Pub Date : 2024-04-12DOI: 10.1149/2162-8777/ad3982
Mallesh D., Pallati Naresh, Gangadhar Thalari, Aravind Seema
LixMg1−xFe2O4 where x=0.0to0.5with0.1 nano ferrites were synthesized by citrate gel auto combustion. Using a field-emission scanning electron microscope (FE-SEM) and the X-ray diffraction technique, their structural and topographical studies were examined. The prepared nano ferrites’ single-phase cubic spinel along the Fd3m space group is confirmed by the structural investigation. The synthesized samples were found to have a crystalline size of 20–26 nm, as determined by the Debye–Scherrer formula. Lattice parameter variation observed for the samples indicates dopant atoms into a crystal lattice can also lead to changes in the lattice constant. FE-SEM images revealed the clear grain and grain boundaries with agglomerated structure and it varied between 33.6 nm-24.4 nm. Two bands observed in Fourier transform infrared spectroscopy illustrates the M-O band in tetrahedral and octahedral sites. Dielectric parameters of the sample observed by LCR meter. Single semicircle behavior observed in impedance spectra. Dielectric constant and dielectric loss decreased as increasing frequency explained by Koop’s theory of mechanism. AC conductivity increasing trend observed with frequency, mobility of charge carrier active at high frequency domain.
{"title":"Structural and Electrical Properties of Li Substituted Mg Nano Ferrites: Prepared by Citrate-gel Auto Combustion Method","authors":"Mallesh D., Pallati Naresh, Gangadhar Thalari, Aravind Seema","doi":"10.1149/2162-8777/ad3982","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3982","url":null,"abstract":"Li<sub>x</sub>Mg<sub>1−x</sub>Fe<sub>2</sub>O<sub>4</sub> where <inline-formula>\u0000<tex-math>\u0000<?CDATA ${x}=0.0,{to},0.5,{with},0.1$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:mi mathvariant=\"italic\">x</mml:mi><mml:mo>=</mml:mo><mml:mn>0.0</mml:mn><mml:mspace width=\"0.5em\"></mml:mspace><mml:mi mathvariant=\"italic\">to</mml:mi><mml:mspace width=\"0.5em\"></mml:mspace><mml:mn>0.5</mml:mn><mml:mspace width=\"0.5em\"></mml:mspace><mml:mi mathvariant=\"italic\">with</mml:mi><mml:mspace width=\"0.5em\"></mml:mspace><mml:mn>0.1</mml:mn></mml:math>\u0000<inline-graphic xlink:href=\"jssad3982ieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> nano ferrites were synthesized by citrate gel auto combustion. Using a field-emission scanning electron microscope (FE-SEM) and the X-ray diffraction technique, their structural and topographical studies were examined. The prepared nano ferrites’ single-phase cubic spinel along the Fd<sub>3</sub>m space group is confirmed by the structural investigation. The synthesized samples were found to have a crystalline size of 20–26 nm, as determined by the Debye–Scherrer formula. Lattice parameter variation observed for the samples indicates dopant atoms into a crystal lattice can also lead to changes in the lattice constant. FE-SEM images revealed the clear grain and grain boundaries with agglomerated structure and it varied between 33.6 nm-24.4 nm. Two bands observed in Fourier transform infrared spectroscopy illustrates the M-O band in tetrahedral and octahedral sites. Dielectric parameters of the sample observed by LCR meter. Single semicircle behavior observed in impedance spectra. Dielectric constant and dielectric loss decreased as increasing frequency explained by Koop’s theory of mechanism. AC conductivity increasing trend observed with frequency, mobility of charge carrier active at high frequency domain.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-10DOI: 10.1149/2162-8777/ad397f
Avinash Sharma, Akash K., Swati Kumari, Kartik Chauhan, Abija James, Riya Goel, Jay Singh, Rupak Nagraik, Deepak Kumar
Multidrug resistance (MDR) is a significant global challenge requiring strategic solutions to address bacterial infections. Recent advancements in nanotechnology, particularly in the synthesis of zinc oxide nanoparticles (ZnO NPs) using natural agents as stabilizers and reducing agents, have shown promising results in combating MDR. These nanoparticles possess strong antimicrobial properties against different strains of Gram-positive and Gram-negative, making them suitable for various industries, including food, pharmaceuticals, coatings, and medical devices. ZnO-NPs work by generating reactive oxygen species, releasing zinc ions (Zn2+), disrupting the bacterial