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Recent advances in monolithic-integrated lead-based optoelectronic devices. 单片集成铅基光电器件的最新进展。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-06-11 DOI: 10.1007/s12200-025-00158-2
Shaoheng Xu, Jiajun Luo, Haisheng Song, Jiang Tang

Optoelectronic devices, including light sensors and light-emitting diodes, are indispensable for our daily lives. Lead-based optoelectronic materials, including colloidal quantum dots and lead-halide perovskites, have emerged as promising candidates for the next-generation optoelectronic devices. This is primarily attributed to their tailorable optoelectronic properties, industrialization-compatible manufacturing techniques, seamless integration with silicon technology and excellent device performance. In this perspective, we review recent advancements in lead-based optoelectronic devices, specifically focusing on photodetectors and active displays. By discussing the current challenges and limitations of lead-based optoelectronics, we find the exciting potential of on-chip, in-situ fabrication methods for realizing high-performance optoelectronic systems.

光电子器件,包括光传感器和发光二极管,是我们日常生活中不可或缺的。铅基光电材料,包括胶体量子点和卤化铅钙钛矿,已经成为下一代光电器件的有希望的候选者。这主要归功于其可定制的光电特性,工业化兼容的制造技术,与硅技术的无缝集成以及出色的器件性能。从这个角度来看,我们回顾了铅基光电器件的最新进展,特别是光电探测器和有源显示器。通过讨论目前铅基光电子学的挑战和局限性,我们发现了实现高性能光电子系统的片上原位制造方法的令人兴奋的潜力。
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引用次数: 0
Nonlinear saturable absorption properties of BP/ReS2 heterojunction and its application in 2 μm all-solid-state lasers. BP/ReS2异质结非线性饱和吸收特性及其在2 μm全固态激光器中的应用
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-06-11 DOI: 10.1007/s12200-025-00157-3
Hongqing Li, Wenjing Tang, Yingshuang Shan, Jing Wang, Kai Jiang, Mingqi Fan, Tao Chen, Cheng Zhou, Wei Xia

For 2 μm all-solid-state lasers, pulse modulation methods based on low-dimensional nanomaterial saturable absorbers (SAs) offer advantages such as compact structure, low cost, and ease of implementation. The construction of stable, highly nonlinear low-dimensional nanomaterial SAs is an urgent issue to be addressed. In this paper, two types of black phosphorus/rhenium disulfide (BP/ReS2) heterojunction with high stability were prepared separately by liquid phase exfoliation (LPE) and mechanical exfoliation (ME) methods, the nonlinear saturable absorption characteristics of the two types of heterojunctions have been characterized in detail. Then, the pulse modulation applications of these two materials have been studied in a 2 μm all-solid-state thulium-doped yttrium aluminum perovskite (Tm:YAP) passively Q-switched pulsed laser. The BP/ReS2 heterojunction SA prepared by the LPE method demonstrates a thinner thickness and lower non-saturation optical loss, which achieved the maximum average output power 528 mW at a pump power of 6.37 W, with a narrowest pulse width of 366 ns, and a maximum peak power of 28.85 W. These results indicate that the BP/ReS2 heterojunction SA has great potential for optical modulation device applications.

对于2 μm全固态激光器,基于低维纳米材料饱和吸收剂(SAs)的脉冲调制方法具有结构紧凑、成本低、易于实现等优点。构建稳定的、高度非线性的低维纳米材料是一个亟待解决的问题。采用液相剥脱法(LPE)和机械剥脱法(ME)分别制备了两种高稳定性的黑磷/二硫化铼(BP/ReS2)异质结,并对两种异质结的非线性饱和吸收特性进行了详细表征。然后,研究了这两种材料在2 μm全固态掺铥钇铝钙钛矿(Tm:YAP)被动调q脉冲激光器中的脉冲调制应用。LPE法制备的BP/ReS2异质结SA具有较薄的厚度和较低的非饱和光损耗,在6.37 W的泵浦功率下实现了最大平均输出功率528 mW,最窄脉冲宽度为366 ns,最大峰值功率为28.85 W。这些结果表明,BP/ReS2异质结SA在光调制器件中具有很大的应用潜力。
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引用次数: 0
Effect of energy back transfer from Er3+ to Yb3+ ions on the upconversion luminescence of Er:NaYb(MoO4)2 and Yb,Er:NaBi(MoO4)2. Er3+离子向Yb3+离子的能量反转移对Er:NaYb(MoO4)2和Yb,Er:NaBi(MoO4)2上转换发光的影响
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-05-15 DOI: 10.1007/s12200-025-00155-5
Miaomiao Wang, Mengyu Zhang, Shoujun Ding, Haitang Hu, Chuancheng Zhang, Yong Zou

