Pub Date : 2024-05-22DOI: 10.1149/2162-8777/ad4f12
Magali Grégoire, Barbara Guitton, Bastien Dury, Fabien Peyrot, Sophie Dreux, Mickael Collonge, Frederic Diette
For new analogic microelectronic circuits development based on non-linear devices such as Schottky diodes formed in Si active regions, new Co-silicide integrations are required to reduce junction leakages. To gather targeted device requirements, precise Co silicide/Si interface optimization and a limited silicide formation at the active edges is needed. The selective etching during the “Salicide” process plays a real role in the oxidation and/or passivation of the silicide layer. Here, we propose a systematic study including a very large spectrum of experiments around the main parameters of CoSi selective etching. The main conclusions are 1) diode leakages are directly linked to SiO2 layer thickness formed during the SC1 dispense or by air exposure over the CoSi layer, 2) significant effect of dispense flow on SiO2 formation is measured through X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry characterizations; 3) optimized diode leakages together with contact resistances are then demonstrated for low SC1 delivery flow and long dispense time; and 4) major changes in final CoSi2 layer morphology and silicide/silicon interface are observed by transmission electron microscopy-energy-dispersive X-ray analyses for different selective etching processes, which are potentially explained by enrichment in Co atoms at CoSi/Si during SiO2 overlayer growth.
为了开发基于非线性器件（如在硅有源区形成的肖特基二极管）的新型模拟微电子电路，需要采用新的硅化钴集成技术来减少结漏。为了满足目标器件的要求，需要对硅化钴/硅界面进行精确优化，并在有源边缘形成有限的硅化物。在 "Salicide "过程中，选择性蚀刻在硅化物层的氧化和/或钝化方面发挥着真正的作用。在此，我们提出了一项系统性研究，包括围绕 CoSi 选择性蚀刻主要参数的大量实验。主要结论有：1）二极管泄漏与 SC1 点胶过程中或 CoSi 层上的空气暴露形成的二氧化硅层厚度直接相关；2）通过 X 射线光电子能谱和飞行时间二次离子质谱分析，测量了点胶流量对二氧化硅形成的显著影响；3) 在低 SC1 输送流量和长点胶时间条件下，二极管泄漏和接触电阻得到优化；以及 4) 通过透射电子显微镜-能量色散 X 射线分析，观察到不同选择性蚀刻工艺下 CoSi2 层最终形貌和硅化物/硅界面的重大变化，这可能是由于在二氧化硅覆盖层生长过程中 CoSi/Si 处的 Co 原子富集造成的。
{"title":"Influence of CoSi Oxidation and Passivation During Silicide Selective Etching on Junction Leakage: Applications to Schottky Diodes Devices","authors":"Magali Grégoire, Barbara Guitton, Bastien Dury, Fabien Peyrot, Sophie Dreux, Mickael Collonge, Frederic Diette","doi":"10.1149/2162-8777/ad4f12","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4f12","url":null,"abstract":"\u0000 For new analogic microelectronic circuits development based on non-linear devices such as Schottky diodes formed in Si active regions, new Co-silicide integrations are required to reduce junction leakages. To gather targeted device requirements, precise Co silicide/Si interface optimization and a limited silicide formation at the active edges is needed. The selective etching during the “Salicide” process plays a real role in the oxidation and/or passivation of the silicide layer. Here, we propose a systematic study including a very large spectrum of experiments around the main parameters of CoSi selective etching. The main conclusions are 1) diode leakages are directly linked to SiO2 layer thickness formed during the SC1 dispense or by air exposure over the CoSi layer, 2) significant effect of dispense flow on SiO2 formation is measured through X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry characterizations; 3) optimized diode leakages together with contact resistances are then demonstrated for low SC1 delivery flow and long dispense time; and 4) major changes in final CoSi2 layer morphology and silicide/silicon interface are observed by transmission electron microscopy-energy-dispersive X-ray analyses for different selective etching processes, which are potentially explained by enrichment in Co atoms at CoSi/Si during SiO2 overlayer growth.