Frontiers of Optoelectronics最新文献

In this paper, we propose a deformed Reuleaux-triangle resonator (RTR) to form exceptional point (EP) which results in the detection sensitivity enhancement of nanoparticle. After introducing single nanoparticle to the deformed RTR at EP, frequency splitting obtains an enhancement of more than 6 times compared with non-deformed RTR. In addition, EP induced a result that the far field pattern of chiral mode responses significantly to external perturbation, corresponding to the change in internal chirality. Therefore, single nanoparticle with far distance of more than 4000 nm can be detected by measuring the variation of far field directional emission. Compared to traditional frequency splitting, the far field pattern produced in deformed RTR provides a cost-effective and convenient path to detect single nanoparticle at a long distance, without using tunable laser and external coupler. Our structure indicates great potential in high sensitivity sensor and label-free detector.

On-chip optical power monitors are indispensable for functional implementation and stabilization of large-scale and complex photonic integrated circuits (PICs). Traditional on-chip optical monitoring is implemented by tapping a small portion of optical power from the waveguide, which leads to significant loss. Due to its advantages like non-invasive nature, miniaturization, and complementary metal-oxide-semiconductor (CMOS) process compatibility, a transparent monitor named the contactless integrated photonic probe (CLIPP), has been attracting great attention in recent years. The CLIPP indirectly monitors the optical power in the waveguide by detecting the conductance variation of the local optical waveguide caused by the surface state absorption (SSA) effect. In this review, we first introduce the fundamentals of the CLIPP including the concept, the equivalent electric model and the impedance read-out method, and then summarize some characteristics of the CLIPP. Finally, the functional applications of the CLIPP on the identification and feedback control of optical signal are discussed, followed by a brief outlook on the prospects of the CLIPP.

Cost-effective soft imprint lithography technique is used to prepare flexible thin polymeric surfaces containing a periodic arrangement of nanodimples and nanobumps of sub-micron size. Using a single master mold of self-assembled colloidal crystal, metasurfaces with different depths and heights of patterns with a fixed pitch are possible, which makes the process inexpensive and simple. These metasurfaces are studied for their diffuse and total transmission and reflection spectra in the visible range. The transmission haze and reflection haze are calculated from the measurements. The surface containing nanobumps of lesser pattern height result in higher values of reflection and transmission haze than from surfaces containing nanodimples of much higher depth for the same pitch. The haze is more dependent on the pattern depth or height and less dependent on the pitch of the pattern. Far-field transmission profiles measured in the same wavelength range from the patterned surfaces show that the scattering increases with the increase of the ratio of pattern depth/height to pitch, similar to the haze measurements conducted with a closed integrating sphere. These profiles show that the angular spread of scattered light in transmission is within 10°, explaining the reason for the relatively low transmission haze in all the patterned surfaces. Simulation results confirm that the nanobump pattern gives higher transmission haze compared to nanodimple pattern. By controlling the ratio of pattern depth/height to pitch of the features on these surfaces, both an increase in optical haze and a balance between total reflection intensity and total transmission intensity can be achieved.

The inadequate stability of organic-inorganic hybrid perovskites remains a significant barrier to their widespread commercial application in optoelectronic devices. Aging phenomena profoundly affect the optoelectronic performance of perovskite-based devices. In addition to enhancing perovskite stability, the real-time detection of aging status, aimed at monitoring the aging progression, holds paramount importance for both fundamental research and the commercialization of organic-inorganic hybrid perovskites. In this study, the aging status of perovskite was real-time investigated by using terahertz time-domain spectroscopy. Our analysis consistently revealed a gradual decline in the intensity of the absorption peak at 0.968 THz with increasing perovskite aging. Furthermore, a systematic discussion was conducted on the variations in intensity and position of the terahertz absorption peaks as the perovskite aged. These findings facilitate the real-time assessment of perovskite aging, providing a promising method to expedite the commercialization of perovskite-based optoelectronic devices.

This study presents a high-accuracy, all-fiber mode division multiplexing (MDM) reconstructive spectrometer (RS). The MDM was achieved by utilizing a custom-designed 3 × 1 mode-selective photonics lantern to launch distinct spatial modes into the multimode fiber (MMF). This facilitated the information transmission by increasing light scattering processes, thereby encoding the optical spectra more comprehensively into speckle patterns. Spectral resolution of 2 pm and the recovery of 2000 spectral channels were accomplished. Compared to methods employing single-mode excitation and two-mode excitation, the three-mode excitation method reduced the recovered error by 88% and 50% respectively. A resolution enhancement approach based on alternating mode modulation was proposed, reaching the MMF limit for the 3 dB bandwidth of the spectral correlation function. The proof-of-concept study can be further extended to encompass diverse programmable mode excitations. It is not only succinct and highly efficient but also well-suited for a variety of high-accuracy, high-resolution spectral measurement scenarios.