cell membrane, interfering with metabolic processes and genetic material, and inducing oxidative stress and apoptosis. However, more research is needed to refine synthesis techniques, control size and morphology, and increase antibacterial efficacy. To fully understand their potential, interactions with proteins, DNA, and bacterial cell walls must also be examined. Investigating the synergistic potential of biogenic ZnO NPs with conventional antibacterial treatments could enhance therapeutic effectiveness while minimizing the risk of resistance emergence. Here we provide insight into the advancements in biogenic synthesis of nanoparticles using bio extracts and their applications in antimicrobial resistance as well as various factors affecting the synthesis process and characterization techniques for ZnO NPs. Recent studies on the antimicrobial activity of biogenic ZnO NPs against different pathogens and their mechanisms of action are discussed. Furthermore, potential applications of biogenic ZnO NPs as antimicrobial agents are highlighted.
{"title":"Biogenic Zinc Oxide Nanoparticles: An Insight into the Advancements in Antimicrobial Resistance","authors":"Avinash Sharma, Akash K., Swati Kumari, Kartik Chauhan, Abija James, Riya Goel, Jay Singh, Rupak Nagraik, Deepak Kumar","doi":"10.1149/2162-8777/ad397f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad397f","url":null,"abstract":"Multidrug resistance (MDR) is a significant global challenge requiring strategic solutions to address bacterial infections. Recent advancements in nanotechnology, particularly in the synthesis of zinc oxide nanoparticles (ZnO NPs) using natural agents as stabilizers and reducing agents, have shown promising results in combating MDR. These nanoparticles possess strong antimicrobial properties against different strains of Gram-positive and Gram-negative, making them suitable for various industries, including food, pharmaceuticals, coatings, and medical devices. ZnO-NPs work by generating reactive oxygen species, releasing zinc ions (Zn2+), disrupting the bacterial cell membrane, interfering with metabolic processes and genetic material, and inducing oxidative stress and apoptosis. However, more research is needed to refine synthesis techniques, control size and morphology, and increase antibacterial efficacy. To fully understand their potential, interactions with proteins, DNA, and bacterial cell walls must also be examined. Investigating the synergistic potential of biogenic ZnO NPs with conventional antibacterial treatments could enhance therapeutic effectiveness while minimizing the risk of resistance emergence. Here we provide insight into the advancements in biogenic synthesis of nanoparticles using bio extracts and their applications in antimicrobial resistance as well as various factors affecting the synthesis process and characterization techniques for ZnO NPs. Recent studies on the antimicrobial activity of biogenic ZnO NPs against different pathogens and their mechanisms of action are discussed. Furthermore, potential applications of biogenic ZnO NPs as antimicrobial agents are highlighted.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"7 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140617613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-09DOI: 10.1149/2162-8777/ad3980
Guorong Wu, Xiaokang Chen, Xuanrong Gu, Yiqiu Wu
The occurrence and variation of wet-etched structures on R-plane substrates of sapphire were analyzed according to the distribution of drilling rates of typical crystal planes. First, the experiment for etching the sapphire hemisphere was conducted to obtain the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume). Then, the transfer matrix was applied to transform the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) into the distribution of etching rates with R-plane as the rotation center. The positive curvature maximum identification method was then applied to obtain the distribution of drilling rates of typical crystal planes on R-plane substrates. Finally, the occurrence and variation of polygonal grooves with different mask configurations on R-plane substrates in the experimental etchant (236 °C, three parts H2SO4 and one part H3PO4 in terms of volume) were analyzed based on the distribution of drilling rates of typical crystal planes. This provides a basis for the application and development of GaN-based light-emitting diode devices.