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141112531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The current study explores the influence of Zinc (Zn) doping on the crystallography, optical behavior, dielectric properties, and microwave absorption characteristics of hexagonal Barium Vanadate (Ba3(VO4)2). Samples were systematically synthesized with Zn doping concentrations of x=0, 0.05, 0.1, 0.15, and 0.2 mol%, resulting in Ba3-xZnx(VO4)2. Employing various characterization techniques, the alterations in structural, optical, and electrical responses due to incremental Zn incorporation are reported. The UV–VIS DRS absorption spectra reveal a decrease in energy bandgap with increasing concentration of Zn. The lowest optical energy band gap observed was 3.65 eV for x=0.2 mol% Zn. Notably, at a thickness of 6.5 mm, the material achieved a high reflection loss of -82.37 dB at 12.47 GHz for x=0.05 mol% of Zn. Similarly, the same material configuration exhibited a maximum effective absorption bandwidth (EAB) of 5.01 GHz, spanning a frequency range from 12.24 to 17.25 GHz when the thickness was set to 5.5 mm. Furthermore, as the Zn concentration increased from x=0.05 to 0.2 mol%, a decreasing trend in reflection loss was observed, correlating well with the dielectric parameters of samples with different Zn concentrations. The work provides insightful correlations between Zn doping levels and the material’s performance in potential applications ranging from optoelectronics to electromagnetic wave absorption.
{"title":"Microwave Absorption Properties of Hexagonal Ba3(VO4)2 through Zn Doping: A Comprehensive Analysis of Ba3-xZnx(VO4)2","authors":"Praveen Chenna, S. Gandi, Sahil Sharma, Saran Srihari Sripada Panda, Sadi Reddy Parne","doi":"10.1149/2162-8777/ad4f13","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4f13","url":null,"abstract":"\u0000 The current study explores the influence of Zinc (Zn) doping on the crystallography, optical behavior, dielectric properties, and microwave absorption characteristics of hexagonal Barium Vanadate (Ba3(VO4)2). Samples were systematically synthesized with Zn doping concentrations of x=0, 0.05, 0.1, 0.15, and 0.2 mol%, resulting in Ba3-xZnx(VO4)2. Employing various characterization techniques, the alterations in structural, optical, and electrical responses due to incremental Zn incorporation are reported. The UV–VIS DRS absorption spectra reveal a decrease in energy bandgap with increasing concentration of Zn. The lowest optical energy band gap observed was 3.65 eV for x=0.2 mol% Zn. Notably, at a thickness of 6.5 mm, the material achieved a high reflection loss of -82.37 dB at 12.47 GHz for x=0.05 mol% of Zn. Similarly, the same material configuration exhibited a maximum effective absorption bandwidth (EAB) of 5.01 GHz, spanning a frequency range from 12.24 to 17.25 GHz when the thickness was set to 5.5 mm. Furthermore, as the Zn concentration increased from x=0.05 to 0.2 mol%, a decreasing trend in reflection loss was observed, correlating well with the dielectric parameters of samples with different Zn concentrations. The work provides insightful correlations between Zn doping levels and the material’s performance in potential applications ranging from optoelectronics to electromagnetic wave absorption.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141110165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-20DOI: 10.1149/2162-8777/ad4ddf
Yu Ding, Yaru Li, S. Chakir, Jun Mei, Xianbiao Wang
Phosphate pollution leads to deterioration in water quality, posing a serious threat to human health. Therefore, it is important to develop a highly selective and sensitive fluorescent probe for phosphate detection. Here, we report a novel ratiometric fluorescent probe, Fluorescein@NH2-UiO-66 (denoted as Flu@NH2-UiO-66), for the trace detection of phosphate in water. Specifically, during the in-situ solvothermal synthesis of Flu@NH2-UiO-66, fluorescein molecules were encapsulated into the cavities of the metal-organic framework. Furthermore, the encapsulation amount of fluorescein was controlled by adjusting the acidity of the system. The Flu@NH2-UiO-66 (60 H+) sample, prepared with a 60:1 molar ratio of acetic acid to the metal center exhibited distinct dual fluorescence signal peaks. The probe showed a highly selective fluorescence response to phosphate. Within a range of 0-20 μM phosphate concentration, the probe demonstrated excellent linear detection capability with a detection limit of 0.37 μM. Moreover, the mechanism of fluorescence enhancement can be attributed to the addition of phosphate, which greatly increases the UV absorbance of the probe. This study developed a novel ratiometric fluorescent probe capable of rapid, sensitive, and stable detection of trace phosphate, which is of great significance for environmental management.
