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Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects最新文献

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Analysis of chip-to-chip power noise coupling on several SDRAM modules 几种SDRAM模块的片间功率噪声耦合分析
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409053
J. Wee, Seongsoo Lee, Yong-Ju Kim
This paper illustrates the noise characteristics under chip's operations according to types of packages and modules for DDR SDRAM. The impedance profiles and power noises are analyzed with SDRAM chips having TSOP package and FBGA package on TSOP-based DIMM and FBGA-based DIMM. In controversy with common concepts, the noise characteristics of FBGA package are more weak and sensitive than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.
本文根据DDR SDRAM的封装和模块类型,阐述了芯片工作时的噪声特性。用TSOP封装和FBGA封装的SDRAM芯片分别在TSOP和FBGA封装的DIMM上进行阻抗分布和功率噪声分析。与一般概念不同的是,FBGA封装的噪声特性比TSOP封装的噪声特性更弱、更敏感。此外,仿真结果表明,模块的去耦电容位置比封装的引线电感对控制自身和传递噪声特性更重要。因此,通过配电系统的设计,不仅要考虑封装类型,还要考虑整个模块系统,才能达到满足噪声抑制和隔离的目标规格。
{"title":"Analysis of chip-to-chip power noise coupling on several SDRAM modules","authors":"J. Wee, Seongsoo Lee, Yong-Ju Kim","doi":"10.1109/SPI.2004.1409053","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409053","url":null,"abstract":"This paper illustrates the noise characteristics under chip's operations according to types of packages and modules for DDR SDRAM. The impedance profiles and power noises are analyzed with SDRAM chips having TSOP package and FBGA package on TSOP-based DIMM and FBGA-based DIMM. In controversy with common concepts, the noise characteristics of FBGA package are more weak and sensitive than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115693878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 0.18/spl mu/m CMOS fully integrated 6.25Gbps single aggressor multi-rate crosstalk cancellation IC for legacy backplane and interconnect applications 一款0.18/spl mu/m CMOS全集成6.25Gbps单干扰多速率串扰消除IC,适用于传统背板和互连应用
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409009
F. Bien, A. Raghavan, Z. Nami, C. Lee, A. Kim, M. Vrazel, E. Gebara, S. Bajekal, B. Schmukler, J. Laskar
A multi-rate crosstalk canceller for active cancellation of near end cross talk (NEXT) caused by a single aggressor in a backplane channel environment has been demonstrated in this paper. The proposed IC enhances the performance of existing legacy backplane at higher data rates, thereby avoiding the costs associated with upgrading to higher end backplanes and connectors. The IC has been fabricated in a 0.18/spl mu/m CMOS process and the prototype test bench demonstrated capability of improving the bit-error rate (BER) performance in excess of 5 orders of magnitude at data rates up to 6.25Gbps.
本文演示了一种多速率串扰消除器,用于主动消除背板信道环境中由单个干扰源引起的近端串扰。拟议的IC在更高的数据速率下增强了现有传统背板的性能,从而避免了升级到更高端的背板和连接器的相关成本。该集成电路已在0.18/spl μ m CMOS工艺中制造,原型测试台证明了在高达6.25Gbps的数据速率下将误码率(BER)性能提高超过5个数量级的能力。
{"title":"A 0.18/spl mu/m CMOS fully integrated 6.25Gbps single aggressor multi-rate crosstalk cancellation IC for legacy backplane and interconnect applications","authors":"F. Bien, A. Raghavan, Z. Nami, C. Lee, A. Kim, M. Vrazel, E. Gebara, S. Bajekal, B. Schmukler, J. Laskar","doi":"10.1109/SPI.2004.1409009","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409009","url":null,"abstract":"A multi-rate crosstalk canceller for active cancellation of near end cross talk (NEXT) caused by a single aggressor in a backplane channel environment has been demonstrated in this paper. The proposed IC enhances the performance of existing legacy backplane at higher data rates, thereby avoiding the costs associated with upgrading to higher end backplanes and connectors. The IC has been fabricated in a 0.18/spl mu/m CMOS process and the prototype test bench demonstrated capability of improving the bit-error rate (BER) performance in excess of 5 orders of magnitude at data rates up to 6.25Gbps.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120990939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Black-box modelling by rational function approximation 用有理函数近似法建立黑箱模型
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409017
R. Gao, Y. Mekonnen, W. Beyene, J. Schutt-Ainé
In this paper, a rational function approach is used to approximate the transfer function of linear systems characterized by sampled data. The ill-conditioned Vandermonde-like matrix associated with the ordinary power series is avoided by using Chebyshev polynomials. Clenshaw's recurrence algorithm is applied in transforming the Chebyshev coefficients to the ordinary power series. The passivity of the system is enforced through certain constraints on the residues.