Under the excitation of a 980 nm laser, the visible upconversion (UC) luminescence of Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as well as the Yb3+/Er3+ ions codoped NaBi(MoO4)2 crystal were investigated comprehensively. The results indicate that all three samples exhibit two significant green emission bands and a weak red emission band in the visible band corresponding to the transitions of 2H11/2/4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 of Er3+ ions, respectively. Through the variable power density spectra of three different samples, the relationship between the energy back transfer (EBT) process of Yb3+-Er3+ ions and the power density point and Yb3+ ion concentration was investigated. The EBT process was observed in both the Er3+ ions doped Yb3+ ions self-activated NaYb(MoO4)2 phosphor and crystal, as confirmed by the luminescence image of the sample. At high power density, the Yb3+ ions self-activated sample exhibited yellow luminescence, with the crystal appearing later than the phosphor. In contrast, the NaBi(MoO4)2 crystal displayed bright green emission within the measured power density range. In addition, by monitoring the relative intensity change of Yb3+ emission in 5 at% Er3+:NaYb(MoO4)2 crystal, the generation of EBT process in self-activated samples at high power density is more directly explained. These experimental results provide a reliable basis for our comprehensive understanding of the EBT mechanism, and also provide a reliable direction for the final determination of the optimal excitation power density for optical temperature measurement.

在980 nm激光激发下,对Er3+离子掺杂Yb3+离子自激活的NaYb(MoO4)2荧光粉和晶体,以及Yb3+/Er3+离子共掺杂NaBi(MoO4)2晶体的可见光上转换(UC)发光进行了全面研究。结果表明:在Er3+离子的2H11/2/4S3/2→4I15/2和4F9/2→4I15/2跃迁过程中,三种样品在可见光波段均呈现出明显的绿色发射带和微弱的红色发射带。通过三种不同样品的变功率密度谱,研究了Yb3+-Er3+离子的能量反转移过程与功率密度点和Yb3+离子浓度的关系。在Er3+离子掺杂Yb3+离子自激活的NaYb(MoO4)2荧光粉和晶体中均观察到EBT过程,样品的发光图像证实了这一过程。在高功率密度下,Yb3+离子自激活样品呈现黄色发光,晶体出现时间晚于荧光粉。相比之下,NaBi(MoO4)2晶体在测量的功率密度范围内显示出明亮的绿色发射。此外,通过监测5中Yb3+在% Er3+:NaYb(MoO4)2晶体下的发射相对强度变化,更直接地解释了高功率密度下自激活样品中EBT过程的产生。这些实验结果为我们全面了解EBT机理提供了可靠的基础,也为最终确定光学测温的最佳激发功率密度提供了可靠的方向。
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引用次数: 0
Simulation and experimental investigation of liquid-cooling thermal management for high-bandwidth co-packaged optics. 高带宽共封装光学器件液冷热管理的仿真与实验研究。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-05-14 DOI: 10.1007/s12200-025-00156-4
Senhan Wu, Song Wen, Huimin He, Jianyu Feng, Chuan Chen, Haiyun Xue