根据典型晶面的钻孔速率分布，分析了蓝宝石 R 面基底上湿法蚀刻结构的发生和变化。首先，对蓝宝石半球进行了蚀刻实验，得到了以 C 面为旋转中心的蚀刻率在实验蚀刻液（体积比为 236 ℃、3 份 H2SO4 和 1 份 H3PO4）中的分布情况。然后，应用转移矩阵将实验蚀刻液（236 °C、三份 H2SO4 和一份 H3PO4（以体积计））中以 C 平面为旋转中心的蚀刻率分布转化为以 R 平面为旋转中心的蚀刻率分布。然后，应用正曲率最大识别法获得了 R 面基底上典型晶面的钻孔速率分布。最后，根据典型晶面的钻孔速率分布，分析了在实验蚀刻液（236 °C、3 份 H2SO4 和 1 份 H3PO4（以体积计））中，R 面基底上不同掩膜配置的多边形沟槽的出现和变化情况。这为基于氮化镓的发光二极管器件的应用和开发提供了依据。
{"title":"Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid","authors":"Guorong Wu, Xiaokang Chen, Xuanrong Gu, Yiqiu Wu","doi":"10.1149/2162-8777/ad3980","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3980","url":null,"abstract":"The occurrence and variation of wet-etched structures on R-plane substrates of sapphire were analyzed according to the distribution of drilling rates of typical crystal planes. First, the experiment for etching the sapphire hemisphere was conducted to obtain the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H<sub>2</sub>SO<sub>4</sub> and one part H<sub>3</sub>PO<sub>4</sub> in terms of volume). Then, the transfer matrix was applied to transform the distribution of etching rates with C-plane as the rotation center in the experimental etchant (236 °C, three parts H<sub>2</sub>SO<sub>4</sub> and one part H<sub>3</sub>PO<sub>4</sub> in terms of volume) into the distribution of etching rates with R-plane as the rotation center. The positive curvature maximum identification method was then applied to obtain the distribution of drilling rates of typical crystal planes on R-plane substrates. Finally, the occurrence and variation of polygonal grooves with different mask configurations on R-plane substrates in the experimental etchant (236 °C, three parts H<sub>2</sub>SO<sub>4</sub> and one part H<sub>3</sub>PO<sub>4</sub> in terms of volume) were analyzed based on the distribution of drilling rates of typical crystal planes. This provides a basis for the application and development of GaN-based light-emitting diode devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"20 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the ΦB and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the ΦB were reversible; specifically, the decrease in ΦB upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the ΦB of an as-loaded sample from 0.91 to 1.07 eV, revealing that the ΦB of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.
{"title":"Pt/GaN Schottky Barrier Height Lowering by Incorporated Hydrogen","authors":"Yoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide","doi":"10.1149/2162-8777/ad3959","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3959","url":null,"abstract":"Changes in the hydrogen-induced Schottky barrier height (<italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub>) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the <italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub> and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the <italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub> were reversible; specifically, the decrease in <italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub> upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the <italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub> of an as-loaded sample from 0.91 to 1.07 eV, revealing that the <italic toggle=\"yes\">Φ</italic>\u0000<sub>B</sub> of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"14 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140615973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-04-03DOI: 10.1149/2162-8777/ad3672
Alain E. Kaloyeros, Barry Arkles
Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
{"title":"Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques","authors":"Alain E. Kaloyeros, Barry Arkles","doi":"10.1149/2162-8777/ad3672","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3672","url":null,"abstract":"Silicon carbide (SiC<sub>x</sub>) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiC<sub>x</sub> thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiC<sub>x</sub> thin film innovations, focusing on PVD and other non-PVD and non-CVD SiC<sub>x</sub> coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"90 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140580446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-27DOI: 10.1149/2162-8777/ad3366
I. M. El Radaf, H. Y. S. Al-Zahrani
The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.