{"title":"Fluorescein@NH2-UiO-66 Probe for Ratiometric Fluorescence Sensing of Trace Phosphate in Water","authors":"Yu Ding, Yaru Li, S. Chakir, Jun Mei, Xianbiao Wang","doi":"10.1149/2162-8777/ad4ddf","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4ddf","url":null,"abstract":"\u0000 Phosphate pollution leads to deterioration in water quality, posing a serious threat to human health. Therefore, it is important to develop a highly selective and sensitive fluorescent probe for phosphate detection. Here, we report a novel ratiometric fluorescent probe, Fluorescein@NH2-UiO-66 (denoted as Flu@NH2-UiO-66), for the trace detection of phosphate in water. Specifically, during the in-situ solvothermal synthesis of Flu@NH2-UiO-66, fluorescein molecules were encapsulated into the cavities of the metal-organic framework. Furthermore, the encapsulation amount of fluorescein was controlled by adjusting the acidity of the system. The Flu@NH2-UiO-66 (60 H+) sample, prepared with a 60:1 molar ratio of acetic acid to the metal center exhibited distinct dual fluorescence signal peaks. The probe showed a highly selective fluorescence response to phosphate. Within a range of 0-20 μM phosphate concentration, the probe demonstrated excellent linear detection capability with a detection limit of 0.37 μM. Moreover, the mechanism of fluorescence enhancement can be attributed to the addition of phosphate, which greatly increases the UV absorbance of the probe. This study developed a novel ratiometric fluorescent probe capable of rapid, sensitive, and stable detection of trace phosphate, which is of great significance for environmental management.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141123402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-20DOI: 10.1149/2162-8777/ad4de1
Iris Denmark, Ahmad Alam, Rayaan Ahsan, Fumiya Watanabe, T. Viswanathan, Noureen Siraj
Two approaches have been utilized to optimize the energy storage characteristics of doped carbon materials derived from Lignosol, a biomass product, to address the rising energy demand issues. Herein, phosphorus and nitrogen co-doped carbon (PNDC) materials with varying doping agent volumes were synthesized by utilizing microwave irradiation. Chemical activation and physical activation were employed to enhance these materials’ characteristics. Chemical activation was performed in a one-pot, single-step process, rather than a traditional multi-step protocol, using small amounts of potassium hydroxide. Furthermore, the physical activation method required multiple steps: doped carbon was prepared via microwave, exposed to water, filtered, frozen and then dried. With this, the expansion properties of water at freezing temperatures were exploited to alter the materials’ surface characteristics. All materials were characterized and compared for their physicochemical properties. All defect ratios supported the presence of doping. Additional results revealed that both chemical and physical activation approaches effectively modify the topographical features as well as the electrochemical activity (charge storage) of the doped carbon materials. The chemically activated doped carbon exhibited the highest resulting surface area of 1352 m2/g and a specific capacitance value of 347 F g-1 with excellent cycling stability as compared to other similarly synthesized materials.
