The internal electric field distribution is one key design consideration, which affects the charge collection efficiency in silicon drift detectors (SDDs). The internal electrostatic potential distributions along SDD front and back surfaces, which are determined by the applied voltages at cathode electrodes, define the final internal field distribution. Front-back bias coupling leads to the complexity of electrode structure design and voltage tuning. Device simulation is performed to investigate the performance of SDDs with varied bias voltages. When the cathode bias is −40 V with the first ring bias of −15 V and the outermost ring bias of −80 V, the detector is biased with a uniform electric field distribution, favorable electron drift trajectories. The simulation results provide new insight into the influence of internal electric field and electron drift trajectories on the charge collection efficiency. According to the analysis of simulation results, a 2000 × 2000 μm area concentric silicon drift detector was designed and fabricated. The electrical characteristics of the designed detectors were studied to show the validity of the proposed device design methodology. The internal electric field distribution and electron drift trajectories can be tuned to improve the charge collection efficiency.
{"title":"Insight into the Impact of Electron Drift Trajectory on Charge Collection in Silicon Drift Detector","authors":"Rongrong Guo, Yujia Peng, Huixiang Huang, Chih-Ching Chen, Tsung-Yi Chen","doi":"10.1149/2162-8777/ad7401","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7401","url":null,"abstract":"The internal electric field distribution is one key design consideration, which affects the charge collection efficiency in silicon drift detectors (SDDs). The internal electrostatic potential distributions along SDD front and back surfaces, which are determined by the applied voltages at cathode electrodes, define the final internal field distribution. Front-back bias coupling leads to the complexity of electrode structure design and voltage tuning. Device simulation is performed to investigate the performance of SDDs with varied bias voltages. When the cathode bias is −40 V with the first ring bias of −15 V and the outermost ring bias of −80 V, the detector is biased with a uniform electric field distribution, favorable electron drift trajectories. The simulation results provide new insight into the influence of internal electric field and electron drift trajectories on the charge collection efficiency. According to the analysis of simulation results, a 2000 × 2000 μm area concentric silicon drift detector was designed and fabricated. The electrical characteristics of the designed detectors were studied to show the validity of the proposed device design methodology. The internal electric field distribution and electron drift trajectories can be tuned to improve the charge collection efficiency.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-04DOI: 10.1149/2162-8777/ad7402
Min Chen, Shuxin Chen, Yaxuan Ji, Kai Zhang
Negative permittivity in percolation composites garnered significant interest due to its promising implications for practical applications. This study demonstrates that the percolation threshold of the polyaniline(PANI)/epoxy resin composite falls within the range of 40 wt% to 50 wt%. Beyond this percolation threshold, the composites exhibit a corresponding negative dielectric behavior. Notably, at a high PANI content level of 90 wt%, the permittivity exhibits characteristics akin to Lorentz resonance type behavior. This research presents an effective approach to exhibit tunable low-frequency negative permittivity through Lorentz resonance.
{"title":"Communication—Tunable Lorentz-Type Negative Permittivity of PANI/Epoxy Resin Composites in the Frequency Range from 3 kHz to 1 MHz","authors":"Min Chen, Shuxin Chen, Yaxuan Ji, Kai Zhang","doi":"10.1149/2162-8777/ad7402","DOIUrl":"https://doi.org/10.1149/2162-8777/ad7402","url":null,"abstract":"Negative permittivity in percolation composites garnered significant interest due to its promising implications for practical applications. This study demonstrates that the percolation threshold of the polyaniline(PANI)/epoxy resin composite falls within the range of 40 wt% to 50 wt%. Beyond this percolation threshold, the composites exhibit a corresponding negative dielectric behavior. Notably, at a high PANI content level of 90 wt%, the permittivity exhibits characteristics akin to Lorentz resonance type behavior. This research presents an effective approach to exhibit tunable low-frequency negative permittivity through Lorentz resonance.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f0
Padmanaban B, Hariharasuthan R, Saravanan P, SenthilKannan K
Oxalic acid dihydrate (OADH) crystal was grown by slow evaporation solution method, milled to micro-OADH, impacted with shocked 50 pulses and harvested in a 16-day period. The 2 MPa pressure with 2.2 Mach number of 864 K temperature specifies the product as shocked 50 scaled OADH. Single crystalline X-ray diffraction of OADH macro are as specified with P21/n as space group with monoclinic as the crystal system and shocked 50 scaled OADH are with lattice constants; the % of elements of OADH specimen are confirmed by theory and practice. The dielectric constant of OADH is higher at lower frequency values by space charge polarization. OADH of all scales are of the negative photo-conductivity type. The influx data of OADH of three types of scaling are identified as better electronic filter. The micro-OADH is confirmed by the scanning electron microscopy analysis as 10 micrometer scaling without any flaws. The Fluorescence (FL) study shows bluish FL emission for all samples of OADH; sensitivity is 8.88>6.6>2.2 for shocked 50-OADH, micro-OADH, macro-OADH. The Miller’s indices of (101) profile for RGB display is shown without as well with recursive colors of OADH.