本研究采用化学沉积法在洁净的玻璃基底上沉积硫化铜铝锡（CATS4）薄层。X 射线衍射分析用于探究 CATS4 薄膜的晶体结构，即 CATS4 薄膜具有立方晶体结构。能量色散 X 射线分析表明，CATS4 薄膜中存在铜、铝、锡和 S 峰，它们的原子比接近 1:1:1:4。为了描述 CATS4 膜层的光学特性，对 400-2500 纳米光谱范围内的光学透射率和反射率进行了分光光度测量。CATS4 薄膜在 1.42 和 1.31 eV 之间实现了直接能隙转换。此外，增加膜层厚度还能提高 CATS4 薄膜的折射率和厄巴赫能。经过检测的 CATS4 薄膜随着厚度的增加显示出更好的光电特性，包括改善了光导率、光电阻率、光载流子浓度、弛豫时间和光迁移率。增加 CATS4 薄膜的厚度可提高其非线性光学指数。此外，热探针仪器验证了 CATS4 薄膜的 p 型半导体特性。
{"title":"Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films","authors":"I. M. El Radaf, H. Y. S. Al-Zahrani","doi":"10.1149/2162-8777/ad3366","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3366","url":null,"abstract":"The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS<sub>4</sub>) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS<sub>4</sub> films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS<sub>4</sub> films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS<sub>4</sub> layers. The CATS<sub>4</sub> films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS<sub>4</sub> films. The inspected CATS<sub>4</sub> films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS<sub>4</sub> films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS<sub>4</sub> films.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"72 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140316900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-26DOI: 10.1149/2162-8777/ad2c32
Paweł E. Tomaszewski
It is obvious and well known that, when starting studies on a given sample, it is necessary to be sure of the chemical and phase composition of the sample. The most ideal method is to verify this by X-ray (or neutron) diffraction and subsequent structural analysis. Such initial analysis must use the well-known set of assumptions based on 100 years of X-ray diffraction studies. Without the use of these assumptions or rules, the subsequent results of any studies will not be valuable and may be erroneous. The most important rule is that the diffraction pattern is a kind of fingerprint of the given crystal/compound. Thus, the second rule is that the diffraction pattern of the mixture of phases is a simple sum of diffraction patters from the components.
显而易见，众所周知，在开始对特定样品进行研究时，必须确定样品的化学成分和相组成。最理想的方法是通过 X 射线（或中子）衍射和随后的结构分析来验证。这种初步分析必须使用基于 100 年 X 射线衍射研究的一套众所周知的假设。如果不使用这些假设或规则，任何研究的后续结果都不会有价值，而且可能是错误的。最重要的规则是，衍射图样是特定晶体/化合物的一种指纹。因此，第二条规则是混合物的衍射图样是各组分衍射图样的简单总和。
{"title":"Comment on “Dielectric, Optical, and Magnetic Behaviors of Magnesium Iron-Based Double Perovskite” [ ECS J. Solid State Sci. Technol. , 11, 113003 (2022)]","authors":"Paweł E. Tomaszewski","doi":"10.1149/2162-8777/ad2c32","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2c32","url":null,"abstract":"It is obvious and well known that, when starting studies on a given sample, it is necessary to be sure of the chemical and phase composition of the sample. The most ideal method is to verify this by X-ray (or neutron) diffraction and subsequent structural analysis. Such initial analysis must use the well-known set of assumptions based on 100 years of X-ray diffraction studies. Without the use of these assumptions or rules, the subsequent results of any studies will not be valuable and may be erroneous. The most important rule is that the diffraction pattern is a kind of <italic toggle=\"yes\">fingerprint</italic> of the given crystal/compound. Thus, the second rule is that the diffraction pattern of the mixture of phases is a simple sum of diffraction patters from the components.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"59 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-19DOI: 10.1149/2162-8777/ad2ed7
G. B. V. S. Lakshmi, Rahul K. Singh, Yashi Punia, Tarun K. Dhiman, Avinash K. Singh, Pratima R. Solanki
Copper oxide uncapped nanorods (UC-CuO), capped with cetyltrimethylammonium bromide (CTAB-CuO), and polyvinyl pyrrolidine (PVP-CuO) were utilized for interaction study of Aldicarb (A.D.) and Chlorpyrifos (C.P.) pesticides. Electron microscopy (FE-SEM & TEM) studies confirmed the nanocrystalline structure and nanorod morphology of UC-CuO, CTAB-CuO, and PVP-CuO. The contact angle study showed the hydrophilic nature of the UC-CuO and PVP-CuO with contact angle of 51° and 57°, respectively. While CTAB-CuO exhibited hydrophobic nature with a contact angle of more than 90°. Interaction study of UC-CuO, CTAB-CuO, and PVP-CuO with A.D. and C.P was conducted using UV–vis absorption study (in the 250–400 nm region). UC-CuO showed the specific detection with A.D., while CTAB-CuO have shown with C.P. without using any bio-recognition elements. PVP-CuO did not show systematic change with both pesticides confirming the capping agent-dependent specific interaction of the pesticides.
