Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic devices, specifically focusing on photodetectors and active displays. By discussing the current challenges and limitations of lead-based optoelectronics, we find the exciting potential of on-chip, in-situ fabrication methods for realizing high-performance optoelectronic systems.
{"title":"Recent advances in monolithic-integrated lead-based optoelectronic devices.","authors":"Shaoheng Xu, Jiajun Luo, Haisheng Song, Jiang Tang","doi":"10.1007/s12200-025-00158-2","DOIUrl":"10.1007/s12200-025-00158-2","url":null,"abstract":"<p><p>Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic devices, specifically focusing on photodetectors and active displays. By discussing the current challenges and limitations of lead-based optoelectronics, we find the exciting potential of on-chip, in-situ fabrication methods for realizing high-performance optoelectronic systems.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"13"},"PeriodicalIF":4.1,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12158882/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144266085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-06-11DOI: 10.1007/s12200-025-00157-3
Hongqing Li, Wenjing Tang, Yingshuang Shan, Jing Wang, Kai Jiang, Mingqi Fan, Tao Chen, Cheng Zhou, Wei Xia
For 2 μm all-solid-state lasers, pulse modulation methods based on low-dimensional nanomaterial saturable absorbers (SAs) offer advantages such as compact structure, low cost, and ease of implementation. The construction of stable, highly nonlinear low-dimensional nanomaterial SAs is an urgent issue to be addressed. In this paper, two types of black phosphorus/rhenium disulfide (BP/ReS2) heterojunction with high stability were prepared separately by liquid phase exfoliation (LPE) and mechanical exfoliation (ME) methods, the nonlinear saturable absorption characteristics of the two types of heterojunctions have been characterized in detail. Then, the pulse modulation applications of these two materials have been studied in a 2 μm all-solid-state thulium-doped yttrium aluminum perovskite (Tm:YAP) passively Q-switched pulsed laser. The BP/ReS2 heterojunction SA prepared by the LPE method demonstrates a thinner thickness and lower non-saturation optical loss, which achieved the maximum average output power 528 mW at a pump power of 6.37 W, with a narrowest pulse width of 366 ns, and a maximum peak power of 28.85 W. These results indicate that the BP/ReS2 heterojunction SA has great potential for optical modulation device applications.
{"title":"Nonlinear saturable absorption properties of BP/ReS<sub>2</sub> heterojunction and its application in 2 μm all-solid-state lasers.","authors":"Hongqing Li, Wenjing Tang, Yingshuang Shan, Jing Wang, Kai Jiang, Mingqi Fan, Tao Chen, Cheng Zhou, Wei Xia","doi":"10.1007/s12200-025-00157-3","DOIUrl":"10.1007/s12200-025-00157-3","url":null,"abstract":"<p><p>For 2 μm all-solid-state lasers, pulse modulation methods based on low-dimensional nanomaterial saturable absorbers (SAs) offer advantages such as compact structure, low cost, and ease of implementation. The construction of stable, highly nonlinear low-dimensional nanomaterial SAs is an urgent issue to be addressed. In this paper, two types of black phosphorus/rhenium disulfide (BP/ReS<sub>2</sub>) heterojunction with high stability were prepared separately by liquid phase exfoliation (LPE) and mechanical exfoliation (ME) methods, the nonlinear saturable absorption characteristics of the two types of heterojunctions have been characterized in detail. Then, the pulse modulation applications of these two materials have been studied in a 2 μm all-solid-state thulium-doped yttrium aluminum perovskite (Tm:YAP) passively Q-switched pulsed laser. The BP/ReS<sub>2</sub> heterojunction SA prepared by the LPE method demonstrates a thinner thickness and lower non-saturation optical loss, which achieved the maximum average output power 528 mW at a pump power of 6.37 W, with a narrowest pulse width of 366 ns, and a maximum peak power of 28.85 W. These results indicate that the BP/ReS<sub>2</sub> heterojunction SA has great potential for optical modulation device applications.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"14"},"PeriodicalIF":4.1,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12158896/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144266084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Under the excitation of a 980 nm laser, the visible upconversion (UC) luminescence of Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as well as the Yb3+/Er3+ ions codoped NaBi(MoO4)2 crystal were investigated comprehensively. The results indicate that all three samples exhibit two significant green emission bands and a weak red emission band in the visible band corresponding to the transitions of 2H11/2/4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 of Er3+ ions, respectively. Through the variable power density spectra of three different samples, the relationship between the energy back transfer (EBT) process of Yb3+-Er3+ ions and the power density point and Yb3+ ion concentration was investigated. The EBT process was observed in both the Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as confirmed by the luminescence image of the sample. At high power density, the Yb3+ ions self-activated sample exhibited yellow luminescence, with the crystal appearing later than the phosphor. In contrast, the NaBi(MoO4)2 crystal displayed bright green emission within the measured power density range. In addition, by monitoring the relative intensity change of Yb3+ emission in 5 at% Er3+:NaYb(MoO4)2 crystal, the generation of EBT process in self-activated samples at high power density is more directly explained. These experimental results provide a reliable basis for our comprehensive understanding of the EBT mechanism, and also provide a reliable direction for the final determination of the optimal excitation power density for optical temperature measurement.