This study explores the application of cold plate liquid cooling technology in co-packaged optics (CPO). By integrating optical modules and the switch chip on the same substrate, CPO shortens the electrical interconnection distance, effectively solving the problems of high power consumption and poor signal integrity of traditional pluggable optical modules under high bandwidth. However, the surge in power density and the thermal crosstalk resulting from high integration density make thermal management one of the key challenges that constrain the reliability of high-capacity co-packaged optics. For the unique architecture of CPO, this study analyzes its heat dissipation needs in detail, and a thermal management scheme is designed. The thermal management scheme is simulated and optimized based on the Navier-Stokes equation. The simulation results show that, in a 51.2 Tbit/s CPO system, the junction temperature of the switch chip is 97.3 °C, the maximum junction temperature of the optical modules is 31.3 °C, and the temperature difference between the optical modules is 2.4 °C to 1.2 °C. To verify the simulation results, a thermal test experimental platform is built, and the experimental results show that the temperature simulation difference is within 4% and the pressure change trend is consistent with the simulation. Combining the experimental data and simulation results, the designed heat sink can satisfy the heat dissipation demands of the 51.2 Tbit/s bandwidth CPO system. This conclusion demonstrates the potential of liquid-cooling technology in CPO, providing support for research on liquid-cooling technology in the CPO. The design provides a theoretical and practical basis for the high performance and reliability of optoelectronic integration technology in wavelength division multiplexing (WDM) systems and micro-ring device applications, contributing to the application of next-generation optical communication networks.