{"title":"Growth, Characterizations of Oxalic Acid Di-Hydrate Crystals of Pure, Milled, Shocked Impact of 50 Scaling for Electronic, Photonic, Display and Sensor Usefulness by Theory and Practice","authors":"Padmanaban B, Hariharasuthan R, Saravanan P, SenthilKannan K","doi":"10.1149/2162-8777/ad71f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71f0","url":null,"abstract":"Oxalic acid dihydrate (OADH) crystal was grown by slow evaporation solution method, milled to micro-OADH, impacted with shocked 50 pulses and harvested in a 16-day period. The 2 MPa pressure with 2.2 Mach number of 864 K temperature specifies the product as shocked 50 scaled OADH. Single crystalline X-ray diffraction of OADH macro are as specified with P2<sub>1</sub>/n as space group with monoclinic as the crystal system and shocked 50 scaled OADH are with lattice constants; the % of elements of OADH specimen are confirmed by theory and practice. The dielectric constant of OADH is higher at lower frequency values by space charge polarization. OADH of all scales are of the negative photo-conductivity type. The influx data of OADH of three types of scaling are identified as better electronic filter. The micro-OADH is confirmed by the scanning electron microscopy analysis as 10 micrometer scaling without any flaws. The Fluorescence (FL) study shows bluish FL emission for all samples of OADH; sensitivity is 8.88>6.6>2.2 for shocked 50-OADH, micro-OADH, macro-OADH. The Miller’s indices of (101) profile for RGB display is shown without as well with recursive colors of OADH.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f1
Zein K. Heiba, Mohamed Bakr Mohamed, Ali Badawi
We investigated the effects of Ni-doping amount on the structural, magnetic, and shielding properties of nano Er2O3. Nano Er2−xNixO3 (x = 0, 0.05, 0.1, 0.15) samples were fabricated by a pechini scheme and characterized via X-ray diffraction. Rietveld refinement was used to discover the distribution of cations on the two crystallographic sites. Cation ordering in the two nonequivalent sites of the structure and the variation of the oxygen bond lengths of octahedra with the composition x were also investigated. A consistent reduction in the average bond lengths of (Er/Ni)O6 octahedra around 8b and 24d as x progresses was observed. Average crystallite size reduced while average lattice micro-strain increased with increasing Ni doping. The correlation between magnetization and temperature for all samples under a magnetic field of 200 Oe was studied. Curie-Weiss law was applied to find the magnetic moments and the types of magnetic structure. The μeff in the Er2−xNixO3 samples dropped from 9.7 to 9.36 μB as the nickel doping level rose from 0 to 0.15. Calculated magnetic moments, μcal, were found to drop from 9.4 to 9.02 μB as the nickel doping level changed from x = 0 to x = 0.15 in Er2−xNixO3 samples. Curie paramagnetic temperature (θ) for all samples has been observed to rise from −10.6 to −19.34. The theoretical gamma-ray attenuation parameters for nano Er2−xNixO3 samples were acquired through the Phy-X/PSD software. The nano Er2−xNixO3 samples have been proven to possess remarkable magnetic and neutron shielding applications.