{"title":"Effect of energy back transfer from Er<sup>3+</sup> to Yb<sup>3+</sup> ions on the upconversion luminescence of Er:NaYb(MoO<sub>4</sub>)<sub>2</sub> and Yb,Er:NaBi(MoO<sub>4</sub>)<sub>2</sub>.","authors":"Miaomiao Wang, Mengyu Zhang, Shoujun Ding, Haitang Hu, Chuancheng Zhang, Yong Zou","doi":"10.1007/s12200-025-00155-5","DOIUrl":"10.1007/s12200-025-00155-5","url":null,"abstract":"<p><p>Under the excitation of a 980 nm laser, the visible upconversion (UC) luminescence of Er<sup>3+</sup> ions doped Yb<sup>3+</sup> ions self-activated NaYb(MoO<sub>4</sub>)<sub>2</sub> phosphor and crystal, as well as the Yb<sup>3+</sup>/Er<sup>3+</sup> ions codoped NaBi(MoO<sub>4</sub>)<sub>2</sub> crystal were investigated comprehensively. The results indicate that all three samples exhibit two significant green emission bands and a weak red emission band in the visible band corresponding to the transitions of <sup>2</sup>H<sub>11/2</sub>/<sup>4</sup>S<sub>3/2</sub> → <sup>4</sup>I<sub>15/2</sub> and <sup>4</sup>F<sub>9/2</sub> → <sup>4</sup>I<sub>15/2</sub> of Er<sup>3+</sup> ions, respectively. Through the variable power density spectra of three different samples, the relationship between the energy back transfer (EBT) process of Yb<sup>3+</sup>-Er<sup>3+</sup> ions and the power density point and Yb<sup>3+</sup> ion concentration was investigated. The EBT process was observed in both the Er<sup>3+</sup> ions doped Yb<sup>3+</sup> ions self-activated NaYb(MoO<sub>4</sub>)<sub>2</sub> phosphor and crystal, as confirmed by the luminescence image of the sample. At high power density, the Yb<sup>3+</sup> ions self-activated sample exhibited yellow luminescence, with the crystal appearing later than the phosphor. In contrast, the NaBi(MoO<sub>4</sub>)<sub>2</sub> crystal displayed bright green emission within the measured power density range. In addition, by monitoring the relative intensity change of Yb<sup>3+</sup> emission in 5 at% Er<sup>3+</sup>:NaYb(MoO<sub>4</sub>)<sub>2</sub> crystal, the generation of EBT process in self-activated samples at high power density is more directly explained. These experimental results provide a reliable basis for our comprehensive understanding of the EBT mechanism, and also provide a reliable direction for the final determination of the optimal excitation power density for optical temperature measurement.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"12"},"PeriodicalIF":4.1,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12081802/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144077478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study explores the application of cold plate liquid cooling technology in co-packaged optics (CPO). By integrating optical modules and the switch chip on the same substrate, CPO shortens the electrical interconnection distance, effectively solving the problems of high power consumption and poor signal integrity of traditional pluggable optical modules under high bandwidth. However, the surge in power density and the thermal crosstalk resulting from high integration density make thermal management one of the key challenges that constrain the reliability of high-capacity co-packaged optics. For the unique architecture of CPO, this study analyzes its heat dissipation needs in detail, and a thermal management scheme is designed. The thermal management scheme is simulated and optimized based on the Navier-Stokes equation. The simulation results show that, in a 51.2 Tbit/s CPO system, the junction temperature of the switch chip is 97.3 °C, the maximum junction temperature of the optical modules is 31.3 °C, and the temperature difference between the optical modules is 2.4 °C to 1.2 °C. To verify the simulation results, a thermal test experimental platform is built, and the experimental results show that the temperature simulation difference is within 4% and the pressure change trend is consistent with the simulation. Combining the experimental data and simulation results, the designed heat sink can satisfy the heat dissipation demands of the 51.2 Tbit/s bandwidth CPO system. This conclusion demonstrates the potential of liquid-cooling technology in CPO, providing support for research on liquid-cooling technology in the CPO. The design provides a theoretical and practical basis for the high performance and reliability of optoelectronic integration technology in wavelength division multiplexing (WDM) systems and micro-ring device applications, contributing to the application of next-generation optical communication networks.