本文采用有理函数法逼近以抽样数据为特征的线性系统的传递函数。利用切比雪夫多项式避免了与普通幂级数相关的病态范德蒙德矩阵。应用克伦肖递归算法将切比雪夫系数转化为普通幂级数。系统的无源性是通过对残差的一定约束来实现的。
{"title":"Black-box modelling by rational function approximation","authors":"R. Gao, Y. Mekonnen, W. Beyene, J. Schutt-Ainé","doi":"10.1109/SPI.2004.1409017","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409017","url":null,"abstract":"In this paper, a rational function approach is used to approximate the transfer function of linear systems characterized by sampled data. The ill-conditioned Vandermonde-like matrix associated with the ordinary power series is avoided by using Chebyshev polynomials. Clenshaw's recurrence algorithm is applied in transforming the Chebyshev coefficients to the ordinary power series. The passivity of the system is enforced through certain constraints on the residues.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122563045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modelling the dynamic response of on-chip decoupling capacitors 片上去耦电容器的动态响应建模
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1408996
J. R. Vázquez, M. Meijer
High-speed digital circuits require increasing amounts of on-chip decoupling capacitors (decaps) to preserve power integrity. Therefore, proper modelling and analysis of the dynamic response of such decaps in the high frequency range is needed. This paper shows that, in that range, lumped decap models fail and have to be substituted by distributed models. A derivation of such distributed model based on physical grounds is presented and compared with SPICE non-quasi static MOS models.
高速数字电路需要越来越多的片上去耦电容(decaps)来保持功率完整性。因此,有必要对这类电容在高频范围内的动态响应进行建模和分析。本文表明,在这个范围内,集总模型是失败的,必须用分布式模型来代替。提出了基于物理依据的分布式模型的推导,并与SPICE非准静态MOS模型进行了比较。
{"title":"Modelling the dynamic response of on-chip decoupling capacitors","authors":"J. R. Vázquez, M. Meijer","doi":"10.1109/SPI.2004.1408996","DOIUrl":"https://doi.org/10.1109/SPI.2004.1408996","url":null,"abstract":"High-speed digital circuits require increasing amounts of on-chip decoupling capacitors (decaps) to preserve power integrity. Therefore, proper modelling and analysis of the dynamic response of such decaps in the high frequency range is needed. This paper shows that, in that range, lumped decap models fail and have to be substituted by distributed models. A derivation of such distributed model based on physical grounds is presented and compared with SPICE non-quasi static MOS models.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116605423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Issues and challenges of Gbps backplane connector characterization Gbps背板连接器特性的问题和挑战
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409005
C. Schuster, Y. Kwark, R. Frech, E. Klink, J. Diepenbrock, G. R. Edlund, T. Gneiting, R. Modinger
Current high-end inter-processor links run hundreds of signals at Gigabit per second data rates over one or two connectors and tens of inches of backplane. Suitable connectors have to fulfil tight crosstalk, reflection, and attenuation specifications. Accurate connector measurements and models are critical to the successful design of the whole link. However, due to high pin count and interdependencies with the backplane environment connector characterization is still a challenging task. Here, a 50 Ohm single-ended, pin-in-paste prototype connector system from ERNI is analyzed in detail. Comprehensive 3D full-wave EM simulations were done and compared to measurements. Several de-embedding techniques are presented to extract the connector response from the test environment. It will be shown that the connector footprint on the backplane has a major impact on the overall electrical performance.