研究了冷板液冷技术在共封装光学器件(CPO)中的应用。通过将光模块和开关芯片集成在同一基片上,CPO缩短了电互连距离,有效解决了传统可插拔光模块在高带宽下功耗高、信号完整性差的问题。然而,功率密度的激增和高集成密度导致的热串扰使得热管理成为限制高容量共封装光学器件可靠性的关键挑战之一。针对CPO独特的建筑结构,本文详细分析了其散热需求,并设计了热管理方案。基于Navier-Stokes方程对热管理方案进行了仿真和优化。仿真结果表明,在51.2 Tbit/s的CPO系统中,开关芯片的结温为97.3℃,光模块的最高结温为31.3℃,光模块之间的温差为2.4℃~ 1.2℃。为了验证仿真结果,搭建了热测试实验平台,实验结果表明,温度模拟差值在4%以内,压力变化趋势与仿真结果一致。结合实验数据和仿真结果,所设计的散热片能够满足带宽为51.2 Tbit/s的CPO系统的散热需求。这一结论显示了液冷技术在聚烯烃中的潜力,为聚烯烃液冷技术的研究提供了支持。该设计为光电子集成技术在波分复用(WDM)系统和微环器件应用中的高性能和可靠性提供了理论和实践基础,有助于下一代光通信网络的应用。
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引用次数: 0
Progress in silicon-based reconfigurable and programmable all-optical signal processing chips. 硅基可重构可编程全光信号处理芯片的研究进展。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-05-12 DOI: 10.1007/s12200-025-00154-6
Jing Xu, Wenchan Dong, Qingzhong Huang, Yujia Zhang, Yuchen Yin, Zhenyu Zhao, Desheng Zeng, Xiaoyan Gao, Wentao Gu, Zihao Yang, Hanghang Li, Xinjie Han, Yong Geng, Kunpeng Zhai, Bei Chen, Xin Fu, Lei Lei, Xiaojun Wu, Jianji Dong, Yikai Su, Ming Li, Jianguo Liu, Ninghua Zhu, Xuhan Guo, Heng Zhou, Huashun Wen, Kun Qiu, Xinliang Zhang
<p><p>Taking the advantage of ultrafast optical linear and nonlinear effects, all-optical signal processing (AOSP) enables manipulation, regeneration, and computing of information directly in optical domain without resorting to electronics. As a promising photonic integration platform, silicon-on-insulator (SOI) has the advantage of complementary metal oxide semiconductor (CMOS) compatibility, low-loss, compact size as well as large optical nonlinearities. In this paper, we review the recent progress in the project granted to develop silicon-based reconfigurable AOSP chips, which aims to combine the merits of AOSP and silicon photonics to solve the unsustainable cost and energy challenges in future communication and big data applications. Three key challenges are identified in this project: (1) how to finely manipulate and reconfigure optical fields, (2) how to achieve ultra-low loss integrated silicon waveguides and significant enhancement of nonlinear effects, (3) how to mitigate crosstalk between optical, electrical and thermal components. By focusing on these key issues, the following major achievements are realized during the project. First, ultra-low loss silicon-based waveguides as well as ultra-high quality microresonators are developed by advancing key fabrication technologies as well as device structures. Integrated photonic filters with bandwidth and free spectral range reconfigurable in a wide range were realized to finely manipulate and select input light fields with a high degree of freedom. Second, several mechanisms and new designs that aim at nonlinear enhancement have been proposed, including optical ridge waveguides with reverse biased PIN junction, slot waveguides, multimode waveguides and parity-time symmetry coupled microresonators. Advanced AOSP operations are verified with these novel designs. Logical computations at 100 Gbit/s were demonstrated with self-developed, monolithic integrated programmable optical logic array. High-dimensional multi-value logic operations based on the four-wave mixing effect are realized. Multi-channel all-optical amplitude and phase regeneration technology is developed, and a multi-channel, multi-format, reconfigurable all-optical regeneration chip is realized. Expanding regeneration capacity via spatial dimension is also verified. Third, the crosstalk from optical as well as thermal coupling due to high-density integration are mitigated by developing novel optical designs and advanced packaging technologies, enabling high-density, small size, multi-channel and multi-functional operation with low power consumption. Finally, four programmable AOSP chips are developed, i.e., programmable photonic filter chip, programmable photonic logic operation chip, multi-dimensional all-optical regeneration chip, and multi-channel and multi-functional AOSP chip with packaging. The major achievements developed in this project pave the way toward ultra-low loss, high-speed, high-efficient, high-density informat
利用超快的光学线性和非线性效应,全光信号处理(AOSP)可以直接在光域中处理、再生和计算信息,而无需借助电子技术。绝缘体上硅(SOI)具有与互补金属氧化物半导体(CMOS)兼容、低损耗、体积小、光学非线性大等优点,是一种很有前途的光子集成平台。本文综述了硅基可重构AOSP芯片项目的最新进展,该项目旨在将AOSP与硅光子学的优点结合起来,解决未来通信和大数据应用中不可持续的成本和能源挑战。本项目确定了三个关键挑战:(1)如何精细地操纵和重新配置光场;(2)如何实现超低损耗集成硅波导和显著增强非线性效应;(3)如何减轻光学、电气和热元件之间的串扰。通过关注这些关键问题,在项目期间取得了以下主要成果:首先,通过推进关键制造技术和器件结构,开发超低损耗硅基波导和超高质量微谐振器。实现了带宽和自由光谱范围在大范围内可重构的集成光子滤波器,实现了对输入光场的高精度操纵和选择。其次,提出了几种针对非线性增强的机制和新设计,包括带反向偏置PIN结的光脊波导、槽波导、多模波导和奇偶时间对称耦合微谐振器。这些新颖的设计验证了先进的AOSP操作。利用自主开发的单片集成可编程光逻辑阵列,演示了100 Gbit/s的逻辑计算。实现了基于四波混频效应的高维多值逻辑运算。开发了多通道全光振幅和相位再生技术,实现了多通道、多格式、可重构的全光再生芯片。通过空间维度扩展再生能力也得到了验证。第三,通过开发新颖的光学设计和先进的封装技术,可以减轻由于高密度集成而产生的光串扰和热耦合,从而实现高密度、小尺寸、多通道和多功能的低功耗操作。最后,开发了四种可编程AOSP芯片,即可编程光子滤波芯片、可编程光子逻辑运算芯片、多维全光再生芯片和多通道多功能封装AOSP芯片。本项目的主要成果为今后经典和非经典通信与计算应用的超低损耗、高速、高效、高密度信息处理铺平了道路。