{"title":"Simulation and experimental investigation of liquid-cooling thermal management for high-bandwidth co-packaged optics.","authors":"Senhan Wu, Song Wen, Huimin He, Jianyu Feng, Chuan Chen, Haiyun Xue","doi":"10.1007/s12200-025-00156-4","DOIUrl":"10.1007/s12200-025-00156-4","url":null,"abstract":"<p><p>This study explores the application of cold plate liquid cooling technology in co-packaged optics (CPO). By integrating optical modules and the switch chip on the same substrate, CPO shortens the electrical interconnection distance, effectively solving the problems of high power consumption and poor signal integrity of traditional pluggable optical modules under high bandwidth. However, the surge in power density and the thermal crosstalk resulting from high integration density make thermal management one of the key challenges that constrain the reliability of high-capacity co-packaged optics. For the unique architecture of CPO, this study analyzes its heat dissipation needs in detail, and a thermal management scheme is designed. The thermal management scheme is simulated and optimized based on the Navier-Stokes equation. The simulation results show that, in a 51.2 Tbit/s CPO system, the junction temperature of the switch chip is 97.3 °C, the maximum junction temperature of the optical modules is 31.3 °C, and the temperature difference between the optical modules is 2.4 °C to 1.2 °C. To verify the simulation results, a thermal test experimental platform is built, and the experimental results show that the temperature simulation difference is within 4% and the pressure change trend is consistent with the simulation. Combining the experimental data and simulation results, the designed heat sink can satisfy the heat dissipation demands of the 51.2 Tbit/s bandwidth CPO system. This conclusion demonstrates the potential of liquid-cooling technology in CPO, providing support for research on liquid-cooling technology in the CPO. The design provides a theoretical and practical basis for the high performance and reliability of optoelectronic integration technology in wavelength division multiplexing (WDM) systems and micro-ring device applications, contributing to the application of next-generation optical communication networks.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"11"},"PeriodicalIF":4.1,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12078904/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144063452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
<p><p>Taking the advantage of ultrafast optical linear and nonlinear effects, all-optical signal processing (AOSP) enables manipulation, regeneration, and computing of information directly in optical domain without resorting to electronics. As a promising photonic integration platform, silicon-on-insulator (SOI) has the advantage of complementary metal oxide semiconductor (CMOS) compatibility, low-loss, compact size as well as large optical nonlinearities. In this paper, we review the recent progress in the project granted to develop silicon-based reconfigurable AOSP chips, which aims to combine the merits of AOSP and silicon photonics to solve the unsustainable cost and energy challenges in future communication and big data applications. Three key challenges are identified in this project: (1) how to finely manipulate and reconfigure optical fields, (2) how to achieve ultra-low loss integrated silicon waveguides and significant enhancement of nonlinear effects, (3) how to mitigate crosstalk between optical, electrical and thermal components. By focusing on these key issues, the following major achievements are realized during the project. First, ultra-low loss silicon-based waveguides as well as ultra-high quality microresonators are developed by advancing key fabrication technologies as well as device structures. Integrated photonic filters with bandwidth and free spectral range reconfigurable in a wide range were realized to finely manipulate and select input light fields with a high degree of freedom. Second, several mechanisms and new designs that aim at nonlinear enhancement have been proposed, including optical ridge waveguides with reverse biased PIN junction, slot waveguides, multimode waveguides and parity-time symmetry coupled microresonators. Advanced AOSP operations are verified with these novel designs. Logical computations at 100 Gbit/s were demonstrated with self-developed, monolithic integrated programmable optical