Frontiers of Optoelectronics最新文献

An optical phased array (OPA) is a promising non-mechanical technique for beam steering in solid-state light detection and ranging systems. The performance of the OPA largely depends on the phase shifter, which affects power consumption, insertion loss, modulation speed, and footprint. However, for a thermo-optic phase shifter, achieving good performance in all aspects is challenging due to trade-offs among these aspects. In this work, we propose and demonstrate two types of energy-efficient optical phase shifters that overcome these trade-offs and achieve a well-balanced performance in all aspects. Additionally, the proposed round-spiral phase shifter is robust in fabrication and fully compatible with deep ultraviolet (DUV) processes, making it an ideal building block for large-scale photonic integrated circuits (PICs). Using the high-performance phase shifter, we propose a periodic OPA with low power consumption, whose maximum electric power consumption within the field of view is only 0.33 W. Moreover, we designed Gaussian power distribution in both the azimuthal ([Formula: see text]) and polar ([Formula: see text]) directions and experimentally achieved a large sidelobe suppression ratio of 15.1 and 25 dB, respectively.

With the increase in the aging population, the global number of people with Alzheimer's disease (AD) progressively increased worldwide. The situation is aggravated by the fact that there is no the effective pharmacological therapy of AD. Photobiomodulation (PBM) is non-pharmacological approach that has shown very promising results in the therapy of AD in pilot clinical and animal studies. However, the mechanisms of therapeutic effects of PBM for AD are poorly understood. In this study on mice, we demonstrate that photodynamic effects of 5-aminolevulenic acid and laser 635 nm cause reduction of network of the meningeal lymphatic vessels (MLVs) leading to suppression of lymphatic removal of beta-amyloid (Aβ) from the right lateral ventricle and the hippocampus. Using the original protocol of PBM under electroencephalographic monitoring of wakefulness and sleep stages in non-anesthetized mice, we discover that the 7-day course of PBM during deep sleep vs. wakefulness provides better restoration of clearance of Aβ from the ventricular system of the brain and the hippocampus. Our results shed light on the mechanism of PBM and show the stimulating effects of PBM on the brain lymphatic drainage that promotes transport of Aβ via the lymphatic pathway. The effects of PBM on the brain lymphatics in sleeping brain open a new niche in the study of restorative functions of sleep as well as it is an important informative platform for the development of innovative smart sleep technologies for the therapy of AD.

The results of an optoelectronic system-frequency-shifted feedback (FSF) laser experimental examination are presented. The considered FSF laser is seeded only with optical amplifier spontaneous emission (ASE) and operates in the mode-locked regime, whereby the output radiation is sequence of short pulses with a repetition rate determined by the delay time in its optical feedback circuit. In the frequency domain, the spectrum of such a pulse sequence is an optical frequency comb (OFC). These OFCs we call initial. We consider the possibility of tunable acousto-optic (AO) dual and quad-comb frequency spacing downconversion in the FSF laser seeded with ASE and operating in the mode-locked regime. The examined system applies a single frequency shifting loop with single AO tunable filter as the frequency shifter that is fed with several radio frequency signals simultaneously. The initial OFCs with frequency spacing of about 6.5 MHz may be obtained in the wide spectral range and their width, envelope shape and position in the optical spectrum may be tuned. The dual-combs are obtained with a pair of initial OFCs aroused by two various ultrasound waves in the acousto-optic tunable filter (AOTF). The dual-combs frequency spacing is determined by the frequency difference of the signals applied to the AOTF piezoelectric transducer and can be tuned simply. The quad-combs are obtained with three initial OFCs, forming a pair of dual-combs, appearing when three ultrasound frequencies feed the AOTF transducer. The quad-combs frequency spacing is defined by the difference between the frequency spacing of dual-combs. Quad-combs with more than 5000 spectral lines and tunable frequency spacing are observed. The successive frequency downconversion gives the possibility to reduce the OFC frequency spacing form several MHz for initial OFC to tens of kHz for quad-combs.

Optical beating is the usual approach to generation of microwave signals. However, the highest frequency achievable for microwave signals is limited by the bandwidths of optoelectronic devices. To maximize the microwave frequency with a limited bandwidth of a photodetector (PD) and relieve the bandwidth bottleneck, we propose to generate microwave signals with the single sideband (SSB) format by beating a continuous wave (CW) light with an optical SSB signal. By simply adjusting the frequency difference between the CW light and the carrier of the optical SSB signal, the frequency of the generated microwave SSB signal is changed correspondingly. In the experiment, amplitude shift keying (ASK) microwave signals with the SSB format are successfully generated with different carrier frequencies and coding bit rates, and the recovered coding information agrees well with the original pseudo random binary sequence (PRBS) of 2⁷ - 1 bits. The proposed approach can significantly relieve the bandwidth restriction set by optoelectronic devices in high-speed microwave communication systems.