{"title":"Progress in silicon-based reconfigurable and programmable all-optical signal processing chips.","authors":"Jing Xu, Wenchan Dong, Qingzhong Huang, Yujia Zhang, Yuchen Yin, Zhenyu Zhao, Desheng Zeng, Xiaoyan Gao, Wentao Gu, Zihao Yang, Hanghang Li, Xinjie Han, Yong Geng, Kunpeng Zhai, Bei Chen, Xin Fu, Lei Lei, Xiaojun Wu, Jianji Dong, Yikai Su, Ming Li, Jianguo Liu, Ninghua Zhu, Xuhan Guo, Heng Zhou, Huashun Wen, Kun Qiu, Xinliang Zhang","doi":"10.1007/s12200-025-00154-6","DOIUrl":"10.1007/s12200-025-00154-6","url":null,"abstract":"&lt;p&gt;&lt;p&gt;Taking the advantage of ultrafast optical linear and nonlinear effects, all-optical signal processing (AOSP) enables manipulation, regeneration, and computing of information directly in optical domain without resorting to electronics. As a promising photonic integration platform, silicon-on-insulator (SOI) has the advantage of complementary metal oxide semiconductor (CMOS) compatibility, low-loss, compact size as well as large optical nonlinearities. In this paper, we review the recent progress in the project granted to develop silicon-based reconfigurable AOSP chips, which aims to combine the merits of AOSP and silicon photonics to solve the unsustainable cost and energy challenges in future communication and big data applications. Three key challenges are identified in this project: (1) how to finely manipulate and reconfigure optical fields, (2) how to achieve ultra-low loss integrated silicon waveguides and significant enhancement of nonlinear effects, (3) how to mitigate crosstalk between optical, electrical and thermal components. By focusing on these key issues, the following major achievements are realized during the project. First, ultra-low loss silicon-based waveguides as well as ultra-high quality microresonators are developed by advancing key fabrication technologies as well as device structures. Integrated photonic filters with bandwidth and free spectral range reconfigurable in a wide range were realized to finely manipulate and select input light fields with a high degree of freedom. Second, several mechanisms and new designs that aim at nonlinear enhancement have been proposed, including optical ridge waveguides with reverse biased PIN junction, slot waveguides, multimode waveguides and parity-time symmetry coupled microresonators. Advanced AOSP operations are verified with these novel designs. Logical computations at 100 Gbit/s were demonstrated with self-developed, monolithic integrated programmable optical logic array. High-dimensional multi-value logic operations based on the four-wave mixing effect are realized. Multi-channel all-optical amplitude and phase regeneration technology is developed, and a multi-channel, multi-format, reconfigurable all-optical regeneration chip is realized. Expanding regeneration capacity via spatial dimension is also verified. Third, the crosstalk from optical as well as thermal coupling due to high-density integration are mitigated by developing novel optical designs and advanced packaging technologies, enabling high-density, small size, multi-channel and multi-functional operation with low power consumption. Finally, four programmable AOSP chips are developed, i.e., programmable photonic filter chip, programmable photonic logic operation chip, multi-dimensional all-optical regeneration chip, and multi-channel and multi-functional AOSP chip with packaging. The major achievements developed in this project pave the way toward ultra-low loss, high-speed, high-efficient, high-density informat","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"18 1","pages":"10"},"PeriodicalIF":4.1,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12069217/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143965220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation study of reducing reflection losses in all-perovskite tandem solar cells through dual serrated structure. 双锯齿结构降低全钙钛矿串联太阳能电池反射损耗的模拟研究。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-22 DOI: 10.1007/s12200-025-00153-7
Wenjiang Ye, Aoyue Chen, Ping Fu, Jiang Tang, Chao Chen