logic array. High-dimensional multi-value logic operations based on the four-wave mixing effect are realized. Multi-channel all-optical amplitude and phase regeneration technology is developed, and a multi-channel, multi-format, reconfigurable all-optical regeneration chip is realized. Expanding regeneration capacity via spatial dimension is also verified. Third, the crosstalk from optical as well as thermal coupling due to high-density integration are mitigated by developing novel optical designs and advanced packaging technologies, enabling high-density, small size, multi-channel and multi-functional operation with low power consumption. Finally, four programmable AOSP chips are developed, i.e., programmable photonic filter chip, programmable photonic logic operation chip, multi-dimensional all-optical regeneration chip, and multi-channel and multi-functional AOSP chip with packaging. The major achievements developed in this project pave the way toward ultra-low loss, high-speed, high-efficient, high-density informat
{"title":"Progress in silicon-based reconfigurable and programmable all-optical signal processing chips.","authors":"Jing Xu, Wenchan Dong, Qingzhong Huang, Yujia Zhang, Yuchen Yin, Zhenyu Zhao, Desheng Zeng, Xiaoyan Gao, Wentao Gu, Zihao Yang, Hanghang Li, Xinjie Han, Yong Geng, Kunpeng Zhai, Bei Chen, Xin Fu, Lei Lei, Xiaojun Wu, Jianji Dong, Yikai Su, Ming Li, Jianguo Liu, Ninghua Zhu, Xuhan Guo, Heng Zhou, Huashun Wen, Kun Qiu, Xinliang Zhang","doi":"10.1007/s12200-025-00154-6","DOIUrl":"10.1007/s12200-025-00154-6","url":null,"abstract":"<p><p>Taking the advantage of ultrafast optical linear and nonlinear effects, all-optical signal processing (AOSP) enables manipulation, regeneration, and computing of information directly in optical domain without resorting to electronics. As a promising photonic integration platform, silicon-on-insulator (SOI) has the advantage of complementary metal oxide semiconductor (CMOS) compatibility, low-loss, compact size as well as large optical nonlinearities. In this paper, we review the recent progress in the project granted to develop silicon-based reconfigurable AOSP chips, which aims to combine the merits of AOSP and silicon photonics to solve the unsustainable cost and energy challenges in future communication and big data applications. Three key challenges are identified in this project: (1) how to finely manipulate and reconfigure optical fields, (2) how to achieve ultra-low loss integrated silicon waveguides and significant enhancement of nonlinear effects, (3) how to mitigate crosstalk between optical, electrical and thermal components. By focusing on these key issues, the following major achievements are realized during the project. First, ultra-low loss silicon-based waveguides as well as ultra-high quality microresonators are developed by advancing key fabrication technologies as well as device structures. Integrated photonic filters with bandwidth and free spectral range reconfigurable in a wide range were realized to finely manipulate and select input light fields with a high degree of freedom. Second, several mechanisms and new designs that aim at nonlinear enhancement have been proposed, including optical ridge waveguides with reverse biased PIN junction, slot waveguides, multimode waveguides and parity-time symmetry coupled microresonators. Advanced AOSP operations are verified with these novel designs. Logical computations at 100 Gbit/s were demonstrated with self-developed, monolithic integrated programmable optical logic array. High-dimensional multi-value logic operations based on the four-wave mixing effect are realized. Multi-channel all-optical amplitude and phase regeneration technology is developed, and a multi-channel, multi-format, reconfigurable all-optical regeneration chip is realized. Expanding regeneration capacity via spatial dimension is also verified. Third, the crosstalk from optical as well as thermal coupling due to high-density integration are mitigated by developing novel optical designs and advanced packaging technologies, enabling high-density, small size, multi-channel and multi-functional operation with low power consumption. Finally, four programmable AOSP chips are developed, i.e., programmable photonic filter chip, programmable photonic logic operation chip, multi-dimensional all-optical regeneration chip, and multi-channel and multi-functional AOSP chip with packaging. The major achievements developed in this project pave the way toward ultra-low loss, high-speed, high-efficient, high-density informat","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"10"},"PeriodicalIF":4.1,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12069217/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143965220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-22DOI: 10.1007/s12200-025-00153-7
