 +8%）下，带隙发生了不同的变化。投影状态密度显示，在所有卤化铜（CuCl、CuBr 和 CuI）中，CBM 和 VBM 主要分别由铜原子的 p 轨道和 d 轨道贡献。同样，对于卤化银（AgCl、AgBr 和 AgI），CBM 和 VBM 分别主要由 Ag 原子的 p 轨道和 d 轨道贡献。所有未受约束单层的声带结构在热力学上都是稳定的。计算得出的介电函数实部ε 1 (ω)和虚部ε 2 (ω)表明，CuCl 和 CuBr 适合开发可在红外范围工作的器件，而其他材料如 CuI、AgCl、AgBr 和 AgI 则适合开发可在可见光范围工作的器件。CuCl、CuBr、CuI、AgCl 和 AgBr（ML）中的 E V BM 和 E CBM 都达到了有利的位置，这就是为什么这些材料适合在 pH=0 的条件下进行水分裂，而 AgI（ML）适合还原水，但不适合氧化水。
{"title":"A DFT Study of Optoelectronic and Photo-Catalytic Properties in 2D Copper and Silver Halides through Strain Engineering","authors":"H. A. Alburaih, M. Zia Ur Rehman, M. U. Saeed, N. A. Noor, M. S. H.-E, Dr. Yasir Saeed","doi":"10.1149/2162-8777/ad620d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad620d","url":null,"abstract":"\u0000 The results show that all the studied semiconductors have indirect bandgap while under the strain of (−8% to +8%), the bandgap has changed differently. Projected density of states revealed that CBM and VBM are mainly contributed by p-orbital and d-orbital of Cu-atom respectively in the case of all Copper halides (CuCl, CuBr, and CuI). Similarly, in the case of Silver halides (AgCl, AgBr, and AgI) CBM and VBM are mainly contributed by p- orbital and d-orbital of Ag-atom respectively. Phonon band structures of all unstrained monolayers are thermodynamically stable. The computed real part ε 1 (ω) and the imaginary part ε 2 (ω) of dielectric function revealed that CuCl and CuBr are suitable for the development of devices that may work in the infrared range while other materials such as CuI, AgCl, AgBr, and AgI are suitable for the development of devices that may work in the visible range. Both E V BM and E CBM in CuCl, CuBr, CuI, AgCl, and AgBr (ML) attain favorable positions that’s why these materials are appropriate for water splitting at pH=0 while AgI (ML) is suitable for the reduction of water but not for oxidati","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-11DOI: 10.1149/2162-8777/ad620f
Guanhua Xu, xudong qiu, Xiaoguang Li
Highly selective conversion of CO2 into CO molecules remains a major challenge in electrocatalytic CO2 reduction reactions, and metallic silver-based materials have great potential. However, the selectivity and activity of traditional silver (Ag)-based materials cannot reach the desired level, and the development of new Ag-based materials has become a hot research topic. Here, novel ag-glomerated spore-shaped Ag nanomaterials are reported for the efficient reduction of CO2 to CO. The unique nanostructures endowed with larger specific surface area, and the spore-like dispersed Ag nanoparticles (NPs) have more unsaturated Ag sites, which endowed the catalysts with higher intrinsic activity. Electrochemical tests show that spore-like Ag can obtain a Faraday efficiency (FE) of 95.6% at -1 V vs. RHE, which is much higher than that of Ag nanowires (NWs) (73%) and ordinary Ag NPs (83%) synthesized in the same period. By using the three different morphologies of Ag synthesized as a research platform and statistically comparing the FE in the corresponding voltage interval, we obtained the influence of morphology effect on the selectivity of CO product production by electrocatalytic CO2 production over Ag-based catalysts, which can be further used as a guideline for catalyst development.