The power conversion efficiency of all-perovskite tandem solar cells is predominantly constrained by optical absorption losses, especially reflection losses. In this simulation study, we propose the optimization of a dual-interface serrated microstructure to mitigate these optical reflection losses in all-perovskite tandem solar cells. By adjusting the geometry of the periodic serrated structures at both the front interface and the back electrode, we enhance light absorption in the wide-bandgap perovskite layer and promote light scattering in the narrow-bandgap perovskite layer. The structural modification reduces the reflection-induced photocurrent density loss from 4.47 to 3.65 mA cm-2. It is expected to boost the efficiency of all-perovskite tandem solar cells to approximately 31.13%, representing a 3.41% increase. The dual-interface optimization effectively suppresses reflection losses and improves the overall photocurrent of all-perovskite tandem solar cells. These results offer a promising strategy for minimizing optical losses and enhancing device performance in all-perovskite tandem solar cells.

全钙钛矿串联太阳能电池的功率转换效率主要受光吸收损耗,特别是反射损耗的制约。在这项模拟研究中,我们提出优化双界面锯齿状微观结构,以减轻全钙钛矿串联太阳能电池中的这些光学反射损失。通过调整前后电极界面的周期性锯齿结构的几何形状,增强了宽禁带钙钛矿层的光吸收,促进了窄禁带钙钛矿层的光散射。结构的改变将反射引起的光电流密度损失从4.47 mA cm-2降低到3.65 mA cm-2。预计将把全钙钛矿串联太阳能电池的效率提高到约31.13%,代表3.41%的增长。双界面优化有效地抑制了反射损耗,提高了全钙钛矿串联太阳能电池的整体光电流。这些结果为最小化光损耗和提高全钙钛矿串联太阳能电池的器件性能提供了一个有前途的策略。
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引用次数: 0
Silica nanoparticles assisted Ba2SiO4:Eu2+-a bluish-green emitting remote phosphor for white light application. 二氧化硅纳米颗粒辅助Ba2SiO4:Eu2+-一种用于白光应用的蓝绿色发射远端荧光粉。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-09 DOI: 10.1007/s12200-025-00150-w
Abinaya Mayavan, Aarthi Kannan, Sakthivel Gandhi

Silica nanoparticles were used to develop a bluish-green emitting Ba2SiO4:Eu2+ phosphor, demonstrating their potential for white light applications. The phosphor showed a 48% enhancement of emission intensity compared to conventional silica-assisted phosphors. The use of silica nanoparticles as a precursor could lead to the creation of a more homogeneous distribution of cations and dopant ions. This uniform distribution could facilitate the proper infusion of dopants into the crystal host, resulting in improved emission. The phosphor exhibited high thermal stability, with 56% of its luminescence intensity maintained even at 190 °C compared to room temperature. To reduce thermal stress, a flexible remote phosphor has been developed successfully using optimized silica nanoparticles assisted Ba2SiO4:Eu2+ phosphor.

二氧化硅纳米颗粒被用于开发蓝绿色发光的Ba2SiO4:Eu2+荧光粉,展示了它们在白光应用中的潜力。与传统的二氧化硅辅助荧光粉相比,该荧光粉的发射强度增强了48%。使用二氧化硅纳米颗粒作为前驱体可以产生更均匀分布的阳离子和掺杂离子。这种均匀分布有利于将掺杂剂适当地注入晶体主体,从而提高发射效率。该荧光粉具有较高的热稳定性,与室温相比,即使在190℃下,其发光强度仍保持56%。为了减少热应力,利用优化的二氧化硅纳米颗粒辅助Ba2SiO4:Eu2+荧光粉,成功地开发了一种柔性远端荧光粉。
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引用次数: 0
Temperature stabilization with Hebbian learning using an autonomous optoelectronic dendritic unit. 利用自主光电树突状单元的Hebbian学习实现温度稳定。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-04-03 DOI: 10.1007/s12200-025-00151-9
Silvia Ortín, Moritz Pflüger, Apostolos Argyris