为解决日益增长的能源需求问题，人们采用了两种方法来优化从生物质产品木质素（Lignosol）中提取的掺杂碳材料的储能特性。在这里，利用微波辐照合成了不同掺杂剂量的磷氮共掺杂碳（PNDC）材料。化学活化和物理活化被用来增强这些材料的特性。化学活化是通过使用少量氢氧化钾的单锅、单步工艺进行的，而不是传统的多步工艺。此外，物理活化法需要多个步骤：通过微波制备掺杂碳、将其暴露在水中、过滤、冷冻，然后干燥。这样就利用了水在冰冻温度下的膨胀特性来改变材料的表面特性。对所有材料的物理化学特性进行了表征和比较。所有缺陷率都证明了掺杂的存在。其他结果表明，化学和物理活化方法都能有效改变掺杂碳材料的形貌特征和电化学活性（电荷存储）。与其他类似的合成材料相比，化学活化掺杂碳的表面积最高，达到 1352 m2/g，比电容值为 347 F g-1，并且具有出色的循环稳定性。
{"title":"Comparative Study of Chemical Activation and Physical Activation Approach to Optimize Biomass-Based Doped Carbons for Energy Applications","authors":"Iris Denmark, Ahmad Alam, Rayaan Ahsan, Fumiya Watanabe, T. Viswanathan, Noureen Siraj","doi":"10.1149/2162-8777/ad4de1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4de1","url":null,"abstract":"\u0000 Two approaches have been utilized to optimize the energy storage characteristics of doped carbon materials derived from Lignosol, a biomass product, to address the rising energy demand issues. Herein, phosphorus and nitrogen co-doped carbon (PNDC) materials with varying doping agent volumes were synthesized by utilizing microwave irradiation. Chemical activation and physical activation were employed to enhance these materials’ characteristics. Chemical activation was performed in a one-pot, single-step process, rather than a traditional multi-step protocol, using small amounts of potassium hydroxide. Furthermore, the physical activation method required multiple steps: doped carbon was prepared via microwave, exposed to water, filtered, frozen and then dried. With this, the expansion properties of water at freezing temperatures were exploited to alter the materials’ surface characteristics. All materials were characterized and compared for their physicochemical properties. All defect ratios supported the presence of doping. Additional results revealed that both chemical and physical activation approaches effectively modify the topographical features as well as the electrochemical activity (charge storage) of the doped carbon materials. The chemically activated doped carbon exhibited the highest resulting surface area of 1352 m2/g and a specific capacitance value of 347 F g-1 with excellent cycling stability as compared to other similarly synthesized materials.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141119839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-20DOI: 10.1149/2162-8777/ad4de0
Xueyin Su, Binbin Xu, Bo Tang, Jing Xu, Jinbiao Liu, Cui Yan, Meiyin Yang, Chen Bohan, Tong Keyou, Guanyuan Zhao, Binhong Li, Xiaolei Wang, Tianchun Ye, Jun Luo
Defects induced by the source/drain process have a significant impact on the scattering mechanism of PMOS at cryogenic temperatures. Here, the cryogenic characteristics of FD-SOI devices with heavily doped epitaxial source/drain (Epi FD-SOI devices) and metallic Schottky barrier source/drain (SB FD-SOI devices) were investigated from 300 K down to 6 K. The doping profile along the channel was analyzed by TCAD simulation analysis. Experimental comparison of transistor performance at cryogenic temperatures was carried out for these devices with gate lengths (LG) of 100 nm and 40 nm. The I-V characteristics of the FD-SOI devices were measured with a liquid helium cooling environment. The cryogenic effect of the two types of devices on Key parameters including transconductance (Gm), field effect mobility (μFE), threshold voltage (Vth) and subthreshold slope (SS) were systematically analyzed. The doping distribution of the heavily doped epitaxial SiGe source/drain structure were subjected to more Coulomb scattering at cryogenic temperatures, whereas the doping distribution of the Schottky-barrier source/drain structure dictates that the device is mainly subjected to phonon scattering at cryogenic temperatures.