Wenjiang Ye, Aoyue Chen, Ping Fu, Jiang Tang, Chao Chen
The power conversion efficiency of all-perovskite tandem solar cells is predominantly constrained by optical absorption losses, especially reflection losses. In this simulation study, we propose the optimization of a dual-interface serrated microstructure to mitigate these optical reflection losses in all-perovskite tandem solar cells. By adjusting the geometry of the periodic serrated structures at both the front interface and the back electrode, we enhance light absorption in the wide-bandgap perovskite layer and promote light scattering in the narrow-bandgap perovskite layer. The structural modification reduces the reflection-induced photocurrent density loss from 4.47 to 3.65 mA cm-2. It is expected to boost the efficiency of all-perovskite tandem solar cells to approximately 31.13%, representing a 3.41% increase. The dual-interface optimization effectively suppresses reflection losses and improves the overall photocurrent of all-perovskite tandem solar cells. These results offer a promising strategy for minimizing optical losses and enhancing device performance in all-perovskite tandem solar cells.
全钙钛矿串联太阳能电池的功率转换效率主要受光吸收损耗,特别是反射损耗的制约。在这项模拟研究中,我们提出优化双界面锯齿状微观结构,以减轻全钙钛矿串联太阳能电池中的这些光学反射损失。通过调整前后电极界面的周期性锯齿结构的几何形状,增强了宽禁带钙钛矿层的光吸收,促进了窄禁带钙钛矿层的光散射。结构的改变将反射引起的光电流密度损失从4.47 mA cm-2降低到3.65 mA cm-2。预计将把全钙钛矿串联太阳能电池的效率提高到约31.13%,代表3.41%的增长。双界面优化有效地抑制了反射损耗,提高了全钙钛矿串联太阳能电池的整体光电流。这些结果为最小化光损耗和提高全钙钛矿串联太阳能电池的器件性能提供了一个有前途的策略。
{"title":"Simulation study of reducing reflection losses in all-perovskite tandem solar cells through dual serrated structure.","authors":"Wenjiang Ye, Aoyue Chen, Ping Fu, Jiang Tang, Chao Chen","doi":"10.1007/s12200-025-00153-7","DOIUrl":"https://doi.org/10.1007/s12200-025-00153-7","url":null,"abstract":"<p><p>The power conversion efficiency of all-perovskite tandem solar cells is predominantly constrained by optical absorption losses, especially reflection losses. In this simulation study, we propose the optimization of a dual-interface serrated microstructure to mitigate these optical reflection losses in all-perovskite tandem solar cells. By adjusting the geometry of the periodic serrated structures at both the front interface and the back electrode, we enhance light absorption in the wide-bandgap perovskite layer and promote light scattering in the narrow-bandgap perovskite layer. The structural modification reduces the reflection-induced photocurrent density loss from 4.47 to 3.65 mA cm<sup>-2</sup>. It is expected to boost the efficiency of all-perovskite tandem solar cells to approximately 31.13%, representing a 3.41% increase. The dual-interface optimization effectively suppresses reflection losses and improves the overall photocurrent of all-perovskite tandem solar cells. These results offer a promising strategy for minimizing optical losses and enhancing device performance in all-perovskite tandem solar cells.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"9"},"PeriodicalIF":4.1,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12014966/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143976010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-09DOI: 10.1007/s12200-025-00150-w
Abinaya Mayavan, Aarthi Kannan, Sakthivel Gandhi
Silica nanoparticles were used to develop a bluish-green emitting Ba2SiO4:Eu2+ phosphor, demonstrating their potential for white light applications. The phosphor showed a 48% enhancement of emission intensity compared to conventional silica-assisted phosphors. The use of silica nanoparticles as a precursor could lead to the creation of a more homogeneous distribution of cations and dopant ions. This uniform distribution could facilitate the proper infusion of dopants into the crystal host, resulting in improved emission. The phosphor exhibited high thermal stability, with 56% of its luminescence intensity maintained even at 190 °C compared to room temperature. To reduce thermal stress, a flexible remote phosphor has been developed successfully using optimized silica nanoparticles assisted Ba2SiO4:Eu2+ phosphor.