The integration of machine learning with photonic and optoelectronic components is progressing rapidly, offering the potential for high-speed bio-inspired computing platforms. In this work, we employ an experimental fiber-based dendritic structure with adaptive plasticity for a learning-and-control virtual task. Specifically, we develop a closed-loop controller embedded in a single-mode fiber optical dendritic unit (ODU) that incorporates Hebbian learning principles, and we test it in a hypothetical temperature stabilization task. Our optoelectronic system operates at 1 GHz signaling and sampling rates and applies plasticity rules through the direct modulation of semiconductor optical amplifiers. Although the input correlation (ICO) learning rule we consider here is computed digitally from the experimental output of the optoelectronic system, this output is fed back into the plastic properties of the ODU physical substrate, enabling autonomous learning. In this specific configuration, we utilize only three plastic dendritic optical branches with exclusively positive weighting. We demonstrate that, despite variations in the physical system's parameters, the application of the ICO learning rule effectively mitigates temperature disturbances, ensuring robust performance. These results encourage an all-hardware solution, where optimizing feedback loop speed and embedding the ICO rule will enable continuous stabilization, finalizing a real-time platform operating at up to 1 GHz.

机器学习与光子和光电子元件的集成正在迅速发展,为高速生物计算平台提供了潜力。在这项工作中,我们采用了一种具有自适应可塑性的实验性纤维树突结构来完成学习和控制的虚拟任务。具体来说,我们开发了一个嵌入单模光纤树突状单元(ODU)的闭环控制器,该控制器结合了Hebbian学习原理,并在假设的温度稳定任务中进行了测试。我们的光电系统工作在1ghz的信号和采样率,并通过半导体光放大器的直接调制应用塑性规则。虽然我们在这里考虑的输入相关(ICO)学习规则是从光电系统的实验输出中以数字方式计算的,但该输出被反馈到ODU物理衬底的塑性特性中,从而实现自主学习。在这个特定的配置中,我们只使用三个塑料树枝状光学分支,它们的权重都是正的。我们证明,尽管物理系统的参数发生变化,ICO学习规则的应用有效地减轻了温度干扰,确保了鲁棒性。这些结果鼓励采用全硬件解决方案,其中优化反馈环路速度和嵌入ICO规则将实现持续稳定,最终实现高达1ghz的实时平台。
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引用次数: 0
Age as a limiting factor for effectiveness of photostimulation of brain drainage and cognitive functions. 年龄是光刺激脑引流和认知功能效果的限制因素。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-31 DOI: 10.1007/s12200-025-00149-3
Terskov Andrey, Shirokov Alexander, Blokhina Inna, Zlatogorskaya Daria, Adushkina Viktoria, Semiachkina-Glushkovskaia Anastasiia, Atul Kumar, Fedosov Ivan, Evsukova Arina, Semyachkina-Glushkovskaya Oxana

The progressive number of old adults with cognitive impairment worldwide and the lack of effective pharmacologic therapies require the development of non-pharmacologic strategies. The photobiomodulation (PBM) is a promising method in prevention of early or mild age-related cognitive impairments. However, it remains unclear the efficacy of PBM for old patients with significant age-related cognitive dysfunction. In our study on male mice, we show a gradual increase in the brain amyloid beta (Aβ) levels and a decrease in brain drainage with age, which, however, is associated with a decline in cognitive function only in old (24 months of age) mice but not in middle-aged (12 months of age) and young (3 month of age) animals. These age-related features are accompanied by the development of hyperplasia of the meningeal lymphatic vessels (MLVs) in old mice underlying the decrease in brain drainage. PBM improves cognitive training exercises and Aβ clearance only in young and middle-aged mice, while old animals are not sensitive to PBM. These results clearly demonstrate that the PBM effects on cognitive function are correlated with age-mediated changes in the MLV network and may be effective if the MLV function is preserved. These findings expand fundamental knowledge about age differences in the effectiveness of PBM for improvement of cognitive functions and Aβ clearance as well as about the lymphatic mechanisms responsible for age decline in sensitivity to the therapeutic PBM effects.