{"title":"Comparative Cryogenic Investigation of FD-SOI Devices with Doped Epitaxial and Metallic Source/Drain","authors":"Xueyin Su, Binbin Xu, Bo Tang, Jing Xu, Jinbiao Liu, Cui Yan, Meiyin Yang, Chen Bohan, Tong Keyou, Guanyuan Zhao, Binhong Li, Xiaolei Wang, Tianchun Ye, Jun Luo","doi":"10.1149/2162-8777/ad4de0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4de0","url":null,"abstract":"\u0000 Defects induced by the source/drain process have a significant impact on the scattering mechanism of PMOS at cryogenic temperatures. Here, the cryogenic characteristics of FD-SOI devices with heavily doped epitaxial source/drain (Epi FD-SOI devices) and metallic Schottky barrier source/drain (SB FD-SOI devices) were investigated from 300 K down to 6 K. The doping profile along the channel was analyzed by TCAD simulation analysis. Experimental comparison of transistor performance at cryogenic temperatures was carried out for these devices with gate lengths (LG) of 100 nm and 40 nm. The I-V characteristics of the FD-SOI devices were measured with a liquid helium cooling environment. The cryogenic effect of the two types of devices on Key parameters including transconductance (Gm), field effect mobility (μFE), threshold voltage (Vth) and subthreshold slope (SS) were systematically analyzed. The doping distribution of the heavily doped epitaxial SiGe source/drain structure were subjected to more Coulomb scattering at cryogenic temperatures, whereas the doping distribution of the Schottky-barrier source/drain structure dictates that the device is mainly subjected to phonon scattering at cryogenic temperatures.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141122753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-20DOI: 10.1149/2162-8777/ad4dde
Abdullah Bin Queyam, Ramesh Kumar, R. K. Ratnesh, R. Chauhan
Biomedical signal processing has advanced to the point that tools and methods are now available to doctors to diagnose and track medical conditions connected to pregnancy. However, it is extremely difficult for researchers to look into novel procedures and approaches to uncover underlying pathological abnormalities associated with high-risk pregnancies due to the scarcity of high-quality medical databases of pregnant women. In this study, a LabVIEW software environment is used to precisely design a bio-physiological signal generator (BPSG) for use in feto-maternal health assessment applications. McSharry's dynamical ECG model served as inspiration for the methods utilized to create the proposed time-domain mathematical model. The BPSG is capable of generating various realistic synthetic signals like respiration signal, pulse plethysmography (PPG) signal, phonocardiography (PCG) signal, maternal ECG (MECG) signal, fetal ECG (FECG) signal, abdominal ECG (AECG) signa,l and umbilical blood flow (UBF) velocimetry signals with corresponding Doppler indices. It is possible to create synthetic signals for both healthy and unhealthy conditions. Synthetic signal facilitates the testing and calibration of new diagnostic procedures, denoising algorithms, feature extraction processes, and instrumentation, all of which contribute to the prompt prediction of an overall health state of expectant mother.
{"title":"LabVIEW-Enabled Synthetic Signal for Empowering Fetal-Maternal Healthcare","authors":"Abdullah Bin Queyam, Ramesh Kumar, R. K. Ratnesh, R. Chauhan","doi":"10.1149/2162-8777/ad4dde","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4dde","url":null,"abstract":"\u0000 Biomedical signal processing has advanced to the point that tools and methods are now available to doctors to diagnose and track medical conditions connected to pregnancy. However, it is extremely difficult for researchers to look into novel procedures and approaches to uncover underlying pathological abnormalities associated with high-risk pregnancies due to the scarcity of high-quality medical databases of pregnant women. In this study, a LabVIEW software environment is used to precisely design a bio-physiological signal generator (BPSG) for use in feto-maternal health assessment applications. McSharry's dynamical ECG model served as inspiration for the methods utilized to create the proposed time-domain mathematical model. The BPSG is capable of generating various realistic synthetic signals like respiration signal, pulse plethysmography (PPG) signal, phonocardiography (PCG) signal, maternal ECG (MECG) signal, fetal ECG (FECG) signal, abdominal ECG (AECG) signa,l and umbilical blood flow (UBF) velocimetry signals with corresponding Doppler indices. It is possible to create synthetic signals for both healthy and unhealthy conditions. Synthetic signal facilitates the testing and calibration of new diagnostic procedures, denoising algorithms, feature extraction processes, and instrumentation, all of which contribute to the prompt prediction of an overall health state of expectant mother.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141118803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad46f0
Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien
We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.