{"title":"Tailoring the Magnetic, Structural and Shielding Characteristics of Nano Er2O3 via Ni Doping","authors":"Zein K. Heiba, Mohamed Bakr Mohamed, Ali Badawi","doi":"10.1149/2162-8777/ad71f1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71f1","url":null,"abstract":"We investigated the effects of Ni-doping amount on the structural, magnetic, and shielding properties of nano Er<sub>2</sub>O<sub>3</sub>. Nano Er<sub>2−x</sub>Ni<sub>x</sub>O<sub>3</sub> (x = 0, 0.05, 0.1, 0.15) samples were fabricated by a pechini scheme and characterized via X-ray diffraction. Rietveld refinement was used to discover the distribution of cations on the two crystallographic sites. Cation ordering in the two nonequivalent sites of the structure and the variation of the oxygen bond lengths of octahedra with the composition x were also investigated. A consistent reduction in the average bond lengths of (Er/Ni)O<sub>6</sub> octahedra around 8b and 24d as x progresses was observed. Average crystallite size reduced while average lattice micro-strain increased with increasing Ni doping. The correlation between magnetization and temperature for all samples under a magnetic field of 200 Oe was studied. Curie-Weiss law was applied to find the magnetic moments and the types of magnetic structure. The <italic toggle=\"yes\">μ</italic>\u0000<sub>eff</sub> in the Er<sub>2−x</sub>Ni<sub>x</sub>O<sub>3</sub> samples dropped from 9.7 to 9.36 μ<sub>B</sub> as the nickel doping level rose from 0 to 0.15. Calculated magnetic moments, <italic toggle=\"yes\">μ</italic>\u0000<sub>cal</sub>, were found to drop from 9.4 to 9.02 μ<sub>B</sub> as the nickel doping level changed from x = 0 to x = 0.15 in Er<sub>2−x</sub>Ni<sub>x</sub>O<sub>3</sub> samples. Curie paramagnetic temperature (<italic toggle=\"yes\">θ</italic>) for all samples has been observed to rise from −10.6 to −19.34. The theoretical gamma-ray attenuation parameters for nano Er<sub>2−x</sub>Ni<sub>x</sub>O<sub>3</sub> samples were acquired through the Phy-X/PSD software. The nano Er<sub>2−x</sub>Ni<sub>x</sub>O<sub>3</sub> samples have been proven to possess remarkable magnetic and neutron shielding applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f3
Yu-Hung Chen, Ching-Chuan Chou, Hong-Shi Liu, Chien-Tso Lin, Yu-Pin Lin
This study presents the fabrication of perovskite thin-film solar cells (PTSCs) with adjustable colors, achieved through a multilayer film design. The multilayer film, comprising Au and indium-tin-oxide (ITO), functions as an adjusted color reflectance (ACR) multilayer film. When the ITO thickness is varied from 100 to 150 nm, the color of the PTSCs can be adjusted from lighter shades that resemble fresh milk tea to darker tones akin to caramel. The color changes that the ACR multilayer film induces correlate well with its reflectance response. Compared with traditional black-colored PTSCs, the milk tea–colored PTSCs maintain a power conversion efficiency of >12%. This achievement suggests the potential for fabricating PTSCs in various colors and patterns that are suitable for use in furnishings, accessories, and other applications.
{"title":"Milk Tea–Colored Perovskite Solar Cells Fabricated Through a Multilayer Film Design","authors":"Yu-Hung Chen, Ching-Chuan Chou, Hong-Shi Liu, Chien-Tso Lin, Yu-Pin Lin","doi":"10.1149/2162-8777/ad71f3","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71f3","url":null,"abstract":"This study presents the fabrication of perovskite thin-film solar cells (PTSCs) with adjustable colors, achieved through a multilayer film design. The multilayer film, comprising Au and indium-tin-oxide (ITO), functions as an adjusted color reflectance (ACR) multilayer film. When the ITO thickness is varied from 100 to 150 nm, the color of the PTSCs can be adjusted from lighter shades that resemble fresh milk tea to darker tones akin to caramel. The color changes that the ACR multilayer film induces correlate well with its reflectance response. Compared with traditional black-colored PTSCs, the milk tea–colored PTSCs maintain a power conversion efficiency of >12%. This achievement suggests the potential for fabricating PTSCs in various colors and patterns that are suitable for use in furnishings, accessories, and other applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-30DOI: 10.1149/2162-8777/ad71f2
K. Ashok, P. Usha, Nagaraju R., T. Ramesh, N. Pavan Kumar, Ghassan M. Sulaiman
Zinc Ferrite (ZnFe2O4) nanoparticles were synthesized successfully via the modified ultrasonic-assisted co-precipitation method. Structural characterization, conducted through X-ray diffraction (XRD) analysis and Rietveld refinement, revealed a single cubic phase with a mixed spinel structure. Fourier transform infrared spectroscopy confirmed the presence of functional groups indicative of the spinel ferrite structure. Morphological analysis using field-emission scanning electron microscopy showcased the nanoparticles’ uniform morphology and size distribution. UV–vis spectra revealed the optical properties, while the Tauc Plot method determined the optical band gap. Electron paramagnetic resonance spectra confirm the symmetric resonance peak with 1254 Oe line width and the Lande g value 2.133. Magnetic hysteresis loops confirm the soft magnetic nature of the nanoparticles with magnetic saturation and coercivity of 39.2 emu gm−1 and 77.5 Oe. The anticancer properties against various cancer cell lines (HeLa, HepG-2 and MCF-7) revealed significant anticancer activity against HepG-2 and HeLa cells compared to MCF-7 cancer cells, and the results were compared with the standard drug cisplatin. A comparative analysis of results among cancer cell lines was conducted and discussed.