{"title":"Interaction Studies of PVP and CTAB Capped CuO Nanorods with Aldicarb and Chlorpyrifos","authors":"G. B. V. S. Lakshmi, Rahul K. Singh, Yashi Punia, Tarun K. Dhiman, Avinash K. Singh, Pratima R. Solanki","doi":"10.1149/2162-8777/ad2ed7","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2ed7","url":null,"abstract":"Copper oxide uncapped nanorods (UC-CuO), capped with cetyltrimethylammonium bromide (CTAB-CuO), and polyvinyl pyrrolidine (PVP-CuO) were utilized for interaction study of Aldicarb (A.D.) and Chlorpyrifos (C.P.) pesticides. Electron microscopy (FE-SEM & TEM) studies confirmed the nanocrystalline structure and nanorod morphology of UC-CuO, CTAB-CuO, and PVP-CuO. The contact angle study showed the hydrophilic nature of the UC-CuO and PVP-CuO with contact angle of 51° and 57°, respectively. While CTAB-CuO exhibited hydrophobic nature with a contact angle of more than 90°. Interaction study of UC-CuO, CTAB-CuO, and PVP-CuO with A.D. and C.P was conducted using UV–vis absorption study (in the 250–400 nm region). UC-CuO showed the specific detection with A.D., while CTAB-CuO have shown with C.P. without using any bio-recognition elements. PVP-CuO did not show systematic change with both pesticides confirming the capping agent-dependent specific interaction of the pesticides.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"10 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-15DOI: 10.1149/2162-8777/ad2cfc
Jangwon Seo, Sanghuck Jeon, Jongwook Yoon, Joonho An, Yongsoo Choi, Hyunho Seok, Seunghwan Lee, Pengzhan Liu, Wookyung Jeon, Taesung Kim
Traditionally, the pad roughness has been maintained by wearing down the polyurethane pad with diamond disk. However, that method generates debris and reduces pad lifetime. This study propose a new approach to pad surface recovery by synthesizing a polyurethane-based raw material that exhibits shape memory behavior and can recover its shape upon heating. The findings suggest that the pad’s surface can be maintained by utilizing its shape memory trait and designing a system to heat the pad. The pad recovery tests were conducted using universal test machine (UTM) samples and found that, in terms of heat recovery, increasing the temperature had a greater effect than increasing the exposure time. CMP test was performed by using three conditioning potions: diamond disk conditioning, heat conditioning, and no conditioning. The results showed that pad asperity was recovered more efficiently with heat conditioning than with no conditioning (demonstrated by a 19% higher removal rate). The experimental results can be expected that combines diamond disk conditioning with heat conditioning could be a superior alternative for pad surface refreshment. Shape memory pads can return to their original form, leading to better chemical mechanical planarization (CMP) performance and an extended pad lifetime.