{"title":"Silica nanoparticles assisted Ba<sub>2</sub>SiO<sub>4</sub>:Eu<sup>2+</sup>-a bluish-green emitting remote phosphor for white light application.","authors":"Abinaya Mayavan, Aarthi Kannan, Sakthivel Gandhi","doi":"10.1007/s12200-025-00150-w","DOIUrl":"10.1007/s12200-025-00150-w","url":null,"abstract":"<p><p>Silica nanoparticles were used to develop a bluish-green emitting Ba<sub>2</sub>SiO<sub>4</sub>:Eu<sup>2+</sup> phosphor, demonstrating their potential for white light applications. The phosphor showed a 48% enhancement of emission intensity compared to conventional silica-assisted phosphors. The use of silica nanoparticles as a precursor could lead to the creation of a more homogeneous distribution of cations and dopant ions. This uniform distribution could facilitate the proper infusion of dopants into the crystal host, resulting in improved emission. The phosphor exhibited high thermal stability, with 56% of its luminescence intensity maintained even at 190 °C compared to room temperature. To reduce thermal stress, a flexible remote phosphor has been developed successfully using optimized silica nanoparticles assisted Ba<sub>2</sub>SiO<sub>4</sub>:Eu<sup>2+</sup> phosphor.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"8"},"PeriodicalIF":4.1,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11981998/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143811029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-04-03DOI: 10.1007/s12200-025-00151-9
Silvia Ortín, Moritz Pflüger, Apostolos Argyris
The integration of machine learning with photonic and optoelectronic components is progressing rapidly, offering the potential for high-speed bio-inspired computing platforms. In this work, we employ an experimental fiber-based dendritic structure with adaptive plasticity for a learning-and-control virtual task. Specifically, we develop a closed-loop controller embedded in a single-mode fiber optical dendritic unit (ODU) that incorporates Hebbian learning principles, and we test it in a hypothetical temperature stabilization task. Our optoelectronic system operates at 1 GHz signaling and sampling rates and applies plasticity rules through the direct modulation of semiconductor optical amplifiers. Although the input correlation (ICO) learning rule we consider here is computed digitally from the experimental output of the optoelectronic system, this output is fed back into the plastic properties of the ODU physical substrate, enabling autonomous learning. In this specific configuration, we utilize only three plastic dendritic optical branches with exclusively positive weighting. We demonstrate that, despite variations in the physical system's parameters, the application of the ICO learning rule effectively mitigates temperature disturbances, ensuring robust performance. These results encourage an all-hardware solution, where optimizing feedback loop speed and embedding the ICO rule will enable continuous stabilization, finalizing a real-time platform operating at up to 1 GHz.