通过改良超声辅助共沉淀法成功合成了锌铁氧体（ZnFe2O4）纳米粒子。通过 X 射线衍射 (XRD) 分析和里特维尔德细化法进行的结构表征显示，该纳米粒子为具有混合尖晶石结构的单立方相。傅立叶变换红外光谱分析证实了尖晶石铁氧体结构中官能团的存在。利用场发射扫描电子显微镜进行的形态分析表明，纳米颗粒的形态和尺寸分布均匀一致。紫外-可见光谱显示了其光学特性，而陶氏图谱法则确定了其光带隙。电子顺磁共振光谱证实了线宽为 1254 Oe 的对称共振峰和 2.133 的 Lande g 值。磁滞回线证实了纳米粒子的软磁性质，其磁饱和度和矫顽力分别为 39.2 emu gm-1 和 77.5 Oe。针对各种癌细胞系（HeLa、HepG-2 和 MCF-7）的抗癌特性表明，与 MCF-7 癌细胞相比，HepG-2 和 HeLa 细胞具有显著的抗癌活性，并将结果与标准药物顺铂进行了比较。对不同癌细胞系的结果进行了比较分析和讨论。
{"title":"Multifunctional Characterization and Anticancer Properties of Magnetic Zinc Ferrite Nanoparticles by Modified Ultrasonic Assisted Co-precipitation Method","authors":"K. Ashok, P. Usha, Nagaraju R., T. Ramesh, N. Pavan Kumar, Ghassan M. Sulaiman","doi":"10.1149/2162-8777/ad71f2","DOIUrl":"https://doi.org/10.1149/2162-8777/ad71f2","url":null,"abstract":"Zinc Ferrite (ZnFe<sub>2</sub>O<sub>4</sub>) nanoparticles were synthesized successfully via the modified ultrasonic-assisted co-precipitation method. Structural characterization, conducted through X-ray diffraction (XRD) analysis and Rietveld refinement, revealed a single cubic phase with a mixed spinel structure. Fourier transform infrared spectroscopy confirmed the presence of functional groups indicative of the spinel ferrite structure. Morphological analysis using field-emission scanning electron microscopy showcased the nanoparticles’ uniform morphology and size distribution. UV–vis spectra revealed the optical properties, while the Tauc Plot method determined the optical band gap. Electron paramagnetic resonance spectra confirm the symmetric resonance peak with 1254 Oe line width and the Lande g value 2.133. Magnetic hysteresis loops confirm the soft magnetic nature of the nanoparticles with magnetic saturation and coercivity of 39.2 emu gm<sup>−1</sup> and 77.5 Oe. The anticancer properties against various cancer cell lines (HeLa, HepG-2 and MCF-7) revealed significant anticancer activity against HepG-2 and HeLa cells compared to MCF-7 cancer cells, and the results were compared with the standard drug cisplatin. A comparative analysis of results among cancer cell lines was conducted and discussed.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a two-step etching process involving inductively coupled plasma (ICP) etching followed by wet chemical etching to achieve smooth and vertical sidewalls, being beneficial for AlGaN-based electronic and optoelectronic devices. The influence of ICP power on the roughness of etched sidewalls is investigated. It is observed that ICP etching alone does not produce smooth sidewalls, necessitating subsequent wet chemical etching using tetramethyl ammonium hydroxide (TMAH) to enhance sidewall smoothness and reduce tilt angle. The morphological evolution of the etched sidewalls with wet etch time for the device structures is also thoroughly investigated. Consistent etch results are achieved for AlxGa1-xN alloys with Al compositions up to 70%, indicating the effectiveness of our etching process.