高选择性地将 CO2 转化为 CO 分子仍然是电催化 CO2 还原反应中的一大挑战，而金属银基材料具有巨大的潜力。然而，传统银基材料的选择性和活性无法达到理想水平，开发新型银基材料已成为研究热点。本文报道了新型琼脂团孢状银纳米材料，用于将 CO2 高效还原为 CO。这种独特的纳米结构具有更大的比表面积，孢子状分散的银纳米粒子（NPs）具有更多的不饱和银位点，从而赋予催化剂更高的内在活性。电化学测试表明，孢子状银在-1 V对RHE的电压下可获得95.6%的法拉第效率（FE），远高于同期合成的银纳米线（NWs）（73%）和普通银纳米粒子（NPs）（83%）。我们以合成的三种不同形态的 Ag 为研究平台，统计比较了相应电压区间的 FE，得到了形态效应对 Ag 基催化剂电催化生产 CO2 产物选择性的影响，可进一步作为催化剂开发的指导原则。
{"title":"Modulating the Electrocatalytic CO2-CO Performance by Ag Morphology","authors":"Guanhua Xu, xudong qiu, Xiaoguang Li","doi":"10.1149/2162-8777/ad620f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad620f","url":null,"abstract":"\u0000 Highly selective conversion of CO2 into CO molecules remains a major challenge in electrocatalytic CO2 reduction reactions, and metallic silver-based materials have great potential. However, the selectivity and activity of traditional silver (Ag)-based materials cannot reach the desired level, and the development of new Ag-based materials has become a hot research topic. Here, novel ag-glomerated spore-shaped Ag nanomaterials are reported for the efficient reduction of CO2 to CO. The unique nanostructures endowed with larger specific surface area, and the spore-like dispersed Ag nanoparticles (NPs) have more unsaturated Ag sites, which endowed the catalysts with higher intrinsic activity. Electrochemical tests show that spore-like Ag can obtain a Faraday efficiency (FE) of 95.6% at -1 V vs. RHE, which is much higher than that of Ag nanowires (NWs) (73%) and ordinary Ag NPs (83%) synthesized in the same period. By using the three different morphologies of Ag synthesized as a research platform and statistically comparing the FE in the corresponding voltage interval, we obtained the influence of morphology effect on the selectivity of CO product production by electrocatalytic CO2 production over Ag-based catalysts, which can be further used as a guideline for catalyst development.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141658207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1149/2162-8777/ad6183
Z. Heiba, Noura M. Farag, Hassan Elshemy, Essam E. Ali, Ali Badawi, Mohamed Bakr Mohamed
The performance of the structural, linear/ nonlinear optical and photoluminescent properties of CuCo2O4 and ZnMn2O4 alloying was investigated. (1-x)CuCo2O4/(x)ZnMn2O4 (x=0, 0.10, 0.15, 0.2) samples were prepared by the sol-gel and hydrothermal procedures. Synchrotron X-ray diffraction measurements were employed to investigate the structural and microstructural properties applying the Rietveld refinement method. Fourier transform infraed and Raman techniques were applied to explore the structures’ variation and chemical bonding of the obtained phases. Ultraviolet–visible diffuse reflectance spectroscopy measurements were collected to explore the optical properties. The optical band gap values were determined using the Kubelka-Munk method. All samples exhibited two band gaps in the visible-NIR regions. Upon composing with ZnMn2O4, the band gaps of CuCo2O4 declined for x=0.1 and 0.15, followed by an increase at x=0.2. The possible electronic band structure of the samples and the photoluminescent performance of the prepared samples was investigated. The observed PL patterns manifest wide and asymmetrical emissions. The CIE chromaticity diagram for all samples was plotted. The obtained findings of (1-x)CuCo2O4/(x)ZnMn2O4 nominate their efficient role in optical device fabrication and photocatalyst applications.
