The internal electric field distribution is one key design consideration, which affects the charge collection efficiency in silicon drift detectors (SDDs). The internal electrostatic potential distributions along SDD front and back surfaces, which are determined by the applied voltages at cathode electrodes, define the final internal field distribution. Front-back bias coupling leads to the complexity of electrode structure design and voltage tuning. Device simulation is performed to investigate the performance of SDDs with varied bias voltages. When the cathode bias is −40 V with the first ring bias of −15 V and the outermost ring bias of −80 V, the detector is biased with a uniform electric field distribution, favorable electron drift trajectories. The simulation results provide new insight into the influence of internal electric field and electron drift trajectories on the charge collection efficiency. According to the analysis of simulation results, a 2000 × 2000 μm area concentric silicon drift detector was designed and fabricated. The electrical characteristics of the designed detectors were studied to show the validity of the proposed device design methodology. The internal electric field distribution and electron drift trajectories can be tuned to improve the charge collection efficiency.
{"title":"Insight into the Impact of Electron Drift Trajectory on Charge Collection in Silicon Drift Detector","authors":"Rongrong Guo, Yujia Peng, Huixiang Huang, Chih-Ching Chen, Tsung-Yi Chen","doi":"10.1149/2162-8777/ad7401","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7401","url":null,"abstract":"The internal electric field distribution is one key design consideration, which affects the charge collection efficiency in silicon drift detectors (SDDs). The internal electrostatic potential distributions along SDD front and back surfaces, which are determined by the applied voltages at cathode electrodes, define the final internal field distribution. Front-back bias coupling leads to the complexity of electrode structure design and voltage tuning. Device simulation is performed to investigate the performance of SDDs with varied bias voltages. When the cathode bias is −40 V with the first ring bias of −15 V and the outermost ring bias of −80 V, the detector is biased with a uniform electric field distribution, favorable electron drift trajectories. The simulation results provide new insight into the influence of internal electric field and electron drift trajectories on the charge collection efficiency. According to the analysis of simulation results, a 2000 × 2000 μm area concentric silicon drift detector was designed and fabricated. The electrical characteristics of the designed detectors were studied to show the validity of the proposed device design methodology. The internal electric field distribution and electron drift trajectories can be tuned to improve the charge collection efficiency.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1149/2162-8777/ad7402
Min Chen, Shuxin Chen, Yaxuan Ji, Kai Zhang
Negative permittivity in percolation composites garnered significant interest due to its promising implications for practical applications. This study demonstrates that the percolation threshold of the polyaniline(PANI)/epoxy resin composite falls within the range of 40 wt% to 50 wt%. Beyond this percolation threshold, the composites exhibit a corresponding negative dielectric behavior. Notably, at a high PANI content level of 90 wt%, the permittivity exhibits characteristics akin to Lorentz resonance type behavior. This research presents an effective approach to exhibit tunable low-frequency negative permittivity through Lorentz resonance.
{"title":"Communication—Tunable Lorentz-Type Negative Permittivity of PANI/Epoxy Resin Composites in the Frequency Range from 3 kHz to 1 MHz","authors":"Min Chen, Shuxin Chen, Yaxuan Ji, Kai Zhang","doi":"10.1149/2162-8777/ad7402","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7402","url":null,"abstract":"Negative permittivity in percolation composites garnered significant interest due to its promising implications for practical applications. This study demonstrates that the percolation threshold of the polyaniline(PANI)/epoxy resin composite falls within the range of 40 wt% to 50 wt%. Beyond this percolation threshold, the composites exhibit a corresponding negative dielectric behavior. Notably, at a high PANI content level of 90 wt%, the permittivity exhibits characteristics akin to Lorentz resonance type behavior. This research presents an effective approach to exhibit tunable low-frequency negative permittivity through Lorentz resonance.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"34 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f0
Padmanaban B, Hariharasuthan R, Saravanan P, SenthilKannan K
Oxalic acid dihydrate (OADH) crystal was grown by slow evaporation solution method, milled to micro-OADH, impacted with shocked 50 pulses and harvested in a 16-day period. The 2 MPa pressure with 2.2 Mach number of 864 K temperature specifies the product as shocked 50 scaled OADH. Single crystalline X-ray diffraction of OADH macro are as specified with P21/n as space group with monoclinic as the crystal system and shocked 50 scaled OADH are with lattice constants; the % of elements of OADH specimen are confirmed by theory and practice. The dielectric constant of OADH is higher at lower frequency values by space charge polarization. OADH of all scales are of the negative photo-conductivity type. The influx data of OADH of three types of scaling are identified as better electronic filter. The micro-OADH is confirmed by the scanning electron microscopy analysis as 10 micrometer scaling without any flaws. The Fluorescence (FL) study shows bluish FL emission for all samples of OADH; sensitivity is 8.88>6.6>2.2 for shocked 50-OADH, micro-OADH, macro-OADH. The Miller’s indices of (101) profile for RGB display is shown without as well with recursive colors of OADH.
{"title":"Growth, Characterizations of Oxalic Acid Di-Hydrate Crystals of Pure, Milled, Shocked Impact of 50 Scaling for Electronic, Photonic, Display and Sensor Usefulness by Theory and Practice","authors":"Padmanaban B, Hariharasuthan R, Saravanan P, SenthilKannan K","doi":"10.1149/2162-8777/ad71f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71f0","url":null,"abstract":"Oxalic acid dihydrate (OADH) crystal was grown by slow evaporation solution method, milled to micro-OADH, impacted with shocked 50 pulses and harvested in a 16-day period. The 2 MPa pressure with 2.2 Mach number of 864 K temperature specifies the product as shocked 50 scaled OADH. Single crystalline X-ray diffraction of OADH macro are as specified with P2<sub>1</sub>/n as space group with monoclinic as the crystal system and shocked 50 scaled OADH are with lattice constants; the % of elements of OADH specimen are confirmed by theory and practice. The dielectric constant of OADH is higher at lower frequency values by space charge polarization. OADH of all scales are of the negative photo-conductivity type. The influx data of OADH of three types of scaling are identified as better electronic filter. The micro-OADH is confirmed by the scanning electron microscopy analysis as 10 micrometer scaling without any flaws. The Fluorescence (FL) study shows bluish FL emission for all samples of OADH; sensitivity is 8.88>6.6>2.2 for shocked 50-OADH, micro-OADH, macro-OADH. The Miller’s indices of (101) profile for RGB display is shown without as well with recursive colors of OADH.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"41 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f1
Zein K. Heiba, Mohamed Bakr Mohamed, Ali Badawi
We investigated the effects of Ni-doping amount on the structural, magnetic, and shielding properties of nano Er2O3. Nano Er2−xNixO3 (x = 0, 0.05, 0.1, 0.15) samples were fabricated by a pechini scheme and characterized via X-ray diffraction. Rietveld refinement was used to discover the distribution of cations on the two crystallographic sites. Cation ordering in the two nonequivalent sites of the structure and the variation of the oxygen bond lengths of octahedra with the composition x were also investigated. A consistent reduction in the average bond lengths of (Er/Ni)O6 octahedra around 8b and 24d as x progresses was observed. Average crystallite size reduced while average lattice micro-strain increased with increasing Ni doping. The correlation between magnetization and temperature for all samples under a magnetic field of 200 Oe was studied. Curie-Weiss law was applied to find the magnetic moments and the types of magnetic structure. The μ