{"title":"Smooth and Vertical Sidewall Formation for AlGaN-Based Electronic and Optoelectronic Devices","authors":"Arnob Ghosh, Agnes Maneesha Dominic Merwin Xavier, Siddharth Rajan, Shamsul Arafin","doi":"10.1149/2162-8777/ad6f43","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6f43","url":null,"abstract":"We report a two-step etching process involving inductively coupled plasma (ICP) etching followed by wet chemical etching to achieve smooth and vertical sidewalls, being beneficial for AlGaN-based electronic and optoelectronic devices. The influence of ICP power on the roughness of etched sidewalls is investigated. It is observed that ICP etching alone does not produce smooth sidewalls, necessitating subsequent wet chemical etching using tetramethyl ammonium hydroxide (TMAH) to enhance sidewall smoothness and reduce tilt angle. The morphological evolution of the etched sidewalls with wet etch time for the device structures is also thoroughly investigated. Consistent etch results are achieved for Al<sub>x</sub>Ga<sub>1-x</sub>N alloys with Al compositions up to 70%, indicating the effectiveness of our etching process.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-28DOI: 10.1149/2162-8777/ad709f
Anand Parkash, Adeel Mukhtar Arain, Masroor Abro
This study presents the synthesis and characterization of hierarchical nitrogen-doped carbon (HCN-900), demonstrating remarkable electrocatalytic performance for both the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER), outperforming traditional catalysts like RuO₂ and Pt/C. HCN-900 exhibits an onset potential of 0.98 V and a half-wave potential of 0.85 V for ORR, closely matching Pt/C performance while achieving an electron transfer number of 4.0, indicative of a four-electron pathway. For OER, HCN-900 achieves a current density of 10 mA cm⁻2 at an overpotential of 223 mV, significantly lower than RuO₂ (288 mV) and Pt/C (363 mV). The material also shows a Tafel slope of 87 mV dec⁻¹, indicating rapid kinetics and efficient electron transfer. This impressive performance is attributed to the optimized structural and electronic properties of HCN-900, including its high surface area, hierarchical porosity, and nitrogen doping, which enhance active site density and promote electron transport. Furthermore, HCN-900 retains approximately 96.72% of its initial performance after 10 h of continuous operation, demonstrating excellent long-term stability. The comprehensive analysis highlights HCN-900 as a promising bifunctional catalyst for advanced energy applications, providing a cost-effective and sustainable alternative to conventional catalysts. Its superior electrocatalytic properties make HCN-900 an excellent candidate for integration into next-generation energy conversion and storage systems.
{"title":"Hierarchical Nitrogen-Doped Carbon: A Bifunctional Catalyst for Oxygen Reduction and Evolution Reactions","authors":"Anand Parkash, Adeel Mukhtar Arain, Masroor Abro","doi":"10.1149/2162-8777/ad709f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad709f","url":null,"abstract":"This study presents the synthesis and characterization of hierarchical nitrogen-doped carbon (HCN-900), demonstrating remarkable electrocatalytic performance for both the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER), outperforming traditional catalysts like RuO₂ and Pt/C. HCN-900 exhibits an onset potential of 0.98 V and a half-wave potential of 0.85 V for ORR, closely matching Pt/C performance while achieving an electron transfer number of 4.0, indicative of a four-electron pathway. For OER, HCN-900 achieves a current density of 10 mA cm⁻<sup>2</sup> at an overpotential of 223 mV, significantly lower than RuO₂ (288 mV) and Pt/C (363 mV). The material also shows a Tafel slope of 87 mV dec⁻¹, indicating rapid kinetics and efficient electron transfer. This impressive performance is attributed to the optimized structural and electronic properties of HCN-900, including its high surface area, hierarchical porosity, and nitrogen doping, which enhance active site density and promote electron transport. Furthermore, HCN-900 retains approximately 96.72% of its initial performance after 10 h of continuous operation, demonstrating excellent long-term stability. The comprehensive analysis highlights HCN-900 as a promising bifunctional catalyst for advanced energy applications, providing a cost-effective and sustainable alternative to conventional catalysts. Its superior electrocatalytic properties make HCN-900 an excellent candidate for integration into next-generation energy conversion and storage systems.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a simple and effective method for improving dielectric/GaN interface properties. In the process, a 5 nm thick SiO2 layer was deposited onto a GaN(0001) substrate via plasma-enhanced atomic layer deposition, followed by annealing at 800 °C for 300 s under a flowing N2 atmosphere. The SiO2 layer was then removed using buffered HF solution, and Pt/Al2O3/GaN metal-oxide-semiconductor capacitors were fabricated on the substrate. Positive-bias stress tests revealed that the flat-band voltage shifts were substantially reduced for devices fabricated using this process, probably because of improved interface crystallinity. This method can also be applied to other dielectric/GaN systems.