{"title":"Exploring the Structural, Optical and Photoluminescence Performances of CuCo2O4 and ZnMn2O4 Alloying","authors":"Z. Heiba, Noura M. Farag, Hassan Elshemy, Essam E. Ali, Ali Badawi, Mohamed Bakr Mohamed","doi":"10.1149/2162-8777/ad6183","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6183","url":null,"abstract":"\u0000 The performance of the structural, linear/ nonlinear optical and photoluminescent properties of CuCo2O4 and ZnMn2O4 alloying was investigated. (1-x)CuCo2O4/(x)ZnMn2O4 (x=0, 0.10, 0.15, 0.2) samples were prepared by the sol-gel and hydrothermal procedures. Synchrotron X-ray diffraction measurements were employed to investigate the structural and microstructural properties applying the Rietveld refinement method. Fourier transform infraed and Raman techniques were applied to explore the structures’ variation and chemical bonding of the obtained phases. Ultraviolet–visible diffuse reflectance spectroscopy measurements were collected to explore the optical properties. The optical band gap values were determined using the Kubelka-Munk method. All samples exhibited two band gaps in the visible-NIR regions. Upon composing with ZnMn2O4, the band gaps of CuCo2O4 declined for x=0.1 and 0.15, followed by an increase at x=0.2. The possible electronic band structure of the samples and the photoluminescent performance of the prepared samples was investigated. The observed PL patterns manifest wide and asymmetrical emissions. The CIE chromaticity diagram for all samples was plotted. The obtained findings of (1-x)CuCo2O4/(x)ZnMn2O4 nominate their efficient role in optical device fabrication and photocatalyst applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141661246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-10DOI: 10.1149/2162-8777/ad6182
Muhammad Imran, Maqsood Ahmad, Aneeqa Yasmeen, A. Afzal, M. Iqbal, Sohail Mumtaz, Muhammad Zahir Iqbal, Kareem Yusuf, Shaik Abdul Munnaf, Muhammad Azhar Mumtaz, M. Waris, Muhammad Azeem
In this work, we present a highly effective electrode material (AgCoS@MXene) for supercapattery device application that is produced hydrothermally. We examined the morphology and crystallinity of the synthesized materials using SEM and XRD studies. The synthesized compounds were subjected to a thorough electrochemical performance study employing a three-electrode configuration in a 1 M KOH electrolyte. AgCoS@MXene demonstrated an exceptional Qs of 943.22 C/g at a current density of 2.0 A/g. We formed a supercapattery device (AgCoS@MXene//AC) with AgCoS@MXene as the positive electrode and activated carbon (AC) as the negative electrode. The supercapattery device was demonstrated to have a high specific capacity of 315.22 C/g, a power density of 1275 W/kg, and an energy density of 35.94 Wh/kg. In addition, 5000 charging and discharging cycles were used to assess the device's long-term longevity. The findings indicated that the device preserved nearly 82% of its initial capacity. Besides, the hybrid electrode is used for the electrocatalytic activity for the oxygen reduction reaction
{"title":"Synergistic Advancements in Battery-Grade Energy Storage: AgCoS@MXene@AC Hybrid Electrode Material as an Enhanced Electrocatalyst for Oxygen Reduction Reaction","authors":"Muhammad Imran, Maqsood Ahmad, Aneeqa Yasmeen, A. Afzal, M. Iqbal, Sohail Mumtaz, Muhammad Zahir Iqbal, Kareem Yusuf, Shaik Abdul Munnaf, Muhammad Azhar Mumtaz, M. Waris, Muhammad Azeem","doi":"10.1149/2162-8777/ad6182","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6182","url":null,"abstract":"\u0000 In this work, we present a highly effective electrode material (AgCoS@MXene) for supercapattery device application that is produced hydrothermally. We examined the morphology and crystallinity of the synthesized materials using SEM and XRD studies. The synthesized compounds were subjected to a thorough electrochemical performance study employing a three-electrode configuration in a 1 M KOH electrolyte. AgCoS@MXene demonstrated an exceptional Qs of 943.22 C/g at a current density of 2.0 A/g. We formed a supercapattery device (AgCoS@MXene//AC) with AgCoS@MXene as the positive electrode and activated carbon (AC) as the negative electrode. The supercapattery device was demonstrated to have a high specific capacity of 315.22 C/g, a power density of 1275 W/kg, and an energy density of 35.94 Wh/kg. In addition, 5000 charging and discharging cycles were used to assess the device's long-term longevity. The findings indicated that the device preserved nearly 82% of its initial capacity. Besides, the hybrid electrode is used for the electrocatalytic activity for the oxygen reduction reaction","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141661051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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