Stable picosecond dissipative soliton pulses were observed in an ytterbium-doped fiber laser employing a high-quality mixture of BP/SnSe₂-PVA saturable absorber (SA). The modulation depth, saturation intensity, and non-saturable loss of the mixture of BP/SnSe₂-PVA SA were measured with values of 5.98%, 18.37 MW/cm², and 33%, respectively. Within the pump power range of 150-270 mW, stable dissipative soliton pulses were obtained with an output power of 1.68-4 mW. When the minimum pulse duration is 1.28 ps, a repetition rate of 0.903 MHz, center wavelength of 1064.38 nm and 3 dB bandwidth of 2 nm were obtained. The maximum pulse energy of 4.43 nJ and the signal-to-noise ratio up to 72 dB were achieved at pump power of 270 mW. The results suggest that the BP/SnSe₂-PVA mixture SA has outstanding nonlinear saturable absorption characteristics and broad ultrafast laser applications.

Second-order (χ⁽²⁾) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ⁽²⁾ response due to their centrosymmetric structures. A variety of novel material platforms possessing χ⁽²⁾ nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ⁽²⁾ nonlinear effects are introduced. Afterward, we highlight the commonly used χ⁽²⁾ nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ⁽²⁾ nonlinearity in the field of integrated microcavity photonics.

Optical fiber communication networks play an important role in the global telecommunication network. However, nonlinear effects in the optical fiber and transceiver noise greatly limit the performance of fiber communication systems. In this paper, the product of mutual information (MI) and communication bandwidth is used as the metric of the achievable information rate (AIR). The MI loss caused by the transceiver is also considered in this work, and the bit-wise MI, generalized mutual information (GMI), is used to calculate the AIR. This loss is more significant in the use of higher-order modulation formats. The AIR analysis is carried out in the QPSK, 16QAM, 64QAM and 256QAM modulation formats for the communication systems with different communication bandwidths and transmission distances based on the enhanced Gaussian noise (EGN) model. The paper provides suggestions for the selection of the optimal modulation format in different transmission scenarios.

We report self-organized periodic nanostructures on amorphous silicon thin films by femtosecond laser-induced oxidation. The dependence of structural periodicity on the thickness of silicon films and the substrate materials is investigated. The results reveal that when silicon film is 200 nm, the period of self-organized nanostructures is close to the laser wavelength and is insensitive to the substrates. In contrast, when the silicon film is 50 nm, the period of nanostructures is much shorter than the laser wavelength, and is dependent on the substrates. Furthermore, we demonstrate that, for the thick silicon films, quasi-cylindrical waves dominate the formation of periodic nanostructures, while for the thin silicon films, the formation originates from slab waveguide modes. Finite-difference time-domain method-based numerical simulations support the experimental discoveries.

Infrared photovoltaic cells (IRPCs) have attracted considerable attention for potential applications in wireless optical power transfer (WOPT) systems. As an efficient fiber-integrated WOPT system typically uses a 1550 nm laser beam, it is essential to tune the peak conversion efficiency of IRPCs to this wavelength. However, IRPCs based on lead sulfide (PbS) colloidal quantum dots (CQDs) with an excitonic peak of 1550 nm exhibit low short circuit current (J_sc) due to insufficient absorption under monochromatic light illumination. Here, we propose comprehensive optical engineering to optimize the device structure of IRPCs based on PbS CQDs, for 1550 nm WOPT systems. The absorption by the device is enhanced by improving the transmittance of tin-doped indium oxide (ITO) in the infrared region and by utilizing the optical resonance effect in the device. Therefore, the optimized device exhibited a high short circuit current density of 37.65 mA/cm² under 1 sun (AM 1.5G) solar illumination and 11.91 mA/cm² under 1550 nm illumination 17.3 mW/cm². Furthermore, the champion device achieved a record high power conversion efficiency (PCE) of 7.17% under 1 sun illumination and 10.29% under 1550 nm illumination. The PbS CQDs IRPCs under 1550 nm illumination can even light up a liquid crystal display (LCD), demonstrating application prospects in the future.

The mechanisms of interaction between pulsed laser and materials are complex and indistinct, severely influencing the stability and quality of laser processing. This paper proposes an intelligent method based on the acoustic emission (AE) technique to monitor laser processing and explore the interaction mechanisms. The validation experiment is designed to perform nanosecond laser dotting on float glass. Processing parameters are set differently to generate various outcomes: ablated pits and irregular-shaped cracks. In the signal processing stage, we divide the AE signals into two bands, main and tail bands, according to the laser processing duration, to study the laser ablation and crack behavior, respectively. Characteristic parameters extracted by a method that combines framework and frame energy calculation of AE signals can effectively reveal the mechanisms of pulsed laser processing. The main band features evaluate the degree of laser ablation from the time and intensity scales, and the tail band characteristics demonstrate that the cracks occur after laser dotting. In addition, from the analysis of the parameters of the tail band very large cracks can be efficiently distinguished. The intelligent AE monitoring method was successfully applied in exploring the interaction mechanism of nanosecond laser dotting float glass and can be used in other pulsed laser processing fields.