Frontiers of Optoelectronics最新文献

976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (⁴F_9/2 → ⁴F_7/2) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.

Thin film p-side up vertical-cavity surface-emitting lasers (VCSELs) with 940 nm wavelength on a composite metal (Copper/Invar/Copper; CIC) substrate has been demonstrated by twice-bonding transfer and substrate removing techniques. The CIC substrate is a sandwich structure with a 10 µm thick Copper (Cu) layer/30 µm thick Invar layer/10 µm thick Cu layer. The Invar layer was composed of Iron (Fe) and Nickel (Ni) with a proportion of 70:30. The thermal expansion coefficient of the composite CIC metal can match that of the GaAs substrate. It results that the VCSEL layers can be successfully transferred to CIC metal substrate without cracking. At 1 mA current, the top-emitting VCSEL/GaAs and thin-film VCSEL/CIC had a voltage of 1.39 and 1.37 V, respectively. The optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW, respectively. The 50 µm thick CIC substrate can play a good heat dissipation function, which results in improving the electrical and optical characteristics of thin film VCSELs/CIC. The VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/GaAs. The obtained data suggested that VCSELs on a composite metal substrate not only affected significantly the characteristics of thin film VCSEL, but also improved considerably the device thermal performance.

In this work, a high-energy and high peak power chirped pulse amplification system with near diffraction-limited beam quality based on tapered confined-doped fiber (TCF) is experimentally demonstrated. The TCF has a core numerical aperture of 0.07 with core/cladding diameter of 35/250 µm at the thin end and 56/400 μm at the thick end. With a backward-pumping configuration, a maximum single pulse energy of 177.9 μJ at a repetition rate of 504 kHz is realized, corresponding to an average power of 89.7 W. Through partially compensating for the accumulated nonlinear phase during the amplification process via adjusting the high order dispersion of the stretching chirped fiber Bragg grating, the duration of the amplified pulse is compressed to 401 fs with a pulse energy of 126.3 μJ and a peak power of 207 MW, which to the best of our knowledge represents the highest peak power ever reported from a monolithic ultrafast fiber laser. At the highest energy, the polarization extinction ratio and the M² factor were respectively measured to be ~ 19 dB and 1.20. In addition, the corresponding intensity noise properties as well as the short- and long-term stability were also examined, verifying a stable operation of the system. It is believed that the demonstrated laser source could find important applications in, for example, advanced manufacturing and photomedicine.

Optical thermometry based on the upconversion (UC) luminescence intensity ratio (LIR) has attracted considerable attention because of its feasibility for achievement of accurate non-contact temperature measurement. Compared with traditional UC phosphors, optical thermometry based on UC single crystals can achieve faster response and higher sensitivity due to the stability and high thermal conductivity of the single crystals. In this study, a high-quality 5 at% Yb³⁺ and 1 at% Ho³⁺ co-doped Gd_0.74Y_0.2TaO₄ single crystal was grown by the Czochralski (Cz) method, and the structure of the as-grown crystal was characterized. Importantly, the UC luminescent properties and optical thermometry behaviors of this crystal were revealed. Under 980 nm wavelength excitation, green and red UC luminescence lines at 550 and 650 nm and corresponding to the ⁵F₄/⁵S₂ → ⁵I₈ and ⁵F₅ → ⁵I₈ transitions of Ho³⁺, respectively, were observed. The green and red UC emissions involved a two-photon mechanism, as evidenced by the analysis of power-dependent UC emission spectra. The temperature-dependent UC emission spectra were measured in the temperature range of 330-660 K to assess the optical temperature sensing behavior. At 660 K, the maximum relative sensing sensitivity (S_r) was determined to be 0.0037 K^-1. These results highlight the significant potential of Yb,Ho:GYTO single crystal for optical temperature sensors.

Optical microcavities have the ability to confine photons in small mode volumes for long periods of time, greatly enhancing light-matter interactions, and have become one of the research hotspots in international academia. In recent years, sensing applications in complex environments have inspired the development of multimode optical microcavity sensors. These multimode sensors can be used not only for multi-parameter detection but also to improve measurement precision. In this review, we introduce multimode sensing methods based on optical microcavities and present an overview of the multimode single/multi-parameter optical microcavities sensors. Expected further research activities are also put forward.

Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.

Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid-base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm² of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.

The widely tunable and high resolution mid-infrared laser based on a BaGa₄Se₇ (BGSe) optical parametric oscillator (OPO) was demonstrated. A wavelength tuning range of 2.76-4.64 μm and a wavelength tuning resolution of about 0.3 nm were obtained by a BGSe (56.3°, 0°) OPO, which was pumped by a 1064 nm laser. It is the narrowest reported wavelength tuning resolution for BGSe OPO, and was obtained by simultaneously controlling the angle and temperature of BGSe.

In lead halide perovskites, organic A-site cations are generally introduced to fine-tune the properties. One of the questions under debate is whether organic A-site cations are essential for high-performance solar cells. In this study, we compare the band edge carrier dynamics and diffusion process in MAPbBr₃ and CsPbBr₃ single-crystal microplates. By transient absorption microscopy, the band-edge carrier diffusion constants are unraveled. With the replacement of inorganic A-site cations, the diffusion constant in CsPbBr₃ increases almost 8 times compared to that in MAPbBr₃. This work reveals that introducing inorganic A-site cations can lead to a much larger diffusion length and improve the performance of band-edge carriers.

Ultrafast physical random bit (PRB) generators and integrated schemes have proven to be valuable in a broad range of scientific and technological applications. In this study, we experimentally demonstrated a PRB scheme with a chaotic microcomb using a chip-scale integrated resonator. A microcomb contained hundreds of chaotic channels, and each comb tooth functioned as an entropy source for the PRB. First, a 12 Gbits/s PRB signal was obtained for each tooth channel with proper post-processing and passed the NIST Special Publication 800-22 statistical tests. The chaotic microcomb covered a wavelength range from 1430 to 1675 nm with a free spectral range (FSR) of 100 GHz. Consequently, the combined random bit sequence could achieve an ultra-high rate of about 4 Tbits/s (12 Gbits/s × 294 = 3.528 Tbits/s), with 294 teeth in the experimental microcomb. Additionally, denser microcombs were experimentally realized using an integrated resonator with 33.6 GHz FSR. A total of 805 chaotic comb teeth were observed and covered the wavelength range from 1430 to 1670 nm. In each tooth channel, 12 Gbits/s random sequences was generated, which passed the NIST test. Consequently, the total rate of the PRB was approximately 10 Tbits/s (12 Gbits/s × 805 = 9.66 Tbits/s). These results could offer potential chip solutions of Pbits/s PRB with the features of low cost and a high degree of parallelism.