{"title":"Temperature stabilization with Hebbian learning using an autonomous optoelectronic dendritic unit.","authors":"Silvia Ortín, Moritz Pflüger, Apostolos Argyris","doi":"10.1007/s12200-025-00151-9","DOIUrl":"10.1007/s12200-025-00151-9","url":null,"abstract":"<p><p>The integration of machine learning with photonic and optoelectronic components is progressing rapidly, offering the potential for high-speed bio-inspired computing platforms. In this work, we employ an experimental fiber-based dendritic structure with adaptive plasticity for a learning-and-control virtual task. Specifically, we develop a closed-loop controller embedded in a single-mode fiber optical dendritic unit (ODU) that incorporates Hebbian learning principles, and we test it in a hypothetical temperature stabilization task. Our optoelectronic system operates at 1 GHz signaling and sampling rates and applies plasticity rules through the direct modulation of semiconductor optical amplifiers. Although the input correlation (ICO) learning rule we consider here is computed digitally from the experimental output of the optoelectronic system, this output is fed back into the plastic properties of the ODU physical substrate, enabling autonomous learning. In this specific configuration, we utilize only three plastic dendritic optical branches with exclusively positive weighting. We demonstrate that, despite variations in the physical system's parameters, the application of the ICO learning rule effectively mitigates temperature disturbances, ensuring robust performance. These results encourage an all-hardware solution, where optimizing feedback loop speed and embedding the ICO rule will enable continuous stabilization, finalizing a real-time platform operating at up to 1 GHz.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"7"},"PeriodicalIF":4.1,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11965054/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143772077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The progressive number of old adults with cognitive impairment worldwide and the lack of effective pharmacologic therapies require the development of non-pharmacologic strategies. The photobiomodulation (PBM) is a promising method in prevention of early or mild age-related cognitive impairments. However, it remains unclear the efficacy of PBM for old patients with significant age-related cognitive dysfunction. In our study on male mice, we show a gradual increase in the brain amyloid beta (Aβ) levels and a decrease in brain drainage with age, which, however, is associated with a decline in cognitive function only in old (24 months of age) mice but not in middle-aged (12 months of age) and young (3 month of age) animals. These age-related features are accompanied by the development of hyperplasia of the meningeal lymphatic vessels (MLVs) in old mice underlying the decrease in brain drainage. PBM improves cognitive training exercises and Aβ clearance only in young and middle-aged mice, while old animals are not sensitive to PBM. These results clearly demonstrate that the PBM effects on cognitive function are correlated with age-mediated changes in the MLV network and may be effective if the MLV function is preserved. These findings expand fundamental knowledge about age differences in the effectiveness of PBM for improvement of cognitive functions and Aβ clearance as well as about the lymphatic mechanisms responsible for age decline in sensitivity to the therapeutic PBM effects.
随着世界范围内老年认知障碍患者数量的增加和有效药物治疗的缺乏,需要开发非药物治疗策略。光生物调节(PBM)是预防早期或轻度年龄相关认知障碍的一种很有前途的方法。然而,目前尚不清楚PBM对有明显年龄相关认知功能障碍的老年患者的疗效。在我们对雄性小鼠的研究中,我们发现随着年龄的增长,大脑淀粉样蛋白β (a β)水平逐渐增加,脑引流液减少,然而,这只与老年(24个月大)小鼠的认知功能下降有关,而与中年(12个月大)和年轻(3个月大)小鼠的认知功能下降无关。这些与年龄相关的特征伴随着老年小鼠脑膜淋巴管(mlv)增生的发展,这是脑引流减少的基础。PBM仅在中青年小鼠中改善认知训练和Aβ清除,而老年小鼠对PBM不敏感。这些结果清楚地表明,PBM对认知功能的影响与年龄介导的MLV网络变化有关,如果MLV功能保持不变,PBM对认知功能的影响可能是有效的。这些发现扩大了对PBM在改善认知功能和Aβ清除方面的有效性的年龄差异的基本认识,以及对PBM治疗效果敏感性随年龄下降的淋巴机制。
{"title":"Age as a limiting factor for effectiveness of photostimulation of brain drainage and cognitive functions.","authors":"Terskov Andrey, Shirokov Alexander, Blokhina Inna, Zlatogorskaya Daria, Adushkina Viktoria, Semiachkina-Glushkovskaia Anastasiia, Atul Kumar, Fedosov Ivan, Evsukova Arina, Semyachkina-Glushkovskaya Oxana","doi":"10.1007/s12200-025-00149-3","DOIUrl":"10.1007/s12200-025-00149-3","url":null,"abstract":"<p><p>The progressive number of old adults with cognitive impairment worldwide and the lack of effective pharmacologic therapies require the development of non-pharmacologic strategies. The photobiomodulation (PBM) is a promising method in prevention of early or mild age-related cognitive impairments. However, it remains unclear the efficacy of PBM for old patients with significant age-related cognitive dysfunction. In our study on male mice, we show a gradual increase in the brain amyloid