我们开发了一种方法，利用半周期 Hf 前驱体吸附，通过原位等离子体增强原子层沉积，对基于 Hf 的栅极堆栈的 GeO2 IL 进行微量掺杂。这种技术能有效减少 GeO 的气化，提高 GeO2 层的热稳定性。我们的研究结果表明，将 Hf 微妙地引入 GeO2 层后，在较高温度下的累积电容（Cacc）在电容-电压（CV）曲线上没有明显的增加。根据 X 射线光电子能谱的 Ge 3d 光谱，我们发现 IL 有来自额外 Hf-O 键的信号；因此，我们得出结论：加入 Hf 可以大大抑制 GeO 蒸发。因此，在 GeOx IL 中加入金属形成 HfGeOx 后，在 500 °C 的 PMA 温度下，漏电流明显降低到 9 × 10-5 A cm-2，界面阱密度 (Dit) 最低，约为 2 × 1011 eV-1 cm-2。此外，在器件制造过程中应用这种栅极堆栈结构还能显著降低关态漏电流，提高有效峰值空穴迁移率。
{"title":"Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor","authors":"Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien","doi":"10.1149/2162-8777/ad46f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad46f0","url":null,"abstract":"We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad47d1
Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi
Mn-doped Zn3P2-diluted magnetic semiconducting nanoparticles (Zn0.98Mn0.02P2, Zn0.96Mn0.04P2, Zn0.94Mn0.06P2, and Zn0.92Mn0.08P2) were synthesized by a conventional solid-state reaction followed by a subsequent vacuum annealing process. The formation of a tetragonal structure of pure and Mn-doped Zn3P2 was confirmed by X-ray diffraction studies, with no evidence of any further phases. Lattice parameters dicrease from a = b = 8.133 Å, c = 11.459 Å to a = b = 8.041 Å, c = 11.410 Å with increasing dopant concentration. Scanning electron microscpy analysis indicated that all samples that underwent doping exhibited agglomeration in the scanned range of 500 nm. Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. Mn-doped Zn3P2 nanoparticles are potential materials for future spintronics.
通过常规固态反应和真空退火工艺合成了掺锰的 Zn3P2 稀释磁性半导体纳米粒子（Zn0.98Mn0.02P2、Zn0.96Mn0.04P2、Zn0.94Mn0.06P2 和 Zn0.92Mn0.08P2）。X 射线衍射研究证实，纯 Zn3P2 和掺锰 Zn3P2 形成了四方结构，没有任何其他相的迹象。随着掺杂浓度的增加，晶格参数从 a = b = 8.133 Å、c = 11.459 Å 下降到 a = b = 8.041 Å、c = 11.410 Å。扫描电子显微镜分析表明，所有经过掺杂的样品在 500 纳米的扫描范围内都出现了团聚现象。能量色散 X 射线分析证实了样品中锌、钯和锰的存在，而且所有合成样品都达到了接近原子的比例。在漫反射光谱中，随着掺杂浓度的增加，光带隙从 1.398 eV 增加到 1.418 eV。聚光光谱显示，在不同的激发波长（215 纳米和 290 纳米）下，随着掺杂剂含量从 x = 0.02 增加到 0.08，所有掺杂样品的发射强度保持不变。振动样品磁力计测试证实了样品在室温下具有铁磁性，而且饱和磁化率与锰含量呈正相关，磁矩随着掺杂剂含量的增加从 0.0640 增至 0.1181 emu g-1。亮点 通过固态反应方法合成了掺锰的 Zn3P2 纳米粒子。使用 XRD、SEM、EDAX、UV-vis-NIR、PL 和 VSM 对制备的纳米粒子进行表征分析。掺杂锰（x = 0.08）的 Zn3P2 比掺杂锰（x = 0.02 至 0.06）的 Zn3P2 纳米粒子具有更强的室温铁磁性。掺锰的 Zn3P2 纳米粒子是未来自旋电子学的潜在材料。
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Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.