目前的高端处理器间链路通过一个或两个连接器和几十英寸的背板以每秒千兆的数据速率运行数百个信号。合适的连接器必须满足严格的串扰、反射和衰减规范。准确的连接器测量和模型对于整个链路的成功设计至关重要。然而,由于高引脚数和与背板环境的相互依赖性,连接器的表征仍然是一项具有挑战性的任务。本文详细分析了ERNI公司的50欧姆单端粘贴式引脚原型连接器系统。进行了全面的三维全波电磁模拟,并与测量结果进行了比较。提出了几种从测试环境中提取连接器响应的去嵌入技术。将显示背板上的连接器占用面积对整体电气性能有重大影响。
{"title":"Issues and challenges of Gbps backplane connector characterization","authors":"C. Schuster, Y. Kwark, R. Frech, E. Klink, J. Diepenbrock, G. R. Edlund, T. Gneiting, R. Modinger","doi":"10.1109/SPI.2004.1409005","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409005","url":null,"abstract":"Current high-end inter-processor links run hundreds of signals at Gigabit per second data rates over one or two connectors and tens of inches of backplane. Suitable connectors have to fulfil tight crosstalk, reflection, and attenuation specifications. Accurate connector measurements and models are critical to the successful design of the whole link. However, due to high pin count and interdependencies with the backplane environment connector characterization is still a challenging task. Here, a 50 Ohm single-ended, pin-in-paste prototype connector system from ERNI is analyzed in detail. Comprehensive 3D full-wave EM simulations were done and compared to measurements. Several de-embedding techniques are presented to extract the connector response from the test environment. It will be shown that the connector footprint on the backplane has a major impact on the overall electrical performance.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131179707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Time-domain modeling of lossy substrates with constant loss tangent 具有恒定损耗正切的有耗基板的时域建模
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409036
A. Engin, W. Mathis, W. John, G. Sommer, H. Reichl
Lumped models that represent a lossy substrate with constant loss tangent over a given bandwidth are presented. Two network representations are given, which are based on the continued fraction expansion (CFE) of a causal network function, and the Debye model. Proposed models are compared with per unit length conductance and capacitance extracted from measurements of a stripline using the calibration comparison method.
在给定的带宽上,给出了具有恒定损耗正切的有损衬底的集总模型。给出了基于因果网络函数的连分数展开(CFE)和Debye模型的两种网络表示。利用标定比较法,将所提出的模型与从带状线测量中提取的单位长度电导和电容进行了比较。
{"title":"Time-domain modeling of lossy substrates with constant loss tangent","authors":"A. Engin, W. Mathis, W. John, G. Sommer, H. Reichl","doi":"10.1109/SPI.2004.1409036","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409036","url":null,"abstract":"Lumped models that represent a lossy substrate with constant loss tangent over a given bandwidth are presented. Two network representations are given, which are based on the continued fraction expansion (CFE) of a causal network function, and the Debye model. Proposed models are compared with per unit length conductance and capacitance extracted from measurements of a stripline using the calibration comparison method.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124163917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Bounding bus delay and noise effects of on-chip inductance 片上电感的边界总线延迟和噪声效应
Pub Date : 2004-05-09 DOI: 10.1109/SPI.2004.1409042
M. Linderman, D. Harris, D. Diaz
On-chip inductance depends on current return paths and is unreasonably computationally expensive to extract and model in the general case. A practical solution is to provide a well-defined power supply network so the current return paths are more predictable. This paper develops a model of bus delay and noise as a function of the physical dimensions of busses and the switching parameters. It applies this model to develop bounds on the inductive effects on delay and noise for on-chip busses in 180, 130 and 100 nm processes. If one power or ground line is interdigitated with every four bus lines, the RLC noise and delay are no more than 7% greater than RC models would predict. Designers may treat this delay and noise as small penalties for all busses rather than having to individually extract and model inductance on each bus.
片上电感依赖于电流返回路径,在一般情况下,提取和建模的计算成本是不合理的。一个实际的解决方案是提供一个定义良好的供电网络,使电流返回路径更可预测。本文建立了母线时延和噪声随母线物理尺寸和开关参数的函数模型。并应用该模型对180,130和100nm制程的片上总线的延迟和噪声的感应效应进行了边界计算。如果一条电源线或地线与每四条母线交叉,RLC噪声和延迟比RC模型预测的要大不超过7%。设计人员可以将这种延迟和噪声作为对所有母线的小惩罚,而不必在每个母线上单独提取和建模电感。
{"title":"Bounding bus delay and noise effects of on-chip inductance","authors":"M. Linderman, D. Harris, D. Diaz","doi":"10.1109/SPI.2004.1409042","DOIUrl":"https://doi.org/10.1109/SPI.2004.1409042","url":null,"abstract":"On-chip inductance depends on current return paths and is unreasonably computationally expensive to extract and model in the general case. A practical solution is to provide a well-defined power supply network so the current return paths are more predictable. This paper develops a model of bus delay and noise as a function of the physical dimensions of busses and the switching parameters. It applies this model to develop bounds on the inductive effects on delay and noise for on-chip busses in 180, 130 and 100 nm processes. If one power or ground line is interdigitated with every four bus lines, the RLC noise and delay are no more than 7% greater than RC models would predict. Designers may treat this delay and noise as small penalties for all busses rather than having to individually extract and model inductance on each bus.","PeriodicalId":119776,"journal":{"name":"Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2004-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134405169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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Proceedings. 8th IEEE Workshop on Signal Propagation on Interconnects
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