beta (Aβ) levels and a decrease in brain drainage with age, which, however, is associated with a decline in cognitive function only in old (24 months of age) mice but not in middle-aged (12 months of age) and young (3 month of age) animals. These age-related features are accompanied by the development of hyperplasia of the meningeal lymphatic vessels (MLVs) in old mice underlying the decrease in brain drainage. PBM improves cognitive training exercises and Aβ clearance only in young and middle-aged mice, while old animals are not sensitive to PBM. These results clearly demonstrate that the PBM effects on cognitive function are correlated with age-mediated changes in the MLV network and may be effective if the MLV function is preserved. These findings expand fundamental knowledge about age differences in the effectiveness of PBM for improvement of cognitive functions and Aβ clearance as well as about the lymphatic mechanisms responsible for age decline in sensitivity to the therapeutic PBM effects.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"6"},"PeriodicalIF":4.1,"publicationDate":"2025-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11958890/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143751727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-24DOI: 10.1007/s12200-025-00152-8
Liang Sun, Xiping He, Zhiyuan He, Feihu Zhang, Chencheng Peng, Ben Chen, Runda Guo, Lei Wang
Metal halide perovskites have become one of the most competitive new-generation optoelectronic materials due to their excellent optoelectronic properties. Vacuum evaporation can produce high-purity and large-area films, leading to the wide application of this method in the semiconductor industry and optoelectronics field. However, the electroluminescent performance of vacuum-evaporated perovskite light-emitting diodes (PeLEDs) still lags behind those counterparts fabricated by solution methods. Herein, based on vacuum evaporation, 3D perovskite films are obtained by three-source co-evaporation. Considering the unique quantum well structure of quasi-2D perovskite can significantly enhance the exciton binding energy and improve the radiative recombination rate, leading to a high photoluminescence quantum yield (PLQY). Subsequently, the highly stable and low-defect-density quasi-2D perovskite is introduced into 3D perovskite films through post-treatment with phenethylammonium chloride (PEACl). To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. Finally, under the synergistic post-processing modification of PEACl and GABr, blue PeLEDs with a maximum external quantum efficiency (EQE) of 6.09% and a maximum brightness of 1325 cd/m2 are successfully obtained. This work deepens the understanding of 2D/3D heterojunctions and provides a new approach to construct PeLEDs with high performance.
{"title":"Improved vacuum-evaporated blue perovskite light-emitting diodes with phenethylammonium chloride and guanidinium bromide synergistic post-processing modification.","authors":"Liang Sun, Xiping He, Zhiyuan He, Feihu Zhang, Chencheng Peng, Ben Chen, Runda Guo, Lei Wang","doi":"10.1007/s12200-025-00152-8","DOIUrl":"10.1007/s12200-025-00152-8","url":null,"abstract":"<p><p>Metal halide perovskites have become one of the most competitive new-generation optoelectronic materials due to their excellent optoelectronic properties. Vacuum evaporation can produce high-purity and large-area films, leading to the wide application of this method in the semiconductor industry and optoelectronics field. However, the electroluminescent performance of vacuum-evaporated perovskite light-emitting diodes (PeLEDs) still lags behind those counterparts fabricated by solution methods. Herein, based on vacuum evaporation, 3D perovskite films are obtained by three-source co-evaporation. Considering the unique quantum well structure of quasi-2D perovskite can significantly enhance the exciton binding energy and improve the radiative recombination rate, leading to a high photoluminescence quantum yield (PLQY). Subsequently, the highly stable and low-defect-density quasi-2D perovskite is introduced into 3D perovskite films through post-treatment with phenethylammonium chloride (PEACl). To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. Finally, under the synergistic post-processing modification of PEACl and GABr, blue PeLEDs with a maximum external quantum efficiency (EQE) of 6.09% and a maximum brightness of 1325 cd/m<sup>2</sup> are successfully obtained. This work deepens the understanding of 2D/3D heterojunctions and provides a new approach to construct PeLEDs with high performance.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"5"},"PeriodicalIF":4.1,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11930901/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143691981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}