众所周知，单晶蓝宝石是最坚硬的绝缘体之一。其机械特性和化学惰性使其成为一种难以抛光的材料，难以达到其应用所需的原子级表面光滑度。使用金刚石磨料进行机械抛光的去除率很高，但会产生无法接受的抛光沟痕。另一方面，化学机械抛光可获得原子级的光滑度，但过程缓慢。因此，工业界将这两种方法结合起来使用。在这项工作中，我们尝试使用原子力显微镜、X 射线衍射和横截面透射电子显微镜，对金刚石研磨机械抛光和胶体二氧化硅化学机械抛光引起的 C 平面和 A 平面蓝宝石的开槽和次表面损伤进行表征。亮点 蓝宝石（α-Al2O3）两种取向/平面的化学机械抛光/平面化。表征抛光引起的沟纹--测量沟纹深度。生长外延层、显示器、可穿戴电子设备的窗口等。使用 TEM、XRD 和 AFM 对蓝宝石表面进行表征 - 结果量化。利用 X 射线摇摆曲线确定晶体表面质量。
{"title":"Characterization of Polish-Induced Gouges on Single Crystal Sapphire Substrates","authors":"Jinhyung Lee, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Prajeen Dumbare and Kannan Balasundaram","doi":"10.1149/2162-8777/ad4675","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4675","url":null,"abstract":"Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad458e
Abdul Rauf Jamali, Asif Ahmed Shaikh and Ali Dad Chandio
Over the past few decades, Polyvinyl-alcohol (PVOH)/cornstarch (CS)-based composite thin films have garnered significant interest due to their enhanced properties. Synthesis of such films relies heavily on depolymerization reactions within the solution of the PVOH/CS blends. Understanding how depolymerization affects the crystal structure and properties of these films is crucial for further improvement. This study aims to evaluate the depolymerization effects of crosslinked PVOH incorporated with CS as filler materials (with an 80:20 mass ratio) using ultrasonication at various time intervals while maintaining a constant frequency of 25 KHz. The prepared solution is then cast into thin films using blade coating. Comparative analyses were then conducted between samples subjected to ultrasonication (treated) and without ultrasonication (untreated) to assess their properties based on structural physical, mechanical, optical, and aspects of biodegradability . The investigation revealed significant changes in crystal structure and lattice strains following ultrasonication of the PVOH/CS solution when compared to untreated PVOH/CS samples. Importantly, longer ultrasonication times correlated with increased tensile strength. Additionally, the treated samples led to improvements in thin film transparency and a notable decrease in absorbance. These changes were attributed to the mechanical depolymerization induced by ultrasonication, aligning the thin films with the necessary properties for food packaging applications.
{"title":"Influence of Ultrasonication Treatment on Mechanical, Optical, and Physiochemical Properties of Polyvinyl-alcohol/cornstarch Biocomposite Thin Films","authors":"Abdul Rauf Jamali, Asif Ahmed Shaikh and Ali Dad Chandio","doi":"10.1149/2162-8777/ad458e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad458e","url":null,"abstract":"Over the past few decades, Polyvinyl-alcohol (PVOH)/cornstarch (CS)-based composite thin films have garnered significant interest due to their enhanced properties. Synthesis of such films relies heavily on depolymerization reactions within the solution of the PVOH/CS blends. Understanding how depolymerization affects the crystal structure and properties of these films is crucial for further improvement. This study aims to evaluate the depolymerization effects of crosslinked PVOH incorporated with CS as filler materials (with an 80:20 mass ratio) using ultrasonication at various time intervals while maintaining a constant frequency of 25 KHz. The prepared solution is then cast into thin films using blade coating. Comparative analyses were then conducted between samples subjected to ultrasonication (treated) and without ultrasonication (untreated) to assess their properties based on structural physical, mechanical, optical, and aspects of biodegradability . The investigation revealed significant changes in crystal structure and lattice strains following ultrasonication of the PVOH/CS solution when compared to untreated PVOH/CS samples. Importantly, longer ultrasonication times correlated with increased tensile strength. Additionally, the treated samples led to improvements in thin film transparency and a notable decrease in absorbance. These changes were attributed to the mechanical depolymerization induced by ultrasonication, aligning the thin films with the necessary properties for food packaging applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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