In the field of information processing, all-optical routers are significant for achieving high-speed, high-capacity signal processing and transmission. In this study, we developed three types of structurally simple and flexible routers using the deep diffractive neural network (D²NN), capable of routing incident light based on wavelength and polarization. First, we implemented a polarization router for routing two orthogonally polarized light beams. The second type is the wavelength router that can route light with wavelengths of 1550, 1300, and 1100 nm, demonstrating outstanding performance with insertion loss as low as 0.013 dB and an extinction ratio of up to 18.96 dB, while also maintaining excellent polarization preservation. The final router is the polarization-wavelength composite router, capable of routing six types of input light formed by pairwise combinations of three wavelengths (1550, 1300, and 1100 nm) and two orthogonal linearly polarized lights, thereby enhancing the information processing capability of the device. These devices feature compact structures, maintaining high contrast while exhibiting low loss and passive characteristics, making them suitable for integration into future optical components. This study introduces new avenues and methodologies to enhance performance and broaden the applications of future optical information processing systems.

Novel poly(dimethylsiloxane) (PDMS) doped with two different spiropyran derivatives (SP) were investigated as potential candidates for the preparation of elastomeric waveguides with UV-dependent optical properties. First, free-standing films were prepared and evaluated with respect to their photochromic response to UV irradiation. Kinetics, reversibility as well as photofatigue and refractive index of the SP-doped PDMS samples were assessed. Second, SP-doped PDMS waveguides were fabricated and tested as UV sensors by monitoring changes in the transmitted optical power of a visible laser (633 nm). UV sensing was successfully demonstrated by doping PDMS using one spiropyran derivative whose propagation loss was measured as 1.04 dB/cm at 633 nm, and sensitivity estimated at 115% change in transmitted optical power per unit change in UV dose. The decay and recovery time constants were measured at 42 and 107 s, respectively, with an average UV saturation dose of 0.4 J/cm². The prepared waveguides exhibited a reversible and consistent response even under bending. The sensor parameters can be tailored by varying the waveguide length up to 21 cm, and are affected by white light and temperatures up to 70 ℃. This work is relevant to elastomeric optics, smart optical materials, and polymer optical waveguide sensors.

In this paper, we first present an experimental demonstration of terahertz radiation pulse generation with energy up to 5 pJ under the electron emission during ultrafast optical discharge of a vacuum photodiode. We use a femtosecond optical excitation of metallic copper photocathode for the generation of ultrashort electron bunch and up to 45 kV/cm external electric field for the photo-emitted electron acceleration. Measurements of terahertz pulses energy as a function of emitted charge density, incidence angle of optical radiation and applied electric field have been provided. Spectral and polarization characteristics of generated terahertz pulses have also been studied. The proposed semi-analytical model and simulations in COMSOL Multiphysics prove the experimental data and allow for the optimization of experimental conditions aimed at flexible control of radiation parameters.

In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications, including 6G wireless communications, quantum information, bioimaging and security. However, the overall performance of these photodetectors may be utterly compromised by the impact of internal resistances presented in the device, so-called access or parasitic resistances. In this work, we provide a detailed study of the influence of internal device resistances in the photoresponse of high-mobility dual-gate GFET detectors. Such dual-gate architectures allow us to fine tune (decrease) the internal resistance of the device by an order of magnitude and consequently demonstrate an improved responsivity and noise-equivalent-power values of the photodetector, respectively. Our results can be well understood by a series resistance model, as shown by the excellent agreement found between the experimental data and theoretical calculations. These findings are therefore relevant to understand and improve the overall performance of existing high-mobility graphene photodetectors.

The multiple absorber layer perovskite solar cells (PSCs) with charge transport layers-free (CTLs-free) have drawn widespread research interest due to their simplified architecture and promising photoelectric characteristics. Under the circumstances, the novel design of CTLs-free inversion PSCs with stable and nontoxic three absorber layers (triple Cs₃Bi₂I₉, single MASnI₃, double Cs₂TiBr₆) as optical-harvester has been numerically simulated by utilizing wxAMPS simulation software and achieved high power conversion efficiency (PCE) of 14.8834%. This is owing to the innovative architecture of PSCs favors efficient transport and extraction of more holes and the slender band gap MASnI₃ extends the absorption spectrum to the near-infrared periphery compared with the two absorber layers architecture of PSCs. Moreover, the performance of the device with p-type-Cs₃Bi₂I₉/p-type-MASnI₃/n-type-Cs₂TiBr₆ architecture is superior to the one with the p-type-Cs₃Bi₂I₉/n-type-MASnI₃/n-type-Cs₂TiBr₆ architecture due to less carrier recombination and higher carrier life time inside the absorber layers. The simulation results reveal that Cs₂TiF₆ double perovskite material stands out as the best alternative. Additionally, an excellent PCE of 21.4530% can be obtained with the thicker MASnI₃ absorber layer thickness (0.4 µm). Lastly, the highest-performance photovoltaic devices (28.6193%) can be created with the optimized perovskite doping density of around E15 cm³ (Cs₃Bi₂I₉), E18 cm³ (MASnI₃), and 1.5E19 cm³ (Cs₂TiBr₆). This work manifests that the proposed CTLs-free PSCs with multi-absorber layers shall be a relevant reference for forward applications in electro-optical and optoelectronic devices.