随着世界范围内老年认知障碍患者数量的增加和有效药物治疗的缺乏,需要开发非药物治疗策略。光生物调节(PBM)是预防早期或轻度年龄相关认知障碍的一种很有前途的方法。然而,目前尚不清楚PBM对有明显年龄相关认知功能障碍的老年患者的疗效。在我们对雄性小鼠的研究中,我们发现随着年龄的增长,大脑淀粉样蛋白β (a β)水平逐渐增加,脑引流液减少,然而,这只与老年(24个月大)小鼠的认知功能下降有关,而与中年(12个月大)和年轻(3个月大)小鼠的认知功能下降无关。这些与年龄相关的特征伴随着老年小鼠脑膜淋巴管(mlv)增生的发展,这是脑引流减少的基础。PBM仅在中青年小鼠中改善认知训练和Aβ清除,而老年小鼠对PBM不敏感。这些结果清楚地表明,PBM对认知功能的影响与年龄介导的MLV网络变化有关,如果MLV功能保持不变,PBM对认知功能的影响可能是有效的。这些发现扩大了对PBM在改善认知功能和Aβ清除方面的有效性的年龄差异的基本认识,以及对PBM治疗效果敏感性随年龄下降的淋巴机制。
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引用次数: 0
Improved vacuum-evaporated blue perovskite light-emitting diodes with phenethylammonium chloride and guanidinium bromide synergistic post-processing modification. 苯乙基氯化铵和溴化胍协同后处理改性真空蒸发蓝钙钛矿发光二极管。
IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-03-24 DOI: 10.1007/s12200-025-00152-8
Liang Sun, Xiping He, Zhiyuan He, Feihu Zhang, Chencheng Peng, Ben Chen, Runda Guo, Lei Wang

Metal halide perovskites have become one of the most competitive new-generation optoelectronic materials due to their excellent optoelectronic properties. Vacuum evaporation can produce high-purity and large-area films, leading to the wide application of this method in the semiconductor industry and optoelectronics field. However, the electroluminescent performance of vacuum-evaporated perovskite light-emitting diodes (PeLEDs) still lags behind those counterparts fabricated by solution methods. Herein, based on vacuum evaporation, 3D perovskite films are obtained by three-source co-evaporation. Considering the unique quantum well structure of quasi-2D perovskite can significantly enhance the exciton binding energy and improve the radiative recombination rate, leading to a high photoluminescence quantum yield (PLQY). Subsequently, the highly stable and low-defect-density quasi-2D perovskite is introduced into 3D perovskite films through post-treatment with phenethylammonium chloride (PEACl). To minimize the degradation of film quality caused by PEACl treatment, a layer of guanidinium bromide (GABr) is vacuum evaporated on top of PEACl treatment to further improve the quality of emitting layer. Finally, under the synergistic post-processing modification of PEACl and GABr, blue PeLEDs with a maximum external quantum efficiency (EQE) of 6.09% and a maximum brightness of 1325 cd/m2 are successfully obtained. This work deepens the understanding of 2D/3D heterojunctions and provides a new approach to construct PeLEDs with high performance.

金属卤化物钙钛矿以其优异的光电性能成为新一代光电材料中最具竞争力的材料之一。真空蒸发可以生产出高纯度和大面积的薄膜,使得该方法在半导体工业和光电子领域得到广泛应用。然而,真空蒸发钙钛矿发光二极管(PeLEDs)的电致发光性能仍落后于溶液法制备的同类器件。本文在真空蒸发的基础上,通过三源共蒸发获得了三维钙钛矿薄膜。考虑到准二维钙钛矿独特的量子阱结构可以显著增强激子结合能,提高辐射复合率,从而获得较高的光致发光量子产率(PLQY)。随后,通过苯乙基氯化铵(PEACl)后处理,将高稳定性、低缺陷密度的准二维钙钛矿引入三维钙钛矿薄膜中。为了最大限度地降低PEACl处理对膜质量的影响,在PEACl处理上真空蒸发一层溴化胍(GABr),进一步提高发射层的质量。最后,在PEACl和GABr的协同后处理修饰下,成功获得了最大外量子效率(EQE)为6.09%、最大亮度为1325 cd/m2的蓝色pled。这项工作加深了对2D/3D异质结的理解,并为构建高性能的ped提供了一种新的方法。
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Frontiers of Optoelectronics
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