{"title":"Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process","authors":"Yoshihiro Irokawa, Toshihide Nabatame, Tomomi Sawada, Manami Miyamoto, Hiromi Miura, Kazuhito Tsukagoshi, Yasuo Koide","doi":"10.1149/2162-8777/ad6fd2","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6fd2","url":null,"abstract":"We report a simple and effective method for improving dielectric/GaN interface properties. In the process, a 5 nm thick SiO<sub>2</sub> layer was deposited onto a GaN(0001) substrate via plasma-enhanced atomic layer deposition, followed by annealing at 800 °C for 300 s under a flowing N<sub>2</sub> atmosphere. The SiO<sub>2</sub> layer was then removed using buffered HF solution, and Pt/Al<sub>2</sub>O<sub>3</sub>/GaN metal-oxide-semiconductor capacitors were fabricated on the substrate. Positive-bias stress tests revealed that the flat-band voltage shifts were substantially reduced for devices fabricated using this process, probably because of improved interface crystallinity. This method can also be applied to other dielectric/GaN systems.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The impact of ceria abrasives on the chemical mechanical polishing (CMP) of molybdenum (Mo) films was examined in alkaline slurries utilizing H2O2 as an oxidizer and ceria abrasives. The static etching rate (SER) decreased after the addition of ceria abrasives to the alkaline H2O2-based slurry, while the removal rate (RR) increased except for that of the slurry at pH 9. At pH 9, following the etching of the Mo film in an H2O2 solution with ceria, the surface became coated with MoO3 and Ce2Mo4O15 species. These species originated from the interaction between ceria, H2O2, and molybdic acid. The Ce2Mo4O15 particles envelop the MoO3 surface, thereby preventing the etching of loose MoO3 and hindering further oxidation of Mo to MoO3. This process effectively reduces the RR of Mo. Utilizing ceria slurries at appropriate pH values facilitates achieving a smooth surface with a reasonable RR.
{"title":"Effects of Ceria Abrasives on the Chemical Mechanical Polishing of Molybdenum Film with Alkaline H2O2 Slurries","authors":"Lianfeng Hu, Yingjie Wang, Qiancheng Sun, Chun-Feng Hu, Haijun Cheng, Xin-Ping Qu","doi":"10.1149/2162-8777/ad6f41","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6f41","url":null,"abstract":"The impact of ceria abrasives on the chemical mechanical polishing (CMP) of molybdenum (Mo) films was examined in alkaline slurries utilizing H<sub>2</sub>O<sub>2</sub> as an oxidizer and ceria abrasives. The static etching rate (SER) decreased after the addition of ceria abrasives to the alkaline H<sub>2</sub>O<sub>2</sub>-based slurry, while the removal rate (RR) increased except for that of the slurry at pH 9. At pH 9, following the etching of the Mo film in an H<sub>2</sub>O<sub>2</sub> solution with ceria, the surface became coated with MoO<sub>3</sub> and Ce<sub>2</sub>Mo<sub>4</sub>O<sub>15</sub> species. These species originated from the interaction between ceria, H<sub>2</sub>O<sub>2</sub>, and molybdic acid. The Ce<sub>2</sub>Mo<sub>4</sub>O<sub>15</sub> particles envelop the MoO<sub>3</sub> surface, thereby preventing the etching of loose MoO<sub>3</sub> and hindering further oxidation of Mo to MoO<sub>3</sub>. This process effectively reduces the RR of Mo. Utilizing ceria slurries at appropriate pH values facilitates achieving a smooth surface with a reasonable RR.<inline-formula>\u0000<inline-graphic xlink:href=\"jssad6f41-ga.jpg\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula>","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142189615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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