{"title":"Development of Novel Conditioning Method Using Thermal Shape Memory Characteristics of Polyurethane CMP Pad","authors":"Jangwon Seo, Sanghuck Jeon, Jongwook Yoon, Joonho An, Yongsoo Choi, Hyunho Seok, Seunghwan Lee, Pengzhan Liu, Wookyung Jeon, Taesung Kim","doi":"10.1149/2162-8777/ad2cfc","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2cfc","url":null,"abstract":"Traditionally, the pad roughness has been maintained by wearing down the polyurethane pad with diamond disk. However, that method generates debris and reduces pad lifetime. This study propose a new approach to pad surface recovery by synthesizing a polyurethane-based raw material that exhibits shape memory behavior and can recover its shape upon heating. The findings suggest that the pad’s surface can be maintained by utilizing its shape memory trait and designing a system to heat the pad. The pad recovery tests were conducted using universal test machine (UTM) samples and found that, in terms of heat recovery, increasing the temperature had a greater effect than increasing the exposure time. CMP test was performed by using three conditioning potions: diamond disk conditioning, heat conditioning, and no conditioning. The results showed that pad asperity was recovered more efficiently with heat conditioning than with no conditioning (demonstrated by a 19% higher removal rate). The experimental results can be expected that combines diamond disk conditioning with heat conditioning could be a superior alternative for pad surface refreshment. Shape memory pads can return to their original form, leading to better chemical mechanical planarization (CMP) performance and an extended pad lifetime.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"34 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-15DOI: 10.1149/2162-8777/ad2e1a
Shuwen Cui, Yulin Wu, Shuangshuang Hui, Qiang Li, Weiwei Liu
In 2004, graphene was discovered by Novoselov and Geim. With the development of technology，twisted bilayer graphene (tBLG) has become a hot research topic. On the basis of predecessors, we further study the confined spaces between twisted bilayer graphene. The interlayer spacing between them is expected to modify properties of atoms and molecules confined at the atomic interfaces. The effects of twist angle, interlayer spacing of the tBLG and temperature (20 K–70 K) on the equilibrium structure of argon cluster are systematically studied by means of molecular dynamics simulation with the tBLG being considered to be fixed. As the interlayer spacings of tBLGs with different twist angles increase at a fixed temperature 20 K, the equilibrium structures of the argon cluster transform from a monoatomic layer to multilayer structure. For different twist angles at the fixed interlayer spacing, the structures of the argon cluster gradually form periodic pattern (similar to moiré pattern). The effects of temperature and non-equiliblium suddenly heating process on the structures of argon clusters between tBLGs are also studied by molecular dynamics simulation. Our results may provide a theoretical support for the preparation of new carbon-based intercalated composites and the application of graphene.
{"title":"Argon Nanocluster Filled Between Twisted Bilayer Graphene: Molecular Dynamics Simulation","authors":"Shuwen Cui, Yulin Wu, Shuangshuang Hui, Qiang Li, Weiwei Liu","doi":"10.1149/2162-8777/ad2e1a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad2e1a","url":null,"abstract":"In 2004, graphene was discovered by Novoselov and Geim. With the development of technology，twisted bilayer graphene (tBLG) has become a hot research topic. On the basis of predecessors, we further study the confined spaces between twisted bilayer graphene. The interlayer spacing between them is expected to modify properties of atoms and molecules confined at the atomic interfaces. The effects of twist angle, interlayer spacing of the tBLG and temperature (20 K–70 K) on the equilibrium structure of argon cluster are systematically studied by means of molecular dynamics simulation with the tBLG being considered to be fixed. As the interlayer spacings of tBLGs with different twist angles increase at a fixed temperature 20 K, the equilibrium structures of the argon cluster transform from a monoatomic layer to multilayer structure. For different twist angles at the fixed interlayer spacing, the structures of the argon cluster gradually form periodic pattern (similar to moiré pattern). The effects of temperature and non-equiliblium suddenly heating process on the structures of argon clusters between tBLGs are also studied by molecular dynamics simulation. Our results may provide a theoretical support for the preparation of new carbon-based intercalated composites and the application of graphene.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"54 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140316974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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